CN103308520A - Evaluation method for polycrystal battery technical level and slice source - Google Patents
Evaluation method for polycrystal battery technical level and slice source Download PDFInfo
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- CN103308520A CN103308520A CN2013102730907A CN201310273090A CN103308520A CN 103308520 A CN103308520 A CN 103308520A CN 2013102730907 A CN2013102730907 A CN 2013102730907A CN 201310273090 A CN201310273090 A CN 201310273090A CN 103308520 A CN103308520 A CN 103308520A
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- 238000011156 evaluation Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000005401 electroluminescence Methods 0.000 claims abstract description 23
- 238000005424 photoluminescence Methods 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000013139 quantization Methods 0.000 claims description 15
- 238000001914 filtration Methods 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000004364 calculation method Methods 0.000 claims description 5
- 238000006467 substitution reaction Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000003908 quality control method Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides an evaluation method for a polycrystal battery technical level and a slice source. According to the method, defect information of a silicon slice is extracted through electroluminescence or photoluminescence, so that quantified parameters capable of representing the quality of the silicon slice can be obtained. Furthermore, based on the quantified parameters and a test for voltage of an open circuit (Voc) of a battery, the influence of the battery technical level and a polycrystal silicon slice source on the Voc can be separated.
Description
Technical field
The invention belongs to the polycrystalline solar cell field, relate in particular to the technological level of polycrystalline solar cell and the evaluation method of sheet source quality.
Background technology
In the polysilicon solar cell field, polysilicon chip quality and battery process are all influential to the battery performance.Therefore, how from battery performance (as V
Oc) in assess the influence of polysilicon chip sheet source quality and battery process respectively, in order to simultaneously film source and battery process level are monitored, be that industry is devoted to the problem that solves always.
Summary of the invention
The present invention proposes the evaluation method of a kind of battery process and polysilicon chip film source.This method is utilized the defect information in electroluminescence or the photoluminescence extraction silicon chip, thereby obtains to can be used for characterizing the quantization parameter of silicon chip quality.Further, the present invention is based on described quantization parameter, and in conjunction with battery open circuit voltage V
OcTest is isolated battery process level and polysilicon chip film source to V
OcInfluence size.
According to a first aspect of the invention, propose a kind of silicon chip method for quality that quantization parameter is used for characterizing the polycrystalline battery of extracting, comprising: the electroluminescence EL image or the photoluminescence PL image that obtain the polycrystalline battery; Handle described EL or PL image, to obtain the minority carrier life time image; Minority carrier life time parameter L T based on the described polycrystalline battery of described minority carrier life time image calculation; And use described minority carrier life time parameter L T as the quantization parameter of silicon chip quality.
In the said method, handle described EL image or PL image in the following manner to obtain the minority carrier life time image: described EL image or PL image are carried out maximal value filtering; Filtered image and original image are subtracted each other; And the image after subtracting each other carried out optional linear transformation, and remove the grid line part with mask.
In the said method, the form of described maximal value filtering is: β
I, j=M
I, j-max (R
I, j), M wherein
I, jRepresent pixel current to be investigated (i, brightness j), max (R
I, j) the current maximal value of waiting to investigate in the neighborhood of pixels of expression, Β
I, jThe difference of representing the two.
In the said method, the brightness of each pixel is corresponding to the minority carrier life time of this location of pixels on the silicon chip on the described minority carrier life time image; The brightness of each pixel is corresponding to the permanent defects information of this location of pixels on the silicon chip on the described minority carrier life time image.
In the said method, based on described minority carrier life time image calculation average minority carrier lifetime, to obtain described minority carrier life time parameter L T.
According to a second aspect of the invention, a kind of online polysilicon chip film source quality control method of solar cell is proposed, according to the method for first aspect, online acquisition minority carrier life time parameter L T; And use described minority carrier life time parameter L T as the quantization parameter of silicon chip quality, compare the mass discrepancy between film source.
According to a third aspect of the invention we, propose a kind of polysilicon chip sheet source quality of assessing to the method for the influence of polycrystalline battery open circuit voltage, comprising: select standard polysilicon chip in batches, under standard technology, make obtaining standard polycrystalline battery in batches; To in the standard polycrystalline battery of described batch each, use the method for first aspect to obtain corresponding minority carrier life time parameter L T as the quantization parameter of silicon chip quality; To in the standard polycrystalline battery of described batch each, measure its corresponding open-circuit voltage V
OcAnd based on minority carrier life time parameter L T and the open-circuit voltage V of the standard polycrystalline battery of described batch
Oc, simulate one parsing formula: V
Oc=kLT+b, wherein b is constant, coefficient k characterizes silicon chip sheet source quality to V
OcInfluence.
In the said method, between waiting, a plurality of silicon rod sections back chooses, to select the standard polysilicon chip of described batch.
According to a forth aspect of the invention, propose a kind of manufacture craft of solar cell of assessing to the method for the influence of polycrystalline battery open circuit voltage, comprising: according to the method for the third aspect, obtain V under the standard film technology
OcRelational expression V with LT
Oc=kLT+b; The open-circuit voltage V of each in the batch polycrystalline battery that test is made with technology to be assessed
Oc1According to the method for first aspect, test in the described batch polycrystalline battery minority carrier life time parameter L T1 of each; Calculate the mean value of LT1, with the described relational expression V of this mean value substitution
Oc=kLT+b obtains the average open-circuit voltage V under the standard film technology
Oc0And with V
Oc1With V
Oc0Between difference α characterize open-circuit voltage V between technology to be assessed and the standard film technology
OcPoor.
According to a fifth aspect of the invention, propose a kind of online process monitoring method of solar cell, comprising: according to the online acquisition difference of the method for fourth aspect α; And judge that based on described difference α technology to be assessed is than the stability of standard film technology.。
Description of drawings
Comprise that accompanying drawing is for providing the present invention further to be understood, they are included and are constituted the application's a part, and accompanying drawing shows embodiments of the invention, and play the effect of explaining the principle of the invention with this instructions.In the accompanying drawing:
Fig. 1 a illustrates the electroluminescence of polycrystalline battery according to an embodiment of the invention (EL) image.
The minority carrier life time figure that Fig. 1 b obtains after illustrating and according to embodiments of the invention the image of Fig. 1 a being handled.
Fig. 2 illustrates the open-circuit voltage of standard film and the relation between the minority carrier life time.
Embodiment
Below in conjunction with accompanying drawing detailed the present invention is described, comprise the present invention based on know-why, and typical embodiment.
The application's proposed invention can comprise following aspect:
1. image obtains
According to the present invention, can obtain electroluminescence (EL) or photoluminescence (PL) image of polycrystalline battery, the two image is similar.Fig. 1 (a) example has provided the electroluminescence image.The position of image is dark to can be 16 or higher.
2. image is handled
Handling according to image of the present invention mainly is the information extraction of permanent defects in the EL/PL image.PL or EL image all are the results of radiation recombination, thus its pixel brightness should be proportional to excess carriers Δ n and background doping level (p
0Or n
0).Under the certain situation of implantation concentration, Δ n is relevant with the minority carrier life time of pixel position.Some crystal structure defects yardstick in the polycrystalline is little, compound ability is strong, thereby can bring the sudden change of Δ n on space scale, thereby corresponding sudden change takes place in pixel brightness meeting.And background doping level is caused by the fractional condensation of casting ingot process and the diffusion of battery process, and the characteristics of these two kinds of technologies all determine it can not cause EL(PL) sudden change of brightness, and only can bring brightness disproportionation in large scale.Embodiments of the invention example ground adopts 50 * 50 maximal value filtering, and after subtracting each other with original image, (this step is optional through linear conversion again, linear change is intended to transfer luminance difference to minority carrier life time based on the calibration value of hypothesis) and remove the grid line part with mask, obtain minority carrier life time image (seeing Fig. 1 b), and calculate its average minority carrier lifetime, obtain minority carrier life time parameter L T.The form of maximal value filtering is as follows:
β
I, j=M
I, j-max (R
I, j) (formula 1)
In the above-mentioned formula 1, M
I, jRepresent pixel current to be investigated (i, brightness j), max (R
I, j) the current maximal value of waiting to investigate in the neighborhood of pixels of expression, Β
I, jThe difference of representing the two.
By above-mentioned processing, go out to extract minority carrier life time parameter L T from the EL/PL image, it can be used as the quantization parameter of silicon chip quality.
Supplementary notes: the brightness value on the minority carrier life time image is proportional to minority carrier life time in principle.This method is investigated the relative value that brightness departs from, and therefore needn't demarcate the specifically concrete ratio of the two, directly characterizes minority carrier life time with brightness value and gets final product.
3. standard cell built-in testing and typical curve obtain
According to the present invention, can choose a group system and select polysilicon chip, 50-100 sheet for example, these standard films have different quality grades.Choosing method can be uniformly-spaced to choose after a plurality of silicon rod sections, and is representative to guarantee the silicon chip quality.Silicon chip is once dropped into a certain stabilization process make the battery sheet.Test the V of each sheet battery
OcWith the EL image, and calculate its minority carrier life time parameter L T with the method for step 2.V with correspondence
OcPlot scatter diagram with LT, can get once relation as shown in Figure 2, simulate its analytic expression by once concerning
V
Oc=kLT+b (formula 2)
In the following formula, b is constant, and the silicon chip quality that coefficient k is represented to be characterized with LT is to open-circuit voltage V
OcInfluence.Thus, for the silicon chip film source of different quality, after knowing its minority carrier life time parameter L T, can judge its quality good or not, and can judge that mass discrepancy is to battery performance (V
Oc) influence size.
4. the technology of any batch of polycrystalline battery and film source evaluation
According to the present invention, the battery of desirable unknown technology and film source is a collection of, measures the V of battery
Oc1, and according to EL(PL) image calculation minority carrier life time parameter L T1.Calculate the mean value of LT1, this mean value substitution formula 2 is calculated V
Oc0, make α=V
Oc0-V
Oc1, then α is caused V by surveying between battery sheet and the standard cell sheet because of technology
OcDifference.Monitor the size of α, can estimate the stability of technology.For example, when the size of α surpasses a threshold value, can think that then unknown technology to be evaluated compared than large deviation with standard technology.
As mentioned above, minority carrier life time parameter L T itself can represent the silicon chip quality, therefore, can judge the quality of silicon chip quality by monitoring parameter LT.Also the LT difference △ LT substitution formula 2 of (between silicon slice under test and benchmark silicon chip) between two kinds of film sources can be obtained and amounted to out pressure difference △ V between film source
Oc
Many aspects of the present invention have more than been described.The foregoing description mode is only for ease of explaining know-why of the present invention and design, and should not be considered as limitation of the scope of the invention.For example, more than described the scheme that technology and the film source of polycrystalline battery are all estimated, but it will be understood by those skilled in the art that the present invention should contain the embodiment of separately technology being estimated and separately the sheet source quality being estimated.
Embodiment 1:
Embodiment 1 is intended to extract the silicon chip quality that quantization parameter is used for characterizing the polycrystalline battery.Embodiment 1 can comprise:
1) obtains the EL/PL image of solar cell;
2) the EL/PL image is handled, to extract minority carrier life time parameter L T, as the quantization parameter of the silicon chip quality that characterizes the polycrystalline battery.
Further, based on minority carrier life time parameter L T, can judge the quality of silicon chip film source, but the quality of on-line monitoring silicon chip film source.
Embodiment 2:
Embodiment 2 is intended to estimate the polysilicon chip quality to the influence of the open-circuit voltage of solar cell.Embodiment 1 can comprise:
1) selects certain batch silicon wafer, make the battery sheet in certain technology next time.
2) test battery V
OcAnd EL, and calculate its minority carrier life time parameter L T.
3) by standard film source V among Fig. 2
OcWith the LT curve as can be known, the LT and the V that calculate with step 2
OcLinear dependence.Therefore, can be by once concerning match V
OcWith minority carrier life time LT relation, the battery V of the LT of the unit of obtaining
OcInfluence (k in the formula 2).
Embodiment 3:
Embodiment 3 is intended to estimate cell making process to the influence of the open-circuit voltage of solar cell.Embodiment 3 can comprise:
1) under the prerequisite of known standard sheet open-circuit voltage-life-span relation (matched curve formula in as Fig. 2),
Test the polycrystalline battery sheet of one group of unknown silicon chip film source and battery process, obtain the V of every battery
Oc1And LT1.
2) mean value of calculating LT1 with this mean value substitution formula 2, calculates the average V under the standard film technology
Oc0
3) V
Oc1With V
Oc0Difference α be V between tested battery and standard film technology
OcPoor.
Further, based on difference α, but the stability of the manufacture craft of on-line monitoring solar cell.
The effect of invention
The present invention utilizes the EL(PL of battery sheet) image extracts the silicon chip quality that quantization parameter be used for to characterize the polycrystalline battery.Further, based on the quantization parameter that extracts, and in conjunction with V
OcTest, the present invention can judge the quality of battery process and polysilicon chip film source rapidly.Two kinds of method of testing test durations can be made into online mode monitoring battery technology stability and polycrystalline film source quality good or not all less than 1 second.
Claims (11)
1. one kind is extracted the silicon chip method for quality that quantization parameter is used for characterizing the polycrystalline battery, comprising:
Obtain electroluminescence EL image or the photoluminescence PL image of polycrystalline battery;
Handle described EL or PL image, to obtain the minority carrier life time image;
Minority carrier life time parameter L T based on the described polycrystalline battery of described minority carrier life time image calculation; And
Use described minority carrier life time parameter L T as the quantization parameter of silicon chip quality.
2. the method for claim 1 is characterized in that, handles described EL image or PL image in the following manner to obtain the minority carrier life time image:
Described EL image or PL image are carried out maximal value filtering;
Filtered image and original image are subtracted each other; And
Image after subtracting each other is carried out optional linear transformation, and remove the grid line part with mask.
3. method as claimed in claim 2 is characterized in that, the form of described maximal value filtering is:
β
i,j=M
i,j-max(R
i,j)，
M wherein
I, jRepresent pixel current to be investigated (i, brightness j), max (R
I, j) the current maximal value of waiting to investigate in the neighborhood of pixels of expression, Β
I, jThe difference of representing the two.
4. the method for claim 1 is characterized in that, the brightness of each pixel is corresponding to the minority carrier life time of this location of pixels on the silicon chip on the described minority carrier life time image.
5. the method for claim 1 is characterized in that, the brightness of each pixel is corresponding to the permanent defects information of this location of pixels on the silicon chip on the described minority carrier life time image.
6. the method for claim 1 is characterized in that, based on described minority carrier life time image calculation average minority carrier lifetime, to obtain described minority carrier life time parameter L T.
7. the online polysilicon chip film source quality control method of a solar cell comprises:
According to each described method among the claim 1-6, online acquisition minority carrier life time parameter L T; And
Use described minority carrier life time parameter L T as the quantization parameter of silicon chip quality, relatively the mass discrepancy between film source.
8. assess polysilicon chip sheet source quality to the method for the influence of polycrystalline battery open circuit voltage for one kind, comprising:
Select standard polysilicon chip in batches, under standard technology, make obtaining standard polycrystalline battery in batches;
To in the standard polycrystalline battery of described batch each, right to use requires among the 1-6 each method to obtain corresponding minority carrier life time parameter L T as the quantization parameter of silicon chip quality;
To in the standard polycrystalline battery of described batch each, measure its corresponding open-circuit voltage V
OcAnd
Minority carrier life time parameter L T and open-circuit voltage V based on the standard polycrystalline battery of described batch
Oc, simulate the one parsing formula:
V
oc＝k·LT+b
Wherein b is constant, and coefficient k characterizes silicon chip sheet source quality to V
OcInfluence.
9. method as claimed in claim 8 is characterized in that, chooses between wait a plurality of silicon rod sections back, and to select the standard polysilicon chip of described batch, the polysilicon chip of described batch has two or more quality grades.
10. assess the manufacture craft of solar cell to the method for the influence of polycrystalline battery open circuit voltage for one kind, comprising:
According to Claim 8 or 9 described methods, obtain V under the standard film technology
OcRelational expression V with LT
Oc=kLT+b;
The open-circuit voltage V of each in the batch polycrystalline battery that test is made with technology to be assessed
Oc1
According to each described method among the claim 1-6, test in the described batch polycrystalline battery minority carrier life time parameter L T1 of each;
Calculate the mean value of LT1, with the described relational expression V of this mean value substitution
Oc=kLT+b obtains the average open-circuit voltage V under the standard film technology
Oc0And
With V
Oc1With V
Oc0Between difference α characterize open-circuit voltage V between technology to be assessed and the standard film technology
OcPoor.
11. the online process monitoring method of a solar cell comprises:
The online acquisition difference of method according to claim 10 α; And
Judge that based on described difference α technology to be assessed is than the stability of standard film technology.
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| CN109781693A (en) * | 2013-12-19 | 2019-05-21 | 原子能及能源替代委员会 | Monitor the method and system of the quality of photovoltaic cell |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. |
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