CN103364401B - A kind of test system for extreme ultraviolet radiation material - Google Patents
A kind of test system for extreme ultraviolet radiation material Download PDFInfo
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- CN103364401B CN103364401B CN201310319441.3A CN201310319441A CN103364401B CN 103364401 B CN103364401 B CN 103364401B CN 201310319441 A CN201310319441 A CN 201310319441A CN 103364401 B CN103364401 B CN 103364401B
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Abstract
The invention discloses a kind of test system for extreme ultraviolet radiation material, EUV light source room is for holding EUV light source, and EUV light source is used for giving off the nearly grenz ray of wide range; Filter plate room is for placing filter plate, and filter plate is used near for wide range grenz ray to be filtered into narrow spectrum EUV irradiation; Collecting mirror cell for placing collection mirror, collecting mirror and being used for EUV irradiation to converge in sample chamber; Spectral detection room is for installing a catoptron and a spectrometer, and catoptron is used for reflexing to spectro-metre by from the EUV irradiation collecting mirror cell; Sample chamber for holding sample, CCD and the energy meter that will test, and can make sample, CCD and energy meter move to the same position that can accept EUV irradiation in turn.The present invention can obtain the extreme ultraviolet irradiation damage situation of different sample.
Description
Technical field
The invention belongs to the technical field of measurement and test of material property, be specifically related to extreme ultraviolet (EUV) exposed material test macro, for the EUV irradiation damage of test material.
Background technology
Extreme ultraviolet (Extreme ultraviolet, being abbreviated as EUV) photoetching technique is Next Generation Lithographies machine technology after 193nm immersion lithography, because extreme ultraviolet radiation is by nearly all material (comprising air) strong absorption, therefore EUV lithography machine system must be placed in vacuum environment.The each critical component of EUV lithography machine internal system material used need guarantee, under EUV irradiation and vacuum environment, not have the Detrimental characteristics of EUV irradiation damage.And some material can produce irradiation damage corrosion under EUV effect of irradiation.
In order to instruct the material and progress in EUV lithography machine complete machine and Subsystem Design process to select, guaranteeing the reliability and the requirement in serviceable life that reach EUV lithography machine, needing research EUV exposed material test macro, carrying out EUV irradiation damage testing experiment.
Test system for extreme ultraviolet radiation material is mainly used in studying under the EUV irradiation and vacuum condition of simulation EUV lithography machine environment, the degree of impairment of different materials.By observing the associated change of material surface microstructure after EUV effect of irradiation, bond material feature measurement, to the changes of physical and chemical properties of material with assess serviceable life.
The typical test system for extreme ultraviolet radiation material of existing one is (list of references: Frank Barkusky as shown in Figure 1, Armin Bayer, Christian Peth, Klaus Mann.Direct structuringof solids by EUV radiation from a table-top laser produced plasma source.SPIE, 2009, 7361:73610D-1 ~ 73610D-14), by Nd:YAG laser instrument (wavelength 1064nm, pulse energy 700mJ, pulsewidth 8.8ns) focus on the rear gold target generation EUV irradiation impacted in Xe compression ring border, by Schwarzschild catoptron, EUV irradiation is converged on sample after filtering.Exist in such structural arrangement mode and organize catoptron more, the hot spot characteristic on sample and irradiation energy are calculated by reflection indirectly to obtain, and there is certain measuring error.In addition, many groups catoptron of existence can decay final irradiation to the EUV irradiation energy on sample.
Summary of the invention
(1) technical matters that will solve
Technical matters to be solved by this invention proposes a kind of test system for extreme ultraviolet radiation material, it can while providing EUV irradiation, EUV light spot characteristic on direct measurement sample face and EUV irradiation energy, make the extreme ultraviolet irradiation damage data that obtain more accurate.
(2) technical scheme
The present invention proposes a kind of test system for extreme ultraviolet radiation material, and comprise EUV light source room, filter plate room, collect mirror cell, spectral detection room and sample chamber, wherein said EUV light source room is for holding EUV light source, and this EUV light source is used for giving off the nearly grenz ray of wide range; Described filter plate room is for placing filter plate, and this filter plate is used near for described wide range grenz ray to be filtered into narrow spectrum EUV irradiation; Described collection mirror cell is for placing collection mirror, and this collection mirror is used for described EUV irradiation to converge in described sample chamber; Described spectral detection room is for installing a catoptron and a spectrometer, and described catoptron is used for reflexing to described spectro-metre by from the EUV irradiation collecting mirror cell; Described sample chamber for holding sample, CCD and the energy meter that will test, and can make sample, CCD and energy meter move to the same position that can accept EUV irradiation in turn.
According to a kind of embodiment of the present invention, system also comprises transfer chamber, and it for connecting described spectral detection room and described sample chamber, and is introduced the EUV irradiation from described spectral detection room in described sample chamber.
According to a kind of embodiment of the present invention, vacuum shutter is installed in described transfer chamber, to control the umber of exposures of described EUV irradiation on sample and exposure time.
According to a kind of embodiment of the present invention, before or after described filter plate room is placed on described collection mirror cell.
According to a kind of embodiment of the present invention, be also provided with one dimension translation stage and a support in described spectral detection room, this support installing is on this one dimension translation stage, and described catoptron is installed on this support.
According to a kind of embodiment of the present invention, the computation process of the energy of this test system for extreme ultraviolet radiation material is: P
s=P × (1-cos θ) × T
zr× R
m, wherein, P
sfor irradiation is to the energy of described sample surfaces, P is the power of described EUV light source in 2 π solid angles, and θ is the collection half-angle of described collection mirror, T
zrfor the transmitance of described filter plate, R
mfor the reflectivity of described collection mirror.
According to a kind of embodiment of the present invention, have a D translation platform in described sample chamber, it is for installing described sample, CCD and energy meter.
According to a kind of embodiment of the present invention, described D translation platform is formed by connecting by holder combination by three one dimension translation stages.
According to a kind of embodiment of the present invention, described D translation platform comprises X-axis translation stage, Y-axis translation stage, Z axis translation stage, X-Z bracing strut and sample platform bracket, wherein said X-axis translation stage is arranged on the nut of described Y-axis translation stage, the nut of this X-axis translation stage is installed described X-Z bracing strut, described Z axis translation stage installed by this X-Z bracing strut, the nut of this Z axis translation stage is provided with described sample platform bracket, this sample platform bracket fixes described sample, CCD and energy meter respectively.
According to a kind of embodiment of the present invention, the sensitive plane of the detector of described CCD, energy meter and the test surfaces of described sample keep in one plane, and this plane need be vertical with the primary optical axis of incoming flow EUV irradiation.
(3) beneficial effect
The present invention can provide extreme ultraviolet irradiation and directly can measure the characteristic such as spectral distribution, spot size, irradiation energy of sample place extreme ultraviolet irradiation, by the change of material surface microstructure after predose, obtains the extreme ultraviolet irradiation damage situation of different sample.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing a kind of typical test system for extreme ultraviolet radiation material;
Fig. 2 is the structural representation of an embodiment of test system for extreme ultraviolet radiation material of the present invention;
Fig. 3 shows the mounting structure of the catoptron of an embodiment of test system for extreme ultraviolet radiation material of the present invention;
Fig. 4 shows in the sample chamber of an embodiment of test system for extreme ultraviolet radiation material of the present invention and moves the structure of installing sample by D translation.
Embodiment
The present invention proposes a kind of test system for extreme ultraviolet radiation material, it can provide extreme ultraviolet irradiation and can detect the characteristic such as spectral distribution, spot size, irradiation energy density of extreme ultraviolet irradiation, by the change of material surface microstructure after predose, obtain the extreme ultraviolet irradiation damage situation of different sample.In addition, the present invention also proposes the irradiation energy computation process for this test system for extreme ultraviolet radiation material.
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 2 is the structural representation of an embodiment of test system for extreme ultraviolet radiation material of the present invention.As shown in Figure 2, it comprises EUV light source room 1, filter plate room 2, collects mirror cell 3, spectral detection room 4, transfer chamber 5 and sample chamber 6.Each chamber preferably adopts modular design, is connected by standard flange interface, facilitates mounting or dismounting and debugging between each element.
Described EUV light source room 1 is for holding EUV light source 11, and EUV light source 11 can be LPP (Laser Produced Plasma) light source or DPP (Discharge Produced Plasma) light source.EUV light source 11 produces plasma, gives off the nearly grenz ray of wide range, and in larger space, produce debris contamination thing (particularly DPP light source); EUV light source 11 is preferably inside debris collector, chip can be retrained the further diffusion controlling chip through while the nearly grenz ray of wide range.
Described filter plate room 2 is for placing filter plate (not shown).Described filter plate can be made up of the support nickel screen of the zirconium lattice of hundreds of nano thickness and tens micron thickness, near for wide range grenz ray can be filtered into narrow spectrum EUV irradiation.
Mirror 31 is collected for placing by described collection mirror cell 3.Collect mirror 31 and be arranged on the inwall collecting Room, mirror cell 3 by mounting bracket (not shown); Mounting bracket can manually or motorized adjustment collect the assembling position of mirror 31 and collection angle.Collect mirror 31 and can be catoptron, for the EUV dispersed irradiation is converged to D translation platform 61 in sample chamber 6.Collecting mirror 31 can be ellipsoidal mirror or anchor ring/toroidal mirror: when it is ellipsoidal mirror, and in EUV light source 11 plasma place and sample chamber, sample irradiation point place is two focuses of ellipsoid.In this embodiment, as shown in Figure 2, penetrate downwards by the beam orthogonal after collection mirror and keep good beam characteristics.
According to the present invention, before filter plate room 2 can be placed on and collect mirror cell 3 or after collecting mirror cell 3.Here " front " and " afterwards " respectively the working direction of irradiation that sends of corresponding EUV light source 11 by optical element " elder generation " and " afterwards ".When filter plate room 2 be positioned at collect before mirror cell 3 time, as shown in Figure 2, its with EUV light source room 1 with collect mirror 31 and be all coupled.Time after filter plate room 2 is positioned at collection mirror cell 3, it is coupled to collects between mirror cell 3 and spectral detection room 4.No matter filter plate room 2 and EUV light source room 1 and collect mirror 31 and be coupled, or be coupled with collection mirror cell 3 and spectral detection room 4, the spectrum recorded by spectral detection room 4 be all by filter plate room 2 filtering after spectrum, and can think that the spectral characteristic recorded is the spectral characteristic of irradiation on material sample.In addition, if light path is shifted out in filter plate room 2, or filter plate room 2 is coupled between spectral detection room 4 and transfer chamber 5, or filter plate room 2 is coupled between transfer chamber 5 and sample chamber 6, the spectrum recorded by spectral detection room 4 be filtering before spectrum; By the spectral characteristic before and after contrast filtering, the filtering performance of filter plate in filter plate room 2 can be assessed.
Described spectral detection room 4 is for installing a catoptron 41 and a spectrometer 42, and catoptron 41 is for reflexing to spectro-metre by from the EUV irradiation collecting mirror cell 3.For Rowland circle grating spectrograph, spectrometer vacuum chamber is connected with collection mirror cell 3 by slit by described spectrometer; The EUV exposed portion reflected back through catoptron 41 by slit, then the grating beam splitting in spectrometer, is incident upon on Rowland circle by wavelength coverage respectively by light beam; Detector moves on that track according to the track of Rowland circle radial design Rowland circle one, detects the intensity level of different wave length thus, thus obtains spectral distribution property.
Fig. 3 shows the mounting structure of the catoptron in this embodiment.As shown in Figure 3, one dimension translation stage 44 installs a support 43, support 43 is threaded connection, the mode mounting plane catoptron 41 such as viscose glue connection.Spectrometer 42 can be entered into after plane mirror reflection, because the spectrometer of measure spectrum did not need multiple beam, so mirror reflection surface can be reduced, only segment beam is reflected into spectrometer by collecting the convergence EUV light bundle behind mirror cell 4.One dimension translation stage 44 can be ball screw type translation stage, drives screw turns by motor, thus drives the nut translation being provided with support 43; Because demand fulfillment vacuum work condition and consideration grease are to the strong absorption of EUV irradiation, motor used is without oily ceramic motor; Motor can at the outer remote pilot of chamber, or is connected on chamber by vacuum plug and outside chamber, has line traffic control again.This test system for extreme ultraviolet radiation material can not on-line testing spectral characteristic, not test spectral when carrying out material irradiation test, and this translation stage 44 drives support 43 and catoptron 41 to deviate from EUV exposure beam light path is not stopped by device; When needs test spectral, catoptron is connected into light path by this translation stage 44 mobile, and reflection EUV irradiation is in the interface slit of spectrometer 42.The spectral characteristic that such off-line records just can think the spectral characteristic of irradiation on material sample.
Transfer chamber 5 for connecting spectral detection room 4 and sample chamber 6, and introduces the EUV irradiation from spectral detection room 4 in sample chamber 6.In transfer chamber 5, vacuum shutter can be installed, with the umber of exposures of control EUV irradiation on sample and exposure time.
Sample chamber 6 for holding sample S, the CCD616 and energy meter 617 that will test, and can make sample S, CCD616 and energy meter 617 move to the same position that can accept EUV irradiation in turn.
CCD616 is for measuring the hot spot characteristic of EUV irradiation.Energy meter 617 is for measuring the energy of EUV irradiation.Thus, switched by position, CCD616 can be switched to the position identical with the sample accepting EUV irradiation respectively with energy meter 617, thus the hot spot characteristic of the EUV irradiation that CCD616 is measured is identical with irradiation energy with the hot spot characteristic of irradiation on material sample S with the EUV irradiation energy measured by energy meter 617.
In order to realize the switching between position adjustment and above-mentioned three elements, in sample chamber 6, D translation platform 61 can be installed, it for settling and mobile example S, CCD616 and energy meter 617 on three-dimensional, and ensures that mobile example S, CCD616 and energy meter 617 can be switched to the same position accepting EUV irradiation.
Fig. 4 shows in the sample chamber 6 of this embodiment and installs sample S, CCD616 and energy meter 617 by D translation platform 61.As shown in Figure 4, this D translation platform 61 is formed by connecting by holder combination by three one dimension translation stages.One dimension translation stage can be ball screw type translation stage, drives screw turns by motor, thus drives nut translation.
Because demand fulfillment vacuum work condition and consideration grease are to the strong absorption of EUV irradiation, motor used is without oily ceramic motor; Motor can at the outer remote pilot of chamber, or is connected on chamber by vacuum plug and outside chamber, has line traffic control again.
A kind of array mode of described D translation platform is: X-axis translation stage 611 is arranged on the nut of Y-axis translation stage 612, the nut of X-axis translation stage is provided with X-Z bracing strut 614, X-Z bracing strut 614 is provided with Z axis translation stage 613, the nut of Z axis translation stage 613 is provided with sample platform bracket 615, difference fixed sample S, CCD616 and energy meter 617 on sample platform bracket 615.
Need guarantee three mutual at right angle settings of one dimension translation stage when mounted; The sensitive plane of the detector of CCD616, energy meter 617 and the test surfaces of sample S keep in one plane, and this plane need be vertical with the primary optical axis of incoming flow EUV irradiation.Like this, can think that the hot spot characteristic of the EUV irradiation measured by CCD616 and the energy of EUV irradiation measured by energy meter 617 are exactly the hot spot characteristic of irradiation on material sample and irradiation energy.
Spot size and the energy of EUV irradiation is detected by moving three dimension translation stage 61, concrete mode is: by the irradiation spot size (use CCD detection) regulating vertical direction displacement to regulate sample plane, thus corresponding different EUV irradiation energy density (energy measured by energy meter/by the facula area of CCD detection); Irradiation test points different on CCD, energy meter and sample is substituted by regulating two displacements in surface level.
The energy balane process of the test system for extreme ultraviolet radiation material of this embodiment is:
P
s＝P
a×T
zr×R
m，P
a＝P×(1-cosθ)，
I.e. P
s=P × (1-cos θ) × T
zr× R
m.
Wherein, P
sfor irradiation is to the energy on material sample surface, P
afor the power entered within the scope of the collection angle collecting mirror that EUV light source 11 sends, P is the power of EUV light source 11 in 2 π solid angles (2 π sr), and θ is the collection half-angle collecting mirror 31, T
zrfor the transmitance of filter plate, R
mfor collecting the reflectivity of mirror 31.
When there is debris collector EUV light source 11 inside and is filled with working gas in system, suppose that the transmitance of the debris collector of EUV light source is T
dM, in light path, the transmitance of working gas is T
p(such as with the DPP light source that Xe gas is working gas).
Then there is P
s=P
a× T
dM× T
zr× R
m× T
p=P × (1-cos θ) × T
dM× T
zr× R
m× T
p.
The present invention can test metal material (Al and Alalloy, Copper and its alloy, steel, invar etc.), nonmetallic materials (pottery, high molecular polymer etc.), optical material (optical thin film, optical substrate etc.), device (electronic component, cable, sensor) and other materials (as coating etc.).
Before carrying out irradiation test, first pass through optical microscope inspection and the surface condition of recording materials sample; Then, use test macro of the present invention, after different irradiation energy density and exposure time test, pass through optical microscope inspection again and the surface condition of recording materials sample; By the change of material surface microstructure before and after sample irradiation, obtain the extreme ultraviolet irradiation damage situation of different sample.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a test system for extreme ultraviolet radiation material, is characterized in that, comprises EUV light source room (1), filter plate room (2), collection mirror cell (3), spectral detection room (4) and sample chamber (6), wherein
Described EUV light source room (1) is for holding EUV light source (11), and this EUV light source (11) is for giving off the nearly grenz ray of wide range;
Described filter plate room (2) is for placing filter plate, and this filter plate is used near for described wide range grenz ray to be filtered into narrow spectrum EUV irradiation;
Described collection mirror cell (3) collects mirror (31) for placing, and this collection mirror (31) is for converging in described sample chamber (6) by described EUV irradiation;
Described spectral detection room (4) is for installing a catoptron (41) and a spectrometer (42), and described catoptron (41) is for reflexing to described spectrometer (42) by from the EUV irradiation collecting mirror cell (3);
Described sample chamber (6) for holding sample (S), CCD (616) and the energy meter (617) that will test, and can make sample (S), CCD (616) and energy meter (617) move to the same position that can accept EUV irradiation in turn;
The computation process of the energy of this test system for extreme ultraviolet radiation material is:
P
s＝P×(1-cosθ)×T
zr×R
m，
Wherein, P
sfor irradiation is to the energy on described sample (S) surface, P is the power of described EUV light source in 2 π solid angles, and θ is the collection half-angle of described collection mirror (31), T
zrfor the transmitance of described filter plate, R
mfor the reflectivity of described collection mirror (31).
2. test system for extreme ultraviolet radiation material as claimed in claim 1, it is characterized in that: also comprise transfer chamber (5), it is for connecting described spectral detection room (4) and described sample chamber (6), and the EUV irradiation from described spectral detection room (4) is introduced in described sample chamber (6).
3. test system for extreme ultraviolet radiation material as claimed in claim 2, is characterized in that: described transfer chamber is provided with vacuum shutter in (6), to control the umber of exposures of described EUV irradiation on sample (S) and exposure time.
4. test system for extreme ultraviolet radiation material as claimed any one in claims 1 to 3, is characterized in that: before or after described filter plate room (2) is placed on described collection mirror cell (3).
5. test system for extreme ultraviolet radiation material as claimed any one in claims 1 to 3, it is characterized in that, one dimension translation stage (44) and a support (43) are also installed in described spectral detection room (4), this support (43) is installed on this one dimension translation stage (44), and described catoptron (41) is installed on this support (43).
6. test system for extreme ultraviolet radiation material as claimed in claim 3, it is characterized in that: have a D translation platform (61) in described sample chamber (6), it is for installing described sample (S), CCD (616) and energy meter (617).
7. test system for extreme ultraviolet radiation material as claimed in claim 6, is characterized in that: described D translation platform (61) is formed by connecting by holder combination by three one dimension translation stages.
8. test system for extreme ultraviolet radiation material as claimed in claim 7, it is characterized in that: described D translation platform (61) comprises X-axis translation stage (611), Y-axis translation stage (612), Z axis translation stage (613), X-Z bracing strut (614) and sample platform bracket (615), wherein
Described X-axis translation stage (611) is arranged on the nut of described Y-axis translation stage (612), the nut of this X-axis translation stage is installed described X-Z bracing strut (614), this X-Z bracing strut (614) is upper installs described Z axis translation stage (613), the nut of this Z axis translation stage (613) is provided with described sample platform bracket (615), this sample platform bracket (615) is fixed respectively described sample (S), CCD (616) and energy meter (617).
9. test system for extreme ultraviolet radiation material as claimed in claim 8, it is characterized in that: the sensitive plane of the detector of described CCD (616), energy meter (617) and the test surfaces of described sample (S) keep in one plane, and this plane is vertical with the primary optical axis of described EUV irradiation.
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| CN104597115B (en) * | 2015-02-12 | 2019-03-19 | 中国科学院光电研究院 | The vacuum acquirement device and corresponding detection method of test system for extreme ultraviolet radiation material |
| CN104619104B (en) * | 2015-02-16 | 2017-03-01 | 哈尔滨工业大学 | Extreme ultraviolet origin system is used in the detection of Xe medium capillary discharging |
| CN105258925B (en) * | 2015-11-12 | 2018-01-02 | 中国科学院光电研究院 | A kind of measuring system of EUV light source performance parameter |
| CN105388102A (en) * | 2015-12-24 | 2016-03-09 | 同济大学 | Thin-film material extreme ultraviolet radiation damage experiment platform |
| CN108918094B (en) * | 2018-06-11 | 2021-03-26 | 同济大学 | Desktop type high energy density extreme ultraviolet irradiation damage testing arrangement |
| CN110895192B (en) * | 2019-11-25 | 2021-04-16 | 中国科学院微电子研究所 | Extreme ultraviolet optical element performance parameter test system |
| CN111504889A (en) * | 2020-04-23 | 2020-08-07 | 中国科学院微电子研究所 | Extreme ultraviolet cumulative irradiation damage test system and method |
| CN112432968B (en) * | 2020-10-21 | 2022-08-30 | 中国核动力研究设计院 | Preparation method of irradiated reactor structure material thermal conductivity test sample and test sample box |
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Effective date of registration: 20200814 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Research Institute of aerospace information innovation, Chinese Academy of Sciences Effective date of registration: 20200814 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Research Institute of aerospace information innovation, Chinese Academy of Sciences Address before: 100094, No. 9 Deng Nan Road, Beijing, Haidian District Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |