CN103476582A - Structure and method of making graphene nanoribbons - Google Patents

Structure and method of making graphene nanoribbons Download PDF

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CN103476582A
CN103476582A CN2012800189578A CN201280018957A CN103476582A CN 103476582 A CN103476582 A CN 103476582A CN 2012800189578 A CN2012800189578 A CN 2012800189578A CN 201280018957 A CN201280018957 A CN 201280018957A CN 103476582 A CN103476582 A CN 103476582A
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graphene
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matrix
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mesostroma
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CN103476582B (en
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C·蒂米特拉克普洛斯
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Abstract

Disclosed is a ribbon of graphene less than 3 nm wide, more preferably less than 1 nm wide. In a more preferred embodiment, there are multiple ribbons of graphene each with a width of one of the following dimensions: the length of 2 phenyl rings fused together, the length of 3 phenyl rings fused together, the length of 4 phenyl rings fused together, and the length of 5 phenyl rings fused together. In another preferred embodiment the edges of the ribbons are parallel to each other. In another preferred embodiment, the ribbons have at least one arm chair edge and may have wider widths.

Description

Structure and method for the preparation of graphene nanobelt
Invention field
The present invention relates to Graphene of arrowband structure and preparation method thereof.More specifically, the present invention relates to the purposes of Graphene band in electric device.
background of invention
the prior art summary
Graphene is defined as the graphite individual layer of the carbon atom of (2D) hexagonal lattice that has the two dimension of occupying.Past be widely used to simulate CNT (CNT) electronic structure [referring to R.Saito, G.Dresselhaus, M.S.Dresselhaus, Physical Properties of Carbon nanotubes, Imperial College Press, London, 1998; T.Ando, Advances in Solid State Physics, Springer, Berlin, 1998, the 1-18 pages, S.Reich, C.Thomsen, J.Maultzsch, " CNT ", Wiley-VCH, 2004ISBN3-527-40386-8].Graphene is 2D, zero clearance (zero-gap) semiconductor, and it demonstrates the linear relationship between electronic energy E (p) and 2D momentum p, i.e. E (p)=v op (V wherein ofor carrier velocity,
Figure BDA0000397500880000011
Figure BDA0000397500880000012
for Planck's constant divided by 2 π, and k xand k ybe respectively the reciprocal space vector (reciprocal space vector) on x and y direction), rather than the conventional semi-conductive second energy that can be with-momentum relation (quadratic energymomentum relationship) is described [referring to C, the people such as Berger, Science312,1191, (2006)].This hint electron effective mass is that the charge carrier in zero and Graphene can be described as relative Di Lake fermion (relativistic Dirac Fermion).Graphene layer with quite large lateral dimensions peels off the [people such as K.S.Novoselov by graphite, Science306,666, (2004)], by the latter's pyrolytic on SiC extension [people such as C.Berger, J.Phys.Chem.B, 108,19912,2004], or by chemical vapour deposition (CVD) (on metal) produce.[Reina, the people such as A., Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition.Nano Lett.9,30-35, (2009); The people such as Li X., Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science324,1312-1314, (2009)].The remarkable transmission performance that studies show that Graphene of report [people such as K.S.Novoselov, Nature (2005) 438, and 197; The people such as Y.Zhang, Nature (2005) 438, and 201; The people such as C.Berger, Science (2006) 312, and 1191; M.I.Katsnelson, Materials Today (2007) 10,20], comprise approximately 2 * 10 4cm 2/ V.s level, be similar to those or higher electronics and the hole mobility reported about single CNT.Yet, in the graphene device that suspends, carrier mobility μ=(ne ρ) -1, wherein n is carrier density, and ρ is resistivity, can surpass 200,000cm 2/ V.s.[is referring to Bolotin, the people such as K.I., Ultrahigh electron mobility in suspended graphene.Solid State Commun.146,351-355 (2008) .]
Based on these performances, think that graphite is suitable for the active channel of doing field-effect transistor (FET) application.Yet, because Graphene macroscopic view 2D sheet is this fact of zero gap semiconductor, it can not be with its 2D form for FET digital, Logic application.Experimentally in single and double layer graphene, all observe about e 2the minimum conductance of/h (wherein e is electron charge, and h is Planck's constant) [referring to people such as K.S.Novoselov, Nature (2005) 438, and 197; M.I.Katsnelson, Materials Today (2007) 10, and 20].This can make to produce has reasonable I on/ I offthan the FET of (being switch current ratio), because I offcan be too high.
The spatia zonularis of prior art demonstration 100-250meV can be opened under specific circumstances (for example, by the doped portion [T.Ohta of Graphene bilayer in the 2D Graphene, A.Bostwick, T.Seyller, K.Horn, E.Rotenberg, Science, 313, 951, (2006)], due to [the people such as Zhou S.Y. of the interaction with matrix, Substrate-induced bandgap opening in epitaxial graphene Nature Mater.6, 770, (2007)], or by applying the appropriate combination [Y.Zhang perpendicular to the antisymmetry electric field of Graphene double layer planar, Deng the people, " Direct observation of a widely tunable bandgap in bilayer graphene, " Nature 459, 820 (2009)]).Band gap magnitude in this scope may be too low for digital application.In addition, all these routes have serious intrinsic problem, comprise and do not have the controllable doped good method of application in Graphene; The selection of the matrix only needs based on opening band gap is carried out; The inhomogeneities of the impact of stromal surface defect and Graphene performance is obvious; Active layer is to have in the semi-conductive conventional field effect transistor of fixing band gap therein, uses the carrier concentration in grid regulation and control passage, rather than regulates and controls semi-conductive band gap.The second needs that act on about grid can the serious complicated or transistorized performance of obstruction Graphene.
Theoretical calculating shows the narrow Graphene band with nanoscale width, is defined as herein nanobelt, demonstrates energy bandgaps.This is because, except their 2D restriction, the electronics in Graphene is limited by the narrow width of nanobelt further.Rear one limits the division of the original 2D energy level that produces Graphene, obtains having the graphene nanobelt semiconductor of limited energy gap.Fig. 1 is based on following equation, and the band gap of Graphene band is with respect to its lateral dimensions figure of (width means with nm):
ΔE ( W ) = hv 0 2 W = 2.067 eV · nm W
v 0=10 15nm/s
W be take nm as unit
[referring to people such as C. Berger, Science (2006) 312,1191].
Fig. 1 demonstration, if the width of Graphene band fully reduces, band gap is increased to and can allows the value of manufacturing and operating the FET with good device feature.This can make Graphene FET application is possible.
