CN101993035A - Switch element for graphene sodium electromechanical system - Google Patents
Switch element for graphene sodium electromechanical system Download PDFInfo
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- CN101993035A CN101993035A CN2009100913964A CN200910091396A CN101993035A CN 101993035 A CN101993035 A CN 101993035A CN 2009100913964 A CN2009100913964 A CN 2009100913964A CN 200910091396 A CN200910091396 A CN 200910091396A CN 101993035 A CN101993035 A CN 101993035A
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Abstract
The invention discloses a switch element for a graphene sodium electromechanical system, which comprises a U-shaped trench structure, two metal electrodes, a contact electrode, a substrate and a graphene strip, wherein the two metal electrodes are formed on the end part of the two sides of the U-shaped trench structure and serve as source electrodes; the contact electrode is formed in the center of the trench bottom face of the U-shaped trench structure and serves as a drain electrode; the substrate serves as a grid electrode, and an insulation layer is arranged between the source electrode and the grid electrode and an insulation layer is arranged between the drain electrode and the grid electrode; and the two ends of the graphene strip are fixed on the two source electrodes, the graphene strip is suspended on the drain electrode, and the graphene strip is connected or disconnected with the drain electrode when deforming. In the invention, the switch element can be minimized, which creates a condition for higher-grade integration of the elements of the kind and is very favorable for the integration of elements.
Description
Technical field
The present invention relates to receive Mechatronic Systems (NEMS) technical field, relate in particular to a kind of Graphene and receive the Mechatronic Systems switching device.
Background technology
The Mechatronic Systems (NEMS) of receiving is new ideas that propose at the beginning of 21 century, and its characteristic size based on the device and the system of nanoscale structures new effect, is the development of MEMS (MEMS) technology 1 to 100nm, be combined into principal character with electromechanics.But, the characteristic size of MEMS is generally in micron dimension, its most characteristic in fact also is based on the physical basis under the macro-scale, reached nanometer scale and receive the characteristic size of Mechatronic Systems (NEMS), effect such as scale effect, skin effect etc. that some are new highlight, and operation principle and performance effect etc. has the different of essence with MEMS.In essence, the NEMS technology has been the important component part and the direction of nanosecond science and technology, in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people touched very wide application prospect is arranged all.
General traditional mems switch device adopts structure as shown in Figure 1, comprises three parts: 1) mechanical movable part---elastic cantilever (or crossbeam), for example insulating film material such as silicon nitride; 2) electric driver part---two parallel capacitor boards or coil; 3) signal line---contact point and lead-in wire.Wherein, last capacitor board and elastic cantilever (or crossbeam) are fixed together, and the upper contact in the signal line also is fixed together with elastic cantilever (or crossbeam).
The operation principle of traditional mems switch device is the static driving switch.In static driven MEMS switch, voltage makes positive and negative accumulation on two parallel capacitor boards, thereby the generation electrostatic attraction can make cantilever generation deformation two contacts are communicated with or shutoff by the size of regulating and control electrostatic attraction, and realize on.Little contact force of traditional MEMS switch is from tens to the little newton of hundreds of, and its basic electricity performance mainly is contact resistance, breakdown voltage, heat dissipation and the surface damage etc. in this scope.Its switch performances depends on the mechanical performance and the size of devices of cantilever material fully.For example: the mechanical strength of film cantilever insulating materials such as () silicon nitrides is high more, and toughness is strong more, and the speed of switch is just fast more, but cut-in voltage is also high more simultaneously; The film cantilever is thin more, and cut-in voltage is more little, but switching speed can reduce.
From modern development of integration technology need, size of devices becomes littler and littler, the integrated device count of unit are is more and more, operating efficiency can improve, energy consumption reduces, cost of manufacture also reduces.For traditional NEMS switching device, the characteristic size of device can be subjected to the restriction of material, structure and the process technology of device.For example, traditional cantilevered switch designs above-mentioned, the limit of the thickness of its cantilever approximately is tens nanometers.Again little, existing process technology does not also reach requirement, and success rate is extremely low, the poor performance of device.Generally speaking, traditional mems switch device is given miniaturization of devices and the integrated difficulty of bringing because the design of self limits, and device size is difficult to do little.
