CN103474483A - Back reflection electrode with periodic structure and manufacturing method thereof - Google Patents

Back reflection electrode with periodic structure and manufacturing method thereof Download PDF

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CN103474483A
CN103474483A CN2013104166459A CN201310416645A CN103474483A CN 103474483 A CN103474483 A CN 103474483A CN 2013104166459 A CN2013104166459 A CN 2013104166459A CN 201310416645 A CN201310416645 A CN 201310416645A CN 103474483 A CN103474483 A CN 103474483A
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periodic structure
film
back reflector
layer
glass substrate
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CN103474483B (en
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张晓丹
梁雪娇
赵颖
高海波
侯国付
许盛之
魏长春
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Nankai University
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Abstract

Provided is a back reflection electrode with a periodic structure. The back reflection electrode with the periodic structure comprises a substrate layer, first layer metal film which plays a role of a template, and second layer metal film which plays a role in decoration, wherein the two layers of metal film are metal Ag film or metal Al film or metal Mo film, and the back reflection electrode with the periodic structure is formed and has the function of broadband-spectrum scattering. A manufacturing method of the back reflection electrode with the periodic structure comprises the steps that PS microspheres are assembled through the water bath method, plasma etching is carried out on the PS microspheres through O2, the template effect of the etched polystyrene microspheres is used for obtaining the back reflection electrode with the periodic structure and the function of broadband-spectrum scattering, and the back reflection electrode with the periodic structure serves as a back reflection electrode of a thin film solar cell. The back reflection electrode with the periodic structure and the manufacturing method of the back reflection electrode with the periodic structure have the advantages that due to the fact that the template effect of the polystyrene microspheres and the mode that magnetron sputtering or evaporation is carried out on the metal film are used, manufacturing of the high-scattering back reflection electrode with the periodic structure is achieved, and when the back reflection electrode with the periodic structure is applied to the thin film solar cell, the short-circuit current density and conversion efficiency of the thin film solar cell are improved.

