CN101635325A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN101635325A CN101635325A CN200810134401A CN200810134401A CN101635325A CN 101635325 A CN101635325 A CN 101635325A CN 200810134401 A CN200810134401 A CN 200810134401A CN 200810134401 A CN200810134401 A CN 200810134401A CN 101635325 A CN101635325 A CN 101635325A
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Abstract
The invention provides a light-emitting diode and a process thereof. The light-emitting diode comprises a metal reflecting layer so as to improve the reflection efficiency of light in the light-emitting diode and simultaneously reduce resistance and power loss. Besides, a buffer layer is arranged between the metal reflecting layer and a semiconductor, and has a mixed structure of metal and a nonmetal transparent medium so as to reduce the stress between the semiconductor and the metal and decrease the possibility of grain collapse.
Description
Technical field
The present invention relates to a kind of light-emitting diode and technology thereof.
Background technology
Known light-emitting diode comprises Semiconductor substrate, is positioned at ray structure and two Ohm contact electrodes on the Semiconductor substrate, and wherein these two Ohm contact electrodes are respectively formed on the ray structure and on the another side of substrate.
Ray structure is made up of the III-V compound semiconductor layer that contains aluminium of multilayer usually, for example: can send the AlGaAs of infrared light and ruddiness, maybe can send the AlGaInP of green-yellow light, gold-tinted and ruddiness.Above-mentioned all directions of light directive that ray structure sent (also being same tropism), yet, the energy gap energy of above-mentioned substrate is usually less than the energy of visible light, therefore substrate can absorb ray structure and sends most light, and make the external quantum efficiency (external quantum efficiency) of light-emitting diode significantly reduce, so the brightness of light-emitting diode also can be lowered thereupon.
Now existing several different methods proposes, to solve the problem of substrate extinction.Except the ray structure on the substrate being clipped in upper and lower two distribution Bragg reflectors (distributed Bragg reflectors, DBRs) beyond the known method between, U.S. Pat 4570172 has also proposed relevant structure-improved with US5237581.Using under the situation of Bragg mirror, when light directive substrate that ray structure sent, can be reflected back, thereby solve the raise problems in terms of light absorption of substrate.Yet distribution Bragg reflector only has high reflectivity to the incident light that vertically enters, and when the incidence angle of light increased, its reflectivity can decrease.Therefore, even use distribution Bragg reflector, the external quantum efficiency of light-emitting diode and the lifting of brightness thereof still can be restricted.
U.S. Pat 5376580 proposes two kinds of methods of utilizing wafer to paste (wafer bonding) technology in addition.First method is the light emitting diode epitaxial structure of growing up earlier on the GaAs substrate, and then utilizes the wafer technology for applying to join light emitting diode epitaxial structure to transparent substrates.Second method is the light emitting diode epitaxial structure of growing up earlier on the GaAs substrate, and then utilize the wafer technology for applying will luminous two and the external structural engagement of prolonging arrive speculum.Above-mentioned two kinds of methods all promote the external quantum efficiency of light-emitting diode by the GaAs substrate that removes the meeting extinction, wherein, first method utilizes transparent substrates to come printing opacity, and second method utilizes speculum to come reverberation.Yet use the problem of transparent substrates to be in the first method: wafer is pasted to be needed to carry out under high temperature, therefore can cause the wherein redistribution of alloy, and then reduces the performance of light-emitting diode.Use the problem of speculum to be in the second method: directly the reflecting surface with speculum engages in the wafer taping process, therefore can cause reflecting surface coarse or rotten, and the reflecting surface of speculum is polluted.
U.S. Pat 6797987 also proposes a kind of light-emitting diode that uses reflective metal layer, its including transparent conducting oxide layer with indium tin oxide (ITO) layer is clipped between reflective metal layer and the ray structure, so that reflective metal layer can not react with ray structure in the wafer taping process.In order to promote the ohmic contact between ITO layer and the ray structure, the structure that above-mentioned patent proposed forms ohmic contact grillwork (ohmic contact grid pattern) or passage (channels) in the ITO layer, or forms alloying metal mesh (alloy metal mesh) between ITO layer and ray structure.Because the technology of above-mentioned structure is rather complicated, so its manufacturing cost can increase.The alloying metal mesh need utilize high temperature alloy technology to make, and suitable difficulty alloying metal will be etched into the shape of mesh the time.In addition, the thickness of alloy notes that also if the alloying metal layer is too thin, then the ohmic contact between alloying metal and the ray structure will be not good, but if the alloying metal layer is too thick, the engaging force after then wafer is pasted will be not enough.
Summary of the invention
In above-mentioned background of invention, in order to meet the demand of some interests on the industry, the invention provides a kind of light-emitting diode can be in order to solve the target that above-mentioned traditional light-emitting diode fails to reach.
An object of the present invention is to provide a kind of light-emitting diode, it forms ray structure on substrate, and this ray structure comprises first semiconductor layer and second semiconductor layer, and wherein first semiconductor layer and second semiconductor layer are positioned at the both sides of ray structure.At first, form dielectric layer on semiconductor layer, dispose photoresistance again on dielectric layer,, form a plurality of dielectric structures dielectric layer is etched a plurality of spaces by photoresistance; Or the configuration photoresistance to deposit a plurality of dielectric structures on first semiconductor by the space between photoresistance, removes photoresistance to form a plurality of spaces between a plurality of dielectric structures again on first semiconductor layer, and wherein above-mentioned a plurality of dielectric structures are formed the medium array.Subsequently, form a plurality of metal structures again in a plurality of spaces, forming metal array, and medium array and metal array are staggered to form above-mentioned resilient coating.Afterwards, form the reflector on resilient coating.
Finish after the said structure, form substitute substrate again on the reflector, substituting the initial substrates of light-emitting diode, and the initial substrates of light-emitting diode is broken away from, to form contact electrode on the second above-mentioned semiconductor layer.
The present invention includes a kind of light-emitting diode, comprise: ray structure, comprise first semiconductor layer and second semiconductor layer, lay respectively at the both sides of this ray structure; Resilient coating is positioned on this first semiconductor layer, and this resilient coating comprises medium array and metal array, and wherein this metal array is positioned at the space between this medium array; And the reflector, be positioned on this resilient coating, with the light of reflection by this medium array transmission.
In described light-emitting diode, also comprise substitute substrate and contact electrode, wherein this substitute substrate is positioned on this reflector, and this contact electrode is positioned on this second semiconductor layer, wherein the thickness of this medium array is more than or equal to the wavelength of 1/6 this LED source, and the ratio of this medium array and this metal array is 1: 1.16.
The present invention includes a kind of light-emitting diode, comprise: ray structure, comprise first semiconductor layer and second semiconductor layer, lay respectively at the both sides of this ray structure; A plurality of dielectric structures are positioned on this first semiconductor layer; A plurality of metal structures are positioned on this first semiconductor layer, and wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And the reflector, be positioned on these a plurality of dielectric structures and these a plurality of metal structures, with reflection ray.
In described light-emitting diode, also comprise substitute substrate and contact electrode, wherein this substitute substrate is positioned on this reflector, and this contact electrode is positioned on this second semiconductor layer, wherein the end view of this dielectric structure is trapezoidal, make the reflector on trapezoidal hypotenuse, form the inclined-plane, with reflection ray, and or a plurality of dielectric structure or this a plurality of metal structures be arranged in netted.
The present invention includes a kind of catoptric arrangement of semiconductor element, comprise: resilient coating, be positioned on the semiconductor layer of this semiconductor element, and this resilient coating comprises medium array and metal array, wherein this metal array is positioned at the space between this medium array; And the reflector, be positioned on this resilient coating, with the light of reflection by this medium array transmission.
The present invention includes a kind of catoptric arrangement of semiconductor element, comprise: a plurality of dielectric structures are positioned on the semiconductor layer of this semiconductor element; A plurality of metal structures are positioned on this semiconductor layer, and wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And the reflector, be positioned on these a plurality of dielectric structures and these a plurality of metal structures, with reflection ray.
The present invention includes a kind of manufacturing method for LED, comprise the following step: the ray structure that forms light-emitting diode is on substrate; Form dielectric layer on first semiconductor layer of this ray structure; The configuration photoresistance is on this dielectric layer; By photoresistance this dielectric layer is etched a plurality of spaces, to form a plurality of dielectric structures; Form a plurality of metal structures in these a plurality of spaces, wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And form the reflector on these a plurality of dielectric structures and these a plurality of metal structures.
In described manufacturing method for LED, also comprise: form substitute substrate on this reflector; Separate this substrate with laser or chemical etching stripping means; And form contact electrode on second semiconductor layer, relative both sides that are positioned at this ray structure of this first semiconductor layer wherein with this second semiconductor layer; Wherein these a plurality of metal structures form by evaporation, and the reflector forms by modes such as evaporation, sputter, change plating or plating.
The present invention includes a kind of manufacturing method for LED, comprise the following step: the ray structure that forms light-emitting diode is on substrate; The configuration photoresistance is on first semiconductor layer of this ray structure; Deposit a plurality of dielectric structures on this first semiconductor by the space between this photoresistance; Remove this photoresistance to form a plurality of spaces between these a plurality of dielectric structures; Form a plurality of metal structures in these a plurality of spaces, wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And form the reflector on these a plurality of dielectric structures and these a plurality of metal structures.
In described manufacturing method for LED, also comprise: form substitute substrate on this reflector; Separate this substrate with laser or chemical etching stripping means; And form contact electrode on second semiconductor, relative both sides that are positioned at this ray structure of this first semiconductor layer wherein with this second semiconductor; Wherein these a plurality of dielectric structures are by physical vapor deposition (PVD) or high density plasma enhanced chemical vapor deposition (HDP-CVD, High Density Plasma Chemical Vapor Deposition) method forms, these a plurality of metal structures form by evaporation, and this reflector forms by modes such as evaporation, sputter, change plating or plating.
The present invention can improve the reflection efficiency of light in light-emitting diode inside, also can reduce resistance simultaneously, reduces power loss, and reduces semiconductor and intermetallic stress, reduces the possibility that crystal grain bursts apart.
Description of drawings
Figure 1A is the side structure schematic diagram of light-emitting diode;
Figure 1B is the structural representation of LED reflection structure;
Fig. 1 C, Fig. 1 D and Fig. 1 E are the plan structure schematic diagram of LED reflection structure; And
Fig. 2 and Fig. 3 are the process chart of light-emitting diode.
Wherein, description of reference numerals is as follows:
110 ray structures
112 first semiconductor layers
114 second semiconductor layers
116 conversion zones
120 resilient coatings
122 dielectric structures
124 metal structures
126 medium arrays
128 metal arrays
130 reflector
140 substitute substrate
150 contact electrodes
160 dielectric layers
180 substrates
190 photoresistances
210～290 steps
310～380 steps
Embodiment
The present invention is a kind of light-emitting diode and technology thereof in this direction of inquiring into.In order to understand the present invention up hill and dale, detailed steps and composition thereof will be proposed in following description.Apparently, execution of the present invention is not defined in the specific details that the technical staff had the knack of of light-emitting diode and technology thereof.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.The preferred embodiments of the present invention can be described in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention do not limited, and it is as the criterion with appending claims.
For the light of strengthening known light-emitting diode takes out performance, U.S. Pat 7335924 proposes a kind of light-emitting diode with reflector, it comprises ray structure, and the non-alloy ohmic contact layer, first reflector and the substrate that form in regular turn on ray structure.The principal character of foregoing invention be non-alloy ohmic contact layer with first reflector engage effect (joint effect), to solve the extinction problem of substrate.First reflector is as speculum, and its material is simple metal or the metal nitride with excellent reflection.Non-alloy ohmic contact layer is clipped between the ray structure and first reflector, and the material of non-alloy ohmic contact layer can have optical transparence.Yet, have the electric conducting material of optical transparence, have higher resistance usually, or lower light transmittance.
The light-emitting diode that U.S. Pat 20050205886 proposes comprises transparent penetrate through reflective layer.Generally speaking, the light transmittance of transparent penetrate through reflective layer is lower usually, thereby causes light to descend at the reflectivity of above-mentioned light-emitting diode inside.In addition, transparent penetrate through reflective layer also can have the higher coefficient of expansion, is unfavorable for the manufacturing of light-emitting diode, also can reduce its qualification rate.
The light-emitting diode that U.S. Pat 20040041164 proposes, its principal character comprise light taking-up array as catoptric arrangement in the light-emitting diode for this reason, and wherein this light takes out array configurations on the substrate of light-emitting diode.When light incided substrate by light taking-up array, light can be reflected.Yet this kind reflection need utilize the mode of total reflection, still has its restrictive condition, the effect that also too late metal directly reflects,
In addition, " LED R﹠amp; D Lab., LG Electronics Institute of Technology:Electrochimica Acta 52 (2007) 5258-5265 " delivered in light-emitting diode stress phenomena (Stress behavior of electrodeposited copper films as mechanicalsupporters for light emitting diodes) with the acid copper film; and it utilizes metal directly to engage with semiconductor; so internal stress can't discharge, and can cause the crystal grain perk, burst apart.
Because above-mentioned various shortcoming, the present invention proposes a kind of light-emitting diode, and it comprises metallic reflector, to improve the reflection efficiency of light in light-emitting diode inside, also can reduce resistance simultaneously, reduces power loss.Moreover, also comprising resilient coating between above-mentioned metallic reflector and the semiconductor, this resilient coating is the mixed structure of metal and nonmetal transparent medium, to reduce semiconductor and intermetallic stress, reduces the possibility that crystal grain bursts apart.
Above-mentioned structure is formed on the known light-emitting diode, and wherein known light-emitting diode forms ray structure on substrate, and this ray structure comprises first semiconductor layer, second semiconductor layer of conversion zone and both sides thereof.At first, can form dielectric layer earlier on first semiconductor layer, dispose photoresistance again on dielectric layer,, form a plurality of dielectric structures dielectric layer is etched a plurality of spaces by photoresistance; Or the configuration photoresistance is on first semiconductor layer earlier, to deposit a plurality of dielectric structures on first semiconductor by the space between photoresistance, remove photoresistance again to form a plurality of spaces between a plurality of dielectric structures, wherein above-mentioned a plurality of dielectric structures are formed the medium array.Subsequently, form a plurality of metal structures again in a plurality of spaces, forming metal array, and medium array and metal array are staggered to form above-mentioned resilient coating.Afterwards, form the reflector on resilient coating.
Because the arrangement mode of dielectric structure and the configuration of metal structure interleaved, can allocate the thermal coefficient of expansion of resilient coating, the dielectric structure that metal is met can utilize resilient coating when hot reduces semiconductor and intermetallic stress as wider space, reduce the crystal grain probability of bursting apart, promote qualification rate.In addition, above-mentioned reflector also can be metal material, promotes luminous efficiency with the characteristic of utilizing its high reflectance.
Finish after the said structure, form substitute substrate again on the reflector, substituting the initial substrates of light-emitting diode, and the initial substrates of light-emitting diode is broken away from, to form contact electrode on the second above-mentioned semiconductor layer.
Shown in Figure 1A, it is the side structure schematic diagram of above-mentioned light-emitting diode.This light-emitting diode comprises ray structure 110, resilient coating 120, reflector 130, substitute substrate 140 and contact electrode 150.Above-mentioned ray structure 110 comprises first semiconductor layer 112, second semiconductor layer 114 and conversion zone 116, wherein, first semiconductor layer 112 and second semiconductor layer 114 lay respectively at the both sides of ray structure 110, and conversion zone 116 is between first semiconductor layer 112 and second semiconductor layer 114.This first semiconductor layer 112 can be P-GaN, and second semiconductor layer 114 can be N-GaN.
Above-mentioned resilient coating 120 is positioned on first semiconductor layer 112, and this resilient coating 120 comprises a plurality of dielectric structures 122 and a plurality of metal structures 124, and wherein, a plurality of metal structures 124 are spaced with a plurality of dielectric structures 122.Above-mentioned reflector 130 is positioned on the resilient coating 120, and the side-looking figure of each dielectric structure 122 can be trapezoidal, makes reflector 130 form the inclined-plane on the hypotenuse of trapezoidal dielectric structure 122, with reflection ray, shown in Figure 1B, wherein the material in reflector 130 can be aluminium (Al).
Another of above-mentioned resilient coating 120 implemented example can comprise medium array 126 and metal array 128, and wherein metal array 128 is positioned at the space of 126 of medium arrays, and reflector 130 forms a plurality of inclined-planes with medium array 126 connections, with reflection ray.Above-mentioned medium array 126 can be network structure, and all the other spaces then are metal array 128, shown in Fig. 1 C.In addition, above-mentioned medium array 126 can be the array of independent dispersed structure, forms network structure so that be arranged in the metal array 128 of remaining space, shown in Fig. 1 D.Certainly, medium array 126 and metal array 128 also can be the structure of irregular alignment, shown in Fig. 1 E.
This medium array 126 also can be arranged by above-mentioned a plurality of dielectric structures 122 and be formed, and in like manner, metal array 128 also can be arranged by above-mentioned a plurality of metal structures 124 and form.In addition, the above-mentioned dielectric structure 122 or the thickness of medium array 126 is more than or equal to the wavelength of 1/6 LED source, and can be air, SiO
x, SiO
xN
y, class bores light transmission mediums such as carbon (diamond like carbon) or diamond.Above-mentioned metal structure 124 or metal array 128 can be made up of platinum (Pt), palladium (Pd), gold (Au), or are made up of nickel (Ni) and gold.And in preferred examples of the present invention, this dielectric structure 122 or medium array 126 are SiO
2, and the ratio of dielectric structure 122 and metal structure 124, or the ratio of medium array 126 and metal array 128 is Pd/Pt/Au: SiO
2=1: 1.16.
Refer again to shown in Figure 1A, above-mentioned substitute substrate 140 is on reflector 130, and to replace the initial substrates that forms ray structure 110, wherein, this substitute substrate 140 can be copper (Cu).In addition, contact electrode 150 is on second semiconductor.
The catoptric arrangement that above-mentioned resilient coating 120 and reflector 130 are formed also can be applicable to be not limited to the catoptric arrangement of light-emitting diode in the semiconductor element of other identical purposes with reflection ray except can be used for light-emitting diode.
With reference to shown in Figure 2, the present invention also proposes a kind of manufacturing method for LED, comprises the following step: at first, as step 210, the ray structure 110 that forms light-emitting diode is on substrate 180.Shown in step 220, form dielectric layer 160 again on first semiconductor layer 112 of ray structure 110.According to shown in the step 230, configuration photoresistance 190 is on dielectric layer 160 again.Subsequently, dielectric layer 160 is etched a plurality of spaces, to form a plurality of dielectric structures 122, shown in step 240 by photoresistance 190.For another example shown in the step 250, form a plurality of metal structures 124 in a plurality of spaces afterwards, wherein a plurality of metal structures 124 are spaced with a plurality of dielectric structures 122.Then, form reflector 130 on a plurality of dielectric structures 122 and a plurality of metal structures 124, shown in step 260.According to shown in the step 270, form substitute substrate 140 on reflector 130 again.Subsequently, separate above-mentioned substrate 180, shown in step 280.At last, shown in step 290, form contact electrode 150 on second semiconductor layer 116, wherein semiconductor layer 112 and second semiconductor layer, the 116 relative both sides that are positioned at ray structure 110.
Above-mentioned a plurality of metal structures 124 can form by the physical vapor deposition (PVD) method, and in preferred enforcement example of the present invention, a plurality of metal structures 124 form with evaporation.Above-mentioned reflector 130 can form by modes such as evaporation, sputter, change plating or plating, and in preferred enforcement example of the present invention, reflector 130 forms with evaporation.In addition, the method for above-mentioned separate substrate 180 comprises laser or chemical etching is peeled off.
With reference to shown in Figure 3, the present invention also proposes another kind of manufacturing method for LED, comprises the following step: at first, as step 310, the ray structure 110 that forms light-emitting diode is on substrate 180.Shown in step 320, configuration photoresistance 190 is on first semiconductor layer 112 of ray structure 110, and the space by 190 of photoresistances deposits a plurality of dielectric structures 122 on first semiconductor 112 again.Subsequently, remove photoresistance 190 to form a plurality of spaces between a plurality of dielectric structures 122, shown in step 330.For another example shown in the step 340, form a plurality of metal structures 124 in a plurality of spaces afterwards, wherein a plurality of metal structures 124 are spaced with a plurality of dielectric structures 122.Then, form reflector 130 on a plurality of dielectric structures 122 and a plurality of metal structures 124, shown in step 350.According to shown in the step 360, form substitute substrate 140 on reflector 130 again.Subsequently, separate above-mentioned substrate 180, shown in step 370.At last, shown in step 380, form contact electrode 150 on second semiconductor layer 116, wherein first semiconductor layer 112 and second semiconductor layer, the 116 relative both sides that are positioned at ray structure 110.
Above-mentioned a plurality of dielectric structures can form by physical vapor deposition (PVD) or high density plasma enhanced chemical vapor deposition (HDP-CVD, High Density Plasma Chemical Vapor Deposition) method.Similarly, above-mentioned a plurality of metal structures 124 also can form by the physical vapor deposition (PVD) method, and in preferred enforcement example of the present invention, a plurality of metal structures 124 form with evaporation.Above-mentioned reflector 130 also can form by modes such as evaporation, sputter, change plating or plating, and in preferred enforcement example of the present invention, reflector 130 forms with evaporation.In addition, the method for above-mentioned separate substrate 180 comprises laser or chemical etching is peeled off.
Apparently, according to the description among the top embodiment, the present invention has many corrections and difference.Therefore need be understood in the scope of its additional claim, except above-mentioned detailed description, the present invention can also implement in other embodiment widely.Above-mentioned is the preferred embodiments of the present invention only, is not in order to limit claim of the present invention; In every case other does not break away from the equivalence change of being finished under the disclosed spirit or revises, and all should be included in described claims.
Claims (10)
1. light-emitting diode comprises:
Ray structure comprises first semiconductor layer and second semiconductor layer, lays respectively at the both sides of this ray structure;
Resilient coating is positioned on this first semiconductor layer, and this resilient coating comprises medium array and metal array, and wherein this metal array is positioned at the space between this medium array; And
The reflector is positioned on this resilient coating, with the light of reflection by this medium array transmission.
2. according to the light-emitting diode of claim 1, also comprise substitute substrate and contact electrode, wherein this substitute substrate is positioned on this reflector, and this contact electrode is positioned on this second semiconductor layer, wherein the thickness of this medium array is more than or equal to 1/6 of this LED source wavelength, and the ratio of this medium array and this metal array is 1: 1.16.
3. light-emitting diode comprises:
Ray structure comprises first semiconductor layer and second semiconductor layer, lays respectively at the both sides of this ray structure;
A plurality of dielectric structures are positioned on this first semiconductor layer;
A plurality of metal structures are positioned on this first semiconductor layer, and wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And
The reflector is positioned on these a plurality of dielectric structures and these a plurality of metal structures, with reflection ray.
4. according to the light-emitting diode of claim 3, also comprise substitute substrate and contact electrode, wherein this substitute substrate is positioned on this reflector, and this contact electrode is positioned on this second semiconductor layer, wherein the end view of this dielectric structure is trapezoidal, make the reflector on trapezoidal hypotenuse, form the inclined-plane, with reflection ray, and or a plurality of dielectric structure or this a plurality of metal structures be arranged in netted.
5. the catoptric arrangement of a semiconductor element comprises:
Resilient coating is positioned on the semiconductor layer of this semiconductor element, and this resilient coating comprises medium array and metal array, and wherein this metal array is positioned at the space between this medium array; And
The reflector is positioned on this resilient coating, with the light of reflection by this medium array transmission.
6. the catoptric arrangement of a semiconductor element comprises:
A plurality of dielectric structures are positioned on the semiconductor layer of this semiconductor element;
A plurality of metal structures are positioned on this semiconductor layer, and wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And
The reflector is positioned on these a plurality of dielectric structures and these a plurality of metal structures, with reflection ray.
7. manufacturing method for LED comprises the following step:
The ray structure that forms light-emitting diode is on substrate;
Form dielectric layer on first semiconductor layer of this ray structure;
The configuration photoresistance is on this dielectric layer;
By photoresistance this dielectric layer is etched a plurality of spaces, to form a plurality of dielectric structures;
Form a plurality of metal structures in these a plurality of spaces, wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And
Form the reflector on these a plurality of dielectric structures and these a plurality of metal structures.
8. according to the manufacturing method for LED of claim 7, also comprise:
Form substitute substrate on this reflector;
Separate this substrate with laser or chemical etching stripping means; And
Form contact electrode on second semiconductor layer, wherein the relative both sides that are positioned at this ray structure of this first semiconductor layer with this second semiconductor layer;
Wherein these a plurality of metal structures form by evaporation, and the reflector forms by modes such as evaporation, sputter, change plating or plating.
9. manufacturing method for LED comprises the following step:
The ray structure that forms light-emitting diode is on substrate;
The configuration photoresistance is on first semiconductor layer of this ray structure;
Deposit a plurality of dielectric structures on this first semiconductor by the space between this photoresistance;
Remove this photoresistance to form a plurality of spaces between these a plurality of dielectric structures;
Form a plurality of metal structures in these a plurality of spaces, wherein these a plurality of metal structures are spaced with these a plurality of dielectric structures; And
Form the reflector on these a plurality of dielectric structures and these a plurality of metal structures.
10. according to the manufacturing method for LED of claim 9, also comprise:
Form substitute substrate on this reflector;
Separate this substrate with laser or chemical etching stripping means; And
Form contact electrode on second semiconductor, wherein the relative both sides that are positioned at this ray structure of this first semiconductor layer with this second semiconductor;
Wherein these a plurality of dielectric structures are by physical vapor deposition (PVD) or high density plasma enhanced chemical vapor deposition (HDP-CVD, High Density Plasma Chemical Vapor Deposition) method forms, these a plurality of metal structures form by evaporation, and this reflector forms by modes such as evaporation, sputter, change plating or plating.
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| CN102222745A (en) * | 2011-06-23 | 2011-10-19 | 映瑞光电科技(上海)有限公司 | LED (Light Emitting Diode) and manufacturing method thereof |
| CN102244169A (en) * | 2011-06-23 | 2011-11-16 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
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| CN100379042C (en) * | 2005-02-18 | 2008-04-02 | 乐清市亿昊科技发展有限公司 | Substrate structure for light-emitting diode tube core and method for making same |
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| CN102222745A (en) * | 2011-06-23 | 2011-10-19 | 映瑞光电科技(上海)有限公司 | LED (Light Emitting Diode) and manufacturing method thereof |
| CN102244169A (en) * | 2011-06-23 | 2011-11-16 | 映瑞光电科技(上海)有限公司 | Light-emitting diode and manufacturing method thereof |
| CN103515493A (en) * | 2012-06-19 | 2014-01-15 | 隆达电子股份有限公司 | Manufacturing process of vertical solid-state light-emitting element |
| CN103515493B (en) * | 2012-06-19 | 2016-06-08 | 隆达电子股份有限公司 | Manufacturing process of vertical solid-state light-emitting element |
| CN102983414A (en) * | 2012-11-09 | 2013-03-20 | 深圳光启创新技术有限公司 | Reflective array antenna |
| CN102983414B (en) * | 2012-11-09 | 2014-04-16 | 深圳光启创新技术有限公司 | Reflective plane of reflective array antenna |
| WO2014071866A1 (en) * | 2012-11-09 | 2014-05-15 | 深圳光启创新技术有限公司 | Reflective array surface and reflective array antenna |
| US9583839B2 (en) | 2012-11-09 | 2017-02-28 | Kuang-Chi Innovative Technology Ltd. | Reflective array surface and reflective array antenna |
| CN111201617A (en) * | 2019-12-16 | 2020-05-26 | 重庆康佳光电技术研究院有限公司 | Light emitting diode chip and preparation method thereof |
| CN116364825A (en) * | 2023-06-01 | 2023-06-30 | 江西兆驰半导体有限公司 | Composite buffer layer, preparation method thereof, epitaxial wafer and light-emitting diode |
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