CN103633189A - Membrane surface windowing process for solar cell - Google Patents
Membrane surface windowing process for solar cell Download PDFInfo
- Publication number
- CN103633189A CN103633189A CN201310602314.4A CN201310602314A CN103633189A CN 103633189 A CN103633189 A CN 103633189A CN 201310602314 A CN201310602314 A CN 201310602314A CN 103633189 A CN103633189 A CN 103633189A
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- China
- Prior art keywords
- solar cell
- cavity
- windowing process
- membrane surface
- windowing
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000012528 membrane Substances 0.000 title abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002002 slurry Substances 0.000 abstract description 8
- 238000002161 passivation Methods 0.000 abstract description 5
- 229910004205 SiNX Inorganic materials 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052593 corundum Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract 6
- 239000010409 thin film Substances 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a membrane surface windowing process for a solar cell, and belongs to the technical field of manufacturing of solar photovoltaic cells. The process is mainly characterized in that etchant gases are injected into a cavity with a silicon wafer to be windowed; the flow of the etchant gases is controlled to be 0-5L/m. According to the membrane surface windowing process for the solar cell, gases (gases which can etch a certain type of thin films, such as hydrofluoric acid gas or a mixture of the hydrofluoric acid gas and added additives) which can etch SiO2 (or all the thin films with the effects of passivation and decrease, such as SiNx/Al2O3/a-Si) are adopted to etch a membrane surface and achieve the goal of windowing, the gaseous corrosion rate is high, the production capacity is high, the process is relatively stable and suitable for volume production, and the defects that the initial input cost for a laser mode is high, and the cost for later operation of corrosion slurry is high are effectively overcome.
Description
Technical field
The present invention relates to a kind of solar cell face windowing process, belong to solar-energy photo-voltaic cell manufacturing technology field.
Background technology
Solar cell, after the operations such as making herbs into wool, diffusion and PECVD, has been made PN junction, can, at generation current under illumination, for the electric current producing is derived, need on battery surface, make positive and negative two electrodes.It is more than the production procedure of conventional batteries technique, along with industrialization production technology is increasingly mature, the high-efficiency battery technique in laboratory also progressively applies to industrialization and produces, current more popular high-efficiency battery technique has: selective emitter battery, back surface field passivation cell, interdigital back of the body contact battery (IBC battery) etc., and these battery process have to relate on the face that is coated with SiO2 all films that can play passivation and anti-reflection effect such as (or) SiNx/Al2O3/a-Si and carry out selectivity windowing process, everybody generally adopts laser to window according to certain figure or with special pattern half tone, adopts silk screen printing that slurry is imprinted on face and corrodes these faces and then reach the object of windowing with corrosive slurry with corrosive slurry at present, but laser equipment is expensive, once drop into very large, and although the initial input of corrosive slurry is not high, but slurry is more expensive, the operation in later stage has high input.
Summary of the invention
The object of this invention is to provide a kind of solar cell face windowing process, solve the defect that above-mentioned prior art exists, by the present invention, effectively overcome the first input cost height of laser equipment and the high shortcoming of corrosive slurry later stage operation cost.
The object of the invention is to be achieved through the following technical solutions, a kind of solar cell face windowing process, it is characterized in that, described technique is that etchant gas is injected and had in the cavity that is equipped with silicon chip to be windowed of air inlet pipeline and outlet pipe, and etchant gas flow control is at 0 ~ 5 L/m.
Described etchant gas is hydrofluoric acid gas or the mixture that is added with the hydrofluoric acid gas of additive.
In described cavity, be provided with windowed regions and vacuum area, insert vacuum line in vacuum area, vacuum line holds silicon chip, from air inlet pipeline, leads to into etchant gas.
The air inlet pipeline of described cavity and outlet pipe communication loop or be not communicated with outside cavity.
The present invention mainly adopts the gas (hydrofluoric acid gas or be added with all gas that can this film of corrosion of the mixture etc. of hydrofluoric acid gas of additive) that can corrode SiO2 all films that can play passivation and anti-reflection effect such as (or) SiNx/Al2O3/a-Si to corrode face to reach the object of windowing, gas flow is controlled at 0 ~ 5 L/m, efficient gas attack speed, not only production capacity is high, the relatively stable applicable volume production of technique, and has effectively overcome the first input cost height of laser and the high shortcoming of corrosive slurry later stage operation cost.
