CN103515455A - A thin-film solar energy cell and a manufacturing method thereof - Google Patents
A thin-film solar energy cell and a manufacturing method thereof Download PDFInfo
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- CN103515455A CN103515455A CN201210201719.2A CN201210201719A CN103515455A CN 103515455 A CN103515455 A CN 103515455A CN 201210201719 A CN201210201719 A CN 201210201719A CN 103515455 A CN103515455 A CN 103515455A
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- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010408 film Substances 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 21
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 21
- 239000002238 carbon nanotube film Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003708 ampul Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001535 kindling effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a thin-film solar energy cell comprising a silicon thin-film solar energy cell panel, a surface plasma excimer film and an aligned carbon nanotube thin-film. The silicon thin-film solar energy cell panel is arranged be a lowest layer. The aligned carbon nanotube thin-film is arranged be a highest layer. The surface plasma excimer film is positioned between the silicon thin-film solar energy cell panel and the carbon nanotube thin-film. The aligned carbon nanotube thin-film comprises a carbon nanotube which grows vertically. The carbon nanotube is used for absorbing all incident lights to enable the incident lights to reach the surface plasma excimer film. The surface plasma excimer film is used for the combination with the aligned carbon nanotube thin-film and the silicon thin-film solar energy cell panel. At the same time, the invention discloses a manufacturing method for the thin-film solar energy cell. Through the adoption of the thin-film solar energy cell and the manufacturing method thereof of the invention, light reflections due to changes of illumination angles can be reduced, so that solar energy losses can be further reduced and the photoelectric conversion efficiency can be raised.
Description
Technical field
The present invention relates to light energy battery technology, relate in particular to a kind of film light energy battery and preparation method thereof.
Background technology
Light energy battery is as substrate with silicon materials, utilize photoelectric effect to realize luminous energy to a kind of battery of the conversion of electric energy, this green energy resource is widely used in illumination, mobile communication equipment, space technology etc., to the research of light energy battery, is the important exploration to novel energy.
At present, in energy field, the research of researcher to light energy battery, is mainly that silicon materials are optimized; Or other element is mixed in silicon materials, form new compound and attempt improving photoelectric conversion efficiency.About the actual efficiency of silica-based light energy battery, it is generally acknowledged the battery power reaching and the ratio that acts on the sunlight power of battery surface, a large amount of theories is calculated proof, the material that is Eg=1.1ev for energy gap, its efficiency is 25%.So, for silica-based light energy battery, if be only limited to research silicon materials, be to be difficult to break through this efficiency; And research direction diversity is larger, groping the suitable material of middle searching, there is certain uncertain factor, need to study from another direction, to improve photoelectric conversion efficiency.
In addition, people adopt matte film and efficient back reflection layer to carry out the absorption efficiency of enhanced film light energy battery conventionally, like this, can play a role.But researcher finds again metal nanoparticle excitating surface plasma excimer recently, can strengthen the light absorption of silicon thin film light energy battery, therefore, the Physical Mechanism of this effect is done to positive research.
Yet, for light energy battery, due to the light angle at sunshine be along with the earth certainly then change, so, when light energy battery absorbs sunlight every day is different, all irradiate from different perspectives.In the time of light vertical irradiation, there is no reflection ray, thereby can all absorb solar energy; But in the time of light oblique incidence, will along with reflection, lose by some energy, in this case, single from the viewpoint of improving silicon materials, cannot retrieve this part energy; Or adopt matte and back reflection layer, effect is also faint.This is the defect of light energy battery on reception luminous energy, need to consider by another thinking, prevents the loss of this part energy.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of film light energy battery and preparation method thereof, can reduce because lighting angle changes the light reflection causing, and then reduce luminous energy loss, improves photoelectric conversion efficiency.
