CN103474501B - A kind of selective emitter gallium antimonide infrared cell and preparation method thereof - Google Patents
A kind of selective emitter gallium antimonide infrared cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of selective emitter gallium antimonide infrared cell and preparation method thereof, comprise that zinc diffusion method is prepared PN junction, prepared electrode, surface passivation, prepare the steps such as antireflection layer; Feature adopts zinc-gallium alloy to carry out sealed type zinc as diffuse source to be diffused in the zinc concentration curve being formed in N-type gallium antimonide wafer and only have single diffusion front.Adopt method of the present invention effectively can contain the high concentration diffusion layer of the rear gallium antimonide wafer surface of diffusion, after solving conventional diffusion process, accurately corrode unmanageable problem; Adopt method of the present invention not need to pass into any protective gas in the process preparing PN junction, reduce the cost of gallium antimonide battery; Adopt selective emitter gallium antimonide infrared cell of the present invention prepared by the inventive method, single diffusion front zinc curve negotiating diffusion of its inside is directly formed, without the need to adopting corrosion process, therefore its electricity output performance is stablized, and can be used in infrared electro converting system as electric energy conversion element.
Description
Technical field
The invention belongs to infrared cell technical field, be specifically related to selective emitter gallium antimonide infrared cell and preparation method thereof.
Background technology
The energy gap of gallium antimonide is 0.72eV, and the near-infrared radiation that fuel combustion produces directly can be converted to electric energy by the infrared cell adopting gallium antimonide wafer to prepare.When ignition temperature is about 1200 DEG C, the unit area output of battery can reach 1.5 ~ 2W/cm
2.Adopt gallium antimonide battery as the infrared electro conversion system of electric energy output element, can be used as military individual soldier's power supply, military communication power supply and geologic prospect, institute of protecting a forest, field study power supply, there is the advantages such as light, quiet.
According to US Patent No. 005091018A introduction, gallium antimonide infrared cell preparation process generally include wafer cleaning, preparation surrounding diffusion impervious layer, zinc diffusion for P-N junction, depositing electrode, prepare the steps such as antireflective coating.Wherein, adopt zinc diffusion method to prepare P-N junction the most key, all the other steps are common semiconductor processes.Existing gallium antimonide infrared cell zinc diffusing method used mainly adopts the open type diffusion method of zinc-antimony alloy, and this technique will form the zinc concentration curve with two diffusion fronts at gallium antimonide inner wafer.In this type diffusion profile, first diffusion front region of close wafer surface is comparatively dark and zinc concentration is very high, higher zinc concentration can make to form good ohmic contact between upper surface electrode and gallium antimonide wafer, but in the light area of battery, higher zinc concentration can reduce the life-span of photo-generated carrier, reduce the quantum efficiency of battery, short circuit current is declined.Therefore, after preparing electrode, need to adopt corrosive liquid accurately to be eroded in first diffusion front region near wafer surface, battery just can reach about 70% in the averaged spectrum responsiveness of near infrared band.And this corrosion process is very difficult to control, in the US Patent No. 005091018A and US005217539A of the gallium antimonide infrared cell technique institute foundation produced in batches, like this this corrosion process is described: " corrosion process of emitter is very consuming time, and is not easy automatic control.Every sheet battery all need burn into clean, test, again burn into clean again, again burn into test again, until the spectral responsivity testing out battery rises to setting.This corrosion process needs to repeat many times, and the performance of battery can reach requirement, if once corrode too much, so the open circuit voltage of battery can decline sharply, if corrosion is too shallow, the optimum spectral responsivity of battery does not reach again.”
According to US Patent No. 005217539A introduction; in order to change corrosion process shortcoming rambunctious in battery preparation technique process; JXC company of the U.S. develops two step diffusion methods; namely first shallow diffusion is carried out at battery surface; then the light part of battery surface is protected with photoresist; out carry out secondary by needing the partial denudation of depositing electrode deeply to spread; what carry out below such battery upper surface electrode is dark doping; good ohmic contact can be formed with gallium antimonide wafer; battery surface light accepting part divides what carry out to be shallow doping, and quantum efficiency is higher.Gallium antimonide battery efficiency prepared by these class methods is higher, even if but battery surface light part adopts shallow diffusion, because diffusion way remains the open type of employing zinc-antimony alloy, the diffusion layer that wafer surface still has high concentration exists, and can not tackle the problem at its root.Further, when adopting this technique to prepare gallium antimonide battery, one diffusion and photoetching process can be increased, thus make the preparation cost of battery increase.
