CN103320763A - 金属氯化物气体产生装置、氢化物气相沉积装置以及氮化物半导体模板的制造方法 - Google Patents
金属氯化物气体产生装置、氢化物气相沉积装置以及氮化物半导体模板的制造方法 Download PDFInfo
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- CN103320763A CN103320763A CN2013100777646A CN201310077764A CN103320763A CN 103320763 A CN103320763 A CN 103320763A CN 2013100777646 A CN2013100777646 A CN 2013100777646A CN 201310077764 A CN201310077764 A CN 201310077764A CN 103320763 A CN103320763 A CN 103320763A
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- gas introduction
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- nitride
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 230000012010 growth Effects 0.000 title claims abstract description 57
- 229910001510 metal chloride Inorganic materials 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 39
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 191
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000004308 accommodation Effects 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 239000000460 chlorine Substances 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 10
- 150000004678 hydrides Chemical class 0.000 claims description 9
- 230000005764 inhibitory process Effects 0.000 claims description 9
- 230000008676 import Effects 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 230000033228 biological regulation Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 36
- 229910052594 sapphire Inorganic materials 0.000 abstract description 22
- 239000010980 sapphire Substances 0.000 abstract description 22
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000002156 mixing Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 48
- 230000000694 effects Effects 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 25
- 238000002441 X-ray diffraction Methods 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 23
- 229910052739 hydrogen Inorganic materials 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 17
- 239000010453 quartz Substances 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 15
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 14
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 14
- 238000004458 analytical method Methods 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- 208000031481 Pathologic Constriction Diseases 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000036262 stenosis Effects 0.000 description 2
- 208000037804 stenosis Diseases 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 208000019423 liver disease Diseases 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 210000000713 mesentery Anatomy 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2012-063514 | 2012-03-21 | ||
JP2012063514 | 2012-03-21 | ||
JP2012280482A JP6091886B2 (ja) | 2012-03-21 | 2012-12-25 | 金属塩化物ガス発生装置、ハイドライド気相成長装置及び窒化物半導体テンプレートの製造方法 |
JP2012-280482 | 2012-12-25 |
Publications (1)
Publication Number | Publication Date |
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CN103320763A true CN103320763A (zh) | 2013-09-25 |
Family
ID=49189796
Family Applications (1)
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CN2013100777646A Pending CN103320763A (zh) | 2012-03-21 | 2013-03-12 | 金属氯化物气体产生装置、氢化物气相沉积装置以及氮化物半导体模板的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9359692B2 (zh) |
JP (1) | JP6091886B2 (zh) |
CN (1) | CN103320763A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106688079A (zh) * | 2014-09-03 | 2017-05-17 | 住友化学株式会社 | 半导体制造装置以及半导体制造方法 |
