CN103295881B - The method removing silicon chip surface dielectric materials - Google Patents
The method removing silicon chip surface dielectric materials Download PDFInfo
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- CN103295881B CN103295881B CN201310222244.XA CN201310222244A CN103295881B CN 103295881 B CN103295881 B CN 103295881B CN 201310222244 A CN201310222244 A CN 201310222244A CN 103295881 B CN103295881 B CN 103295881B
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- silicon chip
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Abstract
The present invention relates to semiconductor integrated circuit manufacturing technology field, be specifically related to a kind of method removing silicon chip surface dielectric materials, comprise the following steps: provide a surface to have the silicon chip of low dielectric material；After silicon chip is carried out ultraviolet curing process, use certain density Fluohydric acid. that silicon chip carries out wet-cleaning, then use deionized water again silicon chip to be carried out, be finally passed through nitrogen and be dried process.Owing to invention has first carried out a ultraviolet curing process before silicon chip is carried out wet-cleaning, the dielectric materials making silicon chip surface is solidified, the dielectric materials of silicon chip surface can be effectively removed when carrying out wet-cleaning again, also it is not easy silicon chip is caused damage simultaneously, make the silicon chip after the present invention processes can be again with, and then reduce production cost.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, be specifically related to a kind of removal silicon chip surface low dielectric material
The method of material.
Background technology
Along with the continuous progress of semiconductor process technique, when the scope of semiconductor devices shrink to deep-submicron, just need
Dielectric materials to be used reduces the RC time delay caused because of dead resistance and parasitic capacitance, thus reaches to improve device
The purpose of energy.
The formation process of dielectric materials is usually chemical vapor deposition method at present.Imitate to reach stable deposition
Really, it is necessary to chemical vapor deposition machine station is carried out daily spot check.And the silicon chip of daily spot check needs circulation to reuse, this is just
Need to remove the dielectric materials that be deposited on silicon chip, and silicon chip surface reaches the specification that can recycle.
Employed technical scheme comprise that direct hydrofluoric acid solution is carried out removing deposition and amasss at silicon chip silicon chip at present
On dielectric materials, but those skilled in the art find, silicon chip surface after hydrofluoric acid solution is cleaned is lost relatively
For seriously, then it is no longer available for the spot check of board when silicon chip surface is lost to a certain extent and is formed and scrap, the most existing skill
The silicon chip scrapped is not processed by art yet, causes the waste of spot check silicon chip, adds production cost.
A kind of method that Chinese patent (application number: 200910035260.1) discloses Wafer Cleaning, wherein following steps:
Silicon chip is the most first put into kerosene soak 1-2 hour；B. silicon chip is put into sodium hydroxide solution is ultrasonic washes 30 minutes, ultrasonic power
Being set to 100W, temperature is 50-70 DEG C；C. silicon chip is cooled to room temperature, rinses 1 minute with circulating water；D. silicon chip is put into BS-1 molten
Liquid is ultrasonic washes 30 minutes, and ultrasonic power is set to 100W, and temperature is 40-60 DEG C；E. silicon chip is cooled to room temperature, rinses with circulating water
1 minute；F., silicon chip puts into pure water is ultrasonic washes 30 minutes, and ultrasonic power is set to 100W, and temperature is 30-50 DEG C；G. silicon chip
It is cooled to room temperature, rinses 1 minute with circulating water；H., silicon chip is put into dehydrated alcohol be dehydrated 3-5 minute；I. silicon chip after dehydration is put
Entering baking oven to dry 30-50 minute, oven temperature is 70-80 DEG C；K. finished product.
This patent of invention is by using above step that silicon chip carries out multiple cleaning, and then lifting silicon chip stretching should
Power, but as it has been described above, the cleaning process flow of this invention offer is more, step is comparatively laborious, have impact on to a certain extent
Production efficiency；In some technique, need to remove the dielectric materials of silicon chip surface deposition simultaneously, use the technical side of this invention
The dielectric materials of silicon chip surface can not be removed by case.
Summary of the invention
The present invention according to of the prior art when the board depositing chemical gaseous phase carries out spot check silicon chip surface due to heavy
The problem that long-pending more dielectric materials and easily producing is scrapped, it is provided that the side of a kind of removable silicon chip surface dielectric materials
Method, can effectively remove silicon chip surface deposition dielectric materials, and technique is simple simultaneously, and production cost is relatively low, is suitable for popularization and application.
The technical solution used in the present invention is:
A kind of method removing silicon chip surface dielectric materials, wherein, comprises the following steps:
A surface is provided to have the silicon chip of low dielectric material；
After described silicon chip is carried out ultraviolet curing process, continue this silicon chip is carried out successively the first cleaning and second
Cleaning；
Drying process is finally utilized to remove the dielectric materials of described silicon chip surface；
Wherein, after using Fluohydric acid. that described silicon chip is carried out described first cleaning, deionized water is used to carry out described
Second cleaning.
The above-mentioned method removing silicon chip surface dielectric materials, wherein, the reaction temperature that ultraviolet curing processes is 350
～400 DEG C, the time is 280～320s.
The above-mentioned method removing silicon chip surface dielectric materials, wherein, the concentration of described hydrofluoric acid solution be 48%～
52%, scavenging period is 20s～60s.
The above-mentioned method removing silicon chip surface dielectric materials, wherein, is passed through nitrogen and described silicon chip is dried work
Skill.
The above-mentioned method removing silicon chip surface dielectric materials, wherein, when carrying out described drying process, nitrogen gas concn >=
99%, flow is 5000～10000sccm, and the response time is 35～45s.
Owing to present invention employs above technical scheme, by having the silicon chip of dielectric materials to carry out ultraviolet surface deposition
Proceed two kinds of different cleanings after line cured, be finally passed through nitrogen and be dried technique, can effectively remove silicon
The dielectric materials of sheet surface deposition, reduces the scrappage of product so that the silicon chip after above-mentioned PROCESS FOR TREATMENT meets technique
Demand can be continuing with, and then reduces production cost.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the present invention and feature thereof, outward
Shape and advantage will become more apparent upon.The part that labelling instruction identical in whole accompanying drawings is identical.The most proportionally
Draw accompanying drawing, it is preferred that emphasis is the purport of the present invention is shown.
Fig. 1 is the flow chart that the present invention removes silicon chip surface dielectric materials method.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is further described:
Fig. 1 is that this law is removed the flow chart of silicon chip surface dielectric materials method and specifically included following steps:
Step S1, the daily spot check silicon chip of offer dielectric deposition board, in general, silicon chip surface deposition has
The dielectric materials of 5000A, then carries out ultraviolet curing process, in an embodiment of the present invention, ultraviolet curing to silicon chip
The reaction temperature processed be 350～400 DEG C (such as 350 DEG C, 380 DEG C, 400 DEG C), the time is 280～320s(such as 280s, 290s,
300s, 320s)；Preferably, being 385 DEG C in temperature, the ultraviolet curing process carrying out 300s can obtain the technique effect of optimum,
The dielectric materials making silicon chip surface solidifies and carries out follow-up technique.
Step S2, employing Fluohydric acid. easily carry out the first cleaning to silicon chip, in an embodiment of the present invention, use dense
Degree is that the hydrofluoric acid solution of 48%～52% carries out 20s～60s cleaning to silicon chip；Preferably, the Fluohydric acid. using concentration to be 49% is molten
Liquid is carried out can reach best cleaning performance, owing to have passed through a ultraviolet curing process in advance so that silicon chip surface
Dielectric materials is solidified, then can effectively remove the dielectric materials of silicon chip surface when carrying out wet-cleaning, does not also allow simultaneously
Easily silicon chip is caused damage.
Step S3, continuation use deionized water that silicon chip is carried out the second cleaning.
Step S4, drying process is utilized to remove the dielectric materials of described silicon chip surface, in an embodiment of the present invention, logical
Enter nitrogen and silicon chip be dried technique: wherein, be passed through nitrogen when being dried technique, it is ensured that be passed through concentration >=99% of nitrogen,
The flow of nitrogen is 5000～10000sccm(such as 5000sccm, 7000sccm, 8000sccm, 9000sccm simultaneously,
10000sccm is equivalent), and will control in the response time to be 35～45s(such as 35s, 38s, 40s, 42s, 45s), to obtain optimum
Technique effect；
So far the step of the present invention is fully completed, due to silicon chip through ultraviolet curing process after so that silicon chip table
The dielectric materials in face is solidified, and is carried out and drying process the most again, low Jie effectively removing silicon chip surface deposition
While electric material, it is ensured that the tidiness of silicon chip surface so that silicon chip after treatment can be continuing with, and decreases product
Scrap, reduce production cost；
Meanwhile, the technical scheme that the present invention provides is also same in other field removes the technique of silicon chip surface dielectric materials
Sample is suitable for, and repeats no more in this present invention.
Owing to have employed the technical scheme that the present invention provides, the daily spot check silicon chip of dielectric materials deposition machine is carried out
After ultraviolet curing processes, then carry out wet-cleaning and drying process, can effectively remove the dielectric materials of wafer surface, simultaneously
Ensure the tidiness of silicon chip surface so that the silicon chip after the present invention processes can be again with, and then reduce and produce into
This.
Above presently preferred embodiments of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, the equipment and the structure that do not describe in detail the most to the greatest extent are construed as giving reality with the common mode in this area
Execute；Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize the disclosure above
Method and technology contents technical solution of the present invention is made many possible variations and modification, or be revised as equivalent variations etc.
Effect embodiment, this has no effect on the flesh and blood of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the present invention
In the range of technical scheme protection.
Claims (4)
1. the method removing silicon chip surface dielectric materials, it is characterised in that comprise the following steps:
A surface is provided to have the silicon chip of low dielectric material；
After described silicon chip is carried out ultraviolet curing process, continue that this silicon chip is carried out successively the first cleaning and second and clean
Technique；
Described silicon chip is dried process；
Wherein, after using Fluohydric acid. that described silicon chip is carried out described first cleaning, deionized water is used to carry out described second
Cleaning；
The reaction temperature that ultraviolet curing processes is 350～400 DEG C, and the time is 300s.
The method of removal silicon chip surface dielectric materials the most according to claim 1, it is characterised in that described Fluohydric acid. is molten
The concentration of liquid is 48%～52%, and scavenging period is 20s～60s.
The method of removal silicon chip surface dielectric materials the most according to claim 1, it is characterised in that be passed through nitrogen to institute
State silicon chip and be dried technique.
The method of removal silicon chip surface dielectric materials the most according to claim 3, it is characterised in that carry out described being dried
During technique, nitrogen gas concn >=99%, flow is 5000～10000sccm, and the response time is 35～45s.
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| CN201310222244.XA CN103295881B (en) | 2013-06-04 | 2013-06-04 | The method removing silicon chip surface dielectric materials |
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| CN201310222244.XA CN103295881B (en) | 2013-06-04 | 2013-06-04 | The method removing silicon chip surface dielectric materials |
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| CN103295881A CN103295881A (en) | 2013-09-11 |
| CN103295881B true CN103295881B (en) | 2016-08-31 |
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| CN109108032A (en) * | 2018-06-25 | 2019-01-01 | 上海华力微电子有限公司 | A kind of unproductive method for cleaning wafer |
| CN111921976B (en) * | 2020-07-15 | 2022-02-01 | 中国电子科技集团公司第二十四研究所 | Method for improving cleaning quality of wedge welding cleaver |
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|---|---|---|---|---|
| US6277203B1 (en) * | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
| CN1639846A (en) * | 2002-01-28 | 2005-07-13 | 三菱化学株式会社 | Cleaning liquid for substrate for semiconductor device and cleaning method |
| CN101191227A (en) * | 2006-11-29 | 2008-06-04 | 中国科学院兰州化学物理研究所 | Method for preparing ultra-hydrophobic surface on titanium-alloy |
| CN101356629A (en) * | 2005-11-09 | 2009-01-28 | 高级技术材料公司 | Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon |
| CN102122605A (en) * | 2010-01-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Cleaning device and cleaning method for parts of low-k dielectric material deposition device |
| CN102886211A (en) * | 2012-09-28 | 2013-01-23 | 天津大学 | Solvent-free preparation method of aperture controllable porous film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
| US7723226B2 (en) * | 2007-01-17 | 2010-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio |
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2013
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6277203B1 (en) * | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
| CN1639846A (en) * | 2002-01-28 | 2005-07-13 | 三菱化学株式会社 | Cleaning liquid for substrate for semiconductor device and cleaning method |
| CN101356629A (en) * | 2005-11-09 | 2009-01-28 | 高级技术材料公司 | Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon |
| CN101191227A (en) * | 2006-11-29 | 2008-06-04 | 中国科学院兰州化学物理研究所 | Method for preparing ultra-hydrophobic surface on titanium-alloy |
| CN102122605A (en) * | 2010-01-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Cleaning device and cleaning method for parts of low-k dielectric material deposition device |
| CN102886211A (en) * | 2012-09-28 | 2013-01-23 | 天津大学 | Solvent-free preparation method of aperture controllable porous film |
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