Specifically to locate and direction, by the 2D Graphene, the 2D graphite flake is patterned to the top-down route of graphene nanobelt, for example use the lithographic printing (light or electron beam lithography) of some types, be limited to for the preparation of with array approximately 30nm's and in the situation that the easier minimum tape width size of the lucky about 10nm of isolated feature.Under 30nm graphene nano bandwidth, the band gap of calculating is for being less than 0.1eV, and under the 10nm width, it is about 0.2eV.Use top-down graphene nanobelt patterning, prior art produces the band gap of 30meV [referring to people such as Z. Chen, " Graphene nano-ribbon electronics " Physica E 40,228, (2007)] to 200meV [referring to people such as M. Y.Han, " Energy Band-Gap Engineering of Graphene Nano-ribbons " Phys.Rev.Lett.98,206805 (2007)].These values and main flow semiconductor (for example the band gap of Si, Ge and GaAs be respectively 1.12,0.66 with 1.42eV) compare very low, but for example, in the energy bandgaps scope of some low band gaps compound semiconductors (InSb has the band gap of 0.17eV).[referring to S.M.Sze, Physics of Semiconductor Devices, the 2nd edition, 1981, the 849 pages].
Recent Report pull open by the major axis that CNT is parallel to them method that forms graphene nanobelt, and successfully manufactured the graphene nanobelt that is narrower than 10nm.People's Recent Reports such as Tour by multi-walled carbon nano-tubes (MWCNT) sidewall is vertically cut and disassembles the solution-based method for oxidation of producing the stannic oxide/graphene nano band structure.[referring to people such as D.V.Kosynkin, Nature458872 (2009)].Then they can be reduced to graphene nanobelt by them.The people such as Dai [referring to people such as Li X., Science319,1229 (2008)] by forming gas (3% hydrogen in argon gas), be heated to 1000 ℃ 60 seconds and the business expansible graphite is peeled off.By ultrasonic processing 30 minutes, gained is peeled off to graphite and be scattered in poly-(m-phenylene vinylidene-copolymerization-2,5-bis-octyloxies-p-phenylene vinylidene) (PmPV) 1, in 2-dichloroethanes (DCE) solution, to form unit for uniform suspension.Then expanse of material is removed in centrifugation from supernatant.Using AFM (AFM) to characterize by supernatant is deposited on the material on matrix and observes a large amount of graphene nanobelts (GNR) that have from w～50nm to the various width lower than 10nm.Fluctuating height (topographic height) (average length～1 micron) of GNR is mostly between 1-1.8nm, and according to the author of this report, it is equivalent to individual layer or which floor (mainly<3 layers).[referring to the people such as Li X., Science319,1229 (2008) .].
For making thing further complicated, the crystal orientation of graphene nano belt edge determines that the latter is semi-conductive or metal.Particularly, if the long limit of graphene nanobelt has " zigzag " structure, this layer does not have band gap.On the other hand, if long limit has " armchair " structure, graphene nanobelt is semi-conductive.[referring to K.Nakada, M.Fujita, G.Dresselhaus and M.S.Dresselhaus, Phys.Rev.B (1996) 54, and 17954].In addition, if in common semiconductor armchair graphene nanobelt, the number N of repetitive has particular value,, when N=3M-1, if M is integer, GNR is metal.[referring to K.Nakada, M.Fujita, G.Dresselhaus and M.S.Dresselhaus, Phys.Rev.B (1996) 54, and 17954].
The full content of all lists of references of by reference this paper being quoted is incorporated herein.
the problem of prior art
Directly, these methods that obviously produce lower than the wide graphene nanobelt of 10nm all have manufacturability issues.People's methods such as Dai produce the mixture of nanobelt length and width.The variation of width can produce the multiple band gap in semiconductor nano-strip.People's methods such as Tour may produce the nanobelt with narrower width distribution, because width is subject to the CNT diameter control, but, owing to using MWCNT, each layer can produce different nanobelt width, even have the supply of the MWCNT that very closely controls diameter, is available.Yet, the not open required CNT diameter control of nanobelt with tight control width enough for commercial Application that produces of prior art.In addition, as described in pertinent literature, but CNT wall multiple directions pull open, produce various graphene nanobelt chiralitys and marginal texture.As we describe in the above, from " zigzag " to " armchair " changes the marginal texture of the GNR with specific width, can change from metal to semi-conductive GNR electrical feature.Therefore, inaccuracy is controlled the GNR chirality and marginal texture makes the GNR performance unpredictable, therefore extensive use technically.
Prior art, comprise Tour and Dai, all the structure of Graphene or to produce the method for these structures under the described control aspect type, size (width and length), chirality and nanobelt marginal texture openly not.In addition, prior art does not have the method for producing the specific nanobelt of a class and not producing another kind of nanobelt.The structure of two or more nanobelts of the same type that in addition, prior art does not all openly put together.The straight nanobelt of the particular type that in addition, prior art does not all openly put together.
Even prior art produces the graphene nanobelt that width is the following size of 9nm, the also unexposed nanobelt with particular bandgap randomly.In addition, the random distribution of the disclosed band gap of random sample of the prior art, it is difficult, expensive, unrealistic or impossible therefore by this class sample, producing useful structure in electric device.A reason is that prior art can not be produced aspect character, size, linearity and chirality even; There is even band gap; The structure that perhaps there is predictable location or orientation.Prior art openly do not put together two or more there is the nanobelt of identical band gap in given tolerance.This fatal shortcoming hinders the purposes of prior art in using graphene nanobelt large-scale production electric device.
Two kinds of methods are subject to probabilistic infringement of the location of GNR on matrix consumingly, because use solution methods.This randomness does not provide and CNT is placed in to any improvement that the problem on matrix is compared with predicting, does not therefore exist and uses GNR to replace the reason of CNT for electronic application.In addition, the graphene nanobelt of producing in the described method of these prior aries can not directly benefit from the nearest progress of the controlled location of CNT.
This clearly illustrates, owing to realizing that enough large band gap has the required little width of FET of reasonable device feature with generation, and no less important ground, produce the appropriate edge structure of nanobelt so that they become semiconductor required interatomic bond size horizontal accuracy and control, the top-down route that produces graphene nanobelt fails to produce electric device as FET or the required structure of diode.At present, this predictive display is real.
