CN103390613B - The solid matter row LED area array device of high uniformity of luminance and preparation method - Google Patents
The solid matter row LED area array device of high uniformity of luminance and preparation method Download PDFInfo
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Abstract
The solid matter row LED area array device of high uniformity of luminance and preparation method, relate to luminescence display technical field, solve existing plane LED micro-display device and cause using restricted problem owing to not bending, electric current injects from Graphene transparent upper electrode, flow out from bottom electrode, form electric field in the devices so that positive negative carrier is at luminescent layer recombination luminescence.Wherein part light passes upward through photic zone, Graphene transparent upper electrode, penetrates from lenticule；Part light reaches down to reflecting layer, is reflected by reflecting layer, through luminescent layer, photic zone, Graphene transparent upper electrode, penetrates from lenticule.Owing to the principle of luminosity of this luminescent device is that the Carrier recombination in p-n junction is luminous, having the nonlinear characteristic of diode current voltage, luminosity also has nonlinear characteristic with the size of injection current.The present invention by circuit control phase primitive element bright secretly, it is achieved luminescence display.
Description
Technical field
The invention belongs to luminescence display technical field, relate to a kind of new micro luminescent device, specifically one
Plant AlGaInP-LED flexibility micro element and manufacture method.
Background technology
In recent years, along with the development of electronic industry, Miniature luminous device part quickly grows.Plane LED micro display array phase
Than conventional light emitting device, there is the most incomparable advantage, but owing to its unyielding feature largely limits it
Range of application.Along with the development of science and technology, to realizing high-resolution, become clear lasting and frivolous and can apply at curved surface
The demand of miniature flexible LED array of display more and more urgent.
Summary of the invention
The technical problem that the invention solves the problems that is to provide solid matter row LED area array device and the preparation of optical uniformity occurred frequently
Method, this device has the flexible connecting material between metal electrode and the luminescence unit of flexibility, has being readily bent and be prone to
The feature carried.
The solid matter row LED area array device of high uniformity of luminance, including photic zone, luminescent layer, reflecting layer, substrate, upper electrode,
Upper contact conductor, bottom electrode, bottom electrode lead-in wire, flexible region and lenticule；Luminescent layer, printing opacity it is followed successively by above described reflecting layer
Layer, upper electrode and lenticule, for substrate below reflecting layer；The composition LED of described photic zone, luminescent layer, reflecting layer and substrate
Luminescence unit, multiple LED luminescence units are uniformly arranged composition array of light emitting cells；It is soft between the plurality of LED luminescence unit
Property region, flexible region makes each luminescence unit be sequentially connected with and make LED array of light emitting cells flexible；Described euphotic on
Surface is placed with electrode, and the upper surface of flexible material is placed with contact conductor, is in the upper electrode of same a line and upper electrode
Lead-in wire is sequentially connected and connects, and the underside view of part at substrate has bottom electrode, is in the bottom electrode of same string by bottom electrode lead-in wire even
Connect；The upper lead-in wire row that described bottom electrode becomes with upper electrode and upper electrode lead wire set with the lower lead-in wire row of bottom electrode lead-in wire composition is row
On column direction, antarafacial is vertical, and the material of described upper electrode and upper contact conductor is Graphene.