Graphene is one of the primary study object in physics and materialogy field in recent years.It is strict two dimensional crystal, by sp
2The hydridization carbon atom bonding and have a cellular two-dimensional structure of hexagonal lattice.Although Graphene developing history short (beginning in 2004), yet its excellent physical property and potential application prospect have caused the extensive concern on physics circle and chemical boundary, become behind the CNT another research focus in the Condensed Matter Physics and material science.Graphene has two-dimension plane structure, high specific area (2620m
2g
-1), and ultrathin (0.34nm), extremely superior electricity, mechanical property are the materials that has high mechanical properties in the known materials.These characteristics have determined that Graphene is a kind of natural NEMS device candidate material.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of Graphene to receive the Mechatronic Systems switching device, realizing miniaturization of devices, and is beneficial to the integrated of device.
(2) technical scheme
For achieving the above object, the invention provides a kind of Graphene and receive the Mechatronic Systems switching device, comprising:
One U-shaped groove structure;
Be made in two metal electrodes of this U-shaped groove structure dual-side end, this metal electrode is as source electrode;
Be made in a contact electrode at this U-shaped groove structure ditch inner bottom surface center, this contact electrode is as drain electrode;
Substrate has an insulating barrier as grid between source electrode and grid and drain electrode and the grid;
Two ends are individually fixed in a Graphene band of two source electrodes, and this Graphene band is suspended on the drain electrode, are communicated with or turn-off with drain electrode when this Graphene band generation deformation.
In the such scheme, described Graphene band forms an electric capacity with drain electrode, and its deformation quantity is regulated and control by grid voltage.
In the such scheme, described Graphene band and drain electrode are respectively two contacts, and the size by the regulation and control grid voltage can make Graphene band generation deformation, makes the Graphene band be communicated with or turn-off with drain electrode, the switching function of realization switching device.
In the such scheme, two source electrodes are fixed at described Graphene band two ends, metal electrode as source electrode can form the Metal Contact conduction with the Graphene band on the one hand, the Graphene band can be fixed as the metal electrode of source electrode on the other hand, forms the mechanics stable structure.
In the such scheme, described insulating barrier adopts high k sull to be made.
In the such scheme, described high k sull adopts Al
2O
3, HfO
2Or ZrO
2
(3) beneficial effect
From technique scheme as can be seen, Graphene provided by the invention is received the Mechatronic Systems switching device and is compared with traditional mems switch device, has the following advantages:
The thickness of first and second dimension Graphene band has only 0.34nm, compare with the thickness of traditional film cantilever and to have reduced by one to two order of magnitude, realize miniaturization of devices, thereby be the integrated condition of having created of the higher degree of this class device in the future, be very beneficial for the integrated of device.
The second, owing to the extremely superior mechanical performance of Graphene, can predict it and have better performance, for example high switching speed, low turn-on voltage etc. as switching device.
Three, because the electric conductivity of Graphene is very good, and the ability of loaded current is best in the known materials, the life-span that can improve the saturation current and the device of switching device as two contacts with Graphene and metal material.
Description of drawings
Fig. 1 is the structural representation of traditional MEMS switching device;
Fig. 2 is that Graphene provided by the invention is received the structural representation of Mechatronic Systems switching device.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention utilizes two-dimentional Graphene to substitute traditional insulating material film cantilever, consider physical dimension and its physical characteristic of graphite material, reach the non-behavior that is same as the body material that material shows under nanoscale, Graphene NEMS switching device provided by the invention as shown in Figure 2.
Fig. 2 is that Graphene provided by the invention is received the structural representation of Mechatronic Systems switching device, and this Graphene is received the Mechatronic Systems switching device and comprised:
One U-shaped groove structure;
Be made in two metal electrodes of this U-shaped groove structure dual-side end, this metal electrode is as source electrode;
Be made in a contact electrode at this U-shaped groove structure ditch inner bottom surface center, this contact electrode is as drain electrode;
Substrate has an insulating barrier as grid between source electrode and grid and drain electrode and the grid;
Two ends are individually fixed in a Graphene band of two source electrodes, and this Graphene band is suspended on the drain electrode, are communicated with or turn-off with drain electrode when this Graphene band generation deformation.
The Graphene band forms an electric capacity with drain electrode, and its deformation quantity is regulated and control by grid voltage.Graphene band and drain electrode are respectively two contacts, and the size by the regulation and control grid voltage can make Graphene band generation deformation, makes the Graphene band be communicated with or turn-off with drain electrode, the switching function of realization switching device.Two source electrodes are fixed at Graphene band two ends, and the metal electrode as source electrode can form the Metal Contact conduction with the Graphene band on the one hand, the Graphene band can be fixed as the metal electrode of source electrode on the other hand, forms the mechanics stable structure.
Further include insulating barrier between source electrode and grid, drain electrode and the grid, this insulating barrier adopts high k sull to be made.High k sull generally can adopt Al
2O
3, HfO
2Or ZrO
2Deng.
Refer again to Fig. 2, in structure shown in Figure 2, the outer both sides of groove make two metal electrodes respectively as source electrode, make a contact electrode in the ditch as drain electrode, and substrate is a grid.Two sections two metal electrodes (source electrode) that are fixed on both sides of Graphene band are suspended on the contact electrode (drain electrode).Its design feature is that the Graphene band is suspended on the contact electrode (drain electrode), and electric capacity of contact electrode (drain electrode) formation, and its deformation quantity is regulated and control by grid voltage.In the Graphene NEMS switching device of the present invention's design, the contact electrode (drain electrode) in Graphene band and the ditch is respectively two contacts.Size by the regulation and control grid voltage can make graphene strips band generation deformation that it is communicated with contact electrode (drain electrode) in the ditch or turn-off, thus the realization on.Graphene band two ends are fixing with metal electrode (source electrode), are used on the one hand forming Metal Contact (conduction) with Graphene, on the other hand the Graphene band fixed, and form the mechanics stable structure.Insulating barrier between source/grid, the leakage/gate electrode adopts high k oxide (as Al
2O
3, HfO
2, ZrO
2Deng) film, with the longitudinal size that reduces device, reduce leakage current, improve the stability of device simultaneously.
The characteristics of Graphene NEMS switching device structure provided by the invention are mainly reflected in the following aspects:
A), use Graphene on the core material.This is to use first in the world;
B), on the structure of device, designed a kind of novel NEMS switching device according to the geometry and the physical characteristic of Graphene.The design of this design and the traditional switching device (see figure 2) that is very different;
C), on the performance of device, because extremely superior mechanical property and the yardstick (two-dimensional material of Graphene, tailorability), with the design of the structure of device itself, it is the NEMS device of core material with the semiconductor/metal compound film that size therebetween and performance thereof all are better than traditional;
D), on the other hand, this class device itself also is a fabulous research platform, also can increase our understanding to grapheme material itself and its potential application facet by power, electricity, the optical property of studying device.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a Graphene is received the Mechatronic Systems switching device, it is characterized in that, comprising:
One U-shaped groove structure;
Be made in two metal electrodes of this U-shaped groove structure dual-side end, this metal electrode is as source electrode;
Be made in a contact electrode at this U-shaped groove structure ditch inner bottom surface center, this contact electrode is as drain electrode;
Substrate has an insulating barrier as grid between source electrode and grid and drain electrode and the grid;
Two ends are individually fixed in a Graphene band of two source electrodes, and this Graphene band is suspended on the drain electrode, are communicated with or turn-off with drain electrode when this Graphene band generation deformation.
2. Graphene according to claim 1 is received the Mechatronic Systems switching device, it is characterized in that, described Graphene band forms an electric capacity with drain electrode, and its deformation quantity is regulated and control by grid voltage.
3. Graphene according to claim 1 is received the Mechatronic Systems switching device, it is characterized in that, described Graphene band and drain electrode are respectively two contacts, size by the regulation and control grid voltage can make Graphene band generation deformation, make the Graphene band be communicated with or turn-off, the switching function of realization switching device with drain electrode.
4. Graphene according to claim 1 is received the Mechatronic Systems switching device, it is characterized in that, two source electrodes are fixed at described Graphene band two ends, metal electrode as source electrode can form the Metal Contact conduction with the Graphene band on the one hand, the Graphene band can be fixed as the metal electrode of source electrode on the other hand, form the mechanics stable structure.
5. Graphene according to claim 1 is received the Mechatronic Systems switching device, it is characterized in that described insulating barrier adopts high k sull to be made.
6. Graphene according to claim 5 is received the Mechatronic Systems switching device, it is characterized in that, described high k sull adopts Al
2O
3, HfO
2Or ZrO
2
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184849A (en) * | 2011-04-27 | 2011-09-14 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing graphene-based field effect transistor |
| CN102856185A (en) * | 2012-10-11 | 2013-01-02 | 中国科学院上海微***与信息技术研究所 | Method for preparing high-k gate dielectric film on graphene surface |
| CN103476582A (en) * | 2011-04-18 | 2013-12-25 | 国际商业机器公司 | Structure and method of making graphene nanoribbons |
| CN103964364A (en) * | 2013-01-29 | 2014-08-06 | 中国科学院微电子研究所 | Micro-nano electrostatic force switch and manufacturing method thereof |
| US9070578B2 (en) | 2013-09-12 | 2015-06-30 | International Business Machines Corporation | Electromechanical switching device with 2D layered material surfaces |
| CN111693201A (en) * | 2020-06-11 | 2020-09-22 | 南方科技大学 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
| CN111986956A (en) * | 2020-08-12 | 2020-11-24 | 华东交通大学 | Contact control switch is received to graphite alkene |
| CN112880546A (en) * | 2021-01-11 | 2021-06-01 | 于孟今 | Device and system for monitoring optical fiber distortion |
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| US20090020399A1 (en) * | 2007-07-19 | 2009-01-22 | Samsung Electronics Co., Ltd. | Electromechanical switch and method of manufacturing the same |
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| US20090020399A1 (en) * | 2007-07-19 | 2009-01-22 | Samsung Electronics Co., Ltd. | Electromechanical switch and method of manufacturing the same |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103476582A (en) * | 2011-04-18 | 2013-12-25 | 国际商业机器公司 | Structure and method of making graphene nanoribbons |
| CN103476582B (en) * | 2011-04-18 | 2016-09-14 | 国际商业机器公司 | For preparing the structures and methods of graphene nanobelt |
| CN102184849A (en) * | 2011-04-27 | 2011-09-14 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing graphene-based field effect transistor |
| CN102184849B (en) * | 2011-04-27 | 2013-03-20 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing graphene-based field effect transistor |
| CN102856185A (en) * | 2012-10-11 | 2013-01-02 | 中国科学院上海微***与信息技术研究所 | Method for preparing high-k gate dielectric film on graphene surface |
| CN103964364A (en) * | 2013-01-29 | 2014-08-06 | 中国科学院微电子研究所 | Micro-nano electrostatic force switch and manufacturing method thereof |
| CN103964364B (en) * | 2013-01-29 | 2016-12-28 | 中国科学院微电子研究所 | Micro-nano electrostatic force switch and manufacturing method thereof |
| US9070578B2 (en) | 2013-09-12 | 2015-06-30 | International Business Machines Corporation | Electromechanical switching device with 2D layered material surfaces |
| CN111693201A (en) * | 2020-06-11 | 2020-09-22 | 南方科技大学 | Tunneling type MEMS (micro-electromechanical system) air pressure sensor and application thereof |
| CN111986956A (en) * | 2020-08-12 | 2020-11-24 | 华东交通大学 | Contact control switch is received to graphite alkene |
| CN112880546A (en) * | 2021-01-11 | 2021-06-01 | 于孟今 | Device and system for monitoring optical fiber distortion |
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|---|---|
| CN101993035B (en) | 2013-06-05 |
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