CN103367559A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN103367559A CN103367559A CN2012100883087A CN201210088308A CN103367559A CN 103367559 A CN103367559 A CN 103367559A CN 2012100883087 A CN2012100883087 A CN 2012100883087A CN 201210088308 A CN201210088308 A CN 201210088308A CN 103367559 A CN103367559 A CN 103367559A
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Abstract
The invention provides a light emitting diode and a manufacturing method thereof. A layer of pattern conductive film is manufactured on a light-emitting epitaxy structure comprising an N-GaN layer, a quantum well layer and a P-GaN layer, the pattern conductive film is provided with holes arranged according to a preset pattern and non-ohmic contact is formed by the pattern conductive film and the P-GaN layer, then a transparent conductive layer is manufactured on the pattern conductive film such that ohmic contact is formed by the transparent conductive layer and the P-GaN layer through the holes, and electrode preparation and other subsequent processing are carried out to complete the manufacture of the light emitting diode. Since the non-ohmic contact is formed by the pattern conductive film and the P-GaN layer and the pattern conductive film is only used as an extension layer of the current, the current density in an LED chip is uniform, the luminous efficiency of the LED can be raised, and the recession phenomenon of the LED is effectively inhibited. The light emitting diode and the manufacturing method have the advantages of simple manufacturing process step and significant effect and are suitable for the industrial production.
Description
Technical field
The invention belongs to semiconductor applications, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Semiconductor lighting is as new and effective solid light source, have the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, to become the again leap after incandescent lamp, fluorescent lamp on the human illumination history, its application enlarges rapidly, just driving the upgrading of the industries such as traditional lighting, demonstration, its economic benefit and social benefit are huge.Just because of this, semiconductor lighting is generally regarded as one of new industry of tool development prospect of 21 century, also is one of most important commanding elevation of the optoelectronic areas coming years.Light-emitting diode is by the III-IV compounds of group, makes such as semiconductors such as GaAs (GaAs), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide), and its core is PN junction.Therefore it has the I-N characteristic of general P-N knot, i.e. forward conduction, oppositely cut-off, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects the P district by the N district, and the N district is injected by the P district in the hole.Minority carrier (few son) part that enters the other side zone is compound and luminous with majority carrier (many sons).
The life-span of LED and luminous efficiency problem are the focuses of studying at present.The decay of LED spectrum is the major reason that causes the LED lost of life, thereby the decay of LED spectrum can obviously have influence on the performance of LED product.The reason that causes the decline of spectrum has several aspects, and aspect is because the increase of the inner junction temperature of the LED that high impressed current stress causes, and the increase of light-emitting zone non-radiative recombination center causes the decline of spectrum; Second aspect is because the too much heat of P-N knot causes the result of fluorescent material transformation efficiency reduction, thereby causes the decline of LED spectrum.
Existing LED all directly is made in transparency conducting layer on the P-GaN layer, and make it form ohmic contact, yet, such structure makes the current density at the LED light-emitting zone that larger difference be arranged owing to contact is inhomogeneous easily, because inner some the regional junction temperature of the LED that inhomogeneous impressed current stress causes is too high, the increase of light-emitting zone non-radiative recombination center causes the decline of LED spectrum easily, and because current density is inhomogeneous, also affected the raising of LED luminous efficiency.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of light-emitting diode and manufacture method thereof, be used for solving prior art and cause the LED luminous efficiency to reduce owing to current density is inhomogeneous, and cause easily the problem that the LED decay produces.
Reach for achieving the above object other relevant purposes, the invention provides a kind of manufacture method of light-emitting diode, comprise at least step:
1) provides semi-conductive substrate, and form the epitaxial light emission structure that comprises at least N-GaN layer, quantum well layer and P-GaN layer in described Semiconductor substrate;
2) make the figure conductive film that has by the hole of default pattern arrangement at described P-GaN layer, and make described figure conductive film and described P-GaN layer form non-ohmic contact;
3) make transparency conducting layer at described figure conductive film and hole, and make described transparency conducting layer form ohmic contact by described hole and described P-GaN layer;
4) make P electrode and N electrode to finish the manufacturing of described light-emitting diode.
As a kind of possibility of the manufacture method of light-emitting diode of the present invention, the material of described figure conductive film is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.