The preparation method of the solid matter row LED area array device of high uniformity of luminance, the method is realized by following steps:
Step one, the thinning back side of luminescence chip substrate；First, selecting luminescence chip, described luminescence chip is by printing opacity
Layer, luminescent layer, reflecting layer and substrate composition；Secondly, luminescence chip is carried out, and prepares one at euphotic upper surface
Layer protecting film；Then bonding agent is used to paste screening glass, finally, the back of the body to the substrate of luminescence chip at the upper surface of protecting film
After face is thinning, it is processed by shot blasting；
Step 2, formation back side island structure；First, the lower surface of the substrate after thinning prepares one layer of masking layer, so
After, at masking layer surface-coated photoresist, make masking layer output window, window shape and flex region by photoetching, etching process
Territory is identical；Substrate is carried out selective etch, it is thus achieved that the island structure at the back side；
Step 3, the lower masking layer of removal, then, prepare bottom electrode and bottom electrode lead-in wire；
Step 4, the back side of luminescence chip are fixed；Use bonding agent that the lower surface of luminescence chip is fixed on lower screening glass
On；
Step 5, the pixel segmentation of luminescence chip, it is thus achieved that multiple LED luminescence units；
Screening glass and bonding agent in step May Day, removal, expose the protecting film being positioned at luminescence chip upper surface；
Step 5 two, the luminescence chip described in step May Day is carried out, photoetching and corrosion protection film, expose flex region
Territory window, carries out wet etching or ICP etching under the sheltering of protecting film and photoresist, removes completely luminescence chip upper surface
The luminescence chip material of flexible region, it is achieved the pixel segmentation of luminescence chip, it is thus achieved that multiple LED luminescence units；
Step 6, the flexible region prepared between light emitting pixel；It is coated with at the luminescence chip upper surface realizing luminescence unit segmentation
Cover flexible material, and carry out precuring；Removed the flexible material of photic zone (1) upper surface by photoetching and etching process, and lead to
Cross the formation concave shape removed photoresist and again corrode the flexible material upper surface making formed filling, complete the complete of flexible material
All solidstate；Remove protecting film；
Step 7, the upper surface of luminescence chip prepare on Graphene transparent flexible electrode and on contact conductor；
Step 8, prepare lenticule, on completing, prepare high adhesion on the luminescence chip of electrode and upper contact conductor
Polymeric layer, obtains polymer lenticules by hot melt；
Step 9, the screening glass removing the luminescence chip back side and bonding agent, make circuit lead, complete element manufacturing.
Beneficial effects of the present invention: the solid matter row LED area array device of high uniformity of luminance of the present invention worked
Cheng Shi, electric current, from upper electrode injection, flows out from bottom electrode, forms electric field in the devices so that positive negative carrier is multiple at luminescent layer
Close luminescence.Wherein part light passes upward through photic zone, penetrates from lenticule；Part light reaches down to reflecting layer, anti-by reflecting layer
Penetrate, through luminescent layer, photic zone, penetrate from lenticule.Owing to the principle of luminosity of this luminescent device is that the carrier in p-n junction is multiple
Closing luminescence, have the nonlinear characteristic of diode current voltage, luminosity also has non-linear spy with the size of injection current
Property.The present invention by circuit control phase primitive element bright secretly, it is achieved luminescence display.The flexible device that the present invention proposes is owing to having
Connection flexible material in flexible electrode structure and groove, it is possible to achieve the function of bending display, and the making of this device
Simple for process.The device that the present invention proposes uses the upper and lower electrode that antarafacial is vertical, and uses on the Graphene of flexible and transparent
Electrode, can obtain higher luminous efficiency in theory, and can obtain more uniform CURRENT DISTRIBUTION.
Accompanying drawing explanation
Fig. 1 is the design sketch of the solid matter row LED area array device of high uniformity of luminance of the present invention.Wherein, Fig. 1 a is
The extended configuration of device, Fig. 1 b is the case of bending of device.
Fig. 2 a is the principal section figure of the solid matter row LED area array device of high uniformity of luminance of the present invention, and Fig. 2 b is this
The left profile figure of invention miniature flexible light-emitting diode display part.
Fig. 3 be high uniformity of luminance of the present invention solid matter row LED area array device in use square luminescence unit
Luminescence unit scattergram.
In Fig. 4 Fig. 4 a and Fig. 4 b be high uniformity of luminance of the present invention solid matter row LED area array device in employing side
The upper electrode of two kinds of shape luminescence unit and upper electrode pin configuration schematic diagram；
In Fig. 5 Fig. 5 a to Fig. 5 d be high uniformity of luminance of the present invention solid matter row LED area array device in employing side
Four kinds of bottom electrodes of shape luminescence unit and bottom electrode pin configuration schematic diagram.