As can be seen here, when large-scale production gallium antimonide infrared cell, the zinc diffusion profile pattern of gallium antimonide wafer surface has material impact to battery performance.
Summary of the invention
The object of the invention is to propose a kind of selective emitter gallium antimonide infrared cell and preparation method thereof, to simplify the unmanageable etching process after conventional one step zinc diffusion method prepares battery, the electricity output performance often criticizing battery is stablized.
The preparation method of selective emitter gallium antimonide infrared cell of the present invention, comprises gallium antimonide wafer cleaning, front wafer surface periphery prepares silicon dioxide diffusion barrier, adopts zinc diffusion method to prepare PN junction, remove the back side and periphery P type layer, prepare electrode, surface passivation, prepare antireflection layer; It is characterized in that: adopt zinc-gallium alloy to carry out sealed type zinc as diffuse source and be diffused in the zinc concentration curve being formed in N-type gallium antimonide wafer and only there is single diffusion front, specifically comprise the steps:
The first step, will be 2 ~ 7 × 10 containing tellurium Te concentration
17cm
-3the N-type gallium antimonide wafer in <100> crystal orientation is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, then remove the oxide of wafer surface by quality than the watery hydrochloric acid that concentration is 5 ~ 20%, dry up with nitrogen after finally cleaning in deionized water;
Second step, the silicon dioxide layer that using plasma chemical vapor deposition one deck 0.11 μm is thick on wafer, then photoetching process is adopted to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area corrosive liquid is soaked removal, obtain the gallium antimonide wafer that can be used to carry out zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid removing silicon dioxide is conventional formulation, namely by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
3rd step, the diffusion preparation gallium antimonide wafer prepared in second step and diffuse source zinc-gallium alloy are put into the quartz ampoule of diffusion furnace, be evacuated to 5 ~ 10Pa, passing into flow is that argon gas to the quartz ampoule internal pressure of 1 ~ 3L/min returns to an atmospheric pressure; Then close argon gas valve to continue to be evacuated to 5 ~ 10Pa, close the vacuum state in the valve maintenance quartz ampoule of connection vacuum pump, rise to 450 ~ 500 DEG C with the heating rate of 5 ~ 10 DEG C/min, keep a certain temperature spot 1 ~ 3h in said temperature scope, make zinc fume diffuse into inner wafer; After the pyroprocess maintaining this steady temperature point in diffusion furnace terminates, open diffusion furnace top cover, built-in fan in diffusion furnace is adopted to carry out being quickly cooled to room temperature to terminate diffusion process, take out the gallium antimonide wafer after diffusion afterwards, be the inner N-type gallium antimonide wafer only with single diffusion front zinc curve;
The N-type gallium antimonide front wafer surface only with single diffusion front zinc curve obtained in 3rd step protects by the 4th step, employing spin coating technique with photoresist, immerse proportioning be tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: deionized water 400mL with remove wafer perimeter and the back side P-type layer corrosive liquid in 1 ~ 3min, then with acetone soln soak removal photoresist; Then adopt the method for magnetron sputtering to be prepared into the electrode of battery as substrate: first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1 ~ 10 × 10
-4be heated to 280 DEG C under the vacuum degree condition of Pa, keep 10min; Then define in the front photoetching process of this substrate the region needing depositing electrode, namely expose the region that needs to prepare electrode and photoelectric region will be produced and cover with photoresist, then Pt50nm/Ag250nm is deposited successively as front electrode in the front of this substrate, the thin layer finally adopting stripping-lift-off technology battery front side to be produced photoelectric effect region is removed, and prepares the upper/lower electrode of battery;
5th step, by prepare the gallium antimonide battery after upper/lower electrode put into ammonium sulfide solution soak 5 ~ 10min, carry out surface passivation;
6th step, using plasma chemical vapour deposition technique deposit the silicon nitride layer of one deck 0.15 μm as antireflective coating at battery front side, namely obtain selective emitter gallium antimonide infrared cell.
The preparation method of described zinc-gallium alloy diffuse source is: by containing weight ratio, to be 3% purity be 99.9999% zinc be 97% containing weight ratio, purity be 99.9999% gallium insert in quartz ampoule simultaneously, be evacuated to 5 ~ 10Pa and sealing after, put into heating furnace be heated to 600 DEG C and keep 24h, to make two kinds of elements fully mix, after cooling, namely obtain zinc required for the present invention-Gallium diffusion source.
