CN103364401A - Test system for extreme ultraviolet radiation material - Google Patents
Test system for extreme ultraviolet radiation material Download PDFInfo
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- CN103364401A CN103364401A CN2013103194413A CN201310319441A CN103364401A CN 103364401 A CN103364401 A CN 103364401A CN 2013103194413 A CN2013103194413 A CN 2013103194413A CN 201310319441 A CN201310319441 A CN 201310319441A CN 103364401 A CN103364401 A CN 103364401A
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Abstract
The invention discloses a test system for extreme ultraviolet radiation material. The system comprises a EUV light source chamber, which is used for accommodating a EUV light source which is used to give off wide spectrum near soft X-ray; a filter plate chamber, which is used for placing a filter plate which is used to filter the wide spectrum near soft X-ray to narrow spectrum EUV radiation; a collecting mirror chamber, which is used for placing a collecting mirror which is used for gathering the EUV radiations to a sample chamber; a spectrum detection chamber, which is used for installing a reflector and a spectrometer, wherein the reflector is used to reflect the EUV radiations from the collecting mirror chamber to the spectrometer; and a sample chamber, which is used for accommodating a sample to be tested, a CCD and an energy meter and can make the sample, the CCD and the energy meter move in turn to a same position where the sample, the CCD and the energy meter can be radiated by EUV radiation. The test system can obtain extreme ultraviolet radiation damage conditions of various samples.
Description
Technical field
The invention belongs to the technical field of measurement and test of material property, be specifically related to extreme ultraviolet (EUV) irradiation material testing system, be used for the EUV irradiation damage of test material.
Background technology
Extreme ultraviolet (Extreme ultraviolet, being abbreviated as EUV) photoetching technique is the photoetching machine technique of future generation after the 193nm immersion lithography, because extreme ultraviolet radiation is by nearly all material (comprising air) strong absorption, so the EUV Optical Coatings for Photolithography must place vacuum environment.The used material of inner each critical component of EUV Optical Coatings for Photolithography need guarantee under EUV irradiation and vacuum environment do not have harmful characteristic of EUV irradiation damage.And some material can produce the irradiation damage corrosion under the EUV effect of irradiation.
In order to instruct material and the process choice in EUV litho machine complete machine and the Subsystem Design process, guarantee to reach reliability and the requirement in serviceable life of EUV litho machine, need research EUV irradiation material testing system, carry out EUV irradiation damage testing experiment.
Extreme ultraviolet irradiation material testing system is mainly used in studying under the EUV irradiation and vacuum condition of simulation EUV litho machine environment, the degree of impairment of different materials.By observing the associated change of material surface microstructure behind the EUV effect of irradiation, the bond material feature measurement is to assessing in changes of physical and chemical properties and the serviceable life of material.
Existing a kind of typical extreme ultraviolet irradiation material testing system is (list of references: Frank Barkusky as shown in Figure 1, Armin Bayer, Christian Peth, Klaus Mann.Direct structuring of solids by EUV radiation from a table-top laser produced plasma source.SPIE, 2009,7361:73610D-1～73610D-14), by Nd:YAG laser instrument (wavelength 1064nm, pulse energy 700mJ, pulsewidth 8.8ns) gold target that impacts after the focusing in the Xe compression ring border produces EUV irradiation, by the Schwarzschild catoptron EUV irradiation is converged on the sample after filtering.Have many group catoptrons in such structural arrangement mode, the hot spot characteristic on the sample and irradiation energy are to calculate by reflection indirectly to obtain, and have certain measuring error.In addition, many groups of the existence catoptron EUV irradiation energy of final irradiation to the sample of decaying.
Summary of the invention
The technical matters that (one) will solve
Technical matters to be solved by this invention is to propose a kind of extreme ultraviolet irradiation material testing system, it can be when providing EUV irradiation, directly measure EUV hot spot characteristic and EUV irradiation energy on the sample face, make the extreme ultraviolet irradiation damage data that obtain more accurate.
(2) technical scheme
The present invention proposes a kind of extreme ultraviolet irradiation material testing system, comprises EUV light source chamber, filter plate chamber, collects mirror cell, spectral detection chamber and sample chamber, and wherein said EUV light source chamber is used for holding the EUV light source, and this EUV light source is used for giving off the nearly grenz ray of wide range; Described filter plate chamber is used for placing filter plate, and this filter plate is used for the nearly grenz ray of described wide range is filtered into narrow spectrum EUV irradiation; Described collection mirror cell is used for placing collects mirror, and this collection mirror is used for described EUV irradiation is converged to described sample chamber; Described spectral detection chamber is used for installing a catoptron and a spectrometer, and described catoptron is used for and will reflexes to described spectro-metre from the EUV irradiation of collecting the mirror cell; Described sample chamber is used for holding sample, CCD and the energy meter that will test, and can make sample, CCD and energy meter move in turn the same position that can accept EUV irradiation.
According to a kind of embodiment of the present invention, system also comprises the transfer chamber, and it is used for connecting described spectral detection chamber and described sample chamber, and introducing in the described sample chamber from the EUV irradiation of described spectral detection chamber.
According to a kind of embodiment of the present invention, the vacuum shutter is installed, to control umber of exposures and the exposure time of described EUV irradiation on sample in the described transfer chamber.
According to a kind of embodiment of the present invention, described filter plate chamber is placed on before or after the described collection mirror cell.
According to a kind of embodiment of the present invention, one dimension translation stage and a support also are installed in the described spectral detection chamber, this support is installed on this one dimension translation stage, and described catoptron is installed on this support.
According to a kind of embodiment of the present invention, the computation process of the energy of this extreme ultraviolet irradiation material testing system is: P
s=P * (1-cos θ) * T
Zr* R
m, wherein, P
sBe the energy of irradiation to described sample surfaces, P is the power of described EUV light source in 2 π solid angles, and θ is the collection half-angle of described collection mirror, T
ZrBe the transmitance of described filter plate, R
mReflectivity for described collection mirror.
According to a kind of embodiment of the present invention, have a D translation platform in the described sample chamber, it is used for installing described sample, CCD and energy meter.
According to a kind of embodiment of the present invention, described D translation platform is formed by connecting by holder combination by three one dimension translation stages.
According to a kind of embodiment of the present invention, described D translation platform comprises X-axis translation stage, Y-axis translation stage, Z axis translation stage, X-Z bracing strut and sample platform bracket, wherein said X-axis translation stage is installed on the nut of described Y-axis translation stage, described X-Z bracing strut is installed on the nut of this X-axis translation stage, described Z axis translation stage is installed on this X-Z bracing strut, described sample platform bracket is installed on the nut of this Z axis translation stage, fixes respectively described sample, CCD and energy meter on this sample platform bracket.
According to a kind of embodiment of the present invention, the sensitive plane of the detector of described CCD, energy meter and the test surfaces of described sample keep in one plane, and this plane needs vertical with the primary optical axis of incoming flow EUV irradiation.
(3) beneficial effect
The present invention can provide extreme ultraviolet irradiation and can directly measure the characteristics such as the spectral distribution of sample place extreme ultraviolet irradiation, spot size, irradiation energy, by the variation of material surface microstructure behind the predose, obtains the extreme ultraviolet irradiation damage situation of different samples.
Description of drawings
Fig. 1 is the structural representation of existing a kind of typical extreme ultraviolet irradiation material testing system;
Fig. 2 is the structural representation of an embodiment of extreme ultraviolet irradiation material testing system of the present invention;
Fig. 3 has shown the mounting structure of catoptron of an embodiment of extreme ultraviolet irradiation material testing system of the present invention;
Fig. 4 has shown in the sample chamber of an embodiment of extreme ultraviolet irradiation material testing system of the present invention by the moving structure that sample is installed of D translation.
Embodiment
The present invention proposes a kind of extreme ultraviolet irradiation material testing system, it can provide extreme ultraviolet irradiation and can detect the characteristics such as the spectral distribution of extreme ultraviolet irradiation, spot size, irradiation energy density, by the variation of material surface microstructure behind the predose, obtain the extreme ultraviolet irradiation damage situation of different samples.In addition, the present invention also proposes the irradiation energy computation process for this extreme ultraviolet irradiation material testing system.
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 2 is the structural representation of an embodiment of extreme ultraviolet irradiation material testing system of the present invention.As shown in Figure 2, it comprises EUV light source chamber 1, filter plate chamber 2, collects mirror cell 3, spectral detection chamber 4, transfer chamber 5 and sample chamber 6.Each chamber is preferably the employing modular design, links to each other by the standard flange interface, makes things convenient for mounting or dismounting and debugging between each element.
Described EUV light source chamber 1 is used for holding EUV light source 11, and EUV light source 11 can be LPP (Laser Produced Plasma) light source or DPP (Discharge Produced Plasma) light source.EUV light source 11 produces plasma, gives off the nearly grenz ray of wide range, and produces debris contamination thing (particularly DPP light source) in than large space; EUV light source 11 is preferably inside debris collector, when can see through the nearly grenz ray of wide range the chip constraint is firmly controlled the further diffusion of chip.
Described filter plate chamber 2 is used for placing the filter plate (not shown).Described filter plate can be comprised of the zirconium lattice of hundreds of nano thickness and the support nickel screen of tens micron thickness, the nearly grenz ray of wide range can be filtered into narrow spectrum EUV irradiation.
Described collection mirror cell 3 is used for placing collection mirror 31.Collect mirror 31 and can be installed in the inwall of collecting Room 3, mirror cell by the mounting bracket (not shown); Mounting bracket can be manually or motorized adjustment assembling position and the collection angle of collecting mirror 31.Collect mirror 31 and can be catoptron, the EUV irradiation that is used for dispersing converges to sample chamber 6 D translation platforms 61.Collect mirror 31 and can be ellipsoidal mirror or anchor ring/toroidal mirror: when it was ellipsoidal mirror, sample exposure spots place was two focuses of ellipsoid in EUV light source 11 plasma places and the sample chamber.In this embodiment, as shown in Figure 2, penetrate vertically downward and keep good beam characteristics by collecting light beam behind the mirror.
According to the present invention, filter plate chamber 2 can be placed on before the collection mirror cell 3 or collect after the mirror cell 3.Here " front " and " afterwards " respectively the irradiation that sends of corresponding EUV light source 11 working direction by optical element " elder generation " and " afterwards ".In the time of before filter plate chamber 2 is positioned at collection mirror cell 3, as shown in Figure 2, itself and EUV light source chamber 1 all are coupled with collection mirror 31.In the time of after filter plate chamber 2 is positioned at collection mirror cell 3, it is coupled to collects between mirror cell 3 and the spectral detection chamber 4.No matter filter plate chamber 2 is with EUV light source chamber 1 and collect mirror 31 couplings, or with collection mirror cell 3 and 4 couplings of spectral detection chamber, the spectrum that is recorded by spectral detection chamber 4 all is by the spectrum after 2 filtering of filter plate chamber, and can think that the spectral characteristic that records is the spectral characteristic of irradiation on material sample.In addition, if light path is shifted out in filter plate chamber 2, perhaps filter plate chamber 2 is coupled between spectral detection chamber 4 and the transfer chamber 5, perhaps filter plate chamber 2 is coupled between transfer chamber 5 and the sample chamber 6, the spectrum that is recorded by spectral detection chamber 4 is filtering spectrum before; By contrasting filtering before and spectral characteristic afterwards, can assess the filtering performance of filter plate in the filter plate chamber 2.
Described spectral detection chamber 4 is used for installing a catoptron 41 and a spectrometer 42, and catoptron 41 is used for and will reflexes to spectro-metre from the EUV irradiation of collecting mirror cell 3.Take the Rowland circle grating spectrograph as example, described spectrometer is connected spectrometer vacuum chamber by slit with collection mirror cell 3; The EUV irradiation part that reflects back through catoptron 41 pass through slit, the grating beam splitting in spectrometer respectively is incident upon Rowland circle on by wavelength coverage light beam again; Have one on the Rowland circle according to the track of Rowland circle radial design, detector moves at this track, surveys thus the intensity level of different wave length, thereby obtains spectral distribution property.
Fig. 3 has shown the mounting structure of the catoptron among this embodiment.As shown in Figure 3, at one dimension translation stage 44 support 43 is installed, is threaded connection on the support 43, the mode mounting plane catoptron 41 such as viscose glue connection.By collecting converging the EUV light beam and after the plane mirror reflection, can enter into spectrometer 42 behind the mirror cell 4, because the spectrometer of measure spectrum did not need multiple beam, so can dwindle mirror reflection surface, only segment beam is reflected into spectrometer.One dimension translation stage 44 can be the ball screw type translation stage, is rotated by the motor-driven leading screw, thereby drives the nut translation that support 43 is installed; Because need to satisfy the vacuum work condition and consider grease to the strong absorption of EUV irradiation, used motor is without oily ceramic motor; Motor can be controlled outside chamber in remote control, and perhaps being connected to by the vacuum plug has line traffic control again outside chamber on the chamber.This extreme ultraviolet irradiation material testing system can not the on-line testing spectral characteristic, test spectral not when carrying out the material irradiation test, and this translation stage 44 drives supports 43 and catoptron 41 to deviate from the EUV exposure beam light path is not stopped by device; When the needs test spectral, mobile this translation stage 44 is connected into light path with catoptron, and reflection EUV irradiation is in the interface slit of spectrometer 42.The spectral characteristic that records of off-line just can be thought the spectral characteristic of irradiation on material sample like this.
CCD616 is used for measuring the hot spot characteristic of EUV irradiation.Energy meter 617 is used for measuring the energy of EUV irradiation.Thus, switch by the position, CCD616 can switch to respectively the position identical with the sample of accepting EUV irradiation with energy meter 617, thereby makes the hot spot characteristic of the EUV irradiation that CCD616 measures identical with hot spot characteristic and the irradiation energy of irradiation on material sample S with the EUV irradiation energy of being measured by energy meter 617.
In order to realize the switching between position adjustment and above-mentioned three elements, in the sample chamber 6 D translation platform 61 can be installed, it is used for settling and mobile example S, CCD616 and energy meter 617 at three-dimensional, and guarantees that mobile example S, CCD616 and energy meter 617 can switch to the same position of accepting EUV irradiation.
Fig. 4 has shown in the sample chamber 6 of this embodiment and by D translation platform 61 sample S, CCD616 and energy meter 617 has been installed.As shown in Figure 4, this D translation platform 61 is formed by connecting by holder combination by three one dimension translation stages.The one dimension translation stage can be the ball screw type translation stage, is rotated by the motor-driven leading screw, thereby drives the nut translation.
Because need to satisfy the vacuum work condition and consider grease to the strong absorption of EUV irradiation, used motor is without oily ceramic motor; Motor can be controlled outside chamber in remote control, and perhaps being connected to by the vacuum plug has line traffic control again outside chamber on the chamber.
A kind of array mode of described D translation platform is: X-axis translation stage 611 is installed on the nut of Y-axis translation stage 612, X-Z bracing strut 614 is installed on the nut of X-axis translation stage, Z axis translation stage 613 is installed on the X-Z bracing strut 614, sample platform bracket 615 is installed, difference fixed sample S, CCD616 and energy meter 617 on the sample platform bracket 615 on the nut of Z axis translation stage 613.
Need guarantee when mounted three mutual at right angle settings of one dimension translation stage; The test surfaces of the sensitive plane of the detector of CCD616, energy meter 617 and sample S keeps in one plane, and this plane needs vertical with the primary optical axis of incoming flow EUV irradiation.Like this, can think the hot spot characteristic of the EUV irradiation measured by CCD616 and the energy of the EUV irradiation measured by energy meter 617 is exactly hot spot characteristic and the irradiation energy of irradiation on material sample.
Detect spot size and the energy of EUV irradiation by moving three dimension translation stage 61, concrete mode is: regulate the irradiation spot size (using CCD to survey) of sample plane by regulating the vertical direction displacement, thus corresponding different EUV irradiation energy density (energy of being measured by energy meter/surveyed by CCD facula area); Substitute irradiation test points different on CCD, energy meter and the sample by two displacements regulating in the surface level.
The energy computation process of the extreme ultraviolet irradiation material testing system of this embodiment is:
P
s＝P
a×T
zr×R
m，P
a＝P×(1-cosθ)，
Be P
s=P * (1-cos θ) * T
Zr* R
m
Wherein, P
sBe the energy of irradiation to the material sample surface, P
aEnter power in the collection angle scope of collecting mirror for what EUV light source 11 sent, P is the power of EUV light source 11 2 π solid angles (2 π sr) in, and θ is the collection half-angle of collection mirror 31, T
ZrBe the transmitance of filter plate, R
mFor collecting the reflectivity of mirror 31.
When EUV light source 11 inside have when being filled with working gas in debris collector and the system, the transmitance of supposing the debris collector of EUV light source is T
DM, the transmitance of working gas is T in the light path
p(for example DPP light source take Xe gas as working gas).
P is then arranged
s=P
a* T
DM* T
Zr* R
m* T
p=P * (1-cos θ) * T
DM* T
Zr* R
m* T
p
The present invention can test metal material (aluminium and aluminium alloy, copper and aldary, steel, invar etc.), nonmetallic materials (pottery, high molecular polymer etc.), optical material (optical thin film, optical substrate etc.), device (electronic component, cable, sensor) and other materials (such as coating etc.).
Before carrying out the irradiation test, observe the also surface condition of recording materials sample by optical microscope first; Then, use test macro of the present invention, after different irradiation energy density and exposure time test, observe the also surface condition of recording materials sample by optical microscope again; By the variation of material surface microstructure behind the sample predose, obtain the extreme ultraviolet irradiation damage situation of different samples.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; be understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an extreme ultraviolet irradiation material testing system is characterized in that, comprises EUV light source chamber (1), filter plate chamber (2), collection mirror cell (3), spectral detection chamber (4) and sample chamber (6), wherein
Described EUV light source chamber (1) is used for holding EUV light source (11), and this EUV light source (11) is used for giving off the nearly grenz ray of wide range;
Described filter plate chamber (2) is used for placing filter plate, and this filter plate is used for the nearly grenz ray of described wide range is filtered into narrow spectrum EUV irradiation;
Described collection mirror cell (3) is used for placing collects mirror (31), and this collection mirror (31) is used for described EUV irradiation is converged to described sample chamber (6);
Described spectral detection chamber (4) is used for installing a catoptron (41) and a spectrometer (42), and described catoptron (41) is used for and will reflexes to described spectrometer (42) from the EUV irradiation of collecting mirror cell (3);
Described sample chamber (6) is used for holding sample (S), CCD (616) and the energy meter (617) that will test, and can make sample (S), CCD (616) and energy meter (617) move in turn the same position that can accept EUV irradiation.
2. extreme ultraviolet irradiation material testing system as claimed in claim 1, it is characterized in that: also comprise transfer chamber (5), it is used for connecting described spectral detection chamber (4) and described sample chamber (6), and introducing in the described sample chamber (6) from the EUV irradiation of described spectral detection chamber (4).
3. extreme ultraviolet irradiation material testing system as claimed in claim 2, it is characterized in that: described transfer chamber is equipped with the vacuum shutter in (6), to control umber of exposures and the exposure time of described EUV irradiation on sample (S).
4. such as each described extreme ultraviolet irradiation material testing system in the claims 1 to 3, it is characterized in that: described filter plate chamber (2) is placed on before or after the described collection mirror cell (3).
5. such as each described extreme ultraviolet irradiation material testing system in the claims 1 to 3, it is characterized in that, one dimension translation stage (44) and a support (43) also are installed in the described spectral detection chamber (4), this support (43) is installed on this one dimension translation stage (44), and described catoptron (41) is installed on this support (43).
6. such as each described extreme ultraviolet irradiation material testing system in the claims 1 to 3, it is characterized in that: the computation process of the energy of this extreme ultraviolet irradiation material testing system is:
P
s＝P×(1-cosθ)×T
zr×R
m，
Wherein, P
sBe the energy of irradiation to described sample (S) surface, P is the power of described EUV light source in 2 π solid angles, and θ is the collection half-angle of described collection mirror (31), T
ZrBe the transmitance of described filter plate, R
mReflectivity for described collection mirror (31).
7. such as each described extreme ultraviolet irradiation material testing system in the claims 1 to 3, it is characterized in that: have a D translation platform (61) in described sample chamber (6), it is used for installing described sample (S), CCD (616) and energy meter (617).
8. extreme ultraviolet irradiation material testing system as claimed in claim 7, it is characterized in that: described D translation platform (61) is formed by connecting by holder combination by three one dimension translation stages.
9. extreme ultraviolet irradiation material testing system as claimed in claim 8, it is characterized in that: described D translation platform (61) comprises X-axis translation stage (611), Y-axis translation stage (612), Z axis translation stage (613), X-Z bracing strut (614) and sample platform bracket (615), wherein
Described X-axis translation stage (611) is installed on the nut of described Y-axis translation stage (612), described X-Z bracing strut (614) is installed on the nut of this X-axis translation stage, the upper described Z axis translation stage (613) of installing of this X-Z bracing strut (614), described sample platform bracket (615) is installed on the nut of this Z axis translation stage (613), fixes respectively described sample (S), CCD (616) and energy meter (617) on this sample platform bracket (615).
10. extreme ultraviolet irradiation material testing system as claimed in claim 9, it is characterized in that: the sensitive plane of the detector of described CCD (616), energy meter (617) and the test surfaces of described sample (S) keep in one plane, and this plane is vertical with the primary optical axis of incoming flow EUV irradiation.
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| CN105388102A (en) * | 2015-12-24 | 2016-03-09 | 同济大学 | Thin-film material extreme ultraviolet radiation damage experiment platform |
| CN108918094A (en) * | 2018-06-11 | 2018-11-30 | 同济大学 | A kind of desktop type high-energy density extreme ultraviolet irradiation damage test device |
| CN110895192A (en) * | 2019-11-25 | 2020-03-20 | 中国科学院微电子研究所 | Extreme ultraviolet optical element performance parameter test system |
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| CN112432968A (en) * | 2020-10-21 | 2021-03-02 | 中国核动力研究设计院 | Preparation method of irradiated reactor structure material thermal conductivity test sample and test sample box |
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Cited By (11)
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| CN104597115A (en) * | 2015-02-12 | 2015-05-06 | 中国科学院光电研究院 | Vacuum acquisition device for EUV irradiation material test system and corresponding test method |
| CN104597115B (en) * | 2015-02-12 | 2019-03-19 | 中国科学院光电研究院 | The vacuum acquirement device and corresponding detection method of test system for extreme ultraviolet radiation material |
| CN104619104A (en) * | 2015-02-16 | 2015-05-13 | 哈尔滨工业大学 | Extreme ultraviolet source system for discharge detection of Xe medium capillaries |
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| CN105258925A (en) * | 2015-11-12 | 2016-01-20 | 中国科学院光电研究院 | Extreme ultraviolet (EUV) source performance parameter measuring system |
| CN105258925B (en) * | 2015-11-12 | 2018-01-02 | 中国科学院光电研究院 | A kind of measuring system of EUV light source performance parameter |
| CN105388102A (en) * | 2015-12-24 | 2016-03-09 | 同济大学 | Thin-film material extreme ultraviolet radiation damage experiment platform |
| CN108918094A (en) * | 2018-06-11 | 2018-11-30 | 同济大学 | A kind of desktop type high-energy density extreme ultraviolet irradiation damage test device |
| CN110895192A (en) * | 2019-11-25 | 2020-03-20 | 中国科学院微电子研究所 | Extreme ultraviolet optical element performance parameter test system |
| CN111504889A (en) * | 2020-04-23 | 2020-08-07 | 中国科学院微电子研究所 | Extreme ultraviolet cumulative irradiation damage test system and method |
| CN112432968A (en) * | 2020-10-21 | 2021-03-02 | 中国核动力研究设计院 | Preparation method of irradiated reactor structure material thermal conductivity test sample and test sample box |
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