CN103336149A - Atomic force microscopy micro cantilever and application based on nanometer particle lattice quantum transportation - Google Patents
Atomic force microscopy micro cantilever and application based on nanometer particle lattice quantum transportation Download PDFInfo
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- CN103336149A CN103336149A CN2013102561256A CN201310256125A CN103336149A CN 103336149 A CN103336149 A CN 103336149A CN 2013102561256 A CN2013102561256 A CN 2013102561256A CN 201310256125 A CN201310256125 A CN 201310256125A CN 103336149 A CN103336149 A CN 103336149A
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Abstract
The invention relates to an atomic force microscopic micro cantilever based on the nanometer particle lattice quantum transportation, which comprises an AFM (atomic force microscopy) probe pinpoint (1), a cantilever beam (4), at least one group of nanometer particle lattice (3) adhered to the surface of the cantilever beam (4) and at least a pair of micro electrodes (2) for measuring the resistance value of the nanometer particle lattices (3) positioned on the surface of the cantilever beam (4). According to the invention, the acting force information between the AFM probe pinpoint (1) and a sample can be fed back to the nanometer particle lattices (3) through the bending degree of the cantilever beam (4) to cause the variation of the tunnelling resistance (or conductance) of the nanometer particle lattices (3), and further the micro electrodes (2) are used for measuring the variation value of the resistance (or the conductance) to obtain the surface structure information of the sample. The invention provides an electric quantity signal utilizing the nanometer particle lattice, which is used for replacing the conventional laser signal to be taken as the measuring signal of the AFM probe, so that the manufacture cost of an AFM instrument can be effectively reduced and the AFM instrument is likely to be further miniaturized.
Description
Technical field
The invention belongs to input instrument field, specifically relate to the design of a kind of atomic force microscope micro-cantilever and improvement, change the pattern that detects the nm yardstick by electrical quantities.
Background technology
Atomic force microscope is the important detection means in nano science and engineering field, can be by the detection of nm yardstick needle point and sample surfaces microcell power being realized the retrieval of microcell pattern.Its groundwork principle is based on acting force between needle point and the sample and depends on distance between them, and needle point is attached on the micro-cantilever, and beam of laser impinges upon on the micro-cantilever, can detect the bending of micro-cantilever.So distance of needle point of every change and sample during atomic force microscope work, just changed the repulsive force of substrate to needle point, thereby make the micro-cantilever bending that needle point depends on, thereby the laser reflection angle is changed, finally note needle point-sample interval with the change of reflection angle, the scanning whole sample has obtained the shape appearance figure of sample.Not not how long, their inventor Binnig and Rohrer have just obtained Nobel Prize in physics after the invention of atomic force microscope and scanning tunnel microscope.
People have carried out a lot of improvement after the atomic force microscope invention, still are the focuses of numerous documents and patent work up to nowadays.In the document of having delivered at present, comprise multiple to many-sided transformations such as the design of atomic force microprobe, driving method, sweep parameter, fresh information acquisition methods.Such as, the someone proposes the probe of atomic force microscope is designed, and improves at the number of probe, the sharp-pointed degree of probe, the aspects such as physical parameter of probe, can provide or improve image quality or the speed of atomic force microscope.Someone proposes, can do design at the atomic force microprobe, the detection of multiple information such as realization sound, heat, electromotive force, thereby form scanning sound, scanning calorimeter and scanning electromotive force microscope, the rerum natura that is used for micro-nano-scale detects, this has become one of main flow of the micro-improvement of atomic force, similarly thinking even be used to measure the topological structure of DNA.Also there are a few peoples to propose improvement to atomic force microscope mirror body.The input atomic force microscope just can retrieve 98 patents of invention in the Chinese patent retrieval, all is above-mentioned relevant improvement content basically.
