CN103579436A - Semiconductor light emitting structure and manufacturing method thereof - Google Patents
Semiconductor light emitting structure and manufacturing method thereof Download PDFInfo
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- CN103579436A CN103579436A CN201210250396.6A CN201210250396A CN103579436A CN 103579436 A CN103579436 A CN 103579436A CN 201210250396 A CN201210250396 A CN 201210250396A CN 103579436 A CN103579436 A CN 103579436A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 186
- 238000000151 deposition Methods 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims 3
- 230000000694 effects Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 210000004276 hyalin Anatomy 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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Abstract
The invention provides a semiconductor light emitting structure and a manufacturing method thereof. The semiconductor light emitting structure comprises a first semiconductor layer, an active region light emitting layer and a second semiconductor layer, a first transparent conductive layer deposited on the second semiconductor layer, a first reflection layer which is deposited on the first transparent conductive layer and is partially etched to expose a part of the first transparent conductive layer, a second transparent conductive layer deposited on the first transparent conductive layer and the first reflection layer, a second reflection layer deposited on the second transparent conductive layer, a metal electrode layer deposited on the second transparent conductive layer and the second reflection layer, a bonding layer arranged on the metal electrode layer, wherein a figure etched on the second reflection layer corresponds to and covers the exposed first transparent conductive layer, the metal electrode layer and the transparent conductive layers form ohmic contact, and the bonding layer can be bonded on a support layer.
Description
Technical field
The present invention relates to semiconductor fabrication, more specifically, relate to a kind of semiconductor light emitting structure and manufacture method thereof.
Background technology
Light-emitting diode is with its efficient opto-electronic conversion, is expected to become " the 4th generation illuminations ".In order to make LED come into huge numbers of families, except cost needs further to reduce, technical also needs improves constantly, to improve light extraction efficiency and radiating effect.
For the positive assembling structure of LED, due to the beam projecting that hinders some that blocks of pn electrode.Technical staff develops homonymy LED inverted structure, but this inverted structure still can remove part luminescent layer owing to making n electrode future.No matter formal dress or inverted structure, all can affect due to the extinction of die bond layer or the poor thermal conductivity of substrate layer the photoelectric efficiency of LED.
In the Chinese invention patent application that is 200910215396.0 at application number, a kind of structure of carrying on the back plating reflector has been described.This catoptric arrangement makes full use of total reflection effect, the high reflectance of DBR specific direction and the omnidirectional reflection effect of metallic reflector that high low-refraction produces, and has reached very high reflecting effect.But this reflector has very high reflection efficiency, and does not have conductivity.When using on pGaN surface, the restriction of conductivity will be subject to.
In the product and patent of current vertical stratification, generally adopt ag material to make speculum and electrode.Although adopt Ag to make speculum, there is very high reflectivity, also solved conductive contact problem simultaneously.But Ag reflecting effect, less than adopting as the speculum of describing in ODR speculum or patent CN200910215396.0, is unfavorable for the further lifting of light extraction efficiency.
In addition, although common metal reflector reflection efficiency reaches more than 97%, 3% absorptivity can make light carrying out back reflective and causing a large amount of absorptions in chip structure.So reduction absorptivity can significantly be improved light and carry out the absorption of back reflective at chip structure, thereby significantly improves light extraction efficiency.
Thereby, in reality, there is such demand, there is the vertical LED structure in super reflector, or there is the inverted structure in super reflector.The speculum with higher reflecting effect is used on pGaN surface, and to improve the light extraction efficiency of chip, this will have very important significance.
Summary of the invention
For overcoming the above-mentioned defect of prior art, the present invention proposes a kind of semiconductor light emitting structure and manufacture method thereof.