" " Atomically precise bottom-up fabrication of graphene nanoribbons of the people such as Jinming Cai " [people such as Cai J.; Nature466; 470, (2010)] disclose and be coupled in polyphenylene and dehydrocyclization is produced graphene nanobelt subsequently structure and method by the molecular precursor surface is auxiliary.It is 10,10 '-bis-bromo-9 that the document is used, and 9 '-dianthranide based precursor monomer, to produce the orderly row of this molecule on metal surface, then makes molecule aggregation to form graphene nanobelt by heating.Yet the Cai document is used the dianthranide molecule with the flexible covalent bond of rotation, it produces the non-rigid molecule with many possibility conformations on stromal surface.Therefore, the Cai literature method is being had any problem aspect the many parallel bands of generation really.Inspection to Fig. 2 of this list of references shows, the many bands on matrix are random orientation.
inventive aspect
One aspect of the present invention is that one or more are even aspect shape, size, linearity and/or chirality; There is uniform band gap; And/or have measurable location or orientation the Graphene band structure and produce the method for this structure.
One aspect of the present invention is wide for being less than 9nm, is more preferably less than the wide Graphene band structure of 1.6nm.
Another aspect of the present invention is the width condensed together and be 5 or the Graphene band structure of fused aromatic rings still less on strip length.
Another aspect of the present invention is the width condensed in the longitudinal direction and be 5 or the Graphene band structure of aromatic ring still less, it has the 0.5nm of being less than and changes, and is more preferably less than the width tolerance that 0.1nm changes.
Another aspect of the present invention is the width condensed in the longitudinal direction and be 5 or aromatic ring and there is the Graphene band structure at " armchair " edge still less.
Another aspect of the present invention is the width condensed in the longitudinal direction and be 5 or aromatic ring and there is " armchair " edge and there is the 0.5nm of being less than and change still less, be more preferably less than the Graphene band structure of the width tolerance that 0.1nm changes.
One aspect of the present invention on matrix, have measurable location to be less than 9nm wide, be more preferably less than the wide Graphene band structure of 1.6nm.
One aspect of the present invention on matrix, have measurable orientation to be less than 9nm wide, be more preferably less than the wide Graphene band structure of 1.6nm.
One aspect of the present invention on matrix, have measurable orientation to be less than 9nm wide, be more preferably less than the wide Graphene band structure of 1.6nm, wherein orientation is relevant to the crystal orientation of matrix.
One aspect of the present invention is wide for being less than 9nm, is more preferably less than the wide Graphene band structure of 1.6nm, and its Application standard patterning techniques is as on lithography is connected to one or more conductive electrodes.
One aspect of the present invention is wide for being less than 9nm, is more preferably less than the wide Graphene band structure of 1.6nm, its for electronic device as FET or diode.
One aspect of the present invention is wide for being less than 9nm, is more preferably less than the wide Graphene band structure of 1.6nm, and it is the passage area as FET for electronic device.
One aspect of the present invention is wide for being less than separately 9nm, preferably is less than separately the wide a plurality of Graphene band structures of 1.6nm, and it is the passage area as FET for electronic device.
One aspect of the present invention is wide for being less than separately 9nm, preferably is less than separately the wide a plurality of Graphene band structures of 1.6nm, that it is stratiform and for electronic device the passage area as FET.
Another aspect of the present invention is width and be 5 fused aromatic rings and have the 0.5nm of being less than and change, be more preferably less than the Graphene band structure of the width tolerance that 0.1nm changes, it uses pentacene molecule as the molecular structure component part.
Another aspect of the present invention is width and be 4 fused aromatic rings and have the 0.5nm of being less than and change, be more preferably less than the Graphene band structure of the width tolerance that 0.1nm changes, it uses aphthacene molecule as the molecular structure component part.
summary of the invention
The present invention is wide for being less than 3nm, is more preferably less than the wide Graphene band of 1nm.In a more preferred embodiment, there are a plurality of graphene strips, described graphene strips has the width of one of following size separately: 2 length that condense phenyl ring together, 3 length that condense phenyl ring together, 4 length that condense phenyl ring together, with the length of phenyl ring together with 5 condense.In another preferred embodiment, the edge of band is parallel to each other.In another preferred embodiment, band has at least one armchair edge and can have wider width.
The present invention further comprises the method for preparing the Graphene band, and described method comprises step:
A. one or more poly-aromatic hydrocarbon (PAH) precursors are placed on matrix;
B. UV light is applied to PAH upper until form one or more intermolecular linkages between adjacent PAH molecule; With
C. heat is applied on the PAH molecule to number to improve the intermolecular linkage formed to produce the Graphene band.
The present invention further comprises the electric device structure had with two or more Graphene bands of non-conductive matrix surface-Surface Contact.Band has separately the width and the band that are less than 3nm and has separately edge parallel to each other.In preferred embodiments, band forms the passage in field-effect transistor (FET).
the accompanying drawing summary
The figure that Fig. 1 is a function in prior art, it shows band-gap energy with respect to the GNR width.
Fig. 2 A is for showing the prior image (prior image) of the arrangement of pentacene molecule on auri matter.
Fig. 2 B is for showing the prior image of the arrangement of pentacene molecule on auri matter.
Fig. 3 shows the schematic diagram of the prior art pentacene molecular array be arranged side by side as shown in Figure 2.
Fig. 4 is the chemistry interconnection schematic diagram with the novel pentacene molecular array be arranged side by side that prevents volatilization.
Fig. 5 A for the structure by by Fig. 4 heating and/or irradiate produces to be less than 3nm wide and have a schematic diagram that armchair is grown the novel graphite alkene nanobelt (GNR) on limit.
The order of three kinds of new constructions of Fig. 5 B demonstration (at first, one row's aphthacene molecule, second, the chemistry interconnection is to prevent the aphthacene molecule be arranged side by side of volatilization, the 3rd, by aphthacene chemistry interconnection structure (540), produced to be less than 2nm wide and have a new graphene nanobelt (GNR) on the long limit of armchair.
The order of three kinds of new constructions of Fig. 5 C demonstration (at first, one row's anthracene molecule, the second, the chemistry interconnection is to prevent the anthracene molecule be arranged side by side of volatilization, the 3rd, by anthracene chemistry interconnection structure (580), produced to be less than 1.5nm wide and have a new graphene nanobelt (GNR) on the long limit of armchair.
To be less than 3nm wide and have a schematic diagram of new method of the graphene nanobelt on the long limit of armchair in order to produce for Fig. 6.
Fig. 7 is the block diagram for the production of the equipment of graphene nanobelt.
Fig. 8, comprise Fig. 8 A-8E, discloses in preparation and had the structure prepared during the step of FET of GNR passage of the present invention.
Fig. 9 discloses the step for preparing the method for the FET with GNR passage of the present invention.
Figure 10 is the table of the prior art of the bond dissociation energy of open carbon-to-carbon double bond and carbon-hydrogen link.
