CN1036681A - The production method of plasma and device - Google Patents
The production method of plasma and device Download PDFInfo
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- CN1036681A CN1036681A CN89101741A CN89101741A CN1036681A CN 1036681 A CN1036681 A CN 1036681A CN 89101741 A CN89101741 A CN 89101741A CN 89101741 A CN89101741 A CN 89101741A CN 1036681 A CN1036681 A CN 1036681A
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Abstract
This paper has described a kind of method of generating plasma and device.Between pair of electrodes, settled some substrates, electrode is supplied to high frequency electric source, so that produce glow discharge, and causes producing plasma.Substrate in plasma is AC field in addition.Be subjected to the sputter effect by means of this AC field, substrate.
Description
The present invention relates to the production method and the device of plasma.
Recently, formation has the very production method of the carbon film of high rigidity, has developed into the use chemical gas phase reaction.Japanese patent application, application number are that 56146936(1981 applied for September 17), provided such example.The carbon film of this pattern provides a smooth erosion-resisting surface owing to its high rigidity, and of great use.
Yet use one type of prior art syringe and method, can make a sheet of area or some substrates fail to handle simultaneously.Especially coating or handle this when surface on the surface of injustice is at hollow surperficial position, can only produce deposit seldom.
The object of the present invention is to provide a kind of production method and device of plasma,, carry out the processing of plasma so that in large-area processing.
Another object of the present invention provides a kind of production method and device of plasma, to increase the productivity ratio of electric device.
In order to realize above purpose and advantage with other, between pair of electrodes, produced the plasma of reacting gas, high frequency electric source to this to electrode power supply.Some substrates are placed in this plasma space, and by ac power supply.When between pair of electrodes, imposing high-frequency electrical, produce glow discharge.The usefulness that offers the alternating current of substrate is to produce the sputter effect.When deposit, the function of sputter be able to a kind of non-crystal amorphous thin film ， And of deposit and when etching, will improve etching speed.With the corresponding deposited carbon films of the present invention, be for example to be a kind of so-called diamond-like carbon film, its Vickers hardness can look to reaching 6500 kilograms/millimeter
2(Kg/mm
2), or depend on formation condition, can reach higher.Energy gap is not less than 10 electron-volts, preferably at 1.5 to 5.5 electron-volts.On the pyromagnetic head that is often bearing rubbing action, when using this carbon film, the smooth crust of this carbon film has very big advantage.On the other hand, in semiconductor integrated circuit, when using this carbon film, the coefficient of heat conduction that it is high makes the heat that is created in the integrated circuit, might make circuit can bear high temperature by Xiao San And.Adjust deposition conditions, also can make the carbon film that manufacturing contains diamond particle become possibility.
Phosphorus or diborane are joined in the carbon that contains reacting gas, so that the carbon film of deposit has semiconductor property.After finishing spraying plating, produce the method for plasma according to the present invention, the etching action of the plasma by argon can chamber cleaning.
Fig. 1 is according to plasma chemistry gas-phase reaction schematic representation of apparatus of the present invention.
Fig. 2 (A), 2(B) and 2(C) be follow-on schematic diagram of the base sheet rack in the device shown in Figure 1.
Fig. 3 (A) is to 3(C) be sectional drawing according to carbon film production method of the present invention.
Fig. 4 is according to the another kind of embodiment schematic diagram that produces plasma device of the present invention.
Fig. 5 (A) and 5(B) is follow-on plane graph of the base sheet rack that installs shown in Fig. 4.
Fig. 6 (A) is to 6(D) sectional drawing of expression carbon film deposit on the organic photoconductive film of printing drums.
Fig. 7 is follow-on schematic diagram of device shown in Figure 4.
