CN103413791A - Ceramic copper-coated film heat sink module with good heat dissipation efficiency and manufacturing method thereof - Google Patents

Ceramic copper-coated film heat sink module with good heat dissipation efficiency and manufacturing method thereof Download PDF

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Publication number
CN103413791A
CN103413791A CN2013103701507A CN201310370150A CN103413791A CN 103413791 A CN103413791 A CN 103413791A CN 2013103701507 A CN2013103701507 A CN 2013103701507A CN 201310370150 A CN201310370150 A CN 201310370150A CN 103413791 A CN103413791 A CN 103413791A
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Prior art keywords
copper
ceramic
film
heat sink
clad
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CN2013103701507A
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杨俊锋
庄严
庄彤
李锦添
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AURORA TECHNOLOGIES Co Ltd
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AURORA TECHNOLOGIES Co Ltd
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Abstract

The invention discloses a ceramic copper-coated film heat sink module with good heat dissipation efficiency and a manufacturing method of the ceramic copper-coated film heat sink module. The ceramic copper-coated film heat sink module comprises a ceramic substrate, a metal film and a copper film layer. The ceramic substrate is made of aluminum nitride ceramic or beryllium oxide ceramic, the metal film is attached to the upper surface of the ceramic substrate, and the copper film layer is attached to the lower surface of the ceramic substrate. The ceramic copper-coated film heat sink module is prepared through the cooperation of an ion injection and sputtering technology and a chemical plating or electroplating or electroforming process, the structure is simple, joint firmness of metal and ceramic is improved, service life is prolonged, the heat dissipation efficiency is greatly improved, and the quality of products is guaranteed.