Adopt selective emitter gallium antimonide infrared cell of the present invention prepared by said method, comprise: the gallium antimonide wafer forming PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, the top of wafer adopts Pt/Ag as positive electrode, and has silicon dioxide antireflection layer at this positive electrode disposed thereon; It is characterized in that: the zinc diffusion layer in this gallium antimonide infrared cell has single diffusion front pattern.
Principle of the present invention is: because the self-diffusion rate of gallium atom in GaSb crystal is than much larger times of the self-diffusion rate of antimony atoms, in high-temperature diffusion process, if do not have gallium atom in diffuse source, the gallium atom so in gallium antimonide wafer just there will be a large amount of situation of overflowing.In this case, zinc atom can be spread by the mode occupying gallium room in gallium antimonide wafer, until when the concentration value that zinc is diffused into gallium room in gallium antimonide is less than its thermal equilibrium value in crystal, just spread by the mode kicking out of gallium atom in lattice, the zinc being undertaken spreading by occupying gallium room like this will form the diffusion zone showing high concentration, and for preparing battery usefully to kick out of the afterbody zinc diffusion zone that gallium atomic way in lattice diffuses to form.Traditional employing zinc-antimony alloy is as the open type diffusion method of diffuse source, reference be that zinc spreads arsenic atom and easily overflows and in diffuse source, enter the method for arsenic element in GaAs, and be that group iii elements gallium easily overflows on the contrary in GaSb crystal, so add antimony atoms in diffuse source to diffusion profile not great impact.And adopt in the preparation method of selective emitter gallium antimonide infrared cell of the present invention with the sealed type diffusion method of zinc-gallium alloy diffuse source, due to the existence of the gallium atom in diffuse source, the effective spilling having contained gallium atom in GaSb crystal in diffusion process, thus contained the generation of high surface levels zinc diffusion layer.
Based on above principle, zinc-the gallium alloy adopted in the present invention as diffuse source sealed type zinc diffusion method and traditional zinc-antimony alloy as diffuse source open type diffusion method compared with, have the following advantages: the high concentration diffusion layer effectively can containing the rear gallium antimonide wafer surface of diffusion, accurately corrode unmanageable problem after solving conventional diffusion process, make the electric property of the gallium antimonide infrared cell produced keep stable; Adopt this zinc diffusing method proposed in the preparation method of selective emitter gallium antimonide infrared cell of the present invention; only to need in the process vacuumized by a small amount of argon gas as flushing gas; and in diffusion process, do not need to pass into any protective gas; therefore, preparation method of the present invention is adopted can also to reduce the preparation cost of gallium antimonide infrared cell.
Adopt selective emitter gallium antimonide infrared cell of the present invention prepared by the inventive method, because single diffusion front zinc concentration curve negotiating of this inside battery directly diffuses to form, and the inner 95% above concentration in region of the zinc diffusion layer of this battery is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve, thus can the photoproduction minority carrier life time of generation current can not be too high and reduce due to doping content, therefore effectively near infrared band photon can be converted to electric energy; And the gallium antimonide inside battery adopting traditional zinc diffusion technology to prepare has the double diffusion forward position zinc curve of high surface levels layer, the high concentration diffusion front on surface must be removed by accurate etch the life-span can improving the few son of photoproduction, the zinc diffusion profile being difficult to control to make the inside battery of different batches to have due to corrosion process is different, the cell output of different batches can be caused unstable, be unfavorable for preparing battery component.
Accompanying drawing explanation
Fig. 1 is the diffusion system sketch needed for sealed type diffusion method of the zinc-gallium alloy adopted in the present invention.
Fig. 2 diffusion profile comparison diagram that to be the present invention's diffusion profile of adopting the sealed type diffusion method of zinc-gallium alloy to obtain and traditional zinc-antimony alloy obtain as the open type zinc diffusion method of diffuse source.
Fig. 3 is the gallium antimonide infrared cell structural representation adopting traditional open type method of diffusion to prepare.
Fig. 4 is the gallium antimonide infrared cell structural representation that the present invention adopts sealed type method of diffusion to prepare.
Fig. 5 is the internal quantum efficiency figure of the gallium antimonide infrared cell that the present invention adopts sealed type method of diffusion to prepare.
