CN103436862B - MOCVD reactor and support shaft for MOCVD reactor - Google Patents
MOCVD reactor and support shaft for MOCVD reactor Download PDFInfo
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- CN103436862B CN103436862B CN201310338182.9A CN201310338182A CN103436862B CN 103436862 B CN103436862 B CN 103436862B CN 201310338182 A CN201310338182 A CN 201310338182A CN 103436862 B CN103436862 B CN 103436862B
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- back shaft
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an MOCVD (metal organic chemical vapor deposition) reactor and a support shaft for the MOCVD reactor. The problems that an inner ring heater is low in power utilization ratio, a load of the surface of the inner ring heater is high, and a cooling requirement below the support shaft is high due to the fact that the available support shaft is large in heat conductivity coefficient, and the heat transmission capacity of a slide glass disk to the support shaft is great are solved. The support shaft for the MOCVD reactor comprises a support shaft bottom, a support shaft middle and a support shaft top, wherein the support shaft top, the support shaft middle and the support shaft bottom are fixedly connected; gas channels are communicated among the support shaft bottom, the support shaft middle and the support shaft top; the support shaft top is frustum-shaped, and is provided with a connecting ring; a fixed cover plate is mounted at the top of the connecting ring; and a heat insulation cover plate is mounted at the top of the fixed cover plate. According to the MOCVD reactor and the support shaft, the service life of the inner ring heater is prolonged; the normal working time of equipment is prolonged; the complete power is reduced; and an energy-saving effect is improved.
Description
Technical field
The present invention relates to a kind of back shaft for MOCVD reactor and MOCVD reactor, particularly a kind of rotating support shaft for metal organic chemical vapor deposition reactor and chip carrying disk.
Background technology
MOCVD(Metal Organic Chemical Vapor Deposition) equipment, i.e. metal-organic chemical vapor deposition equipment, it makes the metallorganics source (MO source) containing II race or III race's element react on wafer under the condition strictly controlled with the gas source containing VI race or group Ⅴ element, and growth obtains required thin-film material.
Temperature field is one of key parameter needing in MOCVD to control, because the lysis efficiency participating in each material reacted at different temperatures is different, because the speed of MOCVD film formation reaction is under the high temperature conditions very fast, therefore on slide glass dish, the lysis efficiency of wafer reaction material is everywhere different will cause wafer on slide glass dish the thickness of film forming, the component of film will occur different, thus make the Quality Down of deposit film everywhere.
In order to make wafer temperature everywhere on slide glass dish consistent, as shown in Figure 1, reactant gases accesses spray header 1 from gas interface 12 a kind of design generally adopted at present, and reactant gases enters in reaction chamber 11 after the distribution of spray header.Wafer 10 is placed on chip carrying disk 9, is the heating unit 2,3,4 of segmentation, in order to also be distributed with thermoscreen 8 below conserve energy heating unit immediately below chip carrying disk.In order to make slide glass panel surface homogeneous temperature, the axle 6 placing slide glass dish also can drive slide glass disc spins, to make the further thermally equivalent of slide glass dish.Heating unit schematic diagram as shown in Figure 2, wherein centre circle well heater plays main heat effect, wafer is generally placed on this region, and inner ring mainly plays compensate for wafer load plate back shaft conduction institute dispersed heat, and compensate for wafer load plate edge is mainly played due to extra heat radiation and convection current dispersed heat in outer ring.
Mainly there is following defect in the chip carrying disk of current use and back shaft: 1. back shaft heat conduction is fast, therefore its heat dissipation capacity is large, the dispersed heat in order to compensate, the heating power of inner ring well heater is very large, the surface load of well heater is large, cause inner ring well heater easily to damage, be unfavorable for the long-term stable operation of equipment.2. because back shaft temperature is higher, and the tightness system below axle can not be subject to high temperature, therefore, requires high to cooling.3. inner ring heater power is large, and the power that the cooling of below needs is also comparatively large, large to energy consumption, not energy-conservation.
Summary of the invention
Large in order to overcome existing back shaft thermal conductivity, slide glass dish is large toward back shaft heat transfer capacity, cause the power utilization of inner ring well heater low, the deficiency that cooling requirement below high, the back shaft of surface load of inner ring heating is high, the present invention aims to provide a kind of back shaft for MOCVD reactor and MOCVD reactor, and this back shaft and MOCVD reactor improve the work-ing life of inner ring well heater, the normal operating time of the equipment that extends, and decrease complete machine power, improve energy-saving effect.