The prior art figure of ultraviolet ray (UV) spectrum that Figure 11 is the emission of mercury (Hg) lamp.
detailed Description Of The Invention
Therefore, the present invention is bottom-up route, i.e. such route, and wherein graphene nanobelt is used for the suitable molecule self assembly is formed in the method for the lip-deep orderly row of suitable matrix to prepare this quasi-molecule by use.Make suitable molecule (preferably anthracene, aphthacene, pentacene) chemical modification, be assembled into and there is the large molecule of volatile aromatics of reduction with calm (flat – lying) row on matrix simultaneously.In preferred embodiments, the large molecule of chemical aromatics for example, for example, by energy beam (electromagnetic radiation, UV light, X ray or e-bundle or other radiation) or plasma generation, and it can cause chemical change before the evaporation of appropriate precursors molecule or distillation.Combination by heat and/or radiation makes the large molecule of aromatics further transform to form graphene nanobelt.Because the large molecule of aromatics has higher molecular weight, the large molecule of aromatics is not volatile, and can absorb higher heat and/or radiation and do not distil/evaporate it being changed into before graphene nanobelt (GNR).These GNR have accurately width and the marginal texture by the geometry definition of the orderly row of the chemical constitution of original (precursor) molecule and calm " acene " precursor molecule.
In addition, be different from CNT, when having periodic boundary condition, GNR has the edge with localized state [10] that also can affect transmission.The GNR very narrow due to needs can be used for the band gap of logic FET application with realization, the effect at edge may be crucial.Theoretical calculating demonstration, when different hetero atoms connects or occupies the marginal position in the graphene nanobelt lattice, the transmission performance of each graphene nanobelt of substantial effect.Therefore, the chemical behavior on the long limit of control graphene nanobelt is ideal.Herein in addition, previous top-down route does not provide specific atoms is placed on to the locational accuracy of particular edge of graphene nanobelt of top-down production and selective.On the other hand, the bottom-up route that present disclosure proposes exactly is very suitable for doing like this.Originate in suitably functionalized molecule, produce the monomer (preferably and benzene molecular) of nanobelt after the polymerization (preparing the large molecule of aromatics), can by clearly synthetic precursor molecule, to comprise desired molecule in its long end, to produce the suitable edge of graphene nanobelt functionalized.
Therefore, by using preferred and benzene molecular (being shown as in the drawings element 300,530 and 560), except required " armchair " marginal texture, the Graphene of generation has required hydrogen end at GNR end and long limit.In addition, the suitable atoms that precursor benzene molecular can be different to hydrogen in molecular end by increase is carried out modification, produces the acene derived molecules.As selection, these acene derived molecules can be used for using the disclosure content to produce GNR, and wherein the long limit of GNR can have " armchair " structure, but has the end atom that is different from hydrogen.For example, the GNR produced with the acene derived molecules with the bromine (chlorine, nitrogen etc.) that is combined in the acene molecular end can produce on long limit and there is bromine (etc.) GNR of end.Can in GNR, produce so different and/or be better than by top-down route or use the electrical property (for example electron mobility) of this route with those GNR that also benzene precursor produces.Potentially, use the acene derived molecules can produce the electron mobility equally high with two-dimentional Graphene as precursor.
Fig. 2 A is for showing the prior image of the arrangement of pentacene molecule on auri matter.Fig. 2 A demonstration length just pentacene molecule more than 1.5nm can be grown by the parallel row of narrow gap and the capable same widths of separating of the arest neighbors (nn) on appropriate surfaces.In fact the pentacene molecule is parallel to surface and in fact places perpendicular to the direction of band with its major axis, as shown in the prior art people such as [, Phys.Rev.B75,085309 (2007)] Kafer D..
Although Fig. 2 A shows self assembly calm in the lip-deep pentacene molecule of Au (111).Yet prior art is not recognized or is disclosed calm pentacene and prepares the macromolecular purposes of aromatics and advantage.In addition, prior art does not have open or recognizes at location pentacene molecule to produce the macromolecular dimensional requirement of aromatics.
Fig. 2 B is for showing the prior image 210 of the arrangement of pentacene molecule on auri matter.
Fig. 2 B determines the size of pentacene molecule shown in Fig. 2 A, and it is required that it should be the large molecule of generation aromatics.Particularly, the arest neighbors of adjacent pentacene molecule (nn) is if the clearance distance between atom 240 needs enough approachingly to make the arest neighbors bond fission, and two nn carbon atoms of this adjacent pentacene molecule in some place that can be in molecule can form the generation chemical bond.In preferred embodiments, the Van der Waals Surface Contact of these nn molecules.This is just in time the situation in Fig. 2 B, as shown in the line 240 in figure.In addition, for formation has the GNR that regular armchair is grown limit, row distance 250 between capable arest neighbors (nn) atom of adjacent pentacene molecule needs enough greatly, if make the arest neighbors hydrogen atom key of removing between row, between two nn carbon atoms of the pentacene molecule in these class adjacent lines, can not produce chemical bond.In preferred embodiments, row distance 250 is approximately 2
Figure BDA0000397500880000111
, more preferably 0.19nm.By chance this is also the situation in Fig. 2 A, because the distance between the capable molecule of nn, row distance 250, be greater than the intermolecular distance 240 in colleague mutually.This is the capable and stromal surface of acene, be Au (111) herein, between epitaxial relationship force.This prevents polymerization in the ranks, and it can produce two-dimentional Graphene and form.Therefore, the preferred substrate that is located thereon for the acene molecular precursor of gold (Au), because intermolecular distance 240 is actually zero, simultaneously because of acene precursor molecule and golden epitaxial relationship, row distance 250 is approximately 2
Figure BDA0000397500880000112
.As mentioned below, can expect that other matrix, condition are to keep these standards.
In addition, we have increased dotted line, an intermolecular distance that dotted line 240 means in row, two other 250 display line distance, the distance between row.With regard to forming the large molecule of aromatics, do not recognize these distances and restriction in prior art.The gap clearly existed between the Van der Waals surface of molecule during two nn of line 250 demonstration pentacene (and benzene precursor) molecules are capable.We calculate this gap is approximately 2
Figure BDA0000397500880000113
.On the other hand, there do not is gap 240 between the Van der Waals surface of same image demonstration with this class pentacene molecule in a line.Therefore, when c h bond ruptures by suitable high-energy radiation, the reaction between molecule in same a line must occur, therefore cause the polymerization along pentacene molecule single file.Anticipation reaction does not occur between the molecule in nn is capable, because have 2 between their Van der Waals surface gap, row distance 250.
Should be understood that and can select to be different from golden matrix to realize the purpose of present disclosure, condition be matrix can: 1. in causing that precursor molecule is calm and being expert at, 2. row distance 250 is enough greatly to prevent polymerization in the ranks, and in 3. row, the intermolecular clearance distance 240 between the nn precursor molecule is enough little of to produce key between precursor molecule.The example of other matrix is to have those of the single-orientated surface-rendering (reconstruction) of on matrix generation, for example silicon (110) and silicon (100) surface-rendering, and it produces dimer row.There are spendable many other (110) and (100) surface, for example copper (110).In addition, these matrix can not form covalent bond with precursor molecule.
In addition, expection has the dielectric substrate of dimer row surface-rendering.These surfaces have long-range order reproduces, the GNR that it can obtain growing very much.The example of insulator is carborundum.
Fig. 3 shows the schematic diagram of the prior art pentacene molecular array as be arranged side by side in Fig. 2 A.
Fig. 3 further shows the derivative precursor molecule of optional pentacene.In the drawings, optionally the bromine atoms (not shown) is added in to the end of pentacene molecule.It should be pointed out that Fig. 3 is presented at the pentacene molecule that end has the normal hydrogen atom if do not add bromine atoms.As selection, some bromine atoms can be used with carbon and form other element of covalent single bond or functional group as chlorine, fluorine, from other element, the NH of halogen family 4, the replacement such as OH.
Fig. 4 is the chemistry interconnection schematic diagram with the new pentacene molecular array be arranged side by side that prevents volatilization.
Importantly between the nn in same a line benzene molecular, form at least one key.This is by application of radiation, as enough also forming the C-C key between the nn molecule in same a part is capable subsequently with dehydrogenation and carry out from separating c h bond.In preferred embodiments, the radiation of application has the power spectrum (for example ultraviolet radiation, x x radiation x, electron beam or gamma-rays) that comprises the wavelength shorter than visible ray.In a more preferred embodiment, use the UV light that wavelength is 250-350nm.The dissociation energy of this scope based on c h bond selected, according to the table in Figure 10, the dissociation energy of described c h bond is that 3.8-4.6eV (wavelength 326-270nm) is (about the R.Walsh that is referenced as of Figure 10, Acc.Chem.Res.14,246-252, (1981) and Gelest:Silanes, Silicones and metal organics catalog, (2000)).
In a more preferred embodiment, use the UV light from mercury (Hg) light source.The typical power spectrum produced by this source is shown in Figure 11.(about be referenced as " the UV Curing:Science and Technology " of Figure 11, the II volume, S.P.Pappas edits, and the 63rd page, 1985.) expection the radioactive exposure time should be 1-45 minute.As selection, be similar under described those the condition of prior art by the flood electron beam, the e-of 2keV bundle can, beam electronic current and the 100-1000 μ C/cm of 1mA 2accumulated dose irradiate sample (reference: " Evaluation of Device Damage from e-Beam Curing of Ultra Low-k BEOL Dielectrics ", S.Mehta, C.Dimitrakopoulos, R.Augur, J.Gambino, A.Chou, T.Hook, B.Linder, W.Tseng, R.Bolam, D.Harmon, D.Massey, S.Gates, H.Nye, Proceedings of the Advanced Metallization Conference2005 (AMC2005), editor: S.H.Brongersma, T.C.Taylor, M.Tsujimura, K.Masu, Pub.MRS, Warrendale, PA, the V-21 volume, the 261-267 page, (2006)).
In order being exposed to very at the temperature lower than the sublimation temperature of specific acene of acene individual layer carried out under vacuum.By producing intermolecular linkage (for each nn molecule at least one) between the molecule in same a part is capable, produce the large molecule of sublimation temperature and the proportional raising of each size.Therefore, we improve subsequently the temperature radiation irradiation of selected type (optionally simultaneously use) and there is no the possibility of molecules sublimated and the capable destruction of molecule.When temperature is enough high, dehydrogenation (c h bond from separating and the removing of H atom, it sublimes up in vacuum chamber) occurs, stay the dangling bonds of C, this finally causes formation covalency C-C key between nn benzene molecular.This is to compare with forming new C-C key, the result of the upper state of two dangling bonds at nn position.In even higher annealing temperature, approach 1000 ℃, but, under for example, fusing point lower than matrix (Au), the typical sp of further dehydrogenation and Graphene can occur 2the formation of structure, because this is favourable and for unusual stable state aspect energy.Prior art provides a large amount of graphitizations and the example of formed graphite constancy of species at the temperature of 700-1000 ℃.
As shown in Fig. 2 B, the clearance distance 240 between arest neighbors (nn) atom of adjacent and benzene molecular needs enough approaching, makes when the arest neighbors bond fission, and this some place in molecule can form the chemical bond between two nn carbon atoms of adjacent pentacene molecule.In preferred embodiments, the Van der Waals Surface Contact of these nn molecules.This is just in time the situation in Fig. 2 B, as shown in the line 240 in figure.In addition, for formation has the GNR that regular armchair is grown limit, row distance 250 between adjacent and arest neighbors (nn) atom that benzene molecular is capable needs enough greatly, if make nn hydrogen-carbon atom key between row from separating and remove dehydrogenation, between two nn carbon atoms of the also benzene molecular in these class adjacent lines, can not produce chemical bond.In preferred embodiments, row distance 250 is approximately 2
Figure BDA0000397500880000141
or larger.By chance this is also the situation in Fig. 2 A, because the distance between the capable molecule of nn, row distance 250 is greater than the intermolecular distance 240 in same a line.This is the capable and stromal surface of acene, Au (111) herein, between epitaxial relationship force.This prevents polymerization in row.
And the sp of benzene molecular 2some C=C in structure and C-C key also can rupture by collision photon during the radiation treatment at the acene layer (under room temperature or higher temperature).Yet carbon atom is even also non-volatile for example, than 1000 ℃ of much higher temperature (1500 ℃) at.Therefore, even their C-C bond fissions on nn C atom, the C atom is retained in the position on matrix, so they have the free and final sp of Graphene that is conducive to aspect energy of the institute of this class C-C key of reforming 2structure.Obviously, this is not the situation of H atom, in the c h bond fracture soon later, even the at room temperature also volatilization of H atom.This guarantees to form intermolecular C-C key (and final sp 2structure), keep C-C key in molecule, although they may temporarily rupture and reform simultaneously.Therefore, owing to allowing its (can obtain long-time) on dynamics, finally from the angle of energy, can form sp 2structure, thus use bottom-up production decision to produce required GNR.
