CN103400837B - 一种阵列基板及其制备方法、显示装置 - Google Patents
一种阵列基板及其制备方法、显示装置 Download PDFInfo
- Publication number
- CN103400837B CN103400837B CN201310322536.0A CN201310322536A CN103400837B CN 103400837 B CN103400837 B CN 103400837B CN 201310322536 A CN201310322536 A CN 201310322536A CN 103400837 B CN103400837 B CN 103400837B
- Authority
- CN
- China
- Prior art keywords
- array base
- base palte
- nano
- insulating barrier
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000002105 nanoparticle Substances 0.000 claims abstract description 48
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 230000000007 visual effect Effects 0.000 abstract description 12
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133504—Diffusing, scattering, diffracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明公开了一种阵列基板及其制备方法、显示装置,涉及显示领域。所述阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;所述钝化层远离所述基板一侧的反射区形成有绝缘层;所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。所述纳米粒子层的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层表面的取向均匀性,所述阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,特别适用于大尺寸户外显示的显示装置。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种阵列基板及其制备方法、显示装置。
背景技术
随着显示技术的日益发展,户外显示装置不再局限于小尺寸的手机、平板电脑以及便携式笔记本等。对于一些大尺寸的产品,例如广场电视、露天电影院以及大型广告牌等显示装置来说,对户外可视性提出了更高的要求,现有的提高户外可视性的技术为半透半反技术,也就是说对半透半反技术提出了更高的要求。
对于大尺寸半透半反技术来说,视角要求超过30°,应用于小尺寸产品的单一镜面反射模式不再适用,必须增加视角。
现有技术中公开了一种增加视角的方法,采用机械摩擦或者刻蚀工艺在反射层进行处理形成不平整表面,这种不平整表面可以作为漫反射表面使光线达到的区域范围增加,从而可以增加视角。但是因为机械摩擦或者刻蚀工艺的破坏程度较大,因此得到的反射层表面不利于液晶分子的平面取向。虽然这种方法增加了视角,但是降低了液晶分子的取向均匀性,从而降低了透过率、对比度以及暗态均匀性等性能。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是:如何提供一种阵列基板及其制备方法、显示装置,以避免降低液晶分子的取向均匀性。
(二)技术方案
为解决上述技术问题,本发明提供一种阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;
所述钝化层远离所述基板一侧的反射区形成有绝缘层;
所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。
其中,所述纳米粒子层包含:纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
其中,所述绝缘层采用树脂或者二氧化硅材料。
本发明还提供一种显示装置,包括所述的阵列基板。
本发明还提供一种阵列基板的制备方法,包括:
在基板上形成薄膜晶体管和钝化层;
在所述钝化层的反射区上形成绝缘层图案;
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶;
对所述光刻胶进行曝光处理,形成纳米粒子层。
其中,所述制备方法还包括:对形成有所述纳米粒子层的基板进行烘干处理。
其中,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶的步骤具体为:采用掩膜板遮蔽所述钝化层的透射区,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶。
其中,所述纳米粒子为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
其中,所述绝缘层采用树脂或者二氧化硅材料。
(三)有益效果
本发明实施例所述的阵列基板及其制备方法、显示装置,所述阵列基板包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;所述钝化层远离所述基板一侧的反射区形成有绝缘层;所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。。所述纳米粒子层的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层表面的取向均匀性,所述阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,特别适用于大尺寸户外显示的显示装置。
附图说明
图1是本发明实施例1所述阵列基板的结构示意图;
图2是本发明实施例3所述阵列基板的制备方法流程图;
图3a至3e是本发明实施例3所述阵列基板的制备工艺流程图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例1
图1是本发明实施例1所述阵列基板的结构示意图,如图1所示,所述阵列基板包括:基板110,形成在所述基板110一侧的薄膜晶体管(TFT,Thin Film Transistor)120和钝化层130,并且所述阵列基板划分为反射区和透射区。在所述反射区,所述钝化层130远离所述基板110一侧形成有
绝缘层140,所述绝缘层140远离所述基板110一侧形成有用于对入射光进行漫反射的纳米粒子层150。
具体地,所述绝缘层140可以采用树脂、二氧化硅等绝缘材料。通过设置所述绝缘层140,一方面可以避免所述纳米粒子层150上的静电对所述钝化层130上的电路造成破坏;另一方面,所述钝化层130的表面一般凹凸不平,不利于形成厚度均匀的所述纳米粒子层150,通过设置所述绝缘层140后,可以为形成所述纳米粒子层150提供一个较平坦的基底,利于形成厚度均匀的所述纳米粒子层150。
所述纳米粒子层150包含纳米粒子151,所述纳米粒子151可以是纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子等。
所述纳米粒子151在所述绝缘层140表面堆积成不同弧度的反射区域,使入射光能从不同的角度反射出去,因此能达到增加视角的效果。同时,所述纳米粒子151是一种能很好分散于高分子材料中的无机粒子,因此得到的所述纳米粒子层150的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层150表面的取向均匀性。因此,本发明的阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,是一种适用于大尺寸户外显示的阵列基板。
实施例2
本实施例提供一种显示装置,所述显示装置包括实施例1所述的阵列基板,所述显示装置可以是手机、平板电脑以及便携式笔记本等小尺寸的显示装置,也可以是广场电视、露天电影院以及大型广告牌等大尺寸的户外显示装置。