According to an aspect of the present invention, proposed a kind of semiconductor light emitting structure, having comprised: the first semiconductor layer, active area luminescent layer and the second semiconductor layer; Be deposited on the first transparency conducting layer on the second semiconductor layer; Be deposited on the first reflector on the first hyaline layer, part is removed in this first reflector etching, spills part the first transparency conducting layer; Be deposited on the first transparency conducting layer and and the first reflector on the second transparency conducting layer;
Be deposited on the second reflection layer structure on the second transparency conducting layer, corresponding the first transparency conducting layer exposing that covers of the second etched figure in reflector; Be deposited on the second transparency conducting layer of exposure and the metal electrode layer on the second reflector, this metal electrode layer and transparency conducting layer form ohmic contact; Be positioned at the tack coat on metal electrode layer and be bonded on supporting layer; Be positioned at the electrode structure on the first semiconductor layer.
According to a further aspect in the invention, propose a kind of manufacture method of semiconductor light emitting structure, having comprised: step 1, on substrate, once formed resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer; Step 2, on p-type semiconductor layer, form the first transparency conducting layer, then form the first reflector, and the first reflector etching is removed to part, exposed portions serve the first transparency conducting layer; Step 3, on the first transparency conducting layer of the first reflector and exposure, deposition forms the second transparency conducting layer, on the second transparency conducting layer, form the second reflector, by the second etched figure in reflector to cover on the first transparency conducting layer the part not covered by the first reflector; Step 4, on the second transparency conducting layer and the second reflector, deposition forms metal electrode layer, forms ohmic contact with transparency conducting layer; Step 5, on metal electrode layer plated metal tack coat, and be bonded in conductive support layer, peeling liner bottom is made metal electrode structure on N-shaped semiconductor layer.
According to another aspect of the invention, propose a kind of manufacture method of semiconductor light emitting structure, having comprised: step 1, on substrate, once formed resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer; Step 2, on p-type semiconductor layer, form the first transparency conducting layer, then form the first reflector, and the first reflector etching is removed to part, exposed portions serve the first transparency conducting layer; Step 3, on cancellated the first reflector and the first transparency conducting layer, deposition forms the second transparency conducting layer, on the second transparency conducting layer, form the second reflector, the part that the second etched figure in reflector is not covered by the first reflector to cover the first transparency conducting layer; Step 4, etch part N-shaped layer, deposit metal electrodes layer on the second transparency conducting layer, the second reflector and the etching that expose N-shaped layer out, by metal electrode layer and transparency conducting layer and N-shaped semiconductor layer formation ohmic contact; Step 5, said structure reversion is bonded on support, forms inverted structure.
Ray structure of the present invention has high reflectance and good conductivity, this ray structure can be bonded on supporting layer, at the another side of ray structure, makes electrode structure, and this ray structure has improved light extraction efficiency, and has improved heat radiation and conduction approach.
Accompanying drawing explanation
Fig. 1 is the level schematic diagram according to a kind of semiconductor light emitting structure of the embodiment of the present invention;
Fig. 2 A-2E is the manufacture process schematic diagram according to a kind of semiconductor light emitting structure of the embodiment of the present invention;
Fig. 3 is according to the network structure schematic diagram in the first reflector depositing on the first hyaline layer in the ray structure of the embodiment of the present invention.
As shown in the figure, in order clearly to realize the structure of embodiments of the invention, specific structure and device have been marked in the drawings, but this is only for signal needs, be not intended to limit the invention in this ad hoc structure, device and environment, according to specific needs, those of ordinary skill in the art can adjust these devices and environment or revise, and the adjustment of carrying out or modification are still included in the scope of accompanying claim.
Embodiment
Below in conjunction with the drawings and specific embodiments, light emitting semiconductor device structure provided by the invention and manufacture method thereof are described in detail.
In the following description, will a plurality of different aspects of the present invention be described, yet, for those skilled in the art, can only utilize some or all structure of the present invention or flow process to implement the present invention.For the definition of explaining, set forth specific number, configuration and order, but clearly, in the situation that there is no these specific detail, also can not implement the present invention.In other cases, in order not obscure the present invention, for some well-known features, will no longer be described in detail.