Description

Back reflector of a kind of periodic structure and preparation method thereof
Technical field
The invention belongs to the technology of preparing of the high scattering back electrode of thin film solar cell, back reflector of especially a kind of periodic structure and preparation method thereof.
Background technology
Photovoltaic is as the future source of energy main force, and must significantly raise the efficiency, reduce costs could existence.The silver back reflector is as the important component part of solar cell, and its suede degree characteristic is most important to the performance impact of battery.The metal backing reflecting electrode be most widely used in current hull cell is based on the back reflector of the random matte that the metallic aluminium of suede degree builds in conjunction with silver, the metal back electrode roughness of this method growth is not very large, and the dispersion effect that causes this substrate is not fine.Research shows: for the Si base thin film solar battery (amorphous silicon battery, microcrystal silicon battery and silica-based multi-knot thin film laminated cell) of NIP type, the light trapping effect of back reflector is particularly important on the impact of device performance.The metal backing reflecting electrode structure of suede degree can effectively be reflected back battery by light, increase the light path that is reflected back battery light, thereby effectively strengthen the optical absorption of intrinsic layer, improve short-circuit current density, and then the raising battery efficiency, what is more important, fall into the introducing of light, active layer thickness that can the attenuate battery, this is very important to reducing costs.
Than the metal backing reflecting electrode of random matte, the back reflector of periodic structure causes concern because it has high scattering properties.The preparation method of the back reflector of periodic structure is mainly anodised aluminium (AAO) at present, have a large amount of heat generations and anodised unsteadiness when voltage is greater than 500V in anode oxidation process, it periodically can not well be controlled, and is difficult to make large-sized ' dimple ' shape.Although back reflector prepared by the AAO method has increased the scattering of light to the short wavelength, the short wave response of battery is improved, played the sunken light effect to short-wavelength light, but the sunken light of long wavelength light causes battery not high to the utilance of long wavelength light because its ' dimple ' shape is size-constrained.
Summary of the invention
The present invention seeks to as overcoming the above-mentioned deficiency of prior art, a kind of back reflector that is conducive to improve the periodic structure of the high scattering ratio of having of thin film solar cell performance is provided, the back reflector of this periodic structure can be realized good sunken light effect, make the unabsorbed light of battery obsorbing layer can more be scattered back again battery, increase the light path of light in battery, to reach the raising light utilization efficiency, strengthen the short-circuit current density of battery, and then reach the purpose that improves battery efficiency, and most importantly by controlling preparation technology, can increase the scattering ratio of 400-1500nm wave-length coverage, battery is greatly enhanced to the utilance of light.
Technical scheme of the present invention:
A kind of back reflector of periodic structure, comprise substrate layer, form the first layer metal film of template action and the second layer metal film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A g, Al or Mo film, wherein the ground floor film thickness is 300-1000nm, the thickness of second layer metal film is 100-500nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 50-200 nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 2-10 hour;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 1-5 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, the polystyrene microsphere of the formation individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), after etching, the size of corresponding ethene microballoon is 0.5-4 μ m;
4) on the ethene microballoon after etching, adopt the method for magnetically controlled sputter method or evaporation to deposit the metallic film that ground floor thickness is 300-1000nm, then glass substrate is placed in water and carries out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit again the metallic film that second layer thickness is 100-500nm, can make the back reflector with periodic structure.
A kind of application of back reflector of described periodic structure, for making the back reflector of thin film solar cell, described thin film solar cell is that amorphous is silica-based, microcrystalline silicon, nano silicon-based thin film solar cell, tie laminated silicon-base film solar cell, CIGS solar cell or copper-zinc-tin-sulfur solar cell more.
Advantage of the present invention and good effect:
The present invention utilizes template action and magnetron sputtering or the evaporated metal film of polystyrene microsphere, has realized the preparation of the periodic structure back reflector of high scattering; The back electrode of this periodic structure is applied to thin film solar cell, the battery short circuit current density of the same terms prepared as back reflector by more traditional suede degree metal A g film has improved 9.4%, conversion efficiency has improved 18.4%, in the wave-length coverage that can utilize the 300-1500nm battery, has good scattering process.
The accompanying drawing explanation
The structural representation of the back reflector that Fig. 1 is this periodic structure.
Fig. 2 is the shape appearance figure of the back reflector of the standby Ag film that certain roughness is arranged of employing conventional sputter legal system.
Fig. 3 is for adopting the shape appearance figure of the back reflector that the PS bead is the periodic structure for preparing of template.
Fig. 4 is integrated reflection and the suede degree comparative result of the back reflector of the back reflector that adopts the PS bead to be the periodic structure for preparing of the template Ag film that certain roughness arranged standby with adopting the conventional sputter legal system.
Fig. 5 is applied to the external quantum efficiency comparative result of microcrystalline silicon solar cell for the back reflector of the back reflector that adopts the PS bead to be the periodic structure for preparing of the template Ag film that certain roughness is arranged standby with adopting the conventional sputter legal system.
Fig. 6 is applied to the battery efficiency comparative result of microcrystalline silicon solar cell for the back reflector of the back reflector that adopts the PS bead to be the periodic structure for preparing of the template Ag film that certain roughness is arranged standby with adopting the conventional sputter legal system.
Embodiment
embodiment 1:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Ag film of template action and the second layer Ag film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A g film, and wherein ground floor Ag film thickness is 600nm, and the thickness of second layer Ag film is 300nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 180nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 5 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 2 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 2 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 6 minutes, the size of corresponding ethene microballoon is 1.8 μ m;
4) adopt the method deposition ground floor thickness A g film of magnetron sputtering on the ethene microballoon after etching, the Ag metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Ag film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 28 min, the ground floor Ag film that to obtain thickness be 600 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Ag film, underlayer temperature is room temperature again, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 14 min, and the second layer Ag film that to obtain thickness be 300 nm, can make the back reflector with periodic structure.
Fig. 2 is the shape appearance figure of the back reflector of the standby Ag film that certain roughness is arranged of employing conventional sputter legal system.Fig. 3 is for adopting the shape appearance figure of the back reflector that the PS bead is the periodic structure for preparing of template.From shape appearance figure, relatively show: when adopting the back reflector of periodic structure of the present invention, can access larger matte roughness, and periodic structure clearly, r.m.s. roughness is 180nm, much larger than traditional 84 nm.
Fig. 4 is integrated reflection and the suede degree comparative result of the back reflector of the back reflector that adopts the PS bead to be the periodic structure for preparing of the template Ag film that certain roughness arranged standby with adopting the conventional sputter legal system.In figure, show: periodically the integrated reflection of back reflector and suede degree are far away higher than traditional metal backing reflecting electrode that certain roughness is arranged.
The back reflector of the periodic structure of preparation is applied to the microcrystalline silicon solar cell.
The back reflector that Fig. 5 is the present invention's Ag film that certain roughness is arranged of adopting back reflector that the PS bead is the periodic structure for preparing of template and traditional employing sputtering method to prepare is applied to the external quantum efficiency comparative result of microcrystalline silicon solar cell.In figure, show: the effect that the periodic structure back reflector has played sunken light to shortwave and the long wave of incident light simultaneously, make the microcrystalline silicon solar cell there is larger short-circuit current density, short-circuit current density has improved 9.4%.