实施例3
图2是本发明实施例3所述阵列基板的制备方法流程图,图3a至3e是本发明实施例3所述阵列基板的制备工艺流程图。参见图2和图3a至3e,所述制备方法包括:
210:在基板110上形成薄膜晶体管120和钝化层130。
具体地,可以按照现有工艺在基板110上依次形成薄膜晶体管120和钝化层130,不再赘述,该步骤210后得到如图3a所示的结构。
220:在所述钝化层130的反射区上形成绝缘层140图案。
具体地,所述绝缘层140可以采用树脂或者二氧化硅等绝缘材料,通过设置所述绝缘层140,一方面可以避免后述纳米粒子层150上的静电对所述钝化层130上的电路造成破坏;另一方面,所述钝化层130的表面一般凹凸不平,不利于形成所述纳米粒子层150,通过设置所述绝缘层140后,可以为形成所述纳米粒子层150提供一个较平坦的基底。经过该步骤220后形成图3b所示的结构。
230:在所述绝缘层140上涂覆掺杂有纳米粒子151的光刻胶310。
具体地,该步骤可以包括:采用掩膜板遮蔽所述钝化层130的透射区,在所述绝缘层140上涂覆掺杂有纳米粒子151的光刻胶310。经过该步骤230后,形成图3c所示的结构。
其中,所述纳米粒子151可以为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子等,并且所述纳米粒子151均匀混合于所述光刻胶310中。
240:对所述光刻胶310进行曝光处理,形成纳米粒子层150。
具体地,通过对所述光刻胶310进行曝光处理,可以去除部分所述光刻胶310,从而令所述光刻胶310中混合的所述纳米粒子151沉积于所述绝缘层140上。经过该步骤240后,形成如图3d所示的结构。
另外,所述步骤240之后还可以包括步骤250:去除曝光处理后的光刻胶310。
具体地,可以采用溶剂溶解曝光处理后的光刻胶310,经过该步骤250后形成如图3e所示的结构。
为了使所述纳米粒子层150快速的稳定沉积于所述绝缘层140上,所述方法还可以包括:对形成有所述纳米粒子层150的基板110进行烘干处理。
经过上述制备方法得到阵列基板,所述纳米粒子151在所述绝缘层140表面堆积成不同弧度的反射区域,使入射光能从不同的角度反射出去,因此能达到增加视角的效果。同时,所述纳米粒子151是一种能很好分散于高分子材料中的无机粒子,因此得到的所述纳米粒子层150的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层150表面的取向均匀性。因此,本发明的阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,是一种适用于大尺寸户外显示的阵列基板。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (9)
1.一种阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;
其特征在于,所述钝化层远离所述基板一侧的反射区形成有绝缘层;
所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的厚度均匀的纳米粒子层。
2.如权利要求1所述的阵列基板,其特征在于,所述纳米粒子层包含:纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
3.如权利要求1所述的阵列基板,其特征在于,所述绝缘层采用树脂或者二氧化硅材料。
4.一种显示装置,其特征在于,包括权利要求1至3任一项所述的阵列基板。
5.一种阵列基板的制备方法,其特征在于,包括:
在基板上形成薄膜晶体管和钝化层;
在所述钝化层的反射区上形成绝缘层图案;
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶;
对所述光刻胶进行曝光处理,形成厚度均匀的纳米粒子层。
6.如权利要求5所述的制备方法,其特征在于,所述制备方法还包括:对形成有所述纳米粒子层的基板进行烘干处理。
7.如权利要求5所述的制备方法,其特征在于,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶的步骤具体为:采用掩膜板遮蔽所述阵列基板的透射区,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶。
8.如权利要求5所述的制备方法,其特征在于,所述纳米粒子为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
9.如权利要求5所述的制备方法,其特征在于,所述绝缘层采用树脂或者二氧化硅材料。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310322536.0A CN103400837B (zh) | 2013-07-29 | 2013-07-29 | 一种阵列基板及其制备方法、显示装置 |
PCT/CN2013/086609 WO2015014037A1 (zh) | 2013-07-29 | 2013-11-06 | 一种阵列基板及其制备方法、显示装置 |
US14/381,619 US10067377B2 (en) | 2013-07-29 | 2013-11-06 | Array substrate and method for preparing the same, and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310322536.0A CN103400837B (zh) | 2013-07-29 | 2013-07-29 | 一种阵列基板及其制备方法、显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103400837A CN103400837A (zh) | 2013-11-20 |
CN103400837B true CN103400837B (zh) | 2016-09-07 |
Family
ID=49564433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310322536.0A Active CN103400837B (zh) | 2013-07-29 | 2013-07-29 | 一种阵列基板及其制备方法、显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10067377B2 (zh) |
CN (1) | CN103400837B (zh) |
WO (1) | WO2015014037A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972423B (zh) * | 2014-05-08 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种oled发光器件及其制备方法、显示装置 |
CN105118834B (zh) * | 2015-07-17 | 2018-11-13 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板、显示装置 |
CN109427819B (zh) * | 2017-08-31 | 2021-05-04 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN212098347U (zh) | 2020-02-20 | 2020-12-08 | 上海延锋金桥汽车饰件***有限公司 | 用于车辆内部的香味分配装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840103A (zh) * | 2010-04-23 | 2010-09-22 | 上海凯鑫森产业投资控股有限公司 | 一种用于背光模块的扩散片 |
