CN103606597A - 局部掺杂背纯化晶体硅太阳能电池及其制作方法 - Google Patents
局部掺杂背纯化晶体硅太阳能电池及其制作方法 Download PDFInfo
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- CN103606597A CN103606597A CN201310611347.5A CN201310611347A CN103606597A CN 103606597 A CN103606597 A CN 103606597A CN 201310611347 A CN201310611347 A CN 201310611347A CN 103606597 A CN103606597 A CN 103606597A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
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CN201310611347.5A CN103606597B (zh) | 2013-11-26 | 2013-11-26 | 局部掺杂背钝化晶体硅太阳能电池及其制作方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009120A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | N型晶体硅刻槽埋栅电池的制备方法 |
CN104051570A (zh) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | 一种太阳能电池的制作方法 |
CN104091842A (zh) * | 2014-07-07 | 2014-10-08 | 常州天合光能有限公司 | 分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法 |
CN105633196A (zh) * | 2014-11-04 | 2016-06-01 | 中国东方电气集团有限公司 | 一种晶硅太阳能电池钝化工艺中的硅片表面处理方法 |
CN105633174A (zh) * | 2014-11-04 | 2016-06-01 | 中国东方电气集团有限公司 | 一种具有背面钝化结构的单晶硅太阳能电池及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101878519A (zh) * | 2007-11-16 | 2010-11-03 | 应用材料股份有限公司 | 形成硅太阳能电池的背面点接触结构的方法 |
CN101976701A (zh) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | 背钝化电池的制造方法 |
CN202259320U (zh) * | 2011-07-06 | 2012-05-30 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池 |
US20120171804A1 (en) * | 2004-11-30 | 2012-07-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
CN102800738A (zh) * | 2011-05-24 | 2012-11-28 | 中国科学院微电子研究所 | 一种叉指型背接触式太阳能电池及其制备方法 |
-
2013
- 2013-11-26 CN CN201310611347.5A patent/CN103606597B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120171804A1 (en) * | 2004-11-30 | 2012-07-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
CN101878519A (zh) * | 2007-11-16 | 2010-11-03 | 应用材料股份有限公司 | 形成硅太阳能电池的背面点接触结构的方法 |
CN101976701A (zh) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | 背钝化电池的制造方法 |
CN102800738A (zh) * | 2011-05-24 | 2012-11-28 | 中国科学院微电子研究所 | 一种叉指型背接触式太阳能电池及其制备方法 |
CN202259320U (zh) * | 2011-07-06 | 2012-05-30 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009120A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源(太仓)有限公司 | N型晶体硅刻槽埋栅电池的制备方法 |
CN104051570A (zh) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | 一种太阳能电池的制作方法 |
CN104091842A (zh) * | 2014-07-07 | 2014-10-08 | 常州天合光能有限公司 | 分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法 |
CN104091842B (zh) * | 2014-07-07 | 2017-02-15 | 常州天合光能有限公司 | 分布式局域硼掺杂的双面感光晶体硅太阳电池及其制备方法 |
CN105633196A (zh) * | 2014-11-04 | 2016-06-01 | 中国东方电气集团有限公司 | 一种晶硅太阳能电池钝化工艺中的硅片表面处理方法 |
CN105633174A (zh) * | 2014-11-04 | 2016-06-01 | 中国东方电气集团有限公司 | 一种具有背面钝化结构的单晶硅太阳能电池及其制备方法 |
CN105633196B (zh) * | 2014-11-04 | 2017-06-06 | 中国东方电气集团有限公司 | 一种晶硅太阳能电池钝化工艺中的硅片表面处理方法 |
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Address after: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee after: Yidao New Energy Technology Co.,Ltd. Address before: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee before: A New Energy Technology (Quzhou) Co.,Ltd. |
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