CN103489907A - 一种绝缘栅双极型晶体管 - Google Patents
一种绝缘栅双极型晶体管 Download PDFInfo
- Publication number
- CN103489907A CN103489907A CN201310420417.9A CN201310420417A CN103489907A CN 103489907 A CN103489907 A CN 103489907A CN 201310420417 A CN201310420417 A CN 201310420417A CN 103489907 A CN103489907 A CN 103489907A
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- igbt
- tagma
- type
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 abstract description 16
- 239000004020 conductor Substances 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310420417.9A CN103489907B (zh) | 2013-09-16 | 2013-09-16 | 一种绝缘栅双极型晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310420417.9A CN103489907B (zh) | 2013-09-16 | 2013-09-16 | 一种绝缘栅双极型晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103489907A true CN103489907A (zh) | 2014-01-01 |
CN103489907B CN103489907B (zh) | 2016-02-03 |
Family
ID=49830006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310420417.9A Expired - Fee Related CN103489907B (zh) | 2013-09-16 | 2013-09-16 | 一种绝缘栅双极型晶体管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103489907B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024854A (zh) * | 2015-03-25 | 2016-10-12 | 瑞萨电子株式会社 | 半导体装置及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040178441A1 (en) * | 2003-03-11 | 2004-09-16 | Satoshi Yanagisawa | Insulated gate type semiconductor device and method of manufacturing the same |
CN1950947A (zh) * | 2004-05-12 | 2007-04-18 | 株式会社丰田中央研究所 | 半导体器件 |
JP2008251620A (ja) * | 2007-03-29 | 2008-10-16 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2011040586A (ja) * | 2009-08-12 | 2011-02-24 | Hitachi Ltd | トレンチゲート型半導体装置 |
-
2013
- 2013-09-16 CN CN201310420417.9A patent/CN103489907B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040178441A1 (en) * | 2003-03-11 | 2004-09-16 | Satoshi Yanagisawa | Insulated gate type semiconductor device and method of manufacturing the same |
CN1950947A (zh) * | 2004-05-12 | 2007-04-18 | 株式会社丰田中央研究所 | 半导体器件 |
JP2008251620A (ja) * | 2007-03-29 | 2008-10-16 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2011040586A (ja) * | 2009-08-12 | 2011-02-24 | Hitachi Ltd | トレンチゲート型半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024854A (zh) * | 2015-03-25 | 2016-10-12 | 瑞萨电子株式会社 | 半导体装置及其制造方法 |
CN106024854B (zh) * | 2015-03-25 | 2021-01-19 | 瑞萨电子株式会社 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103489907B (zh) | 2016-02-03 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERIN Effective date: 20140801 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140801 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: Institute of Electronic and Information Engineering In Dongguan, UESTC Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20160916 |