CN202141872U (zh) * | 2011-07-13 | 2012-02-08 | 京东方科技集团股份有限公司 | 半透半反液晶面板及显示设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003262857A (ja) * | 2002-03-11 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半透過型液晶表示装置 |
TW200622357A (en) * | 2004-12-28 | 2006-07-01 | Hon Hai Prec Ind Co Ltd | Display panel and liquid crystal display device |
KR20070042615A (ko) * | 2005-10-19 | 2007-04-24 | 삼성전자주식회사 | 어레이 기판 및 이의 제조방법 |
JP5252334B2 (ja) * | 2006-06-02 | 2013-07-31 | Nltテクノロジー株式会社 | 半透過型液晶表示装置 |
CN101916006B (zh) * | 2010-08-09 | 2012-04-04 | 信利半导体有限公司 | 一种液晶显示装置 |
CN102650780B (zh) * | 2011-05-30 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种像素结构、液晶显示面板及制作方法 |
CN103018951B (zh) * | 2012-12-14 | 2015-02-04 | 京东方科技集团股份有限公司 | 半透半反式液晶显示面板及其制作方法、显示装置 |
CN103293759A (zh) * | 2013-06-27 | 2013-09-11 | 京东方科技集团股份有限公司 | 半透半反显示面板及其制备方法、显示装置 |
-
2013
- 2013-07-29 CN CN201310322536.0A patent/CN103400837B/zh active Active
- 2013-11-06 US US14/381,619 patent/US10067377B2/en active Active
- 2013-11-06 WO PCT/CN2013/086609 patent/WO2015014037A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840103A (zh) * | 2010-04-23 | 2010-09-22 | 上海凯鑫森产业投资控股有限公司 | 一种用于背光模块的扩散片 |
CN202141872U (zh) * | 2011-07-13 | 2012-02-08 | 京东方科技集团股份有限公司 | 半透半反液晶面板及显示设备 |
Also Published As
Publication number | Publication date |
---|---|
CN103400837A (zh) | 2013-11-20 |
US10067377B2 (en) | 2018-09-04 |
WO2015014037A1 (zh) | 2015-02-05 |
US20160238893A1 (en) | 2016-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103400837B (zh) | 一种阵列基板及其制备方法、显示装置 | |
WO2019237765A1 (zh) | 超材料结构单元、超材料及电子装置 | |
CN1194249C (zh) | 反射型液晶显示装置 | |
Suh et al. | Preparation of randomly distributed micro-lens arrays fabricated from porous polymer film and their application as a light extraction component | |
CN105446555B (zh) | 纳米银线导电层叠结构及触控面板 | |
Go et al. | Fine control of optical scattering characteristics of porous polymer light-extraction layer for organic light-emitting diodes | |
CN110109280A (zh) | 一种显示面板及其制作方法、显示装置 | |
Xin et al. | Conductive grid patterns prepared by microcontact printing silver nanoparticles ink | |
US20220049342A1 (en) | Mask and fabricating method thereof, and displaying base plate and fabricating method thereof | |
CN102222775A (zh) | 显示装置 | |
CN106373986A (zh) | 一种显示面板 | |
CN103412446B (zh) | 基板及其制作方法、显示装置 | |
Chou et al. | Roll-to-roll fabrication of a low-reflectance transparent conducting oxide film with subwavelength structures | |
CN107193122A (zh) | 反射型显示面板、显示装置 | |
Zhu et al. | A facile method to enhance out-coupling efficiency in organic light-emitting diodes via a random-pyramids textured layer | |
Stach et al. | Post-lithography pattern modification and its application to a tunable wire grid polarizer | |
Kusama et al. | Double-layer anisotropic light diffusion films fabricated using a two-step UV curing technique | |
CN106783924A (zh) | 一种oled显示面板及其制作方法 | |
CN103354276A (zh) | 封装基板、oled显示面板及其制造方法和显示装置 | |
Xiao et al. | Photoelectric properties of transparent conductive metal mesh films based on crack template and its application in Perovskite solar cells | |
CN104865619A (zh) | 一种防反射膜、其制作方法、显示面板及显示装置 | |
Prachachet et al. | A comparative study on omnidirectional anti-reflection SiO2 nanostructure films coating by glancing angle deposition | |
TW201202752A (en) | Antiglare film having different internal and external haze values and production method thereof | |
Zhang et al. | N-channel transparent organic thin-film transistors with Ag/LiF bilayer transparent source–drain electrodes fabricated by thermal evaporation | |
CN105446025A (zh) | 像素结构及液晶显示器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |