CN103325837B - A kind of carbon-based field-effect transistors and preparation method thereof - Google Patents
A kind of carbon-based field-effect transistors and preparation method thereof Download PDFInfo
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- CN103325837B CN103325837B CN201310247317.0A CN201310247317A CN103325837B CN 103325837 B CN103325837 B CN 103325837B CN 201310247317 A CN201310247317 A CN 201310247317A CN 103325837 B CN103325837 B CN 103325837B
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Abstract
The invention discloses a kind of carbon-based field-effect transistors and preparation method thereof, this carbon-based field-effect transistors comprises: Semiconductor substrate; Be formed at the insulating barrier on Semiconductor substrate; Be formed at the conductive channel on insulating barrier; Be formed at the source electrode on conductive channel two ends and drain electrode; To be formed between source electrode and drain electrode and composite gate dielectric layer on conductive channel; And the gate electrode be formed on composite gate dielectric layer.The invention solves the problem of direct growth gate dielectric membrane with high dielectric coefficient on conductive channel that atomic layer deposition method cannot be formed at carbon-based material, polyvinylphenol had both provided the nuclearing centre of ald, the remarkable decline of carbon-based material carrier mobility can not be caused simultaneously, the decline of device performance can not be caused.
Description
Technical field
The present invention relates to a kind of field-effect transistor and preparation method thereof, a kind of carbon-based field-effect transistors and preparation method thereof, belong to nano-electron technical field.
Background technology
Take material with carbon element as the nanoelectronics of base, especially carbon nano-tube (CarbonNanotube) and Graphene (Graphene) nanoelectronics that is base, is considered to have great application prospect, is rich in the alternative silica-base material of potentiality.Since carbon nano-tube in 1991 and Graphene in 2004 are successfully developed, carbon based electron achieves great development.Electronics based on carbon back has the features such as size is little, speed is fast, low in energy consumption, technique is simple, is subject to people and pays close attention to more and more widely.
The performance of field-effect transistor is subject to the impact of two most important factor, and one is material character, which determines the potentiality of device performance; Another is exactly gate dielectric material, because it directly contacts with raceway groove, so the performance of gate medium directly can affect the performance of whole device, high performance field-effect transistor requires that gate dielectric material has the features such as good insulation preformance, dielectric constant is high, breakdown characteristics is strong.And carbon-based field-effect transistors self important feature is; because conductive carbon material only has one or several atomic layer level thickness; its material is very responsive to the dielectric layer be in contact with it; gate dielectric layer can affect the surface state of material with carbon element usually; new scattering mechanism is introduced in material with carbon element; the remarkable decline of material with carbon element carrier mobility can be caused, cause device performance degeneration.
In the electronic device of carbon-based material, the preparation of high-performance gate medium is the key issue of constraint device performance always.For the growing method of the high-dielectric-coefficient grid medium generally used---ald (ALD), because carbon nano-tube and graphenic surface can not provide dangling bonds to provide nuclearing centre, so directly cannot generate uniform thin layer gate medium on carbon-based material for its growth.In order to gate dielectric layer can be formed by ald, usually before ald, functionalization is carried out to material surface, as DNA (deoxyribonucleic acid) (DNA) molecules functionalize, nitrogen dioxide (NO
2) molecules functionalize, ozone (O
3) functionalization etc.; Or after carbon material surface evaporation or sputtering sedimentation active metal, form oxidized metal by high-temperature oxydation, for ald provides nuclearing centre.But no matter be which kind of processing method, all can introduce extra scattering mechanism to material with carbon element, reduce carrier mobility, make device performance degeneration.
Summary of the invention
(1) technical problem that will solve
The preparation that the present invention is directed to existing high-performance gate medium can introduce extra scattering mechanism to material with carbon element, reduces carrier mobility, makes the deficiency of device performance degeneration, provide a kind of carbon-based field-effect transistors and preparation method thereof.
(2) technical scheme
For achieving the above object, the invention provides a kind of carbon-based field-effect transistors, this carbon-based field-effect transistors comprises: Semiconductor substrate 10; Be formed at the insulating barrier 11 on Semiconductor substrate 10; Be formed at the conductive channel 12 on insulating barrier 11; Be formed at the source electrode 13 on conductive channel 12 two ends and drain electrode 14; To be formed between source electrode 13 and drain electrode 14 and composite gate dielectric layer on conductive channel 12; And the gate electrode 17 be formed on composite gate dielectric layer.
In such scheme, described conductive channel 12 is made up of carbon-based material.Described carbon-based material is carbon nano-tube or Graphene.
In such scheme, described composite gate dielectric layer covers on conductive channel 12, comprise polyvinylphenol organic dielectric layer 15 and metal oxide dielectric film 16, and metal oxide dielectric film 16 is positioned on polyvinylphenol organic dielectric layer 15.
In such scheme, the hydroxyl contained in described polyvinylphenol organic dielectric layer 15 can provide nuclearing centre for atomic layer deposition method growing high-performance dielectric layer, thus mutually compatible with atom layer deposition process, solving Atomic layer deposition method cannot in the problem of carbon-based material surface nucleation.
In such scheme, described metal oxide dielectric film 16 is made up of hafnium oxide, titanium oxide, lanthana, tantalum oxide, zirconia or aluminium oxide, and the thickness of described metal oxide dielectric film 16 is 3 nanometer ~ 30 nanometers.
In such scheme, described gate electrode 17 is positioned on metal oxide dielectric film 16.
For achieving the above object, present invention also offers a kind of method preparing carbon-based field-effect transistors, the method comprises:
Step 1: form insulating barrier, the conductive channel be made up of carbon-based material, source electrode and drain electrode on a semiconductor substrate successively;
Step 2: after utilizing solvent polyvinylphenol to be dissolved, carbon back device is put into polyvinylphenol solution, and carbon back device material surface can be adsorbed and be formed layer of polyethylene base phenol organic film;
Step 3: after carbon back device is taken out from polyvinylphenol solution, utilize atomic layer deposition method on polyvinylphenol organic dielectric layer, deposit layer of metal medium of oxides layer again, thus formation composite gate dielectric layer, described gate dielectric layer comprises polyvinylphenol organic dielectric layer and metal oxide dielectric film;
Step 4: make gate electrode on composite gate dielectric layer paper.
In such scheme, the solvent of the base of polyethylene dissolving described in step 2 phenol comprises deionized water, ethanol, isopropyl alcohol, decane, n-butyl alcohol, toluene, propylene glycol methyl ether acetate or 1-METHYLPYRROLIDONE.
In such scheme, the device of carbon back described in step 2 is placed more than 30 minutes in polyvinylphenol solution.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, carbon-based field-effect transistors provided by the invention and preparation method thereof, solve the problem of direct growth gate dielectric membrane with high dielectric coefficient on conductive channel that atomic layer deposition method cannot be formed at carbon-based material, polyvinylphenol had both provided the nuclearing centre of ald, the remarkable decline of carbon-based material carrier mobility can not be caused simultaneously, the decline of device performance can not be caused.
2, carbon-based field-effect transistors provided by the invention and preparation method thereof; the preparation technology of carbon-based field-effect transistors is simple, with low cost, reliability and reproducible; realization for carbon back high performance device provides a good solution, meets the demand of carbon back scale integrated circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation of the carbon-based field-effect transistors according to the embodiment of the present invention;
Fig. 2 is the method flow diagram preparing carbon-based field-effect transistors according to the embodiment of the present invention;
Fig. 3 is the backgate Ids-Vgs transfer characteristic curve in the carbon-based field-effect transistors according to the embodiment of the present invention before and after gate medium deposition;
Fig. 4 pushes up grid Ids-Vgs transfer characteristic curve in the carbon-based field-effect transistors according to the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structural representation of the carbon-based field-effect transistors according to the embodiment of the present invention, and this carbon-based field-effect transistors comprises Semiconductor substrate 10, be formed at insulating barrier 11 on Semiconductor substrate 10, be formed at conductive channel 12 on insulating barrier 11, be formed at source electrode 13 on conductive channel 12 two ends and drain electrode 14, to be formed between source electrode 13 and drain electrode 14 and composite gate dielectric layer on conductive channel 12 and the gate electrode 17 that is formed on composite gate dielectric layer.
Wherein, conductive channel 12 is made up of carbon-based material, and this carbon-based material is carbon nano-tube or Graphene.Composite gate dielectric layer covers on conductive channel 12, comprise polyvinylphenol organic dielectric layer 15 and metal oxide dielectric film 16, and metal oxide dielectric film 16 is positioned on polyvinylphenol organic dielectric layer 15, described gate electrode 17 is positioned on metal oxide dielectric film 16.
The composite gate dielectric layer be made up of polyvinylphenol organic dielectric layer 15 and metal oxide dielectric film 16, insulation property are good, and dielectric constant is high, resist biography ability by force, make carbon-based field-effect transistors have well top grid modulation capability.The hydroxyl contained in polyvinylphenol organic dielectric layer 15 can provide nuclearing centre for atomic layer deposition method growing high-performance dielectric layer, thus mutually compatible with atom layer deposition process, solving Atomic layer deposition method cannot in the problem of carbon-based material surface nucleation.Metal oxide dielectric film 16 is made up of hafnium oxide, titanium oxide, lanthana, tantalum oxide, zirconia or aluminium oxide, and the thickness of metal oxide dielectric film 16 is 3 nanometer ~ 30 nanometers.
Based on the structural representation of the carbon-based field-effect transistors shown in Fig. 1, Fig. 2 shows the method flow diagram preparing carbon-based field-effect transistors according to the embodiment of the present invention, and the method comprises:
Step 1: form insulating barrier, the conductive channel be made up of carbon-based material, source electrode and drain electrode on a semiconductor substrate successively;
Step 2: after utilizing solvent polyvinylphenol to be dissolved, carbon back device is put into polyvinylphenol solution, and carbon back device material surface can be adsorbed and be formed layer of polyethylene base phenol organic film;
Step 3: after carbon back device is taken out from polyvinylphenol solution, utilize atomic layer deposition method on polyvinylphenol organic dielectric layer, deposit layer of metal medium of oxides layer again, thus formation gate dielectric layer, described gate dielectric layer comprises polyvinylphenol organic dielectric layer and metal oxide dielectric film;
Step 4: make gate electrode on composite gate dielectric layer paper.
Wherein, in step 2, the solvent of polyethylene dissolving base phenol comprises deionized water, ethanol, isopropyl alcohol, decane, n-butyl alcohol, toluene, propylene glycol methyl ether acetate or 1-METHYLPYRROLIDONE.Carbon back device need be placed more than 30 minutes in polyvinylphenol solution.
Further detailed description is done below with 4 preparation methods of embodiment to carbon-based field-effect transistors of the present invention.
Embodiment 1: using Graphene as conductive channel, using Titanium/gold as source-drain electrode, using polyvinylphenol organic dielectric layer and atomic layer deposited hafnium oxide as composite gate dielectric layer, metallic nickel/gold is as the graphene field effect transistor of gate electrode.
Concrete preparation process is as follows:
Step 1: on the grapheme material on 100nm silicon dioxide/body silicon substrate film, after forming source-drain electrode shape by electron beam lithography, thick titanium/gold (Ti/Au=10/50nm) metal of electron beam evaporation one deck 10nm/50nm is as source-drain electrode, then sample is put into acetone to peel off, remove unwanted metal level, obtain source and drain metal electrode;
Step 2: configuration polyvinylphenol solution, is dissolved in polyvinylphenol in propylene glycol methyl ether acetate and forms polyvinylphenol solution, then sample is put into polyvinylphenol solution and soak taking-up after 12 hours, deionized water rinses rear N repeatedly
2dry up;
Step 3: sample is put into atomic layer deposition apparatus cavity, the thick hafnium oxide dielectric layer of growth 10nm;
Step 4: pass through electron beam lithography, form gate electrode figure, by electron beam evaporation evaporation one deck 10nm/50nm thick nickel/gold (Ni/Au=10/50nm) metal level as gate electrode, then sample is put into acetone and peel off, remove unwanted metal level, obtain gate electrode.
Embodiment 2: using carbon nano-tube as conductive channel, using Titanium/gold as source-drain electrode, using polyvinylphenol organic dielectric layer and atomic layer deposited hafnium oxide as grid compound medium layer, metallic nickel/gold is as the graphene field effect transistor of gate electrode.
Concrete steps are similar to Example 1, but use carbon nano-tube as conductive channel.
Embodiment 3: using Titanium/gold as source-drain electrode, polyvinylphenol organic dielectric layer and atomic layer deposited hafnium oxide are as grid compound medium layer, and metallic nickel/gold is as the graphene field effect transistor of gate electrode.
Concrete steps are similar to Example 1, but polyvinylphenol are dissolved in deionized water in step 2 and form polyvinylphenol solution.
Embodiment 4: using Titanium/gold as source-drain electrode, polyvinylphenol organic dielectric layer and ald aluminium oxide are as grid compound medium layer, and metallic nickel/gold is as the graphene field effect transistor of gate electrode.
Concrete steps are similar to Example 1, but step 3 is instead by the thick alumina medium layer of ald growth 10nm.
The carbon-based field-effect transistors prepared by above-mentioned 4 embodiments is owing to using the Seed Layer of polyvinylphenol organic dielectric layer as ald gate dielectric layer of carbon-based material surface self-organization, the electric property of device can not significantly be declined, as shown in Figure 3, Fig. 3 is the backgate device transfer characteristic curve in the carbon-based field-effect transistors according to the embodiment of the present invention before and after gate medium deposition, from this Fig. 3, the deposition process of gate medium can't cause the degeneration of device electrology characteristic.
Fig. 4 pushes up grid Ids-Vgs transfer characteristic curve in the carbon-based field-effect transistors according to the embodiment of the present invention.Along the device transfer characteristic curve positive direction of Ids axle is respectively under 0.1V, 0.5V and 1V drain voltage, as seen under different drain voltages, device transfer characteristic is good about dirac point-symmetry property, and transistor top grid grid-control characteristic is good.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a carbon-based field-effect transistors, is characterized in that, this carbon-based field-effect transistors comprises:
Semiconductor substrate (10);
Be formed at the insulating barrier (11) on Semiconductor substrate (10);
Be formed at the conductive channel (12) on insulating barrier (11);
Be formed at the source electrode (13) on conductive channel (12) two ends and drain electrode (14);
To be formed between source electrode (13) and drain electrode (14) and composite gate dielectric layer on conductive channel (12); And
Be formed at the gate electrode (17) on composite gate dielectric layer;
Wherein, described composite gate dielectric layer covers on conductive channel (12), comprise polyvinylphenol organic dielectric layer (15) and metal oxide dielectric film (16), and metal oxide dielectric film (16) is positioned on polyvinylphenol organic dielectric layer (15), the hydroxyl contained in described polyvinylphenol organic dielectric layer (15) can provide nuclearing centre for atomic layer deposition method growing high-performance dielectric layer, thus mutually compatible with atom layer deposition process, solving Atomic layer deposition method cannot in the problem of carbon-based material surface nucleation.
2. carbon-based field-effect transistors according to claim 1, is characterized in that, described conductive channel (12) is made up of carbon-based material.
3. carbon-based field-effect transistors according to claim 2, is characterized in that, described carbon-based material is carbon nano-tube or Graphene.
4. carbon-based field-effect transistors according to claim 1, it is characterized in that, described metal oxide dielectric film (16) is made up of hafnium oxide, titanium oxide, lanthana, tantalum oxide, zirconia or aluminium oxide, and the thickness of described metal oxide dielectric film (16) is 3 nanometer ~ 30 nanometers.
5. carbon-based field-effect transistors according to claim 1, is characterized in that, described gate electrode (17) is positioned on metal oxide dielectric film (16).
6. prepare a method for the carbon-based field-effect transistors according to any one of claim 1 to 5, it is characterized in that, the method comprises:
Step 1: form insulating barrier, the conductive channel be made up of carbon-based material, source electrode and drain electrode on a semiconductor substrate successively;
Step 2: after utilizing solvent polyvinylphenol to be dissolved, carbon back device is put into polyvinylphenol solution, and carbon back device material surface can be adsorbed and be formed layer of polyethylene base phenol organic film;
Step 3: after carbon back device is taken out from polyvinylphenol solution, utilize atomic layer deposition method on polyvinylphenol organic dielectric layer, deposit layer of metal medium of oxides layer again, thus formation composite gate dielectric layer, described gate dielectric layer comprises polyvinylphenol organic dielectric layer and metal oxide dielectric film;
Step 4: make gate electrode on composite gate dielectric layer paper.
7. the method preparing carbon-based field-effect transistors according to claim 6, it is characterized in that, the solvent of the base of polyethylene dissolving described in step 2 phenol comprises deionized water, ethanol, isopropyl alcohol, decane, n-butyl alcohol, toluene, propylene glycol methyl ether acetate or 1-METHYLPYRROLIDONE.
8. the method preparing carbon-based field-effect transistors according to claim 6, is characterized in that, the device of carbon back described in step 2 is placed more than 30 minutes in polyvinylphenol solution.
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| CN101777583A (en) * | 2010-02-05 | 2010-07-14 | 电子科技大学 | Graphene field effect transistor |
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