CN103323466B - Solar silicon wafers stria high-precision detection system - Google Patents
Solar silicon wafers stria high-precision detection system Download PDFInfo
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- CN103323466B CN103323466B CN201210073886.3A CN201210073886A CN103323466B CN 103323466 B CN103323466 B CN 103323466B CN 201210073886 A CN201210073886 A CN 201210073886A CN 103323466 B CN103323466 B CN 103323466B
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Abstract
The invention discloses a kind of solar silicon wafers stria high-precision detection system, silicon wafer conveying mechanism drives silicon chip motion, detection dot projection is measured to silicon chip surface its surface elevation information by laser triangle displacement sensor, position of silicon wafer induction installation can be responded to silicon chip and is positioned at laser triangle displacement sensor detection position and is messaging in data collecting card, data collecting card gathers the metrical information of laser triangle displacement sensor transmission and exports data to processor, the detection hot spot of laser triangle displacement sensor is the ellipse light spot that long axis direction and short-axis direction parallel with silicon chip stria direction and silicon chip direction of motion are consistent, this invention greatly reduces the roughness of silicon chip surface to the interference of measuring stria, make to measure only responsive to stria, effectively improve precision and the accuracy of stria measurement, achieve the high speed detection that silicon chip stria is measured.
Description
Technical field
The present invention relates to a kind of solar silicon wafers detection system, particularly a kind of solar silicon wafers stria high-precision detection system.
Background technology
In solar photovoltaic industry technology chain, silicon chip stria defect is the irregular defect of a kind of silicon chip surface introduced in slice process, comprise groove (groove), step (step), the complex defect etc. of waveform (wave) and these three kinds of defects.At present this field generally adopts wire saw slicing technique, silicon butt is cut into the certain silicon chip of thickness, and the method has that cost is low, production capacity advantages of higher.But the material of scroll saw itself can wear and tear in process of production, the situation of the uneven or wire jumper of scroll saw thickness can be produced, the stria defect parallel with scroll saw can be left at the silicon chip surface cut out thus.
Stria defect can produce a series of impact to the subsequent technique of silicon chip: first: increase the breakage rate in technological process; Second: cause PN defect, thus reduce electrical performance of cell in blocks; 3rd: after plasma reinforced chemical meteorology deposition (PEVCD) technique, stria fault location color exception, affects resultant battery sheet outward appearance; 4th: larger stria affects cell piece grid line conduction.Therefore the detection of silicon chip stria is a big event of Si wafer quality blank pipe.
Mainly contain three class stria detection techniques at present: the first: by high-resolution imaging way, identify the position of stria defect, the method can with the detection of other silicon chips as outward appearance detection, dimensional measurement etc. merge measurement, but the method can not realize quantitative measurment, therefore grade classification can not be carried out to the stria detected.The second: adopt High Precision Laser Displacement Sensor Based on Triangulation, quantitative measurment goes out the elevation information of silicon chip surface and the thickness information of silicon chip, the width of stria, the degree of depth (or height) and grade classification is determined again by software algorithm, but, detection hot spot due to common laser triangle displacement sensor is circular, very responsive to the roughness on solar energy-level silicon wafer surface, the stria height measured or depth information are often submerged in hackly " in the noise signal " of silicon chip surface, because which limit measuring accuracy and grade classification precision.The third: the measuring surface form instrument adopting line laser illuminator and array image sensor composition.This technology is the distortion of second method, and measuring accuracy is subject to the impact of silicon chip surface roughness equally.
Summary of the invention
In order to make up above deficiency, the invention provides a kind of solar silicon wafers stria high-precision detection system, this solar silicon wafers stria high-precision detection system significantly reduces the roughness of silicon chip surface to the interference of measuring stria, make to measure only responsive to stria, effectively improve precision and the accuracy of stria measurement.
The present invention in order to the technical scheme solving its technical matters and adopt is: a kind of solar silicon wafers stria high-precision detection system, comprise silicon wafer conveying mechanism, position of silicon wafer induction installation, detection module, data collecting card and processor, described silicon wafer conveying mechanism can drive silicon wafer linear to move, detection module is provided with at least one laser triangle displacement sensor, detection dot projection is measured to silicon chip surface its surface elevation information by laser triangle displacement sensor, position of silicon wafer induction installation can be responded to silicon chip and is positioned at laser triangle displacement sensor detection position and is messaging in data collecting card, data collecting card gathers the metrical information of laser triangle displacement sensor transmission and exports data to processor, during work, silicon wafer conveying mechanism conveying silicon chip is to the detection position of laser triangle displacement sensor, sensor sensing transmits a signal to data collecting card when silicon chip arrives this position, multiple passage A/D after data collecting card receives this signal in it start the data that parallel acquisition laser triangle displacement sensor exports, processor (being generally data processing software) calculates the silicon chip surface altitude information collected, finally count the stria number of every sheet silicon chip, the type of every bar stria, width, the degree of depth and judge the quality grade of each silicon chip according to these results, the detection hot spot of described laser triangle displacement sensor is ellipse light spot, the long axis direction of this ellipse light spot is parallel with silicon chip stria direction, the short-axis direction of ellipse light spot is consistent with silicon chip direction of motion, the long axis direction of strip ellipse detection hot spot is parallel with stria direction, this strip is measured hot spot and is measured by the integral mean along stria direction, effectively can reduce the interference of sample surfaces roughness to measuring accuracy, make to measure only responsive to stria, the short-axis direction of oval detection hot spot is consistent with sample direction of motion, can make to measure, to stria, there is higher spatial resolution, make the result measured more stable.
As the further improvement of invention, described silicon wafer conveying mechanism adopts non-anti-oscillating mode connecting gear, laser triangle displacement sensor longitudinally on symmetrically distributions is just right with position of silicon wafer in the upper and lower both sides of silicon chip, laser triangle displacement sensor is for measuring the altitude information on the upper and lower surface of silicon chip, if the surving coordinate at laser triangulation instrument place is (x, y), the upper and lower surface elevation information of silicon chip that upper and lower laser triangulation instrument records is y
up(x) and y
down(x); If the local coordinate at travelling belt upper surface place is (x ', y '), the upper and lower surface of silicon chip is y ' relative to the elevation information of this coordinate system
up(x) and y '
down(x); If travelling belt local coordinate is y relative to the vibration of laser triangulation instrument surving coordinate
up(x).There is following relation in each numerical value:
th(x)＝y’
up(x)-y’
down(x)
y
up(x)＝y
vib(x)+y’
up(x)
y
down(x)＝y
vib(x)+y’
down(x)
Wherein th (x) is silicon wafer thickness information, subtracts the 3rd formula by the second formula, and with reference to the first formula, can obtain:
th(x)＝y
up(x)-y
down(x)
Above formula illustrates that the upper and lower surface elevation information of silicon chip recorded by upper and lower laser triangulation instrument is y
up(x), y
downx (), can eliminate vibration to the impact of measuring after computing.
As the further improvement of invention, described silicon wafer conveying mechanism adopts antivibration ejector half connecting gear, and laser triangle displacement sensor is right against the side of silicon chip silicon wafer conveying mechanism dorsad.
As the further improvement of invention, the mode that described silicon wafer conveying mechanism adopts non-anti-oscillating mode connecting gear and antivibration ejector half connecting gear to combine, antivibration ejector half connecting gear can capture silicon chip from non-anti-oscillating mode connecting gear, then by the measurement of laser triangle displacement sensor, put back to again on non-anti-oscillating mode connecting gear and carry out continuation transmission, silicon chip is transported near laser triangle displacement sensor by non-shock type conveyer, the mechanical arm sucker of antivibration ejector half connecting gear band sucker captures silicon chip, then reposefully silicon chip is transported to the detection zone of laser triangle displacement sensor, after silicon chip has been detected by the detection zone of laser triangle displacement sensor, silicon chip is placed on down on one non-anti-vibration shape conveyer and is transported to next procedure by mechanical arm.
As the further improvement of invention, some laser triangle displacement sensor edges are ordered state distribution at equal intervals perpendicular to silicon chip direction of motion, this kind of structure composition multi-channel measurement mode, the degree of depth of general stria is not identical on silicon chip, some stria is deep in silicon chip both sides, some stria only may appear in the side of silicon chip, and some stria possibility side is dark and opposite side is shallow.Adopt multi-channel parallel metering system effectively can reduce the situations such as undetected, flase drop, false retrieval, greatly improve accuracy in detection.
As the further improvement of invention, detection module is also provided with transverse adjusting mechanism and height adjuster, wherein transverse adjusting mechanism comprises knob, screw rod and firm banking, screw axial is vertical with silicon chip direction of motion, knob drives screw rod to rotate, screw rod and the fixing end, are connected, screw rod promotes holder transverse shifting, height adjuster comprises crossbeam and cross beam support frame, crossbeam is positioned on cross beam support frame, cross beam support frame can regulate relative to the longitudinal direction height of silicon wafer conveying mechanism, laser triangle displacement sensor is fixed on crossbeam, by adjustment transverse adjusting mechanism, the horizontal spacing of alterable laser triangle displacement sensor, with the measurement of compatible different size silicon chip, by adjusting the height of height adjuster, each laser triangle displacement sensor can be made to be operated near range mid point.
As the further improvement of invention, also be provided with slide block and spacing angle, described crossbeam is provided with the guide rail along silicon chip direction of motion, this slide block engagement sleeves is located on guide rail, the locating rack of laser triangle displacement sensor is fixedly arranged on slide block, the holder of spacing angle and transverse adjusting mechanism is connected, and play the guiding role and position-limiting action when being respectively used to the adjustment of laser triangle displacement sensor lateral attitude.
As the further improvement of invention, detection module is also provided with micromatic setting, and micromatic setting is fixedly arranged on slide block, and triangular displacement sensor is fixed on micromatic setting, micromatic setting can be realized by adjustment bolt, and micromatic setting makes the hot spot of upper and lower laser aim at.
As the further improvement of invention, silicon wafer conveying mechanism is also provided with the diversion trench that width can adjust, silicon chip be able to pass through along diversion trench length direction, described diversion trench is bell mouth shape along the entrance point of silicon chip direction of motion, silicon chip position after diversion trench is corrected, its width can adjust the silicon chip that can adapt to different size, and described silicon chip alignment means act as and corrects position of silicon wafer, but is not limited to this form.
As the further improvement of invention, described laser triangle displacement sensor is drive controller class and the one not in tape controller class, laser triangle displacement sensor selects the structure of not provided with processor, each laser triangle displacement sensor, all with independent data-transformation facility, can simplify system and reduce system cost; Laser triangle displacement sensor band high-speed digital communication mode, can effectively eliminate the noise effect produced in D/A and A/D process; Laser triangle displacement sensor band can synchronizing function, makes each detecting head can synchronizing detection silicon chip surface elevation information; Described data acquisition cassette tape synchronous acquisition function.
Advantageous Effects of the present invention is: the present invention adopts the laser triangle displacement sensor with oval detection hot spot, the long axis direction of strip ellipse detection hot spot effectively can reduce the interference of sample surfaces roughness to measuring accuracy with stria direction is parallel, and the short-axis direction of oval detection hot spot unanimously can make to measure with sample direction of motion has higher spatial resolution to stria; This detection system significantly reduces the roughness of silicon chip surface to the interference of measuring stria, makes to measure only responsive to stria, effectively improves precision and the accuracy of stria measurement, achieves the high speed detection that silicon chip stria is measured.
Accompanying drawing explanation
Fig. 1 is detection module structural principle front view of the present invention;
Fig. 2 is detection module structural principle stereographic map of the present invention;
Fig. 3 is the schematic perspective view of invention;
Fig. 4 is data acquisition system (DAS) schematic diagram of the present invention;
Fig. 5 is that prior art adopts the circular stria groove defect data detecting facula measurement and go out;
Fig. 6 is the stria groove defect data that this employing one-sided ellipse detection facula measurement goes out;
Fig. 7 is this employing non-anti-oscillating mode connecting gear and the silicon wafer thickness data measured when selecting laser triangle displacement sensor to be symmetrically distributed in silicon chip structure on two sides to be measured;
Fig. 8 is the present invention's laser triangle displacement sensor one-sided measurement front view when adopting antivibration connecting gear;
Fig. 9 is the present invention's laser triangle displacement sensor one-sided measurement vertical view when adopting antivibration connecting gear
Figure 10 is the present invention's laser triangle displacement sensor one-sided measurement data acquisition system when adopting antivibration connecting gear;
Figure 11 is the schematic diagram of the mode that the present invention adopts non-anti-oscillating mode connecting gear and antivibration ejector half connecting gear to combine.
Embodiment
Embodiment: a kind of solar silicon wafers stria high-precision detection system, comprise silicon wafer conveying mechanism 1, position of silicon wafer induction installation 2, detection module, data collecting card 17 and processor 18, described silicon wafer conveying mechanism 1 can drive silicon wafer linear to move, detection module is provided with at least one laser triangle displacement sensor 3, detection dot projection is measured to silicon chip surface its surface elevation information by laser triangle displacement sensor 3, position of silicon wafer induction installation 2 can be responded to silicon chip and be positioned at laser triangle displacement sensor 3 and detect position and be messaging in data collecting card 17, data collecting card 17 gathers the metrical information of laser triangle displacement sensor 3 transmission and exports data to processor 18, during work, silicon wafer conveying mechanism 1 carries silicon chip to the detection position of laser triangle displacement sensor 3, sensor sensing transmits a signal to data collecting card 17 when silicon chip 4 arrives this position, multiple passage A/D after data collecting card 17 receives this signal in it start the data that parallel acquisition laser triangle displacement sensor 3 exports, processor 18 (being generally data processing software) calculates the silicon chip surface altitude information collected, finally count the stria number of every sheet silicon chip, the type of every bar stria, width, the degree of depth and judge the quality grade of each silicon chip according to these results, the detection hot spot of described laser triangle displacement sensor 3 is ellipse light spot 31, the long axis direction of this ellipse light spot 31 is parallel with silicon chip stria direction, the short-axis direction of ellipse light spot 31 is consistent with silicon chip direction of motion, the long axis direction of strip ellipse detection hot spot is parallel with stria direction, this strip is measured hot spot and is measured by the integral mean along stria direction, effectively can reduce the interference of sample surfaces roughness to measuring accuracy, make to measure only responsive to stria, the short-axis direction of oval detection hot spot is consistent with sample direction of motion, can make to measure, to stria, there is higher spatial resolution, make the result measured more stable.
Described silicon wafer conveying mechanism 1 adopts non-anti-oscillating mode connecting gear, laser triangle displacement sensor 3 longitudinally on symmetrically distributions is just right with position of silicon wafer in the upper and lower both sides of silicon chip, laser triangle displacement sensor 3 is for measuring the altitude information on the upper and lower surface of silicon chip, if the surving coordinate at laser triangulation instrument place is (x, y), the upper and lower surface elevation information of silicon chip that upper and lower laser triangulation instrument records is y
up(x) and y
down(x); If the local coordinate at travelling belt upper surface place is (x ', y '), the upper and lower surface of silicon chip is y ' relative to the elevation information of this coordinate system
up(x) and y '
down(x); If travelling belt local coordinate relative to the vibration of laser triangulation instrument surving coordinate is
y
up(x)。There is following relation in each numerical value:
th(x)＝y’
up(x)-y’
down(x)
y
up(x)＝y
vib(x)+y’
up(x)
y
down(x)＝y
vib(x)+y’
down(x)
Wherein th (x) is silicon wafer thickness information, subtracts the 3rd formula by the second formula, and with reference to the first formula, can obtain:
th(x)＝y
up(x)-y
down(x)
Above formula illustrates that the upper and lower surface elevation information of silicon chip recorded by upper and lower laser triangulation instrument is y
up(x), y
downx (), can eliminate vibration to the impact of measuring after computing.
Described silicon wafer conveying mechanism 1 adopts antivibration ejector half connecting gear, and laser triangle displacement sensor 3 is right against the side of silicon chip silicon wafer conveying mechanism 1 dorsad.
The mode that described silicon wafer conveying mechanism 1 adopts non-anti-oscillating mode connecting gear and antivibration ejector half connecting gear to combine, antivibration ejector half connecting gear can capture silicon chip from non-anti-oscillating mode connecting gear and make it carry out continuation transmission by putting back to non-anti-oscillating mode connecting gear after the measurement of laser triangle displacement sensor again, silicon chip is transported near laser triangle displacement sensor 3 by non-shock type conveyer, the mechanical arm sucker of antivibration ejector half connecting gear band sucker captures silicon chip, then reposefully silicon chip is transported to the detection zone of laser triangle displacement sensor 3; After silicon chip has been detected by the detection zone of laser triangle displacement sensor 3, silicon chip is placed on down on one non-anti-vibration shape conveyer and is transported to next procedure by mechanical arm.
Described some laser triangle displacement sensors 3 are along perpendicular to the distribution in ordered state at equal intervals of silicon chip direction of motion, this kind of structure composition multi-channel measurement mode, the degree of depth of general stria is not identical on silicon chip, some stria is deep in silicon chip both sides, some stria only may appear in the side of silicon chip, and some stria possibility side is dark and opposite side is shallow.Adopt multi-channel parallel metering system effectively can reduce the situations such as undetected, flase drop, false retrieval, greatly improve accuracy in detection.
Described detection module is also provided with transverse adjusting mechanism and height adjuster, wherein transverse adjusting mechanism comprises knob 5, screw rod 6 and firm banking 7, screw rod 6 is axially vertical with silicon chip direction of motion, knob 5 drives screw rod 6 to rotate, screw rod 6 is connected firm banking 7, screw rod promotes firm banking transverse shifting, height adjuster comprises crossbeam 8 and cross beam support frame 9, crossbeam 8 is positioned on cross beam support frame 9, cross beam support frame 9 can regulate relative to the longitudinal direction height of silicon wafer conveying mechanism 1, laser triangle displacement sensor 3 is fixed on crossbeam 8, by adjustment transverse adjusting mechanism, the horizontal spacing of alterable laser triangle displacement sensor 3, with the measurement of compatible different size silicon chip, by adjusting the height of height adjuster, each laser triangle displacement sensor 3 can be made to be operated near range mid point.
Also be provided with slide block 12 and spacing angle 13, described crossbeam 8 is provided with the guide rail along silicon chip direction of motion, this slide block 12 engagement sleeves is located on guide rail, the locating rack of laser triangle displacement sensor 3 is fixedly arranged on slide block 12, spacing angle 13 is connected with the holder of transverse adjusting mechanism, play the guiding role and position-limiting action when being respectively used to the adjustment of laser triangle displacement sensor 3 lateral attitude.
Described detection module is also provided with micromatic setting, micromatic setting is fixedly arranged on slide block 12, laser triangle displacement sensor is fixed on micromatic setting, and micromatic setting can be realized by adjustment bolt, and micromatic setting makes the hot spot of upper and lower laser triangle displacement sensor 3 aim at.
Described silicon wafer conveying mechanism 1 is also provided with the diversion trench 15 that width can adjust, silicon chip be able to pass through along diversion trench 15 length direction, described diversion trench 15 is bell mouth shape along the entrance point of silicon chip direction of motion, silicon chip is corrected position after diversion trench 15, its width can adjust the silicon chip that can adapt to different size, described silicon chip alignment means act as and corrects position of silicon wafer, but is not limited to this form.
Described laser triangle displacement sensor is drive controller class and the one not in tape controller class, laser triangle displacement sensor 3 selects the structure of not provided with processor 18, each laser triangle displacement sensor 3, all with independent data-transformation facility, can simplify system and reduce system cost; Laser triangle displacement sensor band high-speed digital communication mode, can effectively eliminate the noise effect produced in D/A and A/D process; Laser triangle displacement sensor band can synchronizing function, makes each detecting head can synchronizing detection silicon chip surface elevation information; Described data collecting card 17 is with synchronous acquisition function.
Claims (7)
1. a solar silicon wafers stria high-precision detection system, comprise silicon wafer conveying mechanism (1), position of silicon wafer induction installation (2), detection module, data collecting card (17) and processor (18), described silicon wafer conveying mechanism (1) can drive silicon wafer linear to move, detection module is provided with at least one laser triangle displacement sensor (3), detection dot projection is measured to silicon chip surface its surface elevation information by laser triangle displacement sensor (3), position of silicon wafer induction installation (2) can be responded to silicon chip and is positioned at laser triangle displacement sensor (3) detection position and is messaging in data collecting card (17), the metrical information that data collecting card (17) collection laser triangle displacement sensor (3) transmits also exports data to processor (18), it is characterized in that: the detection hot spot of described laser triangle displacement sensor (3) is ellipse light spot (31), the long axis direction of this ellipse light spot (31) is parallel with silicon chip stria direction, the short-axis direction of ellipse light spot (31) is consistent with silicon chip direction of motion, described silicon wafer conveying mechanism (1) adopts non-anti-oscillating mode connecting gear, in laser triangle displacement sensor (3) longitudinal direction symmetrically distributions in the upper and lower both sides of silicon chip and with position of silicon wafer just to or silicon wafer conveying mechanism (1) adopt antivibration ejector half connecting gear, laser triangle displacement sensor (3) be right against silicon chip dorsad silicon wafer conveying mechanism (1) side also or silicon wafer conveying mechanism (1) mode that adopts non-anti-oscillating mode connecting gear and antivibration ejector half connecting gear to combine, antivibration ejector half connecting gear can from non-anti-oscillating mode connecting gear capture silicon chip put back to again non-anti-oscillating mode connecting gear carry out continuation transmission.
2. solar silicon wafers stria high-precision detection system as claimed in claim 1, is characterized in that: some laser triangle displacement sensors (3) edge is ordered state distribution at equal intervals perpendicular to silicon chip direction of motion.
3. solar silicon wafers stria high-precision detection system as claimed in claim 2, it is characterized in that: detection module is also provided with transverse adjusting mechanism and height adjuster, wherein transverse adjusting mechanism comprises knob (5), screw rod (6) and firm banking (7), screw rod (6) is axially vertical with silicon chip direction of motion, knob (5) drives screw rod (6) to rotate, screw rod (6) and firm banking (7) are connected, height adjuster comprises crossbeam (8) and cross beam support frame (9), crossbeam (8) is positioned on cross beam support frame (9), cross beam support frame (9) can regulate relative to the longitudinal direction height of silicon wafer conveying mechanism (1), laser triangle displacement sensor (3) is fixed on crossbeam (8).
4. solar silicon wafers stria high-precision detection system as claimed in claim 3, it is characterized in that: be also provided with slide block (12) and spacing angle (13), described crossbeam (8) is provided with the guide rail along silicon chip direction of motion, this slide block (12) engagement sleeves is located on guide rail, the locating rack of laser triangle displacement sensor (3) is fixedly arranged on slide block (12), and spacing angle (13) are connected with the holder of transverse adjusting mechanism.
5. solar silicon wafers stria high-precision detection system as claimed in claim 4, it is characterized in that: detection module is also provided with micromatic setting, micromatic setting is fixedly arranged on slide block (12), and laser triangle displacement sensor is fixed on micromatic setting.
6. solar silicon wafers stria high-precision detection system as claimed in claim 1, it is characterized in that: silicon wafer conveying mechanism (1) is also provided with the diversion trench (15) that width can adjust, silicon chip be able to pass through along diversion trench (15) length direction, and described diversion trench (15) is bell mouth shape along the entrance point of silicon chip direction of motion.
7. as profit requires the solar silicon wafers stria high-precision detection system as described in 1, it is characterized in that: described laser triangle displacement sensor (3) is drive controller class and the one not in tape controller class; Laser triangle displacement sensor (3) band high-speed digital communication mode; Laser triangle displacement sensor (3) band can synchronizing function; Described data collecting card (17) band synchronous acquisition function.
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| CN105355578B (en) * | 2015-10-13 | 2018-05-15 | 中国电子科技集团公司第四十八研究所 | A kind of solar silicon wafers stria detection device |
| CN106571314B (en) * | 2016-11-11 | 2019-12-20 | 中国电子科技集团公司第四十八研究所 | Silicon wafer line mark detection device and detection method |
| CN106643626A (en) * | 2016-12-27 | 2017-05-10 | 烟台拓伟智能科技股份有限公司 | Food surface contour measurement system |
| CN106903073B (en) * | 2017-03-20 | 2022-08-12 | 常州亿晶光电科技有限公司 | Automatic silicon wafer separation equipment |
| CN108123011A (en) * | 2018-01-11 | 2018-06-05 | 温州大学激光与光电智能制造研究院 | Laser making herbs into wool equipment and its method |
| CN108387518A (en) * | 2018-03-22 | 2018-08-10 | 南京图思灵智能科技有限责任公司 | The slice handling system and pathological section scanner of pallet-free frame lifting gear |
| CN113232179B (en) * | 2021-04-30 | 2022-07-19 | 苏州协鑫光伏科技有限公司 | Filtering system and filtering method for misjudging silicon wafer dust as line mark |
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