CN104310784A - Quantum dot LED light emitting glass and preparation method thereof - Google Patents
Quantum dot LED light emitting glass and preparation method thereof Download PDFInfo
- Publication number
- CN104310784A CN104310784A CN201410553134.6A CN201410553134A CN104310784A CN 104310784 A CN104310784 A CN 104310784A CN 201410553134 A CN201410553134 A CN 201410553134A CN 104310784 A CN104310784 A CN 104310784A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- fluorescent glass
- led fluorescent
- dot led
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
Abstract
The invention provides quantum dot LED light emitting glass which is prepared from a quantum dot material and a silicon-based mesoporous material. The invention further provides a preparation method of the quantum dot LED light emitting glass. The preparation method comprises the following steps: firstly, synthesizing the quantum dot material by using a chemical method; subsequently, making the quantum dot material and the silicon-based mesoporous material into paste, stirring and mixing so as to prepare composite powder, drying in vacuum, curing and sintering the dried composite powder by using a discharge plasma technique, performing furnace cooling to be the room temperature after sintering is completed, grinding and polishing, thereby obtaining the corresponding quantum dot LED light emitting glass, and finally pasting and packaging. A quartz glass substrate material is high in transparency and high in high-temperature resistance, the light emitting stability of quantum dot LEDs can be well maintained, the high-temperature light emitting efficiency of quantum dots is ensured, the components of a glass substrate can be adjusted, the preparation process is simple, and the cost is low, so that the quantum dot LED light emitting glass has good application prospect.
Description
Technical field
The invention belongs to the quantum dot LED fluorescent glass field in forth generation solid state lighting, particularly a kind of quantum dot LED fluorescent glass and preparation method thereof.
Background technology
Quantum dot-photodiode (Quantum Dots Light Emitting Diode, QDs-LED) is applied to the inexorable trend that lighting field is modern development in science and technology.Since 20 end of the centurys, the Application Areas of quantum dot, from field application such as biomarker, laser and solar cells, has been extended to quantum dot lighting field.Fast-developing along with global industry, the energy consumes excessively and the problem such as shortage increasingly serious, and energy-conserving and environment-protective become the world theme that people pay close attention to.It is narrow and do not overlap each other and cause showing great attention to of numerous scientific research personnel with advantages such as the high-luminous-efficiencies of stable point that quantum dot has luminous adjustable, luminous spectrum peak.Itself and photodiode are assembled and prepares quantum dot LED and also become numerous country and to try to be the first the new and high technology developing and study.
At present, the major way obtaining QDs-LED has two kinds: quantum dot is coated on chip (as gallium phosphide purple light chip, InGaN InGaN blue chip etc.) by (1), forms photoluminescence under the excitation of the exciting light of chip; (2) quantum dot is deposited on macromolecule organic material and is prepared into quantum dot film material, adopt galvanic current to form electroluminescent by quantum dot film charging.But this method cannot be formed and continue charging, be naturally also difficult to obtain continuous print electroluminescent, and be easy to the problem causing luminous cancellation.The simplest QDs-LED is a kind of mode before adopting at present.
Although this simply by quantum dot by being directly coated on LED chip than being easier to successfully with viscose material mixing, there is series of problems.As: quantum dot concentration is not high, coating difficulty is larger; And viscose material mainly epoxy resin or the silica gel energy flexible organic material adopted, these materials are exposed to (as high temperature, humidity and strong radiation environment) in harsh environment can shine into serious aging, extreme influence work-ing life of QDs-LED; Simultaneously coating method makes quanta point material and chip be close to, under power light source effect or the use of long-term severe rugged environment can cause the organic materials rapid ageing that protection quantum spot printing covers and then the stability of photoluminescence affecting quantum dot.For the problem of quantum dot high temperature protection material, numerous scientific research personnel has made huge paying for this reason, to improve the high-temperature stability of quantum dot.As: quanta point material is combined with glass material and is prepared into Quantum Dot Glass, make the excellent luminance performance of its highly transparent with glass, high-temperature stability, high thermal conductivity and quantum dot.The people such as Wang Lianjun (publication number: CN 103159407) with mesoporous SBA-15 powder for substrate material sinters out semi-conductor functional glass.The people such as Kai Xu have also also delivered CdSe quantum dot fluorescent glass in the brilliant magazine of solid nano.Succeeding in developing of quantum dot light emitting glass makes the QDs-LED of photoluminescence application shine new life.Quantum Dot Glass and the corresponding chipset that excites are dressed up QDs-LED, real the becoming a reality of the possibility that QDs-LED is thrown light on, also for new basis is established in following more energy-efficient illumination.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of stability of photoluminescence and high-temperature stability is good, and quantum dot LED fluorescent glass of long service life and preparation method thereof.
In order to solve the problems of the technologies described above, technical scheme of the present invention is to provide a kind of quantum dot LED fluorescent glass, it is characterized in that: be made up of quanta point material and silicon-based mesoporous material.
Preferably, described quanta point material adopts chemical process synthesis, and wherein, single semiconductor compound quantum dot is CdS, ZnS, PbS, PbSe, ZnSe, CdSe, CdTe, ZnO, TiO
2in at least one, composite semiconductor quantum dot is at least one in CdSe/ZnS, CdSe/CdS, CdS/ZnS, CdS/PbS, CdSe/ZnSe, PbSe/PbS CdTe/ZnS, CdTeSe.
Preferably, described silicon-based mesoporous material is at least one in mesoporous silicon oxide SBA, mesopore silicon oxide aluminium MCM, mesoporous M41S.
Present invention also offers a kind of preparation method of quantum dot LED fluorescent glass, it is characterized in that: described quantum dot LED fluorescent glass is above-mentioned quantum dot LED fluorescent glass, and the method is made up of following 3 steps:
Step 1: adopt chemical process to synthesize semiconductor-quantum-point;
Step 2: by quantum dot and silicon-based mesoporous powder furnishing pasty state, be uniformly mixed and be prepared into composite granule, and for subsequent use after vacuum-drying; Composite granule dried is before adopted discharge plasma technique solidification sintering, cool to room temperature with the furnace after having sintered, namely obtain corresponding quantum dot LED fluorescent glass through polishing, polishing;
Step 3: adopt paster type encapsulation to be fixed on the LED light source chip of corresponding wavelength the quantum dot LED fluorescent glass obtained, the space silica gel at LED light source chip and quantum dot LED fluorescent glass edge is filled up, make quantum dot LED fluorescent glass and LED light source chip keep at a distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.
Preferably, in described step 1, chemical process comprises: Aqueous phase, oil phase method, single inorganic sources method, ion implantation, ion exchange method, electrochemical process.
Preferably, in described step 2, the time that pasty state composite granule stirs is 5h, and vacuum-drying temperature and time is respectively 80 ~ 100 DEG C and 3h.
Preferably, in described step 2, the processing parameter of solidification sintering is: the temperature of sintering is 900 ~ 1100 DEG C, and temperature rise rate is lower than 200 DEG C/min, and pressure is the high pressure of 50 ~ 100MPa, and soaking time is lower than 5min.
Preferably, in described step 2, the condition of solidification sintering is vacuum.
Preferably, in described step 3, during paster type encapsulation, the size of quantum dot LED fluorescent glass and the light-emitting area of LED light source chip match.
