CN102122605A - Cleaning device and cleaning method for parts of low-k dielectric material deposition device - Google Patents
Cleaning device and cleaning method for parts of low-k dielectric material deposition device Download PDFInfo
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- CN102122605A CN102122605A CN2010100225736A CN201010022573A CN102122605A CN 102122605 A CN102122605 A CN 102122605A CN 2010100225736 A CN2010100225736 A CN 2010100225736A CN 201010022573 A CN201010022573 A CN 201010022573A CN 102122605 A CN102122605 A CN 102122605A
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Abstract
The invention relates to a cleaning device and a cleaning method for parts of a low-k dielectric material deposition device, wherein the cleaning method for the parts of the low-k dielectric material deposition device comprises the following steps: providing the parts of the low-k dielectric material deposition device after multiple deposition of low-k dielectric material; adopting the cleaning device to heat the parts of the low-k dielectric material deposition device, and adopting ultraviolet rays for processing; cleaning the parts of the low-k dielectric material deposition device with diluted hydrofluoric acid; cleaning the parts of the low-k dielectric material deposition device with deionized water; and drying the parts of the low-k dielectric material deposition device. By adopting the cleaning device and the cleaning method, the stacking of the low-k dielectric material can be completely removed, the cost of the low dielectric material deposition device can be reduced, and the effects of environment friendliness and reutilization can be further achieved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly the cleaning device and the cleaning method of low k value dielectric deposition equipment unit.
Background technology
In very lagre scale integrated circuit (VLSIC) technology, the silicon dioxide with thermal stability, moisture resistance characteristics is the main insulating material that metal interconnected circuit chien shih is used always, and metallic aluminium then is the main material of circuit interconnection lead in the chip.Yet, with respect to the microminiaturization of element and the increase of integrated level, the interconnecting lead number constantly increases in the circuit, make resistance (R) and electric capacity (C) in the interconnecting lead framework produce ghost effect, cause serious transmission delay (RC Delay), reaching in the more advanced technology in 130 nanometers becomes the limited principal element of signal transmission speed in the circuit.
Therefore, prior art adopts new low electrical resistant material copper and low k value dielectric material to reduce transmission delay in semiconductor technology, has low k value dielectric material and generally includes: silica (FSG) and polytetrafluoroethylene (PTFE) that fluorine mixes.
Along with further developing of semiconductor technology, the low k value dielectric material (dielectric constant is lower than 3) that dielectric constant is lower is applied in the semiconductor technology, can find to comprise the additional information of the low k value dielectric material formation method of carbon in application number is 200480000214.3 Chinese patent.
The formation technology of above-mentioned low k value dielectric material is generally chemical vapor deposition method, the parts of the low k value dielectric deposition equipment of the low k value dielectric material of deposition, for example chemical vapour deposition (CVD) shower nozzle (ShowHead) behind the repeatedly low k value dielectric material of deposition, needs to clean usually.But the low k value dielectric deposition equipment unit of the low k value dielectric material of deposition is difficult to be cleaned totally.
Summary of the invention
The problem that the present invention solves is that the low k value dielectric deposition equipment unit of the low k value dielectric material of deposition is difficult to be cleaned totally.
For addressing the above problem, the invention provides a kind of low k value dielectric deposition equipment unit cleaning method, comprising:
Low k value dielectric deposition equipment unit behind the low k value dielectric material of deposition is repeatedly put into cleaning device;
Adopting cleaning device that described low k value dielectric deposition equipment unit is heated and carry out ultraviolet light handles;
After described low k value dielectric deposition equipment unit taken out, adopt the hydrofluoric acid clean of dilution from cleaning device;
Described low k value dielectric deposition equipment unit is adopted washed with de-ionized water;
Dry described low k value dielectric deposition equipment unit.
The present inventor proposes a kind of low k value dielectric deposition equipment unit cleaning device, comprising: cabinet;
Be located at the air inlet in the cabinet;
Be located at the gas outlet in the cabinet;
Be located at the support in the cabinet;
Be located at ultraviolet light emitter in the cabinet;
Be located in the cabinet or the outer heating apparatus of cabinet.
Compared with prior art, the present invention has the following advantages: the invention provides low k value dielectric deposition equipment unit cleaning device and cleaning method, the present invention can remove the accumulation of low k value dielectric material fully, and to deposition dielectric materials equipment reduce cost and environmental protection utilizes effect again, avoided cleaning sordid low k value dielectric deposition equipment unit pollution deposit film when deposit film.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is low k value dielectric deposition equipment unit cleaning device one an embodiment schematic diagram provided by the invention;
Fig. 2 is the another embodiment schematic diagram of low k value dielectric deposition equipment unit cleaning device provided by the invention;
Fig. 3 is the another embodiment schematic diagram of low k value dielectric deposition equipment unit cleaning device provided by the invention;
Fig. 4 is the schematic flow sheet of low k value dielectric deposition equipment unit cleaning method provided by the invention.
Embodiment
By background technology as can be known, the parts of the low k value dielectric deposition equipment of the low k value dielectric material of deposition, for example chemical vapour deposition (CVD) shower nozzle (Show Head) behind the repeatedly low k value dielectric material of deposition, needs to clean usually.But the low k value dielectric deposition equipment unit of the low k value dielectric material of deposition is difficult to be cleaned totally.
The present inventor is through research; find to deposit the common compound that can have C-Si-O on the surface of low k value dielectric deposition equipment unit of low k value dielectric material; and existing technology of cleaning mainly is the compound at Si-O, the poor effect that the compound of C-Si-O is cleaned.
For this reason, the present inventor proposes a kind of low k value dielectric deposition equipment unit cleaning device, comprising: cabinet; Be located at the air inlet in the cabinet; Be located at the gas outlet in the cabinet; Be located at the support in the cabinet; Be located at ultraviolet light emitter in the cabinet; Be located in the cabinet or outer heating apparatus.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
With reference to figure 1, Fig. 1 comprises: cabinet 100 for low k value dielectric deposition equipment unit cleaning device one embodiment schematic diagram; Be located at air inlet 110 in the cabinet 100; Be located at the gas outlet 120 in the cabinet 100; Be positioned at the support 130 of cabinet 100; Be positioned at cabinet 100 ultraviolet light emitters 140; Be positioned at the outer heating apparatus 150 of cabinet.
Be located at air inlet 110 in the cabinet 100, described air inlet 110 is communicated with admission line, be used in described cabinet 100, introducing high temperature inert gas, described inert gas comprises helium, neon or argon gas, high temperature inert gas is used for keeping certain flowing pressure effect on low k value dielectric deposition equipment unit surface to be cleaned, plays the effect of washing away low k value dielectric deposition equipment unit to be cleaned.
Be located at the gas outlet 120 in the cabinet 100, described gas outlet 120 is communicated with exhaust gas processing device, is used for the gas in the described cabinet 100 is expelled to exhaust gas processing device.
Be positioned at the support 130 of cabinet 100, described support 130 is used to place low k value dielectric deposition equipment unit, described support 100 is the engraved structure support, described support 100 can adopt to link up with to be located at also can adopt in the cabinet 100 to prop up and be set up in the cabinet 100, and described engraved structure support 100 helps improving the high temperature inert gas of air inlet 110 introducings to being positioned over the low k value dielectric deposition equipment unit scouring effect on the support 130.
Be positioned at cabinet 100 ultraviolet light emitters 140, described ultraviolet light emitter 140 can be ultra-violet lamp, described ultraviolet light emitter 140 preferably is installed on described support 130 belows, makes the ultraviolet light of ultraviolet light emitter 140 emissions can fully handle low k value dielectric deposition equipment unit.
It needs to be noted that the distance of described air inlet 110 and support 130 is less than 10 centimetres, described effect of washing away low k value dielectric deposition equipment unit to be cleaned can be better.
With reference to figure 2, Fig. 2 comprises: cabinet 200 for low another embodiment schematic diagram of k value dielectric deposition equipment unit cleaning device; Be located at air inlet 210 in the cabinet 200; Be located at the gas outlet 220 in the cabinet 200; Be positioned at the support 230 of cabinet 200; Be positioned at cabinet 200 ultraviolet light emitters 240; Be positioned at the heating apparatus 250 of cabinet.
With reference to figure 3, Fig. 3 comprises: cabinet 300 for the low another embodiment schematic diagram of k value dielectric deposition equipment unit cleaning device; Be located at air inlet 310 in the cabinet 300; Be located at the gas outlet 320 in the cabinet 300; Be positioned at the support 330 of cabinet 300; Be positioned at cabinet 300 ultraviolet light emitters 340, described ultraviolet light emitter 340 is positioned at support 330 tops; Be positioned at the heating apparatus 350 of cabinet.
Working method below in conjunction with low k value dielectric deposition equipment unit cleaning device embodiment one, low k value dielectric deposition equipment unit cleaning equipment of the present invention is described the working method that low other embodiment of k value dielectric deposition equipment unit cleaning device of the present invention can reference example one.
At first, the low k value dielectric deposition equipment unit behind the low k value dielectric material of deposition repeatedly is positioned on the described support 130.
Then, adopt the described cabinet 100 of heater 150 heating, described heating-up temperature is preferably 200 ℃ to 250 ℃.
When cabinet 100 temperature rise to 200 ℃ to 250 ℃, feed high temperature inert gas and open ultraviolet light emitter 140, the low k value dielectric deposition equipment unit of ultraviolet light irradiation that makes 140 emissions of ultraviolet light emitter.
Low k value dielectric deposition equipment unit after the described processing is adopted 200: 1 to 800: 1 hydrofluoric acid clean, and concrete cleaning can here repeat no more with reference to existing low k value dielectric deposition equipment unit cleaning method.
Fig. 4 is the schematic flow sheet of the low k value dielectric deposition equipment unit cleaning method of one embodiment of the present of invention.
Step S101 provides repeatedly the low k value dielectric deposition equipment unit after deposition is hanged down k value dielectric material.
By background technology as can be known, the formation technology of low k value dielectric material is generally chemical vapor deposition method, and described low k value dielectric material is the low k value dielectric material that comprises carbon.
Described chemical vapor deposition method can adopt low k value dielectric deposition equipment usually; have low k value dielectric deposition equipment unit in the described low k value dielectric deposition equipment, described low k value dielectric deposition equipment unit comprises: chemical vapour deposition (CVD) shower nozzle and chemical gaseous phase spin-coating equipment parts.With the chemical vapour deposition (CVD) shower nozzle is example, be formed with the gas passage of multichannel in the chemical vapour deposition (CVD) shower nozzle, in order to the reacting gas of even step chemical vapour deposition, in chemical vapor deposition processes repeatedly, can be formed with the accumulation of deposition materials in the described chemical vapour deposition (CVD) shower nozzle.
In the existing processes, behind chemical vapor deposition processes repeatedly, can clean low k value dielectric deposition equipment unit, described cleaning is cleaned the accumulation of removal deposition materials for adopting acid cleaning fluid.
But; the present inventor finds; existing cleaning is not good to the low k value dielectric deposition equipment unit cleaning performance that deposits low k value dielectric material; after further research; the inventor finds; the low k value dielectric deposition equipment unit that deposited low k value dielectric material usually can be on the surface with the compound of C-Si-O, and the cleaning fluid of existing acidity is difficult to remove the accumulation of the compound that hangs down C-Si-O.
For this reason, the present invention proposes a kind of optimization cleaning, as described in step S102, adopts low k value dielectric deposition equipment unit cleaning device provided by the invention that described low k value dielectric deposition equipment unit heating and employing ultraviolet light are handled.
Described low k value dielectric deposition equipment unit cleaning device is to described low k value dielectric deposition equipment unit heating and adopt the ultraviolet light processing to repeat no more with reference to the foregoing description here.
Concrete, described low k value dielectric deposition equipment unit is heated to 200 ℃ to 250 ℃, and described employing ultraviolet light was handled 25 minutes to 30 minutes.
Step S102 can decompose the accumulation of the compound of C-Si-O makes the accumulation of described compound be easy to be cleaned by follow-up treatment process.
Preferably, to described low k value dielectric deposition equipment unit heating and adopt that can also to feed temperature in the ultraviolet light processing procedure be 200 ℃ to 250 ℃ inert gas, for example: helium, neon or argon gas.
The inert gas that feeds 200 ℃ to 250 ℃ is used for keeping certain flowing pressure effect on low k value dielectric deposition equipment unit surface to be cleaned, play the effect of washing away low k value dielectric deposition equipment unit to be cleaned, can take away the accumulation that part is formed on the compound of the C-Si-O that hangs down k value dielectric deposition equipment unit surface, make that the low k value dielectric deposition equipment unit after the subsequent treatment process cleaning more cleans.
Step S103 adopts the hydrofluoric acid clean of diluting to described low k value dielectric deposition equipment unit.
Specifically comprise: described low k value dielectric deposition equipment unit was positioned over clean container 0.7 minute to 5 minutes, is injected with concentration in the described clean container and is 200: 1 to 800: 1 hydrofluoric acid.Described concrete scavenging period can also be according to the ulking thickness of the compound of the C-Si-O in the low k value dielectric deposition equipment unit that cleans and proper extension.
Step S103 is used to remove the accumulation of the compound of the C-Si-O after the decomposition.
Step S104 adopts washed with de-ionized water to described low k value dielectric deposition equipment unit.
Adopt washed with de-ionized water to be used to clean the hydrofluoric acid of the dilution that remains in low k value dielectric deposition equipment unit surface to described low k value dielectric deposition equipment unit.
Step S105 is dried described low k value dielectric deposition equipment unit.
The concrete technology of the described low k value dielectric deposition equipment unit of described oven dry is: select baking oven or other dried equipment for use, baking temperature is 150 ℃ to 200 ℃, time is 25 minutes to 30 minutes, and above-mentioned technology is used to remove the water of described low k value dielectric deposition equipment unit.
The invention provides low k value dielectric deposition equipment unit cleaning device and cleaning method, the present invention can remove the accumulation of low k value dielectric material fully, and to deposition dielectric materials equipment reduce cost and environmental protection utilizes effect again, avoided cleaning sordid low k value dielectric deposition equipment unit pollution deposit film when deposit film.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (14)
1. the cleaning device of one kind low k value dielectric deposition equipment unit is characterized in that, comprising:
Cabinet;
Be located at the air inlet in the cabinet;
Be located at the gas outlet in the cabinet;
Be located at the support in the cabinet;
Be located at ultraviolet light emitter in the cabinet;
Be located in the cabinet or the outer heating apparatus of cabinet.
2. cleaning device as claimed in claim 1 is characterized in that described air inlet is communicated with admission line, is used for introducing high temperature inert gas in described cabinet.
3. cleaning device as claimed in claim 2 is characterized in that, described inert gas is: helium, neon or argon gas.
4. cleaning device as claimed in claim 1 is characterized in that, described ultraviolet light emitter is a ultra-violet lamp.
5. cleaning device as claimed in claim 1 is characterized in that described gas outlet is communicated with exhaust gas processing device.
6. cleaning device as claimed in claim 1 is characterized in that, described support is the engraved structure support.
7. cleaning device as claimed in claim 1, the distance of described air inlet and support is less than 10 centimetres.
8. a cleaning method that adopts each described cleaning device in the claim 1 to 7 to low k value dielectric deposition equipment unit is characterized in that, comprising:
Low k value dielectric deposition equipment unit behind the low k value dielectric material of deposition is repeatedly put into cleaning device;
Adopting cleaning device that described low k value dielectric deposition equipment unit is heated and carry out ultraviolet light handles;
After described low k value dielectric deposition equipment unit taken out, adopt the hydrofluoric acid clean of dilution from cleaning device;
Described low k value dielectric deposition equipment unit is adopted washed with de-ionized water;
Dry described low k value dielectric deposition equipment unit.
9. cleaning method as claimed in claim 8, it is characterized in that, described to described low k value dielectric deposition equipment unit heating and adopt ultraviolet light to handle concrete technological parameter to be: described low k value dielectric deposition equipment unit is heated to 200 ℃ to 250 ℃, and to described employing ultraviolet light processing 25 minutes to 30 minutes.
10. cleaning method as claimed in claim 8 is characterized in that, described low k value dielectric deposition equipment unit heating and employing ultraviolet light treatment step are also comprised: the feeding temperature is 200 ℃ to 250 ℃ a inert gas.
11. cleaning method as claimed in claim 8 is characterized in that, described low k value dielectric deposition equipment unit is the chemical vapour deposition (CVD) shower nozzle.
12. cleaning method as claimed in claim 8 is characterized in that, the low dielectric constant material that described low k value dielectric material is a carbon containing.
13. cleaning method as claimed in claim 8 is characterized in that, the hydrofluoric acid concentration of described dilution is 200: 1 to 800: 1 a hydrofluoric acid.
14. cleaning method as claimed in claim 8 is characterized in that, dries the concrete technological parameter of described low k value dielectric deposition equipment unit to be: select baking oven or other dried equipment for use, baking temperature is 150 ℃ to 200 ℃, and the time is 25 minutes to 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100225736A CN102122605A (en) | 2010-01-08 | 2010-01-08 | Cleaning device and cleaning method for parts of low-k dielectric material deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100225736A CN102122605A (en) | 2010-01-08 | 2010-01-08 | Cleaning device and cleaning method for parts of low-k dielectric material deposition device |
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| CN102122605A true CN102122605A (en) | 2011-07-13 |
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| CN2010100225736A Pending CN102122605A (en) | 2010-01-08 | 2010-01-08 | Cleaning device and cleaning method for parts of low-k dielectric material deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295881A (en) * | 2013-06-04 | 2013-09-11 | 上海华力微电子有限公司 | Method for removing low-k dielectric materials on surfaces of silicon wafers |
-
2010
- 2010-01-08 CN CN2010100225736A patent/CN102122605A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295881A (en) * | 2013-06-04 | 2013-09-11 | 上海华力微电子有限公司 | Method for removing low-k dielectric materials on surfaces of silicon wafers |
| CN103295881B (en) * | 2013-06-04 | 2016-08-31 | 上海华力微电子有限公司 | The method removing silicon chip surface dielectric materials |
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Effective date of registration: 20121105 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20110713 |