After the lower long-term irradiation of temperature (can be room temperature) in ad hoc approach below the sublimation point of specific and benzene molecular used, its guarantee capable for same a part in each nn molecule pair, form at least one key, make temperature rise to promote further dehydrogenation and approach the final sp of formation at the temperature of 1000 ℃ 2structure.Heating rate can be 10-200 ℃/minute, thereafter in specific rising temperature, and 500-1000 ℃, preferably annealing under 1000 ℃.
Fig. 5 A is for by by the structure of Fig. 4 heating, and preferably with the UV irradiation, produce in addition to be less than 3nm wide and have a schematic diagram of the new graphene nanobelt (GNR) on armchair length limit.
The order of three kinds of new constructions of Fig. 5 B demonstration (at first, one row's aphthacene molecule, second, the chemistry interconnection is to prevent the aphthacene molecule be arranged side by side of volatilization, the 3rd, by aphthacene chemistry interconnection structure (540), produced to be less than 2nm wide and have a new graphene nanobelt (GNR) on the long limit of armchair).
The order of three kinds of new constructions of Fig. 5 C demonstration (at first, one row's anthracene molecule, second, the chemistry interconnection is to prevent the anthracene molecule be arranged side by side of volatilization, the 3rd, by anthracene chemistry interconnection structure (580), produced to be less than 1.5nm wide and have a new graphene nanobelt (GNR) on the long limit of armchair).
To be less than 3nm wide and have a schematic diagram of new method of the graphene nanobelt on the long limit of armchair in order to produce for Fig. 6.
Method 600 by by acene precursor layer deposition 610 on matrix and, it causes the assembling of acene precursor molecule to be embarked on journey, as shown in Figure 2 A.As mentioned above, gold (111) is preferred matrix, because be the matrix with dimer row surface-rendering.As mentioned above, preferred and benzene molecular comprises anthracene, aphthacene and pentacene.Preferred deposition process is included in as shown in Figure 7 and heats and benzene precursor in vacuum environment in equipment, makes precursor be sublimed into gaseous state, produces the molecular beam of precursor.This molecular beam is sent to matrix, and wherein precursor deposition (for example, by condensation) is on matrix.When in preferred embodiments, being deposited on individual layer and completing, stop.May there is the zone that wherein thickness is 2 layers of individual layer on matrix.Use thickness monitor well known in the art, the termination that for example quartz crystal thickness monitor (QCM) is set up thickness terminal and deposition.Use the known surface science and technology that QCM is demarcated to measure exactly the individual layer coverage rate.Preferred vacuum is below the 1E-9 holder.This vacuum below horizontal guarantees that matrix keeps clean in whole deposition.
As mentioned above, because the epitaxial relationship of precursor molecule and matrix, and benzene precursor can be to approach zero intermolecular distance 240 and approximately 2
Figure BDA0000397500880000151
row distance 250 be arranged in rows 300.
Next step 620 is to form at least one key between nn in same a line benzene molecular.This as above undertaken by application of radiation described in the description of Fig. 4.In preferred embodiments, the radiation of application has the above energy of visible ray.In a more preferred embodiment, use the UV light that wavelength is 250-350nm.In a more preferred embodiment, use the UV light from the Hg light source.The radioactive exposure time of expection should be 1-45 minute.
In step 630, Graphene forms by adding heat to change the large molecule 400 formed in step 620.Because large molecule 400 forms in step 620, adding of heat can not make molecule volatilize in the past at dehydrogenation formation GNR500.The amount of heat of application is preferably 250 ℃, but for example, lower than the fusing point of matrix (gold layer).Proof gold has the fusing point of 1064 ℃.Heat can be applied 10 minutes to 10 hours in oxygen-free atmosphere, and wherein Best Times is measured by experiment.In preferred embodiments, in step 620, the radiation of application continues in the heat application of whole step 630.Heat is preferably applied to promote dehydrogenation and is formed the sp of carbon-carbon bond in the vacuum chamber of Fig. 7 2structure is to form GNR500.
Fig. 7 is the block diagram for the production of the equipment 700 of graphene nanobelt.
Equipment 700 comprises the vacuum chamber 710 that becomes known for the general deposition of material on matrix.These vacuum chambers 710 be know and can be used as single unit system or buy with the assembly for assembling.Usually vacuum chamber 710 is vacuumized by vavuum pump interface 730 by the vavuum pump (not shown).Vavuum pump can be a turbine pump and a mechanical pump of arranged in series, and optionally can comprise ionic pump and titanium sublimation pump.
Chamber equipment 700 comprises hot radical matter fixture 720, for example is usually used in the polymerization boron nitride of this purpose/pyrolytic graphite heater.
Chamber equipment 700 further comprises molecular source 750, and it can be common known effusion cell (effusion cell) 750.
The further radiation source 740 that comprises of chamber equipment 700, it is for by applying radiation for transparent window carbon-hydrogen link is ruptured under required spectral frequency, preferably UV light novelly.In preferred embodiments, mercury (Hg) lamp that this window consists of quartz and radiation source is spectrum shown in meeting generation Figure 11.
Fig. 8, comprise Fig. 8 A-8E, discloses in preparation and had the structure prepared during the step of FET of GNR passage of the present invention.
Structure in Fig. 8 A shows can be by gold (111) or for any other matrix 820 that preferably layer any material deposited thereon forms of the GNR that grows.The example of matrix 820 comprises silicon, germanium, sapphire, or gold (or other layer) is preferably to be orientated as (111) growth any other single crystal substrate thereon.In preferred embodiments, between the major part of matrix 820 and next acene growth table surface layer 815, there is ultra-thin peel ply, for example gold.Peel ply be know and can be by silicon the SiO in the ultra thin wafer on insulator 2form.Lower one deck 815 is gold (111) layer or other preferred layer, for example dimer surface-rendering layer as mentioned above.The GNR layer that layer 810 is preparation as described herein.Layer 805 is for being deposited on GNR and for any known gate insulator material of field-effect transistor (FET).The example of layer 805 comprises that insulator is as SiO 2, HfO 2, Al 2o 3or wherein at first deposit the composite gate insulator of polysen layer (based on polycarboxylated styrene-referring to people such as Y.-M.Lin, Science327,662, (2010)).Grid layer 850 for the conductive material that is usually used in the application of FET gate electrode and will be on gate insulator layer 805 patterning.Grid 850 materials are known, comprising: copper, gold, titanium-Jin, palladium, platinum etc.
Structure in Fig. 8 B further comprises thick material layer to serve as the substrate matrix (handle substrate) 825 for keeping structural integrity during the removing of original principle 820.Substrate layer (handle layer) 825 can, by known materials, comprise that thermosetting polymer forms.
