CN102653880A - Casting device - Google Patents
Casting device Download PDFInfo
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- CN102653880A CN102653880A CN2012101187196A CN201210118719A CN102653880A CN 102653880 A CN102653880 A CN 102653880A CN 2012101187196 A CN2012101187196 A CN 2012101187196A CN 201210118719 A CN201210118719 A CN 201210118719A CN 102653880 A CN102653880 A CN 102653880A
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- crucible
- casting device
- plate
- protective plate
- graphite protective
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Abstract
The invention discloses a casting device which comprises a crucible and a graphite protective plate, wherein the graphite protective plate is arranged at the top part and outer side of the crucible; the casting device comprises a molybdenum plate isolating layer; and the molybdenum plate is arranged between the crucible and the graphite protective plate. By adding the molybdenum plate isolating layer between the crucible and the graphite protective plate, the carbon steam generated from the graphite protective plate at a high temperature is reduced from entering the silicon crystal in the crucible; the reaction of the crucible and the graphite protective plate at the high temperature is prevented; and the impurity in a polycrystal pipeline is prevented from entering the silicon material during argon backwash. As the further improvement of the casting device, the molybdenum plate is 0.5mm-5mm in thickness; the appearance of the molybdenum plate is the same as that of the graphite protective plate; and the molybdenum plate and the graphite protective plate are connected integrally, and the casting device is simple and convenient in practical operation.
Description
Technical field
The invention belongs to the solar energy polycrystalline silicon casting technology field, relate in particular to a kind of method that reduces carbon content in the casting polycrystalline silicon.
Background technology
All the time, the energy is the human focus of paying close attention to the most all the time, traditional energy such as oil, and Sweet natural gas, Nonrenewable resources such as colliery constantly consume, and reserves sharply descend, and simultaneously, the use of traditional energy has also also produced negative influence to global environment.
Solar electrical energy generation has been come into people's life gradually as a kind of new forms of energy mode.As the base mateiral silicon wafer of solar cell, the photoelectric transformation efficiency of its material directly influences the generated output of this solar cell, how to improve the efficiency of conversion of sun silicon wafer, and reducing optical attenuation is each photovoltaic producer problem demanding prompt solution.Carbon is a kind of main impurity in the casting polycrystalline silicon, and its basic properties (comprising segregation coefficient, solid solubility, spread coefficient, measurement etc.) is identical with pulling of silicon single crystal.But, because the equipment thermal field of casting polycrystalline silicon is huge and complicated, in crystal casting or directional freeze process; There is a large amount of carbon evaporations in graphite under well heater high temperature, can pollute crystalline silicon, so; Carbon content in the casting polycrystalline silicon is higher, has had a strong impact on the quality of polysilicon chip.
Summary of the invention
To above-mentioned technical problem, the present invention provides the casting device of carbon content in a kind of effective reduction casting polycrystalline silicon.
The present invention is achieved through following technical scheme, and a kind of casting device comprises crucible and the graphite backplate that is positioned at the said crucible top and the outside, and said casting device comprises the molybdenum plate sealing coat, and said molybdenum plate is between crucible and graphite backplate.
The present invention reduces the carbon vapor that the graphite backplate produces under the high temperature and gets in the silicon crystal in the crucible through between crucible and graphite backplate, adding the molybdenum plate sealing coat; The reaction of crucible and graphite backplate under the prevention condition of high temperature; Stop the entering of the impurity in polycrystalline pipeline silicon material when backwashing argon gas.
As the further improvement of casting device of the present invention, said molybdenum plate thickness is 0.5mm-5mm, profile consistent with graphite backplate profile and both connect as one, simple and convenient when actually operating.
Description of drawings
Accompanying drawing is the molybdenum plate insulation layer structure synoptic diagram of casting device of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is made and to further specify.
According to position of mounting hole on the molybdenum plate top board 1, the processing mounting holes in graphite top board corresponding position, and remove the powdered graphite that remains in graphite top board surface when punching; With the graphite bolt molybdenum plate is fixed on the graphite top board; Using the same method wraps up lateral graphite backplate around the crucible with molybdenum plate side plate 2, before shove charge, with non-dust cloth wiping molybdenum plate surface; Remove the dust that is glued, the quartz crucible that silicon material, graphite backplate and molybdenum plate sealing coat are housed is dropped in the polycrystalline furnace.
Silicon material in the said crucible exceeds not touch molybdenum plate, can prevent that like this molybdenum plate is not damaged by silicon material institute corrode under the high temperature.The thickness of molybdenum plate is good with 0.5mm-5mm.
The description of above embodiment is comparatively concrete, detailed; But can not therefore be interpreted as restriction to scope; Should be pointed out that for the person of ordinary skill of the art, under the prerequisite that does not break away from the present invention's design; Can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (3)
1. a casting device comprises crucible and the graphite backplate that is positioned at the said crucible top and the outside, and it is characterized in that: said casting device comprises the molybdenum plate sealing coat, and said molybdenum plate sealing coat is between crucible and graphite backplate.
2. casting device according to claim 1 is characterized in that: said molybdenum plate thickness is 0.5mm--5mm, profile consistent with graphite backplate profile and both connect as one.
3. casting device according to claim 2 is characterized in that: said molybdenum plate adopts bolt to be connected with the graphite backplate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101187196A CN102653880A (en) | 2012-04-20 | 2012-04-20 | Casting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101187196A CN102653880A (en) | 2012-04-20 | 2012-04-20 | Casting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102653880A true CN102653880A (en) | 2012-09-05 |
Family
ID=46729607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101187196A Pending CN102653880A (en) | 2012-04-20 | 2012-04-20 | Casting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102653880A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995104A (en) * | 2012-12-04 | 2013-03-27 | 江苏协鑫硅材料科技发展有限公司 | Method and device for casting polycrystalline silicon or mono-like silicon |
| CN103255469A (en) * | 2013-06-03 | 2013-08-21 | 英利能源（中国）有限公司 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11116389A (en) * | 1997-10-13 | 1999-04-27 | Ibiden Co Ltd | Apparatus for pulling single crystal |
| CN101812729A (en) * | 2010-04-28 | 2010-08-25 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot with low carbon content and preparation method |
| CN101857970A (en) * | 2010-04-16 | 2010-10-13 | 镇江市丹徒区黄墟润蓝晶体制造厂 | Growing method of large-size flaky sapphire crystals |
| CN202039153U (en) * | 2011-04-06 | 2011-11-16 | 天津市环欧半导体材料技术有限公司 | Thermal system used for manufacture of heavily doped silicon single crystal |
| CN102409405A (en) * | 2011-08-23 | 2012-04-11 | 周浪 | Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof |
| CN202913085U (en) * | 2012-04-20 | 2013-05-01 | 镇江环太硅科技有限公司 | Casting device |
-
2012
- 2012-04-20 CN CN2012101187196A patent/CN102653880A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11116389A (en) * | 1997-10-13 | 1999-04-27 | Ibiden Co Ltd | Apparatus for pulling single crystal |
| CN101857970A (en) * | 2010-04-16 | 2010-10-13 | 镇江市丹徒区黄墟润蓝晶体制造厂 | Growing method of large-size flaky sapphire crystals |
| CN101812729A (en) * | 2010-04-28 | 2010-08-25 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingot with low carbon content and preparation method |
| CN202039153U (en) * | 2011-04-06 | 2011-11-16 | 天津市环欧半导体材料技术有限公司 | Thermal system used for manufacture of heavily doped silicon single crystal |
| CN102409405A (en) * | 2011-08-23 | 2012-04-11 | 周浪 | Carbon contamination-preventing coating of carbon material for polysilicon ingot furnace and preparation process thereof |
| CN202913085U (en) * | 2012-04-20 | 2013-05-01 | 镇江环太硅科技有限公司 | Casting device |
Non-Patent Citations (1)
| Title |
|---|
| F. SCHMID, ET AL.: "Origin of SiC Impurities in Silicon Crystals Grown from the Melt in Vacuum", 《J. ELECTROCHEM. SOC.: ELECTROCHEMICAL SCIENCE AND TECHNOLOGY》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995104A (en) * | 2012-12-04 | 2013-03-27 | 江苏协鑫硅材料科技发展有限公司 | Method and device for casting polycrystalline silicon or mono-like silicon |
| CN102995104B (en) * | 2012-12-04 | 2016-01-20 | 江苏协鑫硅材料科技发展有限公司 | A kind of method of casting polycrystalline silicon or quasi-monocrystalline silicon and device |
| CN103255469A (en) * | 2013-06-03 | 2013-08-21 | 英利能源（中国）有限公司 | Graphite heater, graphite electrode and method for reducing carbon content in silicon wafer |
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Application publication date: 20120905 |