The back reflector that Fig. 6 is the present invention's Ag film that certain roughness is arranged of adopting back reflector that the PS bead is the periodic structure for preparing of template and traditional employing sputtering method to prepare is applied to the battery efficiency comparative result of microcrystalline silicon solar cell.In figure, show: the periodic structure back reflector is applied to the microcrystalline silicon battery and can obtains higher battery efficiency, conversion efficiency has improved 18.4%.
embodiment 2:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Al film of template action and the second layer Ag film of a modification, substrate layer is hard substrates glass, wherein ground floor Al film thickness is 500nm, the thickness of second layer Ag film is 300nm, forms the back reflector of the periodic structure with wide spectral dispersion effect, and the back reflector r.m.s. roughness of periodic structure is 120nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 6 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 2 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 2 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 9 minutes, the size of corresponding ethene microballoon is 1.5 μ m;
4) adopt the method deposition ground floor thickness A l film of magnetron sputtering on the ethene microballoon after etching, the Al metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Al film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 23 min, the ground floor Al film that to obtain thickness be 500 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Ag film, the Ag metallic target that target is purity 99.999%, adopt the pure argon sputter again, and prepare fine and close Ag film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 14 min, and the second layer Ag film that to obtain thickness be 300 nm, can make the back reflector with periodic structure.
Adopt the technique effect of back reflector of periodic structure of the present invention and embodiment 1 roughly the same; The back reflector of periodic structure is applied to the technique effect of microcrystalline silicon solar cell and embodiment 1 roughly the same.
?
embodiment 3:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Ag film of template action and the second layer Ag film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A g film, and wherein ground floor Ag film thickness is 400nm, and the thickness of second layer Ag film is 300nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 85nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 5 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 2 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 2 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 6 minutes, the size of corresponding ethene microballoon is 1.8 μ m;
4) adopt the method deposition ground floor thickness A g film of magnetron sputtering on the ethene microballoon after etching, the Ag metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Ag film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 19 min, the ground floor Ag film that to obtain thickness be 400 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Ag film, underlayer temperature is room temperature again, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 14 min, and the second layer Ag film that to obtain thickness be 300nm, can make the back reflector with periodic structure.
Adopt the technique effect of back reflector of periodic structure of the present invention and embodiment 1 roughly the same; The back reflector of periodic structure is applied to the technique effect of microcrystalline silicon solar cell and embodiment 1 roughly the same.
?
embodiment 4:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Ag film of template action and the second layer Ag film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A g film, and wherein ground floor Ag film thickness is 500nm, and the thickness of second layer Ag film is 300nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 170nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 8 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 4 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 4 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 15 minutes, the size of corresponding ethene microballoon is 3.0 μ m;
4) adopt the method deposition ground floor thickness A g film of magnetron sputtering on the ethene microballoon after etching, the Ag metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Ag film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 23 min, the ground floor Ag film that to obtain thickness be 500 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Ag film, underlayer temperature is room temperature again, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 14 min, and the second layer Ag film that to obtain thickness be 300nm, can make the back reflector with periodic structure.
Adopt the technique effect of back reflector of periodic structure of the present invention and embodiment 1 roughly the same; The back reflector of periodic structure is applied to the technique effect of microcrystalline silicon solar cell and embodiment 1 roughly the same.
embodiment 5:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Mo metallic film of template action and the second layer Mo metallic film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal M o film, wherein ground floor Mo film thickness is 600nm, the thickness of second layer Mo film is 300nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 160nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 7 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 3 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 3 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 10 minutes, the size of corresponding ethene microballoon is 2.4 μ m;
4) adopt the method deposition ground floor thickness Mo film of magnetron sputtering on the ethene microballoon after etching, the Mo metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Mo film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 24 min, the ground floor Mo film that to obtain thickness be 600 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Mo film, underlayer temperature is room temperature again, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 15 min, and the second layer Mo film that to obtain thickness be 300nm, can make the back reflector with periodic structure.
Adopt the technique effect of back reflector of periodic structure of the present invention and embodiment 1 roughly the same; The back reflector of periodic structure is applied to the technique effect of microcrystalline silicon solar cell and embodiment 1 roughly the same.
?
embodiment 6:
A kind of back reflector of periodic structure, as shown in Figure 1, comprise substrate layer, form the ground floor Al film of template action and the second layer Al film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A l film, and wherein ground floor Al film thickness is 600nm, and the thickness of second layer Al film is 200nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 140nm.
A kind of preparation method of back reflector of described periodic structure, utilize water-bath method assembling polystyrene (PS) microballoon, uses O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 5 hours;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 3 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, form the polystyrene microsphere of the particle diameter 2 μ m of individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching (RIE), oxygen flow 10 Sccm, air pressure 11pa, radio-frequency power 150W, etch period is 12 minutes, the size of corresponding ethene microballoon is 2.2 μ m;
4) adopt the method deposition ground floor thickness A l film of magnetron sputtering on the ethene microballoon after etching, the Al metallic target that target is purity 99.999%, adopt the pure argon sputter, and prepare fine and close Al film: underlayer temperature is room temperature, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, sputtering pressure is 4mTorr, electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 28 min, the ground floor Al film that to obtain thickness be 600 nm, then be placed on glass substrate in water and carry out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit second layer Al film, underlayer temperature is room temperature again, and base vacuum is 5 * 10 -5pa, argon flow amount is 40 sccm, and sputtering pressure is 4mTorr, and electrode spacing is 110 mm, and sputtering power is 50 W, and sputtering time is 14 min, and the second layer Al film that to obtain thickness be 300nm, can make the back reflector with periodic structure.
Adopt the technique effect of back reflector of periodic structure of the present invention and embodiment 1 roughly the same; The back reflector of periodic structure is applied to the technique effect of microcrystalline silicon solar cell and embodiment 1 roughly the same.
?
To sum up, the invention provides a kind of effective ways that improve silicon-based thin film solar cell back reflector scattering properties, the method and traditional silicon-base thin-film battery back reflector preparation technology are fully compatible, and generally be applicable to that amorphous is silica-based, microcrystalline silicon, nano silicon-based film unijunction and many knot NIP solar cells.Because the back reflector of this preiodic type structure has increased the utilization to long wavelength and short-wavelength light simultaneously, thereby be conducive to improve the light absorption of battery, improve the battery short circuit electric current, and then improve the photoelectric conversion efficiency of solar cell.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, anyly is familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.

Claims (3)

1. the back reflector of a periodic structure, it is characterized in that: comprise substrate layer, form the first layer metal film of template action and the second layer metal film of a modification, substrate layer is hard substrates glass, the double layer of metal film is metal A g, Al or Mo film, wherein the ground floor film thickness is 300-1000nm, the thickness of second layer metal film is 100-500nm, form the back reflector of the periodic structure with wide spectral dispersion effect, the back reflector r.m.s. roughness of periodic structure is 50-200 nm.
2. the preparation method of the back reflector of periodic structure as claimed in claim 1, is characterized in that: utilize water-bath method assembling polystyrene microsphere, use O 2plasma etching PS microballoon, utilize the template action of the polystyrene microsphere after etching, obtains having the back reflector of the periodic structure of wide spectral dispersion effect, and step is as follows:
1) glass substrate is immersed in to H 2sO 4with H 2o 2the volume ratio mixed solution that is 2:1 in carry out hydrophilic treated, the processing time is 2-10 hour;
2) above-mentioned glass substrate is placed on horizontal stand, by particle diameter, be that the polystyrene microsphere latex solution that 1-5 μ m, concentration are 5wt% vertically drops on glass substrate, solution slowly spreads apart and makes that the ethene microballoon is inhomogeneous to be interspersed among on glass substrate, then glass substrate is placed on steam and carries out self assembly, through the water-bath of 30min, the polystyrene microsphere of the formation individual layer six side's solid matters on glass substrate;
3) by the polystyrene microsphere of above-mentioned individual layer six side's solid matters, carry out O 2plasma etching, after etching, the size of polystyrene microsphere is 0.5-4 μ m;
4) on the ethene microballoon after etching, adopt the method for magnetron sputtering or evaporation to deposit the metallic film that ground floor thickness is 300-1000nm, then glass substrate is placed in water and carries out ultrasonic processing until the ethene bead is processed totally fully;
5) adopt the method for magnetron sputtering or evaporation to deposit again the metallic film that second layer thickness is 100-500nm, can make the back reflector with periodic structure.
3. the application of the back reflector of periodic structure as claimed in claim 1, it is characterized in that: for making the back reflector of thin film solar cell, described thin film solar cell is that amorphous is silica-based, microcrystalline silicon, nano silicon-based thin film solar cell, tie laminated silicon-base film solar cell, CIGS solar cell or copper-zinc-tin-sulfur solar cell more.
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CN107112378A (en) * 2015-01-07 2017-08-29 株式会社钟化 Solar cell and its manufacture method and solar module
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CN106159040B (en) * 2016-08-24 2018-05-08 华南师范大学 A kind of method that Whote-wet method prepares flexible metal network transparency electrode
CN106653914A (en) * 2016-12-22 2017-05-10 浙江大学 Ultra-thin sunlight heater and preparation method therefor
CN109504994A (en) * 2018-12-13 2019-03-22 上海科技大学 A kind of preparation method of Novel anode alumina formwork and nano-array
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