CN102931282A - Preparation method of back polished silicon chip - Google Patents
Preparation method of back polished silicon chip Download PDFInfo
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- CN102931282A CN102931282A CN2012104568217A CN201210456821A CN102931282A CN 102931282 A CN102931282 A CN 102931282A CN 2012104568217 A CN2012104568217 A CN 2012104568217A CN 201210456821 A CN201210456821 A CN 201210456821A CN 102931282 A CN102931282 A CN 102931282A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a preparation method of a back polished silicon chip. The preparation method of the back polished silicon chip is characterized by comprising the following steps: cleaning surface phosphate glass of the diffused silicon chip with mixed solution of hydrofluoric acid and nitric acid, etching the back with the mixed solution of hydrofluoric acid, nitric acid and sulphuric acid after finishing cleaning to exert a polishing effect; then cleaning porous silicon produced from the reaction with sodium hydroxide solution, neutralizing alkaline liquor with the hydrofluoric acid; finally cleaning the surface of the silicon chip with pure water, and drying with hot air. According to the back polished silicon chip fabricated by the method disclosed by the invention, the battery light absorption is improved, the battery conversion efficiency is improved, and the production cost is reduced.
Description
Technical field
The present invention relates to the preparation method of crystal silicon solar battery back mirror polish technique, be mainly used in crystal silicon cell transformation efficiency lifting aspect, specifically a kind of preparation method of polished backside silicon chip.
Background technology
Solar energy power generating becomes one of branch with the fastest developing speed in the new forms of energy over past ten years.Crystal silicon solar energy battery is most widely used battery types in the solar energy power generating.Account for 80% the market share.Global photovoltaic adding new capacity surpassed 27GW in 2011.
The transformation efficiency of solar cell is the major criterion of weighing a photovoltaic enterprise technology level, the conventional batteries production line is significant raising efficiency at present, although yet novel selective emitter battery, N-type battery etc. have improved efficient, have also greatly increased equipment cost, technique risk simultaneously.The conventional batteries back-etching is coarse, causes light to absorb in wafer bulk lower, affects short circuit current, the use of polished backside can obviously improve cell conversion efficiency, it has increased the reflection of light at inside battery, has effectively promoted the long wave Optical Absorption, has effectively promoted the battery short circuit electric current.In addition, this technique can directly realize in conventional production lines, need not newly added equipment.
Summary of the invention
The objective of the invention is to absorb low problem for current battery sheet longwave optical and proposed a kind of preparation method who increases the polished backside silicon chip of light absorption.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of preparation method of polished backside silicon chip is characterized in that it may further comprise the steps:
The mixed liquor clean surface phosphorosilicate glass of the silicon chip that (1) will spread hydrofluoric acid, nitric acid, scavenging period is controlled at 3-5min;
(2) silicon chip that step (1) has been cleaned is sent into the wet etching machine, and etch period 2-6min, etching liquid are strongly acidic solution;
(3) silicon chip that step (2) is obtained soaks with sodium hydroxide solution, removes the porous silicon that reaction generates, and the sodium hydroxide solution mass concentration is 4%-6%, and soak time is 20-40s;
(4) the silicon chip hydrofluoric acid solution soaking and washing that step (3) is obtained, the surperficial alkali lye that neutralizes, the mass concentration of hydrofluoric acid solution is 7%-9%, soak time is 20-40s;
(5) the silicon chip pure water rinsing that step (4) is obtained, washing time are 30-40s;
(6) silicon chip that obtains with air knife drying step (5), hot air temperature are 30-50 ℃.
The mass concentration of hydrofluoric acid and nitric acid is respectively 49%, 68% in the step of the present invention (1), and the volume ratio of hydrofluoric acid, nitric acid is 3:14, cleans phosphorosilicate glass 4min.
Step of the present invention (2) middle strong acidity solution is the mixed liquor of hydrofluoric acid, nitric acid, sulfuric acid, and the mass concentration of the mixed liquor of described hydrofluoric acid, nitric acid, sulfuric acid is respectively 49%, 68%, 98%, and their volume ratio is 1:10:7.
The wet etching motor speed is at 0.8-1.2m/min in the step of the present invention (2).
The sodium hydroxide solution mass concentration is 5% in the step of the present invention (3), soaks 30s.
The hydrofluoric acid solution mass concentration is 8% in the step of the present invention (4), soaks 30s.
Beneficial effect of the present invention: the battery of polished backside preparation used in the present invention does not increase novel device aborning, can be by traditional slot type wool-weaving machine, and the chain type etching machine is finished.By polished backside technique, cell piece has increased the longwave optical absorption, effectively promotes the cell piece short circuit current, thereby improves the cell piece transformation efficiency.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
Embodiment 1.A kind of preparation method of polished backside silicon chip, it is characterized in that it may further comprise the steps: the silicon chip mass concentration that (1) will spread is that 49% hydrofluoric acid solution and mass concentration are that 68% salpeter solution mixes the clean surface phosphorosilicate glass, scavenging period is controlled at 4min, and wherein the volume ratio of hydrofluoric acid, nitric acid is 3:14;
(2) silicon chip that step (1) has been cleaned is sent into the wet etching machine, the wet etching motor speed is 1.0m/min, etch period 4min, etching liquid is the mixed liquor of hydrofluoric acid, nitric acid, sulfuric acid, the mass concentration of the mixed liquor of described hydrofluoric acid, nitric acid, sulfuric acid is respectively 49%, 68%, 98%, and their volume ratio is 1:10:7;
(3) the silicon chip mass concentration that step (2) is obtained is 5% sodium hydroxide solution immersion, removes the porous silicon that reaction generates, and soak time is 30s;
(4) the silicon chip mass concentration that step (3) is obtained is 8% hydrofluoric acid solution soaking and washing, the surperficial alkali lye that neutralizes, and soak time is 30s;
(5) the silicon chip pure water rinsing that step (4) is obtained, washing time are 35s;
(6) silicon chip that obtains with air knife drying step (5), hot air temperature are 45 ℃.
Embodiment 2.A kind of preparation method of polished backside silicon chip, it is characterized in that it may further comprise the steps: the silicon chip mass concentration that (1) will spread is that 49% hydrofluoric acid solution and mass concentration are that 68% salpeter solution mixes the clean surface phosphorosilicate glass, scavenging period is controlled at 3min, and wherein the volume ratio of hydrofluoric acid, nitric acid is 3:14;
(2) silicon chip that step (1) has been cleaned is sent into the wet etching machine, the wet etching motor speed is 1.2m/min, etch period 4min, etching liquid is the mixed liquor of hydrofluoric acid, nitric acid, sulfuric acid, the mass concentration of the mixed liquor of described hydrofluoric acid, nitric acid, sulfuric acid is respectively 49%, 68%, 98%, and their volume ratio is 1:10:7;
(3) the silicon chip mass concentration that step (2) is obtained is 5% sodium hydroxide solution immersion, removes the porous silicon that reaction generates, and soak time is 35s;
(4) the silicon chip mass concentration that step (3) is obtained is 8% hydrofluoric acid solution soaking and washing, the surperficial alkali lye that neutralizes, and soak time is 20s;
(5) the silicon chip pure water rinsing that step (4) is obtained, washing time are 40s;
(6) silicon chip that obtains with air knife drying step (5), hot air temperature are 35 ℃.
Claims (6)
1. the preparation method of a polished backside silicon chip is characterized in that it may further comprise the steps:
The mixed liquor clean surface phosphorosilicate glass of the silicon chip that (1) will spread hydrofluoric acid, nitric acid, scavenging period is controlled at 3-5min;
(2) silicon chip that step (1) has been cleaned is sent into the wet etching machine, and etch period 2-6min, etching liquid are strongly acidic solution;
(3) silicon chip that step (2) is obtained soaks with sodium hydroxide solution, removes the porous silicon that reaction generates, and the sodium hydroxide solution mass concentration is 4%-6%, and soak time is 20-40s;
(4) the silicon chip hydrofluoric acid solution soaking and washing that step (3) is obtained, the surperficial alkali lye that neutralizes, the mass concentration of hydrofluoric acid solution is 7%-9%, soak time is 20-40s;
(5) the silicon chip pure water rinsing that step (4) is obtained, washing time are 30-40s;
(6) silicon chip that obtains with air knife drying step (5), hot air temperature are 30-50 ℃.
2. the preparation method of polished backside silicon chip according to claim 1 is characterized in that the mass concentration of the middle hydrofluoric acid of step (1) and nitric acid is respectively 49%, 68%, and the volume ratio of hydrofluoric acid, nitric acid is 3:14, cleans phosphorosilicate glass 4min.
3. the preparation method of polished backside silicon chip according to claim 1 and 2, it is characterized in that step (2) middle strong acidity solution is the mixed liquor of hydrofluoric acid, nitric acid, sulfuric acid, the mass concentration of the mixed liquor of described hydrofluoric acid, nitric acid, sulfuric acid is respectively 49%, 68%, 98%, and their volume ratio is 1:10:7.
4. the preparation method of polished backside silicon chip according to claim 1 and 2 is characterized in that the wet etching motor speed is at 0.8-1.2m/min in the step (2).
5. the preparation method of polished backside silicon chip according to claim 1 is characterized in that the sodium hydroxide solution mass concentration is 5% in the step (3), soaks 30s.
6. the preparation method of polished backside silicon chip according to claim 1 is characterized in that the hydrofluoric acid solution mass concentration is 8% in the step (4), soaks 30s.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590113A (en) * | 2013-11-18 | 2014-02-19 | 银川隆基硅材料有限公司 | Monocrystalline silicon dislocation corrosive agent and detection method |
| CN103715304A (en) * | 2013-12-24 | 2014-04-09 | 天津英利新能源有限公司 | Method for treating chromatic aberration piece through wet etching machine |
| CN106653948A (en) * | 2016-12-28 | 2017-05-10 | 江西瑞晶太阳能科技有限公司 | Solar cell and cell back polishing process thereof |
| CN107492489A (en) * | 2017-08-14 | 2017-12-19 | 通威太阳能（安徽）有限公司 | A kind of polysilicon chip polished backside technique |
| CN108054093A (en) * | 2017-12-07 | 2018-05-18 | 苏州润阳光伏科技有限公司 | Monocrystalline silicon piece etches polishing method |
| CN109830564A (en) * | 2018-12-06 | 2019-05-31 | 中建材浚鑫科技有限公司 | A kind of back polishing process of solar battery sheet |
| CN111128712A (en) * | 2019-12-20 | 2020-05-08 | 北京工业大学 | Method for polishing silicon wafer by metal-assisted chemical etching |
| CN112410888A (en) * | 2020-11-20 | 2021-02-26 | 上海提牛机电设备有限公司 | Etching liquid and etching method for back of ultrathin wafer |
| CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
| CN115207167A (en) * | 2022-09-16 | 2022-10-18 | 英利能源发展有限公司 | Method for cleaning silicon polished surface |
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| CN102185011A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Texturing method for solar cell |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590113A (en) * | 2013-11-18 | 2014-02-19 | 银川隆基硅材料有限公司 | Monocrystalline silicon dislocation corrosive agent and detection method |
| CN103590113B (en) * | 2013-11-18 | 2016-08-17 | 银川隆基硅材料有限公司 | Monocrystalline silicon dislocation corrosive agent and detection method |
| CN103715304A (en) * | 2013-12-24 | 2014-04-09 | 天津英利新能源有限公司 | Method for treating chromatic aberration piece through wet etching machine |
| CN103715304B (en) * | 2013-12-24 | 2016-09-07 | 天津英利新能源有限公司 | A kind of method realizing the process of aberration sheet based on wet etching machine |
| CN106653948A (en) * | 2016-12-28 | 2017-05-10 | 江西瑞晶太阳能科技有限公司 | Solar cell and cell back polishing process thereof |
| CN107492489A (en) * | 2017-08-14 | 2017-12-19 | 通威太阳能（安徽）有限公司 | A kind of polysilicon chip polished backside technique |
| CN108054093A (en) * | 2017-12-07 | 2018-05-18 | 苏州润阳光伏科技有限公司 | Monocrystalline silicon piece etches polishing method |
| CN109830564A (en) * | 2018-12-06 | 2019-05-31 | 中建材浚鑫科技有限公司 | A kind of back polishing process of solar battery sheet |
| CN111128712A (en) * | 2019-12-20 | 2020-05-08 | 北京工业大学 | Method for polishing silicon wafer by metal-assisted chemical etching |
| CN111128712B (en) * | 2019-12-20 | 2022-09-20 | 北京工业大学 | Method for polishing silicon wafer by metal-assisted chemical etching |
| CN112410888A (en) * | 2020-11-20 | 2021-02-26 | 上海提牛机电设备有限公司 | Etching liquid and etching method for back of ultrathin wafer |
| CN113399341A (en) * | 2021-05-12 | 2021-09-17 | 上海富乐德智能科技发展有限公司 | Cleaning regeneration method of SiC epitaxial wafer |
| CN115207167A (en) * | 2022-09-16 | 2022-10-18 | 英利能源发展有限公司 | Method for cleaning silicon polished surface |
| CN115207167B (en) * | 2022-09-16 | 2022-11-22 | 英利能源发展有限公司 | Method for cleaning silicon polished surface |
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Application publication date: 20130213 |