CN103454798A - 阵列基板及其制作方法、显示装置 - Google Patents
阵列基板及其制作方法、显示装置 Download PDFInfo
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
本发明实施例公开了一种阵列基板及其制作方法、显示装置,涉及显示技术领域,能够改善ADS TFT-LCD的显示面板的画面泛绿现象,且易于实现。所述阵列基板,包括衬底基板、位于所述衬底基板上的纵横交错的栅线、数据线和公共电极,所述公共电极包括透明导电层和位于所述透明导电层之下的第一辅助导电层,所述公共电极的第一辅助导电层与所述栅线或所述数据线重叠。本发明应用于液晶显示器。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
高级超维场转换技术型薄膜晶体管液晶显示器(Advanced Super DimensionSwitch Thin Film Transistor Liquid Crystal Display,简称ADS TFT-LCD)通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极与板状电极间产生的电场形成多维电场,使显示面板内的狭缝电极间和狭缝电极正上方的液晶分子都能够产生偏转,从而提高液晶分子工作效率并增大了透光效率。其显示效果主要由显示面板决定。显示面板包括阵列基板、彩膜基板和位于两块基板之间的液晶分子层。
ADS TFT-LCD的显示面板常出现画面泛绿等不良现象。画面泛绿产生的主要原因在于阵列基板上设置的公共电极的电压发生畸变,即公共电极的电压的波形发生偏离,或者公共电极的电压发生衰减,即电压的数值随着传输距离的增加而减小,因此可以通过防止公共电极的电压发生畸变衰减来防止画面泛绿等不良现象的出现。
发明内容
本发明所要解决的技术问题在于提供一种阵列基板及其制作方法、显示装置,能够改善ADS TFT-LCD的显示面板的画面泛绿现象,实现较为简单。
为解决上述技术问题,本发明的第一方面提供了一种阵列基板,采用如下技术方案:
一种阵列基板,包括衬底基板、位于所述衬底基板上的纵横交错的栅线、数据线和公共电极,所述公共电极包括透明导电层和位于所述透明导电层之下的第一辅助导电层,所述公共电极的第一辅助导电层与所述栅线或所述数据线重叠。
所述的阵列基板,还包括薄膜晶体管和像素电极,所述公共电极还包括位于所述薄膜晶体管的***和所述像素电极的***之间的第二辅助导电层,所述第二辅助导电层与所述第一辅助导电层一体成型,所述透明导电层位于所述第二辅助导电层之上。
所述第一辅助导电层和所述第二辅助导电层的材质为金属。
所述第一辅助导电层覆盖所述栅线或所述数据线。
所述第一辅助导电层位于所述栅线或所述数据线的正上方,且所述第一辅助导电层在所述衬底基板上的正投影小于所述栅线或所述数据线在所述衬底基板上的正投影。
所述第一辅助导电层覆盖所述栅线或所述数据线的部分。
以上所述的阵列基板包括衬底基板、位于衬底基板上的纵横交错的栅线、数据线和公共电极,公共电极包括透明导电层和位于透明导电层之下的第一辅助导电层,公共电极的第一辅助导电层与栅线或数据线重叠。具有如上所述结构的阵列基板上设置的公共电极包括第一辅助导电层和透明导电层,其中第一辅助导电层和透明导电层并联,共同构成公共电极,因此公共电极的电阻较小,降低了公共电极电压的畸变衰减,使得公共电极的电压的波形不易发生偏离,且公共电极的电压的数值随着传输距离的增加而无明显减小,改善了画面泛绿现象,提高了ADS TFT-LCD的显示效果。
本发明的第二方面提供了一种显示装置,包括如上所述的阵列基板。
为了进一步解决上述问题,本发明的第三方面还提供了一种阵列基板的制作方法,包括:
在所述衬底基板上依次形成包括栅线的图形、包括数据线的图形,所述栅线和所述数据线纵横交错;
在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠;
