CN103436862A - MOCVD reactor and support shaft for MOCVD reactor - Google Patents
MOCVD reactor and support shaft for MOCVD reactor Download PDFInfo
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- CN103436862A CN103436862A CN2013103381829A CN201310338182A CN103436862A CN 103436862 A CN103436862 A CN 103436862A CN 2013103381829 A CN2013103381829 A CN 2013103381829A CN 201310338182 A CN201310338182 A CN 201310338182A CN 103436862 A CN103436862 A CN 103436862A
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- back shaft
- support shaft
- cover plate
- bolt
- mocvd reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
The invention discloses an MOCVD (metal organic chemical vapor deposition) reactor and a support shaft for the MOCVD reactor. The problems that an inner ring heater is low in power utilization ratio, a load of the surface of the inner ring heater is high, and a cooling requirement below the support shaft is high due to the fact that the available support shaft is large in heat conductivity coefficient, and the heat transmission capacity of a slide glass disk to the support shaft is great are solved. The support shaft for the MOCVD reactor comprises a support shaft bottom, a support shaft middle and a support shaft top, wherein the support shaft top, the support shaft middle and the support shaft bottom are fixedly connected; gas channels are communicated among the support shaft bottom, the support shaft middle and the support shaft top; the support shaft top is frustum-shaped, and is provided with a connecting ring; a fixed cover plate is mounted at the top of the connecting ring; and a heat insulation cover plate is mounted at the top of the fixed cover plate. According to the MOCVD reactor and the support shaft, the service life of the inner ring heater is prolonged; the normal working time of equipment is prolonged; the complete power is reduced; and an energy-saving effect is improved.
Description
Technical field
The present invention relates to a kind of back shaft for the MOCVD reactor and MOCVD reactor, particularly a kind of rotating support shaft for the metal organic chemical vapor deposition reactor and chip carrying disk.
Background technology
MOCVD(Metal Organic Chemical Vapor Deposition) equipment, it is metal-organic chemical vapor deposition equipment, it reacts the metallorganics source (MO source) of containing II family or III family element and the gas source that contains VI family or group Ⅴ element under the strict condition of controlling on wafer, and growth obtains needed thin-film material.
Temperature field is to need one of key parameter of controlling in MOCVD, because participate in the lysis efficiency difference of each material of reaction under differing temps, because the speed of MOCVD film formation reaction under hot conditions is very fast, therefore on the slide glass dish wafer everywhere the lysis efficiency difference of reaction material will cause wafer on the slide glass dish everywhere the component of thickness, the film of film forming occur different, thereby make the Quality Down of deposit film.
In order to make on the slide glass dish wafer temperature everywhere consistent, as shown in Figure 1, reactant gases is from gas interface 12 access spray headers 1 for a kind of design generally adopted at present, and reactant gases enters in reaction chamber 11 after the distribution of spray header.Wafer 10 is placed on chip carrying disk 9, under chip carrying disk, is the heating unit 2,3,4 of segmentation, for conserve energy heating unit below also is distributed with thermoscreen 8.In order to make slide glass panel surface temperature even, the axle 6 of placing the slide glass dish also can drive the slide glass disc spins, in order to make the further thermally equivalent of slide glass dish.The heating unit schematic diagram as shown in Figure 2, wherein the centre circle well heater plays main heat effect, wafer generally is placed on this zone, and inner ring mainly plays compensate for wafer load plate back shaft conduction institute dispersed heat, and compensate for wafer load plate edge is mainly played due to extra heat radiation and convection current dispersed heat in outer ring.
Mainly there are following defect in the chip carrying disk of current use and back shaft: 1. back shaft heat conduction is fast, therefore its heat dissipation capacity is large, the dispersed heat in order to compensate, the heating power of inner ring well heater is very large, the surface load of well heater is large, cause the inner ring well heater easily to damage, be unfavorable for the long-term stable operation of equipment.2. because the back shaft temperature is higher, and the tightness system of axle below can not be subject to high temperature, therefore, to cooling require high.3. the inner ring heater power is large, and the power of the cooling needs of below is also larger, large to energy consumption, not energy-conservation.