Composite granule is prepared quantum dot LED fluorescent glass by adopting discharge plasma sintering technology after quanta point material and silicon-based mesoporous material compound by the present invention at a lower temperature, makes quantum dot have the protection of high-temperature stable matrix.Meanwhile, adopting the SMD QDs-LED that is packaged into still belong to the first time quantum dot LED fluorescent glass and LED chip, and leave space in the middle of chip and quantum dot light emitting glass, is also the once application of the remote excitation technology of a kind of advanced person.Make the LED light source of point-like originally convert area source to, add luminous homogeneity and reduce dazzle, while increase lighting angle, the quality of light is improved widely.And the heat that Quantum Dot Glass luminescence is formed and the heat that chip is formed can be separated effectively, reduce the temperature of chip assembly, also make light efficiency stability be improved.The paster type encapsulation of this Quantum Dot Glass and advanced remote excitation technology will make the encapsulation of LED bring innovation, also for solid basis is created in the application of the superior QDs-LED of superpower, long lifetime and luminescent properties.
Accompanying drawing explanation
Fig. 1 be embodiment 1 prepare CdS quantum dot, CdS/SBA-15 composite granule, CdS glass XRD figure;
Fig. 2 is the photoluminescence spectra figure of the CdS quantum dot QDs-LED that embodiment 1 encapsulates;
Fig. 3 is the photoelectric properties Parameter Map of the CdS quantum dot QDs-LED that embodiment 1 encapsulates;
Fig. 4 is the TEM figure of PbS quantum glass prepared by embodiment 2;
Fig. 5 is the photoluminescence spectra figure of CdTe quantum prepared by embodiment 3;
Fig. 6 is the photoluminescence spectrogram of CdSe/ZnS core-shell quanta dots glass prepared by embodiment 4.
Embodiment
Quantum dot LED fluorescent glass provided by the invention is made up of the quanta point material of different mass ratio and silicon-based mesoporous material, have the efficient stable luminescent properties of quantum dot excellence, also make its high temperature stability of photoluminescence because of its silica glass substrate material and be all greatly improved and extend.
The preparation method of quantum dot LED fluorescent glass adopts discharge plasma technique fast setting sintering and obtains, and can sinter quantum dot and the solidification of silicon-based mesoporous composite powder material into block quantum dot LED fluorescent glass fast at low ambient temperatures.In whole solidification sintering process, silicon-based mesoporous powder directly caves in without melting and is solidified into glass material, and is kept in glass matrix by quanta point material.This curing process belongs to solid state sintering, and directly apply with viscose material and solidify similar, and low temperature solidification can be good at the characteristic of script keeping quanta point material.Gained quantum dot LED fluorescent glass is with high temperature resistant resistance to deterioration, good (the emmission spectrum of high temperature stability of photoluminescence, colour rendering index, the photoelectric parameters such as colour temperature are all along with the prolongation of duration of service substantially large decay does not occur), preparation technology is simple, and adopt and SMD quantum dot light emitting glass and LED chip be assembled into quantum dot LED.
The present invention, except green light quantum point LED fluorescent glass, can also change different luminous position by selecting different single quantum dots or core-shell quanta dots material by compound, thus obtains white light quanta point LED fluorescent glass.
For making the present invention become apparent, hereby with several preferred embodiment, and accompanying drawing is coordinated to be described in detail below.
Embodiment 1
Synthesis CdS quantum dot, the proportioning being 0.1% ~ 6% according to mass percent takes required CdS quantum dot and SBA-15 powder.With dehydrated alcohol by the two mixing furnishing pasty state adopt magnetic stirrer 5h, then by the mashed prod after stirring after Rotary Evaporators revolves steaming 3 ~ 5 times in the dry 3h of 80 DEG C of vacuum drying ovens.Dry complete CdS-QDs/SBA-15 powder adopts the solidification of the graphite jig of discharge plasma sintering oven to sinter CdS quantum dot glass into.Sintering process is: sintering pressure is 50MPa, and temperature rise rate is 90 DEG C/min, and sintering temperature is 960 DEG C, and soaking time is 3min, has sintered rear closedown instrument power source, has cooled to room temperature with the furnace.Sample obtains CdS quantum dot fluorescent glass through processes such as polishing, polishings after taking out.