Structure in Fig. 8 C shows the original principle 820 of removing.In preferred embodiments, peel ply for example is dissolved in hydrofluoric acid (HF), removes original principle and stay very thin si membrane.Can be by reactive ion etching (RTE.) by this Film Fractionation or remove.These methods are known.
In Fig. 8 D, by well-known process by photoresist layer deposition, expose (expose) and video picture (develop) with generation source and drain electrode pattern.
Fig. 8 E shows by knowing for generation of source 860 and the KI KI etching of leaking 870 contacts and is transferred to for example pattern on gold of acene growth table surface layer 815.
Fig. 9 discloses the step for preparing the method for the FET with GNR passage of the present invention.
embodiment 1:
Length is can the grow parallel band of the same widths of separating by the band of the arest neighbors (nn) on narrow gap and appropriate surfaces of the pentacene molecule more than 1.5nm just.In fact the pentacene molecule is parallel to surface and in fact places perpendicular to the direction of band with its major axis, shown in following Fig. 1 obtained from people such as [, Phys.Rev.B75,085309 (2007)] Kafer D..This specific pattern is presented at the pentacene molecule of self assembly on Au (111) surface, but other surface of selecting advisably also is used in the similar pentacene structure of device production growth period, preferably insulating surface or removable surface after a while.The deposition of pentacene molecule can be used and be similar to this area (people such as Dimitrakopoulos, J.Appl.Phys.J.of Appl.Phys., 80, 2501-2508, (1996) " Molecular beam deposited thin films of pentacene for organic field effect transistor applications ", with people such as Dimitrakopoulos, Science, 283, 822-824, (1999) " Low voltage organic transistors on plastic comprising high-dielectric constant gate insulators ") described molecular beam deposition process carries out.Pentacene is put into to the resistance heated effusion cell, and cross the lower heating of vacuum (P<1E-7 holder or P<1E-9 holder respectively) to produce the molecular beam of pentacene molecule high or ultra.Be placed on this bundle front and control the temperature of matrix by the stromal surface by suitable, the technical staff can deposit the pentacene molecular monolayer with the capable self assembly of unimolecule, as shown in Figure 2.The schematic diagram that this pentacene unimolecule is capable is shown in Fig. 3.
On appropriate surfaces, after growth, should use ultraviolet ray (UV) radiation or electron beam (e-bundle) to process crosslinked (key) between the nn pentacene molecule to produce arrangement this self assembly pentacene unimolecule is capable.At the temperature of selecting in wisdom, radiation treatment is with respect to without radiation, simple thermal treatment is preferred because depend on environment and with the interaction of matrix, pentacene probably evaporated by just being heated to 150-300 ℃ before crosslinked beginning.At the temperature of the sublimation temperature lower than pentacene after radiation treatment, some crosslinked should be along same band (row of pentacene molecule) random formation between adjacent molecule.Now, the large scale of gained supermolecule (by with covalent bond, many pentacene molecules being linked together and prepare) does not allow that it distils from matrix.Fig. 4 schematically describes this crosslinked pentacene oversubscription subband.Heat this supermolecule (as selection in UHV or inert atmosphere at very high temperature, expose combination with UV) result be the complete network (stable) that produces the aromatics key, this is that the result of (loss hydrogen atom) is decomposed in adjacent pentacene molecule edge.For example, in the situation that inert atmosphere (Ar or other rare gas), with respect to crosslinked under vacuum/polymerization, allow higher crosslinked/the polymerization technique temperature because the distillation of initial polymerization segment is more difficult under inert gas pressure.Due to this crosslinked/polymerization, can form the graphene nanobelt (this GNR is depicted schematically in Fig. 5) that width equals pentacene length.
Be expected at continuation radiation treatment at the temperature higher than initial crosslinking process step and will push reaction to the heat power stable state, this can be that the supermolecule formed in than the initial low-temp radiating step by simple heating forms formation Graphene band at the temperature that the required temperature of graphene nanobelt is lower.
If the stromal surface for the capable calm self assembly of pentacene molecule does not insulate, but conduction, the situation as the Au for above-mentioned embodiment (111) surface, must convert graphene nanobelt dielectric substrate to and not destroy its structure.This can carry out as follows: at first insulating materials 805 is deposited on to GNR upper, for example deposits the NFC based on polycarboxylated styrene of 10nm, its wetting Graphene surface (spreading in above them), deposit HfO by ald (ALD) thereafter 2second than thick dielectric layer, [referring to the people such as Farmer D.B, Nano Lett.9,4474, (2009)] as described in the prior art.Then depositing metal layers and by this layer pattern to form the expection transistorized metal gate 850 of GNR (Fig. 8 A).This is equivalent to the step 910 in the flow chart of Fig. 9.
Thick material layer be molded on previous matrix to serve as substrate wafer (handle wafer) 825 (Fig. 8 B) thereafter.This is equivalent to the step 920 in the flow chart of Fig. 9.
Then by by its etching or by using peel ply (Fig. 8 C), Au (111) surface 815 growths original principle 820 thereon being removed (this is equivalent to the step 930 in the flow chart of Fig. 9).
After this step, can be by Au patterning (this is equivalent to the step 940 in the flow chart of Fig. 9) to form transistorized source and drain electrode (860,870).With reference to figure 8D and 8E.Use KI (KI) etchant (this is equivalent to the step 950 in the flow chart of Fig. 9), method well known in the art.This stays the graphene nano tape channel between these electrodes.
embodiment 2:
Can use with a difference method of embodiment 1: the pentacene molecule is replaced to (Fig. 7) with the also benzene molecular aphthacene of 5 fused aromatic rings with four fused aromatic rings rather than pentacene.This can produce even the GNR shorter than pentacene (therefore having even wider band gap).
embodiment 3:
Can use with a difference method of embodiment 1: the pentacene molecule is replaced to (Fig. 7) with the also benzene molecular anthracene of 5 fused aromatic rings with 3 fused aromatic rings rather than pentacene.This can produce even the GNR shorter than aphthacene (therefore having even wider band gap).
Based on present disclosure, the of the present invention optional embodiment that those skilled in the art can envision is in inventor's expectation.

Claims (49)

1. a Graphene band, its width is less than 3nm.
2. a Graphene band, its width is less than 1.5nm.
3. a Graphene band, its width is less than 1nm.
4. according to the Graphene band of claim 1, one of the width of wherein being with is following size: 2 length that condense phenyl ring together, 3 length that condense phenyl ring together, 4 length that condense phenyl ring together, with the length of phenyl ring together with 5 condense.