Referring now to plasma chemical vapor deposition device shown in Figure 1.And explains the deposit of carbon film according to the present invention.This device comprise a loading and relief chamber 7 '; A reative cell 7, this chamber is through valve 9 and loading chamber 7 ' be connected; Be used to the to find time pumped vacuum systems of reative cell, it is by pressure-control valve 21, turbomolecular pump 22 and rotary pump 23 are formed; An air supply system 10 that in reative cell 7, adds working gas, gas adds with nozzle 25; Function be equivalent to the base sheet rack 1 of an electrode '; A pair of mesh electrodes 3 and 3 '; High frequency power supply source 40 with base sheet rack 1 and mesh electrodes 3 and 3 ' be connected, this power supply source 40 is by high frequency electric source 15, a matching transformer 16, an AC power 17 is formed and 29 1 attemperating units of a biasing device, be installed in the chamber 7 to keep the temperature of reacting gas, for example remain on (though not expressing this device among the figure) between 450 ℃ and-100 ℃.The output frequency of high frequency electric source 15 is 1 to 50 megahertz, for example 13.56 megahertzs.A pair of mesh electrodes 3 and 3 ' respectively be connected on two terminations 4 and 4 of the secondary coil of transformer 16 '.The cylindrical outer cover 2 of base sheet rack is through AC power 17, and the Zhong Xin And that is connected in secondary coil links to each other with the device 29 of supplying with bias voltage.The frequency of AC power is 1 to 500 kilo hertz of sesame, for example 50 kilo hertzs of sesames.Electrode 3 and 3 ' between the space of plasma generation, limited by a cylindrical outer cover 2, the opening below the last area of this shell by a pair of lid 8 and 8 ' seal.The base sheet rack shell is one 20 centimetres to 1 meter high, 30 centimetres to the 3 meters wide cylinders that four limits are arranged.Can consider like this that also a microwave excitation device 26 will be linked on the air supply system 10.For example, the microwave of device 25 usefulness, 2.45 gigahertzs and 200 watts to 2 kilowatts removes the reacting gas from air supply system 10.By means of this device 25, deposition speed and etching speed increase about about 5 times and 4 times respectively.
The method of deposited carbon films is described below: the substrate of coating be placed on load chamber 7 ' in.Chamber 7 ' and reative cell 7 will vacuumize the back, substrate 1 is delivered to reative cell 7 through valve 9 loading.In the drawings, substrate 1 is the garden dish type.At the back side of this dish in the mode of vacuum evaporation coated with the aluminium film.Base sheet rack is suitable for supporting this garden Pan, And to be electrically connected by the aluminium film.
Reacting gas enters reative cell 7 through air supply system 10.Reacting gas contains carbide gas, as CH
4, C
2H
4, C
2H
2, CH
3OH or C
2H
5OH.H for example
2And CH
4Pass through pipeline 11 and 12 respectively,, send into identical ratio.Ratio with hydrogen content in the carbon film of adjusting the ratio may command deposit of hydrogen in the reacting gas.Best, the content of hydrogen is not higher than 25% gram-molecular weight in the film.Among reacting gas, can add impurity gas.Impurity can be that N(is not higher than 5 atom %), boron or phosphorus (0.1-5 atom %), halogen (not being higher than 25 atom %) additive adds respectively in the following form: NH
3, B
2H
6, PH
3And C
2F
6Or C
3F
8
By 0.5 to 5 kilowatt high frequency electric source 15, the high-frequency electrical of 13.56 megahertzs of sending is powered to reacting gas.Power output is equivalent to 0.03 to 3 watt/centimetre of plasma energy
2For example power output is 1 kilowatt (0.6 watt/centimetre
2) on the other hand, the AC power of 50 kilo hertzs of sesames (voltage) is to base sheet rack (substrate 1) power supply, power supply is carried out with AC power 17.Supply with power supply on the substrate 1 with biasing device 29 with-200 volts to+600 volts biasings.Actual bias potential on substrate 1 is-400 volts to+400 volts, because automatic bias spontaneously is applied to it, adds it also is like this even without the bias voltage of outside.More advantageously, the effect of bias voltage makes substrate be equivalent to negative electrode.Such result is, plasma gas produces ， And and carbon deposition on substrate in reative cell 7.The speed of deposit reaches 100 to 1000 dusts/minute can And and when being superimposed on 100 to 300 volts bias voltage on the power supply when being deposited on little ripple useless in the plasma of high concentration, deposition speed be 100 to 200 dusts/minute.When microwave energy and the bias voltage 100 to 300 volts of stacks on the power supply are used in deposit, deposition speed be 500 to 1000 dusts/minute.Reaction gas pressure remains on 1 to 0.01 millimetres of mercury, for example remains on 0.1 millimetres of mercury in reative cell 4.Under the situation that does not have special heating, the temperature of substrate is 50 ℃ to 150 ℃.So on substrate 1 deposit the noncrystal amorphous carbon film of one deck 50 dust to 10 micron thickness.Carbon film is made of amorphous carbon, these amorphous carbon films, and according to deposition conditions, its crystallite diameter is 5 dusts to 2 micron.The Vickers hardness of carbon film is not less than 2000 kilograms/millimeter
2, the thermal conducting coefficient is not less than 2.5 watts of/centimetre degree, preferably at 4.0 to 6.0 watts of/centimetre degree.Carbon film is with SP
3The C-C key be feature.Waste gas is removed through pumped vacuum systems 21 to 23.
When supply frequency at 1 gigahertz or when higher, for example at 2.45 gigahertzs, just can destroy c h bond, C-C simultaneously, C=C can the frequency of 0.1 to 50 megahertz under, for example, can destroy when frequency during at 13.56 megahertzs.The content of hydrogen preferably is not higher than 25% gram molecule in carbon film.Also can often add as phosphorus, nitride or boron as impurity, so that produce the n-type or the p-N-type semiconductor N of carbon.
Base sheet rack can be revised according to the requirement of using.Fig. 2 (A) and 2(B) be the schematic diagram of embodiment.In Fig. 2 (A), some plate shaped base sheet racks 1 ' be overall shaped in the shell 2, each support 1 ' relative both sides settle pair of substrate 1.Distance between each adjacent stent is chosen to be 6 to 10 centimetres.The size of support is 30 centimetres of 60 cm x.Substrate is loaded on the support, and the lateral edge place reserves 10 centimetres, and last lower limb is reserved 5 centimetres respectively.Like this, the thickness of carbon film is 1 micron ± 5%.In order to hang clamping frame 1-1, braided mesh 2 ' as shown in Figure 2 can be set in shell 2.Container 1-2 can be arranged at mesh 2 and " locate.
Although the coating of substrate back is preferably made conductivity, the covering of conductive layer also can be saved.In conjunction with Fig. 2 an embodiment is described.This embodiment provides a kind of device of handling some beverage glass cups.In shell 2, supporting element 2 '-1 to 2 '-" be to make by the electric conducting material of aluminium.These supporting elements are equiped with the cup receiver, are to be made on cup-shape and the attached inner surface that leans against the cup of being supported by stainless steel.According to experience, when the gap between glass inner surface and the receiver during less than 2 millimeters, the deposit of carbon film is with identical in the situation of the direct aluminium coating film of glass inner surface.Yet when the distance between cup and the receiver reached about 10 millimeters, the effect of conductor receiver just can not have been affirmed.Perhaps, aluminium foil can sandwich between receiver and the glass or replace receiver.
The present invention can be used for etch process.Form after the carbon film on substrate, then introduce etching gas in reative cell 7, carbon film surface coverage Zhe Zhao And is placed on indoor.But etching gas O
2, air, NO
2, NO, N
2The mist of O oxygen and hydrogen or other suitable oxide.The generation of plasma gas, identical with mode in the process of the deposit of carbon film, to realize the etching of carbon film.When etching, the temperature of substrate preferably remains on 100 to-100 ℃, and reaction gas pressure is 0.01 to 1 millimetres of mercury, will set forth an experiment below.