For achieving the above object, technical scheme of the present invention is achieved in that
The invention provides a kind of film light energy battery, described battery comprises: silicon thin film light energy battery plate, surface plasmons film, aligned carbon nanotube film;
Described silicon thin film light energy battery plate is positioned at the bottom, and described aligned carbon nanotube film is positioned at top layer, and described surface plasmons film is between silicon thin film light energy battery plate and aligned carbon nanotube film;
Described aligned carbon nanotube film, comprises orthotropic carbon nano-tube, for absorbing whole incident lights, makes incident light arrive surface plasmons film;
Described surface plasmons film, in conjunction with aligned carbon nanotube film and silicon thin film light energy battery plate.
The present invention also provides a kind of preparation method of film light energy battery, and the method comprises:
Growing oriented carbon nano-tube film on surface plasmons film;
There is the surface plasmons film of aligned carbon nanotube film to be plated on silicon thin film light energy battery plate growth.
In such scheme, the method growing oriented carbon nano-tube film on surface plasmons film that adopts hydrocarbon oxidation catalyst to decompose.
In such scheme, described in be plated to as electroplating.
Film light energy battery provided by the present invention and preparation method thereof, increases one deck aligned carbon nanotube film on silicon thin film light energy battery plate surface, and with surface plasmons film the binder course as aligned carbon nanotube film and silicon thin film light energy battery plate; And the carbon nano-tube vertical-growth in aligned carbon nanotube film; So, the space forming between carbon nano-tube, can make light therein after multiple reflections until film is inner, cannot overflow, make aligned carbon nanotube film have stronger absorption to sunlight.The present invention, by changing the superficial film structure of light energy battery, has solved the problem that improves light energy use efficiency from another angle, solved the variation of light energy battery due to angle of incident light, the problem of the caused reverberation loss of energy.
Accompanying drawing explanation
Fig. 1 is the composition structural representation of film light energy battery of the present invention;
Fig. 2 is the round spot schematic diagram of the green light source vertical irradiation of 532nm;
Fig. 3 is the oval spot schematic diagram of the maximum irradiation angular illumination of light on light energy battery plate;
Fig. 4 is the open circuit voltage comparison diagram of film light energy battery of the present invention and common light energy battery.
Embodiment
Basic ideas of the present invention are: on silicon thin film light energy battery plate surface, increase the aligned carbon nanotube (CNT that one deck consists of orthotropic carbon nano-tube, Carbon Nano Tube) film, and the binder course with surface plasmons (SPP, Surface Plasmon Polariton) film as aligned carbon nanotube film and silicon thin film light energy battery plate.
Wherein, orthotropic carbon nano-tube can reduce the reverberation loss of different angles incident light; Described surface plasmons film can guarantee that luminous energy is transferred on silicon thin film light energy battery plate well.
Film light energy battery provided by the invention, as shown in Figure 1, comprising: silicon thin film light energy battery plate, surface plasmons film, aligned carbon nanotube film; Silicon thin film light energy battery plate is positioned at the bottom, aligned carbon nanotube film is positioned at top layer, surface plasmons film is between silicon thin film light energy battery plate and aligned carbon nanotube film, as the binder course of aligned carbon nanotube film and silicon thin film light energy battery plate.Wherein,
Described aligned carbon nanotube film, comprises orthotropic carbon nano-tube, for absorbing whole incident lights, makes incident light arrive surface plasmons film;
Described surface plasmons film, in conjunction with aligned carbon nanotube film and silicon thin film light energy battery plate.
In actual applications, light incides aligned carbon nanotube film from some angles, because the carbon nano-tube in aligned carbon nanotube film is arranged perpendicular to surface plasmons film and silicon thin film light energy battery plate, therefore, between carbon nano-tube, form long and narrow space, size is just in time corresponding to the wave-length coverage of visible ray.Like this, when incident light arrives aligned carbon nanotube film surface, these little spaces are as numerous trap, make light therein after multiple reflections until film is inner, cannot overflow, make this aligned carbon nanotube film have stronger absorption to sunlight, almost can reach the effect of " zero " reflection.Then, incident light is through surface plasmons film, and surface plasmons film has transmission enhancement effect, can make incident light be transferred to well on silicon thin film light energy battery plate, produces photovoltaic effect.