Adopt the mode of paster type encapsulation to be fixed on gallium phosphide LED purple light light source chip in the CdS quantum dot glass obtained, the silica gel of chip with the space high thermal conductivity coefficient at Quantum Dot Glass edge is filled up, in order to avoid chip light source spilling.Paster type encapsulation needs adjusting the size of Quantum Dot Glass, makes to guarantee that the size of glass and the light-emitting area of LED light source chip match, and can reduce the consumption of silica gel and guarantee to demonstrate,prove can not overflowing of chip light source.Make Quantum Dot Glass and chip keep certain distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.The CdS quantum dot QDs-LED spectrogram of prepared CdS quantum dot glass XRD analysis result, the CdS quantum dot QDs-LED photoluminescence spectrogram of assembling and assembling respectively as shown in Figure 1, 2, 3.The θ of Fig. 1 is the angle of X-ray diffraction (XRD).As can be seen from XRD in figure, whole treating processes CdS quantum dot remains the structure of hexagonal always.The serious broadening in spectrum peak of CdS quantum dot powder can be found out, show that particle size is very little.Also can find out the CdS quantum dot crossed through SBA-15 Combined Processing and untreated before CdS quantum dot grain-size about the same, show that this treating processes well maintains CdS quantum dot.From figure, it can also be seen that sample also maintains the feature at the steamed bun peak of silica glass while the crystalline structure that well remain CdS quantum dot, show that mesoporous SBA-15 defines glass after the process that SPS puts a plasma technique.Can find out that from the fluorescence spectrum figure of Fig. 2 the photoluminescence spectrum intensity of the CdS quantum dot glass after overcuring sintering is stronger, and the spectrum peak of spectrum very narrow (being less than 25 nanometers), side surface body has revealed CdS quantum dot particle and has distributed very narrow in glass.As can be seen from Figure 3 the CdS quantum dot QDs-LED chromaticity coordinates after assembling is (0.3360,0.3754), and correlated(color)temperature T is 5392K, and colour rendering index Ra is 62.6.Illustrate that the CdS quantum dot glass prepared by spark plasma sintering can be formed good green glow well and export with purple light chip portfolio, and colour temperature is lower.
Embodiment 2
Synthesis PbS quantum, the proportioning being 0.1% ~ 0.6% according to mass percent takes required PbS quantum and SBA-15 powder.With dehydrated alcohol by the two mixing furnishing pasty state adopt magnetic stirrer 5h, then by the mashed prod after stirring after Rotary Evaporators revolves steaming 3 ~ 5 times in the dry 3h of 90 DEG C of vacuum drying ovens.Dry complete PbS-QDs/SBA-15 powder adopts the solidification of the graphite jig of discharge plasma sintering oven to sinter PbS quantum fluorescent glass into.Sintering process is: sintering pressure is 55MPa, and temperature rise rate is 110 DEG C/min, and sintering temperature is 1020 DEG C, and soaking time is 4min, has sintered rear closedown instrument power source, has cooled to room temperature with the furnace.Sample obtains PbS quantum fluorescent glass through processes such as polishing, polishings after taking out.
Adopt the mode of paster type encapsulation to be fixed on red-light LED light source chip the PbS quantum fluorescent glass obtained, the silica gel of chip with the space high thermal conductivity coefficient at Quantum Dot Glass edge is filled up simultaneously, in order to avoid chip light source spilling.Make Quantum Dot Glass and chip keep certain distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.Obtained PbS-QDs fluorescent glass tem analysis result as shown in Figure 4.As can be seen from Figure 4 PbS quantum distribution is in glass still relatively more even, and particle still remains good crystalline structure, can find out that PbS quantum still maintains good polycrystalline crystal structures from diffraction ring simultaneously.