CN111133133A (zh) * | 2017-09-25 | 2020-05-08 | 国立大学法人名古屋大学 | 气相生长装置 |
CN115087766A (zh) * | 2020-02-14 | 2022-09-20 | 国立大学法人东海国立大学机构 | 氮化镓的气相生长装置及制造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6345497B2 (ja) * | 2014-06-16 | 2018-06-20 | 古河機械金属株式会社 | ガス流通管の取付具及び気相成長装置 |
JP6349205B2 (ja) * | 2014-09-05 | 2018-06-27 | 住友化学株式会社 | 半導体製造装置および半導体製造方法 |
CN105986313B (zh) * | 2015-01-31 | 2018-06-01 | 东莞市中镓半导体科技有限公司 | 一种镓源自动补给及回收装置 |
JP7066829B2 (ja) * | 2018-03-28 | 2022-05-13 | 株式会社Kokusai Electric | 基板処理装置、ガスノズルおよび半導体装置の製造方法 |
US11535951B1 (en) * | 2018-06-06 | 2022-12-27 | United States Of America As Represented By The Secretary Of The Air Force | Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment |
JP7491683B2 (ja) | 2019-11-22 | 2024-05-28 | 住友化学株式会社 | Iii族窒化物積層基板および半導体発光素子 |
JP7429522B2 (ja) | 2019-11-22 | 2024-02-08 | 住友化学株式会社 | Iii族窒化物積層基板および半導体素子 |
CN114134572B (zh) * | 2021-11-12 | 2024-06-21 | 中国电子科技集团公司第四十六研究所 | 一种hvpe法生长氮化铝的辅助加热体装置及方法 |
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JPH07147248A (ja) * | 1993-11-22 | 1995-06-06 | Komatsu Electron Metals Co Ltd | Cvd装置のガス吹き出しノズル |
JP2004296639A (ja) * | 2003-03-26 | 2004-10-21 | Furukawa Co Ltd | 気相成長装置 |
JP2005223243A (ja) * | 2004-02-09 | 2005-08-18 | Hitachi Cable Ltd | Iii族窒化物系半導体結晶の製造方法及びハイドライド気相成長装置 |
JP2005303168A (ja) * | 2004-04-15 | 2005-10-27 | Furukawa Co Ltd | 気相成長装置 |
CN101060102A (zh) * | 2006-04-21 | 2007-10-24 | 日立电线株式会社 | 氮化物半导体衬底、其制法及氮化物半导体发光器件用外延衬底 |
US20090173951A1 (en) * | 2006-07-26 | 2009-07-09 | Fujitsu Limited | COMPOUND SEMICONDUCTOR DEVICE USING SiC SUBSTRATE AND ITS MANUFACTURE |
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2012
- 2012-12-25 JP JP2012280482A patent/JP6091886B2/ja active Active
-
2013
- 2013-03-11 US US13/794,522 patent/US9359692B2/en active Active
- 2013-03-12 CN CN2013100777646A patent/CN103320763A/zh active Pending
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JPH07147248A (ja) * | 1993-11-22 | 1995-06-06 | Komatsu Electron Metals Co Ltd | Cvd装置のガス吹き出しノズル |
JP2004296639A (ja) * | 2003-03-26 | 2004-10-21 | Furukawa Co Ltd | 気相成長装置 |
JP2005223243A (ja) * | 2004-02-09 | 2005-08-18 | Hitachi Cable Ltd | Iii族窒化物系半導体結晶の製造方法及びハイドライド気相成長装置 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106688079A (zh) * | 2014-09-03 | 2017-05-17 | 住友化学株式会社 | 半导体制造装置以及半导体制造方法 |
CN106688079B (zh) * | 2014-09-03 | 2019-06-14 | 住友化学株式会社 | 半导体制造装置以及半导体制造方法 |
CN111133133A (zh) * | 2017-09-25 | 2020-05-08 | 国立大学法人名古屋大学 | 气相生长装置 |
CN111133133B (zh) * | 2017-09-25 | 2022-03-18 | 国立大学法人名古屋大学 | 气相生长装置及其控制方法 |
US11591717B2 (en) | 2017-09-25 | 2023-02-28 | National University Corporation Nagoya University | Vapor phase epitaxial growth device |
US12009206B2 (en) | 2017-09-25 | 2024-06-11 | National University Corporation Nagoya University | Vapor phase epitaxial growth device |
CN115087766A (zh) * | 2020-02-14 | 2022-09-20 | 国立大学法人东海国立大学机构 | 氮化镓的气相生长装置及制造方法 |
US11869767B2 (en) | 2020-02-14 | 2024-01-09 | National University Corporation Tokai National Higher Education And Research System | Gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material and manufacturing method therefor |
CN115087766B (zh) * | 2020-02-14 | 2024-04-30 | 国立大学法人东海国立大学机构 | 氮化镓的气相生长装置及制造方法 |
Also Published As
Publication number | Publication date |
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US20130247817A1 (en) | 2013-09-26 |
JP6091886B2 (ja) | 2017-03-08 |
US9359692B2 (en) | 2016-06-07 |
JP2013225648A (ja) | 2013-10-31 |
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