CN103258581A - Plasma irradiation platform - Google Patents
Plasma irradiation platform Download PDFInfo
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- CN103258581A CN103258581A CN2013101561865A CN201310156186A CN103258581A CN 103258581 A CN103258581 A CN 103258581A CN 2013101561865 A CN2013101561865 A CN 2013101561865A CN 201310156186 A CN201310156186 A CN 201310156186A CN 103258581 A CN103258581 A CN 103258581A
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Abstract
The invention relates to a plasma irradiation platform, and belongs to the technical field of application of plasma. The plasma irradiation platform comprises an ion source, a cavity and a laser heating system, wherein the ion source is sealed inside the cavity, and the laser heating system is arranged outside the cavity. The ion source comprises a quartz tube, a copper tube and a shielding cover, wherein the copper tube is wound on the outer wall of the quartz tube, the shielding cover is used for shielding a radio frequency electric field, and the quartz tube and the copper tube wound on the outer wall of the quartz tube are arranged inside the shielding cover. An air inlet is arranged at the upper end of the quartz tube, an ion spraying port is arranged at the lower end of the quartz tube, two ends of the copper tube are connected with two ends of a radio frequency power supply outside the cavity, a through hole is formed at the bottom of the shielding cover, a sample platform arranged inside the cavity is located under the ion source, and a quartz window arranged under the sample platform is in seal connection with the cavity. The laser heating system comprises a combination type laser which is fixed under the quartz window. The plasma irradiation platform has the advantages of being simple in equipment, low in cost, short in experimental period, and high in experimental efficiency.
Description
Technical field
The present invention relates to a kind of plasma radiation platform, belong to plasma applicating technology field.
Background technology
In recent decades, along with quick development of human society, demand to the energy is also increasing day by day, yet the utilizable energy source is fewer and feweri, the realization of controlled nuclear fusion becomes the research focus of the world today, and controlled nuclear fusion has two hang-ups: steady-state plasma problem and reactor critical material problem.At present there are a plurality of research groups carrying out the research work of this respect in the world, yet to low-temperature plasma n-body simulation n irradiation fusion reactor first wall material, and rare research of aspect such as first wall material radiation damage mechanism.This class can realize that the device of simulating fusion reactor irradiation also compares rarely at home and abroad, and the purposes of device and the means of building also have nothing in common with each other.
Use real fusion facility to carry out the research of irradiation experiment and material damage since the cycle long, the pause finishing that every startup once needs 5 years just can be tested again, the device starting fund is huge, open and once need up to ten million fund costs, reacted product has radiativity, the mankind also do not have disposal route preferably for fusion products at present, can only be buried reacted waste material, and need the decay radiation through more than one hundred million years just can disappear.This for the mankind experimentize research very unfavorable.So need the method for using plasma irradiation to simulate fusion reaction, realize the research of fusionable material micromechanism of damage.Up to now, the research that utilizes infrabar low-temperature plasma n-body simulation n irradiation fusionable material rare report still.Utilize the infrabar lower temperature plasma technology to carry out irradiation research and have important application.This irradiance method cost is low, and equipment is simple, and the cycle is short, and "dead" product generates, and experiment simultaneously is flexible, and it is more convenient quick to get up.
Summary of the invention
The objective of the invention is based on nuclear fusion device in the deficiency aspect the experimental study, a kind of experiment porch that produces cold plasma under low air pressure condition is provided, and the application process aspect material irradiation, this platform structure is simple, easy to usely flexibly can carry out irradiation and material behind the irradiation is annealed different fusionable materials, can handle various fusionable materials by changing the platform condition, semiconductor material and other materials implement more convenient quick.
The invention provides a kind of plasma radiation platform, described plasma radiation platform comprises ion gun, cavity and LASER HEATING system, described ion gun is sealed in the cavity, described LASER HEATING system is outside cavity, described ion gun comprises quartz ampoule, be wrapped in the copper pipe on the quartz ampoule outer wall and be used for the radome of shielded radio frequency electric field, described quartz ampoule and the copper pipe that is wrapped on the quartz ampoule outer wall place in the radome, described quartz ampoule upper end is provided with the air intake opening that is communicated with cavity outward, the quartz ampoule lower end is provided with the ion injection orifice, described copper pipe two ends are connected with the radio-frequency power supply two ends outside cavity, described radome bottom is provided with for the through hole by plasma, be provided with the sample platform in the described cavity, the sample platform is positioned under the ion gun, be provided with quartz window under the sample platform, described quartz window and cavity are tightly connected, and described LASER HEATING system comprises combined laser, and combined laser is fixed under the quartz window.
