CN103557937A - Laser power monitoring assembly, laser emission module with laser power monitoring assembly used and optical amplifier with laser power monitoring assembly used - Google Patents
Laser power monitoring assembly, laser emission module with laser power monitoring assembly used and optical amplifier with laser power monitoring assembly used Download PDFInfo
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- CN103557937A CN103557937A CN201310529395.XA CN201310529395A CN103557937A CN 103557937 A CN103557937 A CN 103557937A CN 201310529395 A CN201310529395 A CN 201310529395A CN 103557937 A CN103557937 A CN 103557937A
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Abstract
The invention provides a laser power monitoring assembly, a laser emission module with the laser power monitoring assembly used and an optical amplifier with the laser power monitoring assembly used. The laser power monitoring assembly comprises a two-dimensional nanowire grating and optical detectors; the two-dimensional nanowire grating has a certain thickness, the front surface of the two-dimensional nanowire grating is provided with a grating structure, lasers income from the front surface of the two-dimensional nanowire grating at the incident angle of alpha in an incidence mode, and under the effect of the grating structure, a part of the incident lasers emits out in the direction deviated from the incident direction through reflection of the two-dimensional metal nanowire grating; the photosensitive surfaces of the optical detectors face the direction of the lasers reflected by the two-dimensional nanowire grating, and the optical detectors are used for detecting the power of the lasers reflected by the two-dimensional nanowire grating and deviated from the incident direction. According to the laser power monitoring assembly, due to the fact that the two-dimensional nanowire grating is added, the incident lasers of preset proportion are led into the side deviated from the incident direction, the optical detector arranged on the side is used for detecting laser power, the power of the entire incident laser can be obtained according to the laser power, both the two-dimensional nanowire grating and the optical detectors cannot block the incident lasers, and layout of the optical detectors is facilitated.
Description
Technical field
The present invention relates to optical technical field, relate in particular to a kind of laser emitting module with power monitoring function.
Background technology
Optical communication technique has become the main pillar of modern communications, plays a part mainstay in modern communications.Meanwhile, optical communication is as an emerging technology progressively moving to maturity, its in recent years swift and violent speed of development be that communication is rarely seen in history.Optical communication is doomed to become the main means of transportation of various information in Future Information society.
The Key Electron Device in optical communication is high-speed light transmitter module (laser instrument) and high-speed light receiver module (photo-detector).For high-speed light transmitter module, conventionally adopt optical power detector to come the front quick response of light signal of detection laser and the variation of utilizing emitted light power and wavelength, to laser work state is adjusted in real time.
In present common laser emitting module, the rear end of optical power detector in Laser emission chip, is unfavorable for that optical power detector electrode draws.For example, in the encapsulation of butterfly shell, in order to draw two electrodes of Laser emission chip rear optical power detector, need to connect the pin on optical power detector electrode and shell by longer spun gold, this has increased operation easier undoubtedly, and longer spun gold reduces the shock resistance of laser emitting module integral body and reliability.
When making SOA (semiconductor optical amplifier) module, incident light is by the incident of SOA chip back, after SOA chip amplifies from chip front side outgoing.At this moment at SOA chip back, place optical power detector and can stop that incident light enters SOA chip, so do not place optical power detector in general SOA module.At light, inject laser emitting module, when injection light is injected by the laser chip back side, also there will be same problem.
Summary of the invention
(1) technical matters that will solve
In view of above-mentioned technical matters, the invention provides a kind of laser power monitor assembly and apply its laser emitting module, semiconductor optical amplifier module.
(2) technical scheme
According to an aspect of the present invention, provide a kind of laser power monitor assembly.This laser power monitor assembly comprises: two-dimensional nano line grating, there is certain thickness, and its front surface has optical grating construction, laser with incident angle α by its front surface incident, under optical grating construction effect, part incident laser, through this two-dimensional metallic nano wire optical grating reflection, departs from incident direction outgoing; And photo-detector, photosurface is towards the laser direction through the reflection of two-dimensional nano line grating, for surveying the power that is departed from incident direction laser by the reflection of two-dimensional nano line grating.