Summary of the invention
Large in order to overcome existing back shaft thermal conductivity, the slide glass dish is large toward the back shaft heat transfer capacity, cause the power utilization of inner ring well heater low, the surface load of inner ring heating is high, the high deficiency of cooling requirement of back shaft below, the present invention aims to provide a kind of back shaft for the MOCVD reactor and MOCVD reactor, and this back shaft and MOCVD reactor have improved the work-ing life of inner ring well heater, has extended equipment normal operation duration, and reduced complete machine power, promoted energy-saving effect.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of back shaft for the MOCVD reactor, its constructional feature is, comprises the back shaft bottom for being connected with rotary drive mechanism, the back shaft formed by least one collet middle part, and for the back shaft top with the chip carrying disk coupling; Be fixedly linked between described back shaft top, back shaft middle part and back shaft bottom, and be communicated with the gas passage between back shaft bottom, back shaft middle part and back shaft bottom; Described back shaft top is taper type, and shack is equipped with at this back shaft top, and securing cover plate is equipped with at the shack top, and heat insulation cover plate is equipped with at described securing cover plate top.
The connection portion of each parts all is designed to have the conical surface of self-centering ability, has guaranteed the concentricity of assembling rear rotating support shaft bottom and conical top.
Be below the technical scheme of further improvement of the present invention:
Further, the quantity of described collet is 1 ~ 20; While being a plurality of, between adjacent two collets, be provided with reinforcing sleeve when collet, this reinforcing sleeve is provided with centre hole.
Described back shaft is provided with counterbore in top, and described back shaft middle part has hole, and described back shaft bottom all has tapped bind hole; Between described back shaft top, back shaft middle part and back shaft bottom, by trip bolt or bolt, be fixedly linked, wherein the screw head of trip bolt or bolt or bolt head are positioned at the counterbore at back shaft top, through the trip bolt in the hole in the middle part of back shaft or the screw rod of bolt, are positioned at described tapped bind hole; Described trip bolt or bolt have the ventilating pit that connects trip bolt or bolt upper and lower surface along its axis; The bottom of described trip bolt or bolt is communicated with the back shaft bottom outer surface by a breeder tube.Rotating support shaft each several part stack be assembled together rear employing screw carry out fastening, to guarantee the reliability of choosing dress back shaft.
Between the bottom face of the counterbore at described back shaft top and described screw head or bolt head, heat insulating mattress and heating cushion are housed.
It is conical that described reinforcement pad is, the large end of its conical surface and heat insulating mattress laminating, conical surface small end and screw head or bolt head laminating.
Described shack with securing cover plate for being threaded.
Described trip bolt or bolt top are provided with the insulation plate of the counterbore that is positioned at described back shaft top, have the ventilating pit that runs through the insulation plate upper and lower surface on this insulation plate; The ventilating pit of described trip bolt or bolt is communicated with the ventilating pit of insulation plate.
There is gap between described securing cover plate and heat insulation cover plate.
Described securing cover plate end face has at least three projections, and described heat insulation cover plate is placed at least three projections.
Described reinforcing sleeve is made by refractory metal or pottery; Described refractory metal is preferably tungsten, molybdenum; Described pottery is preferably alumina-ceramic.
Described trip bolt or bolt are made by refractory metal.
Described shack comprises interior ring and outer shroud, and is arranged on the web member between interior ring and outer shroud.
Described web member is disc or the spoke that has stupalith to make.
A kind of MOCVD reactor, comprise rotating support shaft and the chip carrying disk that is contained in the rotating support shaft top, is positioned at the spray header of chip carrying disk top; Its constructional feature is, described chip carrying disk comprises the chip carrying disk disk body, is arranged on the through hole of chip carrying disk disk body shaft core position, and the top of this through hole is the counterbore that is arranged on chip carrying disk disk body upper surface shaft core position, and the bottom of this through hole is tapered hole; Described rotating support shaft is above-mentioned back shaft, and described heat insulation cover plate and securing cover plate are positioned at the counterbore of this chip carrying disk disk body, and the outside surface of described shack is positioned at the tapered hole of described through hole; Between described securing cover plate and shack for being threaded.