In conjunction with Fig. 3 (A) to 3(C) set forth, produce the technological process of the semiconductor device of carbon film pattern.This device is shaped on a silicon semiconductor substrate 31.Substrate, dihydro silicon thin film 37 and superconducting ceramic film 32 are formed separately and with regard to sample, cover the block film 33 with 0.5 micron then, and this film stops and is positioned at following film 32 and is exposed under the etching action.Block film 33 is by SiO
2Make.Carbon film 34 is deposited on the substrate as the thickness with 0.5 micron with 0.1 to 2 micron thickness like this.Photoresist mould moulding on carbon film 34 with opening 36.Opening 36 is to be used for the connecting portion that contacts with integrated circuit chip.The thickness of photoresist mould is chosen as with laminar surface under not exposing and is advisable, even also should not expose when follow-up etching causes its attenuate.
Subsequently, oxygen is added into reative cell, and the input of 300 watts high frequency electric source is to carry out the etching to carbon film 34.After etching was finished, the part of photoresist 35 and block film was at opening NF
3Or SF
6Etching is removed.
Moreover, conductive film 32 also can be by Al(aluminium), Ag(silver) or Sn(tin) form.Block film 33 can be made with phosphorosilicate glass.The thickness of block film generally can be 0.1 to 2 micron.Replace thick photoresist mould, can be with the coating silica film silicon dioxide mould that is shaped.And and similarly carry out etching with the photoresist mould.Silica membrane is not subjected to the etching action of oxygen.
Superconductivity ceramics used in the present invention can be by the Chemical Calculation formula
(AixBx)
yCU
zO
wPrepare, herein, A is the element in the II a family in one or more periodic tables, and rare earth element for example, B are element, for example alkaline earth element ， And and x=0.1-1 in the II a family in one or more periodic tables; Y=2.0-4.0, preferably 2.5-3.5; Z=1.0-4.0 is 1.5-3.5 preferably; W=4.0-10.0 is 6.0-8.0 preferably.And the used superconductivity ceramics of the present invention can be by Chemical Calculation formula (A
1-
xB
x)
yCu
zO
wPreparation, A is the element in the V b family for example Bi, Sb and As in one or more periodic tables herein; B is the element in the II a family in one or more periodic tables, for example alkaline earth element, x=0.3-1 simultaneously; Y=2.0-4.0; Be preferably 2.5-3.5; Z=1.0-4.0 is preferably 1.5-3.5; W=4.0-10.0 is preferably 6.0-8.0.The general type of back example is Bi
4SryCa
3Cu
4O
x, Bi
4SryCa
3Cu
4O
x, Bi
4Sr
yCa
3Cu
4O
x, Bi
4Sr
yCa
3Cu
4O
x, Bi
4Sr
yCa
3Cu
4O
x, Bi
4Sr
yCa
3Cu
4O
x(y is about 1.5).
Referring now to Fig. 4, another embodiment is described.Give identical label performance with the described similar elements of Fig. 1, And will repeat no more.
Power supply 41 has been represented the feature of present embodiment especially.Power supply 41 has comprised a pair of high frequency electric source 45-1 and 45-2, and they are by the connection with a phase shifter 46.Phase difference between the output of power supply 45-1 and 45-2 is controlled with phase shifter 46.The output of power supply 45-1 and 45-2 is connected with 46-2 with a pair of matching transformer 46-1, and sequentially is series at the terminal of transformer secondary output coil respectively.The other terminal of transformer 46-1 and 46-2, with the mode identical with first embodiment be connected in a pair of mesh electrodes 3 and 3 ' between.
Act on electrode 3 and 3 ' the relevant phase place of power supply controlled by phase shifter 46.That is to say pair of electrodes 3 and 3 ' on current potential be to keep homophase or anti-phase exactly.Differ and to be adjusted into except that any what the suitable angle 0 ° or the 180 ° of angles according to electrode condition around.
Then, use a kind of deposition process of this equipment to be described below.Some printing drums 1 that are used for Xerox are loaded on base sheet rack, and these supports are integrally formed in the shell 42.The surface of printing drums is given and is applied earlier a kind of organic photoconductive film, and drum is loaded in the rectangular enclosure shown in Fig. 5 (A), and this shell is that 75 centimetres wide * 75 centimeter length * 50 are centimetre high.16 drums have been adorned in expression among the figure, and simultaneously illusory bulging 1-0 installs in order that make the electric field of being inducted in producing plasma space 60 even along the inner surface of shell.Fig. 5 (B) expression drum is loaded in the hexagonal shell.