Film light energy battery shown in corresponding diagram 1, the present invention also provides the preparation method of film light energy battery, specifically comprises the steps:
Step 10, on surface plasmons film growing oriented carbon nano-tube film.
Here, the described method that growing oriented carbon nano-tube film can adopt hydrocarbon oxidation catalyst to decompose on surface plasmons film; Described surface plasmons film can adopt existing surface plasmons film.
Wherein, the carbon nano-tube vertical-growth in aligned carbon nanotube film.
For concreteness, with ferrocene Fe (C
5h
5)
2for catalyst, acetylene is carbon source, and nitrogen is carrier gas, and the amount of catalyst and the flow-rate ratio of carbon source are 1g: 100mL/min left and right; The flow-rate ratio of carrier gas and carbon source is N
2: C
2h
2=2: 1 to 4: 1, the total flow of gas was no more than 300mL/min;
Using existing surface plasmons film as substrate, put into the horizontal cylinder reacting furnace of many warm areas, quartz ampoule is as reative cell, at two mouths of pipe of reacting furnace, is ready to respectively nitrogen (carrier gas) and acetylene (carbon source);
Kindling temperature, when reaction temperature is 700～800 ℃, puts into nitrogen and acetylene, and the flow of nitrogen is 100～300mL/min, and the flow of acetylene is 40～100mL/min;
The tissue topography of aligned carbon nanotube film can use scanning electron microscopic observation analysis, when seeing that the rete of growth forms vertical column, and the carbon source of first decorporating, then move back carrier gas, start cooling; Be down to normal temperature, take out the surface plasmons film of the aligned carbon nanotube film of having grown.
Wherein, described in, be plated to and can adopt electric plating method.
Accompanying drawing and data below in conjunction with specific embodiment describe the effect that adopts film light energy battery provided by the invention to reach in detail.
After adopting the film luminous energy battery sample of surface plasmons film and aligned carbon nanotube film structure prepare, this film light energy battery and common silicon thin film light energy battery are done to test contrasting.Wherein, experimental situation is: use two of green (light) laser, monocrystalline silicon light energy batteries, universal instrument that power supply source of stable pressure, wavelength are 532nm; Wherein, described two monocrystalline silicon light energy batteries, one is monocrystalline silicon thin film light energy battery prepared by the present invention, and another piece is common monocrystalline silicon light energy battery, there is no surface plasmons film and aligned carbon nanotube film structure, and other parameter is all the same.Further, in order to get rid of incident light, be subject to the interference of other light sources, be chosen in and test evening, like this, can obtain the irradiation of unique light source (green (light) laser), when light source changes irradiating angle, can effectively record light energy battery correlation values.
First, connect the power supply of green (light) laser, using 532nm green (light) laser as unique light source, because the directivity of laser is very strong, can clearly observe and measure the impact of Angulation changes on light energy battery.Input stable alternating voltage 3V, can prepare the film luminous energy battery sample with aligned carbon nanotube film is the rectangle of long 9cm, wide 3cm, according to the irradiance of film light energy battery, to be irradiated to as much as possible film luminous energy battery surface, be exactly to be specifically radiated on aligned carbon nanotube film, can inspire more photoelectron like this, obtain more energy.
Secondly, change angle and carry out experiment measuring, because green (light) laser is the light source of point-like, so vertical irradiation is a circle spot, as shown in Figure 2, the area of the film luminous energy battery surface that projects is h=3cm, the round spot of R=3cm, film luminous energy battery surface can not be irradiated to as far as possible in large area, the energy producing can not be maximum, and its conversion efficiency also can be lower.Through calculating, the optimal corner of light incident is 38 °, as shown in Figure 3, light source goes down according to 38 ° of irradiations of optimal corner, be a h=3cm, the oval-shaped spot of R=9cm, when guaranteeing the length-width ratio of film light energy battery, also be irradiated on film luminous energy battery surface the energy of light source is as much as possible, to make up vertical irradiation, cannot have the defect of maximum irradiance.