Fig. 6 be high uniformity of luminance of the present invention solid matter row LED area array device in use circular luminous unit
Luminescence unit scattergram.
In Fig. 7 Fig. 7 a and Fig. 7 b be high uniformity of luminance of the present invention solid matter row LED area array device in use circle
The upper electrode of two kinds of shape luminescence unit and upper electrode pin configuration schematic diagram.
In Fig. 8 Fig. 8 a to Fig. 8 d be high uniformity of luminance of the present invention solid matter row LED area array device in use circle
Four kinds of bottom electrodes of shape luminescence unit and bottom electrode pin configuration schematic diagram.
In Fig. 9, figure to figure is the manufacture method of the solid matter row LED area array device of high uniformity of luminance of the present invention
Basic process steps；Wherein, Fig. 9 n and Fig. 9 o is elevation cross-sectional view and the left view section using the method for the present invention to obtain device
Figure.
Figure 10 is the another kind of structural representation of the solid matter row LED area array device of high uniformity of luminance of the present invention.
Detailed description of the invention
Detailed description of the invention one, combine Fig. 1 to Fig. 8 present embodiment is described, the solid matter row LED face of high uniformity of luminance
Battle array device, including: photic zone 1, luminescent layer 2, reflecting layer 3, substrate 4, upper electrode 5, upper contact conductor 9, bottom electrode 6, bottom electrode
Lead-in wire 10, flexible region 7 and lenticule 8.The above of reflecting layer 3 is followed successively by luminescent layer 2, photic zone 1, upper electrode 5 and lenticule
8, reflecting layer 3 substrate 4 is presented herein below.Photic zone 1, luminescent layer 2, reflecting layer 3 and substrate 4 form LED luminescence unit.LED is luminous
Unit is uniformly arranged composition array of light emitting cells.Being flexible region 7 between luminescence unit, flexible region 7 makes each luminescence unit
It is sequentially connected with and make whole LED array of light emitting cells flexible.The upper surface of photic zone 1 is placed with electrode 5, flexible region 7
Upper surface be placed with contact conductor 9, be in the upper electrode 5 of same row and be sequentially connected with upper contact conductor 9 and connect, at substrate 4
Underside view of part have bottom electrode 6, the flexible material between pixel is placed with bottom electrode lead-in wire 10, place close to the region of lower surface
Bottom electrode 6 and bottom electrode lead-in wire 10 in same string is sequentially connected and connects, the lower lead-in wire row of bottom electrode 6 and bottom electrode lead-in wire 10 composition
Vertical with upper lead antarafacial on direction that upper electrode 5 and upper contact conductor 9 form.Described upper electrode 5 and upper contact conductor 9
Material be graphene film.
Present embodiment luminescence unit is square, rectangle, circle or other shapes.Upper electrode 5 is shaped as back-shaped, annulus
Shape, wall scroll shape, double bar shaped or other shape.Bottom electrode 6 be shaped as rectangle, circle, wall scroll shape, double bar shaped or other shape.
Present embodiment also includes the flexible region 7 being positioned at substrate 4 lower surface of LED luminescence unit, and i.e. back side flexible material layer, described
Back side flexible material layer covers bottom electrode 6 and bottom electrode lead-in wire 10.
Photic zone 1 described in present embodiment, luminescent layer 2, reflecting layer 3, substrate 4 are general for made by traditional handicraft
AlGaInPLED epitaxial wafer material.The material of upper electrode 5 and upper contact conductor 9 is graphene film, and bottom electrode 6, bottom electrode draw
The material of line 10 is Graphene or Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or by Cr/Au or
The composite membrane of Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au Yu Cu or Au composition, or be Graphene.Flexible region 7 material is
Other flexible material of polyimides or flexible-epoxy or easily coating molding, lenticule 8 material be hard epoxy or
PDMS or other high permeability material.