NF
3And C
2H
2As reacting gas, join in the reative cell NF
3/ C
2H
2Ratio be 1/4 to 4/1.For example 1/1.Because from the high-frequency electrical energy of power supply 45, inducted ， And and carbon film of plasma is deposited on the drum.Formed carbon film simultaneously in the sputter effect, the sputter effect mainly is because the electric energy of power supply 47 is caused.So just become the carbon film of diamond like carbon, and contain nitrogen, contain fluorine 0.3-3 atom % at 0.3-10 atom %.The transparency of diamond-like-carbon and resistivity, can with change wherein nitrogen and the content of fluorine recently control.From the use viewpoint of printing drums, suitable resistivity 1 * 10
7To 1 * 10
14Ohmcm preferably selects 1 * 10 for use
9To 1 * 10
11Ohmcm.
The sectional drawing of Fig. 6 (A) expression printing drums.The Cylinder 51 of an aluminium is drawn together in this bulge, and an end of this Cylinder is closed, and is provided with the rotation support projection of the drum that is used for photocopier.The inner surface of the other end of drum engraves screw thread at 53 places.A photosensitive antithesis film 57 is made and carrier transmits film and is capped on the Cylinder 51 of aluminium by a kind of organic light directing film.Carbon film 54 covers on antithesis film 57.The thickness of carbon film is 0.1 to 3.0 micron.Fig. 6 (B) is the partial graph of the amplification of Fig. 6 (A).Because abrasion may take place through being usually used in the place of rubbing action in the end 11 of carbon film in drum.In order to strengthen the end, can be shown in Fig. 6 (C) enlarged end.The end 55 that is thickened can reach between 0.08 to 0.1 millimetres of mercury with this end being positioned near nearly mesh electrodes 3 and 3 ' shaping ， And adjustment plasma pressure.Shape among Fig. 6 (B) realizes when plasma pressure is 0.05 millimetres of mercury.The end of carbon film also can image pattern 6(D in addition) shown in the some of pruning, this can reach in 0.01 to 0.04 millimetres of mercury scope with adjusting plasma pressure, perhaps realizes with suitable lid covers end.
After finishing deposit, from the chamber, take drum away, and the chamber interior deposit some unwanted carbon, these carbon can be with adding the oxygen etchant and removing with the plasma etching effect.Then, H
2Plasma etching can be removed and be attached to reative cell interior oxidation thing and be infected with.Other deposit and etching condition are identical with the plasma production process of first embodiment.
Drawn a kind of modified model of device shown in Figure 4 at Fig. 7.Fig. 7 and Fig. 4 use identical label to same element.56-1 and 56-2 are the LCR matching boxes, with this matching box can with electrode 3 and 3 ' between impedance matching ， And high frequency electric source 45-1 and 45-2 can be adjusted.Power supply is equiped with ground wire 55-1 and 55-2.The frequency of another power supply of a frequency in the power supply etc. sons or be its multiple.The intermediate voltage source is connected in base sheet rack 2 ， And and comprises an alternating-current voltage source 57-1, a direct voltage source 57-2, a three-way switch 51.The effect of direct voltage source 57-2 is to make Dc bias of stack, on the AC power of being come by AC power 57-1.The frequency of alternating-current voltage source is 10 He Zhi to 100 kilo hertz sesames.Can select the bias voltage of three kinds of states with switch 51.Substrate 1 is subjected to electric suspension at the 51-1 place, uses the alternating voltage of supplying with from AC power 57-1, and in addition the bias voltage ， And of the direct voltage of 57-2 place supply is grounded on 51-3.In the case, intake is 0.5 to 50 kilowatt (.005 to 5 watt/centimetre
2) for example 1 kilowatt (1 watt/centimetre
2).