Embodiment
Embodiment 1:
Fig. 1 gives the present invention the diffusion system sketch needed for sealed type diffusion method adopting zinc-gallium alloy.Introduce the zinc scattering preparation of the selective emitter gallium antimonide infrared cell in the present embodiment below in conjunction with accompanying drawing, specifically comprise the steps:
The first step, will be 2 ~ 7 × 10 containing tellurium Te concentration
17cm
-3the N-type gallium antimonide wafer in <100> crystal orientation is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, then remove wafer surface oxide with the watery hydrochloric acid that concentration is 5 ~ 20%, dry up with nitrogen after finally cleaning in deionized water;
Second step, on wafer the silicon dioxide layer of using plasma chemical vapor deposition one deck 0.11 μm of thickness, then photoetching process is adopted to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area corrosive liquid is soaked removal, obtain the gallium antimonide wafer that can be used to carry out zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid removing silicon dioxide is conventional formulation, namely by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
3rd step, as shown in fig. 1: the diffusion preparation gallium antimonide wafer 2 prepared in diffuse source zinc-gallium alloy 1 and second step is put into quartz ampoule 3, close the valve 4 connecting argon gas 6, open the valve 5 connecting vacuum pump 7,5 ~ 10Pa is evacuated to quartz ampoule; Then valve-off 5, opens valve 4, passes into argon gas that flow is 1 ~ 3L/min until quartz ampoule internal pressure rises to an atmospheric pressure.Valve-off 4, opens valve 5 and again vacuumizes, and then valve-off 5 is to keep the vacuum state in quartz ampoule; Whole quartz ampoule 3 is all placed in diffusion furnace 8, and the two ends of quartz ampoule should exceed the border 2 ~ 4cm of diffusion furnace, and exceeds part insulation material and fill up; It is long that the two ends of quartz ampoule should not exceed diffusion furnace border, otherwise zinc-gallium steam can be caused in two ends condensation;
4th step, unlatching diffusion furnace, rise to 500 DEG C with the heating rate of 5 ~ 10 DEG C/min, keep said temperature 2h; After this diffusion process terminates, open diffusion furnace top cover, after adopting the built-in fan of diffusion furnace to carry out being quickly cooled to room temperature, take out the gallium antimonide wafer after diffusion;
Fig. 2 gives heating rate 10 DEG C/min, diffusion temperature 500 DEG C, the diffusion profile comparison diagram that the diffusion profile adopting the sealed type diffusion method of zinc-gallium alloy to obtain after diffusion 2h and traditional zinc-antimony alloy obtain as the open type zinc diffusion method of diffuse source.Zinc concentration curve now in gallium antimonide wafer should be in Fig. 2 shown in curve 12, can find, adopts sealed type diffusion method of the present invention to obtain zinc curve and only has single diffusion front; If employing diffuse source is the open type diffusion method of zinc-antimony alloy, when diffusion operating mode is identical, after diffusion, the double diffusion forward position diffusion profile 11 with flex point 10 will be generated.
The N-type gallium antimonide front wafer surface only with single diffusion front zinc curve obtained in 4th step protects by the 5th step, employing spin coating technique with photoresist, immerse proportioning be tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: deionized water 400mL with remove wafer perimeter and the back side P-type layer corrosive liquid in 1 ~ 3min, then with acetone soln soak removal photoresist; Then adopt the method for magnetron sputtering to be prepared into the electrode of battery as substrate: first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1 ~ 10 × 10
-4be heated to 280 DEG C under the vacuum degree condition of Pa, keep 10min; Then define in the front photoetching process of this substrate the region needing depositing electrode, namely expose the region that needs to prepare electrode and photoelectric region will be produced and cover with photoresist, then deposit Pt50nm/Ag250nm successively as front electrode in the front of this substrate, the thin layer finally adopting stripping-lift-off technology battery front side to be produced photoelectric effect region is removed; The upper/lower electrode of battery is prepared by said method;
6th step, put into ammonium sulfide solution carry out passivation 5 ~ 10min, to reduce the dangling bonds of wafer surface by preparing the gallium antimonide battery after electrode;
7th step, employing quantum efficiency tester are measured, and can obtain the quantum efficiency of battery.Fig. 5 is the internal quantum efficiency figure of the gallium antimonide infrared cell that the present invention adopts the sealed type diffusion method of zinc-gallium alloy to prepare.As shown in Figure 5, can find, battery prepared by the present invention all has good spectral responsivity at the wave band of 300 ~ 1700nm, and near infrared band, its quantum efficiency reaches 70 ~ 85%.