Detailed description of the invention two, combining Fig. 9 and Figure 10 present embodiment is described, present embodiment is detailed description of the invention one
The preparation method of the solid matter row LED area array device of described high uniformity of luminance, uses manufacture method from bottom to top, the most first makes
Make structure, then, then protect structure, prepare Facad structure.Detailed process is:
A. the thinning back side of luminescence chip, i.e. carries out thinning to the lower surface of luminescence chip:
A) host material that present embodiment uses is luminescence chip, and luminescence chip used is by photic zone, luminescent layer, anti-
Penetrate layer and substrate is constituted, as illustrated in fig. 9.
B) cleaning of luminescence chip is carried out.Then at the upper surface of luminescence chip, i.e. photic zone upper surface prepares one layer of guarantor
Cuticula, as shown in figure 9b.
C) bonding agent screening glass on protecting film upper surface is pasted is used, as is shown in fig. 9 c.
D) lower surface of the substrate of whole luminescence chip is carried out thinning, after being thinned to desired thickness, is processed by shot blasting,
As shown in figure 9d.
B. formation lower surface island structure:
A) first, the lower surface of the substrate after thinning prepares one layer of masking layer.
B) at masking layer surface-coated photoresist, make masking layer output window by photoetching, etching process, window shape with
Flexible region is identical.
C) substrate is carried out selective etch, to obtain the island structure of lower surface, as shown in figure 9e.This special construction
Pattern can make metal electrode attached thereto tool flexible.
C. prepare bottom electrode, bottom electrode goes between and back side flexible material:
A) remove lower masking layer, then, prepare thin film bottom electrode and bottom electrode lead-in wire；Or thick film bottom electrode and bottom electrode draw
Line.And lead-in wire protected by coating flexible material.
B) back side flexible material is prepared, as shown in figure 9f at the substrate lower surface carrying out bottom electrode and bottom electrode lead-in wire.
D. the luminescence chip back side is fixed: in order to protect the luminescence chip lower surface preparing back side flexible material,
It is adhesively secured on lower screening glass, such as Fig. 9 g.
E. the pixel segmentation of luminescence chip:
A) remove upper screening glass and bonding agent, expose the protecting film being positioned at luminescence chip upper surface, such as Fig. 9 h.
B) it is carried out, photoetching and corrosion protection film, expose flexible region window.Covering of protecting film and photoresist
Cover lower luminescence chip upper surface is carried out wet etching or ICP etching, remove the luminescence chip material of flexible region completely, it is achieved
The pixel segmentation of luminescence chip, as illustrated in fig. 9i.
F. the flexible region between light emitting pixel is prepared:
A) realize the luminescence chip upper surface coating flexible material of pixel separation, and carry out precuring, as shown in Fig. 9 j.
B) flexible material of photic zone upper surface is removed by photoetching and etching process.And by removing photoresist and again corroding
Make the formation concave shape of formed packing material upper surface, in order to be conducive to attached thereto powering on to have flexible
Performance.
C) being fully cured of flexible material is completed.
D) protecting film is removed, such as Fig. 9 k.
G. electrode and the preparation of upper contact conductor on Graphene transparent flexible: carry out on the luminescence unit of grapheme material soft
Contact conductor and the making of the outer flexible upper contact conductor of luminescence unit in property, as shown in Fig. 9 l.
H. lenticule is prepared: complete contact conductor and the luminous core of the outside upper contact conductor of luminescence unit on luminescence unit
Prepare the polymeric layer of high adhesion on sheet, obtain polymer lenticules by hot melt.The left view profile of luminescence chip and
Elevation cross-sectional view is as shown in fig. 9m.
I. the screening glass at the luminescence chip back side and bonding agent are removed, the left view profile of obtained pel array and facing
Profile is as shown in Fig. 9 n and 9o.Make circuit lead, complete element manufacturing.