Adjust electrode 3 and 3 ' between voltage phase difference, make the plasma (orifice) gas physical efficiency in whole deposit spatial diffusion.If this deposit coefficient and electrode 3 and 3 ' strictness symmetry, then differing is 0 ° or 180 °, and when asymmetric, optimum value is then opened 0 ° or 180 ° partially.According to experiment, optimum value is in the scope of 0 ° ± 30 ° or 180 ° ± 30 °.When differing near 90 ° or 270 ° (± 30 °) time, plasma gas mainly is collected near the electrode.
Carbon film is deposited on according to modified model and is coated with on the drum of one deck organic photoconductive film.Reacting gas is by C
2F
6/ C
2H
4(=1/4 to 4/1) is formed, and is added indoorly downwards by nozzle 65, and drum does not need special heating, and remains in the temperature range of room temperature to 150 ℃.Use the AC bias supplied with by the intermediate voltage source, set up one-50 to-600 volts back bias voltage.Other deposition conditions is identical with first embodiment.On drum, be shaped like this, the fluorine-containing diamond-like carbon film of 0.1 to 8 micron thickness, its deposition speed be 1000 dusts/minute.
Forming in two steps, at first, is 0.01 to 0.1 micron with ethene and hydrogen deposit carbon film, and to the organic surface of drum, this carbon film has very high tack.The resistivity of this film is 1 * 10
6To 5 * 10
13Ohmcm.Secondly use and contain C
2F
6And NH
3Reacting gas can be on lower floor's carbon film the carbon film of deposit 0.2 to 2 micron thickness, the resistivity of this film is 1 * 10
7To 5 * 10
12Ohmcm.
The deposit of silicon nitride film and fluorocarbon-containing film is described with reference to Fig. 8 (A).Glass substrate 11 and 11 ' be supported on the base sheet rack 2.These substrates for example are the glass of preceding, side and rear window, and the side mirror of automobile, motorcycle, aircraft, the perhaps window of building.In this embodiment, silicon nitride film gave forming in earlier on the substrate before carbon coating 65-2, because glass is easy to the fluorine reaction.The resistivity of carbon film is adjusted into 1 * 10
6To 5 * 10
13Ohmcm, adjustment are the addings of taking to control fluorine, with the laying dust that stops static to cause.Fig. 8 (B) is illustrated in a deposit on the curved surface.
Because set forth some specific embodiments, can think that the present invention is not limited in certain specific embodiment of describing, and remodeling and change can not depart from the restricted portion by dependent claims of the present invention institute.Be exemplified below.
Because the carbon film coefficient of heat conduction of the present invention is very high.The thermal diffusion of integrated circuit chip can be used in its back side covering carbon film and quicken.
Substrate of the present invention applies can use any material, plastics for example, pentaerythrite (PET), polyester (PES), polymethyl methacrylate, polytetrafluoroethylene, epoxy resin, polyimides and other organic resin.The shape of substrate can comprise several patterns, for example has irregular surface.
Be deposited on on-chip material according to the present invention, except carbon, also include silicon dioxide, silicon nitride or other material.A kind of outstanding loud speaker can be realized with its inside and outside surface, covering very hard carbon film of the present invention that vibrates cone.Two side surfaces can be coated in reative cell immediately.
Claims (15)
1, a kind of method that produces plasma includes:
(1) in reaction compartment, a substrate is installed at least,
(2) in said reaction compartment, supply response gas,
(3) apply high-frequency electrical energy to said reacting gas,, produce plasma to be directed in said reative cell,
(4) on said substrate surface, carry out the plasma state reaction,
It is characterized in that: a frequency is lower than the AC power of described high frequency electric source frequency, during the plasma state reaction, is applied on the described substrate, in order that quicken in said on-chip sputter effect.
2, in accordance with the method for claim 1, it is characterized in that said high frequency electric source frequency is chosen in 1 to the 5 megahertz scope.
3, in accordance with the method for claim 2, it is characterized in that the frequency of said AC power is chosen in 1 to 500 kilo hertz of sesame scope.
4, in accordance with the method for claim 1, it is characterized in that said reaction compartment, be limited between the pair of electrodes that said high frequency electric source puts on this on the electrode.
5, in accordance with the method for claim 4, it is characterized in that said electrode is a mesh electrodes.
6, in accordance with the method for claim 5, it is characterized in that described high frequency electric source, supplied with by two terminations of the secondary coil of transformer.
7, in accordance with the method for claim 6, it is characterized in that said AC power is added with back bias voltage in a side of substrate.
8, in accordance with the method for claim 6, it is characterized in that described alternating current is to be connected in the mid point of described secondary coil and the AC power between the described substrate is supplied with by one.
9, in accordance with the method for claim 8, it is characterized in that described plasma state reaction is to be deposited on the described substrate.
10, in accordance with the method for claim 8, it is characterized in that described plasma state reaction, is the carbon film deposit.
11, in accordance with the method for claim 4, it is characterized in that the input high frequency electric source is to differing, come down to 180 ° or 0 ° between two terminations of secondary coil.
12, a kind of device that produces plasma is characterized in that, includes
(1) reative cell,
(2) air supply systems that are used for reacting gas is imported said reative cell,
(3) said reative cells and remain on the vacuum pump of air pressure suitable in the said reative cell of being used to find time,
(4) pair of electrodes defines the space of plasma generation betwixt,
(5) base sheet racks that are used in said plasma generating space, supporting at least one substrate,
(6) high frequency electric sources that are used for being provided with high-frequency electrical to pair of electrodes,
(7) one are used for can selecting frequency that said base sheet rack is supplied with AC power, the alternating voltage of alternating voltage, and the substrate that base sheet rack is supported in the space of plasma generation, is subjected to isoionic sputter effect in fact.
13, according to the described device of claim 12, it is characterized in that the space of described plasma generation is limited by a shell, described base sheet rack is integrally to be formed within the shell.
14, according to the described device of claim 12, it is characterized in that said high frequency electric source is equiped with phase shifter, can adjust the input electric energy to differing between the said electrode with it.
According to the described device of claim 12, it is characterized in that 15, described base sheet rack is provided with a conductive surface, so that be fit to and said support, the substrate contact of support.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25920/88 | 1988-02-05 | ||
| JP25919/88 | 1988-02-05 | ||
| JP2591988A JPH0627341B2 (en) | 1988-02-05 | 1988-02-05 | Thin film formation method |
| JP117792/88 | 1988-05-13 | ||
| JP212890/88 | 1988-08-26 | ||
| JP255489/88 | 1988-10-11 | ||
| JP63255489A JPH02101744A (en) | 1988-10-11 | 1988-10-11 | Plasma reaction process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1036681A true CN1036681A (en) | 1989-10-25 |
| CN1021100C CN1021100C (en) | 1993-06-02 |
Family
ID=26363620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89101741 Expired - Fee Related CN1021100C (en) | 1988-02-05 | 1989-02-04 | Plasma processing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1021100C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409725C (en) * | 2005-06-27 | 2008-08-06 | 周伟 | Mould release membrance, and its preparing process and equipment |
| WO2021109814A1 (en) * | 2019-12-04 | 2021-06-10 | 江苏菲沃泰纳米科技有限公司 | Coating device and electrode apparatus and application thereof |
| CN113727483A (en) * | 2021-09-02 | 2021-11-30 | 合肥爱普利等离子体有限责任公司 | Multi-electrode alternating current arc discharge device, equipment and alternating current power supply |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321548C (en) * | 2004-12-28 | 2007-06-13 | 西北师范大学 | Touch glow-discharge plasma generating apparatus |
-
1989
- 1989-02-04 CN CN 89101741 patent/CN1021100C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100409725C (en) * | 2005-06-27 | 2008-08-06 | 周伟 | Mould release membrance, and its preparing process and equipment |
| WO2021109814A1 (en) * | 2019-12-04 | 2021-06-10 | 江苏菲沃泰纳米科技有限公司 | Coating device and electrode apparatus and application thereof |
| CN113727483A (en) * | 2021-09-02 | 2021-11-30 | 合肥爱普利等离子体有限责任公司 | Multi-electrode alternating current arc discharge device, equipment and alternating current power supply |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1021100C (en) | 1993-06-02 |
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