According to another aspect of the present invention, also provide a kind of laser emitting module.This laser emitting module comprises: shell, has a pedestal and at least one signal pin; The Laser emission chip being arranged in order, optoisolator and optical lens array, be welded on pedestal by laser welding technology respectively, for exporting collimated laser beam; Above-mentioned laser power monitor assembly, wherein, two-dimensional nano line grating is aimed at collimated laser beam setting, and it is welded on pedestal by laser welding technology, and photo-detector is near shell setting, and its signal output part is electrically connected to corresponding signal pin on shell.
According to a further aspect of the invention, provide again a kind of conductor image intensifer.This semiconductor optical amplifier comprises: shell, has a pedestal and at least one signal pin; The front end joints of optical fibre that are arranged in order, semiconductor amplification chip, optoisolator and optical lens array, be welded on pedestal by laser welding technology respectively, for exporting collimated laser beam; Above-mentioned laser power monitor assembly, wherein, two-dimensional nano line grating is aimed at collimated laser beam setting, and it is welded on pedestal by laser welding technology, and photo-detector is near shell setting, and its signal output part is electrically connected to corresponding signal pin on shell; The rear end joints of optical fibre, are welded on pedestal by laser welding technology, for drawing this semiconductor optical amplifier by the laser of two-dimensional metallic nano wire grating transmission.
(3) beneficial effect
From technique scheme, can find out, laser power monitor assembly of the present invention and laser emitting module, the image intensifer of applying it have following beneficial effect:
(1) by adding two-dimensional nano line grating, the incident light of preset ratio is introduced to the side of departing from incident direction, by the photo-detector that is positioned over side, detect laser power, by this laser power, can be drawn the power of whole incident light, two-dimensional nano line grating and photo-detector all can not stop incident light, have facilitated the layout of photo-detector;
(2) in the laser emitting module and semiconductor optical amplifier module of this laser power monitor module of application, photo-detector can be placed in the position of more close shell pin, shortened the length that connects the spun gold of photo-detector electrode and pin, thereby operation is more easily simple.
Accompanying drawing explanation
Fig. 1 is according to the schematic diagram of embodiment of the present invention laser power monitor assembly;
Fig. 2 is according to the schematic diagram of embodiment of the present invention laser emitting module;
Fig. 3 is according to the schematic diagram of embodiment of the present invention semiconductor optical amplifier module.
[main element]
1-two-dimensional nano line grating; 2-photo-detector;
The 3-joints of optical fibre; 4-Laser emission chip;
5-optical lens array; 6-optoisolator;
7-shell; 8-pin;
9 spun golds; 10-semiconductor amplification chip;
The 11-front end joints of optical fibre; The 12-rear end joints of optical fibre.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.It should be noted that, in accompanying drawing or instructions description, similar or identical part is all used identical figure number.The implementation that does not illustrate in accompanying drawing or describe is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.The direction term of mentioning in embodiment, such as " on ", D score, 'fornt', 'back', " left side ", " right side " etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is to be not used for limiting the scope of the invention for explanation.
The laser emitting module of power monitoring function of the present invention is by adding two-dimensional nano line grating, the incident light of preset ratio is introduced to the side of departing from incident direction, by the photo-detector that is positioned over side, detect laser power, two-dimensional nano line grating and photo-detector all can not stop incident light, have facilitated the layout of photo-detector.
In one exemplary embodiment of the present invention, provide a kind of laser power monitor assembly.Fig. 1 is the schematic diagram of embodiment of the present invention laser power monitor assembly.Please refer to Fig. 1, this laser power monitor assembly comprises: two-dimensional nano line grating 1, there is certain thickness, and its front surface has optical grating construction, and incident laser is by its grating face incident, and angle of incidence of light is α.Part incident light, through the reflection of grating, departs from the outgoing of the incident light direction of propagation.Photo-detector 2, its photosurface is facing to the radiation direction through 1 reflection of two-dimensional nano line grating, for surveying the power that is departed from incident direction laser far away by 1 reflection of two-dimensional nano line grating.
In the present embodiment, two-dimensional nano line grating 1 is substrate for using polyethylene terephthalate (PET), and metallic aluminium is grating material, use photoetching process to make, but the present invention is not as limit.Those skilled in the art also can use other materials and methods to produce the two-dimensional nano line grating of similar functions, are not limited to material and the technique of in the present invention, giving an example.For example this substrate can also be BK7 glass, and grating material can also be the metal materials such as indium, gold or liquid crystal material.
