CN103258929B - Led chip and preparation method thereof - Google Patents
Led chip and preparation method thereof Download PDFInfo
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- CN103258929B CN103258929B CN201310157090.0A CN201310157090A CN103258929B CN 103258929 B CN103258929 B CN 103258929B CN 201310157090 A CN201310157090 A CN 201310157090A CN 103258929 B CN103258929 B CN 103258929B
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Abstract
Present invention is disclosed a kind of LED chip and preparation method thereof, this LED chip comprises: first kind epitaxial loayer; Light emitting epitaxial layer is arranged at described first kind epitaxial loayer side; Second Type epitaxial loayer is arranged at described light emitting epitaxial layer and deviates from described first kind epitaxial loayer side, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, the surface that described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side has groove, and described groove at least runs through described Second Type contact layer; First electrode, described first kind epitaxial loayer electricity is connected; Second electrode, is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and cover described groove.The invention provides the preparation method of this LED chip simultaneously.LED chip provided by the present invention improves effective injection of electric current, decreases the absorption of Second Type epitaxial loayer to light, thus improves the luminous efficiency of chip.
Description
Technical field
The present invention relates to Light-Emitting Diode (LED) and manufacture field, particularly relate to a kind of LED chip and preparation method thereof.
Background technology
Since early 1990s gallium nitride based LED commercialization, the application of LED is rapidly expanded, and the market of expansion is continuous again proposes new technical requirement to LED, impels the structure of LED to more perfect, more ripe future development.Recent year LED enterprise, under the encouragement of government is helped, obtains again further development by Beijing Olympic Games, Shanghai World's Fair, the Guangzhou Asian Games, Shenzhen Games for university students and " ten ten thousand, cities " etc.
LED, as a kind of electroluminescent device, needs to make electrode on luminescent material surface, carrys out driving LED luminescence from electrode injection electric current.The photoelectric properties of size to LED of electrode have a great impact, and on the one hand electrode area is larger, and pulse current injectingt is easier, CURRENT DISTRIBUTION can accomplish evenly, operating voltage also can reduce, and this is conducive to electricity conversion; Electrode is light absorbent on the other hand, and the larger shading surface of its area is also larger, and this just causes the decline of electric light transformation efficiency.In the prior art, by manufacturing the way of current barrier layer on LED, this contradiction is solved.Specifically, immediately below distance electrode, the position making insulating material of certain depth stops the electric current in this block region to pass through, would not be luminous immediately below such electrode, so electrode does not in fact just have or seldom shading, thus improve the electric light transformation efficiency of LED.
Current barrier layer is while block current flow, and the epitaxial loayer below current barrier layer itself does not produce contribution to luminescence.Contrary, due to when preparing epitaxial loayer, the impurity magnesium (Mg) that can adulterate a large amount of, thus in the forbidden band of epitaxial loayer, introduce deep energy level impurities, i.e. so-called gold-tinted zoning, so, epitaxial loayer below current barrier layer also can absorb light, causes the light extraction efficiency of LED chip to reduce.
Therefore, the luminous efficiency how improving LED chip has become the problem that those skilled in the art need to solve.
Summary of the invention
The object of the invention is to, a kind of LED chip and preparation method thereof is provided, to solve the low problem of existing LED chip luminous efficiency.
For solving the problems of the technologies described above, the invention provides a kind of LED chip, comprising:
First kind epitaxial loayer;
Light emitting epitaxial layer, is arranged at described first kind epitaxial loayer side;
Second Type epitaxial loayer, be arranged at described light emitting epitaxial layer and deviate from described first kind epitaxial loayer side, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer, the surface that described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side has groove, and described groove at least runs through described Second Type contact layer;
First electrode, described first kind epitaxial loayer electricity is connected, and thinks that described first kind epitaxial loayer provides voltage;
Second electrode, is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and cover described groove.
Further, in described LED chip, described groove runs through described Second Type epitaxial loayer.
Further, in described LED chip, between described light emitting epitaxial layer and described Second Type epitaxial loayer, also has a undoped epitaxial layers.
Further, in described LED chip, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, and described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove.
Further, in described LED chip, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, and described transparency conducting layer is positioned at the surface of described groove and described light emitting epitaxial layer.
Further, in described LED chip, between described transparency conducting layer and described groove, also there is a current barrier layer.
Further, in described LED chip, described first electrode is positioned at described first kind epitaxial loayer to deviate from described light emitting epitaxial layer side or is positioned at described first kind epitaxial loayer towards described light emitting epitaxial layer side.
According to another side of the present invention, the present invention also provides a kind of preparation method of LED chip, comprising:
First kind epitaxial loayer is provided;
Light emitting epitaxial layer is prepared in described first kind epitaxial loayer side;
Deviate from described first kind epitaxial loayer side at described light emitting epitaxial layer and prepare Second Type epitaxial loayer, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, and described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer;
Second Type epitaxial loayer described in selective etch, form groove with the surface deviating from described light emitting epitaxial layer side at described Second Type epitaxial loayer, described groove at least runs through described Second Type contact layer;
Prepare the first electrode and the second electrode, described first electrode is connected with described first kind epitaxial loayer electricity, think that described first kind epitaxial loayer provides voltage, described second electrode is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and covers described groove.
Further, in the preparation method of described LED chip, described groove runs through described Second Type epitaxial loayer.
Further, in the preparation method of described LED chip, between described light emitting epitaxial layer and described Second Type epitaxial loayer, prepare a undoped epitaxial layers.
Further, in the preparation method of described LED chip, deviate from described light emitting epitaxial layer side at described Second Type epitaxial loayer and prepare a transparency conducting layer, described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove.
Further, in the preparation method of described LED chip, deviate from described light emitting epitaxial layer side at described Second Type epitaxial loayer and prepare a transparency conducting layer, described transparency conducting layer is positioned at the surface of described groove and described light emitting epitaxial layer.
Further, in the preparation method of described LED chip, between described transparency conducting layer and described groove, prepare a current barrier layer.
Further, in the preparation method of described LED chip, deviate from described light emitting epitaxial layer side or described first kind epitaxial loayer prepares described first electrode towards described light emitting epitaxial layer side at described first kind epitaxial loayer.
Compared with prior art, LED chip provided by the invention and preparation method thereof has the following advantages:
1. in LED chip of the present invention and preparation method thereof, the surface that the described Second Type epitaxial loayer of this kind of LED chip deviates from described light emitting epitaxial layer side has groove, described groove at least runs through described Second Type contact layer, described second electrode covers described groove, compared with prior art, described groove be arranged so that there is no described Second Type contact layer in the described Second Type epitaxial loayer of described second base part, thus add the contact resistance of described second electrode and described Second Type epitaxial loayer, block current flow is directly injected in the described Second Type epitaxial loayer of described second base part, thus improve effective injection of electric current, further, the described Second Type epitaxial layer portion being arranged so that described second base part of described groove or all eliminate, thus decrease the absorption of Second Type epitaxial loayer to the light that described light emitting epitaxial layer sends, therefore, improve the luminous efficiency of chip.
2. in LED chip of the present invention and preparation method thereof, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, described transparency conducting layer improves electrical efficiency, described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove, described second electrode is made directly to be prepared in the surface of described groove, and due to the resistance between described second electrode and the surface of described groove larger, so current barrier layer need not be arranged, save technique.
Accompanying drawing explanation
Fig. 1 is the flow chart of the LED chip preparation method of one embodiment of the invention;
Fig. 2 a-Fig. 2 f is the structural representation of the LED chip in each processing step of the LED chip preparation method of one embodiment of the invention;
Fig. 3 is the generalized section of the LED chip of further embodiment of this invention.
Embodiment
Below in conjunction with schematic diagram, LED chip of the present invention and preparation method thereof is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, the invention provides a kind of LED chip and preparation method thereof, the surface that the described Second Type epitaxial loayer of this LED chip deviates from described light emitting epitaxial layer side has groove, described groove at least runs through described Second Type contact layer, described second electrode covers described groove, described second electrode covers described groove, improve effective injection of electric current, and decrease the absorption of Second Type epitaxial loayer to the light that described light emitting epitaxial layer sends, therefore, the luminous efficiency of LED chip is improved.
In conjunction with above-mentioned core concept, the invention provides a kind of LED chip, comprising: first kind epitaxial loayer; Light emitting epitaxial layer, is arranged at described first kind epitaxial loayer side; Second Type epitaxial loayer, be arranged at described light emitting epitaxial layer and deviate from described first kind epitaxial loayer side, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer, the surface that described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side has groove, and described groove at least runs through described Second Type contact layer; First electrode, described first kind epitaxial loayer electricity is connected, and thinks that described first kind epitaxial loayer provides voltage; Second electrode, is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and cover described groove.
Further, in conjunction with above-mentioned LED chip, present invention also offers a kind of manufacture method of LED chip, comprise the following steps:
Step S11, provides first kind epitaxial loayer;
Step S12, prepares light emitting epitaxial layer in described first kind epitaxial loayer side;
Step S13, deviate from described first kind epitaxial loayer side at described light emitting epitaxial layer and prepare Second Type epitaxial loayer, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, and described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer;
Step S14, Second Type epitaxial loayer described in selective etch, form groove with the surface deviating from described light emitting epitaxial layer side at described Second Type epitaxial loayer, described groove at least runs through described Second Type contact layer;
Step S15, prepare the first electrode and the second electrode, described first electrode is connected with described first kind epitaxial loayer electricity, thinks that described first kind epitaxial loayer provides voltage, described second electrode is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and covers described groove.
Below in conjunction with core concept, describe LED chip of the present invention and preparation method thereof in detail.
[the first embodiment]
In the present embodiment, deviate from described light emitting epitaxial layer side at described Second Type epitaxial loayer and prepare a transparency conducting layer, described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove.
LED chip in the present embodiment and preparation method thereof is illustrated below in conjunction with Fig. 1 and Fig. 2 a-Fig. 2 f.Wherein, Fig. 1 is the flow chart of the LED chip preparation method of one embodiment of the invention, and Fig. 2 a-Fig. 2 f is the structural representation of the LED chip in each processing step of the LED chip preparation method of one embodiment of the invention.
First, carry out step S11, first kind epitaxial loayer 110 is provided.
In producing actually, LED chip also comprises substrate 100 as required, and described first kind epitaxial loayer 110 is formed at the side of described substrate 100, as shown in Figure 2 a.But the resilient coating improving lattice match can also be formed between described first kind epitaxial loayer 110 and described substrate 100, specifically not limit.Wherein, the material of described first kind epitaxial loayer 110 can be the semi-conducting material of the N-type such as n type gallium nitride, N-type aluminium nitride doping, specifically do not limit, the material of described substrate 100 can be sapphire, other material, if carborundum, magnesium oxide or zinc oxide are also within thought range of the present invention.In addition, the substrate 100 of the present embodiment is graphical sapphire substrate, because graphical sapphire substrate can reduce epitaxial film materials dislocation density, improves the crystal mass of epitaxial loayer.
Then, carry out step S12, light emitting epitaxial layer 120 is prepared in the side deviating from described substrate 100 at described first kind epitaxial loayer 110, as shown in Figure 2 b.General, described light emitting epitaxial layer 120 is quantum well layer, can be single quantum well or multiple quantum well layer, in the present embodiment, described first kind epitaxial loayer 110 be n type gallium nitride, so, described light emitting epitaxial layer 120 is the gallium nitride/InGaN Multiple Quantum Well in 3 ~ 5 cycles, but the material of described light emitting epitaxial layer 120 is not limited to gallium nitride/InGaN, as long as can form well layer and barrier layer, quantum well radiation can be realized, also within thought range of the present invention.
Due in the present embodiment, a undoped epitaxial layers 121 is also had between described light emitting epitaxial layer 120 and described Second Type epitaxial loayer 130, so between step S12 and step S13, deviate from described first kind epitaxial loayer 110 side at described light emitting epitaxial layer and prepare undoped epitaxial layers 121, in the present embodiment, the material of described undoped epitaxial layers 121 is non-impurity-doped gallium nitride.
Then, carry out step S13, deviate from described first kind epitaxial loayer side at described light emitting epitaxial layer and prepare Second Type epitaxial loayer 130, described Second Type epitaxial loayer 130 comprises Second Type coating 131 and Second Type contact layer 132, described Second Type coating 131 is arranged at the side towards described light emitting epitaxial layer 120, as shown in Figure 2 c.Due in the present embodiment, described light emitting epitaxial layer 120 is the gallium nitride/InGaN Multiple Quantum Well in 3 ~ 5 cycles, so the material of described Second Type coating 131 is P type gallium nitride, described Second Type contact layer 132 is P type InGaN, the lattice arrangement rule of P type InGaN, contribute to improving electrical property, but the material of described Second Type coating 131 and described Second Type contact layer 132 is not limited to as P type gallium nitride and P type InGaN, other can provide the P type uniconductor material in hole for described light emitting epitaxial layer 120, with within thought range of the present invention.
Due in the present embodiment, described Second Type epitaxial loayer 130 deviates from described light emitting epitaxial layer 120 side and also has a transparency conducting layer 140, so between step S13 and step S14, deviate from described light emitting epitaxial layer 120 side at described Second Type epitaxial loayer 130 and prepare described transparency conducting layer 140, generally, the material of described transparency conducting layer 140 is ITO (tin indium oxide).
In the present embodiment, described first electrode is arranged at described first kind epitaxial loayer 110 towards described light emitting epitaxial layer 120 side, so between step S13 and step S14, Second Type epitaxial loayer 130, described light emitting epitaxial layer 120 described in selective etch, with first kind epitaxial loayer 110 described in exposed portion, as shown in Figure 2 d, the described first kind epitaxial loayer 110 of exposed portion prepares described first electrode.
Subsequently, carry out step S14, Second Type epitaxial loayer 130 described in selective etch, form groove 150 with the surface deviating from described light emitting epitaxial layer 120 side at described Second Type epitaxial loayer, described groove 150 at least runs through described Second Type contact layer 132.Described groove 150 be arranged so that the described Second Type epitaxial loayer 130 of described second base part is partly or entirely eliminated, thus decrease the absorption of Second Type epitaxial loayer 130 to the light that described light emitting epitaxial layer 120 sends, therefore, the luminous efficiency of LED chip is improved.Preferably, described groove 150 runs through described Second Type epitaxial loayer 130, the described Second Type epitaxial loayer 130 of described second base part can be made all to eliminate, decrease the absorption of Second Type epitaxial loayer 130 to the light that described light emitting epitaxial layer 120 sends more.But be not limited to described groove 150 and run through described Second Type epitaxial loayer 130, described groove 150 only can run through described Second Type contact layer 132, or be also positioned at the described Second Type coating 131 of part, also within thought range of the present invention.In the present embodiment, owing to having prepared described transparency conducting layer 140 before carrying out step S14, so described transparency conducting layer 140 is positioned at the surface of the described light emitting epitaxial layer 130 beyond described groove 150, as shown in Figure 2 e.First can also carry out step S14, then prepare described transparency conducting layer 140, afterwards the described transparency conducting layer 140 in described groove 150 be removed, the surface of described light emitting epitaxial layer 130 beyond described groove 150 can also form described transparency conducting layer 140.
Finally, carry out step S15, prepare the first electrode 160 and the second electrode 170, described first electrode 160 is arranged at described first kind epitaxial loayer 110 towards described light emitting epitaxial layer 120 side and is connected with described first kind epitaxial loayer 110, think that described first kind epitaxial loayer 110 provides voltage, described second electrode 170 is arranged at described Second Type epitaxial loayer 130 and deviates from described light emitting epitaxial layer 130 side, and covers described groove 150, as shown in figure 2f.In the production process of reality, the cross-sectional area of described second electrode 170 is slightly larger than the cross-sectional area of described groove 150, and generally, larger than the cross-sectional area of described groove 150 1 micron ~ 20 microns of the cross-sectional area of described second electrode 170, as 5 microns, 10 microns.Due to the setting of described groove 150, make there is no described Second Type contact layer 132 in the described Second Type epitaxial loayer 130 below described second electrode 170, thus add the contact resistance of described second electrode 170 and described Second Type epitaxial loayer 130, block current flow is directly injected in the described Second Type epitaxial loayer 130 below described second electrode 170, thus improve effective injection of electric current, improve the luminous efficiency of LED chip.
In sum, the invention provides a kind of LED chip and preparation method thereof, wherein the structure of LED chip as shown in figure 2f, comprise first kind epitaxial loayer 110, light emitting epitaxial layer 120, Second Type epitaxial loayer 130, first electrode 160 and the second electrode 170, described light emitting epitaxial layer 120 is arranged at described first kind epitaxial loayer 110 side, described Second Type epitaxial loayer 130 is arranged at described light emitting epitaxial layer 120 and deviates from described first kind epitaxial loayer 110 side, described Second Type epitaxial loayer 130 comprises Second Type coating 131 and Second Type contact layer 132, described Second Type coating 131 is arranged at the side towards described light emitting epitaxial layer 120, the surface that described Second Type epitaxial loayer 130 deviates from described light emitting epitaxial layer 120 side has groove 150, described groove to 150 runs through described Second Type contact layer 132 less, described first electrode 160 is arranged at described first kind epitaxial loayer 110 towards described light emitting epitaxial layer 120 side and is connected with described first kind epitaxial loayer 110, think that described first kind epitaxial loayer 110 provides voltage, described second electrode is arranged at described Second Type epitaxial loayer 130 and deviates from described light emitting epitaxial layer 120 side, and cover described groove 150.In addition, described first electrode 160 is not limited to be arranged at described first kind epitaxial loayer 110 towards described light emitting epitaxial layer 120 side and is connected with described first kind epitaxial loayer 110, described first electrode 160 can also be arranged at the side that described first kind epitaxial loayer 110 deviates from described light emitting epitaxial layer 120, and be connected with described first kind epitaxial loayer 110, also voltage can be provided, also within thought range of the present invention for described first kind epitaxial loayer 110.
[the second embodiment]
Refer to Fig. 3, Fig. 3 is the generalized section of the LED chip of further embodiment of this invention.The LED chip of described another execution mode is substantially identical with the LED chip of a described execution mode, its difference is: described transparency conducting layer 140 is positioned at the surface of described groove 150 and described light emitting epitaxial layer 130, effective injection of electric current can also be improve, and decrease the absorption of Second Type epitaxial loayer 130 to the light that described light emitting epitaxial layer 120 sends, also can reach the beneficial effect of the luminous efficiency improving LED chip.
Preferably, a current barrier layer 180 is prepared between described transparency conducting layer 140 and described groove 150, in the described Second Type epitaxial loayer 130 that described current barrier layer 180 can stop electric current to be directly injected into below described second electrode 170 effectively, thus improve effective injection of electric current further, to improve the luminous efficiency of LED chip further.
To sum up, LED chip of the present invention and preparation method thereof, the surface that the described Second Type epitaxial loayer of this LED chip deviates from described light emitting epitaxial layer side has groove, described groove at least runs through described Second Type contact layer, and described second electrode covers described groove, and described second electrode covers described groove, improve effective injection of electric current, and decrease the absorption of Second Type epitaxial loayer to the light that described light emitting epitaxial layer sends, therefore, improve the luminous efficiency of LED chip.Compared with prior art, LED chip provided by the invention and preparation method thereof has the following advantages:
1. in LED chip of the present invention and preparation method thereof, the surface that the described Second Type epitaxial loayer of this kind of LED chip deviates from described light emitting epitaxial layer side has groove, described groove at least runs through described Second Type contact layer, described second electrode covers described groove, compared with prior art, described groove be arranged so that there is no described Second Type contact layer in the described Second Type epitaxial loayer of described second base part, thus add the contact resistance of described second electrode and described Second Type epitaxial loayer, block current flow is directly injected in the described Second Type epitaxial loayer of described second base part, thus improve effective injection of electric current, further, the described Second Type epitaxial layer portion being arranged so that described second base part of described groove or all eliminate, thus decrease the absorption of Second Type epitaxial loayer to the light that described light emitting epitaxial layer sends, therefore, improve the luminous efficiency of chip.
2. in LED chip of the present invention and preparation method thereof, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, described transparency conducting layer improves electrical efficiency, described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove, described second electrode is made directly to be prepared in the surface of described groove, and due to the resistance between described second electrode and the surface of described groove larger, so current barrier layer need not be arranged, save technique.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (12)
1. a LED chip, comprising:
First kind epitaxial loayer;
Light emitting epitaxial layer, is arranged at the side of described first kind epitaxial loayer;
Second Type epitaxial loayer, be arranged at described light emitting epitaxial layer and deviate from described first kind epitaxial loayer side, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer, the surface that described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side has groove, described groove at least runs through described Second Type contact layer, is through to the lower surface of described Second Type coating at the most;
First electrode, is connected, for providing voltage to described first kind epitaxial loayer with described first kind epitaxial loayer electricity;
Second electrode, is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and cover described groove.
2. LED chip as claimed in claim 1, is characterized in that, also comprise a undoped epitaxial layers and be arranged between described light emitting epitaxial layer and described Second Type epitaxial loayer.
3. the LED chip as described in claim 1 or 2, is characterized in that, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, and described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove.
4. LED chip as claimed in claim 1 or 2, it is characterized in that, described Second Type epitaxial loayer deviates from described light emitting epitaxial layer side and also has a transparency conducting layer, and described transparency conducting layer is positioned at the surface of described groove and described light emitting epitaxial layer.
5. LED chip as claimed in claim 4, is characterized in that also having a current barrier layer between described transparency conducting layer and described groove.
6. LED chip as claimed in claim 1, it is characterized in that, described first electrode is positioned at described first kind epitaxial loayer to deviate from described light emitting epitaxial layer side or is positioned at described first kind epitaxial loayer towards described light emitting epitaxial layer side.
7. a preparation method for LED chip, comprising:
First kind epitaxial loayer is provided;
Light emitting epitaxial layer is prepared in described first kind epitaxial loayer side;
Deviate from described first kind epitaxial loayer side at described light emitting epitaxial layer and prepare Second Type epitaxial loayer, described Second Type epitaxial loayer comprises Second Type coating and Second Type contact layer, described Second Type coating is arranged at the side towards described light emitting epitaxial layer, and described Second Type contact layer is arranged at the side deviating from described light emitting epitaxial layer;
Second Type epitaxial loayer described in selective etch, groove is formed with the surface deviating from described light emitting epitaxial layer side at described Second Type epitaxial loayer, described groove at least runs through described Second Type contact layer, is through to the lower surface of described Second Type coating at the most;
Prepare the first electrode and the second electrode, described first electrode is connected with described first kind epitaxial loayer electricity, think that described first kind epitaxial loayer provides voltage, described second electrode is arranged at described Second Type epitaxial loayer and deviates from described light emitting epitaxial layer side, and covers described groove.
8. the preparation method of LED chip as claimed in claim 7, is characterized in that, between described light emitting epitaxial layer and described Second Type epitaxial loayer, prepare a undoped epitaxial layers.
9. the preparation method of LED chip as claimed in claim 7 or 8, it is characterized in that, deviate from described light emitting epitaxial layer side at described Second Type epitaxial loayer and prepare a transparency conducting layer, described transparency conducting layer is positioned at the surface of the described light emitting epitaxial layer beyond described groove.
10. the preparation method of LED chip as claimed in claim 7 or 8, it is characterized in that, deviate from described light emitting epitaxial layer side at described Second Type epitaxial loayer and prepare a transparency conducting layer, described transparency conducting layer is positioned at the surface of described groove and described light emitting epitaxial layer.
The preparation method of 11. LED chips as claimed in claim 10, is characterized in that, prepare a current barrier layer between described transparency conducting layer and described groove.
The preparation method of 12. LED chips as claimed in claim 7, is characterized in that, deviates from described light emitting epitaxial layer side or described first kind epitaxial loayer prepares described first electrode towards described light emitting epitaxial layer side at described first kind epitaxial loayer.
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| CN103258929A (en) | 2013-08-21 |
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