When hot spot vertical irradiation is during at two monocrystalline silicon light energy batteries, neither can reflect and energy loss because producing, but in the situation of oblique incidence, common light energy battery can be because reflection, portion of energy can not be absorbed by light energy battery effectively, but film light energy battery of the present invention is owing to there being the existence of aligned carbon nanotube film layer, so can solve well the problem of reflection loss.
Using film light energy battery of the present invention as test sample book, find not have reflex to occur; The technical characteristic of vertical-growth carbon nano-tube, can make the energy of light source all by light energy battery, be absorbed.Fig. 4 is one group of open circuit voltage experimental data comparison diagram of measuring, and wherein, X-axis is that irradiating angle represents with w, and Y-axis is open circuit voltage U
oCrepresent, unit is: V.
As shown in Figure 4, wherein, the curve that the open circuit voltage that broken line 501 is film light energy battery of the present invention changes along with angle, the curve that the open circuit voltage that broken line 502 is common light energy battery changes along with angle.Originally experiment measures from vertical incidence, can obviously find out, in the situation that being all 90 °, open circuit voltage is all U
oc=3.775v, when having angle to change, until 38 ° of optimal corner, the open circuit voltage of common light energy battery is along with angle changes in continuous increase, this be because, although there has been slight reflex to exist, have sub-fraction energy loss, but the silicon plate area irradiating also increasing simultaneously, the photoelectron inspiring is more and more, it is the less deal of accounting that the photoelectron that the number of photons of loss obtains with increasing irradiated area is compared, so voltage increases.But since 38 ° of voltage minimizings afterwards, although can keep certain irradiated area, the energy reflecting away is more and more, and the quantity of photon is being successively decreased, so voltage reduces.
From above-mentioned data, the endergonic effect of film light energy battery of the present invention is fine, and along with the change of angle, voltage is the situation keep increasing, until during 38 ° of optimal corner; With common light energy battery comparison, the common light energy battery of voltage ratio of film light energy battery of the present invention is high, the radiation angle from 30 ° to 10 °, and the voltage of film light energy battery of the present invention is saturated stable; Aligned carbon nanotube has all absorbed the energy reflecting away return, and in the process changing, does not lose the energy reflecting away in angle of radiation.By relatively, can find out, the open circuit voltage of film light energy battery of the present invention is improved, and correspondingly, the efficiency of film light energy battery has also improved.
The above, be only preferred embodiment of the present invention, is not intended to limit protection scope of the present invention.
Claims (4)
1. a film light energy battery, is characterized in that, described battery comprises: silicon thin film light energy battery plate, surface plasmons film, aligned carbon nanotube film;
Described silicon thin film light energy battery plate is positioned at the bottom, and described aligned carbon nanotube film is positioned at top layer, and described surface plasmons film is between silicon thin film light energy battery plate and aligned carbon nanotube film;
Described aligned carbon nanotube film, comprises orthotropic carbon nano-tube, for absorbing whole incident lights, makes incident light arrive surface plasmons film;
Described surface plasmons film, in conjunction with aligned carbon nanotube film and silicon thin film light energy battery plate.
2. a preparation method for film light energy battery, is characterized in that, the method comprises:
Growing oriented carbon nano-tube film on surface plasmons film;
There is the surface plasmons film of aligned carbon nanotube film to be plated on silicon thin film light energy battery plate growth.
3. method according to claim 2, is characterized in that, the method growing oriented carbon nano-tube film on surface plasmons film that adopts hydrocarbon oxidation catalyst to decompose.
4. method according to claim 2, is characterized in that, described in be plated to as electroplating.
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Citations (2)
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|---|---|---|---|---|
| US20090308443A1 (en) * | 2008-06-13 | 2009-12-17 | Cutler Paul H | Apparatus and system for a single element solar cell |
| CN101866961A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Light trapping structure for thin film silicon/crystalline silicon heterojunction solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090308443A1 (en) * | 2008-06-13 | 2009-12-17 | Cutler Paul H | Apparatus and system for a single element solar cell |
| CN101866961A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Light trapping structure for thin film silicon/crystalline silicon heterojunction solar battery |
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