In the present embodiment, the thickness of this two-dimensional nano line grating 1 is 1mm.The slit separation of optical grating construction is in 150nm left and right, and slit width is consistent with slit separation, the about 80nm of grating thickness, and the laser effect that now minute light action of grating is 500nm～800nm to wavelength is remarkable.But the present invention is not as limit.Wherein, the thickness of this two-dimensional nano line grating can be between between 0.5mm to 5mm, and the slit width of optical grating construction and spacing can be wider, and between 100nm～500nm, grating thickness is between 60nm～100nm.By slit width, spacing and the grating thickness of suitable adjusting two-dimensional nano line grating 1, can change transmissivity and the reflectivity of incident light.General, slit width, spacing are larger, and grating thickness is approximately little, and now the transmissivity of two-dimensional nano line grating 1 is higher, reflectivity is lower.Those skilled in the art, for selecting suitable going out luminous power or detect luminous power, can suitably adjust slit width, spacing and the grating thickness of two-dimensional nano line grating 1 when making grating.
In the present embodiment, two-dimensional nano line grating 1 is 10 ° with the angle of light α that incident laser forms, but the present invention is as limit, and this incident angle α can select between 0 ° and 50 °.Select different incident angles, the transmissivity of laser, the light intensity by the Ear Mucosa Treated by He Ne Laser Irradiation of two-dimensional nano line grating 1 reflection on photo-detector 2 also can be different, incident angle α and the two have stricter corresponding relation, angle of light α is larger, and the light intensity by the Ear Mucosa Treated by He Ne Laser Irradiation of two-dimensional nano line grating 1 reflection on photo-detector 2 is less.Those skilled in the art, for selecting suitable going out luminous power or monitor luminous power, can adjust the size of incident angle α.
In the present embodiment, the photo-detector adopting is photodiode (PIN) or avalanche optoelectronic pipe (APD), but the present invention is not as limit, and those skilled in the art can select the photo-detector of suitable measurement range and precision as required, repeat no more herein.
In another embodiment of the present invention, also provide a kind of laser emitting module of applying above-mentioned laser power monitor assembly.Fig. 2 is according to the schematic diagram of embodiment of the present invention laser emitting module.Please refer to Fig. 2, this laser emitting module comprises: shell 7, has a pedestal and at least one signal pin; The Laser emission chip 4 being arranged in order, optoisolator 6 and optical lens array 5, be welded on the pedestal of shell 7 by laser welding technology respectively, for exporting collimated laser beam; Laser power monitor assembly, wherein, two-dimensional nano line grating 1 is aimed at collimated laser beam setting, and it is welded on the pedestal of shell by laser welding technology, photo-detector 2 is near shell setting, and its signal output part is electrically connected on shell 7 on corresponding pin 8 by spun gold 9.
In the present embodiment, laser, by 4 transmittings of Laser emission chip, through isolator 2 and optical lens array 5, is radiated on two-dimensional nano line grating 1.Due to the characteristic of two-dimensional nano line grating 1 self, certain proportion light transmissive, enters the joints of optical fibre 3, after the long Distance Transmission of optical fiber, enters detector; A certain proportion of light, from two-dimensional nano line grating 1 surface reflection, is radiated on the photosurface of optical power detector 2 in addition, produces photocurrent, by laser emitting module shell pin 8, can measure photocurrent size.
In another exemplary embodiment of the present invention, also provide a kind of semiconductor optical amplifier (Semiconductor Optical Amplifier, SOA) module of applying above-mentioned laser power monitor assembly.Fig. 3 is according to the schematic diagram of embodiment of the present invention semiconductor optical amplifier module.Please refer to Fig. 3, the present embodiment semiconductor optical amplifier module comprises: shell 7, has a pedestal and at least one signal pin; The front end joints of optical fibre 11 that are arranged in order, semiconductor amplification chip 10, optoisolator 6 and optical lens array 5, be welded on the pedestal of described shell 7 by laser welding technology respectively, for exporting collimated laser beam; Laser power monitor assembly, wherein, two-dimensional nano line grating 1 is aimed at collimated laser beam setting, and it is welded on the pedestal of described shell by laser welding technology, photo-detector 2 is near shell setting, and its signal output part is electrically connected on shell 7 on corresponding pin 8 by spun gold 9; The rear end joints of optical fibre 12, are welded on by laser welding technology on the pedestal of described shell 7, for drawing this semiconductor optical amplifier by the laser of two-dimensional nano line grating 1 transmission.
In the present embodiment, laser is entered by the left side joints of optical fibre 11, is radiated on the photosurface of optical semiconductor amplification chip 10, and the laser through amplifying successively transmission, by isolator 6 and optical lens array 5, is radiated on two-dimensional nano line grating 1.Due to the characteristic of two-dimensional nano line grating 1 self, certain proportion light transmissive, enters the joints of optical fibre 12, after the long Distance Transmission of optical fiber, enters detector; A certain proportion of light, by 1 reflection of two-dimensional nano line grating, is radiated on the photosurface of photo-detector 2 in addition, produces photocurrent, by laser emitting module shell pin 8, can measure photocurrent size.
As everyone knows, in SOA module, emergent light power and wavelength monitoring are also very important.The SOA module of application the present embodiment, can detect by photo-detector the variation of outgoing light intensity and wavelength, thereby adjust in time incident laser intensity and wavelength.
So far, by reference to the accompanying drawings the present invention three embodiment be have been described in detail.According to above, describe, those skilled in the art should have clearly understanding to laser power monitor assembly of the present invention and laser emitting module, the image intensifer of applying it.
In addition, the above-mentioned definition to each element and method is not limited in various concrete structures, shape or the mode of mentioning in embodiment, and those of ordinary skill in the art can know simply and replace it, for example:
(1) not necessarily 14pin butterfly (Butterfly) encapsulation of standard of laser emitting module, can be also that a side is high-speed radio-frequency interface, and opposite side is half butterfly encapsulation of pin pattern, can be even the butterfly encapsulation of three side pin patterns;
(2) the present invention also can be applicable to other and is similar to the laser module that SOA module adopts light injection way, for example, have wavelength locking Fabry one Perot (Fabry-Perot, the FP) laser instrument of one-sided light injection etc.
In sum, laser power monitor assembly of the present invention and laser emitting module, the semiconductor optical amplifier module of applying it provide a kind of novel power monitoring mode, by adding a two-dimensional nano line grating, make photo-detector can be placed in the position of more close laser emitting module shell pin, shortened the length that connects the spun gold of photo-detector electrode and pin, thereby operation is more easily simple, and can solve the problem such as photo-detector layout difficulty in SOA module and light injection module.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a laser power monitor assembly, is characterized in that, comprising:
Two-dimensional nano line grating, has certain thickness, and its front surface has optical grating construction, and laser is with incident angle α by its front surface incident, and under described optical grating construction effect, part incident laser, through this two-dimensional metallic nano wire optical grating reflection, departs from incident direction outgoing; And
Photo-detector, photosurface is towards the laser direction through described two-dimensional nano line grating reflection, for surveying the power that is departed from incident direction laser by described two-dimensional nano line grating reflection.
2. laser power monitor assembly according to claim 1, is characterized in that, the thickness of described two-dimensional nano line grating is between 0.5mm～5mm.
3. laser power monitor assembly according to claim 2, is characterized in that, in described optical grating construction, slit width and slit separation are all between 100nm～500nm, and grating thickness is between 60nm～100nm.
4. laser power monitor assembly according to claim 3, is characterized in that, the thickness of described nano wire grating is 1mm;
The slit separation of described optical grating construction is 140nm, and slit width is 150nm, and thickness is 80nm.
5. laser power monitor assembly according to claim 1, is characterized in that, described incident angle α is between 0 ° and 50 °.
6. laser power monitor assembly according to claim 5, is characterized in that, described incident angle α is 10 °.
7. according to the laser power monitor assembly described in any one in claim 1 to 6, it is characterized in that, in described two-dimensional nano line grating, the material of nanostructured is metal material or liquid crystal material.
8. according to the laser power monitor assembly described in any one in claim to 7, it is characterized in that:
Described photo-detector is photodiode or avalanche optoelectronic pipe;
The material of the optical grating construction of described two-dimensional nano line grating is aluminium, indium or gold;
The backing material of described two-dimensional nano line grating is polyethylene terephthalate or BK7 glass.
9. a laser emitting module, is characterized in that, comprising:
Shell, has a pedestal and at least one signal pin;
The Laser emission chip being arranged in order, optoisolator and optical lens array, be welded on described pedestal by laser welding technology respectively, for exporting collimated laser beam;
Laser power monitor assembly in claim 1 to 8 described in any one, wherein, described two-dimensional nano line grating is aimed at described collimated laser beam setting, it is welded on described pedestal by laser welding technology, described photo-detector is near described shell setting, and its signal output part is electrically connected to corresponding signal pin on described shell.
10. a semiconductor optical amplifier, is characterized in that, comprising:
Shell, has a pedestal and at least one signal pin;
The front end joints of optical fibre that are arranged in order, semiconductor amplification chip, optoisolator and optical lens array, be welded on described pedestal by laser welding technology respectively, for exporting collimated laser beam;
Laser power monitor assembly in claim 1 to 8 described in any one, wherein, described two-dimensional nano line grating is aimed at described collimated laser beam setting, it is welded on described pedestal by laser welding technology, described photo-detector is near described shell setting, and its signal output part is electrically connected to corresponding signal pin on described shell;
The rear end joints of optical fibre, are welded on described pedestal by laser welding technology, for drawing this semiconductor optical amplifier by the laser of described two-dimensional metallic nano wire grating transmission.
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| CN201310529395.XA CN103557937A (en) | 2013-10-31 | 2013-10-31 | Laser power monitoring assembly, laser emission module with laser power monitoring assembly used and optical amplifier with laser power monitoring assembly used |
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| CN201310529395.XA CN103557937A (en) | 2013-10-31 | 2013-10-31 | Laser power monitoring assembly, laser emission module with laser power monitoring assembly used and optical amplifier with laser power monitoring assembly used |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017219252A1 (en) * | 2016-06-21 | 2017-12-28 | 华为技术有限公司 | Laser emission assembly and passive optical network system |
| CN110057446A (en) * | 2019-03-21 | 2019-07-26 | 天津大学 | A kind of light power meter with wide spectral range and machine with wide range |
| CN110518972A (en) * | 2018-05-22 | 2019-11-29 | 福州高意光学有限公司 | A kind of optical fiber power monitoring of structures |
| CN112097900A (en) * | 2020-11-10 | 2020-12-18 | 中国工程物理研究院激光聚变研究中心 | High-energy laser beam quality testing method and system |
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| CN101515045A (en) * | 2009-04-02 | 2009-08-26 | 重庆文理学院 | Sub-wavelength metal polarization beam splitting grating for 1550 nanometer waveband |
| CN102064460A (en) * | 2010-10-14 | 2011-05-18 | 清华大学 | Method for measuring and controlling power of frequency double laser in laser heat treatment |
| US20110182305A1 (en) * | 2009-08-06 | 2011-07-28 | Emcore Corporation | Small Packaged Tunable Laser with Beam Splitter |
| CN102474067A (en) * | 2010-05-07 | 2012-05-23 | 古河电气工业株式会社 | Laser module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101515045A (en) * | 2009-04-02 | 2009-08-26 | 重庆文理学院 | Sub-wavelength metal polarization beam splitting grating for 1550 nanometer waveband |
| US20110182305A1 (en) * | 2009-08-06 | 2011-07-28 | Emcore Corporation | Small Packaged Tunable Laser with Beam Splitter |
| CN102474067A (en) * | 2010-05-07 | 2012-05-23 | 古河电气工业株式会社 | Laser module |
| CN102064460A (en) * | 2010-10-14 | 2011-05-18 | 清华大学 | Method for measuring and controlling power of frequency double laser in laser heat treatment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017219252A1 (en) * | 2016-06-21 | 2017-12-28 | 华为技术有限公司 | Laser emission assembly and passive optical network system |
| CN110518972A (en) * | 2018-05-22 | 2019-11-29 | 福州高意光学有限公司 | A kind of optical fiber power monitoring of structures |
| CN110057446A (en) * | 2019-03-21 | 2019-07-26 | 天津大学 | A kind of light power meter with wide spectral range and machine with wide range |
| CN112097900A (en) * | 2020-11-10 | 2020-12-18 | 中国工程物理研究院激光聚变研究中心 | High-energy laser beam quality testing method and system |
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Application publication date: 20140205 |