Accompanying drawing explanation
Fig. 1 is the equipment schematic diagram in the present invention;
Fig. 2 is the equipment cavity profile in Fig. 1;
In figure, 1 cavity, 2 air inlet pipelines, 3 gas flowing through channel, 4 outlet pipes, 5 vacuum lines, 6 positions of windowing, 7 silicon chips.
Embodiment
Further illustrate in conjunction with the accompanying drawings and embodiments the present invention, as shown in Figure 1, the silicon chip 7 that is coated with SiO2 all films that can play passivation and anti-reflection effect such as (or) SiNx/Al2O3/a-Si film for the present invention.Etchant gas passes into cavity 1 from air inlet pipeline 2, and from outlet pipe 4 out, air inlet pipeline 2 and outlet pipe 4 can not be communicated with according to technological requirement in communication loop use yet.As shown in Figure 1, cavity 1 inwardly opened window position 6 needs to be communicated with internal gas, and completely cut off in vacuum line 5 positions and cavity 1, thereby etchant gas directly contacts to reach by window position 6 and the face of plated film silicon chip 7 and reacts the object of removing face with face, and 4 of vacuum lines are by passing into negative pressure, silicon chip 7 to be held.Vacuum line 5 is windowed, and position 6 is necessary strictly to be sealed, and etchant gas can not be led in vacuum line 5.The size that window size size can be accomplished according to technological requirement is at 10 ~ 200um, vacuum line 5 mainly plays the object that holds silicon chip 7, according to the requirement of technique and cost, can all lay in the non-position of windowing vacuum hole (or passes into one deck vacuum or equally with the hole of windowing makes the vacuum line of 10 ~ 200um or push down from above silicon chip etc. along the hole wall of windowing, comprise and allly can realize the mode hold or push down silicon chip, with play isolated etchant gas enter do not need the region of windowing and hold silicon chip to prevent that displacement from appearring in silicon chip).The figure of windowing can be straight line according to technological requirement, can be also that connection of broken lines forms, and can be also to put one by one composition, no matter the size of which kind of graph line or point need be in the scope of 10 ~ 200um.
Claims (4)
1. a solar cell face windowing process, is characterized in that, described technique is that etchant gas is injected and is equipped with in the cavity of silicon chip to be windowed; Etchant gas flow control is at 0 ~ 5 L/m.
2. solar cell face windowing process according to claim 1, is characterized in that, described etchant gas is hydrofluoric acid gas or the mixture that is added with the hydrofluoric acid gas of additive.
3. solar cell face windowing process according to claim 1, it is characterized in that, described cavity has air inlet pipeline and outlet pipe, in cavity, be provided with windowed regions and vacuum area, in vacuum area, insert vacuum line, vacuum line holds silicon chip, from air inlet pipeline, leads to into reacting gas.
4. solar cell face windowing process according to claim 2, is characterized in that, the air inlet pipeline of described cavity and outlet pipe communication loop or be not communicated with outside cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310602314.4A CN103633189A (en) | 2013-11-25 | 2013-11-25 | Membrane surface windowing process for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310602314.4A CN103633189A (en) | 2013-11-25 | 2013-11-25 | Membrane surface windowing process for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103633189A true CN103633189A (en) | 2014-03-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310602314.4A Pending CN103633189A (en) | 2013-11-25 | 2013-11-25 | Membrane surface windowing process for solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN103633189A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950336A (en) * | 2019-04-18 | 2019-06-28 | 电子科技大学 | A kind of black silicon material and preparation method thereof |
-
2013
- 2013-11-25 CN CN201310602314.4A patent/CN103633189A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950336A (en) * | 2019-04-18 | 2019-06-28 | 电子科技大学 | A kind of black silicon material and preparation method thereof |
| CN109950336B (en) * | 2019-04-18 | 2021-02-19 | 电子科技大学 | Black silicon material and preparation method thereof |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |