CN103578990A - TFT manufacturing method, displaying component manufacturing method, displaying component and displaying device - Google Patents
TFT manufacturing method, displaying component manufacturing method, displaying component and displaying device Download PDFInfo
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- CN103578990A CN103578990A CN201210258621.0A CN201210258621A CN103578990A CN 103578990 A CN103578990 A CN 103578990A CN 201210258621 A CN201210258621 A CN 201210258621A CN 103578990 A CN103578990 A CN 103578990A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000001259 photo etching Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a TFT manufacturing method. The TFT manufacturing method comprises the step of forming a source electrode layer and carrying out photoetching on the source electrode layer to form a source electrode, and the step of depositing a drain electrode layer made of materials different from the materials of the source electrode layer and carrying out photoetching on the drain electrode layer to form a drain electrode. Or, the TFT manufacturing method comprises the step of forming a drain electrode layer and carrying out photoetching on a drain electrode layer to form a drain electrode, and the step of depositing a source electrode layer made of materials different from the materials of the drain electrode layer and carrying out photoetching on a source electrode layer to from a source electrode. The invention further correspondingly discloses a displaying component manufacturing method, a displaying component and a displaying device. Due to the fact that the source electrode and the drain electrode are formed in different layers, the length of a TFT channel can be reduced as much as possible on the premise of not affecting the forming of the TFT channel, and then the displaying effect is improved.
Description
Technical field
The present invention relates to lcd technology, relate in particular to the manufacture method of a kind of Thin Film Transistor (TFT) (Thin Film Transistor, TFT), display device and display device, display unit.
Background technology
In field of liquid crystal display, the little TFT of employing channel length is conducive to improve the aperture opening ratio of pixel, and pixel aperture ratio is higher, and light transmittance is higher, and display effect is better.
But, in prior art, in the TFT structure that twisted nematic (TN) panel, fringe field switching (FFS) panel, in-plane conversion (IPS) panel etc. adopt, source electrode (source) is formed on the same layer that metal material is identical with drain electrode (drain), so, the formation of source electrode and drain electrode can only complete etching in same step manufacture craft, like this, just can not adjust arbitrarily the length of TFT raceway groove, and if the length of TFT raceway groove is too small, photoresist is easy to residue in raceway groove, causes the source electrode of TFT to be connected with drain electrode, thereby can affect the formation of TFT raceway groove.
Obviously, source electrode is formed at drain electrode the length that is unfavorable for reducing TFT raceway groove on the same layer that metal material is identical, thereby is unfavorable for improving display effect.
Summary of the invention
In view of this, main purpose of the present invention is to provide the manufacture method of a kind of TFT, the manufacture method of display device and display device, display unit, can reduce the length of TFT raceway groove and can not affect the formation of TFT raceway groove, and then improve display effect.
For achieving the above object, technical scheme of the present invention is achieved in that
A manufacture method for Thin Film Transistor (TFT), comprises step:
Form source layer, source layer is carried out to photoetching and form source electrode; And
Deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode;
Or,
Form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And
Deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
A manufacture method for display device, this display device comprises Thin Film Transistor (TFT), this manufacture method comprises step:
Form source layer, source layer is carried out to photoetching and form source electrode; And
Deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode;
Or,
Form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And
Deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
Described drain electrode layer is transparent, drain electrode layer is being carried out to when photoetching forms drain electrode forming pixel electrode.
The material of described drain electrode layer is ITO.
Comprise step:
On substrate, form gate pattern and the gate insulation layer that comprises grid;
On described gate insulation layer, form active layer;
Deposition source layer, carries out photoetching to source layer and forms the source electrode pattern that comprises source electrode and data wire;
Form passivation layer pattern, expose drain locations;
Carry out described deposition drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode and pixel electrode.
, by above-mentioned method, made.
, comprising substrate and Thin Film Transistor (TFT), the material of described source electrode is different with the material of drain electrode.
This display device also comprises pixel electrode, and described pixel electrode and described drain electrode are formed by same layer material.
The material of described pixel electrode and described drain electrode is ITO.
, the display device in this display unit is made by above-mentioned method.
The manufacture method of TFT of the present invention, display device and display device, display unit, because source electrode is formed at different layers and both materials are different with drain electrode, therefore, can when the photoetching completing below, use source electrode (or drain electrode) processing conditions that structure influence is little to first completing photoetching, comprise different etching materials and temperature etc., thereby can in different process step, complete etching, so, the length of TFT raceway groove just can be set flexibly; Further, just can not be too small because of the length of TFT raceway groove, photoresist is residued in raceway groove, and then can not affect the formation of TFT raceway groove; That is to say, the present invention can reduce the length of TFT raceway groove under the prerequisite that does not affect the formation of TFT raceway groove as far as possible, and then improves display effect.
Accompanying drawing explanation
Fig. 1 is the manufacture method schematic flow sheet of a kind of Thin Film Transistor (TFT) of the embodiment of the present invention;
Fig. 2 is the manufacture method schematic flow sheet of a kind of Thin Film Transistor (TFT) of another embodiment of the present invention;
Fig. 3 is the structural representation of pixel in the display device forming according to said method;
Fig. 4 is the structural representation of pixel in prior art display device;
Fig. 5 is the detailed process schematic diagram of the manufacture method of a kind of display device of the embodiment of the present invention;
Fig. 6 for forming and comprise the gate pattern 7 of grid and the schematic diagram of gate insulation layer 8 on substrate 6;
Fig. 7 for forming the schematic diagram of active layer 9 on described gate insulation layer 8;
Fig. 8, for deposition source layer 10, carries out to source layer 10 schematic diagram that photoetching forms the source electrode pattern that comprises source electrode and data wire;
Fig. 9, for forming passivation layer pattern 11, exposes the schematic diagram of drain locations;
Figure 10, for deposition drain electrode layer 12, carries out to drain electrode layer 12 schematic diagram that photoetching forms drain electrode and pixel electrode.
Description of reference numerals:
1, gate metal; 2, pixel electrode; 3, data wire; 4, active layer; 5, passivation layer;
6, substrate; 7, gate pattern; 8, gate insulation layer; 9, active layer; 10, source layer;
11, passivation layer pattern; 12, drain electrode layer.
Embodiment
Basic thought of the present invention is: form source layer, source layer is carried out to photoetching and form source electrode; And deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode; Or, form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
Fig. 1 is the manufacture method schematic flow sheet of a kind of Thin Film Transistor (TFT) of the embodiment of the present invention, and as shown in Figure 1, the method comprising the steps of:
Step 101: form source layer, source layer is carried out to photoetching and form source electrode;
Step 102: deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode.
Fig. 2 is the manufacture method schematic flow sheet of a kind of Thin Film Transistor (TFT) of another embodiment of the present invention, and as shown in Figure 2, the method comprising the steps of:
Step 201: form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode;
Step 202: deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
The present invention has also correspondingly proposed a kind of manufacture method of display device, and this display device comprises Thin Film Transistor (TFT), and this manufacture method comprises step:
Form source layer, source layer is carried out to photoetching and form source electrode; And
Deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode;
Or,
Form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And
Deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
Fig. 3 is the structural representation of pixel in the display device forming according to said method, in Fig. 3, and 1 indication gate metal, 2 indication pixel electrodes, 3 designation data lines, 4 indication active layers.Figure 4 shows that the structural representation of pixel in the display device forming according to correlation technique, in Fig. 4,1 indication gate metal, 2 indication pixel electrodes, 3 designation data lines, 4 indication active layers, 5 is passivation layer.In Fig. 3, source electrode is formed at the different different layers of metal material with drain electrode, and in Fig. 4, source electrode is formed on the same layer that metal material is identical with drain electrode, therefore, the present invention can reduce the length (length of TFT raceway groove is L as shown in Figure 3) of TFT raceway groove and can not affect the formation of TFT raceway groove than correlation technique, and then improves display effect.
Optionally, described drain electrode layer is transparent, drain electrode layer is being carried out to when photoetching forms drain electrode forming pixel electrode.
Optionally, the material of described drain electrode layer is ITO.
Fig. 5 is the detailed process schematic diagram of the manufacture method of a kind of display device of the embodiment of the present invention, and as shown in Figure 5, the method comprising the steps of:
Step 501: form gate pattern 7 and the gate insulation layer 8 that comprises grid on substrate 6;
On substrate 6, form and comprise that the gate pattern 7 of grid and the schematic diagram of gate insulation layer 8 are referring to Fig. 6.
Step 502: form active layer 9 on described gate insulation layer 8;
The schematic diagram that forms active layer 9 on described gate insulation layer 8 is referring to Fig. 7.
Step 503: deposition source layer 10, carries out photoetching to source layer 10 and forms the source electrode pattern that comprises source electrode and data wire;
Step 504: form passivation layer pattern 11, expose drain locations;
Form passivation layer pattern 11, expose the schematic diagram of drain locations referring to Fig. 9.
Step 505: carry out described deposition drain electrode layer 12, drain electrode layer 12 is carried out to photoetching and form drain electrode and pixel electrode.
Deposition drain electrode layer 12, carries out schematic diagram that photoetching forms drain electrode and pixel electrode referring to Figure 10 to drain electrode layer 12, is also in Fig. 3 the generalized section along A-A ' shown in Figure 10.
The embodiment of the present invention has also correspondingly proposed a kind of display device, and this display device is made by aforementioned display device part manufacture method.
The embodiment of the present invention has also correspondingly proposed a kind of display device, and this display device comprises substrate and Thin Film Transistor (TFT), and the material of described source electrode is different with the material of drain electrode.
Optionally, this display device also comprises pixel electrode, and described pixel electrode and described drain electrode are formed by same layer material, so, described pixel electrode can be made to formation together with described drain electrode, thereby can save processing step.
Optionally, the material of described pixel electrode and described drain electrode is ITO.
The embodiment of the present invention has also correspondingly proposed a kind of display unit, and the display device in this display unit is made by aforementioned display device part manufacture method.
It should be noted that, the display device described in the present invention can be array base palte or AM-OLED etc.
Source electrode of the present invention is formed at different layers with drain electrode and both materials are different, therefore, can when the photoetching completing below, use source electrode (or drain electrode) processing conditions that structure influence is little to first completing photoetching, comprise different etching materials and temperature etc., thereby can in different process step, complete etching, so, just the length of TFT raceway groove can be set flexibly; Further, just can not be too small because of the length of TFT raceway groove, photoresist is residued in raceway groove, and then can not affect the formation of TFT raceway groove; That is to say, the present invention can reduce the length of TFT raceway groove under the prerequisite that does not affect the formation of TFT raceway groove as far as possible, and then improves display effect.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.
Claims (10)
1. a manufacture method for Thin Film Transistor (TFT), is characterized in that, comprises step:
Form source layer, source layer is carried out to photoetching and form source electrode; And
Deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode;
Or,
Form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And
Deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
2. a manufacture method for display device, this display device comprises Thin Film Transistor (TFT), it is characterized in that, this manufacture method comprises step:
Form source layer, source layer is carried out to photoetching and form source electrode; And
Deposition drain electrode layer, the material of this drain electrode layer is different from the material of source layer, drain electrode layer is carried out to photoetching and form drain electrode;
Or,
Form drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode; And
Deposition source layer, the material of this source layer is different from drain electrode layer, source layer is carried out to photoetching and form source electrode.
3. the manufacture method of display device according to claim 2, is characterized in that, described drain electrode layer is transparent, drain electrode layer is being carried out to when photoetching forms drain electrode forming pixel electrode.
4. the manufacture method of display device according to claim 3, is characterized in that, the material of described drain electrode layer is ITO.
5. the manufacture method of display device according to claim 3, is characterized in that, comprises step:
On substrate, form gate pattern and the gate insulation layer that comprises grid;
On described gate insulation layer, form active layer;
Deposition source layer, carries out photoetching to source layer and forms the source electrode pattern that comprises source electrode and data wire;
Form passivation layer pattern, expose drain locations;
Carry out described deposition drain electrode layer, drain electrode layer is carried out to photoetching and form drain electrode and pixel electrode.
6. a display device, is characterized in that, the method in claim 2-5 described in any one is made.
7. a display device, comprises substrate and Thin Film Transistor (TFT), it is characterized in that, the material of described source electrode is different with the material of drain electrode.
8. according to claim 7 display device, it is characterized in that, also comprise pixel electrode, described pixel electrode and described drain electrode are formed by same layer material.
9. display device according to Claim 8, is characterized in that, the material of described pixel electrode and described drain electrode is ITO.
10. a display unit, is characterized in that, the method described in any one in claim 2-5 of the display device in this display unit is made.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210258621.0A CN103578990A (en) | 2012-07-24 | 2012-07-24 | TFT manufacturing method, displaying component manufacturing method, displaying component and displaying device |
| PCT/CN2012/086613 WO2014015626A1 (en) | 2012-07-24 | 2012-12-14 | Methods for manufacturing tft and display device, display device, and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210258621.0A CN103578990A (en) | 2012-07-24 | 2012-07-24 | TFT manufacturing method, displaying component manufacturing method, displaying component and displaying device |
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| CN103578990A true CN103578990A (en) | 2014-02-12 |
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| CN201210258621.0A Pending CN103578990A (en) | 2012-07-24 | 2012-07-24 | TFT manufacturing method, displaying component manufacturing method, displaying component and displaying device |
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| WO (1) | WO2014015626A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409347A (en) * | 2014-10-28 | 2015-03-11 | 重庆京东方光电科技有限公司 | Preparation method of thin-film transistor and preparation method of array substrate |
| CN107490917A (en) * | 2017-09-27 | 2017-12-19 | 武汉华星光电技术有限公司 | A kind of thin-film transistor array base-plate and display device |
| CN110783204A (en) * | 2019-10-29 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Double-channel three-dimensional TFT device, display panel and manufacturing method thereof |
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| US20040012018A1 (en) * | 2002-07-17 | 2004-01-22 | Pioneer Corporation | Organic semiconductor device |
| JP2006261498A (en) * | 2005-03-18 | 2006-09-28 | Ricoh Co Ltd | Organic thin film transistor, image display comprising it, and process for fabricating organic thin film transistor |
| CN101552277A (en) * | 2008-04-03 | 2009-10-07 | 上海广电Nec液晶显示器有限公司 | Array base plate of thin film transistor and fabrication method thereof |
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| US5990492A (en) * | 1995-05-30 | 1999-11-23 | Samsung Electronics Co., Ltd. | Self-aligned thin-film transistor for a liquid crystal display having source and drain electrodes of different material |
| KR100696469B1 (en) * | 2004-06-08 | 2007-03-19 | 삼성에스디아이 주식회사 | Organic thin film transistor and flat panel display device therewith |
| GB2458483B (en) * | 2008-03-19 | 2012-06-20 | Cambridge Display Tech Ltd | Organic thin film transistor |
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2012
- 2012-07-24 CN CN201210258621.0A patent/CN103578990A/en active Pending
- 2012-12-14 WO PCT/CN2012/086613 patent/WO2014015626A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040012018A1 (en) * | 2002-07-17 | 2004-01-22 | Pioneer Corporation | Organic semiconductor device |
| JP2006261498A (en) * | 2005-03-18 | 2006-09-28 | Ricoh Co Ltd | Organic thin film transistor, image display comprising it, and process for fabricating organic thin film transistor |
| CN101552277A (en) * | 2008-04-03 | 2009-10-07 | 上海广电Nec液晶显示器有限公司 | Array base plate of thin film transistor and fabrication method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409347A (en) * | 2014-10-28 | 2015-03-11 | 重庆京东方光电科技有限公司 | Preparation method of thin-film transistor and preparation method of array substrate |
| CN104409347B (en) * | 2014-10-28 | 2018-04-10 | 重庆京东方光电科技有限公司 | The preparation method of thin film transistor (TFT) and the preparation method of array base palte |
| CN107490917A (en) * | 2017-09-27 | 2017-12-19 | 武汉华星光电技术有限公司 | A kind of thin-film transistor array base-plate and display device |
| WO2019061601A1 (en) * | 2017-09-27 | 2019-04-04 | 武汉华星光电技术有限公司 | Thin film transistor array substrate and display apparatus |
| US10756120B2 (en) | 2017-09-27 | 2020-08-25 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Thin film transistor array substrate and display apparatus |
| CN110783204A (en) * | 2019-10-29 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Double-channel three-dimensional TFT device, display panel and manufacturing method thereof |
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| WO2014015626A1 (en) | 2014-01-30 |
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Application publication date: 20140212 |