To achieve these goals, the technical solution adopted in the present invention is:
For a back shaft for MOCVD reactor, its constructional feature is, comprises bottom the back shaft for being connected with rotary drive mechanism, in the middle part of the back shaft be made up of at least one collet, and the back shaft top for being coupled with chip carrying disk; Be fixedly linked between in the middle part of described back shaft top, back shaft and bottom back shaft, and bottom back shaft, in the middle part of back shaft and bottom back shaft between be communicated with gas passage; Described back shaft top is taper type, and shack is equipped with at this back shaft top, and securing cover plate is equipped with at shack top, and heat insulation cover plate is equipped with at described securing cover plate top.
The connection portion of each parts is all designed to the conical surface with self-centering ability, ensure that the concentricity with conical top bottom the rear rotating support shaft of assembling.
Be below the technical scheme of further improvement of the present invention:
Further, the quantity of described collet is 1 ~ 20; When collet is multiple, be provided with reinforcing sleeve between adjacent two collets, this reinforcing sleeve is provided with centre hole.
Be provided with counterbore in described back shaft top, in the middle part of described back shaft, have hole, bottom described back shaft, all have tapped bind hole; Be fixedly linked by trip bolt or bolt between in the middle part of described back shaft top, back shaft and bottom back shaft, wherein the screw head of trip bolt or bolt or bolt head are positioned at the counterbore at back shaft top, are positioned at described tapped bind hole through the trip bolt in the hole in the middle part of back shaft or the screw rod of bolt; Described trip bolt or bolt have the ventilating pit of through trip bolt or bolt upper and lower surface along its axis; The bottom of described trip bolt or bolt is communicated with back shaft bottom outer surface by a breeder tube.Screw is adopted to carry out after the superposition of rotating support shaft each several part is assembled together fastening, to ensure the reliability selecting dress back shaft.
Between the bottom face of the counterbore at described back shaft top and described screw head or bolt head, heat insulating mattress and heating cushion are housed.
Described reinforcement pad conically, fit, conical surface small end and screw head or bolt head are fitted by the large end of its conical surface and heat insulating mattress.
Described shack and securing cover plate are for being threaded.
Described trip bolt or bolt top are provided with the insulation plate of the counterbore being positioned at described back shaft top, this insulation plate have the ventilating pit running through insulation plate upper and lower surface; The ventilating pit of described trip bolt or bolt is communicated with the ventilating pit of insulation plate.
Between described securing cover plate and heat insulation cover plate, there is gap.
Described securing cover plate end face has at least three projections, and described heat insulation cover plate is placed at least three projections.
Described reinforcing sleeve is made up of refractory metal or pottery; Described refractory metal is preferably tungsten, molybdenum; Described pottery is preferably alumina-ceramic.
Described trip bolt or bolt are made up of refractory metal.
Described shack comprises inner ring and outer shroud, and is arranged on the web member between inner ring and outer shroud.
Described web member is the disc or spoke that have stupalith to make.
A kind of MOCVD reactor, comprises rotating support shaft and the chip carrying disk being contained in rotating support shaft top, is positioned at the spray header above chip carrying disk; Its constructional feature is, described chip carrying disk comprises chip carrying disk disk body, is arranged on the through hole of chip carrying disk disk body shaft core position, and the top of this through hole is the counterbore being arranged on chip carrying disk disk body upper surface shaft core position, and the bottom of this through hole is tapered hole; Described rotating support shaft is above-mentioned back shaft, and described heat insulation cover plate and securing cover plate are positioned at the counterbore of this chip carrying disk disk body, and the outside surface of described shack is positioned at the tapered hole of described through hole; For being threaded between described securing cover plate and shack.
Thus, in order to strengthen effect of heat insulation, have also been devised and the chip carrying disk of back shaft coupling unit with Design on thermal insulation, reducing chip carrying disk further from dispersed heat rotating support shaft.
Below further detailed description is done to the present invention.
Rotating support shaft of the present invention adopts sectional design, and bottom back shaft, 601 are connected with rotary drive mechanism, and back shaft middle portion is ceramic insulation cover 606, and top is the top 605 be coupled with chip carrying disk 9.Screw 602 is adopted to carry out after the superposition of rotating support shaft each several part is assembled together fastening, to ensure the reliability of rotating support shaft.In order to strengthen effect of heat insulation, have also been devised the chip carrying disk 9 that middle portion adopts Design on thermal insulation, this chip carrying disk disk body part 904, for be made up of graphite or refractory metal, is distributed with a location tapered hole 905 in the middle of disk body in the plane of back shaft.In the tapered hole 905 of location, be provided with the shack 901 be connected with rotating support shaft, this shack 901 links together with the mode be threaded and chip carrying disk disk body 904 with securing cover plate 902, is also coated with a heat insulation cover plate 903 above securing cover plate 902.
The face that is of coupled connections of described each parts adopts the circular conical surface with self-centering ability, to ensure the concentricity of each several part.
The quantity of described collet 606 can be selected according to the needs of effect of heat insulation, and its quantitative range is 1 ~ 20.Be provided with reinforcing sleeve 603 between described collet 606, the material making reinforcing sleeve 603 is the pottery that refractory metal or intensity are higher, as tungsten, molybdenum, aluminum oxide etc.
Described trip bolt or bolt 602 are distributed with the ventilating pit 611 running through its upper and lower surface, and this trip bolt or bolt 602 are made up of refractory metal, as tungsten, molybdenum.
Described screw head or be distributed with heat insulating mattress 610 between bolt head 613 and rotating support shaft top 605 and strengthen pad 609.The profile of described reinforcement pad 609 is conical, and the large end of its conical surface combines with heat insulating mattress 610, the little conical surface combines with screw head or bolt head 613.
The top of described rotating support shaft base section 601 is distributed with a tapered blind hole, is furnished with a tapped bind hole 615 in the bottom part of blind hole, is also distributed with a breeder tube 607 and connects with the outside surface bottom turning axle bottom tapped bind hole 615.
Also be distributed with insulation plate 604 above described screw head or bolt head, this insulation plate 604 be distributed with the ventilating pit 608 running through its upper and lower surface.Described insulation plate 604, collet 606, heat insulating mattress 610 adopt has the pottery of effect of heat insulation or other lagging materials are made, if porosity is the aluminum oxide of 50%.
Describedly on the upper surface of securing cover plate 902, be distributed with some circular pimples 910, the quantity of projection 910 is more than or equal to 3, and some pimples 910 are uniformly distributed around securing cover plate 902 axle center on securing cover plate 902 upper surface.
Described heat insulation cover plate 903 is placed in the pimple 910 of securing cover plate 902 upper surface, has small heat insulation gap 911 between described securing cover plate 902 and heat insulation cover plate 903.
The upper surface of described heat insulation cover plate 903 is concordant with the upper surface of chip carrying disk 904.
Described shack 901 to be two-layerly made up of inside and outside, be coupled with top 605 and chip carrying disk disk body 904 respectively, the inside and outside two-layer of described shack 901 can connect into as a whole by disc or spoke, also can be connected into as a whole by lagging material, this lagging material can be one or more, distributes with alternate form.
The top of described shack 901 is also divided a flat of thread 908, corresponding, and the bottom of described securing cover plate 902 is one columnar structured, and columnar structured internal surface 909 is distributed with screw thread,
The shaft core position of described chip carrying disk disk body 904 is distributed with a through hole 906, and through hole is distributed with a counterbore 907 near the one side of placing wafer, and through hole is being distributed with a circular taper hole 905 on the surface relative with placing wafer surface.
Adopt refractory metal or the higher pottery of intensity bottom rotating support shaft of the present invention or be made up of pottery and metal mixed with the form of inlaying.Below bottom rotating support shaft is also designed with cooling structure to guarantee that the sealing position of rotating support shaft is in lower temperature.The top of rotating support shaft base section is also distributed with a tapered blind hole, is furnished with a tapped bind hole in the bottom part of blind hole, has a breeder tube to connect with the outside surface bottom turning axle bottom tapped bind hole.
