CN103413760A - Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble - Google Patents
Method for constructing organic micron linear array with form board assisting in volatilization induced self-assemble Download PDFInfo
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Abstract
The invention discloses a method for constructing an organic micron linear array with a form board assisting in volatilization induced self-assemble. The method comprises the following steps that (1) a substrate is washed through cleaning fluid in an ultrasonic mode, then the substrate is immersed in the piranha solution and processed by an oxygen plasma, and the surface of the substrate is made to have strong wettability; (2) the form board is constructed on the substrate; (3) the micron linear array is grown on the form board, the pre-processed form board is inserted in the organic solution for growth, and through volatilization induced self-assemble, the large-area highly-aligned organic micron linear array is obtained. The method is of great significance to manufacturing of large-area high-performance photoelectron micro-nano devices based on organic optoelectronic materials and further achieving of micro-nano device integration.
Description
Technical field
The invention belongs to field of semiconductor devices, be specifically related to from top to bottom periodically preparation, solvent evaporates self assembly from bottom to top, dewetting, the fingering convection current of infiltration/dewetting template.
Background technology
At present, in the semiconductor device industrial production, top-down technique commonly used needs huge production line and the large-scale treatment facility under ultra-clean condition.Production and R & D Cost that this causes waste of material and has increased equipment.Realize the preparation method of the minimum consumption of material and the minimum use of the energy, the sustainable development for entire society is vital undoubtedly.There are many seminars to attempt using template Aided Physical gas phase transfer method to prepare the organic micro-nano mono-crystalline structures of little molecule.But the method requires material that higher thermal stability is arranged, and universality is low, and the micro-nano structure uniformity prepared is low, unsuitable large tracts of land preparation.If want, bringing into play the advantage cheap and easy to get of the organic micro wire of little molecule and realize large-scale application, is first-selected based on the self-assembling method of solution.At present, many self-assembling methods based on solution, such as evaporation induced self-assembly (Evaporation induced self-assemble), LB technology (Langmuir – Blodgett (LB) technique), inkjet printing (Inject printing), dip-coating (Dip coating), drip and be coated with (Drop-casting), microfluidic is assisted (Microfluidic assisted nanowire alignment), and bubbling method (Bubble blown method) is developed.In general, directly use organic micro wire of solwution method self assembly acquisition with at random being distributed in substrate of the unordered mode of microcosmic.This can significantly increase material consumption undoubtedly and have a strong impact on the device electric property.Therefore, a kind ofly based on solwution method, can effectively prepare patterned distribution and the method for organic micro wire of highly aliging is badly in need of.
Summary of the invention
For overcoming the deficiency in existing volatilization self-assembling technique, the method that the object of the present invention is to provide the auxiliary evaporation induced self-assembly of a kind of template to construct organic micro wire array, the method possesses simple to operate, the scope of application is wide, universality is strong, obtain the alignment of organic micro wire array height, position is accurately controlled.
Technical scheme of the present invention is as follows:
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire array comprises the following steps:
1) cleaning of substrate: substrate cleaning fluid ultrasonic cleaning, then immerse piranha solution, and use oxygen plasma treatment, make substrate surface have strong wettability;
2) in substrate, construct template;
3) growth of micro wire array on template: template that preliminary treatment is good is inserted organic growth from solution, by evaporation induced self-assembly, thereby obtains large tracts of land, organic micro wire array that aligns highly.
As preferred version, the substrate in above-mentioned steps (1) is a kind of in titanium dioxide silicon chip, silicon chip, sheet glass, nitrogenize silicon chip.
In above-mentioned steps (2), template adopts the self assembled monolayer template of constructing the infiltration/dewetting of periodically arranging, and comprises the following steps:
3a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then with developing liquid developing, obtain the substrate sheet with periodic pattern;
3b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour;
3c) remove photoresist: use the liquid that removes photoresist for negative photoresist to remove remaining glue, obtain the self assembled monolayer template of the infiltration/dewetting of periodically arranging.
Template adopts and constructs the photoresist of periodically arranging and the self assembled monolayer template of dewetting in above-mentioned steps (2), comprises the following steps:
4a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
4b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour, obtain the self assembled monolayer template of the negative photoresist/dewetting of periodically arranging.
In above-mentioned steps (2), template adopts and constructs silicon dioxide and the photoresist template that can infiltrate, and comprises the following steps:
5a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the spin coating of substrate surface sheet, under the help of mask plate, utilize mask aligner to carve needed figure, then with the oxidized silicon chip obtained after developing liquid developing with periodic pattern, obtain the silicon dioxide that can infiltrate and photoresist template.
In above-mentioned steps (2), template adopts and constructs raster-like groove template, comprises the following steps:
6a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the spin coating of substrate surface sheet, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
6b) RIE-reactive ion etching: the substrate sheet RIE-reactive ion etching that photoetching is good obtains the periodically template of groove;
6c) remove photoresist: use the liquid that removes photoresist for positive photoresist to remove remaining glue, obtain raster-like groove template.
As preferred version, the cleaning fluid in above-mentioned steps (1) is that agent is respectively acetone, ethanol, water.
As preferred version, the modification solution ratio in above-mentioned steps (3b), (4b) is octadecyl trichlorosilane alkane: toluene=1:100, modifies to operate in glove box and carries out, and soak time is 20 minutes, uses the acetone ultrasonic cleaning.
As preferred version, the negative photoresist described in above-mentioned steps (3a), (4a) is SU-8.
As preferred version, the positive photoresist described in above-mentioned steps (5a), (6a) is AR-5350.
As preferred version, in above-mentioned steps (3c), remaining glue will soak after 24 hours clean with acetone rinsing after powerful ultrasonic 10 minutes in 60 ℃ of liquid that remove photoresist.
As preferred version, the organic substance in above-mentioned steps (3) can be most of solubility organic molecules such as square acid, fullerene, perylene diimides class, but is not limited to this.
The invention solves defect of the prior art, reached following beneficial effect:
1) volatilization process is simple to operate.Without main equipment instrument and ultra-clean condition;
2) volatilization method almost is applicable to the organic molecule of most solubility;
3) operating process is at room temperature carried out, without high-temperature process.For follow-up possible and flexible substrates in conjunction with providing convenience;
4) the organic micro wire prepared evenly, overlength, continuously, large tracts of land, for follow-up possible device large-scale integrated is provided convenience;
5) the organic micro wire prepared is periodically good, highly align, controlled, the accurate location of spacing, significantly reduces material consumption, eliminates or reduce the parasitic current path of device, significantly reduces " OFF " electric current of device;
6) the organic micro wire prepared is monocrystalline, and with respect to the sample of amorphous or polycrystalline, performance is higher;
7) because operating process of the present invention is simple, favorable repeatability, the course of reaction gentleness, have universality, therefore has the value promoted the use.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and coordinate accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
The accompanying drawing explanation
Fig. 1 is scanning electron microscopy (SEM) picture (removing glue) of organic micro wire array of preparing of the embodiment of the present invention 1;
Fig. 2 is scanning electron microscopy (SEM) picture (removing glue) of the different spacing of organic micro wire array of preparing of the embodiment of the present invention 1;
Fig. 3 is scanning electron microscopy (SEM) photo (not removing photoresist) of organic micro wire array of preparing of example 2 of the present invention;
Fig. 4 is scanning electron microscopy (SEM) picture (not removing photoresist) of the different spacing of organic micro wire array of preparing of example 2 of the present invention.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire array comprises the following steps:
1) cleaning of substrate: substrate cleaning fluid ultrasonic cleaning, then immerse piranha solution, and use oxygen plasma treatment, make substrate surface have strong wettability;
2) in substrate, construct template;
3) growth of micro wire array on template: template that preliminary treatment is good is inserted organic growth from solution, by evaporation induced self-assembly, thereby obtains large tracts of land, organic micro wire array that aligns highly.
As preferred version, the substrate in above-mentioned steps (1) is a kind of in titanium dioxide silicon chip, silicon chip, sheet glass, nitrogenize silicon chip.
