CN103426913B - 一种部分soi超结高压功率半导体器件 - Google Patents
一种部分soi超结高压功率半导体器件 Download PDFInfo
- Publication number
- CN103426913B CN103426913B CN201310345306.6A CN201310345306A CN103426913B CN 103426913 B CN103426913 B CN 103426913B CN 201310345306 A CN201310345306 A CN 201310345306A CN 103426913 B CN103426913 B CN 103426913B
- Authority
- CN
- China
- Prior art keywords
- type
- district
- electric field
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 230000005684 electric field Effects 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 12
- 230000001934 delay Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000002787 reinforcement Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310345306.6A CN103426913B (zh) | 2013-08-09 | 2013-08-09 | 一种部分soi超结高压功率半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310345306.6A CN103426913B (zh) | 2013-08-09 | 2013-08-09 | 一种部分soi超结高压功率半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103426913A CN103426913A (zh) | 2013-12-04 |
CN103426913B true CN103426913B (zh) | 2016-08-31 |
Family
ID=49651413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310345306.6A Expired - Fee Related CN103426913B (zh) | 2013-08-09 | 2013-08-09 | 一种部分soi超结高压功率半导体器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103426913B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107359193B (zh) * | 2017-07-28 | 2019-12-10 | 电子科技大学 | 一种ldmos器件 |
CN107359195B (zh) * | 2017-07-31 | 2020-12-29 | 电子科技大学 | 一种高耐压横向超结器件 |
CN114695510A (zh) * | 2020-12-30 | 2022-07-01 | 无锡华润上华科技有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
CN102082169A (zh) * | 2010-12-08 | 2011-06-01 | 四川长虹电器股份有限公司 | 部分soi横向双扩散器件 |
CN102201445A (zh) * | 2011-04-14 | 2011-09-28 | 中北大学 | 一种psoi横向超结功率半导体器件 |
CN103165678A (zh) * | 2013-03-12 | 2013-06-19 | 电子科技大学 | 一种超结ldmos器件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6461902B1 (en) * | 2000-07-18 | 2002-10-08 | Institute Of Microelectronics | RF LDMOS on partial SOI substrate |
-
2013
- 2013-08-09 CN CN201310345306.6A patent/CN103426913B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
CN102082169A (zh) * | 2010-12-08 | 2011-06-01 | 四川长虹电器股份有限公司 | 部分soi横向双扩散器件 |
CN102201445A (zh) * | 2011-04-14 | 2011-09-28 | 中北大学 | 一种psoi横向超结功率半导体器件 |
CN103165678A (zh) * | 2013-03-12 | 2013-06-19 | 电子科技大学 | 一种超结ldmos器件 |
Also Published As
Publication number | Publication date |
---|---|
CN103426913A (zh) | 2013-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103165678B (zh) | 一种超结ldmos器件 | |
CN101552291B (zh) | N沟道超结纵向双扩散金属氧化物半导体管 | |
CN102184944B (zh) | 一种横向功率器件的结终端结构 | |
CN107204372A (zh) | 一种优化终端结构的沟槽型半导体器件及制造方法 | |
CN102184939B (zh) | 一种具有高k介质槽的半导体功率器件 | |
CN103219386B (zh) | 一种具有高k绝缘区的横向功率器件 | |
CN102097484B (zh) | 一种多通道ldmos及其制备方法 | |
CN104518023B (zh) | 高压ldmos器件 | |
CN102201445B (zh) | 一种psoi横向超结功率半导体器件 | |
CN106887466A (zh) | 一种二维类超结ldmos器件及其制备方法 | |
CN102593178B (zh) | 具有超结结构的半导体器件及其制作方法 | |
CN106129117A (zh) | 一种高可靠性的横向双扩散金属氧化物半导体管 | |
CN103426913B (zh) | 一种部分soi超结高压功率半导体器件 | |
CN103489915A (zh) | 一种横向高压超结功率半导体器件 | |
CN106887451B (zh) | 超结器件及其制造方法 | |
CN102263125A (zh) | 一种横向扩散金属氧化物功率mos器件 | |
CN110047930A (zh) | Vdmos器件 | |
CN206976353U (zh) | 一种优化终端结构的沟槽型半导体器件 | |
CN105789270A (zh) | 一种具有变k介质侧边的vdmos器件 | |
CN106252393A (zh) | 横向高压功率器件的结终端结构 | |
CN115332338B (zh) | 一种调节动态特性的超结vdmos器件及制备方法 | |
CN104617139B (zh) | Ldmos器件及制造方法 | |
CN103560148B (zh) | 一种超结器件的结终端结构及其制造方法 | |
CN102931218B (zh) | 超结器件的结终端结构 | |
CN108767013A (zh) | 一种具有部分埋层的sj-ldmos器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERIN Effective date: 20140805 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140805 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: University of Electronic Science and Technology of China Applicant after: Institute of Electronic and Information Engineering In Dongguan, UESTC Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: University of Electronic Science and Technology of China |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20190809 |
|
CF01 | Termination of patent right due to non-payment of annual fee |