Thus, in order to strengthen effect of heat insulation, also designed and the chip carrying disk of back shaft coupling unit with Design on thermal insulation, further reduced chip carrying disk dispersed heat rotating support shaft.
Below the present invention is done to further detailed description.
Rotating support shaft of the present invention adopts the sectional type design, and back shaft bottom 601 is connected with rotary drive mechanism, and the back shaft middle portion is ceramic insulation cover 606, and top is the top 605 be coupled with chip carrying disk 9.Rotating support shaft each several part stack be assembled together rear employing screw 602 carry out fastening, to guarantee the reliability of rotating support shaft.In order to strengthen effect of heat insulation, also designed the chip carrying disk 9 of middle portion employing Design on thermal insulation, this chip carrying disk disk body part 904, for to be made by graphite or refractory metal, is distributed with a location tapered hole 905 near on the plane of back shaft in the middle of disk body.In the tapered hole 905 of location, the shack 901 be connected with rotating support shaft is installed, this shack 901 links together with mode and the chip carrying disk disk body 904 be threaded with securing cover plate 902, also is coated with a heat insulation cover plate 903 above securing cover plate 902.
The face that is of coupled connections of described each parts adopts the circular conical surface with self-centering ability, to guarantee the concentricity of each several part.
The quantity of described collet 606 can be selected according to the needs of effect of heat insulation, and its quantitative range is 1 ~ 20.Between described collet 606, reinforcing sleeve 603 is installed, the material of making reinforcing sleeve 603 is refractory metal or the higher pottery of intensity, as tungsten, molybdenum, aluminum oxide etc.
Be distributed with the ventilating pit 611 that runs through its upper and lower surface on described trip bolt or bolt 602, this trip bolt or bolt 602 are made by refractory metal, as tungsten, molybdenum.
Be distributed with heat insulating mattress 610 between described screw head or bolt head 613 and rotating support shaft top 605 and strengthen pad 609.The profile of described reinforcement pad 609 is conical, and the large end of its conical surface combines with heat insulating mattress 610, the little conical surface combines with screw head or bolt head 613.
The top of described rotating support shaft base section 601 is distributed with a tapered blind hole, is distributed with a tapped bind hole 615 in the bottom of blind hole, also is distributed with a breeder tube 607 in tapped bind hole 615 bottoms and joins with the outside surface of turning axle bottom.
Described screw head or bolt head top also are distributed with insulation plate 604, are distributed with the ventilating pit 608 that runs through its upper and lower surface on this insulation plate 604.Described insulation plate 604, collet 606, heat insulating mattress 610 adopts pottery or other lagging materials with effect of heat insulation to make, as the porosity aluminum oxide that is 50%.
Describedly be distributed with some circular pimples 910 on the upper surface of securing cover plate 902, the quantity of projection 910 is more than or equal to 3, and some pimples 910 are uniformly distributed around securing cover plate 902 axle center on securing cover plate 902 upper surfaces.
Described heat insulation cover plate 903 is placed in the pimple 910 of securing cover plate 902 upper surfaces, and small heat insulation gap 911 is arranged between described securing cover plate 902 and heat insulation cover plate 903.
The upper surface of described heat insulation cover plate 903 is concordant with the upper surface of chip carrying disk 904.
Described shack 901 two-layerly consists of inside and outside, with top 605 and chip carrying disk disk body 904, be coupled respectively, the inside and outside two-layer of described shack 901 can connect into as a whole by disc or spoke, also can be connected into by lagging material as a whole, this lagging material can be one or more, with alternate form, distributes.