Embodiment 3
Synthesis CdTe quantum, the proportioning being 0.1% ~ 5% according to mass percent takes required CdTe quantum and SBA-15 powder.With dehydrated alcohol by the two mixing furnishing pasty state adopt magnetic stirrer 5h, then by the mashed prod after stirring after Rotary Evaporators revolves steaming 3 ~ 5 times in the dry 3h of 80 DEG C of vacuum drying ovens.Dry complete CdTe-QDs/SBA-15 powder adopts the solidification of the graphite jig of discharge plasma sintering oven to sinter CdTe quantum glass into.Sintering process is: sintering pressure is 70MPa, and temperature rise rate is 110 DEG C/min, and sintering temperature is 1020 DEG C, and soaking time is 5min, has sintered rear closedown instrument power source, has cooled to room temperature with the furnace.Sample obtains CdTe quantum glass through processes such as polishing, polishings after taking out.
Adopt the mode of paster type encapsulation to be fixed on blue light LED light source chip in the CdTe quantum glass obtained, the silica gel of chip with the space high thermal conductivity coefficient at Quantum Dot Glass edge is filled up simultaneously, in order to avoid chip light source spilling.Make Quantum Dot Glass and chip keep certain distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.Synthesized CdTe quantum Spectroscopic analysis results as shown in Figure 5.As can be seen from Figure 5, under the effect of the excitation light source of 430 nanometers, CdTe quantum forms emission peak center in 540 nanometers, and the narrower in width at whole luminous spectrum peak, halfwidth is 30 nanometers.Describe that to do the CdTe quantum distribution of sizes in the solution of synthesizing very narrow.
Embodiment 4
Synthesis CdSe/ZnS quantum dot, the proportioning being 0.1% ~ 1% according to mass percent takes required CdSe/ZnS core-shell quanta dots and SBA-15 powder.With dehydrated alcohol by the two mixing furnishing pasty state adopt magnetic stirrer 5h, then by the mashed prod after stirring after Rotary Evaporators revolves steaming 3 ~ 5 times in the dry 3h of 90 DEG C of vacuum drying ovens.Dry complete CdSe/ZnS-QDs/SBA-15 composite granule adopts the solidification of the graphite jig of discharge plasma sintering oven to sinter CdSe/ZnS core-shell quanta dots fluorescent glass into.Sintering process is: sintering pressure is 60MPa, and temperature rise rate is 100 DEG C/min, and sintering temperature is 980 DEG C, and soaking time is 2min, has sintered rear closedown instrument power source, has cooled to room temperature with the furnace.Sample obtains CdSe/ZnS quantum dot light emitting glass through processes such as polishing, polishings after taking out.
Adopt the mode of paster type encapsulation to be fixed on blue light LED light source chip in the CdSe/ZnS quantum dot light emitting glass obtained, the silica gel of chip with the space high thermal conductivity coefficient at Quantum Dot Glass edge is filled up simultaneously, in order to avoid chip light source spilling.Make Quantum Dot Glass and chip keep certain distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.The photoluminescence spectrogram of the CdSe/ZnS core-shell quanta dots fluorescent glass of gained as shown in Figure 6.As can be seen from Figure 6, CdSe/ZnS core-shell quanta dots fluorescent glass forms luminescence center in 550 nanometers under the exciting light of 450 nanometers, and the luminous intensity of Quantum Dot Glass is still very strong.Describe core-shell quanta dots becomes can be good to keep quantum dot luminous intensity at the powder base sintering curing of SBA-15.
Claims (9)
1. a quantum dot LED fluorescent glass, is characterized in that: be made up of quanta point material and silicon-based mesoporous material.
2. a kind of quantum dot LED fluorescent glass as claimed in claim 1, it is characterized in that: described quanta point material adopts chemical process synthesis, wherein, single semiconductor compound quantum dot is CdS, ZnS, PbS, PbSe, ZnSe, CdSe, CdTe, ZnO, TiO
2in at least one, composite semiconductor quantum dot is at least one in CdSe/ZnS, CdSe/CdS, CdS/ZnS, CdS/PbS, CdSe/ZnSe, PbSe/PbS CdTe/ZnS, CdTeSe.