Rotating support shaft collet of the present invention is be made up of the pottery with effect of heat insulation, if porosity is the aluminum oxide of 50%.Rotating support shaft collet intermediate distribution has manhole, preferably, and manhole diameter 0.5 ~ 2mm larger than the diameter of fastening screw used.Polylith ceramic insulation body can be adopted as required to strengthen effect of heat insulation, for can the higher strengthening ring of the intensity made of refractory metal or pottery between each ceramic insulation body, in order to avoid pottery occurs crack due to stress.
As a kind of preferred version, the joint face of described rotating support shaft collet and other parts is the circular conical surface.
As a kind of preferred version, the joint face of described strengthening ring and other parts is the circular conical surface.
As a kind of preferred version, the circular conical surface of above-mentioned each part fits tightly.
Rotating support shaft top of the present invention is be made up of refractory metal or the larger stupalith of intensity, and its lower surface is coupled with heat insulation, and the support ring of upper surface and chip carrying disk is coupled.Shaft core position on rotating support shaft top is also distributed with the through hole of band counterbore.
As a kind of preferred version, described through hole and counterbore are all circular.
The fastening screw used of rotating support shaft of the present invention is made up of refractory metal, screw is also distributed with the small through hole that runs through its bottom surface and end face.Between screw and rotating support shaft top, the heat insulation collar and pad are installed.The described heat insulation collar is made up of lagging material, and pad is made up of refractory metal or the higher pottery of intensity.Above described screw head or bolt head, be also provided with a heat insulation stopper, described heat insulation stopper one end is distributed with a blind round hole, and have blind hole one end relative with screw head or bolt head during installation, plane is relative with chip carrying disk.
As a kind of preferred version, the described heat insulation collar is round shape, and pad profile is conical round table shape, and one end that pad is larger connects with the heat insulation collar, and less one end connects with screw head or bolt head.
As a kind of preferred version, described insulating sleeve and heat insulation stopper cylindrical outer surface are distributed with pimple.
The chip carrying disk of employing Design on thermal insulation of the present invention can be divided into two portions, and a part is the disk body part of placing wafer, and another part is the connection portion be coupled with rotating support shaft, and these two portions are coupled by taper hole.The disk body part of described placement wafer is made up of high temperature material, as graphite, SiC, tungsten, molybdenum etc.The connection portion of described chip carrying disk is made up of the pottery that refractory metal, metal mixture or intensity are higher.
As a kind of preferred version, the connection portion of chip carrying disk disk body and chip carrying disk is coupled by the circular conical surface.
According to embodiments of the invention, connection portion of the present invention is made up of three parts, is respectively: shack, securing cover plate, heat insulation cover plate.
According to embodiments of the invention, shack adopts the structure of inside and outside two annular, and this inside and outside two annulus connects into as a whole by spoke sheet or little axle.Securing cover plate is threaded connection and is fixed on shack by the disk body of chip carrying disk.
According to embodiments of the invention, heat insulation cover plate is positioned on securing cover plate, and the material of heat insulation cover plate is the refractory material such as sapphire, SiC.
As a kind of preferred version, heat insulation cover plate upper surface of the present invention is concordant with the upper surface of chip carrying disk disk body.
Compared with prior art, the invention has the beneficial effects as follows: after adopting embodiment of the present invention, the heat that in MOCVD reaction chamber, slide glass dish is conducted by rotating support shaft greatly reduces, thus easierly can form uniform heat-field on chip carrying disk surface.And after being reduced by rotating support shaft dispersed heat, require significantly to reduce to the heating power of heating unit inner ring, thus reduce the surface load of heating unit inner ring, improve the work-ing life of inner ring.After rotating support shaft adopts the design of heat-insulating type, rotating support shaft temperature of lower also will decline, thus reduce the cooling requirement of back shaft bottom, and corresponding cooling structure design also can obtain certain simplification.The reduction that heating power and cooling require also will reduce the energy consumption of MOCVD device, further for energy-saving and emission-reduction contribute.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of existing widely used MOCVD reactor;
Fig. 2 is a kind of heater structure schematic diagram of now widely used MOCVD reactor;
Fig. 3 is the structural representation of a kind of embodiment of the present invention;
Fig. 4 is the local structure enlarged view of Fig. 3;
Fig. 5 is the structural representation of shack of the present invention;
Fig. 6 is the structural representation of securing cover plate of the present invention;
Fig. 7 is the structural representation of the another kind of shack of the present invention.