The top of described shack 901 is also divided a flat of thread 908, corresponding, and the bottom of described securing cover plate 902 is one columnar structured, on columnar structured internal surface 909, is distributed with screw thread,
The shaft core position of described chip carrying disk disk body 904 is distributed with a through hole 906, and through hole is distributed with a counterbore 907 near the one side of placing wafer, and through hole is distributed with a circular taper hole 905 on the surface near relative with placing wafer surface.
Adopt the pottery that refractory metal or intensity are higher bottom rotating support shaft of the present invention or made by pottery and metal mixed with the form of inlaying.The below of rotating support shaft bottom also be designed with cooling structure with the sealing position of guaranteeing rotating support shaft in lower temperature.The top of rotating support shaft base section also is distributed with a tapered blind hole, in the bottom of blind hole, is distributed with a tapped bind hole, in the tapped bind hole bottom, has the outside surface of a breeder tube and turning axle bottom to join.
The rotating support shaft collet of the present invention pottery with effect of heat insulation of serving as reasons is made, as the porosity aluminum oxide that is 50%.Rotating support shaft collet intermediate distribution has manhole, and preferably, the manhole diameter is than the large 0.5 ~ 2mm of the diameter of fastening screw used.Can adopt as required polylith ceramic insulation body to strengthen effect of heat insulation, be energy refractory metal or the ceramic higher strengthening ring of intensity of making between each ceramic insulation body, in order to avoid ceramic because crack appears in stress.
As a kind of preferred version, the joint face of described rotating support shaft collet and other parts is the circular conical surface.
As a kind of preferred version, the joint face of described strengthening ring and other parts is the circular conical surface.
As a kind of preferred version, the circular conical surface of above-mentioned each part fits tightly.
Rotating support shaft top of the present invention is for to be made by refractory metal or the larger stupalith of intensity, its lower surface and heat insulation coupling, and the support ring of upper surface and chip carrying disk is coupled.Shaft core position on the rotating support shaft top also is distributed with the through hole with counterbore.
As a kind of preferred version, described through hole and counterbore are all circular.
The fastening screw used of rotating support shaft of the present invention is made by refractory metal, also is distributed with a small through hole that runs through its bottom surface and end face on screw.Between screw and rotating support shaft top, the heat insulation collar and pad are installed.The described heat insulation collar is made by lagging material, and pad is made by refractory metal or the higher pottery of intensity.Above described screw head or bolt head, a heat insulation stopper also is installed, described heat insulation stopper one end is distributed with a circular blind hole, during installation, has blind hole one end relative with screw head or bolt head, and plane is relative with chip carrying disk.
As a kind of preferred version, the described heat insulation collar is round shape, and the pad profile is that taper is round table-like, and an end and the heat insulation collar that pad is larger join, and a less end joins with screw head or bolt head.
As a kind of preferred version, described insulating sleeve and heat insulation stopper cylindrical outer surface are distributed with pimple.
The chip carrying disk of employing Design on thermal insulation of the present invention can be divided into two portions, and a part is for placing the disk body part of wafer, and another part is the connection portion be coupled with rotating support shaft, and these two portions are coupled by taper hole.The disk body part of described placement wafer is made by high temperature material, as graphite, SiC, tungsten, molybdenum etc.The connection portion of described chip carrying disk by refractory metal, metal mixture or intensity higher pottery make.
As a kind of preferred version, the connection portion of chip carrying disk disk body and chip carrying disk is coupled by the circular conical surface.
According to embodiments of the invention, connection portion of the present invention is comprised of three parts, is respectively: shack, securing cover plate, heat insulation cover plate.
According to embodiments of the invention, shack adopts the structure of inside and outside two annulars, and these inside and outside two annulus connect into as a whole by spoke sheet or little axle.Securing cover plate is threaded connection the disk body of chip carrying disk is fixed on shack.
According to embodiments of the invention, heat insulation cover plate is positioned on securing cover plate, and the material of heat insulation cover plate is the refractory materials such as sapphire, SiC.
As a kind of preferred version, heat insulation cover plate upper surface of the present invention is concordant with the upper surface of chip carrying disk disk body.
