CN103368577B - 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 - Google Patents
基于对合并式mems加速计传感器斩波的降噪方法及电子电路 Download PDFInfo
- Publication number
- CN103368577B CN103368577B CN201310120172.8A CN201310120172A CN103368577B CN 103368577 B CN103368577 B CN 103368577B CN 201310120172 A CN201310120172 A CN 201310120172A CN 103368577 B CN103368577 B CN 103368577B
- Authority
- CN
- China
- Prior art keywords
- circuit
- difference
- mems sensor
- mems
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/04—Differential modulation with several bits, e.g. differential pulse code modulation [DPCM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
- G01P21/02—Testing or calibrating of apparatus or devices covered by the preceding groups of speedometers
- G01P21/025—Testing or calibrating of apparatus or devices covered by the preceding groups of speedometers for measuring speed of fluids; for measuring speed of bodies relative to fluids
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/30—Delta-sigma modulation
- H03M3/322—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M3/324—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement
- H03M3/344—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement by filtering other than the noise-shaping inherent to delta-sigma modulators, e.g. anti-aliasing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710561498.2A CN107508601B (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261620019P | 2012-04-04 | 2012-04-04 | |
US61/620,019 | 2012-04-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710561498.2A Division CN107508601B (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103368577A CN103368577A (zh) | 2013-10-23 |
CN103368577B true CN103368577B (zh) | 2017-08-08 |
Family
ID=49369232
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310120172.8A Active CN103368577B (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 |
CN2013201717578U Expired - Lifetime CN203261317U (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的电子电路 |
CN201710561498.2A Active CN107508601B (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201717578U Expired - Lifetime CN203261317U (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的电子电路 |
CN201710561498.2A Active CN107508601B (zh) | 2012-04-04 | 2013-04-08 | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102045784B1 (zh) |
CN (3) | CN103368577B (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
KR102045784B1 (ko) * | 2012-04-04 | 2019-11-18 | 페어차일드 세미컨덕터 코포레이션 | 병합된 미세 전자기계 가속도계 센서에 대한 초핑을 이용하는 노이즈 감소 방법 |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
US9835647B2 (en) | 2014-03-18 | 2017-12-05 | Fairchild Semiconductor Corporation | Apparatus and method for extending analog front end sense range of a high-Q MEMS sensor |
CN104535796A (zh) * | 2014-12-18 | 2015-04-22 | 清华大学 | 三电极微机械加速度计数字闭环控制电路及其接口电路以及三电极微机械加速度计*** |
US9897504B2 (en) * | 2015-04-20 | 2018-02-20 | Infineon Technologies Ag | System and method for a MEMS sensor |
KR101874173B1 (ko) * | 2015-04-20 | 2018-07-03 | 인피니언 테크놀로지스 아게 | Mems 센서를 위한 시스템 및 방법 |
US9976924B2 (en) | 2015-04-20 | 2018-05-22 | Infineon Technologies Ag | System and method for a MEMS sensor |
US20170003315A1 (en) * | 2015-06-30 | 2017-01-05 | Freescale Semiconductor, Inc. | Mems sensor devices having a self-test mode |
CN105915219B (zh) * | 2016-04-08 | 2019-07-12 | 中国科学院微电子研究所 | 一种模数转换电路 |
DE102016109118A1 (de) * | 2016-05-18 | 2017-11-23 | Infineon Technologies Ag | Schaltkreisarchitektur für eine Messanordnung, einen Pegelwandler-Schaltkreis, eine Ladungspumpstufe und eine Ladungspumpe sowie Verfahren zum Betreiben dieser |
CN106452448A (zh) * | 2016-10-20 | 2017-02-22 | 湘潭芯力特电子科技有限公司 | 一种带斩波的开关电容积分器 |
DE102017209096A1 (de) * | 2017-05-31 | 2018-12-06 | Robert Bosch Gmbh | Auswerteschaltung für einen kapazitive Beschleunigungssensor und Vorrichtung zur Detektion einer Beschleunigung |
CN109813341B (zh) * | 2019-02-26 | 2023-10-31 | 南京理工大学 | 一种硅微机械陀螺驱动力耦合误差在线自校准*** |
CN112564711B (zh) * | 2021-02-20 | 2021-06-01 | 坤元微电子(南京)有限公司 | 一种连续时间斩波Delta Sigma调制器 |
CN117805437B (zh) * | 2024-02-29 | 2024-05-28 | 华中科技大学 | 一种交直混合降低读出电路1/f噪声的静电加速度计 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101044684A (zh) * | 2004-09-17 | 2007-09-26 | 模拟装置公司 | 使用斩波稳定的多位连续时间前端∑-△adc |
CN101213461A (zh) * | 2005-06-03 | 2008-07-02 | 辛纳普蒂克斯公司 | 使用sigma-delta测量技术检测电容的方法和*** |
CN102332894A (zh) * | 2010-06-10 | 2012-01-25 | 阿尔卑斯电气株式会社 | 数字滤波器 |
CN203261317U (zh) * | 2012-04-04 | 2013-10-30 | 快捷半导体(苏州)有限公司 | 基于对合并式mems加速计传感器斩波的电子电路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2790095B1 (fr) * | 1999-02-18 | 2001-04-06 | Siemens Automotive Sa | Dispositif de mesure de courant et procede correspondant |
JP2000329786A (ja) * | 1999-05-24 | 2000-11-30 | Hokuriku Electric Ind Co Ltd | 圧電型加速度センサを備えた加速度検出装置 |
US6556345B1 (en) * | 2001-06-21 | 2003-04-29 | Onetta, Inc. | Optical network equipment with control and data paths |
US6975258B2 (en) * | 2003-01-23 | 2005-12-13 | Corporation For National Research Initiatives | Circuit for direct digital delta-sigma conversion of variable electrical capacitance |
GB0411884D0 (en) * | 2004-05-28 | 2004-06-30 | Koninkl Philips Electronics Nv | Bitstream controlled reference signal generation for a sigma-delta modulator |
EP1894025A1 (en) * | 2005-06-03 | 2008-03-05 | Synaptics Incorporated | Methods and systems for detecting a capacitance using sigma-delta measurement techniques |
US7538705B2 (en) * | 2006-07-25 | 2009-05-26 | Microchip Technology Incorporated | Offset cancellation and reduced source induced 1/f noise of voltage reference by using bit stream from over-sampling analog-to-digital converter |
EP2074381B1 (en) * | 2006-09-28 | 2010-05-12 | Medtronic, Inc. | Capacitive interface circuit for low power sensor system |
JP2008157917A (ja) * | 2006-11-28 | 2008-07-10 | Toshiba Corp | 容量差検出回路 |
CN101832788A (zh) * | 2009-03-11 | 2010-09-15 | 中国科学院电子学研究所 | 一种采用斩波稳定技术的电容连续时间读出电路 |
US8031094B2 (en) * | 2009-09-11 | 2011-10-04 | Apple Inc. | Touch controller with improved analog front end |
-
2013
- 2013-04-03 KR KR1020130036311A patent/KR102045784B1/ko active IP Right Grant
- 2013-04-08 CN CN201310120172.8A patent/CN103368577B/zh active Active
- 2013-04-08 CN CN2013201717578U patent/CN203261317U/zh not_active Expired - Lifetime
- 2013-04-08 CN CN201710561498.2A patent/CN107508601B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101044684A (zh) * | 2004-09-17 | 2007-09-26 | 模拟装置公司 | 使用斩波稳定的多位连续时间前端∑-△adc |
CN101213461A (zh) * | 2005-06-03 | 2008-07-02 | 辛纳普蒂克斯公司 | 使用sigma-delta测量技术检测电容的方法和*** |
CN102332894A (zh) * | 2010-06-10 | 2012-01-25 | 阿尔卑斯电气株式会社 | 数字滤波器 |
CN203261317U (zh) * | 2012-04-04 | 2013-10-30 | 快捷半导体(苏州)有限公司 | 基于对合并式mems加速计传感器斩波的电子电路 |
Also Published As
Publication number | Publication date |
---|---|
KR20130112792A (ko) | 2013-10-14 |
CN107508601A (zh) | 2017-12-22 |
CN107508601B (zh) | 2021-12-28 |
KR102045784B1 (ko) | 2019-11-18 |
CN103368577A (zh) | 2013-10-23 |
CN203261317U (zh) | 2013-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103368577B (zh) | 基于对合并式mems加速计传感器斩波的降噪方法及电子电路 | |
EP2647593B1 (en) | Noise reduction method for mems sensors using chopping circuits | |
EP3379271B1 (en) | Capacitance detection apparatus, electronic device and force detection apparatus | |
JP4805798B2 (ja) | 特にマイクロ電気機械形式の容量センサを読み取るための装置及び方法 | |
CN203275442U (zh) | 传感器电路 | |
CN203011387U (zh) | 微机电设备和电子*** | |
Dong et al. | A high-performance accelerometer with a fifth-order sigma–delta modulator | |
CN107278285A (zh) | 压力检测方法及其装置以及电子终端 | |
JP2016070815A (ja) | 加速度センサ | |
CN103837163A (zh) | 电容感测电路 | |
JP2014530351A (ja) | 慣性センサの電磁干渉に対するロバスト性を得るためのスキーム | |
Chen et al. | Parameter optimization for a high-order band-pass continuous-time sigma-delta modulator MEMS gyroscope using a genetic algorithm approach | |
Zhong et al. | Capacitive touch panel with low sensitivity to water drop employing mutual-coupling electrical field shaping technique | |
JP7075849B2 (ja) | Mems静電容量型加速度センサ | |
Almutairi et al. | Multi stage noise shaping sigma–delta modulator (MASH) for capacitive MEMS accelerometers | |
US11307218B2 (en) | Real-time isolation of self-test and linear acceleration signals | |
CN113639734B (zh) | Mems电容式陀螺仪的数字馈通取消*** | |
US11726107B2 (en) | Inertial sensor sampling with combined sense axes | |
JP5811176B2 (ja) | 物理量センサおよび物理量の検出方法 | |
JP2014174164A (ja) | 高度の電磁干渉除去を伴う擬似差動加速度計 | |
JP5977113B2 (ja) | タッチセンサの静電容量検出回路 | |
Lanniel et al. | Tackling sdm feedback coefficient modulation in area optimized frontend readout circuit for high performance mems accelerometers | |
Parthasarathy | Energy harvesting wheel speed sensor | |
CN203890050U (zh) | 微机电***及检测电路 | |
JP2008026177A (ja) | 容量型検出回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180530 Address after: Arizona, USA Patentee after: Fairchild Semiconductor Corp. Address before: 215021 Su Tung Road, Suzhou Industrial Park, Jiangsu Province, No. 1 Co-patentee before: Fairchild Semiconductor Corp. Patentee before: Fairchild Semiconductor (Suzhou) Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190729 Address after: Floor 1, Building 2, 235 Chengbei Road, Jiading District, Shanghai Patentee after: Shanghai Xirui Technology Co., Ltd. Address before: Arizona, USA Patentee before: Fairchild Semiconductor Corp. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Patentee before: Shanghai Silicon Technology Co.,Ltd. |
|
CP03 | Change of name, title or address |