Embodiment 1
As shown in Figure 1, in the first embodiment of the present invention, provide a kind of semiconductor light emitting structure,, this semiconductor structure comprises, is positioned at successively resilient coating, the first semiconductor layer, active area luminescent layer and the second semiconductor layer on substrate; The first transparency conducting layer depositing on the second semiconductor layer; The first reflection layer structure depositing on the first hyaline layer, and be etched into latticed figure; The second transparency conducting layer depositing on the first transparency conducting layer and latticed the first reflector; The second reflection layer structure depositing on the second transparency conducting layer, and etched figure, cover the first transparency conducting layer exposing, and form latticed figure.
Further, the metal electrode layer depositing on the second transparency conducting layer and the second reflector, this metal electrode layer and latticed transparency conducting layer form ohmic contact; On metal electrode layer, make tack coat and be bonded on supporting layer.
Further, remove the substrate on the first semiconductor layer, and make electrode structure on the first semiconductor layer.
Wherein, reflector can be the Bragg reflecting layer that replaces of the transparent medium that forms of low-index material or high low-refraction or the combination of metallic reflector or former three.
Wherein, the transparent dielectric layer of low-refraction, its thickness is 1-10 light-emitting diode outgoing light wavelength, its material is preferentially selected SiO2.
Wherein, metallic reflector, can be single-layer metal film or the combination of metal multilayer film system, and reflective metal layer is preferably aluminium or silver.
Wherein, the combination of above-mentioned three kinds of reflector, can be the transparent medium that first deposits low-refraction, then deposits Bragg reflecting layer, last plated metal reflector.Or, can be the transparent medium that first deposits low-refraction, plated metal reflector then.Or, can first deposit Bragg reflecting layer, then plated metal reflector.
Embodiment 2
In embodiments of the invention 2, a kind of manufacture method of semiconductor light emitting structure is provided, wherein, as shown in Fig. 2 A-2E, the method is described as follows.
As shown in Figure 2 A, on substrate, once form resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer.
As shown in Figure 2 B, on p-type semiconductor layer, form the first transparency conducting layer.
As shown in Figure 2 C, form the first reflector on the first transparency conducting layer, and the first reflector is etched into network structure, this mesh shape further as shown in Figure 3.
As shown in Figure 2 D, on the first transparency conducting layer of cancellated the first reflector and exposure, deposition forms the second transparency conducting layer.
As shown in Figure 2 E, on the second transparency conducting layer, form the second reflector, the second reflector is etched into certain figure, and make figure cover the part that the first transparency conducting layer is not covered by the first reflector.
On the second transparency conducting layer exposing and the second reflector, deposition forms metal electrode layer, forms ohmic contact with transparency conducting layer.
Last plated metal tack coat on electrode layer, and be bonded in conductive support layer, on silicon materials or CuW alloy.Can adopt the method for peeling off, remove Sapphire Substrate layer, and make metal electrode structure on N-shaped semiconductor layer.Like this form the inverted light-emitting diode (LED) structure of exempting from extinction with vertical stratification.
Embodiment 3
In embodiments of the invention 3, the manufacture method of another kind of semiconductor light emitting structure is provided, wherein, part diagram can be with reference to figure 2A-Fig. 2 E, and the method is described as follows.
As shown in Figure 2 A, on substrate, once form resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer.
As shown in Figure 2 B, on p-type semiconductor layer, form the first transparency conducting layer.
As shown in Figure 2 C, on the first transparency conducting layer, form the first reflector, and the first reflector is etched into network structure.
As shown in Figure 2 D, on the first transparency conducting layer of cancellated the first reflector and exposure, deposition forms the second transparency conducting layer.
As shown in Figure 2 E, on the second transparency conducting layer, form the second reflector, the second reflector is etched into certain figure, and make figure cover the part that the first transparency conducting layer is not covered by the first reflector.
Then, etch part N-shaped layer in this structure, in the second transparency conducting layer and the second reflector that expose, and on etching N-shaped layer out, deposition forms metal electrode layer, and forms ohmic contact with transparency conducting layer and N-shaped layer.
Chip is bonded on support conversely, forms inverted structure.Can adopt aurora to peel off and remove Sapphire Substrate layer, also can not remove Sapphire Substrate.
Finally it should be noted that, above embodiment is only in order to describe technical scheme of the present invention rather than present technique method is limited, the present invention can extend to other modification, variation, application and embodiment in application, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (12)
1. a semiconductor light emitting structure, comprising:
The first semiconductor layer, active area luminescent layer and the second semiconductor layer;
Be deposited on the first transparency conducting layer on the second semiconductor layer;
Be deposited on the first reflector on the first transparency conducting layer, this first reflector is partially-etched, expose portion the first transparency conducting layer;
Be deposited on the first transparency conducting layer and and the first reflector on the second transparency conducting layer;
Be deposited on the second reflection layer structure on the second transparency conducting layer, corresponding the first transparency conducting layer exposing that covers of the second etched figure in reflector;
Be deposited on the metal electrode layer on the second transparency conducting layer and the second reflector, this metal electrode layer and transparency conducting layer form ohmic contact;
The tack coat being positioned on metal electrode layer is bonded to this semiconductor light emitting structure on supporting layer;
Be positioned at the electrode structure on the first semiconductor layer.
2. semiconductor light emitting structure according to claim 1, wherein, described the first reflector or the second reflector are Bragg reflecting layer or the metallic reflectors that the transparent medium of low-index material, high low-refraction replace, or this three's combination in any.
3. semiconductor light emitting structure according to claim 1, wherein, the first semiconductor layer is N-shaped semiconductor layer, the second semiconductor layer is p-type semiconductor layer.
4. semiconductor light emitting structure according to claim 2, wherein, the transparent dielectric layer of described low-refraction, its thickness is 1-10 light-emitting diode outgoing light wavelength, its material is preferably SiO
2;
Described metallic reflector is single-layer metal film or the combination of metal multilayer film system, and reflecting metal is preferably aluminium or silver;
The alternatively distributed Bragg reflecting layer of described high low-refraction, material is TiO
2and SiO
2.
5. semiconductor light emitting structure according to claim 2, wherein, the combination of described three kinds of reflector, comprising: being deposited on the transparent medium of the low-refraction of bottom, is Bragg reflecting layer on it, and upper is metallic reflector; Or the transparent medium of the low-refraction of deposition bottom, the metallic reflector for depositing on it.
6. semiconductor light emitting structure according to claim 1, wherein, that the first reflector is etched into is netted, strip or random shape figure.
7. a manufacture method for semiconductor light emitting structure, comprising:
Step 1, on substrate, once form resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer;
Step 2, on p-type semiconductor layer, form the first transparency conducting layer, then form the first reflector, and the first reflector etching is removed to part, exposed portions serve the first transparency conducting layer;
Step 3, on the first transparency conducting layer of the first reflector and exposure, deposition forms the second transparency conducting layer, on the second transparency conducting layer, form the second reflector, the second etched figure in reflector is covered to the part not covered by the first reflector on the first transparency conducting layer;
Step 4, on the second transparency conducting layer and the second reflector, deposition forms metal electrode layer, forms ohmic contact with transparency conducting layer;
Step 5, on metal electrode layer plated metal tack coat, and be bonded in conductive support layer, peeling liner bottom is made metal electrode structure on N-shaped semiconductor layer.
8. method according to claim 7, wherein, described the first reflector and the second reflector are Bragg reflecting layer or the metallic reflectors that the transparent medium of low-index material, high low-refraction replace, or this three's combination in any.
9. method according to claim 8, wherein, the transparent dielectric layer of described low-refraction, its thickness is 1-10 light-emitting diode outgoing light wavelength, its material is preferably SiO
2;
Described metallic reflector is single-layer metal film or the combination of metal multilayer film system, and reflecting metal is preferably aluminium or silver;
The described alternatively distributed Bragg reflecting layer of high low-refraction, material is TiO
2and SiO
2;
The combination of described three kinds of reflector, comprising: the transparent medium of the low-refraction of deposition bottom, and the Bragg reflecting layer depositing it on, goes up the metallic reflector of deposition most; Or, the transparent medium of the low-refraction of deposition bottom, the metallic reflector of deposition on it; Or, the transparent medium of the low-refraction of deposition bottom, the Bragg reflecting layer of deposition height refraction index profile on it.
10. a manufacture method for semiconductor light emitting structure, comprising:
Step 1, on substrate, once form resilient coating, N-shaped semiconductor layer, active area luminescent layer and p-type semiconductor layer;
Step 2, on p-type semiconductor layer, form the first transparency conducting layer, then form the first reflector, and the first reflector etching is removed to part, exposed portions serve the first transparency conducting layer;
Step 3, on the first reflector and the first transparency conducting layer, deposition forms the second transparency conducting layer, on the second transparency conducting layer, form the second reflector, the second etched figure in reflector is covered to the part that the first transparency conducting layer is not covered by the first reflector;
Step 4, etch part N-shaped layer, deposit metal electrodes layer on the second transparency conducting layer, the second reflector and the etching that expose N-shaped layer out, by metal electrode layer and transparency conducting layer and N-shaped semiconductor layer formation ohmic contact;
Step 5, said structure reversion is bonded on support, forms inverted structure.
11. methods according to claim 10, wherein, described the first reflector and the second reflector are Bragg reflecting layer or the metallic reflectors that the transparent medium of low-index material, high low-refraction replace, or this three's combination in any.
12. methods according to claim 11, wherein, the transparent dielectric layer of described low-refraction, its thickness is 1-10 light-emitting diode outgoing light wavelength, its material is preferably SiO
2;
Described metallic reflector is single-layer metal film or the combination of metal multilayer film system, and reflecting metal is preferably aluminium or silver;
The described alternatively distributed Bragg reflecting layer of high low-refraction, its material is preferably TiO
2and SiO
2;
The combination of described three kinds of reflector, comprising: the transparent medium of the low-refraction of deposition bottom, and the Bragg reflecting layer depositing it on, goes up the metallic reflector of deposition most; Or, the transparent medium of the low-refraction of deposition bottom, the metallic reflector of deposition on it; Or, the transparent medium of the low-refraction of deposition bottom, the Bragg reflecting layer of deposition height refraction index profile on it.
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| CN104134723A (en) * | 2014-08-08 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Vertical type LED chip structure and manufacturing method thereof |
| CN105895776A (en) * | 2015-02-17 | 2016-08-24 | 新世纪光电股份有限公司 | Light emitting device and the manufacturing method thereof |
| CN107946427A (en) * | 2017-11-20 | 2018-04-20 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode chip for backlight unit with high-reflection region and highly conductive region electrode |
| US10326047B2 (en) | 2015-09-02 | 2019-06-18 | Genesis Photonics Inc. | Light emitting diode and manufacture method thereof |
| CN109994536A (en) * | 2019-04-28 | 2019-07-09 | 武汉华星光电半导体显示技术有限公司 | Tft array substrate and OLED display panel |
| CN111092138A (en) * | 2018-10-23 | 2020-05-01 | 首尔伟傲世有限公司 | Flip-chip type light emitting diode chip |
| CN112201733A (en) * | 2020-10-13 | 2021-01-08 | 西安电子科技大学 | GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method |
| CN112271241A (en) * | 2020-10-30 | 2021-01-26 | 华引芯（武汉）科技有限公司 | Manufacturing process of high-power LED chip and LED chip |
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| CN109994536A (en) * | 2019-04-28 | 2019-07-09 | 武汉华星光电半导体显示技术有限公司 | Tft array substrate and OLED display panel |
| CN112201733A (en) * | 2020-10-13 | 2021-01-08 | 西安电子科技大学 | GaN-based light emitting diode based on self-assembly submicron ITO/Sc/ITO current expansion layer and preparation method |
| CN112271241A (en) * | 2020-10-30 | 2021-01-26 | 华引芯（武汉）科技有限公司 | Manufacturing process of high-power LED chip and LED chip |
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