CN103280468A - Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell - Google Patents
Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell Download PDFInfo
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- CN103280468A CN103280468A CN2013102179882A CN201310217988A CN103280468A CN 103280468 A CN103280468 A CN 103280468A CN 2013102179882 A CN2013102179882 A CN 2013102179882A CN 201310217988 A CN201310217988 A CN 201310217988A CN 103280468 A CN103280468 A CN 103280468A
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Abstract
The invention belongs to the technical field of the solar energy technology and particularly relates to a back electrode structure of a crystalline silicon solar cell with a passivated back and a screen printing plate used by the crystalline silicon solar cell. The back electrode structure of the crystalline silicon solar cell with the passivated back comprises a passivated medium membrane arranged on the back of a solar cell silicon substrate, a back sliver electrode and a back aluminum electrode, wherein the back sliver electrode and the back aluminum electrode are arranged on the passivated medium membrane. A hollow-out region is arranged in the back silver electrode. The back silver electrode and the back aluminum electrode compensate for each other. The back silver electrode does not coincide with an opened membrane region of the passivated medium membrane or just partially coincides with the opened membrane region. The back silver electrode is suitable for a point-contact crystalline silicon solar cell with a passivated back or a line-contact crystalline silicon solar cell with a passivated back. The back electrode structure greatly improves a back passivating effect of the cell and effectively improves electrical properties of open-circuit voltage, a short-circuit current and the like. In addition, the back electrode structure is low in manufacturing cost and capable of being conveniently matched with a regular industrial production line and massive industrialized production is easy to achieve.
Description
Technical field
The invention belongs to technical field of solar, be specifically related to a kind of passivating back crystal-silicon solar cell back electrode structure and used half tone.
Background technology
In recent years, the crystal-silicon solar cell market demand constantly enlarged, and also required more and more higher to the solar cell conversion efficiency.Passivating back local contact solar battery structure can reduce the recombination rate on crystal-silicon solar cell back of the body surface effectively, improves open circuit voltage and short circuit current, is one of method that realizes by efficient conversion solar cell.
In the prior art, passivating back local contact solar cell adopts deielectric-coating passivation battery back of the body surface, by methods such as laser deielectric-coating is carried out local and opens film, then by method for printing screen printing back of the body silver electrode and back of the body aluminium electrode.Behind the battery sintering, will form p+ local back of the body surface field with the silicon substrate reaction opening diaphragm area back of the body aluminium electrode, this local back of the body surface field contact help to reduce battery series resistance, improve the battery passivation effect, reduce the photo-generated carrier recombination rate.Yet, in traditional passivating back local contact solar battery structure, the back silver electrode often also can deielectric-coating place, cover part hold diaphragm area, like this, in these zones, can not form local back of the body surface field, so that can influence electric properties such as entire cell open circuit voltage and short circuit current.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of back electrode structure and used half tone of passivating back crystal-silicon solar cell are provided, this back electrode structure improves the passivating back effect of battery greatly, and electric properties such as open circuit voltage and short circuit current are all effectively improved; In addition, this back electrode structure preparation cost is low, can be complementary with conventional industrial production line easily, is easy to realize large batch of suitability for industrialized production.
In order to realize above-mentioned technical purpose, the present invention realizes by following technical scheme:
The back electrode structure of a kind of passivating back crystal-silicon solar cell of the present invention, comprise the dielectric passivation film that places the solar cell silicon chip back side, place back of the body silver electrode and back of the body aluminium electrode on the dielectric passivation film, described back of the body silver electrode inside is provided with the hollow out zone, described back of the body aluminium electrode forms complementation with back of the body silver electrode, namely carry on the back the aluminium electrode cover have or not the zone of carrying on the back silver electrode, comprise the hollow out zone of carrying on the back silver electrode.In addition, described back of the body silver electrode and dielectric passivation film to open diaphragm area overlapping or overlap, be applicable to the contact of passivating back point or line contact crystalline silicon solar cell.
As the further improvement of above-mentioned technology, described back of the body silver electrode has one or more repeated arrangement hollow outs zone, the combination that is shaped as circle or polygon or above-mentioned shape in its hollow out zone.
Specifically, the quantity of described back of the body silver electrode is 2 to 5, and the width range of described back of the body silver electrode is 1 to 5 millimeter, and length range is 120 to 156 millimeters.
In the present invention, the relation of opening between the diaphragm area of described back of the body silver electrode and passivating film has following three kinds of versions:
First kind, the diaphragm area of opening of described dielectric passivation film is opened diaphragm area for the linearity bottom back of the body silver electrode hollow out zone, described back of the body silver electrode is vertical with the pattern direction that the linearity of described dielectric passivation film is opened diaphragm area, at this moment, described back of the body silver electrode pierced pattern is rectangle, described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 0.5 to 5 millimeter.
Second kind, the diaphragm area of opening of described dielectric passivation film is opened diaphragm area for the linearity bottom back of the body silver electrode hollow out zone, it is parallel that described back of the body silver electrode and the linearity of described dielectric passivation film are opened the diaphragm area pattern direction, at this moment, described back of the body silver electrode pierced pattern is rectangle, described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 120 to 156 millimeters.
The third, the diaphragm area of opening of described dielectric passivation film is opened diaphragm area for the point corresponding to bottom, back of the body silver electrode hollow out zone contacts, and described back of the body silver electrode pierced pattern is the combination of circle, polygon or above-mentioned shape;
In the present invention, described back of the body silver electrode is 0 to 30% in the coverage rate of opening diaphragm area corresponding to the dielectric passivation film.
The invention also discloses the used half tone of the back electrode of above-mentioned passivating back crystal-silicon solar cell, specifically comprise back of the body aluminium electrode half tone and back of the body silver electrode half tone, its structure includes the half tone body, and described half tone body is provided with for constituting figure and forms described back of the body silver electrode and the pattern that makes the mesh that slurry passes through of carrying on the back the aluminium electrode.
Compared with prior art, the invention has the beneficial effects as follows:
(1) the present invention is provided with the hollow out zone owing to will carry on the back silver electrode inside, make when the opening diaphragm area and can form local back of the body surface field of dielectric passivation film, the passivating back effect that effectively improves battery improves, and electric properties such as same time open circuit voltage and short circuit current all improve;
(2) the back electrode structure preparation cost of passivating back crystal-silicon solar cell of the present invention is cheap, is easy to be complementary with conventional industrial production line, is easy to realize large batch of suitability for industrialized production.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in detail:
Fig. 1 is passivating back crystal-silicon solar cell structural representation of the present invention (comprising the back electrode structure);
Fig. 2 is the embodiment of the invention one described back of the body silver electrode half tone structural representation;
Fig. 3 is the embodiment of the invention one described back of the body aluminium electrode network plate structure schematic diagram;
Fig. 4 is the embodiment of the invention two described back of the body silver electrode half tone structural representations;
Fig. 5 is the embodiment of the invention one described back of the body aluminium electrode network plate structure schematic diagram;
Fig. 6 is the embodiment of the invention three described back of the body silver electrode half tone structural representations;
Fig. 7 is the embodiment of the invention three described back of the body aluminium electrode network plate structure schematic diagrames.
Embodiment
As shown in Figure 1, the passivating back crystal-silicon solar cell comprises silicon chip 20, places front surface antireflective coating 30 and preceding electrode 40 and the back electrode structure 10 of silicon chip 20 front surfaces.
Specify the back electrode structure 10 of passivating back crystal-silicon solar cell of the present invention below in conjunction with Fig. 1.
As shown in Figure 1, the back electrode structure 10 of described passivating back crystal-silicon solar cell, comprise the dielectric passivation film 11 that places solar cell silicon chip 20 back sides, place back of the body silver electrode 12 and back of the body aluminium electrode 13 on the dielectric passivation film 11, described back of the body silver electrode 12 inside are provided with the hollow out zone, described back of the body aluminium electrode 13 forms complementary with back of the body silver electrode 12, namely carry on the back aluminium electrode 13 and cover the zone of not having back of the body silver electrode 12, comprise the hollow out zone of carrying on the back silver electrode 12, like this, back of the body aluminium electrode 13 will maximize with the gross area that silicon chip 20 contact areas will form p+ local back of the body surface field 14, and it is compound to be conducive to reduce cell backside, improve open circuit voltage, finally promote battery efficiency.
In addition, described back of the body silver electrode 12 and dielectric passivation film 11 to open diaphragm area overlapping or overlap, be applicable to that passivating back point contacts or the line contact crystalline silicon solar cell.In the present invention, described back of the body silver electrode 12 is 0 to 30% in the coverage rate of opening diaphragm area corresponding to dielectric passivation film 11.
In the present invention, described back of the body silver electrode 12 has one or more repeated arrangement hollow outs zone, the combination that is shaped as circle or polygon or above-mentioned shape in its hollow out zone etc., the quantity of described back of the body silver electrode 12 is 2 to 5, the width range of described back of the body silver electrode 12 is 1 to 5 millimeter, and length range is 120 to 156 millimeters.
In the present invention, the relation of opening between the diaphragm area of described back of the body silver electrode and passivating film has following three kinds of versions, and specifically the structure by each back electrode half tone describes:
Embodiment one:
As shown in Figure 1 to Figure 3, the diaphragm area of opening of described dielectric passivation film 11 is opened diaphragm area for the linearity bottom back of the body silver electrode 12 hollow out zones, described back of the body silver electrode 12 is vertical mutually with the pattern direction that the linearity of described dielectric passivation film 11 is opened diaphragm area, at this moment, described back of the body silver electrode 12 pierced patterns are rectangle, described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 0.5 to 5 millimeter.
The half tone 50 of described back of the body silver electrode 12 comprises half tone body 51, includes the hollow out zone corresponding to the pattern 52(that carries on the back silver electrode 12).
The half tone 60 of described back of the body silver electrode 12 comprises half tone body 61, includes the hollow out zone corresponding to the pattern 62(that carries on the back aluminium electrode 13).
By Fig. 2, Fig. 3 as can be known, the pattern 62 of the pattern 52 of the back of the body silver electrode 12 on the above-mentioned two half tone bodies 51,61 and back of the body aluminium electrode 13 is complementary fully.
Embodiment two:
This embodiment and embodiment one are basic identical, its difference is: as Fig. 1, Fig. 4, shown in Figure 5, it is parallel that described back of the body silver electrode 12 and the linearity of described dielectric passivation film 11 are opened the diaphragm area pattern direction, at this moment, described back of the body silver electrode 12 pierced patterns are rectangle, described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 120 to 156 millimeters.
The half tone 50a of described back of the body silver electrode 12 comprises half tone body 51a, includes the hollow out zone corresponding to the pattern 52a(that carries on the back silver electrode 12).
The half tone 60a of described back of the body silver electrode 12 comprises half tone body 61a, includes the hollow out zone corresponding to the pattern 62a(that carries on the back aluminium electrode 13).
By Fig. 4, Fig. 5 as can be known, the pattern 62a of the pattern 52a of the back of the body silver electrode 12 on above-mentioned two half tone body 51a, the 61a and back of the body aluminium electrode 13 is complementary fully.
Embodiment three:
This embodiment and embodiment one are basic identical, its difference is: as Fig. 1, Fig. 6, shown in Figure 7, described dielectric passivation, 11 the diaphragm area of opening is opened diaphragm area for the point corresponding to bottom, back of the body silver electrode hollow out zone contacts, and described back of the body silver electrode 12 pierced patterns are the combination of circle, polygon or above-mentioned shape.
The half tone 50b of described back of the body silver electrode 12 comprises half tone body 51b, includes the hollow out zone corresponding to the dot pattern 52b(that carries on the back silver electrode 12).
The half tone 60b of described back of the body silver electrode 12 comprises half tone body 61b, includes the hollow out zone corresponding to the pattern 62b(that carries on the back aluminium electrode 13).
By Fig. 6, Fig. 7 as can be known, the pattern 62b of the pattern 52b of the correspondence of the back of the body silver electrode 12 on above-mentioned two half tone body 51b, the 61b and back of the body aluminium electrode 13 is complementary fully.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or modification are not broken away from the spirit and scope of the present invention, if these are changed and modification belongs within claim of the present invention and the equivalent technologies scope, then the present invention also comprises these changes and modification.
Claims (10)
1. the back electrode structure of a passivating back crystal-silicon solar cell, it is characterized in that: comprise the dielectric passivation film that places the solar cell silicon chip back side, place back of the body silver electrode and back of the body aluminium electrode on the dielectric passivation film, described back of the body silver electrode inside is provided with the hollow out zone, described back of the body aluminium electrode forms complementation with back of the body silver electrode, described back of the body silver electrode and dielectric passivation film to open diaphragm area overlapping or overlap, be applicable to the contact of passivating back point or line contact crystalline silicon solar cell.
2. the back electrode structure of passivating back crystal-silicon solar cell according to claim 1, it is characterized in that: described back of the body silver electrode has one or more repeated arrangement hollow outs zone, the combination that is shaped as circle or polygon or above-mentioned shape in its hollow out zone.
3. the back electrode structure of passivating back crystal-silicon solar cell according to claim 1 and 2, it is characterized in that: the quantity of described back of the body silver electrode is 2 to 5, and the width range of described back of the body silver electrode is 1 to 5 millimeter, and length range is 120 to 156 millimeters.
4. the back electrode structure of passivating back crystal-silicon solar cell according to claim 3, it is characterized in that: the diaphragm area of opening of described dielectric passivation film is opened diaphragm area for the linearity bottom back of the body silver electrode hollow out zone, and described back of the body silver electrode is vertical with the pattern direction that the linearity of described dielectric passivation film is opened diaphragm area.
5. the back electrode structure of passivating back crystal-silicon solar cell according to claim 4 is characterized in that:, described back of the body silver electrode pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 0.5 to 5 millimeter.
6. the back electrode structure of passivating back crystal-silicon solar cell according to claim 3, it is characterized in that: described dielectric passivation film open diaphragm area for opening diaphragm area corresponding to the linearity of bottom, back of the body silver electrode hollow out zone, it is parallel that described back of the body silver electrode and the linearity of described dielectric passivation film are opened the diaphragm area pattern direction.
7. the back electrode structure of passivating back crystal-silicon solar cell according to claim 6, it is characterized in that: described back of the body silver electrode pierced pattern is rectangle, and described pierced pattern width range is 0.1 millimeter to 1 millimeter, and length is 120 to 156 millimeters.
8. the back electrode structure of passivating back crystal-silicon solar cell according to claim 1, it is characterized in that: the diaphragm area of opening of described dielectric passivation film is opened diaphragm area for the point corresponding to bottom, back of the body silver electrode hollow out zone contacts, and described back of the body silver electrode pierced pattern is the combination of circle, polygon or above-mentioned shape.
9. the back electrode structure of passivating back crystal-silicon solar cell according to claim 1, it is characterized in that: described back of the body silver electrode is 0 to 30% in the coverage rate of opening diaphragm area corresponding to the dielectric passivation film.
10. the used half tone of the back electrode of passivating back crystal-silicon solar cell according to claim 1, it is characterized in that: comprise the half tone body, described half tone body is provided with for constituting figure and forms described back of the body silver electrode and the pattern that makes the mesh that slurry passes through of carrying on the back the aluminium electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310217988.2A CN103280468B (en) | 2013-06-04 | 2013-06-04 | The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used |
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| CN201310217988.2A CN103280468B (en) | 2013-06-04 | 2013-06-04 | The back electrode structure of a kind of passivating back crystal-silicon solar cell and half tone used |
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| CN103280468B CN103280468B (en) | 2016-08-24 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576836A (en) * | 2015-01-23 | 2015-04-29 | 浙江晶科能源有限公司 | Method for manufacturing back-passivated solar cells |
| TWI560892B (en) * | 2015-08-12 | 2016-12-01 | Motech Ind Inc | Solar cell |
| CN108630767A (en) * | 2018-05-28 | 2018-10-09 | 南京日托光伏科技股份有限公司 | A method of reduction MWT battery backplate area is hidden to be split |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108172635A (en) * | 2016-12-07 | 2018-06-15 | 广西大学 | A kind of novel silicon wafer solar cell |
| CN106952970A (en) * | 2017-03-24 | 2017-07-14 | 苏州腾晖光伏技术有限公司 | A kind of PERC batteries and preparation method thereof |
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| WO2010000232A1 (en) * | 2008-06-30 | 2010-01-07 | Osram Opto Semiconductors Gmbh | Optoelectronic device for reducing the effects of concentrators shielding off the electrodes |
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| CN104576836A (en) * | 2015-01-23 | 2015-04-29 | 浙江晶科能源有限公司 | Method for manufacturing back-passivated solar cells |
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| TWI560892B (en) * | 2015-08-12 | 2016-12-01 | Motech Ind Inc | Solar cell |
| CN108630767A (en) * | 2018-05-28 | 2018-10-09 | 南京日托光伏科技股份有限公司 | A method of reduction MWT battery backplate area is hidden to be split |
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