Traditional micro-cantilever is by Si
3N
4Constitute, the high-quality golden film of outside coating, laser beam is radiated on the golden film, because the bending of micro-cantilever changes the reflection direction of light beam, by just can detect the degree of crook of micro-cantilever to the detection of beam reflection direction.This work is based on us for the basic research work of nanoparticulate thin films transmission.
Summary of the invention
The present invention's proposition is transformed design and the curved detection method of micro-cantilever based on the micro-micro-cantilever of atomic force that the nano particle dot array quantum transports.Micro-cantilever has prepared the nano particle dot array structure, and has applied electrode, and the electricity that changes sample by the spacing that changes nano particle dot array is led, and the atomic little change of nano particle dot array just can cause the variation of electric derivative magnitude.Thereby detect the local distance of needle point-sample.
Technical solution of the present invention is, a kind of micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum comprises an AFM probe tip (1) and is attached on the semi-girder (4); At least one group of nano particle dot array (3) that is attached to semi-girder (4) surface; At least one pair of is positioned at the microelectrode (2) that the semi-girder surface is used for measuring described nano particle dot array (3) resistance value; Nano particle electronics dot matrix and electrode are printed on the micro-cantilever, when micro-cantilever when bending with sample effect, variation has also taken place in the nano particle dot array spacing that is printed on the micro-cantilever back side, causes the variation that the nano particle dot array electricity is led; Detect this electricity and lead variation, just detect the bending of cantilever, detect the local distance of needle point-sample accordingly.The application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum comprises an AFM probe tip (1) and is attached on the semi-girder (4); At least one group of nano particle dot array (3) that is attached to semi-girder (4) surface; At least one pair of is positioned at the microelectrode (2) that the semi-girder surface is used for measuring described nano particle dot array (3) resistance value; Nano particle electronics dot matrix and electrode are printed on the micro-cantilever, when micro-cantilever when bending with sample effect, variation has also taken place in the nano particle dot array spacing that is printed on the micro-cantilever back side, causes the variation that the nano particle dot array electricity is led; Detect this electricity and lead variation, just detect the bending of cantilever, detect the local distance of needle point-sample accordingly.
The present invention replaces traditional laser to detect the degree of crook of AFM micro cantilever probe by the resistance detection of using nano particle dot array.
Further, in the wherein said nano particle dot array (3) tunnelling to transport be main conduction form.
Further, the nano particle number density of wherein said nano particle dot array (3) should be greater than the seepage flow threshold value, makes its resistance (or electricity is led) can be by the external electrical instrument measurement.
Further, wherein said microelectrode (2) has enough strong conductive capability, and can stablize and stick to semi-girder (4) surface, be to have favorable mechanical stability at semi-girder (4) dither, can be as effective electrical signal transfer medium of nano particle dot array (3).
Wherein said semi-girder (4) is used Si
3N
4Material preparation, its size, shape and structure will have influence on the measurement range of AFM probe, also can have influence on nano particle dot array simultaneously) measurement sensitivity.The range and the sensitivity that are the AFM probe can be adjusted by the physical dimension that changes semi-girder (4).The xsect of semi-girder (4) is that rectangle or circle, ellipse all can.The making material of semi-girder (4) is silicon nitride (Si
3N
4), its elastic modulus is about E=35000 ± 10000MPa, supposes that the physical dimension of semi-girder (4) is: L=200 ± 50 μ m, h=7 ± 4 μ m, b=40 ± 10 μ m.
A pair of microelectrode (2) is attached to AFM semi-girder (4) with nano particle dot array (3), and nano particle dot array (3) is positioned between the microelectrode (2), and its quantum tunneling electricity is led and can be detected by the external detection instrument.
Microelectrode 2 uses gold.The structure of electrode, size and in the brachium position of residing position on the semi-girder about needle point can also be decided according to the actual requirements.Metal (silver, copper) or semiconductor (silicon, germanium etc.) nano particle dot array orientated deposition are gone up in semi-girder (4) and are formed nano particle dot array (3), can effectively regulate and control the electron transport character of nano particle dot array (3) by the mode of control nano particle number density (10～80% coverage rate, the area ratio that nano particle covers).
