CN103309177B - Workpiece platform system of photoetching machine - Google Patents
Workpiece platform system of photoetching machine Download PDFInfo
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Abstract
The invention discloses a workpiece platform system of a photoetching machine. The workpiece platform system comprises a rack, a base platform, two silicon-chip platforms, a measuring grating, a dual-frequency laser, three-freedom-degree heterodyne grating interferometers and a signal receiving and processing part, wherein the two silicon-chip platforms operate at an exposure station and a preprocessing station; the four corners of each silicon-chip platform are provided with one three-freedom-degree heterodyne grating interferometer respectively, and the measuring grating is arranged on the rack above the silicon-chip platform. Dual-frequency orthogonal-polarization laser emitted by the dual-frequency laser is transmitted to the three-freedom-degree heterodyne grating interferometers and the measuring grating by optical fiber, four beams of diffraction light of the measuring grating irradiate back to the three-freedom-degree heterodyne grating interferometers, and finally the four beams of measuring light signals are emitted to the signal receiving and processing part. When the silicon-chip platforms move relatively to the measuring grating, the reading in the signal receiving and processing part is utilized for acquiring six-freedom displacement of the silicon-chip platforms by calculation. The workpiece platform system disclosed by the invention has the advantages that the indexes such as measuring accuracy and dynamic performance of the silicon-chip platforms can be improved, and further the whole performance of the workpiece platform system is further improved.
Description
Technical field
The present invention relates to a kind of lithography machine stage system, particularly a kind of lithography machine stage system utilizing Three Degree Of Freedom heterodyne grating interferometer to measure silicon wafer stage displacement.
Background technology
Litho machine in semiconductor manufacturing equipment is the key equipment in semiconductor chip fabrication.Ultra-precision table system system is the kernel subsystems of litho machine, for carrying mask plate and silicon chip completes high speed ultraprecise step-scan campaign.Ultra-precision table system system becomes the representational type systematic of most in ultraprecise kinematic system with its movement characteristic such as high speed, high acceleration, Long Distances, ultraprecise, multiple degrees of freedom.For realizing above-mentioned motion, ultra-precision table system adopts two-frequency laser interferometer measuring system to measure the displacement of ultra-precision table system multiple degrees of freedom usually.But improving constantly along with motion index such as measuring accuracy, measuring distance, measuring speeds, the series of problems that two-frequency laser interferometer is difficult to improve with environmental sensitivity, measuring speed, large, expensive, the measurement target work stage poor dynamic of taking up room etc. exists, thus be difficult to meet higher measurement demand.
For the problems of two-frequency laser interferometer in photo-etching machine work-piece platform position measurement application, in recent years, litho machine manufacturer and research institution have carried out a series of research in the world, research mainly concentrates on the measurement demand utilizing optical grating measuring system to realize photo-etching machine work-piece platform to improve constantly, and achievement in research all has exposure in many patent papers.
American documentation literature US7,102,729B2 (publication date on August 4th, 2005) discloses a kind of scheme utilizing the displacement of optical grating measuring system measuring workpieces platform multiple degrees of freedom, namely in the side of work stage and end face, multiple grating scale is installed, at the surrounding of work stage and the top layout read head corresponding with grating scale; The defect of this scheme is when work stage does x direction and the motion of y direction Long Distances in surface level, side read head can not work, corresponding solution is not provided in this patent documentation, also there are other shortcomings in the program, as laser light path comparatively ambassador's measurement be subject to environmental interference and affect measuring accuracy, measurement scheme takes up room large etc.American documentation literature US7, 940, 392B2 (publication date on Dec 24th, 2009) discloses the scheme that another kind utilizes the displacement of optical grating measuring system measuring workpieces platform multiple degrees of freedom, i.e. plane of arrangement grating above work stage, sensor work stage end face arranged corresponding grating reading head and measures for perpendicular displacement, the program does not exist measures light echo problem, be not subject to the problems such as environmental interference, but the grating reading head in the program only can measure level to displacement, Vertical dimension displacement measurement adopts current vortex or interferometer equal altitudes sensor, measurement scheme adopts multiple sensors not only to affect the measuring accuracy of work stage, and add the complexity of scheme.American documentation literature US7,483,120B2 gives the concrete methods of realizing of above-mentioned measurement scheme in (publication date on November 15th, 2007), 8 pieces of L-type plane grating splicings are utilized to measure grating as work stage, at top layout four grating reading heads of work stage, but in this patent formula, do not set forth the measurement degree of freedom of read head and the displacement measurement degree of freedom of work stage.American documentation literature publication number US2010/0321665A1 (publication date on Dec 23rd, 2010) discloses the grating reading header structure that plane grating can be coordinated to measure, though this structure can measure vertical direction displacement, but this read head adopts homodyne detection principle, existence measurement is easily disturbed, signal is difficult to the shortcomings such as process, and is difficult to realize very high measuring accuracy.Chinese patent literature (application number: 201210449244.9,201210448734.7) individually disclose a kind of heterodyne grating interferometer measuring system, quarter-wave plate is all have employed for changing the polarization state of light beam in the read head structure of two kinds of interferometer measuring systems, optical texture is complicated, the imperfection of optical element will cause measuring error simultaneously, and this will strengthen the measuring error of this grating interferometer measuring workpieces platform displacement of application; Two kinds of interferometer measuring systems all can only measure the displacement of two degree of freedom, and this will increase the interferometer quantity be arranged on silicon wafer stage, and what increase work stage displacement resolves difficulty, reduces the measuring accuracy of work stage displacement.
Summary of the invention
Consider the limitation of prior art, the object of this invention is to provide a kind of lithography machine stage system, this lithography machine stage system utilizes large scale grating to coordinate Three Degree Of Freedom heterodyne grating interferometer to carry out silicon wafer stage displacement measurement.The Three Degree Of Freedom heterodyne grating interferometer that system adopts can at a high speed, highly to accelerate, realize in Long Distances situation Measurement Resolution and the precision of sub-nanometer scale, have that environmental sensitivity is little, simple for structure, volume is little, quality is light, be easy to the advantages such as installation simultaneously.Lithography machine stage system adopts large scale grating to coordinate the metering system of Three Degree Of Freedom heterodyne grating interferometer can realize the measurement of the sub-nano-precision of silicon wafer stage six-degree of freedom displacement, volume and the quality of whole workpiece table system can be effectively reduced simultaneously, increase the dynamic property of silicon wafer stage and reduce the control difficulty of silicon wafer stage, lithography machine stage system performance is overally improved.
Technical scheme of the present invention is as follows:
A kind of lithography machine stage system, comprise frame, base station, run on two silicon wafer stages exposing station and preprocessing station respectively, it is characterized in that: described workpiece table system also comprises measures grating, two-frequency laser, Three Degree Of Freedom heterodyne grating interferometer and Signal reception and processing element;
Described measurement grating adopts plane reflection type two-dimensional grating, measure grating by exposure station measurement grating and preprocessing station to form, exposure station measurement grating and preprocessing station measurement grating respectively correspondence are installed in the frame above two silicon wafer stages exposing station and preprocessing station, and are carved with the upper surface of surface towards two silicon wafer stages of the two-dimentional reflection-type grating line of rabbet joint;
Four Three Degree Of Freedom heterodyne grating interferometers are installed at the described corner place running on two silicon wafer stages of exposure station and preprocessing station respectively, frame installs two-frequency laser, four the Three Degree Of Freedom heterodyne grating interferometers be respectively on the silicon wafer stage running on exposure station by Optical Fiber Transmission provide double frequency cross polarization laser with four the Three Degree Of Freedom heterodyne grating interferometers run on the silicon wafer stage of preprocessing station, and two-frequency laser is simultaneously for Signal reception and processing element provide reference electrical signal;
Described double frequency cross polarization laser respectively through vertical incidence after each Three Degree Of Freedom heterodyne grating interferometer to measuring grating, produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer, then export four drive test amount light signals by Three Degree Of Freedom heterodyne grating interferometer, four drive test amount light signals are delivered in Signal reception and processing element and process;
When described two silicon wafer stages running on exposure station and preprocessing station are respectively relative to the motion of measurement grating, Signal reception and processing element respectively export four groups of x, y and z to measuring displacement, utilize eight groups of measured values to calculate to run on the six-degree of freedom displacement of the silicon wafer stage of exposure station and preprocessing station respectively.