Compared with prior art, the invention has the beneficial effects as follows: after adopting embodiment of the present invention, the heat that in the MOCVD reaction chamber, the slide glass dish conducts by rotating support shaft greatly reduces, thereby can easierly on the chip carrying disk surface, form uniform heat-field.And after reducing by the rotating support shaft dispersed heat, to the significantly minimizing of heating power requirement of heating unit inner ring, thus the surface load of reduction heating unit inner ring, the work-ing life of improving inner ring.After rotating support shaft adopts the design of heat-insulating type, the rotating support shaft temperature of lower also will descend, thereby reduce the cooling requirement of back shaft bottom, and corresponding cooling structure design also can obtain certain simplification.The reduction of heating power and cooling requirement also will further reduce the energy consumption of MOCVD equipment, for energy-saving and emission-reduction contribute.
Below in conjunction with drawings and Examples, the present invention is further elaborated.
The accompanying drawing explanation
The structural representation that Fig. 1 is a kind of existing widely used MOCVD reactor;
A kind of heater structure schematic diagram that Fig. 2 is now widely used MOCVD reactor;
The structural representation that Fig. 3 is a kind of embodiment of the present invention;
The local structure enlarged view that Fig. 4 is Fig. 3;
The structural representation that Fig. 5 is shack of the present invention;
The structural representation that Fig. 6 is securing cover plate of the present invention;
The structural representation that Fig. 7 is the another kind of shack of the present invention.
Embodiment
Figure 3 shows that a kind of embodiment schematic diagram of the present invention, the partial enlarged drawing that Fig. 4 is Fig. 3.Rotating support shaft 6 in conjunction with Fig. 3 and the visible chip carrying disk of Fig. 4 consists predominantly of rotating support shaft base section 601, rotating support shaft top 605, collet 606, reinforcing sleeve 603.Each integral part of above-mentioned rotating support shaft tightens together into as a whole by screw 602.In order to strengthen effect of heat insulation, also be distributed with the pad 609 of heat insulating mattress 610 and protection heat insulating mattress below screw head or bolt head 604, also be distributed with an insulation plate 604 above screw head or bolt head.Chip carrying disk 9 is coupled with the top 605 of rotating support shaft 6, and chip carrying disk 9 consists predominantly of shack 901, securing cover plate 902, heat insulation cover plate 903, chip carrying disk disk body 904.Wafer shack 901 links together in the mode be threaded with securing cover plate 902, and the disk body of chip carrying disk 904 is fixing between the two.Also be coated with a heat insulation cover plate 903 above securing cover plate.
The bottom of rotating support shaft base section 601 is connected with rotary drive mechanism, and is distributed with the cooling structure of cooling sealing device, in figure, does not illustrate.601 top is distributed with the circular taper hole be coupled with collet 606, also be distributed with the tapped bind hole 615 with trip bolt or bolt 602 couplings in the taper hole bottom, also be distributed with breeder tube 607 in the tapped bind hole bottom, the quantity of breeder tube 607 is one or more.
605 bottoms, rotating support shaft top are the circular conical surface be coupled with collet 606,605 tops, rotating support shaft top are and the circular conical surface of chip carrying disk connection portion coupling, also are distributed with the tapped bind hole 615 with counterbore 614 on 605 axial lines of rotating support shaft top.During assembling, trip bolt or bolt 602 connect into as a whole by this through hole by 605,603,606,609,610,601.610 heat insulating mattresss for screw head or bolt head 613 and back shaft top 605 are separated wherein, 609 pads that are the protection heat insulating mattress that intensity is larger.
It is fastening that rotating support shaft is used screw 602 to carry out, and preferably screw 602 is distributed with a ventilating pit 611 that runs through its top and ground.
Chip carrying disk 9 includes chip carrying disk disk body 904, described disk body 904 shaft core positions are distributed with a through hole 906, through hole is distributed with a counterbore 907 near the one side of placing wafer, and through hole is distributed with a circular taper hole 905 on the surface near relative with placing wafer surface.