Description

A kind of heat sink module of ceramic copper-clad film and manufacture method thereof of dispelling the heat good
Technical field
The present invention relates to a kind of heat sink module and manufacture method thereof, especially relate to a kind of heat sink module of ceramic copper-clad film and manufacture method thereof of dispelling the heat good. Background technology
In order to improve the efficiency of electronic equipment, require increasing electronic component must bear large power when normal operation.High brightness LED (High Brightness LED) for example, in the electronic equipments such as concentrating solar battery, electronic component will bear enough large power.Because powerful electronic component can produce a large amount of heat energy usually when working; if the heat energy produced can't in time be got rid of; the temperature of electronic component and whole electronic equipment will constantly raise, thereby cause the hydraulic performance decline of electronic component and whole electronic equipment even finally to burn.Therefore, the large power, electrically sub-element need to be arranged in pairs or groups heat sink module (heat sink) with quick heat radiating.In order to improve the efficiency of electronic component thermotropism sinker heat radiation, require the heat sink good heat dispersion that has itself, publication number is the patent of invention of CN 101908490 A, discloses a kind of circuit substrate module and manufacture method thereof with radiator.The disclosed manufacture method of this patent is Direct Bonding (the Direct Bonding Copper of ceramic substrate and copper platinum, be called for short DBC) technology, namely lower than metallic copper fusing point (approximately 1083 ℃) and higher than the temperature range of copper and cupric oxide eutectic temperature (1063 ℃), heat-treating, ceramic substrate and the copper platinum method by sintering is being bonded together.
There are following two fatal defects in the method for Direct Bonding (DBC):
First: the method sintering range of Direct Bonding is narrow, and the technological temperature scope of permission is between 1063 ℃ to 1083 ℃.The process window of sintering only has 20 ℃, and actual production is controlled very difficult.
Second: the method copper platinum of Direct Bonding is generally thicker, and minimum thickness is not less than 100 μ m, otherwise can't form more firmly and engage between copper platinum and pottery.Obviously, blocked up copper layer can't be realized meticulous circuitous pattern processing.
Summary of the invention
The object of the present invention is to provide a kind of not only simple in structurely, and can improve metal and the ceramic firmness that engages, increase the service life, heat radiation usefulness significantly, guarantee the good heat sink module of ceramic copper-clad film and the manufacture method thereof of heat radiation of product quality.
To achieve these goals, the present invention adopts following technical scheme:
A kind of heat sink module of ceramic copper-clad film of dispelling the heat good, comprise ceramic substrate, metal film and copper film layer, and described ceramic substrate is made by aluminium nitride or beryllium oxide ceramics, and its upper surface adheres to layer of metal film, and its lower surface adheres to the layer of copper rete.
Further, described metal film is mixed by titanium, copper mixing or titanium, tungsten, copper or copper becomes, and is patterned.
Further, described metal film adopts sputtering technology to engage with described ceramic substrate.
Further, described copper film layer thickness is between 0.1-1000 μ m.
Further, described copper film layer adopts ion implantation technique to engage with described ceramic substrate.
A kind of manufacture method of the heat sink module of ceramic copper-clad film of dispelling the heat good, comprise the steps:
Step 1: by the method for Implantation, form the layer of copper rete at the lower surface of ceramic substrate;
Step 2: by the method for sputter, form titanium, copper mixing or titanium, tungsten, copper mixes or the copper metal film at the upper surface of ceramic substrate;
Step 3: the metal film of formation is undertaken graphically, forming graphical metal film by the method for even glue, exposure, development;
Step 4: the copper film layer of formation and metal film are thickeied to needed thickness by electroless copper, electro-coppering or copper electroforming technology, form the thickening ceramic copper-clad base plate;
Step 5: the metal film of the thickening ceramic copper-clad base plate of formation is carried out to etching, obtain the thickening ceramic copper-clad base plate with circuitous pattern;
Step 6: the thickening ceramic copper-clad base plate that will obtain carries out cutting-up by the figure or the design size that form, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 7: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and finally obtains the heat sink module of ceramic copper-clad film of finished product.
Further, a kind of manufacture method of the heat sink module of ceramic copper-clad film of dispelling the heat good, comprise the steps:
Step 1: by the method for Implantation, form the layer of copper rete at the lower surface of ceramic substrate;
Step 2: by the method for sputter, form titanium, copper mixing or titanium, tungsten, copper mixes or the copper metal film at the upper surface of ceramic substrate;
Step 3: the copper film layer of formation and metal film are thickeied to needed thickness by electroless copper, electro-coppering or copper electroforming technology, form the thickening ceramic copper-clad base plate;
Step 4: the thickening ceramic copper-clad base plate that will obtain carries out cutting-up by the figure or the design size that form, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 5: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and finally obtains the heat sink module of ceramic copper-clad film of finished product.
Compared with prior art, coupled ion injection of the present invention, sputter and chemical plating or plating or electroforming process prepare the heat sink module of ceramic copper-clad film, not only simple in structure, and metal and the ceramic firmness that engages have been improved, extended useful life, significantly promote heat dissipation, guaranteed product quality.
The accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is that metal film of the present invention has patterned structural representation.
Embodiment
The present invention is described in detail to the present invention below in conjunction with the drawings and specific embodiments.
Refer to Fig. 1 and Fig. 2, a kind of heat sink module of ceramic copper-clad film of dispelling the heat good, comprise ceramic substrate 1, metal film 2 and copper film layer 3, described ceramic substrate 1 can be made by aluminium nitride or beryllium oxide ceramics, in ceramic material commonly used, the thermal conductivity of aluminium nitride is more than or equal to 170W/mK, the thermal conductivity of beryllium oxide is more than or equal to 270W/mK, aluminium nitride ceramics and beryllium oxide ceramics are the best bi-materials of heat conductivility in current all ceramic materials commonly used, therefore, the present invention selects aluminium nitride ceramics or beryllium oxide ceramics as ceramic substrate 1, the described ceramic substrate 1 of the present embodiment is preferably beryllium oxide ceramics substrate 1.
Described ceramic substrate 1 upper surface adheres to layer of metal film 2, and described metal film 2 can be mixed or copper becomes by titanium, copper mixing or titanium, tungsten, copper, can be patterned, and can be have patternedly yet, and the described metal film 2 of the present embodiment is preferably copper metal film 2.
Described ceramic substrate 1 lower surface adheres to layer of copper rete 3, and described copper film layer 3 its thickness are between 0.1-1000 μ m.
Far away higher than pottery, so metal all exists thermal resistance with the interface that pottery contacts due to the thermal conductivity of metal.Thermal resistance is less, and radiating effect is better.Combination between metal and pottery is more firm, and the thermal resistance between metal and pottery is less.And powerful electronic component is general under hot environment, works for a long time, thereby can cause aging between metal and pottery, and then cause the firmness of risking one's life between metal and pottery to descend, thus cause thermal resistance to rise, even affect the life and reliability of electronic equipment.Therefore, copper film layer 3 of the present invention adopts ion implantation technique to engage with described ceramic substrate 1 lower surface, described metal film 2 engages with described ceramic substrate 1 upper surface employing sputtering technology, has guaranteed firmly engaging between metal and pottery.
Described ion implantation technique is the technology that a kind of high energy particle enters into solid-state block materials.By energy, be 10KeV to the copper ion implantation of 40KeV to ceramic substrate 1, after copper ion implantation ceramic substrate 1, not only can form at ceramic surface the copper film layer 3 of one deck even compact, and copper ion about 5 to 10 nanometers of the degree of depth that enter into ceramic substrate 1, improved greatly the firmness that engages between copper film layer 3 and ceramic substrate 1.On copper film layer 3 surfaces that Implantation forms, carry out electroless copper or electro-coppering or copper electroforming, the present embodiment is preferably the electroless copper technology again, can obtain thickness controlled, engage firmly copper film layer 3.
Described sputtering technology is a kind of film deposition techniques of maturation.Method deposition on ceramic substrate 1 surface by sputter forms titanium, copper mixing or titanium, tungsten, copper mixing or copper metal film 2, then by the method for chemical plating or plating or electroforming, the present embodiment is preferably electroless copper, the copper layer is controlled in suitable thickness range, can obtains and engage firm, the controlled copper metal film 2 of even thickness.
When described copper metal film 2 need to carry out when graphical, a kind of manufacture method of the heat sink module of ceramic copper-clad film of dispelling the heat good, comprise the steps:
Step 1: by the method for Implantation, form layer of copper rete 3 at the lower surface of ceramic substrate 1;
Step 2: by the method for sputter, form copper metal film 2 at the upper surface of ceramic substrate 1;
Step 3: the copper metal film 2 of formation is undertaken graphically, forming graphical copper metal film 2 by the method for even glue, exposure, development;
Step 4: the copper film layer of formation 3 and graphical copper metal film 2 are thickeied to needed thickness by the electroless copper technology, form the thickening ceramic copper-clad base plate;
Step 5: the copper metal film of the thickening ceramic copper-clad base plate of formation 2 is carried out to etching, obtain the thickening ceramic copper-clad base plate with circuitous pattern;
Step 6: the thickening ceramic copper-clad base plate that circuitous pattern is arranged that will obtain carries out cutting-up by the figure or the design size that form, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 7: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and obtains the heat sink module of ceramic copper-clad film of final finished.
Without carrying out when graphical, a kind of manufacture method of the heat sink module of ceramic copper-clad film of dispelling the heat good, comprise the steps: when described copper metal film 2
Step 1: by the method for Implantation, form layer of copper rete 3 at the lower surface of ceramic substrate 1;
Step 2: by the method for sputter, form copper metal film 2 at the upper surface of ceramic substrate 1;
Step 3: the copper film layer of formation 3 and copper metal film 2 are thickeied to needed thickness by the electroless copper technology, form the thickening ceramic copper-clad base plate;
Step 4: the thickening ceramic copper-clad base plate that will obtain carries out cutting-up by design size, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 5: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and finally obtains the heat sink module of ceramic copper-clad film of finished product.
Coupled ion injection of the present invention, sputtering technology and chemical plating or plating or electroforming process prepare the heat sink module of ceramic copper-clad film, not only simple in structure, and improved metal and the ceramic firmness that engages, extended useful life, significantly promote heat dissipation, guaranteed product quality.
Above invention has been described in conjunction with most preferred embodiment, but the present invention is not limited to the embodiment of above announcement, and should contain various modification, equivalent combinations of carrying out according to essence of the present invention.

Claims (7)

1. good heat sink module of ceramic copper-clad film of heat radiation, it is characterized in that: comprise ceramic substrate, metal film and copper film layer, described ceramic substrate is made by aluminium nitride or beryllium oxide ceramics, and its upper surface adheres to layer of metal film, and its lower surface adheres to the layer of copper rete.
2. a kind of heat sink module of ceramic copper-clad film of dispelling the heat good as claimed in claim 1 is characterized in that: described metal film is mixed by titanium, copper mixing or titanium, tungsten, copper or copper becomes, and is patterned.
3. a kind of heat sink module of ceramic copper-clad film of dispelling the heat good as claimed in claim 1, is characterized in that described metal film and described ceramic substrate adopt sputtering technology to engage.
4. a kind of heat sink module of ceramic copper-clad film of dispelling the heat good as claimed in claim 1, it is characterized in that: described copper film layer thickness is between 0.1-1000 μ m.
5. a kind of heat sink module of ceramic copper-clad film of dispelling the heat good as claimed in claim 1 is characterized in that: described copper film layer adopts ion implantation technique to engage with described ceramic substrate.
6. a method of manufacturing the good heat sink module of ceramic copper-clad film of the described heat radiation of claim 1, is characterized in that: comprise the steps:
Step 1: by the method for Implantation, form the layer of copper rete at the lower surface of ceramic substrate;
Step 2: by the method for sputter, form titanium, copper mixing or titanium, tungsten, copper mixes or the copper metal film at the upper surface of ceramic substrate;
Step 3: the metal film of formation is undertaken graphically, forming graphical metal film by the method for even glue, exposure, development;
Step 4: the copper film layer of formation and metal film are thickeied to needed thickness by electroless copper, electro-coppering or copper electroforming technology, form the thickening ceramic copper-clad base plate;
Step 5: the metal film of the thickening ceramic copper-clad base plate of formation is carried out to etching, obtain the thickening ceramic copper-clad base plate with circuitous pattern;
Step 6: the thickening ceramic copper-clad base plate that will obtain carries out cutting-up by the figure or the design size that form, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 7: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and finally obtains the heat sink module of ceramic copper-clad film of finished product.
7. a method of manufacturing the good heat sink module of ceramic copper-clad film of the described heat radiation of claim 1, is characterized in that: comprise the steps:
Step 1: by the method for Implantation, form the layer of copper rete at the lower surface of ceramic substrate;
Step 2: by the method for sputter, form titanium, copper mixing or titanium, tungsten, copper mixes or the copper metal film at the upper surface of ceramic substrate;
Step 3: the copper film layer of formation and metal film are thickeied to needed thickness by electroless copper, electro-coppering or copper electroforming technology, form the thickening ceramic copper-clad base plate;
Step 4: the thickening ceramic copper-clad base plate that will obtain carries out cutting-up by the figure or the design size that form, obtains the heat sink module of a plurality of ceramic copper-clad films;
Step 5: the heat sink module of ceramic copper-clad film that will obtain is cleaned with acetone, dries, and finally obtains the heat sink module of ceramic copper-clad film of finished product.
CN2013103701507A 2013-08-22 2013-08-22 Ceramic copper-coated film heat sink module with good heat dissipation efficiency and manufacturing method thereof Pending CN103413791A (en)

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Cited By (8)

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CN105198491A (en) * 2015-09-14 2015-12-30 武汉利之达科技有限公司 Method for preparing ceramic substrate containing conductive copper cylinder
CN105789427A (en) * 2016-03-15 2016-07-20 深圳前海华兆新能源有限公司 Thermoelectric power generation device and preparation method thereof
WO2018121219A1 (en) * 2016-12-29 2018-07-05 比亚迪股份有限公司 Heat dissipation substrate, preparation method and application thereof, and electronic component
CN108493320A (en) * 2018-05-10 2018-09-04 北京大学东莞光电研究院 Nano combined buffering coating MCOB encapsulation aluminium nitride substrate and preparation method thereof
CN112151480A (en) * 2019-06-28 2020-12-29 比亚迪股份有限公司 Copper heat dissipation bottom plate, preparation method thereof and IGBT module
CN113174575A (en) * 2021-03-31 2021-07-27 西安交通大学 Method for preparing AlN ceramic substrate by metallization and heat sink integration
CN115799974A (en) * 2023-02-07 2023-03-14 度亘激光技术(苏州)有限公司 Heat conduction structure, preparation method thereof and indirect heat conduction structure
CN115939928A (en) * 2023-03-10 2023-04-07 四川富乐华半导体科技有限公司 Heat sink structure of semiconductor laser and preparation method thereof

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN112151480A (en) * 2019-06-28 2020-12-29 比亚迪股份有限公司 Copper heat dissipation bottom plate, preparation method thereof and IGBT module
CN113174575A (en) * 2021-03-31 2021-07-27 西安交通大学 Method for preparing AlN ceramic substrate by metallization and heat sink integration
CN115799974A (en) * 2023-02-07 2023-03-14 度亘激光技术(苏州)有限公司 Heat conduction structure, preparation method thereof and indirect heat conduction structure
CN115939928A (en) * 2023-03-10 2023-04-07 四川富乐华半导体科技有限公司 Heat sink structure of semiconductor laser and preparation method thereof

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Application publication date: 20131127