在所形成的所述第一辅助导电层的图形之上,形成包括所述透明导电层的图形。
在所形成的数据线的图形上形成包括第一辅助导电层的同时形成第二辅助导电层,所述第二辅助导电层与所述第一辅助导电层一体成型,所述第二辅助导电层位于所述阵列基板的薄膜晶体管的***和像素电极的***之间;
所述在所形成的所述第一辅助导电层的图形上,形成包括所述透明导电层的图形包括:
在所形成的第一辅助导电层和第二辅助导电层的图形之上,形成包括透明导电层的图形。
所述第一辅助导电层和所述第二辅助导电层的材质为金属。
在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠包括:
所述第一辅助导电层覆盖所述栅线或所述数据线;或,
所述第一辅助导电层位于所述栅线或所述数据线的正上方,且所述第一辅助导电层在所述衬底基板上的正投影小于所述栅线或所述数据线在所述衬底基板上的正投影;或,
所述第一辅助导电层覆盖所述栅线或所述数据线的部分。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的第一种阵列基板的平面示意图;
图2为本发明实施例提供的图1所示的阵列基板的A-A’截面示意图;
图3为本发明实施例提供的图1所示的阵列基板的B-B’截面示意图;
图4为本发明实施例提供的第二种阵列基板的数据线截面示意图;
图5为本发明实施例提供的第二种阵列基板的薄膜晶体管截面示意图;
图6为本发明实施例提供的第三种阵列基板的数据线横截面示意图;
图7为本发明实施例提供的第三种阵列基板的薄膜晶体管截面示意图;
图8为本发明实施例提供的一种阵列基板的制作方法的流程图;
图9a-图9d为本发明实施例提供的一种阵列基板的制作过程示意图。
附图标记说明:
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一
本发明实施例提供了一种阵列基板,如图1-图3所示,该阵列基板包括衬底基板1、位于衬底基板1上的纵横交错的栅线2、数据线5和公共电极8,公共电极8包括透明导电层82和位于透明导电层82之下的第一辅助导电层81,公共电极的第一辅助导电层81与栅线2或数据线5重叠。
具有如上所述结构的阵列基板上设置的公共电极包括第一辅助导电层和透明导电层,其中第一辅助导电层和透明导电层并联,共同构成公共电极,因此公共电极的电阻较小,降低了公共电极电压的畸变衰减,使得公共电极的电压的波形不易发生偏离,且公共电极的电压的数值随着传输距离的增加而无明显减小,改善了画面泛绿现象,提高了ADS TFT-LCD的显示效果。
进一步地,为了更好的降低公共电极8的电阻,公共电极8还可以包括位于薄膜晶体管的***和像素电极6的***之间的第二辅助导电层83,第二辅助导电层83与第一辅助导电层81一体成型,透明导电层82位于第二辅助导电层83之上。
具体地,第一辅助导电层81优选为导电性良好的金属材料,如铜、铝、银、钼、铬等;透明导电层82优选为氧化铟锡、氧化铟锌等透明导电物;第二辅助导电层83与第一辅助导电层81一体成型,也优选为如铜、铝、银、钼、铬等导电性良好的金属材料。
目前,公共电极8一般采用的是氧化铟锡、氧化铟锌等透明导电物,具有良好的透光性。在本发明实施例中公共电极8包括第一辅助导电层81、透明导电层82或第二辅助导电层83,而第一辅助导电层81和第二辅助导电层83选用的是不透光的金属材料。因此,为了保证阵列基板上不透明的第二辅助导电层83的设置不对ADS TFT-LCD显示面板的透过率产生影响,第二辅助导电层83在阵列基板上的正投影的宽度及位置应满足阵列基板与彩膜基板对盒时,彩膜基板上的黑矩阵可以将第二辅助导电层83遮盖。类似地,为了保证阵列基板上不透明的第一辅助导电层81的设置不对ADS TFT-LCD显示面板的透过率产生影响,第一辅助导电层81在阵列基板上的正投影的宽度及位置也需要进行合理设置,示例性地可以采用如下几种方案进行设置:
方案一,第一辅助导电层81覆盖数据线5,如图1-图3所示,第一辅助导电层81位于数据线5上方,第一辅助导电层81的宽度大于数据线5的宽度,因此可以在最大程度上降低公共电极8的电阻,但第一辅助导电层81的宽度需要小于彩膜基板上相应位置的黑矩阵的宽度,才可以不对ADS TFT-LCD的显示面板的透过率造成影响。第一辅助导电层81覆盖数据线5时,还可以有效降低数据线5与像素电极6之间的段差,使阵列基板表面平滑,取向膜易于涂覆,而且不易形成摩擦不充分区域,使液晶分子具有较好的取向,在一定程度上还可以改善漏光现象。
方案二,第一辅助导电层81位于数据线5的正上方,如图4和图5所示,第一辅助导电层81在衬底基板1上的正投影小于数据线5在衬底基板1上的正投影。第一辅助导电层81的设置可以微弱降低公共电极8的电阻,无法降低数据线5与像素电极6之间的段差,但不会对ADS TFT-LCD的显示面板的透过率产生影响。
方案三,第一辅助导电层81覆盖数据线5的部分,如图6和图7所示,这种设计可以在一定程度上降低公共电极8的电阻,也可以有效降低数据线5上第一辅助导电层8覆盖一侧的段差,在一定程度上起到防止漏光的作用。
类似地,第一辅助导电层81也可以覆盖栅线2;或者第一辅助导电层81位于栅线2的正上方,且第一辅助导电层81在衬底基板1上的正投影小于栅线2在衬底基板1上的正投影;或者第一辅助导电层81覆盖栅线2的部分。
需要说明的是,第一辅助导电层81和第二辅助导电层83与栅线2或者数据线5的相对位置不局限于以上所述几种,只要第一辅助导电层81和第二辅助导电层83的设置既可以降低公共电极8的电阻,又不影响ADS TFT-LCD的显示面板的透过率即可,本发明实施例对此不进行限制。
具体地,阵列基板的结构包括衬底基板1,衬底基板1优选为透光性好的玻璃基板、石英基板、塑料基板等。
如图1、图2和图3所示,位于衬底基板1上的是栅线2,栅线2可以为单层结构也可以为多层结构。栅线2为单层结构时,可以为铜、铝、银、钼、铬、钕、镍、锰、钛、钽、钨等材料或以上各种元素组成的合金;栅线2为多层结构时,可以为铜\钛、铜\钼、钼\铝\钼等。栅线2可以直接位于衬底基板1上,也可以在栅线2与衬底基板1之间设置缓冲层,缓冲层可以为氮化硅或者氧化硅。栅线2的厚度优选为3500~4400
位于栅线2上的是栅极绝缘层3,如图1、图2和图3所示。栅极绝缘层3可以为氮化硅、氧化硅或氮氧化硅等材料,其可以为单层结构,也可以为由氮化硅或氧化硅构成的双层结构。栅极绝缘层3的厚度优选为3550~4450
位于有源层4上的是数据线5、源极51和漏极52,如图1、图2和图3所示。数据线5、源极51和漏极52可以为单层结构也可以为多层结构。数据线5、源极51和漏极52为单层结构时,可以为铜、铝、银、钼、铬、钕、镍、锰、钛、钽、钨等材料或以上各种元素组成的合金;数据线5、源极51和漏极52为多层结构时,可以为铜\钛、铜\钼、钼\铝\钼等。
如图1、图2和图3所示,位于数据线5、源极51、漏极52和像素电极6上的是钝化层7,钝化层7可以为氮化硅、氧化硅或者氮氧化硅的单层结构,也可以为氮化硅或氧化硅构成的双层结构。此外,还可以选用有机树脂作为钝化层7所用的材料,例如丙烯酸类树脂、聚酰亚胺和聚酰胺等。钝化层7的厚度优选为200~5000
位于钝化层7上的是公共电极8,如图1、图2和图3所示。公共电极8包括第一辅助导电层81、透明导电层82和第二辅助导电层83。第一辅助导电层81和第二辅助导电层83优选为导电性良好的金属材料,如铜、铝、银、钼、铬等;透明导电层82优选为氧化铟锡、氧化铟锌等透明导电物。第一辅助导电层81和第二辅助导电层83的厚度优选为900~1500透明导电层82的厚度优选为400~700
此外,本发明实施例还提供了一种显示装置,该显示装置包括如上所述的阵列基板。该显示装置可以为:液晶面板、电子纸、有机发光二极管面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
