CN103248220B - A kind ofly realize the charge pump being converted to twice negative voltage by positive voltage - Google Patents
A kind ofly realize the charge pump being converted to twice negative voltage by positive voltage Download PDFInfo
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- CN103248220B CN103248220B CN201310169322.4A CN201310169322A CN103248220B CN 103248220 B CN103248220 B CN 103248220B CN 201310169322 A CN201310169322 A CN 201310169322A CN 103248220 B CN103248220 B CN 103248220B
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Abstract
The invention provides a kind of charge pump realizing being converted to by positive voltage twice negative voltage, this charge pump comprises signal input circuit, for the negative circuit of the input signal phasing back by described signal input circuit, for positive voltage being converted to the voltage conversion circuit of twice negative voltage, for controlling switching circuit and the output circuit of the charging and discharging of capacitor in described voltage conversion circuit; The output of described signal input circuit is connected with switching circuit by negative circuit, and the output of described switching circuit connects voltage conversion circuit and output circuit successively.The electric elements quantity that charge pump circuit of the present invention adopts makes the circuit that can simplify charge pump less, thus realizes the output being converted to twice negative voltage by positive voltage, can avoid the power supply chip using price higher, reduce the production cost of charge pump.The electric power system that this charge pump is particularly suitable for 3.3V and 5V uses, and meets and to power to amplifier and to provide bias voltage to the backlight of liquid crystal.
Description
Technical field
The present invention relates to technical field of electronic communication, more particularly, relate to a kind of charge pump.
Background technology
In electronic communication, a lot of control circuit all needs to use positive and negative duplicate supply, particularly in electronic product, often needs positive-negative power or several different power voltage supply.Concerning battery powered portable product, increase volume and weight that number of batteries must affect product, adopt voltage reversal formula circuit then can save a Battery pack in portable product.
General negative supply also can be used for providing bias voltage to the backlight of amplifier or liquid crystal, and these occasions need enough low voltage and export, and its electric current exported is all very little, usually only has several milliamperes to ten milliamperes.And the method that tradition produces negative supply can produce negative supply by DC/DC power supply chip, but these chips generally all need inductance, are unfavorable for the miniaturization of circuit volume and the simplification of circuit; Also have certain methods to adopt IC that inductance can be replaced to produce negative voltage, but the price of these IC is relatively high, causes the raising of production cost.
Also there is the simplification circuit that can produce negative supply present stage, and as shown in Figure 1, this circuit is converted to negative voltage by positive voltage, but this circuit output voltage is only transfer negative voltage to by positive voltage, does not realize the rising of output voltage amplitude.Therefore this circuit is for the electric power system of 3.3V and 5V, and the supply voltage that this output voltage provides to amplifier is too low, is not more suitable for and provides bias voltage to the backlight of liquid crystal.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art with not enough, a kind of charge pump realizing being converted to by positive voltage twice negative voltage is provided, this charge pump does not need inductance element and required electric elements quantity is few, then can simplify the circuit of charge pump and reduce production cost, make circuit volume miniaturized and be applicable to portable use product, the electric power system that this charge pump is particularly suitable for 3.3V and 5V uses.
In order to achieve the above object, the present invention is achieved by following technical proposals: a kind ofly realize the charge pump being converted to twice negative voltage by positive voltage, it is characterized in that: comprising:
Signal input circuit;
For the negative circuit of the input signal phasing back by described signal input circuit;
For positive voltage being converted to the voltage conversion circuit of twice negative voltage;
For controlling the switching circuit of the charging and discharging of capacitor in described voltage conversion circuit;
And output circuit;
The output of described signal input circuit is connected with switching circuit by negative circuit, and the output of described switching circuit connects voltage conversion circuit and output circuit successively.
In such scheme, the first storing energy of the electric capacity of charge pump, then by the Co ntrolled release energy of switching circuit to obtain required output voltage.The electric elements quantity that charge pump of the present invention adopts makes the circuit that can simplify charge pump less, thus realizes the output being converted to twice negative voltage by positive voltage, reduces the production cost of charge pump; Meanwhile, output current can reach 10 milliamperes, meets and to power to amplifier and to provide bias voltage to the backlight of liquid crystal.
Described voltage conversion circuit is connected to form by electric capacity and PIN diode.
More particularly, described voltage conversion circuit is connected to form by electric capacity and PIN diode and refers to electric capacity one, PIN diode two is connected successively with electric capacity two, is connected with PIN diode one between electric capacity one and PIN diode two; Described electric capacity two is connected with output circuit by PIN diode three with between PIN diode two; Described electric capacity one other end is connected to the junction of signal input circuit and negative circuit.
Described switching circuit is connected to form by N-type MOS transistor and N-type MOS transistor; The grid of described N-type MOS transistor is all connected with the output of negative circuit with the grid of N-type MOS transistor; The described drain electrode of N-type MOS transistor is all connected with voltage conversion circuit with the drain electrode of N-type MOS transistor; The substrate of described N-type MOS transistor is connected with power supply with source electrode; The substrate of described N-type MOS transistor is connected with voltage conversion circuit with source electrode.
The drain electrode of described N-type MOS transistor and the drain electrode of N-type MOS transistor are all connected drain electrode and the N-type MOS transistor referring to N-type MOS transistor drain electrode with voltage conversion circuit is all connected with one end of the electric capacity two of voltage conversion circuit; The substrate of described N-type MOS transistor and source electrode are connected the substrate that refers to N-type MOS transistor with voltage conversion circuit and source electrode is connected between the electric capacity one of voltage conversion circuit and PIN diode two.
The inverter that described negative circuit is made up of logic chip and peripheral circuit connect to form, or negative circuit is connected to form by PNP triode and peripheral circuit.
Described negative circuit is connected to form by PNP type triode and peripheral circuit and refers to that the base stage of PNP type triode is connected with the parallel connected end of resistance one with resistance two, and emitter is connected with power supply, and collector electrode is by series resistance three ground connection.
Described signal input circuit is the circuit being produced square-wave signal by this schmitt trigger, or signal input circuit is the circuit being produced pwm signal by microcontroller.
The described output circuit be connected with voltage conversion circuit is output rectification circuit.
The first storing energy of the electric capacity of charge pump of the present invention, then by the Co ntrolled release energy of switching circuit to obtain required output voltage.The operation principle of charge pump of the present invention: charge pump of the present invention is made up of signal input circuit, negative circuit, voltage conversion circuit, switching circuit and output circuit.If diode forward conducting step-down is V
f, the amplitude of input square wave is V
cc.
(1) pulse exported when signal input circuit is positive half period, and the positive voltage of input charges to electric capacity one C1 in voltage conversion circuit, and the first storing energy of C1, the voltage at its two ends is V
c1=V
cc-V
f; Simultaneously, the N-type MOS transistor Q2 conducting of positive half period pulse after negative circuit is anti-phase in control switch circuit that signal input circuit exports, N-type MOS transistor Q1 closes, electric capacity two C2, PIN diode two D2 then in N-type MOS transistor Q2 and voltage conversion circuit and PIN diode one D1 loop conducting, then electric capacity two C2 charges, and the voltage at its two ends is V
c2=V
cc-2V
f; Now, the voltage V of A point between electric capacity one C1 and PIN diode two D2
afor V
f, the voltage V of B point between N-type MOS transistor Q2 and electric capacity two C2
bfor V
cc.
(2) pulse exported when signal input circuit is negative half-cycle, and electric capacity one C1 both end voltage can not be suddenlyd change and discharge, then the voltage V of A point between electric capacity one C1 and PIN diode two D2
afor-(V
cc-V
f).The N-type MOS transistor Q1 conducting of negative half-cycle pulse after negative circuit is anti-phase in control switch circuit that signal input circuit exports, N-type MOS transistor Q2 closes, now the voltage V of B point between N-type MOS transistor Q2 and electric capacity two C2
b=V
a=-(V
cc-V
f); Electric capacity two C2 both end voltage can not be suddenlyd change and discharge, then C point voltage V between electric capacity two C2 and PIN diode three D3
c=V
b-V
c2=-2V
cc+ 3V
f.The output voltage of last output rectification circuit is V
0=V
c-V
f=-2 (V
cc-V
f), i.e. V
0=-2V
c1.
Compared with prior art, tool of the present invention has the following advantages and beneficial effect:
1, the electric elements quantity that charge pump circuit of the present invention adopts makes the circuit that can simplify charge pump less, thus realizes the output being converted to twice negative voltage by positive voltage, can avoid the power supply chip using price higher, reduce the production cost of charge pump.
2, the electric power system that charge pump of the present invention is particularly suitable for 3.3V and 5V uses, and meets and to power to amplifier and to provide bias voltage to the backlight of liquid crystal.
3, charge pump circuit volume of the present invention is miniaturized and be applicable to portable use product, as portable electric appts such as cellular phone, beep-pager, Bluetooth systems; Concerning the battery powered portable type electronic product of employing, adopt charge pump of the present invention to obtain twice negative supply, not only reduce the quantity of battery, reduce volume, the weight of product, and play great effect in minimizing energy consumption and extending battery life etc.
Accompanying drawing explanation
Fig. 1 is the existing circuit diagram being converted to negative voltage by positive voltage;
Fig. 2 is the circuit diagram of charge pump of the present invention;
Fig. 3 is the circuit diagram of charge pump negative circuit of the present invention;
Fig. 4 is the signal input circuit of charge pump of the present invention is the circuit diagram being produced square-wave signal circuit by this schmitt trigger.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.
Embodiment one
The present embodiment with adopt negative circuit connected to form by PNP triode and peripheral circuit, adopt signal input circuit be by this schmitt trigger generation square-wave signal circuit be that example is described following.
The charge pump that the present invention realizes being converted to by positive voltage twice negative voltage comprises: signal input circuit, the negative circuit for the input signal phasing back by described signal input circuit, the voltage conversion circuit being used for positive voltage to be converted to twice negative voltage, the switching circuit being used for the charging and discharging controlling capacitor in described voltage conversion circuit and output rectification circuit, wherein, the output of signal input circuit is connected with switching circuit by negative circuit, and the output of switching circuit connects voltage conversion circuit and output rectification circuit successively.
The circuit diagram of charge pump of the present invention as shown in Figure 2, voltage conversion circuit is connected to form by electric capacity and PIN diode, electric capacity one C1, PIN diode two D2 are connected successively with electric capacity two C2, be connected with PIN diode one D1 between electric capacity one C1 and PIN diode two D2, be connected with output circuit by PIN diode three D3 between electric capacity two C2 with PIN diode two D2; The electric capacity one C1 other end is then connected to the junction of signal input circuit and negative circuit.Switching circuit is connected to form by N-type MOS transistor Q2 and N-type MOS transistor Q1, and the grid of N-type MOS transistor Q2 is all connected with the output of negative circuit with the grid of N-type MOS transistor Q1; The drain electrode of N-type MOS transistor Q2 and the drain electrode of N-type MOS transistor Q1 are all connected with the one end of electric capacity two C2 in voltage conversion circuit; The substrate of N-type MOS transistor Q2 is connected with power supply with source electrode; The substrate of N-type MOS transistor Q1 and source electrode are connected between electric capacity one C1 of voltage conversion circuit and PIN diode two D2.
As shown in Figure 3, the negative circuit of charge pump is connected to form by PNP triode and peripheral circuit.Wherein, the base stage of PNP type triode Q3 is connected with the parallel connected end of resistance two R4 with resistance one R3, and its emitter is connected with power supply, and its collector electrode is by series resistance three R5 ground connection.As shown in Figure 4, signal input circuit is the circuit being produced square-wave signal by this schmitt trigger.
The first storing energy of the electric capacity of charge pump of the present invention, then by the Co ntrolled release energy of switching circuit to obtain required output voltage.The operation principle of charge pump of the present invention: charge pump of the present invention is made up of signal input circuit, negative circuit, voltage conversion circuit, switching circuit and output circuit.If diode forward conducting step-down is V
f, the amplitude of input square wave is V
cc.
(1) pulse exported when signal input circuit is positive half period, and the positive voltage of input charges to electric capacity one C1 in voltage conversion circuit, and the first storing energy of C1, the voltage at its two ends is V
c1=V
cc-V
f; Simultaneously, the N-type MOS transistor Q2 conducting of positive half period pulse after negative circuit is anti-phase in control switch circuit that signal input circuit exports, N-type MOS transistor Q1 closes, electric capacity two C2, PIN diode two D2 then in N-type MOS transistor Q2 and voltage conversion circuit and PIN diode one D1 loop conducting, then electric capacity two C2 charges, and the voltage at its two ends is V
c2=V
cc-2V
f; Now, the voltage V of A point between electric capacity one C1 and PIN diode two D2
afor V
f, the voltage V of B point between N-type MOS transistor Q2 and electric capacity two C2
bfor V
cc.
(2) pulse exported when signal input circuit is negative half-cycle, and electric capacity one C1 both end voltage can not be suddenlyd change and discharge, then the voltage V of A point between electric capacity one C1 and PIN diode two D2
afor-(V
cc-V
f).The N-type MOS transistor Q1 conducting of negative half-cycle pulse after negative circuit is anti-phase in control switch circuit that signal input circuit exports, N-type MOS transistor Q2 closes, now the voltage V of B point between N-type MOS transistor Q2 and electric capacity two C2
b=V
a=-(V
cc-V
f); Electric capacity two C2 both end voltage can not be suddenlyd change and discharge, then C point voltage V between electric capacity two C2 and PIN diode three D3
c=V
b-V
c2=-2V
cc+ 3V
f.The output voltage of last output rectification circuit is V
0=V
c-V
f=-2 (V
cc-V
f), i.e. V
0=-2V
c1.
Make C1=C2=C, the frequency of signal input circuit square-wave signal is f, then the output impedance of charge pump circuit is
Embodiment two
The present embodiment and embodiment one difference are only: the negative circuit of charge pump is that the inverter that forms of 74HC04 logic chip and peripheral circuit connect to form by model, and other structures are consistent with embodiment one with the operation principle of charge pump.
Embodiment three
The present embodiment and embodiment one difference are only: charge pump signal input circuit is the circuit being produced pwm signal by microcontroller, and other structures are consistent with embodiment one with the operation principle of charge pump.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (7)
1. realize the charge pump being converted to twice negative voltage by positive voltage, it is characterized in that: comprising:
Signal input circuit;
For the negative circuit of the input signal phasing back by described signal input circuit;
For positive voltage being converted to the voltage conversion circuit of twice negative voltage;
For controlling the switching circuit of the charging and discharging of capacitor in described voltage conversion circuit;
And output circuit;
The output of described signal input circuit is connected with switching circuit by negative circuit, and the output of described switching circuit connects voltage conversion circuit and output circuit successively;
Described voltage conversion circuit is connected to form by electric capacity and PIN diode;
Described voltage conversion circuit is connected to form by electric capacity and PIN diode and refers to electric capacity one, PIN diode two is connected successively with electric capacity two, is connected with PIN diode one between electric capacity one and PIN diode two; Described electric capacity two is connected with output circuit by PIN diode three with between PIN diode two; Described electric capacity one other end is connected to the junction of signal input circuit and negative circuit.
2. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described switching circuit is connected to form by N-type MOS transistor and N-type MOS transistor; The grid of described N-type MOS transistor is all connected with the output of negative circuit with the grid of N-type MOS transistor; The described drain electrode of N-type MOS transistor is all connected with voltage conversion circuit with the drain electrode of N-type MOS transistor; The substrate of described N-type MOS transistor is connected with power supply with source electrode; The substrate of described N-type MOS transistor is connected with voltage conversion circuit with source electrode.
3. realization according to claim 2 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: the drain electrode of described N-type MOS transistor and the drain electrode of N-type MOS transistor are all connected drain electrode and the N-type MOS transistor referring to N-type MOS transistor drain electrode with voltage conversion circuit is all connected with one end of the electric capacity two of voltage conversion circuit; The substrate of described N-type MOS transistor and source electrode are connected the substrate that refers to N-type MOS transistor with voltage conversion circuit and source electrode is connected between the electric capacity one of voltage conversion circuit and PIN diode two.
4. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: the inverter that described negative circuit is made up of logic chip and peripheral circuit connect to form, or negative circuit is connected to form by PNP triode and peripheral circuit.
5. realization according to claim 4 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described negative circuit is connected to form by PNP type triode and peripheral circuit and refers to that the base stage of PNP type triode is connected with the parallel connected end of resistance one with resistance two, emitter is connected with power supply, and collector electrode is by series resistance three ground connection.
6. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described signal input circuit is the circuit being produced square-wave signal by this schmitt trigger, or signal input circuit is the circuit being produced pwm signal by microcontroller.
7. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: the described output circuit be connected with voltage conversion circuit is output rectification circuit.
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CN201237887Y (en) * | 2008-07-01 | 2009-05-13 | 深圳秋田微电子有限公司 | Negative pressure generation circuit of LCD module |
CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
CN203278644U (en) * | 2013-05-09 | 2013-11-06 | 广东宽普科技股份有限公司 | A charge pump capable of converting positive voltage into negative voltage with a value twice the value of the positive voltage |
Family Cites Families (3)
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JP2886281B2 (en) * | 1990-07-06 | 1999-04-26 | 新日本無線株式会社 | Boost circuit |
JP2007244078A (en) * | 2006-03-07 | 2007-09-20 | Rohm Co Ltd | Switching power supply, drive circuit therefor, and electronic equipment using them |
CN101860188B (en) * | 2010-06-07 | 2013-08-28 | 鸿富锦精密工业(深圳)有限公司 | Switch power supply circuit |
-
2013
- 2013-05-09 CN CN201310169322.4A patent/CN103248220B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222351B1 (en) * | 1999-01-20 | 2001-04-24 | Stmicroelectronics S.R.L. | Dual supply device with a single direct-current/direct-current converter and capacitive translator |
CN201237887Y (en) * | 2008-07-01 | 2009-05-13 | 深圳秋田微电子有限公司 | Negative pressure generation circuit of LCD module |
CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
CN203278644U (en) * | 2013-05-09 | 2013-11-06 | 广东宽普科技股份有限公司 | A charge pump capable of converting positive voltage into negative voltage with a value twice the value of the positive voltage |
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Address after: 528000, No. five building, No. 4 industrial village, hi tech Industrial Development Zone, Port Road, Chancheng District, Guangdong, Foshan Patentee after: Guangdong quanpu Technology Co., Ltd Address before: 528000, No. five building, No. 4 industrial village, hi tech Industrial Development Zone, Port Road, Chancheng District, Guangdong, Foshan Patentee before: Guangdong Kuanpu Technology Co., Ltd. |