Embodiment
Figure 3 shows that a kind of embodiment schematic diagram of the present invention, Fig. 4 is the partial enlarged drawing of Fig. 3.Composition graphs 3 consists predominantly of rotating support shaft base section 601, rotating support shaft top 605, collet 606, reinforcing sleeve 603 with the rotating support shaft 6 of the visible chip carrying disk of Fig. 4.Each integral part of above-mentioned rotating support shaft tightens together into as a whole by screw 602.In order to strengthen effect of heat insulation, being also distributed with heat insulating mattress 610 in the below of screw head or bolt head 604 and protecting the pad 609 of heat insulating mattress, above screw head or bolt head, being also distributed with an insulation plate 604.Chip carrying disk 9 is coupled with the top 605 of rotating support shaft 6, and chip carrying disk 9 consists predominantly of shack 901, securing cover plate 902, heat insulation cover plate 903, chip carrying disk disk body 904.Wafer shack 901 links together in the mode be threaded with securing cover plate 902, and by fixing between the two for the disk body 904 of chip carrying disk.A heat insulation cover plate 903 is also coated with above securing cover plate.
The bottom of rotating support shaft base section 601 is connected with rotary drive mechanism, and is distributed with the cooling structure of cooling sealing device, does not illustrate in figure.The upper part of 601 is furnished with the circular taper hole be coupled with collet 606, the tapped bind hole 615 be coupled with trip bolt or bolt 602 is also distributed with bottom taper hole, bottom tapped bind hole, be also distributed with breeder tube 607, the quantity of breeder tube 607 is one or more.
Bottom, rotating support shaft top 605 is the circular conical surface be coupled with collet 606, top, rotating support shaft top 605 is the circular conical surface be coupled with chip carrying disk connection portion, and rotating support shaft top 605 axial line is also distributed with the tapped bind hole 615 of band counterbore 614.During assembling, trip bolt or bolt 602 connect into as a whole by this through hole by 605,603,606,609,610,601.Wherein 610 is heat insulating mattress screw head or bolt head 613 separated with back shaft top 605, and 609 is the pad of the protection heat insulating mattress that intensity is larger.
Rotating support shaft is provided with collet 606, preferably the quantity of collet is two or more, separates between collet with reinforcing sleeve 603.
Rotating support shaft is provided with collet 606, heat insulating mattress 610, preferably makes the thermal conductivity of its material therefor significantly lower than the thermal conductivity of rotating support shaft base section 601 material therefor.
Rotating support shaft is provided with insulation plate 604, collet 606, heat insulating mattress 610, preferably the material of making collet 606, heat insulating mattress 610 is thermal insulation ceramics material, if porosity is the alumina-ceramic of 50%.
Rotating support shaft is provided with pad 609, reinforcing sleeve 603, the intensity preferably making 603,609 material therefors is greater than the intensity of collet 606, heat insulating mattress 610 material therefor.
Rotating support shaft is provided with pad 609, reinforcing sleeve 603, preferably making 603,609 material therefors is the pottery that refractory metal or intensity are higher.
Rotating support shaft is provided with pad 609, preferably the profile of pad 609 is conical, and the large end of its conical surface combines with heat insulating mattress 610, the little conical surface combines with screw head or bolt head 613.
Rotating support shaft is provided with insulation plate 604, preferably its profile is circular, and its diameter is slightly less than the diameter of counterbore 614.
Rotating support shaft is provided with insulation plate 604, preferably has a breeder tube to run through its upper and lower surface.
Rotating support shaft uses screw 602 to carry out fastening, and preferably screw 602 is distributed with the ventilating pit 611 that runs through its top and ground.
Chip carrying disk 9 includes chip carrying disk disk body 904, described disk body 904 shaft core position is distributed with a through hole 906, through hole is distributed with a counterbore 907 near the one side of placing wafer, and through hole is being distributed with a circular taper hole 905 on the surface relative with placing wafer surface.
Chip carrying disk 9 includes shack 901, described shack to be two-layerly made up of inside and outside, internal surface and the rotating support shaft top 605 of its inner ring are coupled, the circular taper hole 905 at its outer ring outer surface and chip carrying disk disk body 904 center is coupled, also divide on the top of inner ring and have a flat of thread 908(as shown in Figure 5), the screw thread of this flat of thread and securing cover plate 902 is coupled.Chip carrying disk disk body 904 is fixed with securing cover plate 902 by this coupled structure shack 901.
Chip carrying disk 9 includes securing cover plate 902, the bottom of securing cover plate 902 is one columnar structured, and columnar structured internal surface 909 is distributed with screw thread, and the screw thread 908 on this screw thread and shack 901 is coupled.The upper surface of 902 is distributed with some circular pimple 910(as shown in Figure 6), heat insulation cover plate 903 is placed in pimple 910, thus between securing cover plate 902 and heat insulation cover plate 903, form small heat insulation gap 911.
Chip carrying disk 9 includes heat insulation cover plate 903, preferably the upper surface of heat insulation cover plate 903 is concordant with the upper surface of chip carrying disk 904.
Securing cover plate 902 is distributed with some pimples 910, the quantity of preferably pimple 910 is more than or equal to 3, and 910 are uniformly distributed around 902 axle center on 902 upper surfaces.
Figure 7 shows that another kind of embodiment schematic diagram of the present invention, in this embodiment, adopt thermal conductivity very little between the inner ring of shack and outer shroud sparse ceramic 701 are connected.
According to the requirement of patent laws, what the present invention's embodiment was detailed describes invented concrete structure and the feature for the treatment of process thereof.But should be appreciated that described example just in order to better state structure of the present invention and feature, the present invention is not limited to the shown and characteristic that describes herein.Therefore, the present invention states herein, changes or be out of shape all to be included in the protection domain of appending claims the various forms of equalizations of enforcement of the present invention.
Claims (15)
1. the back shaft for MOCVD reactor, it is characterized in that, comprise (601) bottom the back shaft for being connected with rotary drive mechanism, in the middle part of the back shaft be made up of at least one collet (606), and the back shaft top (605) for being coupled with chip carrying disk (9); In the middle part of described back shaft top (605), back shaft and be fixedly linked between (601) bottom back shaft, and be communicated with gas passage between (601) in the middle part of (601), back shaft and bottom back shaft bottom back shaft; Described back shaft top (605) is in taper type, and shack (901) is equipped with at this back shaft top (605), and securing cover plate (902) is equipped with at shack (901) top, and heat insulation cover plate (903) is equipped with at described securing cover plate (902) top.
2. the back shaft for MOCVD reactor according to claim 1, is characterized in that, the quantity of described collet (606) is 1 ~ 20; When collet (606) is for time multiple, be provided with reinforcing sleeve (603) between adjacent two collets (606), this reinforcing sleeve (603) is provided with centre hole.
3. the back shaft for MOCVD reactor according to claim 1, it is characterized in that, be provided with counterbore (614) in described back shaft top (605), have hole in the middle part of described back shaft, bottom described back shaft, (601) all have tapped bind hole (615); Be fixedly linked by trip bolt or bolt (602) between (601) in the middle part of described back shaft top (605), back shaft and bottom back shaft, wherein the screw head of trip bolt or bolt (602) or bolt head (613) are positioned at the counterbore (614) of back shaft top (605), are positioned at described tapped bind hole (615) through the trip bolt in the hole in the middle part of back shaft or the screw rod of bolt (602); Described trip bolt or bolt (602) have the ventilating pit (611) of through trip bolt or bolt (602) upper and lower surface along its axis; The bottom of described trip bolt or bolt (602) is communicated with (601) outside surface bottom back shaft by a breeder tube (607).
4. the back shaft for MOCVD reactor according to claim 3, it is characterized in that, between the bottom face of the counterbore (614) of described back shaft top (605) and described screw head or bolt head (613), heat insulating mattress (610) be housed and strengthen padding (609).
5. the back shaft for MOCVD reactor according to claim 4, is characterized in that, conically, the large end of its conical surface and heat insulating mattress (610) are fitted, conical surface small end and screw head or bolt head (613) are fitted in described reinforcement pad (609).
6. the back shaft for MOCVD reactor according to claim 1, is characterized in that, described shack (901) and securing cover plate (902) are for being threaded.
