CN103400837B - 一种阵列基板及其制备方法、显示装置 - Google Patents

一种阵列基板及其制备方法、显示装置 Download PDF

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CN103400837B
CN103400837B CN201310322536.0A CN201310322536A CN103400837B CN 103400837 B CN103400837 B CN 103400837B CN 201310322536 A CN201310322536 A CN 201310322536A CN 103400837 B CN103400837 B CN 103400837B
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王新星
柳在健
姚继开
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种阵列基板及其制备方法、显示装置,涉及显示领域。所述阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;所述钝化层远离所述基板一侧的反射区形成有绝缘层;所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。所述纳米粒子层的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层表面的取向均匀性,所述阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,特别适用于大尺寸户外显示的显示装置。

Description

一种阵列基板及其制备方法、显示装置
技术领域
本发明涉及显示技术领域,特别涉及一种阵列基板及其制备方法、显示装置。
背景技术
随着显示技术的日益发展,户外显示装置不再局限于小尺寸的手机、平板电脑以及便携式笔记本等。对于一些大尺寸的产品,例如广场电视、露天电影院以及大型广告牌等显示装置来说,对户外可视性提出了更高的要求,现有的提高户外可视性的技术为半透半反技术,也就是说对半透半反技术提出了更高的要求。
对于大尺寸半透半反技术来说,视角要求超过30°,应用于小尺寸产品的单一镜面反射模式不再适用,必须增加视角。
现有技术中公开了一种增加视角的方法,采用机械摩擦或者刻蚀工艺在反射层进行处理形成不平整表面,这种不平整表面可以作为漫反射表面使光线达到的区域范围增加,从而可以增加视角。但是因为机械摩擦或者刻蚀工艺的破坏程度较大,因此得到的反射层表面不利于液晶分子的平面取向。虽然这种方法增加了视角,但是降低了液晶分子的取向均匀性,从而降低了透过率、对比度以及暗态均匀性等性能。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是:如何提供一种阵列基板及其制备方法、显示装置,以避免降低液晶分子的取向均匀性。
(二)技术方案
为解决上述技术问题,本发明提供一种阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;
所述钝化层远离所述基板一侧的反射区形成有绝缘层;
所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。
其中,所述纳米粒子层包含:纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
其中,所述绝缘层采用树脂或者二氧化硅材料。
本发明还提供一种显示装置,包括所述的阵列基板。
本发明还提供一种阵列基板的制备方法,包括:
在基板上形成薄膜晶体管和钝化层;
在所述钝化层的反射区上形成绝缘层图案;
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶;
对所述光刻胶进行曝光处理,形成纳米粒子层。
其中,所述制备方法还包括:对形成有所述纳米粒子层的基板进行烘干处理。
其中,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶的步骤具体为:采用掩膜板遮蔽所述钝化层的透射区,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶。
其中,所述纳米粒子为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
其中,所述绝缘层采用树脂或者二氧化硅材料。
(三)有益效果
本发明实施例所述的阵列基板及其制备方法、显示装置,所述阵列基板包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;所述钝化层远离所述基板一侧的反射区形成有绝缘层;所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的纳米粒子层。。所述纳米粒子层的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层表面的取向均匀性,所述阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,特别适用于大尺寸户外显示的显示装置。
附图说明
图1是本发明实施例1所述阵列基板的结构示意图;
图2是本发明实施例3所述阵列基板的制备方法流程图;
图3a至3e是本发明实施例3所述阵列基板的制备工艺流程图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例1
图1是本发明实施例1所述阵列基板的结构示意图,如图1所示,所述阵列基板包括:基板110,形成在所述基板110一侧的薄膜晶体管(TFT,Thin Film Transistor)120和钝化层130,并且所述阵列基板划分为反射区和透射区。在所述反射区,所述钝化层130远离所述基板110一侧形成有
绝缘层140,所述绝缘层140远离所述基板110一侧形成有用于对入射光进行漫反射的纳米粒子层150。
具体地,所述绝缘层140可以采用树脂、二氧化硅等绝缘材料。通过设置所述绝缘层140,一方面可以避免所述纳米粒子层150上的静电对所述钝化层130上的电路造成破坏;另一方面,所述钝化层130的表面一般凹凸不平,不利于形成厚度均匀的所述纳米粒子层150,通过设置所述绝缘层140后,可以为形成所述纳米粒子层150提供一个较平坦的基底,利于形成厚度均匀的所述纳米粒子层150。
所述纳米粒子层150包含纳米粒子151,所述纳米粒子151可以是纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子等。
所述纳米粒子151在所述绝缘层140表面堆积成不同弧度的反射区域,使入射光能从不同的角度反射出去,因此能达到增加视角的效果。同时,所述纳米粒子151是一种能很好分散于高分子材料中的无机粒子,因此得到的所述纳米粒子层150的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层150表面的取向均匀性。因此,本发明的阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,是一种适用于大尺寸户外显示的阵列基板。
实施例2
本实施例提供一种显示装置,所述显示装置包括实施例1所述的阵列基板,所述显示装置可以是手机、平板电脑以及便携式笔记本等小尺寸的显示装置,也可以是广场电视、露天电影院以及大型广告牌等大尺寸的户外显示装置。
实施例3
图2是本发明实施例3所述阵列基板的制备方法流程图,图3a至3e是本发明实施例3所述阵列基板的制备工艺流程图。参见图2和图3a至3e,所述制备方法包括:
210:在基板110上形成薄膜晶体管120和钝化层130。
具体地,可以按照现有工艺在基板110上依次形成薄膜晶体管120和钝化层130,不再赘述,该步骤210后得到如图3a所示的结构。
220:在所述钝化层130的反射区上形成绝缘层140图案。
具体地,所述绝缘层140可以采用树脂或者二氧化硅等绝缘材料,通过设置所述绝缘层140,一方面可以避免后述纳米粒子层150上的静电对所述钝化层130上的电路造成破坏;另一方面,所述钝化层130的表面一般凹凸不平,不利于形成所述纳米粒子层150,通过设置所述绝缘层140后,可以为形成所述纳米粒子层150提供一个较平坦的基底。经过该步骤220后形成图3b所示的结构。
230:在所述绝缘层140上涂覆掺杂有纳米粒子151的光刻胶310。
具体地,该步骤可以包括:采用掩膜板遮蔽所述钝化层130的透射区,在所述绝缘层140上涂覆掺杂有纳米粒子151的光刻胶310。经过该步骤230后,形成图3c所示的结构。
其中,所述纳米粒子151可以为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子等,并且所述纳米粒子151均匀混合于所述光刻胶310中。
240:对所述光刻胶310进行曝光处理,形成纳米粒子层150。
具体地,通过对所述光刻胶310进行曝光处理,可以去除部分所述光刻胶310,从而令所述光刻胶310中混合的所述纳米粒子151沉积于所述绝缘层140上。经过该步骤240后,形成如图3d所示的结构。
另外,所述步骤240之后还可以包括步骤250:去除曝光处理后的光刻胶310。
具体地,可以采用溶剂溶解曝光处理后的光刻胶310,经过该步骤250后形成如图3e所示的结构。
为了使所述纳米粒子层150快速的稳定沉积于所述绝缘层140上,所述方法还可以包括:对形成有所述纳米粒子层150的基板110进行烘干处理。
经过上述制备方法得到阵列基板,所述纳米粒子151在所述绝缘层140表面堆积成不同弧度的反射区域,使入射光能从不同的角度反射出去,因此能达到增加视角的效果。同时,所述纳米粒子151是一种能很好分散于高分子材料中的无机粒子,因此得到的所述纳米粒子层150的厚度均匀,不会产生不平整表面而影响液晶分子在所述纳米粒子层150表面的取向均匀性。因此,本发明的阵列基板不仅增加了视角,还保证了透过率、对比度以及暗态均匀性等性能,是一种适用于大尺寸户外显示的阵列基板。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。

Claims (9)

1.一种阵列基板,包括:基板,形成在所述基板一侧的薄膜晶体管和钝化层,并且所述阵列基板划分为反射区和透射区;
其特征在于,所述钝化层远离所述基板一侧的反射区形成有绝缘层;
所述绝缘层远离所述基板的一侧形成有用于对入射光进行漫反射的厚度均匀的纳米粒子层。
2.如权利要求1所述的阵列基板,其特征在于,所述纳米粒子层包含:纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
3.如权利要求1所述的阵列基板,其特征在于,所述绝缘层采用树脂或者二氧化硅材料。
4.一种显示装置,其特征在于,包括权利要求1至3任一项所述的阵列基板。
5.一种阵列基板的制备方法,其特征在于,包括:
在基板上形成薄膜晶体管和钝化层;
在所述钝化层的反射区上形成绝缘层图案;
在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶;
对所述光刻胶进行曝光处理,形成厚度均匀的纳米粒子层。
6.如权利要求5所述的制备方法,其特征在于,所述制备方法还包括:对形成有所述纳米粒子层的基板进行烘干处理。
7.如权利要求5所述的制备方法,其特征在于,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶的步骤具体为:采用掩膜板遮蔽所述阵列基板的透射区,在所述绝缘层上涂覆掺杂有纳米粒子的光刻胶。
8.如权利要求5所述的制备方法,其特征在于,所述纳米粒子为纳米二氧化钛粒子、纳米三氧化二铝粒子和/或纳米氧化锌粒子。
9.如权利要求5所述的制备方法,其特征在于,所述绝缘层采用树脂或者二氧化硅材料。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840103A (zh) * 2010-04-23 2010-09-22 上海凯鑫森产业投资控股有限公司 一种用于背光模块的扩散片
CN202141872U (zh) * 2011-07-13 2012-02-08 京东方科技集团股份有限公司 半透半反液晶面板及显示设备

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CN102650780B (zh) * 2011-05-30 2014-11-19 京东方科技集团股份有限公司 一种像素结构、液晶显示面板及制作方法
CN103018951B (zh) * 2012-12-14 2015-02-04 京东方科技集团股份有限公司 半透半反式液晶显示面板及其制作方法、显示装置
CN103293759A (zh) * 2013-06-27 2013-09-11 京东方科技集团股份有限公司 半透半反显示面板及其制备方法、显示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840103A (zh) * 2010-04-23 2010-09-22 上海凯鑫森产业投资控股有限公司 一种用于背光模块的扩散片
CN202141872U (zh) * 2011-07-13 2012-02-08 京东方科技集团股份有限公司 半透半反液晶面板及显示设备

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