In above-mentioned steps (2), template adopts the self assembled monolayer template of constructing the infiltration/dewetting of periodically arranging, and comprises the following steps:
3a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then with developing liquid developing, obtain the substrate sheet with periodic pattern;
3b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour;
3c) remove photoresist: use the liquid that removes photoresist for negative photoresist to remove remaining glue, obtain the self assembled monolayer template of the infiltration/dewetting of periodically arranging.
Template adopts and constructs the photoresist of periodically arranging and the self assembled monolayer template of dewetting in above-mentioned steps (2), comprises the following steps:
4a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
4b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour, obtain the self assembled monolayer template of the negative photoresist/dewetting of periodically arranging.
In above-mentioned steps (2), template adopts and constructs silicon dioxide and the photoresist template that can infiltrate, and comprises the following steps:
5a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the spin coating of substrate surface sheet, under the help of mask plate, utilize mask aligner to carve needed figure, then with the oxidized silicon chip obtained after developing liquid developing with periodic pattern, obtain the silicon dioxide that can infiltrate and photoresist template.
In above-mentioned steps (2), template adopts and constructs raster-like groove template, comprises the following steps:
6a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the spin coating of substrate surface sheet, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
6b) RIE-reactive ion etching: the substrate sheet RIE-reactive ion etching that photoetching is good obtains the periodically template of groove;
6c) remove photoresist: use the liquid that removes photoresist for positive photoresist to remove remaining glue, obtain raster-like groove template.
As preferred version, the cleaning fluid in above-mentioned steps (1) is that agent is respectively acetone, ethanol, water.
As preferred version, the modification solution ratio in above-mentioned steps (3b), (4b) is octadecyl trichlorosilane alkane: toluene=1:100, modifies to operate in glove box and carries out, and soak time is 20 minutes, uses the acetone ultrasonic cleaning.
As preferred version, the negative photoresist described in above-mentioned steps (3a), (4a) is SU-8.
As preferred version, the positive photoresist described in above-mentioned steps (5a), (6a) is AR-5350.
As preferred version, in above-mentioned steps (3c), (6c), remaining glue will soak after 24 hours clean with acetone rinsing after powerful ultrasonic 10 minutes in 60 ℃ of liquid that remove photoresist.
As preferred version, the organic substance in above-mentioned steps (3) can be most of solubility organic molecules such as square acid, fullerene, perylene diimides class, but is not limited to this.
Embodiment 1
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire array comprises the following steps:
1) cleaning of silicon chip: get a slice SiO
2/ Si sheet, wherein SiO
2The thickness of layer is 300nm, use successively acetone, ethanol, water, each ultrasonic cleaning 10min, after each ultrasonic, all use a large amount of ultra-pure waters to rinse, immerse again piranha solution, and, by oxygen plasma treatment 10 minutes, finally with a large amount of ultra-pure waters, rinse and dry up with nitrogen, wherein piranha solution is the strong oxidizing property solution of the concentrated sulfuric acid: hydrogen peroxide=3:1, and it can be by SiO
2The oxidation operation on surface falls and rolls up SiO
2The hydroxy number on surface, increase its wettability.
2) photoetching: the SiO that will clean
2Certain thickness negative photoresist SU-8 in the spin coating of/Si sheet.Actual conditions: the sol evenning machine parameter is first 600r 9s 5500r 20s, and drying glue temperature and time in front and back is 95 ℃ of 1.5min respectively, and developing time is 17s.Under the help of mask plate, utilize mask aligner to carve needed figure.The complete oxidized silicon chip of photoetching is with the figure obtained after developing liquid developing after photoetching.
3) octadecyl trichlorosilane alkane (OTS) is modified: by the SiO after photoetching
2/ Si sheet immerses modification solution uses the acetone ultrasonic cleaning after 20 minutes, wherein decorating liquid is that proportioning is octadecyl trichlorosilane alkane (OTS): toluene=1:100, modifies action need and carries out in glove box.
4) remove photoresist: use the liquid that removes photoresist for negative photoresist to remove remaining glue, remaining glue will soak after 24 hours clean with acetone rinsing after powerful ultrasonic 10 minutes in 60 ℃ of liquid that remove photoresist.Obtain the self assembled monolayer template of the infiltration/dewetting of periodically arranging.
5) volatilization growth: the template that preliminary treatment is good is vertically in the dichloromethane solution of the side's of being inserted into acid (MeSq), and concentration is 0.03mM.The temperature of volatilization growth is 10 ℃.Keep ambient humidity lower than 40%.Volatilization process carries out in fume hood.After having volatilized, the organic micro wire pattern that obtain large tracts of land, highly aligns.Micro wire optionally is grown in the wettability raceway groove of former photoresist protection, and width is about 3-4 μ m, and spacing depends on the spacing of photoetching wettability raceway groove.
Embodiment 2
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire pattern comprises the following steps:
1) cleaning of silicon chip: get a slice SiO
2/ Si sheet, wherein SiO
2The thickness of layer is 300nm, use successively acetone, ethanol, water, each ultrasonic cleaning 10min, after each ultrasonic, all use a large amount of ultra-pure waters to rinse, immerse again piranha solution, and, by oxygen plasma treatment 10 minutes, finally with a large amount of ultra-pure waters, rinse and dry up with nitrogen, wherein piranha solution is the strong oxidizing property solution of the concentrated sulfuric acid: hydrogen peroxide=3:1, and it can be by SiO
2The oxidation operation on surface falls and rolls up SiO
2The hydroxy number on surface, increase its wettability.
2) photoetching: the SiO that will clean
2Certain thickness negative photoresist SU-8 in the spin coating of/Si sheet.Actual conditions: the sol evenning machine parameter is first 600r 9s 5500r 20s, and drying glue temperature and time in front and back is 95 ℃ of 1.5min respectively, and developing time is 17s.Under the help of mask plate, utilize mask aligner to carve needed figure.The complete oxidized silicon chip of photoetching is with the figure obtained after developing liquid developing after photoetching.
3) octadecyl trichlorosilane alkane (OTS) is modified: by the SiO after photoetching
2/ Si sheet immerses modification solution uses the acetone ultrasonic cleaning after 20 minutes, wherein decorating liquid is that proportioning is octadecyl trichlorosilane alkane (OTS): toluene=1:100, modifies action need and carries out in glove box.Obtain the template of negative photoresist/dewetting self-assembled monolayer.
4) volatilization growth: the template that preliminary treatment is good is vertically in the dichloromethane solution of the side's of being inserted into acid (MeSq), and concentration is 0.03mM.The temperature of volatilization growth is 10 ℃.Keep ambient humidity lower than 40%.Volatilization process carries out in fume hood.After having volatilized, the organic micro wire pattern that obtain large tracts of land, highly aligns.The micro wire selective growth, on the both sides of photoresist, forms " sandwich " structure, and both sides micro wire width all is about 2 μ m, and spacing depends on the spacing of photoresist.
Embodiment 3
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire pattern comprises the following steps:
1) cleaning of silicon chip: get a slice SiO
2/ Si sheet, wherein SiO
2The thickness of layer is 300nm, use successively acetone, ethanol, water, each ultrasonic cleaning 10min, after each ultrasonic, all use a large amount of ultra-pure waters to rinse, immerse again piranha solution, and, by oxygen plasma treatment 10 minutes, finally with a large amount of ultra-pure waters, rinse and dry up with nitrogen, wherein piranha solution is the strong oxidizing property solution of the concentrated sulfuric acid: hydrogen peroxide=3:1, and it can be by SiO
2The oxidation operation on surface falls and rolls up SiO
2The hydroxy number on surface, increase its wettability.
2) photoetching: the SiO that will clean
2Certain thickness positive photoresist AR-5350 in the spin coating of/Si sheet.Actual conditions: the sol evenning machine parameter is first 600r 9s, 3500r 30s, and drying glue temperature and time in front and back is 100 ℃ respectively, 3min, developing time are 14s.Under the help of mask plate, utilize mask aligner to carve needed figure.The complete oxidized silicon chip of photoetching is with the figure obtained after developing liquid developing after photoetching.Obtain the silicon dioxide that can infiltrate and the template of photoresist.
3) volatilization growth: the template that preliminary treatment is good vertically is inserted into fullerene (C
60) meta-xylene solution in, concentration is 0.2mg/ml.The temperature of volatilization growth is 26 ℃.Keep ambient humidity lower than 40%.Volatilization process carries out in fume hood.After having volatilized, the organic micro wire pattern of little molecule that obtain large tracts of land, highly aligns.Micro wire optionally is grown in the silicon dioxide raceway groove that can infiltrate, and the photoresist zone is not being arranged.
Embodiment 4
The method that the auxiliary evaporation induced self-assembly of a kind of template is constructed organic micro wire pattern, it comprises the following steps:
1) cleaning of silicon chip: get a slice SiO
2/ Si sheet, wherein SiO
2The thickness of layer is 300nm, use successively acetone, ethanol, water, each ultrasonic cleaning 10min, after each ultrasonic, all use a large amount of ultra-pure waters to rinse, immerse again piranha solution, and, by oxygen plasma treatment 10 minutes, finally with a large amount of ultra-pure waters, rinse and dry up with nitrogen, wherein piranha solution is the strong oxidizing property solution of the concentrated sulfuric acid: hydrogen peroxide=3:1, and it can be by SiO
2The oxidation operation on surface falls and rolls up SiO
2The hydroxy number on surface, increase its wettability.
2) photoetching: the SiO that will clean
2Certain thickness positive photoresist AR-5350 in the spin coating of/Si sheet.Actual conditions: the sol evenning machine parameter is first 600r 9s, 3500r 30s, and drying glue temperature and time in front and back is 100 ℃ respectively, 3min, developing time are 14s.Under the help of mask plate, utilize mask aligner to carve needed figure.The complete oxidized silicon chip of photoetching is with the figure obtained after developing liquid developing after photoetching.
3) RIE-reactive ion etching: the silicon chip that photoetching is good is used RIE-reactive ion etching 10 minutes.
4) remove photoresist: use the liquid that removes photoresist for positive photoresist to remove remaining glue, remaining glue will soak after 24 hours clean with acetone rinsing after powerful ultrasonic 10 minutes in 60 ℃ of liquid that remove photoresist.Obtain the template of raster-like groove.
5) volatilization growth: the template that preliminary treatment is good is vertically in the dichloromethane solution of the side's of being inserted into acid (MeSq), and concentration is 0.03mM.The temperature of volatilization growth is 10 ℃.Keep ambient humidity lower than 40%.Volatilization process carries out in fume hood.After having volatilized, the organic micro wire pattern that obtain large tracts of land, highly aligns.Micro wire optionally is grown in the raster-like recess channel.
In above 4 embodiment, the self assembling process from bottom to top that volatilization is induced mainly occurs near solution-air-substrate three-phase line of contact.In the incipient stage, three-phase line of contact is continuous, and direction is perpendicular to the dewetting direction.Because near solvent evaporates speed three-phase line of contact is the fastest, solute concentration increases, and at first has nucleus to separate out after reaching critical concentration, and contact wire is by partial fixing.Along with moving down of solution contact wire, contact wire, due to by partial fixing, has formed the brook of periodic distribution.SiO in homogeneity
2The spacing in brook ,/Si sheet surface depends on solvent viscosity and surface tension.And the SiO of the periodicity infiltration/dewetting of modifying at patterning
2/ Si sheet surface, the brook selective distribution is in the wettability zone.The solute concentration increase of brook end is the fastest, and the solvent from main body toward the contact wire direction, along the brook Radial Flow to contact wire, to supplement this solvent loss, forms the fingering convection current.The fingering convection current is transported to the brook end endlessly by solute, and nucleus retreats with the brook end and constantly growth.
The present invention realizes within the specific limits that by controlling solution concentration and evaporation rate the micro wire thickness is tuning.By the position of controlling the wettability raceway groove, realize that micro wire accurately locates.By the spacing of controlling the wettability raceway groove, realize that the micro wire spacing is tuning.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (12)
1. the method that the auxiliary evaporation induced self-assembly of template is constructed organic micro wire array, is characterized in that, comprises the following steps:
1) cleaning of substrate: substrate cleaning fluid ultrasonic cleaning, then immerse piranha solution, and use oxygen plasma treatment, make substrate surface have strong wettability;
2) in substrate, construct template;
3) growth of micro wire array on template: template that preliminary treatment is good is inserted the organic substance growth from solution, by evaporation induced self-assembly, obtains large tracts of land, organic micro wire array that aligns highly.
2. the auxiliary evaporation induced self-assembly of the template according to claim 1 method of constructing organic micro wire array, is characterized in that, the substrate in described step (1) is a kind of in titanium dioxide silicon chip, silicon chip, sheet glass, nitrogenize silicon chip.
3. template according to claim 1 is assisted the method that evaporation induced self-assembly is constructed organic micro wire array, it is characterized in that, in described step (2), template adopts the self assembled monolayer template of the infiltration/dewetting of periodically arranging, and comprises the following steps:
3a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then with developing liquid developing, obtain the substrate sheet with periodic pattern;
3b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour;
3c) remove photoresist: use the liquid that removes photoresist for negative photoresist to remove remaining glue, obtain the self assembled monolayer template of the infiltration/dewetting of periodically arranging.
4. template according to claim 1 is assisted the method that evaporation induced self-assembly is constructed organic micro wire array, it is characterized in that, the photoresist that in described step (2), the template employing is periodically arranged and the self assembled monolayer template of dewetting comprise the following steps:
4a) photoetching: a period of time of drying glue at a certain temperature after certain thickness negative photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
4b) octadecyl trichlorosilane alkane is modified: by ultrasonic cleaning after the immersion of the substrate sheet after photoetching octadecyl trichlorosilane alkane modification solution certain hour, obtain the self assembled monolayer template of the negative photoresist/dewetting of periodically arranging.
5. template according to claim 1 is assisted the method that evaporation induced self-assembly is constructed organic micro wire array, it is characterized in that, in described step (2), template adopts silicon dioxide and the photoresist template that can infiltrate, and comprises the following steps:
5a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern, obtain the silicon dioxide that can infiltrate and photoresist template.
6. template according to claim 1 is assisted the method that evaporation induced self-assembly is constructed organic micro wire array, it is characterized in that, in described step (2), template adopts raster-like groove template, comprises the following steps:
6a) photoetching: a period of time of drying glue at a certain temperature after certain thickness positive photoresist in the substrate surface spin coating, under the help of mask plate, utilize mask aligner to carve needed figure, then by the substrate sheet obtained after developing liquid developing with periodic pattern;
6b) RIE-reactive ion etching: the substrate sheet RIE-reactive ion etching that photoetching is good obtains the periodically template of groove;
6c) remove photoresist: use the liquid that removes photoresist for positive photoresist to remove remaining glue, obtain raster-like groove template.
7. template according to claim 1 is assisted the method that evaporation induced self-assembly is constructed organic micro wire array, it is characterized in that, the cleaning fluid in described step (1) is that agent is respectively acetone, ethanol, water.
8. the method for constructing organic micro wire array according to claim 3, the auxiliary evaporation induced self-assembly of the described template of 4 arbitrary claim, it is characterized in that, modification solution ratio in described step (3b), (4b) is octadecyl trichlorosilane alkane: toluene=1:100, modification operates in glove box to be carried out, soak time is 20 minutes, uses the acetone ultrasonic cleaning.
9. the method for constructing organic micro wire array according to claim 3, the auxiliary evaporation induced self-assembly of the described template of 4 arbitrary claim is characterized in that the negative photoresist described in described step (3a), (4a) is SU-8.
10. the method for constructing organic micro wire array according to claim 5, the auxiliary evaporation induced self-assembly of the described template of 6 arbitrary claim is characterized in that the positive photoresist described in described step (5a), (6a) is AR-5350.
11. the method that the auxiliary evaporation induced self-assembly of template according to claim 3 is constructed organic micro wire array, it is characterized in that, in described step (3c), remaining glue will soak after 24 hours clean with acetone rinsing after powerful ultrasonic 10 minutes in 60 ℃ of liquid that remove photoresist.
12. the method that the auxiliary evaporation induced self-assembly of template according to claim 1 is constructed organic micro wire array, is characterized in that the solubility organic molecule of the organic substance side of the being acid in described step (3), fullerene, perylene diimides class.
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| CN109231151A (en) * | 2018-09-26 | 2019-01-18 | 天津大学 | A kind of device and application for making self-assembly structure |
| WO2019080467A1 (en) * | 2017-10-23 | 2019-05-02 | 北京赛特超润界面科技有限公司 | Preparation method for organic small molecular crystal patterned array |
| CN109841737A (en) * | 2019-02-27 | 2019-06-04 | 苏州大学 | A kind of preparation method of organic semiconductor array crystals |
| CN111697134A (en) * | 2020-05-25 | 2020-09-22 | 苏州大学 | Preparation method of fullerene single crystal nanowire array and organic field effect transistor |
| CN113073391A (en) * | 2021-03-26 | 2021-07-06 | 中山大学·深圳 | Preparation method of organic semiconductor single crystal array |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130040070A1 (en) * | 2011-08-08 | 2013-02-14 | Gwangju Institute Of Science And Technology | Method for forming microstructure pattern based on solution process |
-
2013
- 2013-08-28 CN CN201310381889.8A patent/CN103413760B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130040070A1 (en) * | 2011-08-08 | 2013-02-14 | Gwangju Institute Of Science And Technology | Method for forming microstructure pattern based on solution process |
Non-Patent Citations (2)
| Title |
|---|
| RONG-RONG BAO,CHENG-YI ZHANG,ET AL.: "Self-Assembly and Hierarchical Patterning of Aligned Organic Nanowire Arrays by Solvent Evaporation on Substrates with Patterned Wettability", 《ACS APPLIED MATERIALS & INTERFACES》, vol. 5, no. 12, 27 May 2013 (2013-05-27), pages 5758 * |
| YUPING ZHANG, XUDI WANG, ET AL: "Aligned ultralong nanowire arrays and their application in flexible photodetector devices", 《JOURNAL OF MATERIALS CHEMISTRY》, vol. 22, no. 29, 24 May 2012 (2012-05-24) * |
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| CN105470390A (en) * | 2015-11-23 | 2016-04-06 | 苏州大学 | Method for constructing large-area, flexible, wearable organic nano-wire field-effect transistor array by using adhesive tape as substrate |
| CN105470390B (en) * | 2015-11-23 | 2017-12-15 | 苏州大学 | Large area, flexibility, the method for wearable organic nano field of line effect transistor arrays are built by substrate of adhesive tape |
| CN106757370A (en) * | 2016-11-30 | 2017-05-31 | 苏州大学 | A kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array |
| WO2019080467A1 (en) * | 2017-10-23 | 2019-05-02 | 北京赛特超润界面科技有限公司 | Preparation method for organic small molecular crystal patterned array |
| CN109231151A (en) * | 2018-09-26 | 2019-01-18 | 天津大学 | A kind of device and application for making self-assembly structure |
| CN109841737A (en) * | 2019-02-27 | 2019-06-04 | 苏州大学 | A kind of preparation method of organic semiconductor array crystals |
| CN109841737B (en) * | 2019-02-27 | 2022-04-22 | 苏州大学 | Preparation method of organic semiconductor array crystal |
| CN111697134A (en) * | 2020-05-25 | 2020-09-22 | 苏州大学 | Preparation method of fullerene single crystal nanowire array and organic field effect transistor |
| CN113073391A (en) * | 2021-03-26 | 2021-07-06 | 中山大学·深圳 | Preparation method of organic semiconductor single crystal array |
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