Radio-frequency power supply power peak range of adjustment of the present invention is 0~600W, and the feedback power range of adjustment is 0~200W.
Air intake opening of the present invention is preferably the flowmeter that is provided with for the control gas flow, and an end and the air intake opening of described flowmeter are tightly connected, and the other end is connected with discharge gas, and flowmeter is controlled by flow instrument.
Be preferably the thermocouple vacuum gauge that is provided with for gaging pressure in the quartz ampoule of the present invention, the thermocouple vacuum gauge range is 0.1~1000Pa.
Cavity of the present invention is preferably the pumped vacuum systems that is provided with for the manufacture of the chamber vacuum environment, described pumped vacuum systems comprises Digital Gauge Control, mechanical pump, molecular pump and gas filling valve, Digital Gauge Control and cavity are tightly connected for measuring the chamber vacuum degree, and its measurement range is 10~10
-5Pa, mechanical pump are used for using when cavity vacuumizes, and open molecular pump when cavity air pressure is lower than 200Pa and vacuumize.
Cavity of the present invention is preferably the temperature measurer that is provided with for measuring sample temperature, described temperature measurer comprises infrared thermometer and thermocouple temperature measurer, the infrared thermometer measurement range is 300~2000 ℃, infrared thermometer is used for measuring sample temperature, and the thermocouple temperature measurer is used for the calibration infrared thermometer and measures annealing temperature.
Combined laser of the present invention is preferably by several laser instruments and is coupled.
Sample platform of the present invention is preferably and is provided with the becket that contacts with sample, described becket loads negative bias, described cavity loads positive bias, forms electric field between described ion gun and the described sample, and described electric field can make plasma accelerate irradiation at sample surfaces.
LASER HEATING of the present invention system is preferably and comprises combined laser and collimating mirror, and described collimating mirror is connected with combined laser by optical fiber, and collimating mirror is fixed under the quartz window.
Plasma radiation platform using method of the present invention is opened pumped vacuum systems, when vacuum tightness reaches 10 for sample is placed the sample platform
-3During Pa, feed working gas from air intake opening, described working gas is at least a in hydrogen, helium and the argon gas, and working gas is full of quartz ampoule and cavity, open combined laser sample is heated to design temperature, regulate radio-frequency power supply power, when radio-frequency power supply power adds to corresponding gas ionization value, produce gaseous plasma, open grid bias power supply, transfer to the output voltage values that experiment needs, positive ion is introduced to sample surfaces under the biased effect outside, begins to carry out irradiation.
Beneficial effect of the present invention is:
1. plasma radiation platform, equipment is simple, have with low cost, experimental period is short, the high advantage of conventional efficient;
2. can select different radiation parameters according to the different irradiation requirements of material;
3. simple to operate, need not a large amount of manpower and materials, 2~3 people can operate;
4. unharmful substance produces in the experimentation.
Description of drawings
Accompanying drawing 2 width of cloth of the present invention,
Fig. 1 is plasma radiation platform structure synoptic diagram;
Wherein, 1, ion gun, 11, quartz ampoule, 111, air intake opening, 112, ion injection orifice, 12, copper pipe, 13, radome,, 131, through hole, 2, cavity, 21, sample platform, 22, quartz window, 3, the LASER HEATING system, 31, combined laser, 32, collimating mirror.
Fig. 2 is the afm image after utilizing the irradiation platform to silit irradiation.
Embodiment
Following non-limiting example can make those of ordinary skill in the art more fully understand the present invention, but does not limit the present invention in any way.
Embodiment 1
A kind of plasma radiation platform;
Described plasma radiation platform comprises ion gun 1, cavity 2 and LASER HEATING system 3, described ion gun 1 is sealed in the cavity 2, described LASER HEATING system 3 is outside cavity 2, described ion gun 1 comprises quartz ampoule 11, be wrapped in the copper pipe 12 on the quartz ampoule outer wall and be used for the radome 13 of shielded radio frequency electric field, described quartz ampoule 11 and the copper pipe 12 that is wrapped on the quartz ampoule outer wall place in the radome 13, described quartz ampoule 11 upper ends are provided with the air intake opening 111 that is communicated with cavity outward, described air intake opening 111 is provided with the volumetric displacement meter for the control gas flow, quartz ampoule 11 lower ends are provided with ion injection orifice 112, be provided with the thermocouple vacuum gauge for gaging pressure in the described quartz ampoule 11, described copper pipe 12 two ends are connected with the radio-frequency power supply two ends outside cavity 2, described radome 3 bottoms are provided with for the through hole 131 by plasma, be provided with sample platform 21 in the described cavity 2, described sample platform 21 is provided with the becket that contacts with sample, described becket loads negative bias, described cavity 2 loads positive bias, form electric field between described ion gun 1 and the described sample, sample platform 21 is positioned under the ion gun 1, be provided with quartz window 22 under the sample platform 21, described quartz window 22 is tightly connected with cavity 2, described cavity 2 is provided with the pumped vacuum systems for the manufacture of the chamber vacuum environment, be provided with in addition for the temperature measurer of measuring sample temperature, described LASER HEATING system 3 comprises combined laser 31 and collimating mirror 32, described combined laser 31 is coupled by 20 laser instruments, described collimating mirror 32 is connected with combined laser 31 by optical fiber, and collimating mirror 32 is fixed under the quartz window 22.
Application examples 1
The plasma radiation experiment of carbofrax material
Adopt embodiment 1 described plasma radiation platform, regulating the radio-frequency power supply power peak is 300W, feedback power is 0W, feeding volumetric flow rate from air intake opening is the helium of 40sccm, producing length at the ion injection orifice is the plasma of 50mm, open pumped vacuum systems, make the interior vacuum tightness of cavity reach 2.6 * 10
-2Pa opens the LASER HEATING system and makes sample temperature reach 600 ℃, opens grid bias power supply, is introduced to the silicon carbide sample surface under the positive ion biased effect outside, begins to carry out irradiation, and irradiation dose is respectively 1 * 10
15Ion/cm
2, 3 * 10
15Ion/cm
2, 1 * 10
16Ion/cm
2, 3 * 10
16Ion/cm
2, 1 * 10
17Ion/cm
2Silicon carbide sample behind the irradiation obtains the surface topography image with atomic force microscope, under the effect of extra electric field, the helium ion that gas ionization produces, accelerate to sample surfaces, because intermolecular diffusion motion, the helium ion can be seen through sample interior, and the helium ion will form projection in the continuous gathering of sample interior, sees Fig. 2.
No waste gas produces after the exoelectrical reaction.The gas molecule collision frequency is starkly lower than atmospheric pressure under low air pressure condition, can guarantee that like this there is the sufficiently long time in ion.But the helium ion that ionized gas produces and electronics in air with the just cancellation of its gas molecule collision.Its net result is: generate oxygen, and stable compounds such as water, environmentally safe, more "dead" material produces.
Claims (8)
1. plasma radiation platform, it is characterized in that: described plasma radiation platform comprises ion gun (1), cavity (2) and LASER HEATING system (3), described ion gun (1) is sealed in the cavity (2), described LASER HEATING system (3) is outside cavity (2), described ion gun (1) comprises quartz ampoule (11), be wrapped in the copper pipe (12) on the quartz ampoule outer wall and be used for the radome (13) of shielded radio frequency electric field, described quartz ampoule (11) and the copper pipe (12) that is wrapped on the quartz ampoule outer wall place in the radome (13), described quartz ampoule (11) upper end is provided with the air intake opening (111) that is communicated with cavity outward, quartz ampoule (11) lower end is provided with ion injection orifice (112), described copper pipe (12) two ends are connected with the radio-frequency power supply two ends outside cavity (2), described radome (3) bottom is provided with for the through hole (131) by plasma, be provided with sample platform (21) in the described cavity (2), sample platform (21) is positioned under the ion gun (1), be provided with quartz window (22) under the sample platform (21), described quartz window (22) is tightly connected with cavity (2), described LASER HEATING system (3) comprises combined laser (31), and combined laser (31) is fixed under the quartz window (22).
2. method according to claim 1 is characterized in that: described air intake opening (111) is provided with the flowmeter for the control gas flow.
3. method according to claim 1 is characterized in that: be provided with the thermocouple vacuum gauge for gaging pressure in the described quartz ampoule (11).
4. method according to claim 1, it is characterized in that: described cavity (2) is provided with the pumped vacuum systems for the manufacture of the chamber vacuum environment.
5. method according to claim 1 is characterized in that: described cavity (2) is provided with for the temperature measurer of measuring sample temperature.
6. method according to claim 1, it is characterized in that: described combined laser (31) is coupled by several laser instruments.
7. method according to claim 1, it is characterized in that: described sample platform (21) is provided with the becket that contacts with sample, described becket loads negative bias, and described cavity (2) loads positive bias, forms electric field between described ion gun (1) and the described sample.
8. method according to claim 1, it is characterized in that: described LASER HEATING system (3) comprises combined laser (31) and collimating mirror (32), described collimating mirror (32) is connected with combined laser (31) by optical fiber, and collimating mirror (32) is fixed under the quartz window (22).
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CN2013101561865A CN103258581A (en) | 2013-04-28 | 2013-04-28 | Plasma irradiation platform |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103926260A (en) * | 2014-03-31 | 2014-07-16 | 北京工业大学 | ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) device for ion irradiation experiment |
CN104157321A (en) * | 2014-08-04 | 2014-11-19 | 大连民族学院 | Low energy big flow and strong irradiation device for materials |
WO2018094982A1 (en) * | 2016-11-23 | 2018-05-31 | 大连民族大学 | Method for inducing and exciting radio frequency plasma with laser in low air pressure environment |
CN108844567A (en) * | 2018-04-19 | 2018-11-20 | 大连民族大学 | A kind of full tungsten is towards plasma sample stage |
CN112625900A (en) * | 2020-12-17 | 2021-04-09 | 西安电子科技大学 | Electromagnetic radiation cell experimental device with inclined waveguide resonant cavity |
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JP2004347473A (en) * | 2003-05-22 | 2004-12-09 | Tdk Corp | Quantitative analytical method using la-icp-ms, and manufacturing method of organic substance-containing molding |
CN1901774A (en) * | 2005-07-20 | 2007-01-24 | 三星Sdi株式会社 | Inductively coupled plasma processing apparatus |
US20090073586A1 (en) * | 2007-09-14 | 2009-03-19 | Fry Robert C | Analytical laser ablation of solid samples for ICP, ICP-MS, and FAG-MS analysis |
CN102503177A (en) * | 2011-10-21 | 2012-06-20 | 苏州大学 | Plasma processing device used for super-smooth surface |
CN102573258A (en) * | 2010-12-15 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductive coupling plasma device |
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Patent Citations (6)
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CN1426090A (en) * | 2001-12-14 | 2003-06-25 | 三星电子株式会社 | Inductive coupling type plasma device |
JP2004347473A (en) * | 2003-05-22 | 2004-12-09 | Tdk Corp | Quantitative analytical method using la-icp-ms, and manufacturing method of organic substance-containing molding |
CN1901774A (en) * | 2005-07-20 | 2007-01-24 | 三星Sdi株式会社 | Inductively coupled plasma processing apparatus |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103926260A (en) * | 2014-03-31 | 2014-07-16 | 北京工业大学 | ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) device for ion irradiation experiment |
CN104157321A (en) * | 2014-08-04 | 2014-11-19 | 大连民族学院 | Low energy big flow and strong irradiation device for materials |
CN104157321B (en) * | 2014-08-04 | 2017-02-15 | 大连民族学院 | Low energy big flow and strong irradiation device for materials |
WO2018094982A1 (en) * | 2016-11-23 | 2018-05-31 | 大连民族大学 | Method for inducing and exciting radio frequency plasma with laser in low air pressure environment |
CN108844567A (en) * | 2018-04-19 | 2018-11-20 | 大连民族大学 | A kind of full tungsten is towards plasma sample stage |
CN112625900A (en) * | 2020-12-17 | 2021-04-09 | 西安电子科技大学 | Electromagnetic radiation cell experimental device with inclined waveguide resonant cavity |
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Application publication date: 20130821 |