The present invention is based on following mechanism, the metal Nano structure that namely has nano gap (nanogaps) in the micro-cantilever preparation, because the tunnelling electric conductivity value in this metal Nano structure is subjected to the control of nano gap, and the size of nano gap is relevant with the deformation of micro-cantilever, whereby, measure the deformation data that variation that the tunnelling electricity of nano gap leads namely can the perception cantilever, further can obtain the needle point of cantilever and the atom acting force of sample room.
Prepared the nano particle dot array structure, and applied electrode, examined discovery, the electricity that can change sample by the spacing that changes nano particle dot array is led, and the atomic little change of nano particle dot array just can cause the variation of electric derivative magnitude.Nano particle and electrode are passed through MEMS (micro electro mechanical system) (Micro Electro Mechanical Systems, MEMS) mode such as technology or " printing " is attached on the micro-cantilever, when micro-cantilever when bending with sample effect, variation has also taken place in the nano particle dot array spacing that is printed on the micro-cantilever back side, and this can cause that also the dot matrix electricity leads or changes in resistance.Detect this electricity and lead or resistance variations, just can detect the bending of cantilever, also just can detect the local distance of needle point-sample accordingly.
The invention has the beneficial effects as follows: use the tunnelling electric conductivity value in metal nano gap to replace reflective laser can simplify AFM device lowering apparatus cost to a great extent as the transducing signal of AFM probe.Simultaneously, further miniaturization of AFM equipment.
Description of drawings
Fig. 1 is structural representation of the present invention.
Embodiment
Below according to appended simplification the sectional view of the micro-micro-cantilever of atomic force that transports based on nano particle dot array of the present invention, describe in detail by preferential embodiment of the present invention.
The micro-micro-cantilever of atomic force shown in the accompanying drawing 1 comprises for surveying the AFM probe tip (1) that sample surfaces rises and falls; A pair of microelectrode (2) is for detection of the electrical quantities of nano particle dot array and as output signal; Nano particle dot array (3) is attached on the AFM semi-girder (4), and simultaneously, Nano silver grain dot matrix (3) is positioned between the microelectrode (2), and its quantum tunneling electricity is led and can be detected by the outsourcing ammeter.
(Micro-Electro-Mechanical Systems, MEMS) technology is processed and is obtained by MEMS (micro electro mechanical system) for above-mentioned AFM probe tip (1), semi-girder (4) and microelectrode (2).Microelectrode (2) preferably uses resistivity low and be difficult for oxidized material and make, for example, and gold.The structure of electrode, size and on semi-girder residing position can be decided according to the actual requirements.Nano silver grain dot matrix (3) can adopt chemistry or physical method preparation, reasonable a kind of method is to adopt the line deposition technique, the nano particle orientated deposition is gone up formation nano particle dot array (3) in semi-girder (4), mode by control nano particle number density can effectively be regulated and control the electron transport character of nano particle dot array (3), thereby reaches the purpose of regulating the micro-cantilever sensitivity of atomic force.As shown in the drawing, suppose that acting force between the atom between atomic force probe needle point and sample (belongs to van der Waals interaction power, Van Der Waals Force) be F, the cross-sectional width that semi-girder (4) is perpendicular to axial direction and highly be respectively b and h, needle point is L to the terminal horizontal range of semi-girder (4), the elastic modulus of semi-girder (4) is E, and then the strain that can obtain semi-girder (4) according to mechanics of materials knowledge is:
The initial resistance of supposing nano particle dot array (3) is R
0, resistance value is R in real time, sensitivity coefficient is K, and following relation is then arranged:
Here during being directed downwards of regulation acting force F on the occasion of, when direction made progress, F was negative value.Under the certain situation of the material category of semi-girder (4) and dimensional structure, the directed force F that the resistance value R of nano particle dot array (3) and probe are subjected to is linear:
R∝F<3>
In addition, according to physics principle, the potential energy U that is caused by the Van der Waals for F that is applied on the probe can be with Landau-Jones (Lennard – Jones) potential energy formulae express:
D is atomic diameter (general 10 in the formula
-10Magnitude, unit is: rice), r is the distance of atomic force probe needle point and sample room, and δ is the potential barrier degree of depth (data fitting obtains by experiment).Can obtain directed force F is:
F＝4δ(-12d
12r
-13+6d
6r
-7)<5>
In conjunction with formula＜3〉and＜5, just can obtain the size of the directed force F that needle point is subjected to by the resistance value R that measures nano particle dot array (3), measurement sensitivity is:
Further, according to formula＜5〉and＜2, can obtain the resistance R of nano particle dot array (3) and atomic force probe needle point and sample room apart from the relation between the r, that is:
Then,
R∝4λR
0δ(-12d
12r
-13+6d
6r
-7)<8>
More enter a ground, known sample surfaces atomic force probe needle point and sample room apart from behind the r, by its whole sample surface of two-dimensional scan, just known the structural information of sample surfaces.As can be seen, design about the micro-micro-cantilever of atomic force, the material category of semi-girder (4) and physical dimension have material impact to the performance of atomic force microprobe, by semi-girder (4) is carried out the performance that appropriate design can be optimized atomic force probe, and the measurement range of probe are regulated and control.In the accompanying drawings, we suppose that the xsect of semi-girder (4) is rectangle.This hypothesis does not have special meaning, can be set fourth as according to actual conditions yet and design.When the making material of semi-girder (4) is silicon nitride (Si
3N
4) time, its elastic modulus is about E=35000MPa, supposes that the physical dimension of semi-girder (4) is: L=200 μ m, h=7 μ m, b=40 μ m.When the sensitivity coefficient K=60 of nano particle dot array (3), the measurement sensitivity of AFM probe is λ ≈ 1.05 * 10
3
More than invention has been described by a preferred embodiment.Therefore, a those of ordinary skill of the present invention does not need creative work to realize it by various schemes in the scope of appended claim, and these do not exceed the scope of protection of present invention.
Claims (10)
1. the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum is characterized in that, comprises an AFM probe tip (1) and is attached on the semi-girder (4); At least one group of nano particle dot array (3) that is attached to semi-girder (4) surface; At least one pair of is positioned at the microelectrode (2) that the semi-girder surface is used for measuring described nano particle dot array (3) resistance value; Nano particle electronics dot matrix and electrode are printed on the micro-cantilever, when micro-cantilever when bending with sample effect, variation has also taken place in the nano particle dot array spacing that is printed on the micro-cantilever back side, causes the variation that the nano particle dot array electricity is led; Detect this electricity and lead variation, just can detect the bending of cantilever, detect the local distance of needle point-sample accordingly.
2. the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 1 is characterized in that, the xsect of semi-girder (4) is that rectangle or circle, ellipse all can; The making material of semi-girder (4) is silicon nitride (Si
3N
4), its elastic modulus is about E=35000 ± 10000MPa, supposes that the physical dimension of semi-girder (4) is: L=200 ± 50 μ m, h=7 ± 4 μ m, b=40 ± 10 μ m.
3. the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 1, it is characterized in that, at least one pair of microelectrode (2) is attached to AFM semi-girder (4) with nano particle dot array (3), nano particle dot array (3) is positioned between the microelectrode (2), and its quantum tunneling electricity is led and can be detected by the external detection instrument.
4. the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 1, it is characterized in that microelectrode (2) uses gold, the structure of electrode and nano particle dot array, size and in the brachium position of residing position on the semi-girder about needle point.
5. the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 1 is characterized in that effectively regulating and control by the mode of control nano particle coverage rate the electron transport character of nano particle dot array (3); Nano particle coverage rate scope is 10～80%, and the diameter range of nano particle is 1～500nm.
6. the application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum comprises an AFM probe tip (1) and is attached on the semi-girder (4); At least one group of nano particle dot array (3) that is attached to semi-girder (4) surface; At least one pair of is positioned at the microelectrode (2) that the semi-girder surface is used for measuring described nano particle dot array (3) resistance value; Nano particle electronics dot matrix and electrode are printed on the micro-cantilever, when micro-cantilever when bending with sample effect, variation has also taken place in the nano particle dot array spacing that is printed on the micro-cantilever back side, causes the variation that the nano particle dot array electricity is led; Detect this electricity and lead variation, just detect the bending of cantilever, detect the local distance of needle point-sample accordingly.
7. the application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 6 is characterized in that in the wherein said nano particle dot array (3) that it is main conduction form that tunnelling transports.
8. the application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 6, the nano particle number density that it is characterized in that wherein said nano particle dot array (3) should be greater than the seepage flow threshold value, makes its resistance (or electricity is led) can be by the external electrical instrument measurement.
9. the application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 6, it is characterized in that wherein said microelectrode (2) has enough strong conductive capability, and can stablize and stick to semi-girder (4) surface, be to have favorable mechanical stability at semi-girder (4) dither, can be as effective electrical signal transfer medium of nano particle dot array (3).
10. the application of the micro-micro-cantilever of atomic force that transports based on the nano particle dot array quantum according to claim 6 is characterized in that wherein said semi-girder (4) is used Si
3N
4The material preparation, its size, shape and structure will have influence on the measurement range of AFM probe, also can have influence on the measurement sensitivity of nano particle dot array (3) simultaneously.The range and the sensitivity that are the AFM probe can be adjusted by the physical dimension that changes semi-girder (4).
Obtain the resistance R of nano particle dot array (3) and atomic force probe needle point and sample room apart from the relation between the r, i.e. R ∝ 4 λ R
0δ (12d
12r
-13+ 6d
6r
-7); Namely
Obtain sample surfaces atomic force probe needle point and sample room apart from behind the r, by its whole sample surface of two-dimensional scan, just know the structural information of sample surfaces;
D is atomic diameter 10
-10Magnitude, unit is rice, r is the distance of atomic force probe needle point and sample room, δ is the potential barrier degree of depth, the cross-sectional width that semi-girder is perpendicular to axial direction and highly be respectively b and h, and needle point is L to the horizontal range of semi-girder end, the elastic modulus of semi-girder is E, and the initial resistance of nano particle dot array is R
0, resistance value is R in real time, sensitivity coefficient is K.
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| CN105444872A (en) * | 2016-01-04 | 2016-03-30 | 南京大学 | Vibration sensor based on nanoparticle lattice quantum transport characteristic |
| WO2017117700A1 (en) * | 2016-01-04 | 2017-07-13 | 南京大学 | Vibration sensor based on nanoparticle lattice quantum transport property |
| CN112305001A (en) * | 2020-10-22 | 2021-02-02 | 清华大学 | In-situ characterization method for scanning electron microscope semiconductor nanowire opto-electro-mechanical coupling characteristics |
| CN115096499A (en) * | 2022-06-01 | 2022-09-23 | 浙江工业大学 | Flexible sensor capable of synchronously measuring airflow pressure and airflow temperature and assembling method and application thereof |
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| CN115096499A (en) * | 2022-06-01 | 2022-09-23 | 浙江工业大学 | Flexible sensor capable of synchronously measuring airflow pressure and airflow temperature and assembling method and application thereof |
| CN115096499B (en) * | 2022-06-01 | 2023-11-14 | 浙江工业大学 | Flexible sensor capable of synchronously measuring air flow pressure and air flow temperature, and assembling method and application thereof |
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