实施例二
本发明实施例提供了一种阵列基板的制作方法,如图8所示,该阵列基板的制作方法包括:
步骤S801、在衬底基板上依次形成包括栅线的图形、包括数据线的图形,栅线和数据线纵横交错。
经过上述步骤之后的阵列基板如图9a和图9b所示。其具体实施过程可以如下所述:
首先,可以通过溅射、热蒸发等方法在衬底基板1上形成一层栅金属膜。在形成栅金属膜之前,还可以在衬底基板1上先形成一层缓冲层。在栅金属膜上涂覆一层光刻胶,使用具有包括栅线2和栅极21图形的掩膜板进行遮盖,然后曝光、显影、刻蚀,最后剥离光刻胶,形成包括栅线2和栅极21的图案。
其次,可以通过等离子体增强化学气相沉积等方法在栅线2和栅极21的图案上形成栅极绝缘层3。
再次,可以通过溅射等方法在栅极绝缘层3上形成半导体薄膜,使用具有包括有源层4的图形的掩膜板进行遮盖,进行曝光、显影和刻蚀,最后剥离光刻胶,形成包括有源层4的图案。
接着,可以通过溅射或者热蒸发等方法,在有源层4上形成一层数据线金属膜。在数据线金属膜上涂覆一层光刻胶,然后使用具有包括数据线5、源极51和漏极52的图形的掩膜板进行遮盖,进行曝光、显影和刻蚀,最后剥离光刻胶,形成包括数据线5、源极51和漏极52的图案。
然后,可以通过溅射等方法在包括数据线5、源极51和漏极52的图案上形成一层透明导电薄膜,然后使用具有包括像素电极6的图形的掩膜板进行遮盖,然后经过曝光、显影、刻蚀等步骤,最后剥离光刻胶,形成包括像素电极6的图案。其中像素电极6与漏极52电连接。
最后,可以通过等离子体化学气相沉积等方法在形成了包括像素电极6的图案的衬底基板1上形成一层钝化层7。
如图8所示,该阵列基板的制作方法还包括:
步骤S802、在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,第一辅助导电层与栅线或数据线重叠。
经过上述步骤之后的阵列基板如图9c和图9d所示。其具体实施过程可以如下所述:
可以使用溅射或者热蒸发等方法在形成的包括数据线5的图案上形成一层第一导电薄膜,使用具有包括第一辅助导电层81图形的掩膜板进行遮盖,经过曝光、显影、刻蚀等步骤后,剥离光刻胶,形成包括第一辅助导电层81的图案。第一辅助导电层81优选为导电性良好的金属材料,如铜、铝、银、钼、铬等。第一辅助导电层81的厚度优选为900~1500
进一步地,可以通过对掩膜板上第一辅助导电层81图形的不同设计来实现第一辅助导电层81与栅线或者数据线相对位置的不同,例如第一辅助导电层81覆盖栅线2或数据线5;第一辅助导电层81位于栅线2或数据线5的正上方,且第一辅助导电层81在衬底基板1上的正投影小于栅线2或数据线5在衬底基板1上的正投影;第一辅助导电层81覆盖栅线2或数据线5的部分。
此外,为了进一步降低公共电极8的电阻,还可以在所形成的数据线5的图形上形成包括公共电极8的第一辅助导电层81的同时形成第二辅助导电层83,第二辅助导电层83与第一辅助导电层81一体成型,第二辅助导电层83位于阵列基板上薄膜晶体管的***和像素电极6的***之间。由于第二辅助导电层83和第一辅助导电层81一体成型,因此第二辅助导电层83也选用铜、铝、银、钼、铬等导电性良好的金属材料,第二辅助导电层83的厚度优选为900~1500
步骤S803、在所形成的第一辅助导电层的图形之上,形成包括透明导电层的图形。
可以通过溅射等方法,在所形成的第一辅助导电层81的图形上,形成一层第二导电薄膜。使用具有包括透明导电层82图形的掩膜板遮盖,进行曝光、显影、刻蚀等步骤,然后剥离光刻胶,形成包括透明导电层82的图案,最后形成如图1、图2和图3所示的阵列基板的结构。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (15)
1.一种阵列基板,包括衬底基板、位于所述衬底基板上的纵横交错的栅线、数据线和公共电极,其特征在于,
所述公共电极包括透明导电层和位于所述透明导电层之下的第一辅助导电层,所述公共电极的第一辅助导电层与所述栅线或所述数据线重叠。
2.根据权利要求1所述的阵列基板,还包括薄膜晶体管和像素电极,其特征在于,
所述公共电极还包括位于所述薄膜晶体管的***和所述像素电极的***之间的第二辅助导电层,所述第二辅助导电层与所述第一辅助导电层一体成型,所述透明导电层位于所述第二辅助导电层之上。
3.根据权利要求2所述的阵列基板,其特征在于,
所述第一辅助导电层和所述第二辅助导电层的材质为金属。
4.根据权利要求1所述的阵列基板,其特征在于,
所述第一辅助导电层覆盖所述栅线或所述数据线。
5.根据权利要求1所述的阵列基板,其特征在于,
所述第一辅助导电层位于所述栅线或所述数据线的正上方,且所述第一辅助导电层在所述衬底基板上的正投影小于所述栅线或所述数据线在所述衬底基板上的正投影。
6.根据权利要求1所述的阵列基板,其特征在于,
所述第一辅助导电层覆盖所述栅线或所述数据线的部分。
8.一种显示装置,其特征在于,包括权利要求1-7任一项所述的阵列基板。
9.一种阵列基板的制作方法,其特征在于,包括:
在所述衬底基板上依次形成包括栅线的图形、包括数据线的图形,所述栅线和所述数据线纵横交错;
在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠;
在所形成的所述第一辅助导电层的图形之上,形成包括所述透明导电层的图形。
10.根据权利要求9所述的阵列基板的制作方法,其特征在于,在所形成的数据线的图形上形成包括第一辅助导电层的同时形成第二辅助导电层,所述第二辅助导电层与所述第一辅助导电层一体成型,所述第二辅助导电层位于所述阵列基板的薄膜晶体管的***和像素电极的***之间;
所述在所形成的所述第一辅助导电层的图形上,形成包括所述透明导电层的图形包括:
在所形成的第一辅助导电层和第二辅助导电层的图形之上,形成包括透明导电层的图形。
11.根据权利要求10所述的阵列基板的制作方法,其特征在于,
所述第一辅助导电层和所述第二辅助导电层的材质为金属。
13.根据权利要求9所述的阵列基板的制作方法,其特征在于,在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠包括:
所述第一辅助导电层覆盖所述栅线或所述数据线。
14.根据权利要求9所述的阵列基板的制作方法,其特征在于,在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠包括:
所述第一辅助导电层位于所述栅线或所述数据线的正上方,且所述第一辅助导电层在所述衬底基板上的正投影小于所述栅线或所述数据线在所述衬底基板上的正投影。
15.根据权利要求9所述的阵列基板的制作方法,其特征在于,在所形成的数据线的图形上形成包括公共电极的第一辅助导电层,所述第一辅助导电层与所述栅线或所述数据线重叠包括:
所述第一辅助导电层覆盖所述栅线或所述数据线的部分。
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CN107885402A (zh) * | 2017-12-15 | 2018-04-06 | 合肥京东方光电科技有限公司 | 一种自容式触控面板及显示装置 |
CN109273516A (zh) * | 2013-12-31 | 2019-01-25 | 京东方科技集团股份有限公司 | Amoled阵列基板及显示装置 |
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WO2023097498A1 (zh) * | 2021-11-30 | 2023-06-08 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
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