Illustrate that present embodiment, Figure 10 a and 10b respectively do not contain the LED of back side flexible material layer and show in conjunction with Figure 10
Device left profile figure and principal section figure.
Present invention employs the flexible micro-display device of inorganic active illuminating diode chip for backlight unit preparation, simple in construction, firm, sound
Should be fast；And it is short and drive electric current low and limit the problem of light output intensity to overcome organic light-emitting device life period, thus provide one
Plant self-luminous, little, low in energy consumption and based on high brightness luminescence chip the flexible flexible micro-display device of volume and preparation side thereof
Method.This flexible flexible micro-display device may apply to multiple fields such as medical apparatus and instruments, micro sensor devices manufacture.
Detailed description of the invention three, present embodiment are the solid matter row of the high uniformity of luminance described in detailed description of the invention two
The embodiment of LED area array device preparation method:
One, the lower surface of luminescence chip is carried out thinning:
First, the luminescence chip that present embodiment uses is AlGaInP-LED epitaxial wafer, by photic zone, luminescent layer, reflection
Layer and substrate are constituted, and the thickness of luminescence chip is 200 μm～1000 microns.Use mechanical reduction and polishing or chemical reduction and throwing
Light or the machinery lower surface to luminescence chip that combines with chemical method carries out thinning and polishing, thinning after luminescence chip
It is 20～300 μm.
Secondly, Protective coatings prepared by the upper surface at luminescence chip be silicon dioxide or silicon nitride or silicon dioxide with
The composite membrane of silicon nitride composition or metal or organic material or inorganic material or other thin-film material that can play a protective role.Protect
Cuticula preparation method is electron beam evaporation or radio-frequency sputtering or magnetron sputtering or sol-gal process or other film growth method.Viscous
Connecing agent material is photoresist or heat-curable glue or ultra-violet curing glue or other adhesives.The material of upper screening glass is silicon or glass
Glass is quartzy or ceramic or aluminum or titanium or other inorganic material or organic material or metal material.Thinning method is mechanical reduction
Or chemical reduction, finishing method is mechanical polishing or chemical polishing.
Two, lower surface island structure is formed:
First, the masking layer material that prepared by the lower surface of the substrate after thinning is silicon dioxide or silicon nitride or titanium dioxide
The composite membrane of silicon and silicon nitride composition or metal or organic material or inorganic material or other thin film material that can play a protective role
Material.
Secondly, at masking layer surface-coated photoresist, carry out front baking, expose, develop and after bake formation and flexible region phase
Window with figure.
Then, under the protection of photoresist, masking layer corroded or etches, making the masking layer of substrate lower surface output
Window.
Finally, substrate is carried out the selective etch method with the island structure that obtains lower surface as ICP or the dry method such as RIE
Etching technics or wet corrosion technique.Island structure figure is square or rectangle or circular or other shape, with light emitting pixel
Shape is identical.Lift-off technique can also be used to complete.
Three, bottom electrode, bottom electrode lead-in wire and back side flexible material are prepared: cover under being removed by wet etching or dry etching
Cover layer.Prepare thin film bottom electrode by lift-off technique or plated film-photoetching-etching process and bottom electrode goes between, or by thickness
The techniques such as glue photoetching, evaporation and electroforming thickening prepare thick film bottom electrode and bottom electrode lead-in wire.
The material of described bottom electrode and bottom electrode lead-in wire is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au
Or Al or Cu, or the composite membrane being made up of Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au and Cu or Au, or be stone
Ink alkene.Film vapor deposition mode is electron beam evaporation or radio-frequency sputtering or magnetron sputtering.
The concrete preparation method of thick film bottom electrode and bottom electrode lead-in wire has two kinds:
The first: first carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure, the more lower electricity of evaporation
Very thin films, bottom electrode select Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other with substrate, there is good ohmic and connect
Touch the metal of characteristic.After stripping, carry out electroforming, make electrode thicken.Electroforming material is identical or different with the thin-film material of evaporation.