Have employed the concentration profile of secondary ion mass spectrometry test zinc in gallium antimonide wafer in embodiments of the invention, measured zinc concentration is single diffusion front, and the above concentration in curvilinear inner 95% region is lower than 10
20cm
-3atoms/cm
-3, such doping content magnitude can not cause a large amount of compounds of the few son of photoproduction, is conducive to preparing gallium antimonide infrared cell.
The preparation method of zinc described in the present invention-gallium alloy diffuse source be adopt containing weight ratio to be 3% purity be 99.9999% zinc with to be 97% purity containing weight ratio be 99.9999% gallium insert in quartz ampoule simultaneously, vacuumize and seal, put into heating furnace be heated to 600 DEG C and keep 24h, to make two kinds of elements fully mix, after cooling, namely obtain zinc required for the present invention-Gallium diffusion source.
Adopt selective emitter gallium antimonide infrared cell of the present invention prepared by said method, comprise: the gallium antimonide wafer forming PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, adopt Pt/Ag as positive electrode above wafer, have silicon dioxide antireflection layer at the disposed thereon of this positive electrode; The inner 95% above concentration in region of zinc diffusion layer of this battery is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve.
Comparative example 1:
If employing diffuse source is the open type diffusion method of zinc-antimony alloy, diffusion temperature is still 500 DEG C, diffusion 2h, and will generate the double diffusion forward position diffusion profile 11 with flex point 10 after diffusion, the battery structure prepared as shown in Figure 3.Wherein the electrode 13 of N-type wafer 19 upper surface is all have dual diffusion front 18 with the top layer zinc diffusion zone 17 of light part 14, the region 16 before the point of interface 15 of two diffusion fronts is needed accurately to corrode to improve quantum efficiency, if do not corroded, the internal quantum efficiency of battery is only 15 ~ 25%, but this corrosion process is very difficult to control, because top layer area with high mercury is very dark, etching time is long, the concentration of corrosive liquid reduces along with the prolongation of etching time, corrosion rate also changes thereupon, the point of interface that accurately will erode to two diffusion fronts is difficult to.In Fig. 3,20 is the bottom electrode of battery.
Fig. 3 is as the traditional gallium antimonide battery structure schematic diagram opened method of diffusion and prepare of the employing of comparing; Fig. 4 is the gallium antimonide battery structure schematic diagram that the present invention adopts sealed type method of diffusion to prepare.As can see from Figure 4, top electrode 21 and light part less than 22 surface region 24 of the N-type wafer 25 that employing sealed type diffusion method in the present invention obtains are all the zinc concentration curves 23 only with single diffusion front, only need adopt ammonium sulfide carry out simple surface passivation can prepare near infrared band internal quantum efficiency 70 ~ 85% gallium antimonide battery; The bottom electrode of battery is for shown in 26; And the electrode 13 of N-type wafer 19 upper surface that the open type diffusion method of employing tradition zinc-antimony alloy as can see from Figure 3 in comparative example 1 obtains is all have dual diffusion front 18 with the top layer zinc diffusion zone 17 of light part 14, needing to carry out accurate corrosion process etches away until it has the pattern identical with curve 23 by the high surface levels layer of light area 14, because corrosion rate and temperature, corrosive liquid concentration are relevant, in corrosion process, corrosive liquid concentration can reduce again gradually, is therefore difficult to realize accurate etching.The curve topographical difference that the inside battery of the different batches adopting above-mentioned existing conventional method to prepare has is comparatively large, and the power output difference of different batches battery can be caused larger.And in the gallium antimonide battery product of the present invention adopting sealed type scattering preparation of the present invention to obtain, single diffusion front zinc concentration curve negotiating diffusion process is directly formed, without the need to adopting accurate corrosion, improve the stability of battery performance output and the controllability of preparation process.
Claims (3)
1. a preparation method for selective emitter gallium antimonide infrared cell, comprises gallium antimonide wafer cleaning, front wafer surface periphery prepares silicon dioxide diffusion barrier, adopts zinc diffusion method to prepare PN junction, remove the back side and periphery P type layer, prepare electrode, surface passivation, prepare antireflection layer; It is characterized in that: adopt zinc-gallium alloy to carry out sealed type zinc as diffuse source and be diffused in the zinc concentration curve being formed in N-type gallium antimonide wafer and only there is single diffusion front, specifically comprise the steps:
The first step, will be 2 ~ 7 × 10 containing tellurium Te concentration
17cm
-3the N-type gallium antimonide wafer in <100> crystal orientation is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, then remove the oxide of wafer surface by quality than the watery hydrochloric acid that concentration is 5 ~ 20%, dry up with nitrogen after finally cleaning in deionized water;
Second step, the silicon dioxide layer that using plasma chemical vapor deposition one deck 0.11 μm is thick on wafer, then photoetching process is adopted to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area corrosive liquid is soaked removal, obtain the gallium antimonide wafer that can be used to carry out zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid removing silicon dioxide is conventional formulation, namely by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
3rd step, the diffusion preparation gallium antimonide wafer prepared in second step and diffuse source zinc-gallium alloy are put into the quartz ampoule of diffusion furnace, be evacuated to 5 ~ 10Pa, passing into flow is that argon gas to the quartz ampoule internal pressure of 1 ~ 3L/min returns to an atmospheric pressure; Then close argon gas valve to continue to be evacuated to 5 ~ 10Pa, close the vacuum state in the valve maintenance quartz ampoule of connection vacuum pump, rise to 450 ~ 500 DEG C with the heating rate of 5 ~ 10 DEG C/min, keep a certain temperature spot 1 ~ 3h in said temperature scope, make zinc fume diffuse into inner wafer; After the pyroprocess maintaining this steady temperature point in diffusion furnace terminates, open diffusion furnace top cover, built-in fan in diffusion furnace is adopted to carry out being quickly cooled to room temperature to terminate diffusion process, take out the gallium antimonide wafer after diffusion afterwards, be the inner N-type gallium antimonide wafer only with single diffusion front zinc curve;
The N-type gallium antimonide front wafer surface only with single diffusion front zinc curve obtained in 3rd step protects by the 4th step, employing spin coating technique with photoresist, immerse proportioning be tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: deionized water 400mL with remove wafer perimeter and the back side P-type layer corrosive liquid in 1 ~ 3min, then with acetone soln soak removal photoresist; Then adopt the method for magnetron sputtering to be prepared into the electrode of battery as substrate: first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1 ~ 10 × 10
-4be heated to 280 DEG C under the vacuum degree condition of Pa, keep 10min; Then define in the front photoetching process of this substrate the region needing depositing electrode, namely expose the region that needs to prepare electrode and photoelectric region will be produced and cover with photoresist, then Pt50nm/Ag250nm is deposited successively as front electrode in the front of this substrate, the thin layer finally adopting stripping-lift-off technology battery front side to be produced photoelectric effect region is removed, and prepares the upper/lower electrode of battery;
5th step, by prepare the gallium antimonide battery after upper/lower electrode put into ammonium sulfide solution soak 5 ~ 10min, carry out surface passivation;
6th step, using plasma chemical vapour deposition technique deposit the silicon nitride layer of one deck 0.15 μm as antireflective coating at battery front side, namely obtain selective emitter gallium antimonide infrared cell.
2. the preparation method of selective emitter gallium antimonide infrared cell as claimed in claim 1, be characterised in that the preparation method of described zinc-gallium alloy diffuse source is: by containing weight ratio, to be 3% purity be 99.9999% zinc be 97% containing weight ratio, purity be 99.9999% gallium insert in quartz ampoule simultaneously, be evacuated to 5 ~ 10Pa and sealing after, put into heating furnace be heated to 600 DEG C and keep 24h, to make two kinds of elements fully mix, after cooling, be required zinc-Gallium diffusion source.
3. the selective emitter gallium antimonide infrared cell adopting method described in claim 1 to prepare, comprise: the gallium antimonide wafer forming PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, the top of wafer adopts Pt/Ag as positive electrode, and has silicon dioxide antireflection layer at this positive electrode disposed thereon; It is characterized in that: the zinc diffusion layer in this gallium antimonide infrared cell has single diffusion front pattern.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5536948A (en) * | 1994-08-23 | 1996-07-16 | Grumman Aerospace Corporation | Infrared detector element substrate with superlattice layers |
| US6005259A (en) * | 1997-09-23 | 1999-12-21 | National Science Council | InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy |
| CN101562210A (en) * | 2008-04-16 | 2009-10-21 | 中国科学院半导体研究所 | GaAs-based InAs/GaSb superlattice infrared photodetector and manufacturing method thereof |
| CN101702414A (en) * | 2009-11-05 | 2010-05-05 | 云南师范大学 | Manufacturing method of semiconductor solar cell |
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