Three Degree Of Freedom heterodyne grating interferometer of the present invention comprises polarization spectroscope, with reference to grating, the first dioptric element and the second dioptric element, described reference grating is carved with the two-dimentional reflection-type grating line of rabbet joint on the surface; Double frequency cross polarization laser is incident to light splitting after polarization spectroscope, and transmitted light is reference light, and reflected light is for measuring light;
Described reference light is incident to reference to producing four bundle diffraction reflection reference lighies after grating, four bundle diffraction reflection reference lighies form four bundle parallel reference light through the first dioptric element post deflection, and after four bundle parallel reference light retroeflection to polarization spectroscope, transmission forms four bundle transmission reference light; Described measurement light produces four bundle diffraction reflections and measures light after being incident to and measuring grating, four bundle diffraction reflections are measured light and are formed four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope back reflections form four bundle reflection measurement light; Four bundle transmission reference light and four bundle reflection measurement light coincidence formation between two four drive test amount light signal respectively, four drive test amount light signals process to Signal reception and processing element through Optical Fiber Transmission respectively;
When Three Degree Of Freedom heterodyne grating interferometer relative to measure grating carry out x direction, y direction and z direction three degree of freedom linear movement time, Signal reception and processing element will export Three Degree Of Freedom linear displacement.
The first dioptric element in Three Degree Of Freedom potential difference grating interferometer of the present invention and the preferred version of the second dioptric element all adopt two right-angle prisms being positioned at xoy plane and be positioned at the integrated refractive prism of two right-angle prisms of xoz plane.
The first dioptric element in Three Degree Of Freedom heterodyne grating interferometer of the present invention and the another kind of preferred version of the second dioptric element all adopt lens.
A kind of heterodyne grating interferometer displacement measurement system provided by the present invention has the following advantages and high-lighting effect:
Arrange in lithography machine stage system that this Three Degree Of Freedom grating interferometer coordinates large scale grating can realize the measurement of the sub-nano-precision of silicon wafer stage six-degree of freedom displacement, volume and the quality of whole workpiece table system can be effectively reduced simultaneously, increase the dynamic property of silicon wafer stage and reduce the control difficulty of silicon wafer stage, lithography machine stage system performance is overally improved.Lithography machine stage system adopts Three Degree Of Freedom heterodyne grating interferometer, can at a high speed, highly to accelerate, realize in Long Distances situation Measurement Resolution and the precision of sub-nanometer scale, simultaneously measuring system have simple for structure, volume is little, quality is light, be easy to the advantages such as installation.
Accompanying drawing explanation
Fig. 1 is a kind of lithography machine stage system schematic diagram of the present invention.
Fig. 2 is that the present invention measures grating and the relative position schematic diagram of silicon wafer stage in xoy plane.
Fig. 3 is the first Three Degree Of Freedom heterodyne grating interferometer constructive embodiment schematic diagram of the present invention.
Fig. 4 is the second Three Degree Of Freedom heterodyne grating interferometer constructive embodiment schematic diagram of the present invention.