The second: be first deposited with lower electrode film, bottom electrode selects Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au
Or other has the metal of good ohmic contact performance with substrate.Then carry out thick resist lithography and obtain contrary with bottom electrode figure
Thick photoresist figure.Electroforming makes electrode thicken, and electroforming material is identical or different with the thin-film material of evaporation.Finally, thick light is removed
Photoresist obtains thick membrane electrode.
The preparation method of described back side flexible material is: preparing bottom electrode and the substrate lower surface of bottom electrode lead-in wire
Rotary coating or the flexible material coating of spraying desired thickness, then solidify, form back side flexible material layer.The back side is flexible
The material of material layer be polyimides or flexible-epoxy or polydimethylsiloxane (PDMS) or other can coat film forming
Flexible organic material.
Four, the lower surface of luminescence chip is fixed: adhesive material be photoresist or heat-curable glue or ultra-violet curing glue or its
Its adhesives.Lower screening glass material is silicon or glass is quartzy or ceramic or aluminum or titanium or other metal materials or inorganic material
Or organic material.
Five, the pixel segmentation of luminescence chip:
First, remove upper bonding agent between screening glass and protecting film by wet method or dry method, make screening glass and luminous core
Sheet separates, and exposes the protecting film being positioned at luminescence chip upper surface.
Secondly, the step preparing flexible region window is: form flexible region photoetching on protecting film by photoetching process
Glue graph window, obtains the graph window of protecting film under the protection of photoresist by dry etching or wet corrosion technique.Light
Photoresist thickness is 0.2 μm-10 μm, under the sheltering of protecting film and photoresist, luminescence chip upper surface is carried out wet etching or
ICP etches, and etching depth is by photic zone, luminescent layer, reflecting layer, substrate etching thoroughly, arrives bottom electrode, it is achieved luminescence chip
Pixel is split.
Finally, wet etching or dry etch process is used to remove protecting film.
Six, the flexible region between light emitting pixel is prepared: in the flexibility of the luminescence chip upper surface coating realizing pixel separation
Material i.e. pixel connecting material be polyimides or flexible-epoxy or polydimethylsiloxane (PDMS) or other can coat
The flexible organic material of film forming.Precuring mode is for being heating and curing or normal temperature cure.Then, by photoetching and wet corrosion technique
Remove the flexible material of photic zone upper surface.Then remove photoresist, and carry out anticaustic with caustic or specific solvent, make to be formed
The formation concave shape of packing material upper surface.
Seven, electrode and the preparation of upper contact conductor on Graphene transparent flexible: use chemical vapour deposition technique or liquid phase
Electrochemical deposition technique or combined with photoetching, mask or corrosion technology by the aqueous dispersions spin coating technique of Graphene completes
The luminescence chip upper surface of step C prepares electrode and upper contact conductor on Flexible graphene thin film.
Eight, prepare lenticule: on completing electrode and on contact conductor luminescence chip on coat one layer of polymeric colloid,
Concrete thickness determines according to design and processes experiment；Polymeric colloid is carried out ultra-violet curing or heat cure, obtains having relatively
The polymeric layer of high adhesion；The certain thickness photoresist of spin coating on polymer after hardening, front baking, expose, develop after, adopt
Photoresist lenticule is made by hot melt；Use reactive ion etching that photoresist lenticule is transferred to aforesaid polymer again
On, obtain polymer lenticules.Polymer lens material is polyimides or epoxy resin or SU-8 photoresist.
Nine, the screening glass of luminescence chip lower surface and bonding agent wet method or dry method are removed.Obtain the LED of graphene-structured
Display device.
Claims (7)
1. the method preparing the solid matter row LED area array device of high uniformity of luminance, including photic zone (1), luminescent layer (2), reflection
Layer (3), substrate (4), upper electrode (5), upper contact conductor (9), bottom electrode (6), bottom electrode lead-in wire (10), flexible region (7) and
Lenticule (8)；It is characterized in that, above described reflecting layer (3), be followed successively by luminescent layer (2), photic zone (1), upper electrode (5) and micro-
Mirror (8), for substrate (4) below reflecting layer (3)；Described photic zone (1), luminescent layer (2), reflecting layer (3) and substrate (4) composition
LED luminescence unit, multiple LED luminescence units are uniformly arranged composition array of light emitting cells；Between the plurality of LED luminescence unit it is
Flexible region (7), flexible region (7) makes each luminescence unit be sequentially connected with and make LED array of light emitting cells flexible；Described
The upper surface of photosphere (1) is placed with electrode (5), and the upper surface of flexible region (7) is placed with contact conductor (9), is in same
The upper electrode (5) of a line is sequentially connected with upper contact conductor (9) and connects, and the underside view of part at substrate (4) has bottom electrode (6), place
Bottom electrode (6) in same string is connected by bottom electrode lead-in wire (10)；Described bottom electrode (6) and bottom electrode lead-in wire (10) form
Lower lead-in wire row form with upper electrode (5) and upper contact conductor (9) upper go between capable in orientation antarafacial vertical, described in power on
The material of pole (5) and upper contact conductor (9) is Graphene；It is characterized in that, the method is realized by following steps:
Step one, the thinning back side of luminescence chip substrate；First, select luminescence chip, described luminescence chip by photic zone, send out
Photosphere, reflecting layer and substrate composition；Secondly, luminescence chip is carried out, and prepares one layer of protection at euphotic upper surface
Film；Then bonding agent is used to paste screening glass, finally, the thinning back side to the substrate of luminescence chip at the upper surface of protecting film
After, it is processed by shot blasting；
Step 2, formation back side island structure；First, the lower surface of the substrate after thinning prepares one layer of masking layer, then,
Masking layer surface-coated photoresist, makes masking layer output window, window shape and flexible region phase by photoetching, etching process
With；Substrate is carried out selective etch, it is thus achieved that the island structure at the back side；
Step 3, the lower masking layer of removal, then, prepare bottom electrode and bottom electrode lead-in wire；
Step 4, the back side of luminescence chip are fixed；Bonding agent is used to be fixed on lower screening glass by the lower surface of luminescence chip；
Step 5, the pixel segmentation of luminescence chip, it is thus achieved that multiple LED luminescence units；
Screening glass and bonding agent in step May Day, removal, expose the protecting film being positioned at luminescence chip upper surface；
Step 5 two, the luminescence chip described in step May Day is carried out, photoetching and corrosion protection film, expose flexible region window
Mouthful, under the sheltering of protecting film and photoresist, luminescence chip upper surface is carried out wet etching or ICP etching, removes flexibility completely
The luminescence chip material in region (7), it is achieved the pixel segmentation of luminescence chip, it is thus achieved that multiple LED luminescence units；
Step 6, the flexible region prepared between light emitting pixel；Soft in the luminescence chip upper surface coating realizing luminescence unit segmentation
Property material, and carry out precuring；The flexible material of photic zone (1) upper surface is removed by photoetching and etching process, and by going
Glue and again corrosion make the formation concave shape of the flexible material upper surface of formed filling, complete the most solid of flexible material
Change；Remove protecting film；
Step 7, the upper surface of luminescence chip prepare on Graphene transparent flexible electrode and on contact conductor；
Step 8, prepare lenticule (8), on completing, on the luminescence chip of electrode and upper contact conductor, prepare the poly-of high adhesion
Compound layer, obtains polymer lenticules by hot melt；
Step 9, the screening glass removing the luminescence chip back side and bonding agent, make circuit lead, complete element manufacturing.
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 1, its feature exists
In, also include step 10, the process of preparation back side flexible material: particularly as follows: preparing bottom electrode and the base of bottom electrode lead-in wire
The lower surface rotary coating of sheet or the flexible material coating of spraying desired thickness, then solidify, form back side flexible material
Layer.