Preferably, described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.
In the manufacture method of light-emitting diode of the present invention, it is the visible light of 400～600nm that described figure conductive film can see through wave-length coverage.
As a kind of possibility of the manufacture method of light-emitting diode of the present invention, the hole of described default pattern arrangement is the hole by rectangular array.
As a kind of possibility of the manufacture method of light-emitting diode of the present invention, the hole of described default pattern arrangement is the holes with many row's longitudinal arrangements, and two adjacent round hole dislocations are arranged.
Preferably, described hole is shaped as circle, ellipse, rectangle, polygon or fillet polygon.
In the described step 2 of the manufacture method of light-emitting diode of the present invention) in, deposit layer of conductive film at described P-GaN layer first, then prepare litho pattern and described conductive film is carried out etching, to form described figure conductive film.
In the described step 4 of the manufacture method of light-emitting diode of the present invention) in, the described transparency conducting layer of etching, figure conductive film, P-GaN layer and quantum well layer are to obtain an exposed N-GaN platform, then at described N-GaN platform preparation N electrode, then at described transparency conducting layer preparation P electrode.
In the manufacture method of light-emitting diode of the present invention, described Semiconductor substrate is Sapphire Substrate or sapphire pattern substrate.
The present invention also provides a kind of light-emitting diode, comprises at least:
Epitaxial light emission structure comprises the N-GaN layer, is incorporated into the quantum well layer of described N-GaN layer and is incorporated into the P-GaN layer of described quantum well layer that wherein, described N-GaN layer and P-GaN layer are ledge structure, have the N electrode on the described N-GaN layer;
The figure conductive film is incorporated into described P-GaN layer and has hole by default pattern arrangement, wherein, and described figure conductive film and described P-GaN layer formation non-ohmic contact;
Transparency conducting layer is incorporated into described figure conductive film and described hole, and forms ohmic contact by described hole and described P-GaN layer, wherein, has the P electrode on the described transparency conducting layer.
In light-emitting diode of the present invention, the material of described figure conductive film is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.
Preferably, described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.
In light-emitting diode of the present invention, it is the visible light of 400～600nm that described figure conductive film can see through wave-length coverage.
In light-emitting diode of the present invention, the hole of described default pattern arrangement is the hole by rectangular array.
In light-emitting diode of the present invention, the hole of described default pattern arrangement is the hole with many row's longitudinal arrangements, and two adjacent round hole dislocations are arranged.
In light-emitting diode of the present invention, described hole be shaped as circle, ellipse, rectangle, polygon or fillet polygon.
As mentioned above, light-emitting diode of the present invention and manufacture method thereof, have following beneficial effect: the present invention has by the hole of presetting pattern arrangement by making one deck at the epitaxial light emission structure that comprises the P-GaN layer that N-GaN layer, quantum well layer reach, and the figure conductive film with described P-GaN layer formation non-ohmic contact, then make transparency conducting layer at described figure conductive film, make described transparency conducting layer form ohmic contact by described hole and described P-GaN layer, then prepare the subsequent technique such as electrode to finish the manufacturing of described light-emitting diode.Because described figure conductive film and described P-GaN layer form non-ohmic contact, only as the extension layer of electric current, make current density uniform-flow mistake in led chip, can improve the luminous efficiency of LED, and the decay of establishment LED.Manufacturing technology steps of the present invention is simple, and effect is remarkable, is applicable to industrial production.
Description of drawings
Fig. 1～Fig. 2 is shown as the manufacture method step 1 of light-emitting diode of the present invention) structural representation that presents.
Fig. 3～Fig. 4 c is shown as the manufacture method step 2 of light-emitting diode of the present invention) cross section and the planar structure schematic diagram that present.
Fig. 5 is shown as the manufacture method step 3 of light-emitting diode of the present invention) structural representation that presents.
Fig. 6 a～Fig. 6 c is shown as the manufacture method step 4 of light-emitting diode of the present invention) cross section and the planar structure schematic diagram that present.