5. according to the Graphene band of claim 1, wherein being changed to of thickness is less than 1 dust.
6. according to one or more Graphene bands of claim 2, wherein the edge of band is parallel to each other.
7. one or more Graphene bands, wherein surface of each band contacts with the surface physics of matrix.
8. according to one or more Graphene bands of claim 4, its mesostroma is monocrystalline.
9. according to one or more Graphene bands of claim 4, its mesostroma is that monocrystalline the surface of reproducing matrix have the row of one-way orientation with formation.
10. according to one or more Graphene bands of claim 4, its mesostroma is non-polar substrate.
11., according to one or more Graphene bands of claim 4, its mesostroma causes the surface for monocrystalline.
For example, 12., according to one or more Graphene bands of claim 4, when its mesostroma causes approaching (Van der Waals bond length) matrix when precursor is placed in, the broadest surface of Graphene band precursor becomes and the matrix plane-plane contact.
13. according to one or more bands of claim 12, wherein precursor be following one or more: anthracene, naphthalene, aphthacene and pentacene.
14. what have at least one armchair edge is less than the wide Graphene band of 10nm.
15., according to the Graphene band of claim 14, it is wide that it is less than 3nm.
16., according to the Graphene band of claim 14, it is wide that it is less than 1.5nm.
17., according to the Graphene band of claim 14, it is wide that it is less than 1nm.
18. the Graphene band according to claim 14, one of the width of wherein being with is following size: 2 length that condense phenyl ring together, 3 length that condense phenyl ring together, 4 length that condense phenyl ring together, with the length of phenyl ring together with 5 condense.
19., according to the Graphene band of claim 14, wherein being changed to of thickness is less than 1 dust.
20., according to one or more Graphene bands of claim 16, wherein the edge of band is parallel to each other.
21. one or more Graphene bands, its surface with armchair edge and each band contacts with the surface physics of matrix.
22., according to one or more Graphene bands of claim 21, its mesostroma is monocrystalline.
23., according to one or more Graphene bands of claim 21, its mesostroma is that monocrystalline and stromal surface have the lax direction orientation produced by surface.
24., according to one or more Graphene bands of claim 21, its mesostroma is non-polar substrate.
25., according to one or more Graphene bands of claim 21, its mesostroma causes the surface for monocrystalline.
26., according to one or more Graphene bands of claim 21, its mesostroma causes the broadest surface of Graphene band precursor when being placed on matrix by precursor to become and stromal surface-Surface Contact.
27. according to one or more Graphene bands of claim 26, wherein precursor be following one or more: anthracene, naphthalene, aphthacene and pentacene.
28. field-effect transistor (FET) structure, it comprises:
Matrix;
Be placed in the passage with one or more nanobelts on matrix, wherein each nanobelt has width and the armchair edge that is less than 10nm;
Gate insulator on passage;
Grid on gate insulator;
Source electrode on the source of passage; With
Drain electrode on the leakage side of passage.
29. prepare the method for Graphene band, it comprises step:
A. one or more poly-aromatic hydrocarbon (PAH) precursors are placed on matrix;
B. UV light is applied to PAH upper until form one or more intermolecular linkages between adjacent PAH molecule; With
C. heat is applied on the PAH molecule to number to improve the intermolecular linkage formed to produce the Graphene band.
30., according to the method for claim 29, wherein precursor is the acene class.
31. according to the method for claim 29, wherein precursor be following one or more: anthracene, naphthalene, aphthacene and pentacene.
32., according to the method for claim 29, wherein UV light has the wavelength of 200-500nm.
33., according to the method for claim 29, wherein UV light has the wavelength of 290-350nm.
34., according to the method for claim 29, the heat of wherein applying in step 1c provides together with UV.
35. according to the method for claim 29, wherein hot with one or more application in following methods: constant function, step function, the step function with temperature of one or more increases, and linear temperature rises.
36., according to the method for claim 29, its mesostroma has the one-way orientation with respect to molecule deposition.
37. according to the method for claim 36, wherein one-way orientation be following one or more: the striated surface pattern of crystallization linear orientation, surface-rendering and manufacture.
38., according to the method for claim 29, its mesostroma is monocrystalline.
39., according to the method for claim 29, its mesostroma is that monocrystalline and stromal surface have the direction orientation limited by crystal.
40., according to the method for claim 29, its mesostroma is non-polar substrate.
41., according to one or more Graphene bands of claim 29, its mesostroma causes when being placed on matrix by precursor, the broadest surface of PAH becomes and stromal surface-Surface Contact.
42. prepare the method for field-effect transistor (FET), it comprises the following steps:
Produce the passage of Graphene band by carrying out following steps:
A. one or more poly-aromatic hydrocarbon (PAH) precursors are placed on the first matrix, described the first apposition is on the second matrix;
B. UV light is applied to PAH upper until form one or more intermolecular linkages between adjacent PAH molecule; With
C. heat is applied on the PAH molecule to number to improve the intermolecular linkage formed to produce the Graphene band; By the gate insulator dielectric deposition on passage;
By gate pattern on the gate insulator medium;
Carrier layer is cast on grid to serve as substrate wafer;
Remove the second matrix; With
By the first matrix patterning to serve as source and drain electrode to form field-effect transistor.
43., according to the method for claim 42, wherein the first matrix is conduction.
44. according to the method for claim 42, wherein the first matrix for the conduction and in following material, one or more form: gold, platinum, palladium and titanium.
45. a device architecture, it has two or more Graphene bands with non-conductive matrix surface-Surface Contact, and wherein each band has the width and each band that are less than 3nm and has edge parallel to each other.
46., according to the three terminal device structure of claim 45, it further comprises:
Physical connection is at the lip-deep grid conductive connection of non-conductive matrix of the surface opposite contacted with band;
Be connected electrically in the first contact on the first end of one or more bands; With
Be connected electrically in the second contact on the second end of one or more bands.
47. the plane of two or more Graphene bands, wherein each plane has the band that two or more width are less than 3nm, and each band has edge parallel to each other, and one of them plane has the Graphene band with non-conductive matrix surface-Surface Contact.
A 48. device architecture, it has two or more Graphene bands with non-conductive matrix surface-Surface Contact, wherein each band has the width that is less than 3nm, and each band has edge parallel to each other, described device architecture has the first and second zones adjacent one another are, wherein first area be N-shaped doping and second area be the p-type doping.
49., according to the two-terminal devices structure of claim 1, it further comprises:
Be connected electrically in the first contact on the N-shaped doped region; With
Be connected electrically in the second contact on the p-type doped region.
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