3. a kind of quantum dot LED fluorescent glass as claimed in claim 1, is characterized in that: described silicon-based mesoporous material is at least one in mesoporous silicon oxide SBA, mesopore silicon oxide aluminium MCM, mesoporous M41S.
4. a preparation method for quantum dot LED fluorescent glass, is characterized in that: described quantum dot LED fluorescent glass is made up of following 3 steps for the quantum dot LED fluorescent glass as described in any one of claims 1 to 3, the method:
Step 1: adopt chemical process to synthesize semiconductor-quantum-point;
Step 2: by quantum dot and silicon-based mesoporous powder furnishing pasty state, be uniformly mixed and be prepared into composite granule, and for subsequent use after vacuum-drying; Composite granule dried is before adopted discharge plasma technique solidification sintering, cool to room temperature with the furnace after having sintered, namely obtain corresponding quantum dot LED fluorescent glass through polishing, polishing;
Step 3: adopt paster type encapsulation to be fixed on the LED light source chip of corresponding wavelength the quantum dot LED fluorescent glass obtained, the space silica gel at LED light source chip and quantum dot LED fluorescent glass edge is filled up, make quantum dot LED fluorescent glass and LED light source chip keep at a distance simultaneously, adopt the mode of remote excitation to obtain photoluminescence.
5. the preparation method of a kind of quantum dot LED fluorescent glass as claimed in claim 4, is characterized in that: in described step 1, chemical process comprises: Aqueous phase, oil phase method, single inorganic sources method, ion implantation, ion exchange method, electrochemical process.
6. the preparation method of a kind of quantum dot LED fluorescent glass as claimed in claim 4, is characterized in that: in described step 2, and the time that pasty state composite granule stirs is 5h, and vacuum-drying temperature and time is respectively 80 ~ 100 DEG C and 3h.
7. the preparation method of a kind of quantum dot LED fluorescent glass as claimed in claim 4, it is characterized in that: in described step 2, the processing parameter of solidification sintering is: the temperature of sintering is 900 ~ 1100 DEG C, temperature rise rate is lower than 200 DEG C/min, pressure is 50 ~ 100MPa high pressure, and soaking time is lower than 5min.
8. the preparation method of a kind of quantum dot LED fluorescent glass as claimed in claim 4, is characterized in that: in described step 2, and the condition of solidification sintering is vacuum.
9. the preparation method of a kind of quantum dot LED fluorescent glass as claimed in claim 4, is characterized in that: in described step 3, during paster type encapsulation, and the size of quantum dot LED fluorescent glass and the light-emitting area of LED light source chip match.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410553134.6A CN104310784A (en) | 2014-10-17 | 2014-10-17 | Quantum dot LED light emitting glass and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410553134.6A CN104310784A (en) | 2014-10-17 | 2014-10-17 | Quantum dot LED light emitting glass and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104310784A true CN104310784A (en) | 2015-01-28 |
Family
ID=52366135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410553134.6A Pending CN104310784A (en) | 2014-10-17 | 2014-10-17 | Quantum dot LED light emitting glass and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104310784A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104692660A (en) * | 2015-02-27 | 2015-06-10 | 武汉理工大学 | Preparation method of cadmium selenide quantum dot glass |
| CN104876441A (en) * | 2015-04-10 | 2015-09-02 | 东华大学 | Quantum dot glass phosphor powder as well as preparation method and application thereof |
| CN105720176A (en) * | 2016-02-19 | 2016-06-29 | 京东方科技集团股份有限公司 | Capsule quantum dots and light emitting method, preparation method and display apparatus |
| CN108807703A (en) * | 2017-05-05 | 2018-11-13 | Tcl集团股份有限公司 | A kind of QLED devices, display device and preparation method thereof |
| CN109180011A (en) * | 2018-08-09 | 2019-01-11 | 蚌埠淮畔精密机械有限公司 | A kind of PbTe/CdTe double quantum point is co-doped with borosilicate glass and its preparation process |
| CN109586155A (en) * | 2018-12-07 | 2019-04-05 | 东南大学 | Based on mesoporous SiO2The accidental laser of spherical shell combination of inner and outside quantum dot film |
| CN109809690A (en) * | 2017-11-21 | 2019-05-28 | Tcl集团股份有限公司 | Glass and preparation method thereof, carbon quantum dot composite material |
| US11015114B2 (en) | 2015-12-31 | 2021-05-25 | 3M Innovative Properties Company | Article comprising particles with quantum dots |
| US11015115B2 (en) | 2015-12-31 | 2021-05-25 | 3M Innovative Properties Company | Curable quantum dot compositions and articles |
| CN112897886A (en) * | 2021-02-04 | 2021-06-04 | 中国科学院福建物质结构研究所 | Pure silica-based glass ceramic membrane composite material |
| CN114195365A (en) * | 2021-12-16 | 2022-03-18 | 广州光联电子科技有限公司 | Fluorescent glass based on molecular sieve and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222750A (en) * | 2010-04-19 | 2011-10-19 | 海洋王照明科技股份有限公司 | White light LED (Light Emitting Diode) device and manufacturing method thereof |
| CN101676233B (en) * | 2008-09-19 | 2011-12-14 | 中国科学院上海硅酸盐研究所 | Method for preparing block functional glass |
| KR20130125107A (en) * | 2012-05-08 | 2013-11-18 | 한국세라믹기술원 | Nano hybrid composite as phosphor of display and preparation method thereof |
| CN103936300A (en) * | 2014-03-26 | 2014-07-23 | 中国科学院上海光学精密机械研究所 | Quantum-dot-doped aluminium phosphate mesoporous glass nanometer compound and preparation method thereof |
-
2014
- 2014-10-17 CN CN201410553134.6A patent/CN104310784A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101676233B (en) * | 2008-09-19 | 2011-12-14 | 中国科学院上海硅酸盐研究所 | Method for preparing block functional glass |
| CN102222750A (en) * | 2010-04-19 | 2011-10-19 | 海洋王照明科技股份有限公司 | White light LED (Light Emitting Diode) device and manufacturing method thereof |
| KR20130125107A (en) * | 2012-05-08 | 2013-11-18 | 한국세라믹기술원 | Nano hybrid composite as phosphor of display and preparation method thereof |
| CN103936300A (en) * | 2014-03-26 | 2014-07-23 | 中国科学院上海光学精密机械研究所 | Quantum-dot-doped aluminium phosphate mesoporous glass nanometer compound and preparation method thereof |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104692660A (en) * | 2015-02-27 | 2015-06-10 | 武汉理工大学 | Preparation method of cadmium selenide quantum dot glass |
| CN104876441A (en) * | 2015-04-10 | 2015-09-02 | 东华大学 | Quantum dot glass phosphor powder as well as preparation method and application thereof |
| US11015115B2 (en) | 2015-12-31 | 2021-05-25 | 3M Innovative Properties Company | Curable quantum dot compositions and articles |
| US11015114B2 (en) | 2015-12-31 | 2021-05-25 | 3M Innovative Properties Company | Article comprising particles with quantum dots |
| CN105720176A (en) * | 2016-02-19 | 2016-06-29 | 京东方科技集团股份有限公司 | Capsule quantum dots and light emitting method, preparation method and display apparatus |
| CN108807703B (en) * | 2017-05-05 | 2019-11-26 | Tcl集团股份有限公司 | A kind of QLED device, display device and preparation method thereof |
| CN108807703A (en) * | 2017-05-05 | 2018-11-13 | Tcl集团股份有限公司 | A kind of QLED devices, display device and preparation method thereof |
| CN109809690A (en) * | 2017-11-21 | 2019-05-28 | Tcl集团股份有限公司 | Glass and preparation method thereof, carbon quantum dot composite material |
| CN109180011B (en) * | 2018-08-09 | 2020-06-02 | 苏州融睿电子科技有限公司 | PbTe/CdTe double quantum dot co-doped borosilicate glass and preparation process thereof |
| CN109180011A (en) * | 2018-08-09 | 2019-01-11 | 蚌埠淮畔精密机械有限公司 | A kind of PbTe/CdTe double quantum point is co-doped with borosilicate glass and its preparation process |
| CN109586155B (en) * | 2018-12-07 | 2020-09-11 | 东南大学 | Based on mesoporous SiO2Random laser with spherical shell internally and externally combined with quantum dot film |
| CN109586155A (en) * | 2018-12-07 | 2019-04-05 | 东南大学 | Based on mesoporous SiO2The accidental laser of spherical shell combination of inner and outside quantum dot film |
| CN112897886A (en) * | 2021-02-04 | 2021-06-04 | 中国科学院福建物质结构研究所 | Pure silica-based glass ceramic membrane composite material |
| CN114195365A (en) * | 2021-12-16 | 2022-03-18 | 广州光联电子科技有限公司 | Fluorescent glass based on molecular sieve and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104310784A (en) | Quantum dot LED light emitting glass and preparation method thereof | |
| Wei et al. | Transparent Ce: Y3Al5O12 ceramic phosphors for white light-emitting diodes | |
| Liu et al. | Composition and structure design of three-layered composite phosphors for high color rendering chip-on-board light-emitting diode devices | |
| Aboulaich et al. | Ce-doped YAG nanophosphor and red emitting CuInS2/ZnS core/shell quantum dots for warm white light-emitting diode with high color rendering index | |
| CN107540368B (en) | Preparation method of complex-phase semitransparent fluorescent ceramic and LED module | |
| Liu et al. | Effect of gallium ion content on thermal stability and reliability of YAG: Ce phosphor films for white LEDs | |
| CN106129229A (en) | A kind of LED packaging based on quantum dot granule and preparation method thereof | |
| GB2410612A (en) | White light and colour controlled LEDs | |
| CN105018080B (en) | A kind of preparation method of specular removal fluorescent material | |
| CN106299089A (en) | A kind of white light LED packaging device and preparation method thereof | |
| CN102800794A (en) | Optical wavelength conversion device and application thereof in white light emitting device | |
| EP3767167B1 (en) | Led light source for plant light supplementation and lamp comprising the same | |
| Dai et al. | 2D photonic crystal layer assisted thiosilicate ceramic plate with red‐emitting film for high quality w‐LED s | |
| Yin et al. | The thermal stability performances of the color rendering index of white light emitting diodes with the red quantum dots encapsulation | |
| Wen et al. | Effect of grain size on the luminescent properties of Ce3+ doped Y3Al5O12 ceramic phosphor plates | |
| TW201302986A (en) | Fluorescent layer and its preparation method and uses | |
| CN108110123B (en) | A kind of quantum spot white light LED and preparation method thereof | |
| Yin et al. | CdTe quantum dots and YAG hybrid phosphors for white light‐emitting diodes | |
| Chawla et al. | Enhancement of luminescence in ZnMgO thin‐film nanophosphors and application for white light generation | |
| CN104876441B (en) | A kind of Quantum Dot Glass fluorescent material and its preparation method and application | |
| KR101596361B1 (en) | Natural light LED package and lighting device comprising the same | |
| Du et al. | Electroluminescent Properties of WLEDs With the Structures of Ce: YAG Single Crystal/Blue Chip and ${Sr} _ {2}{Si} _ {5}{N} _ {8} $: ${Eu}^{2+} $/Ce: YAG Single Crystal/Blue Chip | |
| Zhang et al. | Synthesis and electroluminescence of novel white fluorescence quantum dots based on a Zn–Ga–S host | |
| Yang et al. | Enhancement of thermal stability and reliability of green LuAG phosphors by appropriate Y substitution | |
| CN105400512A (en) | Red tungstate fluorescent powder as well as preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150128 |