Include shack 901 on chip carrying disk 9, described shack two-layerly consists of inside and outside, in it, internal surface and the rotating support shaft top 605 of ring are coupled, the circular taper hole 905 at its outer ring outer surface and chip carrying disk disk body 904 centers is coupled, also divide and a flat of thread 908(arranged as shown in Figure 5 on the top of interior ring), the screw thread of this flat of thread and securing cover plate 902 is coupled.By this coupled structure shack 901 and securing cover plate 902, that chip carrying disk disk body 904 is fixing.
Include securing cover plate 902 on chip carrying disk 9, the bottom of securing cover plate 902 is one columnar structured, on columnar structured internal surface 909, is distributed with screw thread, and the screw thread 908 on this screw thread and shack 901 is coupled.Be distributed with some circular pimple 910(as shown in Figure 6 on 902 upper surface), heat insulation cover plate 903 is placed in pimple 910, thereby forms small heat insulation gap 911 between securing cover plate 902 and heat insulation cover plate 903.
Include heat insulation cover plate 903 on chip carrying disk 9, preferably the upper surface of heat insulation cover plate 903 is concordant with the upper surface of chip carrying disk 904.
Be distributed with some pimples 910 on securing cover plate 902, preferably the quantity of pimple 910 is more than or equal to 3, and 910 are uniformly distributed around 902 axle center on 902 upper surfaces.
Figure 7 shows that another kind of embodiment schematic diagram of the present invention, in this embodiment, adopt very little sparse ceramic 701 being connected of thermal conductivity between the interior ring of shack and outer shroud.
According to the requirement of patent law regulation, the description that the present invention is detailed with embodiment the concrete structure invented and the feature for the treatment of process thereof.Yet, should be appreciated that described example is just for better statement structure of the present invention and feature, the present invention is not limited to the shown and characteristic described herein.Therefore, the present invention states herein, and enforcement of the present invention various forms of impartial changed or distortion all is included in the protection domain of appending claims.
Claims (15)
1. the back shaft for the MOCVD reactor, it is characterized in that, comprise the back shaft bottom (601) for being connected with rotary drive mechanism, the back shaft formed by least one collet (606) middle part, and for the back shaft top (605) with chip carrying disk (9) coupling; Be fixedly linked between described back shaft top (605), back shaft middle part and back shaft bottom (601), and be communicated with the gas passage between back shaft bottom (601), back shaft middle part and back shaft bottom (601); Described back shaft top (605) is taper type, and shack (901) is equipped with at this back shaft top (605), and securing cover plate (902) is equipped with at shack (901) top, and heat insulation cover plate (903) is equipped with at described securing cover plate (902) top.
2. the back shaft for the MOCVD reactor according to claim 1, is characterized in that, the quantity of described collet (606) is 1 ~ 20; While being a plurality of, be provided with reinforcing sleeve (603) when collet (606) between adjacent two collets (606), this reinforcing sleeve (603) is provided with centre hole.
3. the back shaft for the MOCVD reactor according to claim 1, it is characterized in that, be provided with counterbore (614) in described back shaft top (605), described back shaft middle part has hole, and described back shaft bottom (601) all has tapped bind hole (615); Between described back shaft top (605), back shaft middle part and back shaft bottom (601), by trip bolt or bolt (602), be fixedly linked, wherein the screw head of trip bolt or bolt (602) or bolt head (613) are positioned at the counterbore (614) of back shaft top (605), through the trip bolt in the hole in the middle part of back shaft or the screw rod of bolt (602), are positioned at described tapped bind hole (615); Described trip bolt or bolt (602) have the ventilating pit (611) that connects trip bolt or bolt (602) upper and lower surface along its axis; The bottom of described trip bolt or bolt (602) is communicated with back shaft bottom (601) outside surface by a breeder tube (607).
4. the back shaft for the MOCVD reactor according to claim 3, it is characterized in that, heat insulating mattress (610) and heating cushion (609) are housed between the bottom face of the counterbore (614) at described back shaft top (605) and described screw head or bolt head (613).
5. the back shaft for the MOCVD reactor according to claim 4, is characterized in that, it is conical that described reinforcement pad (609) is, the large end of its conical surface and heat insulating mattress (610) laminating, conical surface small end and screw head or bolt head (613) laminating.
6. the back shaft for the MOCVD reactor according to claim 1, is characterized in that, described shack (901) with securing cover plate (902) for being threaded.
7. the back shaft for the MOCVD reactor according to claim 3, it is characterized in that, described trip bolt or bolt (602) top is provided with the insulation plate (604) of the counterbore (614) that is positioned at described back shaft top (605), has the ventilating pit (608) that runs through insulation plate (604) upper and lower surface on this insulation plate (604); The ventilating pit (611) of described trip bolt or bolt (602) is communicated with the ventilating pit (608) of insulation plate (604).
8. the back shaft for the MOCVD reactor according to claim 1, is characterized in that, between described securing cover plate (902) and heat insulation cover plate (903), has gap (911).
9. the back shaft for the MOCVD reactor according to claim 8, is characterized in that, described securing cover plate (902) end face has at least three projections (910), and described heat insulation cover plate (903) is placed at least three projections (910).
10. the back shaft for the MOCVD reactor according to claim 2, is characterized in that, described reinforcing sleeve (603) is made by refractory metal or pottery.
11. the back shaft for the MOCVD reactor according to claim 3, is characterized in that, described trip bolt or bolt (602) are made by refractory metal.
12. according to the described back shaft for the MOCVD reactor of claim 1 or 6, it is characterized in that, described shack (901) comprises interior ring and outer shroud, and is arranged on the web member between interior ring and outer shroud.
13. the back shaft for the MOCVD reactor according to claim 12, is characterized in that, described web member is disc or the spoke that has stupalith to make.
14. according to the described back shaft for the MOCVD reactor of claim 10 or 11, it is characterized in that, described refractory metal is tungsten or molybdenum.
15. a MOCVD reactor, comprise rotating support shaft (6) and be contained in the chip carrying disk (9) on rotating support shaft (6) top, is positioned at the spray header (12) of chip carrying disk (9) top; It is characterized in that, described chip carrying disk (9) comprises chip carrying disk disk body (904), be arranged on the through hole (906) of chip carrying disk disk body (904) shaft core position, the top of this through hole (906) is for being arranged on the counterbore (907) of chip carrying disk disk body (904) upper surface shaft core position, and the bottom of this through hole (906) is tapered hole (905); One of described rotating support shaft (6) is claim 1 ~ 13 described back shaft, described heat insulation cover plate (903) and securing cover plate (902) are positioned at the counterbore (907) of this chip carrying disk disk body (904), and the outside surface of described shack (901) is positioned at the tapered hole (905) of described through hole (906); Between described securing cover plate (902) and shack (901) for being threaded.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310338182.9A CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
| PCT/CN2014/072696 WO2015018201A1 (en) | 2013-08-06 | 2014-02-28 | Support shaft for mocvd reactor and mocvd reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310338182.9A CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103436862A true CN103436862A (en) | 2013-12-11 |
| CN103436862B CN103436862B (en) | 2015-04-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201310338182.9A Active CN103436862B (en) | 2013-08-06 | 2013-08-06 | MOCVD reactor and support shaft for MOCVD reactor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| WO2015018201A1 (en) * | 2013-08-06 | 2015-02-12 | 中国电子科技集团公司第四十八研究所 | Support shaft for mocvd reactor and mocvd reactor |
| CN105695955A (en) * | 2016-03-30 | 2016-06-22 | 广东工业大学 | Reaction cavity structure of metal organic chemical vapor deposition equipment |
| WO2018051304A1 (en) | 2016-09-19 | 2018-03-22 | King Abdullah University Of Science And Technology | Susceptor |
| CN109957835A (en) * | 2017-12-14 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | A kind of chemical vapor deposition or outer layer growth reactor and its interior rotary shaft |
| CN110512191A (en) * | 2019-07-12 | 2019-11-29 | 郑州磨料磨具磨削研究所有限公司 | MPCVD device tray body, the tooling and method for determining MPCVD device support holder structure |
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| US11979965B2 (en) | 2017-01-10 | 2024-05-07 | King Abdullah University Of Science And Technology | Susceptors for induction heating with thermal uniformity |
| CN108277525A (en) * | 2018-04-25 | 2018-07-13 | 哈尔滨奥瑞德光电技术有限公司 | A kind of supporting structure of fixed large size single crystal stove thermal field |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322429A (en) * | 1989-06-19 | 1991-01-30 | Matsushita Electron Corp | Chemical vapor deposition device |
| JPH06326176A (en) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | Method and device for measuring self bias, and electrostatic attraction device |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| JP5064595B1 (en) * | 2011-10-26 | 2012-10-31 | シャープ株式会社 | Vapor growth equipment |
| JP2013115264A (en) * | 2011-11-29 | 2013-06-10 | Tokyo Electron Ltd | Processed wafer support structure and plasma processing apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3032087B2 (en) * | 1992-07-28 | 2000-04-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN101802254B (en) * | 2007-10-11 | 2013-11-27 | 瓦伦斯处理设备公司 | Chemical vapor deposition reactor |
| US8021487B2 (en) * | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
| CN202492576U (en) * | 2012-02-20 | 2012-10-17 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition device |
| CN102864437B (en) * | 2012-09-28 | 2014-04-09 | 深圳市捷佳伟创新能源装备股份有限公司 | Rotating device for reaction chamber |
| CN103436862B (en) * | 2013-08-06 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | MOCVD reactor and support shaft for MOCVD reactor |
-
2013
- 2013-08-06 CN CN201310338182.9A patent/CN103436862B/en active Active
-
2014
- 2014-02-28 WO PCT/CN2014/072696 patent/WO2015018201A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322429A (en) * | 1989-06-19 | 1991-01-30 | Matsushita Electron Corp | Chemical vapor deposition device |
| JPH06326176A (en) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | Method and device for measuring self bias, and electrostatic attraction device |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| JP5064595B1 (en) * | 2011-10-26 | 2012-10-31 | シャープ株式会社 | Vapor growth equipment |
| JP2013115264A (en) * | 2011-11-29 | 2013-06-10 | Tokyo Electron Ltd | Processed wafer support structure and plasma processing apparatus |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015018201A1 (en) * | 2013-08-06 | 2015-02-12 | 中国电子科技集团公司第四十八研究所 | Support shaft for mocvd reactor and mocvd reactor |
| CN104046965A (en) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | Radiant heating element, radiant heater and MOCVD reactor |
| CN105695955A (en) * | 2016-03-30 | 2016-06-22 | 广东工业大学 | Reaction cavity structure of metal organic chemical vapor deposition equipment |
| WO2018051304A1 (en) | 2016-09-19 | 2018-03-22 | King Abdullah University Of Science And Technology | Susceptor |
| US11339478B2 (en) | 2016-09-19 | 2022-05-24 | King Abdullah University Of Science And Technology | Susceptor |
| CN109957835A (en) * | 2017-12-14 | 2019-07-02 | 中微半导体设备(上海)股份有限公司 | A kind of chemical vapor deposition or outer layer growth reactor and its interior rotary shaft |
| CN110512191A (en) * | 2019-07-12 | 2019-11-29 | 郑州磨料磨具磨削研究所有限公司 | MPCVD device tray body, the tooling and method for determining MPCVD device support holder structure |
| CN110512191B (en) * | 2019-07-12 | 2021-05-14 | 郑州磨料磨具磨削研究所有限公司 | Tool and method for determining tray structure for MPCVD device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015018201A1 (en) | 2015-02-12 |
| CN103436862B (en) | 2015-04-22 |
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