CN103367263A - 一种改进的大功率半导体模块的注塑封装结构及封装方法 - Google Patents

一种改进的大功率半导体模块的注塑封装结构及封装方法 Download PDF

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CN103367263A
CN103367263A CN2013103077250A CN201310307725A CN103367263A CN 103367263 A CN103367263 A CN 103367263A CN 2013103077250 A CN2013103077250 A CN 2013103077250A CN 201310307725 A CN201310307725 A CN 201310307725A CN 103367263 A CN103367263 A CN 103367263A
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沈首良
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Abstract

本发明公开了属于半导体器件制造的封装技术范围的一种改进的大功率半导体模块的注塑封装结构及封装方法。在金属底板上焊接陶瓷绝缘片，在陶瓷绝缘片上面间隔焊接公用电极和二号芯片阳极引出，在公用电极上连接一号半导体芯片和一号芯片阴极过桥，一号芯片阴极引出从一号芯片阴极过桥上引出；二号半导体芯片焊接在二号芯片阳极引出电极上，焊在二号半导体芯片顶面上的阴极过桥与公用电极相连。本发明改进了模块塑料外壳封装结构和封装工艺，上注塑机一次注塑成型，并且一次可同时注塑多块，从而使半导体模块厚度减薄到三分之一左右，减轻了模块的重量，提高了模块的密闭性，提高了模块的封装速度，大大提高模块的可靠性和生产效率。

Description

一种改进的大功率半导体模块的注塑封装结构及封装方法
技术领域
本发明属于半导体器件制造的封装技术范围，特别涉及一种改进的大功率半导体模块的注塑封装结构及封装方法。
背景技术
传统的大功率半导体模块的封装结构如图1所示，在金属底板2上放置陶瓷绝缘片3，在陶瓷绝缘片3上面间隔焊接公用电极7和二号芯片阳极引出电极10，在公用电极7上放置一号半导体芯片4和在二号芯片阳极引出电极10上放置二号半导体芯片9，门阴极引出端子11经过塑封支撑15后从模块塑料上盖14引出，模块塑料上盖14中预埋三个电极外接螺母13，三个电极从上盖14引出后打弯，压在预埋螺母13上，由此可以看出半导体模块的封装结构形状复杂，使大功率半导体模块的厚度达到28mm以上；并且在盖上盖以前在模块空隙灌有硅凝胶及环氧树脂，两次灌封时间很长，需1-2天时间，还要进行高温固化；采用外壳式封装，给模块封装带来比较大的麻烦，由于组装的要求，厚度受到限制，很难减薄。
发明内容
本发明的目的是提出一种改进的大功率半导体模块的注塑封装结构及封装方法，其特征在于，在金属底板2上焊接陶瓷绝缘片3，在陶瓷绝缘片3上面间隔焊接公用电极7和二号芯片阳极引出电极10，在公用电极7上连接一号半导体芯片4和一号芯片阴极过桥6，一号芯片阴极引出5从一号芯片阴极过桥6上引出；二号半导体芯片9焊接在二号芯片阳极引出电极10上，焊在二号半导体芯片9顶面上的二号芯片阴极过桥8与公用电极7相连，所述两个阴极过桥将两个半导体芯片连接在一起，门阴极引出端子11经过塑封后固定在塑料外壳上，焊接在二号半导体芯片或一号半导体芯片顶面的门极和阴极内部引出线12由门阴极引出端子11从塑料外壳1顶面伸出。 
所述公用电极7、一号芯片阴极引出5和二号芯片阳极引出10均从塑料外壳1顶面伸出。
所述半导体模块的厚度为10~12mm或更薄。
一种改进的大功率半导体模块的注塑封装的封装方法，其特征在于，具体步骤如下：
1）在金属底板上焊接陶瓷绝缘片，在陶瓷绝缘片上按照大功率半导体模块的组成结构组装成裸芯，
2)在裸芯上涂敷或灌封上电子硅凝胶保护，厚度为0.5~1mm， 
3)上注塑机一次注塑封装,注塑材料为pps, 阻燃温度为260℃，注塑温度为320℃，压力为80kg。
本发明的有益效果是改进了模块塑料外壳结构，上注塑机一次注塑成型，从而使半导体模块厚度减薄到三分之一左右，提高模块的密闭性，大大提高模块的可靠性和生产效率。
附图说明
图1为传统的大功率半导体模块的封装结构示意图。
图2改进的大功率半导体模块的封装结构示意图。
具体实施方式
本发明提出一种改进的大功率半导体模块的注塑封装结构及封装方法，下面结合附图予以说明。
图2所示为改进的大功率半导体模块的封装结构示意图。图中，在金属底板2上焊接陶瓷绝缘片3，在陶瓷绝缘片3上面间隔焊接公用电极7和二号芯片阳极引出电极10，在公用电极7上连接一号半导体芯片4和一号芯片阴极过桥6，一号芯片阴极引出5从一号芯片阴极过桥6上引出；二号半导体芯片9焊接在二号芯片阳极引出电极10上，焊在二号半导体芯片9顶面上的阴极过桥8与公用电极7相连，所述两个阴极过桥将两个半导体芯片连接在一起，门阴极引出端子11经过塑封后固定在模块上，焊接在二号半导体芯片9或一号半导体芯片4顶面的门极和阴极内部引出线12由门阴极引出端子11从模块塑料外壳1顶面伸出。所述公用电极7、一号芯片阴极引出5和二号芯片阳极引出10均从模块塑料外壳1顶面伸出。
所述改进的大功率半导体模块的注塑封装的具体步骤如下：
1）在金属底板上焊接陶瓷绝缘片，在陶瓷绝缘片上按照上述大功率半导体模块的组成结构组装成裸芯；
2)在裸芯上涂敷或灌封上电子硅凝胶保护，厚度为0.5~1mm；
3)上注塑机一次注塑封装,注塑材料为pps, 阻燃温度为260℃，注塑温度为320℃，压力为80kg。
本发明采用该改进的结构，可以使半导体模块的厚度减薄到10mm左右，并且提高模块的密闭性，大大提高模块的可靠性和生产效率。
上述电子硅凝胶属加成型液体硅橡胶体系，它从液体硅橡胶过渡到硅凝胶是通过基础聚合物分子中乙烯基（或烯丙基）与交联剂的分子中的硅氨基CSi-H在铂催化剂的存在下发生氢硅加成反应而成；具有好的绝缘性和粘接性，使其广泛应用于光学仪器、照明产品、晶体管及集成电路的涂敷及灌封。电子硅凝胶的特点如下：
1、硅凝胶是具有加成型液体硅橡胶的耐高温和耐低温性能，耐高温210℃，耐低温-80～-55℃；
2、硫化时没有副产物，收缩率低，无味、无毒、无腐蚀、具有生理惰性，使用时安全可靠；
3、交联密度低，柔软，弹性率低，承受负荷力不强，可缓冲膨胀应力，防震效果显著；
4、具有优良的耐候，耐水，防潮，防污性能和高的透明性及透光率，适用于对电子元器件，光学品质，LED组件进行灌封保护，
5、低粘度，流动性好，适用于填充精密构件的微细部件。 

Claims (4)

1.一种改进的大功率半导体模块的注塑封装结构，其特征在于，在金属底板（2）上焊接陶瓷绝缘片（3），在陶瓷绝缘片（3）上面间隔焊接公用电极（7）和二号芯片阳极引出电极（10），在公用电极（7）上连接一号半导体芯片（4）和一号芯片阴极过桥（6），一号芯片阴极引出（5）从一号芯片阴极过桥（6）上引出；二号半导体芯片（9）焊接在二号芯片阳极引出电极（10）上，焊在二号半导体芯片（9）顶面上的二号芯片阴极过桥（8）与公用电极（7）相连，所述两个阴极过桥将两个半导体芯片连接在一起，门阴极引出端子（11）经过塑封后固定在塑料外壳上，焊接在二号半导体芯片或一号半导体芯片顶面的门极和阴极内部引出线（12）由门阴极引出端子（11）从塑料外壳（1）顶面伸出。
2.根据权利要求1所述改进的大功率半导体模块的注塑封装结构，其特征在于，所述公用电极（7）、一号芯片阴极引出（5）和二号芯片阳极引出（10）均从塑料外壳（1）顶面伸出。
3.根据权利要求1所述改进的大功率半导体模块的注塑封装结构，其特征在于，所述半导体模块的厚度为10~12mm或更薄。
4.一种改进的大功率半导体模块的注塑封装的封装方法，其特征在于，具体步骤如下：
1）在金属底板上焊接陶瓷绝缘片，在陶瓷绝缘片上按照大功率半导体模块的组成结构组装成裸芯，
2）在裸芯上涂敷或灌封电子硅凝胶保护，厚度为0.5~1mm， 
3）上注塑机一次注塑封装,注塑材料为高导热pps，阻燃温度为260℃，注塑温度为320℃，压力为80kg，
4）公用电极（7）、一号芯片阴极引出（5）、二号芯片阳极引出（10）和门阴极引出端子（11）均从塑料外壳（1）顶面伸出。 
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CN106601701A (zh) * 2017-01-19 2017-04-26 贵州煜立电子科技有限公司 大功率二端表面引出脚电子元器件立体封装方法及结构

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CN102064158A (zh) * 2010-11-04 2011-05-18 嘉兴斯达微电子有限公司 一种紧凑型功率模块
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Publication number Priority date Publication date Assignee Title
CN1219767A (zh) * 1997-12-08 1999-06-16 东芝株式会社 半导体功率器件的封装及其组装方法
CN102064158A (zh) * 2010-11-04 2011-05-18 嘉兴斯达微电子有限公司 一种紧凑型功率模块
CN102201396A (zh) * 2011-05-31 2011-09-28 常州瑞华电力电子器件有限公司 一种大规格igbt模块及其封装方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601701A (zh) * 2017-01-19 2017-04-26 贵州煜立电子科技有限公司 大功率二端表面引出脚电子元器件立体封装方法及结构
CN106601701B (zh) * 2017-01-19 2023-03-28 贵州煜立电子科技有限公司 大功率二端表面引出脚电子元器件立体封装方法及结构

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