In figure, 1---frame; 2---vibrating isolation foundation; 3---base station; 4a---exposure station silicon wafer stage, 4b---preprocessing station silicon wafer stage; 5---measurement grating, preprocessing station measures grating to 51---exposure station measures grating, 52---; 6---two-frequency laser; 7---Three Degree Of Freedom heterodyne grating interferometer, 71---polarization spectroscope, 72---with reference to grating, 73---refractive prism, 74---lens; 8---Signal reception and processing element.
Embodiment
Below in conjunction with accompanying drawing, structure of the present invention, principle and embodiment are described in further detail.
Please refer to Fig. 1 and 2, Fig. 1 is a kind of lithography machine stage system schematic diagram of the present invention, and Fig. 2 is that the present invention measures grating and the relative position schematic diagram of silicon wafer stage in xoy plane, and composition graphs 1 and Fig. 2 are described lithography machine stage system of the present invention.As shown in Figure 1, lithography machine stage system comprises frame 1, base station 3, runs on the silicon wafer stage 4a of exposure station and run on the silicon wafer stage 4b of preprocessing station; Workpiece table system also comprises measures grating 5, two-frequency laser 6, Three Degree Of Freedom heterodyne grating interferometer 7 and Signal reception and processing element 8, and this part parts is for measuring the six-degree of freedom displacement of the silicon wafer stage 4a running on exposure station and the silicon wafer stage 4b running on preprocessing station.
Measurement frame 1, base station 3 are positioned on vibrating isolation foundation 2 by isolation mounting, base station 3 runs two silicon wafer stages, namely run on the silicon wafer stage 4a of exposure station and run on the silicon wafer stage 4b of preprocessing station, two silicon wafer stages carry out moving and place-exchange according to procedure arrangement, adopt two silicon wafer stage effectively to enhance productivity.
Please refer to Fig. 1 and Fig. 2, measure grating 5 to be made up of exposure station measurement grating 51 and preprocessing station measurement grating 52, exposure station measurement grating 51 and preprocessing station measurement grating 52 respectively correspondence are installed in the frame 1 above two silicon wafer stages exposing station and preprocessing station, and are carved with the upper surface of surface towards two silicon wafer stages of the two-dimentional reflection-type grating line of rabbet joint.Measure grating 5 and adopt plane reflection type two-dimensional grating, surface topography is small grid array; The grating constant of two-dimensional grating is usually in micron dimension, and the grooved of two-dimensional grating adopts the square groove type through particular design, with obtain two higher grating vector directions ± 1 order diffraction efficiency.Exposure station measures grating 51 and preprocessing station measures the dimensional requirement of grating 52 very greatly (800mm × 800mm), be very difficult to manufacture, adopting raster detect method to obtain is the best method that exposure station measurement grating 51 and preprocessing station measure grating 52.
Four Three Degree Of Freedom heterodyne grating interferometers 7 are respectively installed respectively by the corner place running on the exposure silicon wafer stage 4a of station and the silicon wafer stage 4b of preprocessing station, frame 1 is installed two-frequency laser 6, four the Three Degree Of Freedom heterodyne grating interferometers 7 be respectively on the silicon wafer stage running on exposure station by Optical Fiber Transmission provide double frequency cross polarization laser with four the Three Degree Of Freedom heterodyne grating interferometers 7 run on the silicon wafer stage of preprocessing station, and two-frequency laser 6 is simultaneously for Signal reception and processing element 8 provide reference electrical signal.
In fact, for meeting demand and the silicon wafer stage wire cable layout needs of eight Three Degree Of Freedom heterodyne grating interferometer laser powers, exposure station corresponding in frame 1 and preprocessing station respectively install a two-frequency laser 6, and four the Three Degree Of Freedom heterodyne grating interferometers 7 be respectively on the silicon wafer stage 4a running on exposure station provide double frequency cross polarization laser with four the Three Degree Of Freedom heterodyne grating interferometers 7 run on the silicon wafer stage 4b of preprocessing station.
Double frequency cross polarization laser extremely measures grating 5 respectively through vertical incidence after each Three Degree Of Freedom heterodyne grating interferometer 7, produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer 7, then export four drive test amount light signals by Three Degree Of Freedom heterodyne grating interferometer 7, four drive test amount light signals are delivered in Signal reception and processing element 8 and process.
In fact, for meeting silicon wafer stage wire cable layout needs, four the Three Degree Of Freedom heterodyne grating interferometers 7 be respectively on the silicon wafer stage 4a running on exposure station respectively arrange a set of Signal reception and processing element 8 with four the Three Degree Of Freedom heterodyne grating interferometers 7 run on the silicon wafer stage 4b of preprocessing station.
When described two silicon wafer stages running on exposure station and preprocessing station move relative to measurement grating 5 respectively, two cover Signal reception and processing element 8 export four groups of x, y and z respectively, and to measuring displacement, (z is to being small movements, range of movement is about 1mm), utilize eight groups of measured values to calculate to run on the six-degree of freedom displacement of the silicon wafer stage of exposure station and preprocessing station respectively.
Please refer to Fig. 3, Fig. 3 is the first Three Degree Of Freedom heterodyne grating interferometer constructive embodiment schematic diagram of the present invention.As shown in Figure 3, Three Degree Of Freedom heterodyne grating interferometer 7 comprises polarization spectroscope 71, with reference to grating 72, first dioptric element and the second dioptric element.Be carved with the two-dimentional reflection-type grating line of rabbet joint on the surface for generation of reference light with reference to grating 72, and measurement grating 5 has identical grating parameter.First dioptric element and the second dioptric element are used for the direction of propagation of polarized light, and the two all adopts two right-angle prisms being positioned at xoy plane and the integrated refractive prism 73 of two right-angle prisms being positioned at xoz plane.
Two-frequency laser 6 is incident to the rear light splitting of polarization spectroscope 71 by Optical Fiber Transmission double frequency cross polarization laser, and transmitted light is reference light, and reflected light is for measuring light; Described reference light is incident to reference to producing four bundle diffraction reflection reference lighies after grating 72, four bundle diffraction reflection reference lighies form four bundle parallel reference light through the first dioptric element post deflection, and after four bundle parallel reference light retroeflection to polarization spectroscope 71, transmission forms four bundle transmission reference light; Described measurement light produces four bundle diffraction reflections and measures light after being incident to and measuring grating 5, four bundle diffraction reflections are measured light and are formed four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope 71 back reflections form four bundle reflection measurement light; Four bundle transmission reference light and four bundle reflection measurement light coincidence formation between two four drive test amount light signal respectively, four drive test amount light signals process to Signal reception and processing element 8 through Optical Fiber Transmission respectively.
When Three Degree Of Freedom heterodyne grating interferometer 7 relative to measure grating 5 carry out x direction, y direction and z direction three degree of freedom linear movement time, Signal reception and processing element 8 will export Three Degree Of Freedom linear displacement, the expression formula of three-degree-of-freedom motion displacement: x=k
x× (alpha-beta), y=k
y× (γ-δ), z=k
z× (alpha+beta+γ+δ), k
x=Λ
x/ 4 π, k
y=Λ
y/ 4 π, k
z=λ/4 (1+cos θ), in formula, α, β, γ, δ are the phase place reading value of Signal reception and processing element 8, Λ
x, Λ
yfor grating constant, λ is optical maser wavelength, and θ is optical grating diffraction angle, gets Λ
x=Λ
y=1 μm, the phase resolution of λ=632.8nm, α, β, γ, δ is 2 π/1024, and the Measurement Resolution of x, y and z of heterodyne grating interferometer is respectively 0.49nm, 0.49nm and 0.18nm.
Please refer to Fig. 4, Fig. 4 is the second grating interferometer constructive embodiment schematic diagram of the present invention.As shown in Figure 4, the lens 74 that all adopt of the first dioptric element of this grating interferometer 7 and the second dioptric element.The focus place of two panels lens 74 is all arranged in reference to grating 72 and measurement grating 5, the four bundle reference lighies gone out from the diffraction reflection of reference grating 72 and the four bundle measurement light difference incident two panels lens 74 at a certain angle gone out from measurement grating 5 diffraction, export with directional light after two panels lens 74 deviation respectively, compare employing refractive prism, more succinct in program structure, be easy to debug, when changing optical grating diffraction angle, lens parameter and installation requirement need not be changed, and vertical lens optical axis direction stroke is larger.
The grating that utilizes provided in above-mentioned embodiment carries out the lithography machine stage system of silicon wafer stage displacement measurement, relative to the lithography machine stage system utilizing laser interferometer to carry out silicon wafer stage displacement measurement, on the basis meeting measurement demand, work stage volume, quality can be effectively reduced, greatly improve the dynamic property of work stage, work stage overall performance is comprehensively improved.Lithography machine stage system adopts Three Degree Of Freedom heterodyne grating interferometer, Measurement Resolution and the precision of sub-nanometer scale can be realized in high speed, high acceleration, Long Distances situation, simultaneously measuring system have simple for structure, volume is little, quality is light, be easy to the advantages such as installation, except the application in lithography machine stage system, this Three Degree Of Freedom heterodyne grating interferometer also can be applicable in the precision measurement of the objective table multiple degrees of freedom displacement in precision machine tool, three coordinate measuring machine, semiconductor detection etc.
Claims (3)
1. a lithography machine stage system, comprise frame (1), base station (3), run on two silicon wafer stages exposing station and preprocessing station respectively, it is characterized in that: described workpiece table system also comprises measures grating (5), two-frequency laser (6), Three Degree Of Freedom heterodyne grating interferometer (7) and Signal reception and processing element (8);
Described measurement grating (5) adopts plane reflection type two-dimensional grating, measure grating (52) by exposure station measurement grating (51) and preprocessing station to form, exposure station measurement grating (51) and preprocessing station measurement grating (52) respectively correspondence are installed in the frame (1) above two silicon wafer stages exposing station and preprocessing station, and are carved with the upper surface of surface towards two silicon wafer stages of the two-dimentional reflection-type grating line of rabbet joint;
Four Three Degree Of Freedom heterodyne grating interferometers (7) are installed at the described corner place running on two silicon wafer stages of exposure station and preprocessing station respectively, frame (1) is installed two-frequency laser (6), by Optical Fiber Transmission be respectively run on exposure station silicon wafer stage on four Three Degree Of Freedom heterodyne grating interferometers (7) and four the Three Degree Of Freedom heterodyne grating interferometers (7) run on the silicon wafer stage of preprocessing station double frequency cross polarization laser is provided, two-frequency laser (6) provides reference electrical signal for Signal reception and processing element (8) simultaneously,
Described double frequency cross polarization laser respectively through each Three Degree Of Freedom heterodyne grating interferometer (7) afterwards vertical incidence to measuring grating (5), produce four bundle diffraction reflection light, four bundle diffraction reflection light retroeflection are to Three Degree Of Freedom heterodyne grating interferometer (7), then export four drive test amount light signals by Three Degree Of Freedom heterodyne grating interferometer (7), four drive test amount light signals are delivered in Signal reception and processing element (8) and process;
When described two silicon wafer stages running on exposure station and preprocessing station are respectively relative to measurement grating (5) motion, Signal reception and processing element (8) respectively export four groups of x, y and z to measuring displacement, utilize eight groups of measured values to calculate to run on the six-degree of freedom displacement of the silicon wafer stage of exposure station and preprocessing station respectively;
Described Three Degree Of Freedom heterodyne grating interferometer (7) comprises polarization spectroscope (71), with reference to grating (72), the first dioptric element and the second dioptric element, described reference grating (72) is carved with the two-dimentional reflection-type grating line of rabbet joint on the surface; Double frequency cross polarization laser is incident to polarization spectroscope (71) light splitting afterwards, and transmitted light is reference light, and reflected light is for measuring light;
Described reference light is incident to and produces four bundle diffraction reflection reference lighies afterwards with reference to grating (72), four bundle diffraction reflection reference lighies form four bundle parallel reference light through the first dioptric element post deflection, and four bundle parallel reference light retroeflection are to polarization spectroscope (71) transmission formation four bundle transmission reference light afterwards;
Described measurement light is incident to measurement grating (5) and produces four bundle diffraction reflections measurement light afterwards, four bundle diffraction reflections are measured light and are formed four bundle horizontal survey light through the second dioptric element post deflection, and four bundle horizontal survey light retroeflection to polarization spectroscope (71) back reflections form four bundle reflection measurement light;
Four described bundle transmission reference light and four bundle reflection measurement light coincidence formation between two four drive test amount light signal respectively, four drive test amount light signals process to Signal reception and processing element (8) through Optical Fiber Transmission respectively; When Three Degree Of Freedom heterodyne grating interferometer (7) relative to measure grating (5) carry out x direction, y direction and z direction three degree of freedom linear movement time, Signal reception and processing element (8) will export Three Degree Of Freedom linear displacement.
2. a kind of lithography machine stage system according to claim 1, is characterized in that: the first described dioptric element and the second dioptric element all adopt two right-angle prisms being positioned at xoy plane and be positioned at the integrated refractive prism (73) of two right-angle prisms of xoz plane.
3. a kind of lithography machine stage system according to claim 1, is characterized in that: the first described dioptric element and the second dioptric element all adopt lens (74).
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| CN103322927B (en) | 2013-06-19 | 2016-04-20 | 清华大学 | A kind of Three Degree Of Freedom heterodyne grating interferometer displacement measurement system |
| CN104061864A (en) * | 2014-06-30 | 2014-09-24 | 清华大学 | Plane grating-based system for measuring large-stroke movement of wafer bench |
| CN106225685B (en) * | 2016-08-26 | 2018-11-30 | 清华大学 | A kind of big stroke Three Degree Of Freedom displacement measurement system of silicon wafer stage |
| CN108106536B (en) * | 2017-11-13 | 2023-10-10 | 清华大学 | Displacement measurement system of plane grating interferometer |
| CN108519053B (en) * | 2018-04-16 | 2020-05-29 | 桂林电子科技大学 | Device and method for measuring six degrees of freedom of motion platform |
| CN108801158B (en) * | 2018-08-17 | 2019-12-31 | 桂林电子科技大学 | Grating scale calibration device and calibration method |
| CN108731601B (en) * | 2018-08-17 | 2019-12-31 | 桂林电子科技大学 | Grating scale calibration device and calibration method for spatial light path |
| CN114152193B (en) * | 2020-09-07 | 2023-02-21 | 上海微电子装备（集团）股份有限公司 | Motion table grating measurement system and photoetching machine |
| CN112835270B (en) * | 2021-01-19 | 2024-02-09 | 上海集成电路装备材料产业创新中心有限公司 | Rotary measurement and control device of rotary platform |
| CN113804112A (en) * | 2021-08-16 | 2021-12-17 | 北京华卓精科科技股份有限公司 | Displacement measurement system and lithographic apparatus |
| CN114993190B (en) * | 2022-05-10 | 2023-11-07 | 清华大学 | Six-degree-of-freedom displacement measuring system for grating of photoetching machine |
| CN117949959A (en) * | 2022-10-27 | 2024-04-30 | 华为技术有限公司 | Position measuring device, semiconductor device manufacturing apparatus, and device manufacturing method |
| CN117250832B (en) * | 2023-11-15 | 2024-02-23 | 福建安芯半导体科技有限公司 | Precision positioning platform and photoetching machine |
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