The element numbers explanation
101 Semiconductor substrate
102 N-GaN layers
103 quantum well layers
104 P-GaN layers
105 conductive films
106 figure conductive films
107 holes
108 transparency conducting layers
109 N electrodes
110 P electrodes
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 1 to Fig. 6 c.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
Embodiment 1
Shown in Fig. 1 to Fig. 6 c, the invention provides a kind of manufacture method of light-emitting diode, comprise at least step:
See also Fig. 1～Fig. 2, as shown in the figure, at first carry out step 1), Semiconductor substrate 101 is provided, and forms the epitaxial light emission structure that comprises at least N-GaN layer 102, quantum well layer 103 and P-GaN layer 104 in described Semiconductor substrate 101.
In the present embodiment, provide semi-conductive substrate 101, this Semiconductor substrate 101 adopts Sapphire Substrate or sapphire pattern substrate, and certainly, in other embodiments, this Semiconductor substrate 101 also can be silicon substrate, silicon carbide substrates etc.Then with (CH
3)
3Ga (trimethyl gallium) is Ga (gallium) source, NH
3Be N source, SiH
4(silane) is used as the N-type dopant, adopts the metallo-organic compound CVD (Chemical Vapor Deposition) method at described Grown on Sapphire Substrates N-GaN layer 102; With (CH
3)
3In (trimethyl indium) is In (indium) source, (CH
3)
3Ga is the Ga source, NH
3Be the N source, adopt metallo-organic compound CVD (Chemical Vapor Deposition) method growing InGaN/GaN quantum well layer 103 on described N-GaN layer 102; (CH
3)
3Ga is the Ga source, NH
3Be the N source, Mg (C
5H
5)
2(two luxuriant magnesium) adopts the metallo-organic compound CVD (Chemical Vapor Deposition) method at described InGaN/GaN quantum well layer 103 growth P-GaN layers 104, to form described epitaxial light emission structure as P type dopant.Certainly, growth pattern can adopt common two-dimensional growth method or unsettled growth method, can select how different growth patterns as required.
Shown in Fig. 3～4c, then carry out step 2), make the figure conductive film 106 that has by the hole 107 of default pattern arrangement at described P-GaN layer 104, and make described figure conductive film 106 and described P-GaN layer 104 form non-ohmic contact.
In the present embodiment, adopt the method for deposition to form layer of conductive film 105 at described P-GaN layer 104 first, then prepare litho pattern and described conductive film 105 is carried out etching, to form described figure conductive film 106.Certainly, in other embodiments, also can press required graphic making photoresist at described P-GaN layer 104 first, and then deposit described conductive film 105, prepare described figure conductive film 106 by the method that lifts off (lift-off) again.
It is the visible light of 400～600nm that described figure conductive film 106 can see through wave-length coverage.The material of described figure conductive film 106 is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.Wherein, described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.In the present embodiment, the material of described figure conductive film 106 is SiO
2With the composite material of ITO, in another embodiment, the material of described figure conductive film 106 is the composite material of N-GaN and ITO, certainly, in other embodiments, can be the composite material of other combination.
In the present embodiment, the hole 107 of described default pattern arrangement is by the hole 107 of rectangular array or is the holes 107 with many row's longitudinal arrangements, and adjacent two round holes, 107 dislocations are arranged.Certainly, in other embodiments, also can be radial arrangement, the arrangement mode of the arrangement of S shape or other expection.Described hole 107 be shaped as circle, ellipse, rectangle, polygon or fillet polygon.Certainly, in other embodiments, the shape of described hole 107 may be all shapes that need such as triangle, trapezoidal, rhombus.Because described figure conductive film 106 forms non-ohmic contact with described P-GaN layer 104, an extension layer as electric current, thereby can make current density uniform-flow mistake in led chip, can improve the luminous efficiency of LED, and the decay of establishment LED.
As shown in Figure 5, then carry out step 3), make transparency conducting layer 108 at described figure conductive film 106 and hole 107, and make described transparency conducting layer 108 form ohmic contact by described hole 107 and described P-GaN layer 104.
In the present embodiment, mode by deposition or coating is made transparency conducting layers 108 at described figure conductive film 106 and hole 107, then makes described transparency conducting layer 108 form ohmic contact by described hole 107 and described P-GaN layer 104 by annealing process.
The material of described transparency conducting layer 108 is ITO, ATO, FTO or AZO.In the present embodiment, the material of described transparency conducting layer 108 is ITO, and certainly, in other embodiments, the material of described transparency conducting layer 108 also can be the transparent conductive material of ATO or other expection.
See also Fig. 6 a～Fig. 6 c, as shown in the figure, carry out step 4 at last), make P electrode 110 and N electrode 109 to finish the manufacturing of described light-emitting diode.
In the present embodiment, make first litho pattern, then according to the described transparency conducting layer 108 of litho pattern etching, figure conductive film 106, P-GaN layer 104 and quantum well layer 103 to obtain an exposed N-GaN platform, then at described N-GaN platform preparation N electrode 109, prepare P electrodes 110 to finish the manufacturing of described light-emitting diode at described transparency conducting layer 108 at last.Certainly, in other embodiments, also can adopt the manufacture craft of other electrode to prepare described P, N electrode 109 and 110.
Embodiment 2
See also Fig. 6 a～Fig. 6 c, as shown in the figure, the present invention also provides a kind of light-emitting diode, comprises at least:
Epitaxial light emission structure, comprise N-GaN layer 102, be incorporated into the quantum well layer 103 of described N-GaN layer 102 and be incorporated into the P-GaN layer 104 of described quantum well layer 103, wherein, described N-GaN layer 102 is ledge structure with P-GaN layer 104, has N electrode 109 on the described N-GaN layer 102.The position of electrode can be decided according to the demand of reality, does not enumerate one by one all situations at this.
Described light-emitting diode also comprises figure conductive film 106, is incorporated into described P-GaN layer 104 and has hole 107 by default pattern arrangement, and wherein, described figure conductive film 106 forms non-ohmic contacts with described P-GaN layer 104.Wherein, the hole 107 of described default pattern arrangement is by the hole 107 of rectangular array or is the holes 107 with many row's longitudinal arrangements, and adjacent two round holes, 107 dislocations are arranged.Certainly, in other embodiments, also can be radial arrangement, the arrangement mode of the arrangement of S shape or other expection.Described hole 107 be shaped as circle, ellipse, rectangle, polygon or fillet polygon.Certainly, in other embodiments, the shape of described hole 107 may be all shapes that need such as triangle, trapezoidal, rhombus.Because described figure conductive film 106 forms non-ohmic contact with described P-GaN layer 104, an extension layer as electric current, thereby can make current density uniform-flow mistake in led chip, can improve the luminous efficiency of LED, and the decay of establishment LED.
It is the visible light of 400～600nm that described figure conductive film 106 can see through wave-length coverage.The material of described figure conductive film 106 is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.Wherein, described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.In the present embodiment, the material of described figure conductive film 106 is SiO
2With the composite material of ITO, in another embodiment, the material of described figure conductive film 106 is the composite material of N-GaN and ITO, certainly, in other embodiments, can be the composite material of other combination.
Described light-emitting diode also comprises transparency conducting layer 108, is incorporated into described figure conductive film 106 and described hole 107, and forms ohmic contact by described hole 107 and described P-GaN layer 104, wherein, has P electrode 110 on the described transparency conducting layer 108.The material of described transparency conducting layer 108 is ITO, ATO, FTO or AZO.In the present embodiment, the material of described transparency conducting layer 108 is ITO, and certainly, in other embodiments, the material of described transparency conducting layer 108 also can be the transparent conductive material of ATO or other expection.
In sum, light-emitting diode of the present invention and manufacture method thereof, have by the hole of presetting pattern arrangement by making one deck at the epitaxial light emission structure that comprises the P-GaN layer that N-GaN layer, quantum well layer reach, and the figure conductive film with described P-GaN layer formation non-ohmic contact, then make transparency conducting layer at described figure conductive film, make described transparency conducting layer form ohmic contact by described hole and described P-GaN layer, then prepare the subsequent technique such as electrode to finish the manufacturing of described light-emitting diode.Because described figure conductive film and described P-GaN layer form non-ohmic contact, only as the extension layer of electric current, make current density uniform-flow mistake in led chip, can improve the luminous efficiency of LED, and the decay of establishment LED.Manufacturing technology steps of the present invention is simple, and effect is remarkable, is applicable to industrial production.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (17)
1. the manufacture method of a light-emitting diode is characterized in that, comprises at least step:
1) provides semi-conductive substrate, and form the epitaxial light emission structure that comprises at least N-GaN layer, quantum well layer and P-GaN layer in described Semiconductor substrate;
2) make the figure conductive film that has by the hole of default pattern arrangement at described P-GaN layer, and make described figure conductive film and described P-GaN layer form non-ohmic contact;
3) make transparency conducting layer at described figure conductive film and hole, and make described transparency conducting layer form ohmic contact by described hole and described P-GaN layer;
4) make P electrode and N electrode to finish the manufacturing of described light-emitting diode.
2. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: the material of described figure conductive film is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.
3. the manufacture method of light-emitting diode according to claim 2, it is characterized in that: described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.
4. the manufacture method of light-emitting diode according to claim 1 is characterized in that: it be the visible light of 400～600nm that described figure conductive film can see through wave-length coverage.
5. the manufacture method of the described light-emitting diode of any one according to claim 1～4 is characterized in that: the hole of described default pattern arrangement is the hole by rectangular array.
6. the manufacture method of the described light-emitting diode of any one according to claim 1～4 is characterized in that: the hole of described default pattern arrangement is the holes with many row's longitudinal arrangements, and two adjacent round hole dislocations are arranged.
7. the manufacture method of the described light-emitting diode of any one according to claim 1～4 is characterized in that: described hole be shaped as circle, ellipse, rectangle, polygon or fillet polygon.
8. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: described step 2), first deposit layer of conductive film at described P-GaN layer, then prepare litho pattern and described conductive film is carried out etching, to form described figure conductive film.
9. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: described step 4), the described transparency conducting layer of etching, figure conductive film, P-GaN layer and quantum well layer are to obtain an exposed N-GaN platform, then at described N-GaN platform preparation N electrode, then at described transparency conducting layer preparation P electrode.
10. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: described Semiconductor substrate is Sapphire Substrate or sapphire pattern substrate.
11. a light-emitting diode is characterized in that, comprises at least:
Epitaxial light emission structure comprises the N-GaN layer, is incorporated into the quantum well layer of described N-GaN layer and is incorporated into the P-GaN layer of described quantum well layer that wherein, described N-GaN layer and P-GaN layer are ledge structure, have the N electrode on the described N-GaN layer;
The figure conductive film is incorporated into described P-GaN layer and has hole by default pattern arrangement, wherein, and described figure conductive film and described P-GaN layer formation non-ohmic contact;
Transparency conducting layer is incorporated into described figure conductive film and described hole, and forms ohmic contact by described hole and described P-GaN layer, wherein, has the P electrode on the described transparency conducting layer.
12. light-emitting diode according to claim 11 is characterized in that: the material of described figure conductive film is N-GaN, u-GaN or insulating material and the formed composite material of transparent conductive material.
13. light-emitting diode according to claim 12 is characterized in that: described insulating material is SiO
2Or Si
3N
4, described transparent conductive material is ITO, ATO, FTO or AZO.
14. light-emitting diode according to claim 11 is characterized in that: it is the visible light of 400～600nm that described figure conductive film can see through wave-length coverage.
15. the described light-emitting diode of any one according to claim 11～14 is characterized in that: the hole of described default pattern arrangement is the hole by rectangular array.
16. the described light-emitting diode of any one according to claim 11～14 is characterized in that: the hole of described default pattern arrangement is the holes with many row's longitudinal arrangements, and two adjacent round hole dislocations are arranged.
17. the described light-emitting diode of any one according to claim 11～14 is characterized in that: described hole be shaped as circle, ellipse, rectangle, polygon or fillet polygon.
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| CN2012100883087A CN103367559A (en) | 2012-03-29 | 2012-03-29 | Light emitting diode and manufacturing method thereof |
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| CN105655462A (en) * | 2015-12-31 | 2016-06-08 | 上海交通大学 | High-voltage direct-current GaN-based light emitting diode and preparation method thereof |
| CN108878615A (en) * | 2018-07-27 | 2018-11-23 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
| CN109859882A (en) * | 2018-12-29 | 2019-06-07 | 南京大学 | A kind of flexible and transparent conductive metal film and preparation method thereof |
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Application publication date: 20131023 |