CN103296189A - 一种高导热率高取光高耐压集成式led - Google Patents
一种高导热率高取光高耐压集成式led Download PDFInfo
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- CN103296189A CN103296189A CN2013102452812A CN201310245281A CN103296189A CN 103296189 A CN103296189 A CN 103296189A CN 2013102452812 A CN2013102452812 A CN 2013102452812A CN 201310245281 A CN201310245281 A CN 201310245281A CN 103296189 A CN103296189 A CN 103296189A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
一种高导热率高取光高耐压集成式led,包括基材,所述基材由线路层、绝缘导热层、铜面组成;LED芯片;荧光胶;模压硅胶,其特征在于:还包括铜杯,以及在线路层面向内凹陷可容纳铜杯的若干凹槽;所述铜杯以铆合方式设置于凹槽内,所述LED芯片固晶于铜杯内,所述LED芯片通过金线与线路层连接,所述荧光胶填充于铜杯内,所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。本发明散热效果好,产生的热量经由铜杯做面积扩散至绝缘导热层,然后传导至下方的铜面再经由铜面传道至散热器。抗电压击穿能力强,取光率高。
Description
技术领域
本发明涉及高导热率高取光高耐压集成式led,属于led照明与背光领域。
背景技术
目前LED采用集成式多芯片为一个国内发展的趋势, 现有的技术方案为芯片直接贴于电路板或铝基板上,打线后连成回路,在于边缘以划胶或黏合框架将芯片周围成为一较低的凹槽,再将与萤光粉混合的胶材倒入凹槽内做成集成式LED。上述技术方案,出于散热目的,多采用金属基板,在绝缘层上挖出灯杯开孔以容LED,但也因此导致金属基板高压耐受能力不足;采用的硅胶胶量大,如采用软的硅胶吸湿率很高,于高湿环境下硅胶吸湿后会膨胀造成质量问题;同时,因于芯片上方灌注硅胶形成一平面,导致产生内反射,平面对比于好的曲面光取出可差异5-10%的亮度。
发明内容
针对现有技术的不足,本发明的目的是提供一种高导热率高取光高耐压集成式led。
为实现上述目的,本发明是通过以下技术手段来实现的:一种高导热率高取光高耐压集成式led,包括基材,所述基材由线路层、绝缘导热层、铜面组成;LED芯片;荧光胶;模压硅胶,其特征在于:还包括铜杯,以及在线路层面向内凹陷可容纳铜杯的若干凹槽;所述铜杯以铆合方式设置于凹槽内,所述LED芯片固晶于铜杯内,所述LED芯片通过金线与线路层连接,所述荧光胶填充于铜杯内,所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。
进一步,所述荧光胶的上表面为弧形曲面;
在所述线路层与铜杯表面电镀有一层银面;
所述铜杯材质为无氧铜(红铜);
所述基材为覆铜板材(cam3-09)或高导热玻纤板。
本发明的有益效果是:散热效果好,产生的热量经由铜杯做面积扩散至绝缘导热层,然后传导至下方的铜面再经由铜面传道至散热器。抗电压击穿能力强,取光率高。
附图说明
图1为本发明的结构示意图。
附图标号的含义如下:
1铜面,2绝缘导热层,3led芯片,4凹槽, 5铜杯, 6荧光胶, 7金线, 8模压硅胶,9线路层。
具体实施方式
下面将结合说明书附图,对本发明作进一步的说明。
如图1所示,一种高导热率高取光高耐压集成式led,包括基材,所述基材由线路层9、绝缘导热层2、铜面组成1;LED芯片3;荧光胶6;模压硅胶5,设置有铜杯5,其作用是以面积扩散的方式将热量传导至绝缘导热层2,再经由铜面1扩散至散热器。在线路层面向内凹陷可容纳铜杯的若干凹槽4,凹槽4不穿孔基材,以增加基材的抗电压能力;所述铜杯5以铆合方式设置于凹槽4内,所述LED芯片3固晶于铜杯5内,所述LED芯片3通过金线7与线路层9连接形成回路;所述荧光胶6填充于铜杯5内,使其蓝光与萤光粉的黄光混合成白光;所述模压硅胶8以外表面呈球形曲面的形状覆盖于铜杯5上,球形曲面的取光比平面提高5-10%。
进一步,所述荧光胶6的上表面为弧形曲面,用以增加取光;
在所述线路层9与铜杯5表面电镀有一层银面,以利反光与打线。
所述铜杯5材质为无氧铜(红铜);
所述基材为覆铜板材(cam3-09)或高导热玻纤板,其导热率可达1-1.5,耐压4.5KV不击穿。
以上显示和描述了本发明的基本原理、主要特征及优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (5)
1.一种高导热率高取光高耐压集成式LED,包括基材,所述基材由线路层、绝缘导热层、铜面组成;LED芯片;荧光胶;模压硅胶,其特征在于:还包括铜杯,以及在线路层面向内凹陷可容纳铜杯的若干凹槽;所述铜杯以铆合方式设置于凹槽内,所述LED芯片固晶于铜杯内,所述LED芯片通过金线与线路层连接,所述荧光胶填充于铜杯内,所述模压硅胶以外表面呈球形曲面的形状覆盖于铜杯上。
2.如权利要求1所述的一种高导热率高取光高耐压集成式LED,其特征在于:所述荧光胶的上表面为弧形曲面。
3.如权利要求1所述的一种高导热率高取光高耐压集成式LED,其特征在于:在所述线路层与铜杯表面电镀有一层银面。
4.如权利要求1所述的一种高导热率高取光高耐压集成式LED,其特征在于:所述铜杯材质为无氧铜(红铜)。
5.如权利要求1所述的一种高导热率高取光高耐压集成式LED,其特征在于:所述基材为覆铜板材(cam3-09)或高导热玻纤板。
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Citations (5)
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JP2010125647A (ja) * | 2008-11-26 | 2010-06-10 | Towa Corp | 光学成形品の圧縮成形方法及び金型 |
TW201103170A (en) * | 2009-07-08 | 2011-01-16 | Paragon Sc Lighting Tech Co | LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
CN102447044A (zh) * | 2010-12-10 | 2012-05-09 | 奉化市匡磊半导体照明有限公司 | 绝缘底板发光芯片封装结构 |
CN103050606A (zh) * | 2013-01-11 | 2013-04-17 | 华南师范大学 | 一种高显色指数大功率led封装结构及其制造方法 |
CN203377251U (zh) * | 2013-06-20 | 2014-01-01 | 苏州金科信汇光电科技有限公司 | 一种高导热率高取光高耐压集成式led |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010125647A (ja) * | 2008-11-26 | 2010-06-10 | Towa Corp | 光学成形品の圧縮成形方法及び金型 |
TW201103170A (en) * | 2009-07-08 | 2011-01-16 | Paragon Sc Lighting Tech Co | LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
CN102447044A (zh) * | 2010-12-10 | 2012-05-09 | 奉化市匡磊半导体照明有限公司 | 绝缘底板发光芯片封装结构 |
CN103050606A (zh) * | 2013-01-11 | 2013-04-17 | 华南师范大学 | 一种高显色指数大功率led封装结构及其制造方法 |
CN203377251U (zh) * | 2013-06-20 | 2014-01-01 | 苏州金科信汇光电科技有限公司 | 一种高导热率高取光高耐压集成式led |
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