7. the back shaft for MOCVD reactor according to claim 3, it is characterized in that, described trip bolt or bolt (602) top are provided with the insulation plate (604) of the counterbore (614) being positioned at described back shaft top (605), this insulation plate (604) have the ventilating pit (608) running through insulation plate (604) upper and lower surface; The ventilating pit (611) of described trip bolt or bolt (602) is communicated with the ventilating pit (608) of insulation plate (604).
8. the back shaft for MOCVD reactor according to claim 1, is characterized in that, has gap (911) between described securing cover plate (902) and heat insulation cover plate (903).
9. the back shaft for MOCVD reactor according to claim 8, is characterized in that, described securing cover plate (902) end face has at least three projections (910), and described heat insulation cover plate (903) is placed at least three projections (910).
10. the back shaft for MOCVD reactor according to claim 2, is characterized in that, described reinforcing sleeve (603) is made up of refractory metal or pottery.
11. back shafts for MOCVD reactor according to claim 3, is characterized in that, described trip bolt or bolt (602) are made up of refractory metal.
12. the back shaft for MOCVD reactor according to claim 1 or 6, is characterized in that, described shack (901) comprises inner ring and outer shroud, and is arranged on the web member between inner ring and outer shroud.
13. back shafts for MOCVD reactor according to claim 12, is characterized in that, described web member is the disc or spoke that have stupalith to make.
14. back shafts for MOCVD reactor according to claim 10 or 11, it is characterized in that, described refractory metal is tungsten or molybdenum.
15. a MOCVD reactor, comprise rotating support shaft (6) and be contained in the chip carrying disk (9) on rotating support shaft (6) top, be positioned at the spray header (12) of chip carrying disk (9) top; It is characterized in that, described chip carrying disk (9) comprises chip carrying disk disk body (904), be arranged on the through hole (906) of chip carrying disk disk body (904) shaft core position, the top of this through hole (906) is for being arranged on the counterbore (907) of chip carrying disk disk body (904) upper surface shaft core position, and the bottom of this through hole (906) is tapered hole (905); Described rotating support shaft (6) is the back shaft one of claim 1 ~ 13 Suo Shu, described heat insulation cover plate (903) and securing cover plate (902) are positioned at the counterbore (907) of this chip carrying disk disk body (904), and the outside surface of described shack (901) is positioned at the tapered hole (905) of described through hole (906); For being threaded between described securing cover plate (902) and shack (901).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310338182.9A CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
| PCT/CN2014/072696 WO2015018201A1 (en) | 2013-08-06 | 2014-02-28 | Support shaft for mocvd reactor and mocvd reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310338182.9A CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
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| Publication Number | Publication Date |
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| CN103436862A CN103436862A (en) | 2013-12-11 |
| CN103436862B true CN103436862B (en) | 2015-04-22 |
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| CN201310338182.9A Active CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
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| CN (1) | CN103436862B (en) |
| WO (1) | WO2015018201A1 (en) |
Families Citing this family (9)
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| CN103436862B (en) * | 2013-08-06 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | MOCVD reactor and support shaft for MOCVD reactor |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| CN105695955A (en) * | 2016-03-30 | 2016-06-22 | 广东工业大学 | Reaction cavity structure of metal organic chemical vapor deposition equipment |
| US11339478B2 (en) | 2016-09-19 | 2022-05-24 | King Abdullah University Of Science And Technology | Susceptor |
| US11979965B2 (en) | 2017-01-10 | 2024-05-07 | King Abdullah University Of Science And Technology | Susceptors for induction heating with thermal uniformity |
| CN109957835B (en) * | 2017-12-14 | 2021-08-27 | 中微半导体设备(上海)股份有限公司 | Chemical vapor deposition or epitaxial layer growth reactor and rotating shaft in same |
| CN108277525A (en) * | 2018-04-25 | 2018-07-13 | 哈尔滨奥瑞德光电技术有限公司 | A kind of supporting structure of fixed large size single crystal stove thermal field |
| CN110512191B (en) * | 2019-07-12 | 2021-05-14 | 郑州磨料磨具磨削研究所有限公司 | Tool and method for determining tray structure for MPCVD device |
| CN115307751B (en) * | 2022-09-01 | 2023-08-29 | 江苏实为半导体科技有限公司 | Mocvd heater temperature monitoring device and method |
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| Publication number | Publication date |
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| CN103436862A (en) | 2013-12-11 |
| WO2015018201A1 (en) | 2015-02-12 |
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