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 1, its feature exists
In, in step 7, use chemical vapour deposition technique or liquid phase electrochemical deposition technique to prepare at the upper surface of luminescence chip
Upper electrode (5) and upper contact conductor (9).
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 1, its feature exists
In, described bottom electrode (6), bottom electrode lead-in wire (10) material be Cr/Au, Ti/Pt/Au, Ti/Mo/Au, AuGeNi/Au, Al or
Any one in Cu, or for being made up of with Cu any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au
Composite membrane；Or be by any one composite membrane formed with Au in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au,
Or be Graphene.
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 1, its feature exists
In, in step 3, prepare thin film bottom electrode by lift-off technique or plated film, photoetching and etching process and bottom electrode go between,
Or prepare thick film bottom electrode and bottom electrode lead-in wire by the technique of thick resist lithography, evaporation and electroforming thickening.
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 5, its feature exists
Preparation method in, bottom electrode (6) and bottom electrode lead-in wire (10) is one of following two kinds:
The first: first carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure, then it is thin to be deposited with bottom electrode
Film, after stripping, carries out electroforming, makes electrode thicken；Obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10), described electroforming material
Identical or different with the thin-film material of evaporation；
The second: the evaporation mode initially with electron beam evaporation or radio-frequency sputtering or magnetron sputtering is deposited with lower electrode film, so
After carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure；Electroforming makes electrode thicken, electroforming material and steaming
The thin-film material of plating is identical or different；Finally, remove thick photoresist and obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10).
The method of the solid matter row LED area array device preparing high uniformity of luminance the most according to claim 1, its feature exists
In, the detailed process preparing lenticule (8) described in step 8 is: electrode (5) and the LED of upper contact conductor (9) on completing
Coating one layer of polymeric colloid layer on luminescence unit, the thickness of described colloid layer determines according to design and processes experiment；To polymerization
Thing colloid layer carries out ultra-violet curing or heat cure, obtains the polymeric layer with higher adhesion；On polymer after hardening
Spin coating photoresist, front baking, expose, develop after, use hot melt to make photoresist lenticule；Use reactive ion etching by photoetching again
Glue lenticule is transferred on described polymeric layer, it is thus achieved that polymer lenticules (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310353583.1A CN103390613B (en) | 2013-08-14 | 2013-08-14 | The solid matter row LED area array device of high uniformity of luminance and preparation method |
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| CN104953001A (en) * | 2015-05-29 | 2015-09-30 | 华灿光电(苏州）有限公司 | Transparent electroconductive film preparation method |
| US11114599B2 (en) * | 2017-03-31 | 2021-09-07 | 3M Innovative Properties Company | Electronic devices including solid semiconductor dies |
| CN107170773B (en) * | 2017-05-23 | 2019-09-17 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
| CN107634130A (en) * | 2017-09-01 | 2018-01-26 | 哈尔滨工业大学 | A kind of flexible electronic device for stablizing temperature control using μ LED |
| CN108258006B (en) * | 2017-12-21 | 2021-04-06 | 厦门市三安光电科技有限公司 | Micro light emitting device |
| CN111025757B (en) * | 2019-12-25 | 2022-06-21 | 业成科技（成都）有限公司 | Electronic device and method for manufacturing the same |
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| JPH01311501A (en) * | 1988-06-10 | 1989-12-15 | Mitsubishi Cable Ind Ltd | Light emitting diode lighting fixture |
| WO2008069204A1 (en) * | 2006-12-04 | 2008-06-12 | Alps Electric Co., Ltd. | Light emitting device and projector |
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| JPH01311501A (en) * | 1988-06-10 | 1989-12-15 | Mitsubishi Cable Ind Ltd | Light emitting diode lighting fixture |
| WO2008069204A1 (en) * | 2006-12-04 | 2008-06-12 | Alps Electric Co., Ltd. | Light emitting device and projector |
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