CN106952970A - A kind of PERC batteries and preparation method thereof - Google Patents
A kind of PERC batteries and preparation method thereof Download PDFInfo
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- CN106952970A CN106952970A CN201710181396.8A CN201710181396A CN106952970A CN 106952970 A CN106952970 A CN 106952970A CN 201710181396 A CN201710181396 A CN 201710181396A CN 106952970 A CN106952970 A CN 106952970A
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- laser
- silver electrode
- silicon substrate
- body silver
- passivation layer
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 31
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 31
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000004332 silver Substances 0.000 claims abstract description 71
- 229910052709 silver Inorganic materials 0.000 claims abstract description 71
- 238000002161 passivation Methods 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 238000000608 laser ablation Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 238000003780 insertion Methods 0.000 claims abstract description 6
- 230000037431 insertion Effects 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 238000002679 ablation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000012358 sourcing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of PERC batteries and preparation method thereof, the ablation that silver paste is produced in sintering process to the silicon substrate of laser open area is reduced.A kind of PERC cell pieces, including silicon substrate, covering forms the passivation layer on the silicon substrate back side, stacking is located at back of the body silver electrode and Al-BSF on the passivation layer, there are multiple back of the body silver electrode areas on the passivation layer, multiple laser openings are formed with by laser ablation interval on the region in addition to the back of the body silver electrode area of the passivation layer, passivation layer described in the laser opening insertion is to expose the silicon substrate, the back of the body silver electrode formation is in the back of the body silver electrode area, the part of the Al-BSF covers to be formed in the laser opening to form localized contact with the silicon substrate.
Description
Technical field
The invention belongs to solar battery sheet field, more particularly to a kind of PERC batteries and preparation method thereof.
Background technology
At present, in a variety of high performance solar batteries technologies, PERC batteries（Passivated-Emitter and
Rear Cell, i.e. passivation emitter back-contact cell）Because its technology and current industrial electrochemical cell production line have height simultaneous
Capacitive so that the cost of technological sourcing enterprise is substantially reduced, typically only needs to increase a small amount of on the basis of common batteries production line
Equipment, conversion efficiency just has lifting by a relatively large margin, therefore receives the favor of solar cell manufacturer.
PERC batteries just proposed that on this architecture basics, Australia New South Wales was big early in 1989 by Blakers et al.
Photovoltaic device laboratory obtains conversion efficiency up to 23.2% solar cell.The volume production of current monocrystalline silicon PERC batteries
Efficiency can reach more than 21%.PERC battery process is in addition to the front deposition passivating film of conventional batteries, and the back side also can
Dual layer passivation film deposition is carried out, SiN is utilizedxOr Al2O3In cell backside formation passivation layer, as back reflector, increase the long glistening light of waves
Absorption, while the electrical potential differences of P-N interpolars is maximized, reduction electronics is combined, so as to lift cell conversion efficiency.Thus, it is
Make to be covered in the aluminium paste in backside passivation film with silicon substrate formation localized contact, it is necessary to backside passivation film before metallization
The laser for carrying out special pattern opens film, and to remove local passivation layer, the mode of this partial points contact can reduce electrode and connect
Contacting surface product, reduction electrode are combined.
In current PERC battery production technologies, uniform laser opening first is carried out to the back side of PERC batteries, then in electricity
Silver paste is printed in the back of the body silver electrode area at the pond back side, aluminium paste is all printed on other regions in except back of the body silver electrode area, then burns
Knot forms back of the body silver electrode and the almost Al-BSF at the whole back side of covering battery.This technique can produce following defect：What it was used
It is mainly the figures such as point, line, the line segment of regular distribution that laser, which opens film pattern, and the laser opening of formation is distributed evenly in the battery back of the body
Face, in metallization（That is silk-screen printing）During, it is some to be located at back of the body silver electricity in addition to being intended to form the aluminium paste contacted with silicon substrate
Upper silver paste is inevitably covered in laser opening in polar region, silver paste can be to the silicon substrate in laser opening in sintering process
Body produces corrosion, increases complex centre, minority carrier life time is reduced, so as to influence battery efficiency.
The content of the invention
Present invention aim to address above-mentioned the deficiencies in the prior art and problem, it is proposed that a kind of PERC batteries and
Its preparation method, reduces the ablation that silver paste is produced in sintering process to the silicon substrate of laser open area.
The technical solution adopted by the present invention is as follows：
A kind of PERC cell pieces, including silicon substrate, covering form passivation layer on the silicon substrate back side, are located at the passivation
There are multiple back of the body silver electrode areas, the passivation layer removes the back of the body on back of the body silver electrode and Al-BSF on layer, the passivation layer
Multiple laser openings are formed with by laser ablation interval on region beyond silver electrode area, it is blunt described in the laser opening insertion
Change layer to expose the silicon substrate, the back of the body silver electrode formation is in the back of the body silver electrode area, the part covering of the Al-BSF
Formed in the laser opening to form localized contact with the silicon substrate.
Preferably, the Al-BSF, which includes covering in multiple secondary grid lines, only described laser opening, is formed with described secondary grid
Line.
It is highly preferred that the width of the secondary grid line is not less than the width of the laser opening.
It is highly preferred that the Al-BSF also includes multiple main gate lines for being used to connect each secondary grid line, the back of the body silver electrode is embedding
It is placed in the main gate line.
Further, the Al-BSF only includes the secondary grid line and the main gate line.
Preferably, the laser opening is evenly distributed on the area beyond the back of the body silver electrode area at the cell piece back side
On domain.
Preferably, the laser opening of part is shaped as continuous linear, and other laser openings are line
Section shape, in the back of the body silver electrode area having between adjacent two sections of the laser opening of line segment shape described in one.
Preferably, the laser opening is shaped as line, point or line segment.
What the present invention was used has a kind of technical scheme as follows：
A kind of preparation method of described PERC cell pieces, comprises the following steps：S1, on the passivation layer at the silicon substrate back side reserve
Multiple back of the body silver electrode areas, multiple laser openings, institute are opened up on the region in addition to back of the body silver electrode area by laser ablation interval
Passivation layer described in laser opening insertion is stated to exposing the silicon substrate；S2, in the silver-colored region printing silver paste of each back of the body, in each laser opening
Place's printing aluminium paste, sintering forms back of the body silver electrode and Al-BSF.
Preferably, in step S2, aluminium paste is printed at the position only intersected at each laser opening and with each secondary grid line, is burnt
Secondary grid line is formed respectively after knot and connects the main gate line of each secondary grid line.
The present invention uses above scheme, has the following advantages that compared with prior art：
Liao Bei silver electrodes area is overleaf reserved on passivation layer, laser opening is not carried out to the back of the body silver electrode area, only in back of the body silver electrode
Region beyond area carries out laser opening, and silver paste can be avoided to be coated over laser aperture position, so that possible corrosion is reduced,
The problem of silver paste produces burn into increase complex centre, reduction minority carrier life time to laser open area in sintering process is avoided,
Improve battery efficiency.
Brief description of the drawings
In order to illustrate more clearly of technical scheme, embodiment will be described below needed for the accompanying drawing to be used
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, general for this area
For logical technical staff, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Accompanying drawing 1 opens film design configuration for a kind of laser of the present invention；
Accompanying drawing 2 is a kind of schematic rear view of PERC cell pieces of the present invention.
In above-mentioned accompanying drawing,
2nd, passivation layer；20th, back of the body silver electrode area；21st, laser opening；3rd, silver electrode is carried on the back；4th, secondary grid line；5th, main gate line.
Embodiment
Presently preferred embodiments of the present invention is described in detail below in conjunction with the accompanying drawings, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.Herein it should be noted that the explanation for these embodiments is used to help
Understand the present invention, but do not constitute limitation of the invention.In addition, involved in each embodiment of invention described below
As long as and to technical characteristic do not constitute each other conflict can just be combined with each other.
A kind of backside laser for being used to prepare PERC cell pieces that accompanying drawing 1 show the present embodiment use opens film design drawing
Shape.Accompanying drawing 2 show a kind of schematic rear view of PERC batteries of the present embodiment.
Referring to the drawings shown in 2, a kind of PERC cell pieces of offer of the present embodiment, including silicon substrate, covering are formed in silicon substrate
Passivation layer 2 on the body back side, the back of the body silver electrode 3 and Al-BSF being located on passivation layer 2.Such as, passivation layer 2 includes covering being formed and existed
AlO on the silicon substrate back sidexPassivation layer, covering are formed in AlOxSiN on layerxPassivation layer.There are multiple back of the body silver on passivation layer 2
Electrode district 20, i.e. passivation layer 2 is divided into the laser ablation area beyond back of the body silver electrode area 20 and back of the body silver electrode area 20.Passivation layer 2
The region in addition to back of the body silver electrode area 20 on multiple laser openings 21 are formed with by laser ablation interval, laser opening 21 is passed through
Logical passivation layer 2 is to expose silicon substrate, and back of the body silver electrode 3 is formed in back of the body silver electrode area 20, and the part of Al-BSF, which covers to be formed, is swashing
In light opening 21 with silicon substrate formation localized contact.
Aluminium paste is printed at each laser opening 21, multiple secondary grid lines 4 of covering and filling laser opening 21 are formed after sintering.
These secondary grid lines 4 are one of parts of Al-BSF, it is preferable that Al-BSF includes multiple secondary grid lines 4, only in laser opening 21
Covering is formed with secondary grid line 4, and the width of secondary grid line 4 is not less than the width of laser opening 21.In addition, Al-BSF also includes multiple use
In the main gate line 5 for connecting each secondary grid line 4, back of the body silver electrode 3 is nested in main gate line 5.Al-BSF only includes secondary grid line 4 and main gate line
5。
Referring to the drawings shown in 1, laser opening 21 is evenly distributed on the area beyond the Chu Bei silver electrodes area 20 at the cell piece back side
On domain.The reserved back of the body silver paste printing zone of silver electrode 3 is without laser opening 21.So as to reduce silver paste in sintering process to opening
The ablation that region silicon substrate is produced.This backside laser opens the solar energy crystal silicon battery that film design configuration is applied to all specifications
Piece；This backside laser opens the figure that film design is applied to the various open-cellular forms such as point, line, line segment.
Preferably, the laser opening 21 of part is shaped as continuous linear, and other laser openings 21 are line segment shape,
In the back of the body silver electrode area 20 between adjacent two sections of the laser opening 21 of line segment shape with one.The shape of laser opening 21 can be
Line, point or line segment.
Major design principle is to be different from all standing of tradition back of the body electric field（Except back electrode region）Aluminium paste is designed, and is originally set
Meter is only remained（1）The secondary grid line 4 of laser opening 21 is covered, and（2）Nesting back of the body silver electrode simultaneously with secondary grid line 4 vertical crosses
Main gate line 5, remainder does not all cover aluminium paste.
This back surface field pair radical of grid line 4 opens the lines radical of film depending on laser, and laser beam drilling can be dotted-line form；
Secondary grid width depends on the width (being not less than the width of laser opening 21) of laser opening 21, need to ensure secondary grid during Al-BSF printing
Opening can be completely covered in line 4.The width of this back surface field main gate line 5 need to ensure can nested back of the body silver electrode 3, main gate line 5 will be with
All secondary grid lines 4 intersect.
The preparation method of above-mentioned PERC cell pieces, comprises the following steps：It is S1, pre- on the passivation layer 2 at the silicon substrate back side
Multiple back of the body silver electrode areas 20 are stayed, opening up multiple laser by laser ablation interval on the region in addition to back of the body silver electrode area 20 opens
Mouthfuls 21, the insertion passivation layer 2 of laser opening 21 is to exposing silicon substrate；S2, in the silver-colored region printing silver paste of each back of the body, in each laser opening 21
Place's printing aluminium paste, sintering forms back of the body silver electrode 3 and Al-BSF.In step S2, only at each laser opening 21 and with each secondary grid
Printed at the intersecting position of line 4 and form secondary grid line 4 and the main gate line 5 for connecting each secondary grid line 4 after aluminium paste, sintering respectively.In design
During laser opens film pattern, done according to the domain of back of the body silver electrode area 20 of printing screen plate and be not open setting, as long as in printing ring
Section confirms that half tone figure is opened film pattern matching with laser and is aligned, it is possible to avoid the back of the body silver paste of silver electrode 3 from being covered in laser opening 21
Position, so as to reduce possible corrosiveness.
In the prior art, conventional crystalline silicon battery directly contacts silicon base mode come blunt to back surface progress using full Al-BSF
Change, the preparation technology cost of battery is reduced to a certain extent.But with the thickness more and more thinner of silicon chip, the disadvantage of full Al-BSF
End gradually show, such as Al-BSF caused in sintering process silicon warp, alusil alloy layer to battery infrared band reflect energy
Power difference and Al-BSF contacts that to cause electrode to be combined heavier etc. with the broad-area electrode of silicon substrate, and these drawbacks govern conversion and imitated
The further lifting of rate.In addition, for Al-BSF, traditional handicraft is usually the full Al-BSF nested against one another with back of the body silver electrode 3.So
And in current PERC battery production technologies, cell piece semi-finished product are difficult to avoid to back side nanoscale during handling circulation
Passivating film cause damage, when Al-BSF is covered in damage field and after oversintering, electrode contact region also just corresponding increase,
Cause compound increase.Based on this, the Al-BSF for the PERC cell pieces that the present invention is provided has primary and secondary gratings, is ensureing to cover laser
On the basis of opening 21 and back of the body silver electrode 3 peripheral region are capped, the Al-BSF of remainder is eliminated.This design can pole
It is big to reduce the complex centre that aluminium paste covering passivating film damage place is brought, meanwhile, greatly reduce aluminium paste consumption（According to the design
Middle linear laser is opened in the case of film, it is possible to decrease unit consumption 60% or so）, also further alleviate after Al-BSF sintering due to thermal stress
The cell piece warpage issues brought.
Compared with prior art, the invention has the advantages that：
1st, laser opens film pattern and employs the reserved domain not perforate design of back of the body silver electrode area 20, reduces the ablation shadow of back electrode silver paste
Ring；
2nd, Al-BSF printing screen plate figure employs primary and secondary gratings design, in the case where ensureing localized contact, reduces aluminium paste pair
The corrosion of other passivating film damage locations, improves compound, improves electric current, improves conversion efficiency；
3rd, the primary and secondary gratings design of Al-BSF printing screen plate figure, greatly reduces the unit consumption of back electric field aluminum pulp, decreases simultaneously
The warpage that Al-BSF is caused in sintering process by thermal stress to battery.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and its purpose exists
It can understand present disclosure in person skilled in the art and implement according to this, the protection of the present invention can not be limited with this
Scope.Equivalent transformation or modification that all principles according to the present invention are made, should all be included within the scope of the present invention.
Claims (10)
1. a kind of PERC cell pieces, including silicon substrate, covering formed on the silicon substrate back side passivation layer, be located at it is described blunt
Change the back of the body silver electrode and Al-BSF on layer, it is characterised in that：There are multiple back of the body silver electrode areas, the passivation on the passivation layer
Multiple laser openings are formed with by laser ablation interval on the region in addition to the back of the body silver electrode area of floor, the laser is opened
Passivation layer described in mouth insertion is to expose the silicon substrate, and the back of the body silver electrode formation is in the back of the body silver electrode area, the aluminium back of the body
The part of field covers to be formed in the laser opening to form localized contact with the silicon substrate.
2. PERC cell pieces according to claim 1, it is characterised in that：The Al-BSF includes multiple secondary grid lines, only institute
State covering in laser opening and be formed with described secondary grid line.
3. PERC cell pieces according to claim 2, it is characterised in that：The width of the secondary grid line is not less than the laser
The width of opening.
4. PERC cell pieces according to claim 2, it is characterised in that：The Al-BSF also includes multiple each for connecting
The main gate line of secondary grid line, the back of the body silver electrode is nested in the main gate line.
5. PERC cell pieces according to claim 4, it is characterised in that：The Al-BSF only includes the secondary grid line and institute
State main gate line.
6. PERC cell pieces according to claim 1, it is characterised in that：The laser opening is evenly distributed on the battery
The piece back side goes out on the region beyond the back of the body silver electrode area.
7. PERC cell pieces according to claim 1, it is characterised in that：Being shaped as the partial laser opening is continuous
It is linear, other laser openings be line segment shape, between adjacent two sections of the laser opening of line segment shape have one
Described back of the body silver electrode area.
8. PERC cell pieces according to claim 1, it is characterised in that：The laser opening is shaped as line, point or line
Section.
9. the preparation method of a kind of PERC cell pieces as described in claim any one of 1-7, it is characterised in that including following step
Suddenly：S1, reserved multiple back of the body silver electrode areas on the passivation layer at the silicon substrate back side, pass through on the region in addition to back of the body silver electrode area
Laser ablation interval opens up multiple laser openings, and passivation layer described in the laser opening insertion is to exposing the silicon substrate；S2,
Each silver-colored region printing silver paste of the back of the body, prints aluminium paste, sintering forms back of the body silver electrode and Al-BSF at each laser opening.
10. the preparation method of PERC cell pieces according to claim 8, it is characterised in that：In step S2, only in each laser
Printed at the position intersected at opening and with each secondary grid line and form secondary grid line respectively after aluminium paste, sintering and connect each secondary grid line
Main gate line.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710181396.8A CN106952970A (en) | 2017-03-24 | 2017-03-24 | A kind of PERC batteries and preparation method thereof |
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| CN109300998A (en) * | 2018-09-29 | 2019-02-01 | 苏州腾晖光伏技术有限公司 | A kind of two-sided crystal silicon solar cell sheet |
| CN111276554A (en) * | 2020-04-09 | 2020-06-12 | 浙江爱旭太阳能科技有限公司 | P-type solar cell adopting back composite electrode |
| CN112736147A (en) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | Solar cell and method for producing the same |
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| CN108511536A (en) * | 2018-06-07 | 2018-09-07 | 通威太阳能（安徽）有限公司 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
| CN109300998A (en) * | 2018-09-29 | 2019-02-01 | 苏州腾晖光伏技术有限公司 | A kind of two-sided crystal silicon solar cell sheet |
| CN112736147A (en) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | Solar cell and method for producing the same |
| CN111276554A (en) * | 2020-04-09 | 2020-06-12 | 浙江爱旭太阳能科技有限公司 | P-type solar cell adopting back composite electrode |
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