CN103248220A - Charge pump capable of converting positive voltage into double negative voltage - Google Patents
Charge pump capable of converting positive voltage into double negative voltage Download PDFInfo
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- CN103248220A CN103248220A CN2013101693224A CN201310169322A CN103248220A CN 103248220 A CN103248220 A CN 103248220A CN 2013101693224 A CN2013101693224 A CN 2013101693224A CN 201310169322 A CN201310169322 A CN 201310169322A CN 103248220 A CN103248220 A CN 103248220A
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- charge pump
- mos transistor
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Abstract
The invention provides a charge pump capable of converting positive voltage into double negative voltage. The charge pump comprises a signal input circuit, a phase-inverter circuit used for inverting the phase of an input signal of the signal input circuit, a voltage conversion circuit used for converting the positive voltage into double negative voltage, a switching circuit used for controlling the charge and discharge of the capacitor in the voltage conversion circuit, and an output circuit, wherein the output end of the signal input circuit is connected with the switching circuit through the phase-inverter circuit; and the output of the switching circuit is sequentially connected with the voltage conversion circuit and the output circuit. The charge pump provided by the invention adopts a smaller number of electrical components to simplify the charge pump circuit, so as to convert the positive voltage into double negative voltage for output, which avoids using more expensive power supply clip and reduces the production cost of the charge pump; and the charge pump is especially suitable for power supply system of 3.3 V and 5 V, so as to satisfy both the power supply for an operational amplifier, and the supply of bias voltage for backlight of liquid crystal.
Description
Technical field
The present invention relates to the electronic communication field, more particularly, relate to a kind of charge pump.
Background technology
In electronic communication, a lot of control circuits all need to use positive and negative duplicate supply, particularly in electronic product, often need positive-negative power or several different power voltage supply.Concerning battery powered portable product, increase volume and weight that number of batteries must influence product, adopt voltage reversal formula circuit then can in portable product, save a Battery pack.
The bias voltage that provides backlight to amplifier or liquid crystal also is provided general negative supply, and these occasions need have enough low voltage output, and the electric current of its output is all very little, has only several milliamperes to ten milliamperes usually.And the method for tradition generation negative supply can produce negative supply by the DC/DC power supply chip, but these chips generally all need inductance, are unfavorable for the miniaturization of circuit volume and the simplification of circuit; Also have certain methods to adopt IC can replace inductance to produce negative voltage, but that the price of these IC compares is higher, causes the raising of production cost.
Also there is the simplification circuit that can produce negative supply present stage, and as shown in Figure 1, this circuit is converted to negative voltage by positive voltage, but this circuit output voltage only is to transfer negative voltage to by positive voltage, does not realize the rising of output voltage amplitude.Therefore this circuit is for the electric power system of 3.3V and 5V, and this output voltage is too low to the supply voltage that amplifier provides, and the bias voltage that provides backlight to liquid crystal more is not provided.
Summary of the invention
The objective of the invention is to overcome shortcoming of the prior art with not enough, a kind of charge pump of realizing being converted to by positive voltage the twice negative voltage is provided, this charge pump does not need inductance element and required electric elements quantity few, then can simplify the circuit of charge pump and reduce production costs, the electric power system that makes circuit volume miniaturization and be applicable to the portable use product, this charge pump be particularly suitable for 3.3V and 5V is used.
In order to achieve the above object, the present invention is achieved by following technical proposals: a kind of charge pump of realizing being converted to by positive voltage the twice negative voltage is characterized in that: comprising:
Signal input circuit;
Be used for the negative circuit with the input signal phasing back of described signal input circuit;
Be used for positive voltage is converted to the voltage conversion circuit of twice negative voltage;
Be used for the charging of the described voltage conversion circuit capacitor of control and the switching circuit of discharge;
And output circuit;
The output of described signal input circuit is connected with switching circuit by negative circuit, and the output of described switching circuit connects voltage conversion circuit and output circuit successively.
In such scheme, the electric capacity of charge pump elder generation storing energy, the control by switching circuit releases energy to obtain required output voltage then.The electric elements quantity that charge pump of the present invention adopts is the feasible circuit that can simplify charge pump less, thereby realizes being converted to by positive voltage the output of twice negative voltage, reduces the production cost of charge pump; Simultaneously, output current can reach 10 milliamperes, satisfies to the amplifier power supply and the bias voltage that provides backlight of liquid crystal is provided.
Described voltage conversion circuit is connected to form by electric capacity and PIN diode.
More particularly, described voltage conversion circuit is connected to form by electric capacity and PIN diode and refers to that electric capacity one, PIN diode two and electric capacity two are connected successively, are connected with PIN diode one between electric capacity one and the PIN diode two; Be connected with output circuit by PIN diode three between described electric capacity two and the PIN diode two; Described electric capacity one other end is connected the junction of signal input circuit and negative circuit.
Described switching circuit is connected to form by N-type MOS transistor and P type MOS transistor; The grid of the grid of described N-type MOS transistor and P type MOS transistor all is connected with the output of negative circuit; The drain electrode of described N-type MOS transistor all is connected with voltage conversion circuit with the drain electrode of P type MOS transistor; The substrate of described N-type MOS transistor is connected with power supply with source electrode; The substrate of described P type MOS transistor is connected with voltage conversion circuit with source electrode.
The drain electrode of the drain electrode of described N-type MOS transistor and P type MOS transistor all is connected the drain electrode that refers to the N-type MOS transistor and P type MOS transistor with voltage conversion circuit drain electrode all is connected with an end of the electric capacity two of voltage conversion circuit; The substrate of described P type MOS transistor and source electrode are connected with voltage conversion circuit between the electric capacity one and PIN diode two that the substrate that refers to P type MOS transistor and source electrode be connected voltage conversion circuit.
Described negative circuit is connected to form by inverter and the peripheral circuit that logic chip constitutes, and perhaps negative circuit is connected to form by PNP triode and peripheral circuit.
Described negative circuit is connected to form the base stage that refers to the positive-negative-positive triode and is connected with the parallel connected end of resistance three with resistance four by positive-negative-positive triode and peripheral circuit, emitter is connected with power supply, and collector electrode is by series resistance five ground connection.
Serve as reasons this schmitt trigger of described signal input circuit produces the circuit of square-wave signal, and perhaps signal input circuit be the circuit by microcontroller generation pwm signal.
The described output circuit that is connected with voltage conversion circuit is output rectification circuit.
The electric capacity elder generation storing energy of charge pump of the present invention, the control by switching circuit releases energy to obtain required output voltage then.The operation principle of charge pump of the present invention: charge pump of the present invention is made up of signal input circuit, negative circuit, voltage conversion circuit, switching circuit and output circuit.If diode forward conducting step-down is V
f, the amplitude of input square wave is V
Cc
(1) pulse when signal input circuit output is positive half period, and the positive voltage of input charges to electric capacity one C1 in the voltage conversion circuit, C1 elder generation storing energy, and the voltage at its two ends is V
C1=V
Cc-V
fSimultaneously, positive half period pulse N-type MOS transistor Q2 conducting in the control switch circuit after negative circuit is anti-phase of signal input circuit output, P type MOS transistor Q1 closure, then electric capacity two C2 in N-type MOS transistor Q2 and the voltage conversion circuit, PIN diode two D2 and PIN diode one D1 loop conducting, then electric capacity two C2 charging, the voltage at its two ends is V
C2=V
Cc-2V
fAt this moment, the voltage V that A is ordered between electric capacity one C1 and PIN diode two D2
ABe V
f, the voltage V that B is ordered between N-type MOS transistor Q2 and electric capacity two C2
BBe V
Cc
(2) pulse when signal input circuit output is negative half-cycle, and electric capacity one C1 both end voltage can not be suddenlyd change and discharge, then the voltage V that A is ordered between electric capacity one C1 and PIN diode two D2
AFor-(V
Cc-V
f).Negative half-cycle pulse P type MOS transistor Q1 conducting in the control switch circuit after negative circuit is anti-phase of signal input circuit output, N-type MOS transistor Q2 closure, the voltage V that B is ordered between N-type MOS transistor Q2 and electric capacity two C2 at this moment
B=V
A=-(V
Cc-V
f); Electric capacity two C2 both end voltage can not be suddenlyd change and discharge, then C point voltage V between electric capacity two C2 and PIN diode three D3
C=V
B-V
C2=-2V
Cc+ 3V
fThe output voltage of last output rectification circuit is V
0=V
C-V
f=-2 (V
Cc-V
f), i.e. V
0=-2V
C1
Compared with prior art, the present invention has following advantage and beneficial effect:
1, the electric elements quantity that adopts of charge pump circuit of the present invention makes the circuit that can simplify charge pump less, thereby realizes being converted to by positive voltage the output of twice negative voltage, can avoid the power supply chip that uses price higher, reduces the production cost of charge pump.
2, the charge pump of the present invention electric power system that is particularly suitable for 3.3V and 5V is used, and satisfies to the amplifier power supply and the bias voltage that provides backlight of liquid crystal is provided.
3, charge pump circuit volume of the present invention miniaturization and be applicable to the portable use product is as portable electric appts such as cellular phone, beep-pager, Bluetooth systems; Concerning adopting battery powered portable type electronic product, adopt charge pump of the present invention to obtain the twice negative supply, not only reduce the quantity of battery, volume, the weight of minimizing product, and play great effect at aspects such as reducing energy consumption and extending battery life.
Description of drawings
Fig. 1 is the existing circuit diagram that is converted to negative voltage by positive voltage;
Fig. 2 is the circuit diagram of charge pump of the present invention;
Fig. 3 is the circuit diagram of charge pump negative circuit of the present invention;
Fig. 4 is that serve as reasons this schmitt trigger of the signal input circuit of charge pump of the present invention produces the circuit diagram of square-wave signal circuit.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing and embodiment.
Embodiment one
Present embodiment is connected to form by PNP triode and peripheral circuit with the negative circuit that adopts, and adopting the serve as reasons circuit of this schmitt trigger generation square-wave signal of signal input circuit is that example describes following.
The present invention realizes that the charge pump that is converted to the twice negative voltage by positive voltage comprises: signal input circuit, be used for the negative circuit of the input signal phasing back of described signal input circuit, be used for positive voltage is converted to the voltage conversion circuit of twice negative voltage, the charging that is used for the described voltage conversion circuit capacitor of control and switching circuit and the output rectification circuit of discharge, wherein, the output of signal input circuit is connected with switching circuit by negative circuit, and the output of switching circuit connects voltage conversion circuit and output rectification circuit successively.
The circuit diagram of charge pump of the present invention as shown in Figure 2, voltage conversion circuit is connected to form by electric capacity and PIN diode, electric capacity one C1, PIN diode two D2 are connected successively with electric capacity two C2, be connected with PIN diode one D1 between electric capacity one C1 and PIN diode two D2, be connected with output circuit by PIN diode three D3 between electric capacity two C2 and PIN diode two D2; The electric capacity one C1 other end then is connected the junction of signal input circuit and negative circuit.Switching circuit is connected to form by N-type MOS transistor Q2 and P type MOS transistor Q1, and the grid of N-type MOS transistor Q2 all is connected with the output of negative circuit with the grid of P type MOS transistor Q1; The drain electrode of the drain electrode of N-type MOS transistor Q2 and P type MOS transistor Q1 all is connected with the end of electric capacity two C2 in the voltage conversion circuit; The substrate of N-type MOS transistor Q2 is connected with power supply with source electrode; Between electric capacity one C1 and PIN diode two D2 that the substrate of P type MOS transistor Q1 and source electrode are connected voltage conversion circuit.
As shown in Figure 3, the negative circuit of charge pump is connected to form by PNP triode and peripheral circuit.Wherein, the base stage of positive-negative-positive triode Q3 is connected with the parallel connected end of resistance four R4 with resistance three R3, and its emitter is connected with power supply, and its collector electrode is by series resistance five R5 ground connection.As shown in Figure 4, serve as reasons this schmitt trigger of signal input circuit produces the circuit of square-wave signal.
The electric capacity elder generation storing energy of charge pump of the present invention, the control by switching circuit releases energy to obtain required output voltage then.The operation principle of charge pump of the present invention: charge pump of the present invention is made up of signal input circuit, negative circuit, voltage conversion circuit, switching circuit and output circuit.If diode forward conducting step-down is V
f, the amplitude of input square wave is V
Cc
(1) pulse when signal input circuit output is positive half period, and the positive voltage of input charges to electric capacity one C1 in the voltage conversion circuit, C1 elder generation storing energy, and the voltage at its two ends is V
C1=V
Cc-V
fSimultaneously, positive half period pulse N-type MOS transistor Q2 conducting in the control switch circuit after negative circuit is anti-phase of signal input circuit output, P type MOS transistor Q1 closure, then electric capacity two C2 in N-type MOS transistor Q2 and the voltage conversion circuit, PIN diode two D2 and PIN diode one D1 loop conducting, then electric capacity two C2 charging, the voltage at its two ends is V
C2=V
Cc-2V
fAt this moment, the voltage V that A is ordered between electric capacity one C1 and PIN diode two D2
ABe V
f, the voltage V that B is ordered between N-type MOS transistor Q2 and electric capacity two C2
BBe V
Cc
(2) pulse when signal input circuit output is negative half-cycle, and electric capacity one C1 both end voltage can not be suddenlyd change and discharge, then the voltage V that A is ordered between electric capacity one C1 and PIN diode two D2
AFor-(V
Cc-V
f).Negative half-cycle pulse P type MOS transistor Q1 conducting in the control switch circuit after negative circuit is anti-phase of signal input circuit output, N-type MOS transistor Q2 closure, the voltage V that B is ordered between N-type MOS transistor Q2 and electric capacity two C2 at this moment
B=V
A=-(V
Cc-V
f); Electric capacity two C2 both end voltage can not be suddenlyd change and discharge, then C point voltage V between electric capacity two C2 and PIN diode three D3
C=V
B-V
C2=-2V
Cc+ 3V
fThe output voltage of last output rectification circuit is V
0=V
C-V
f=-2 (V
Cc-V
f), i.e. V
0=-2V
C1
Make C1=C2=C, the frequency of signal input circuit square-wave signal is f, and then the output impedance of charge pump circuit is
Embodiment two
Present embodiment and embodiment one difference only are: the negative circuit of charge pump is connected to form for inverter and the peripheral circuit that the 74HC04 logic chip constitutes by model, and the operation principle of other structures and charge pump is consistent with embodiment one.
Embodiment three
Present embodiment and embodiment one difference only are: the charge pump signal input circuit is for being produced the circuit of pwm signal by microcontroller, the operation principle of other structures and charge pump is consistent with embodiment one.
Above-described embodiment is preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (9)
1. a realization is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: comprising:
Signal input circuit;
Be used for the negative circuit with the input signal phasing back of described signal input circuit;
Be used for positive voltage is converted to the voltage conversion circuit of twice negative voltage;
Be used for the charging of the described voltage conversion circuit capacitor of control and the switching circuit of discharge;
And output circuit;
The output of described signal input circuit is connected with switching circuit by negative circuit, and the output of described switching circuit connects voltage conversion circuit and output circuit successively.
2. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, and it is characterized in that: described voltage conversion circuit is connected to form by electric capacity and PIN diode.
3. realization according to claim 2 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described voltage conversion circuit is connected to form by electric capacity and PIN diode and refers to that electric capacity one, PIN diode two and electric capacity two are connected successively, are connected with PIN diode one between electric capacity one and the PIN diode two; Be connected with output circuit by PIN diode three between described electric capacity two and the PIN diode two; Described electric capacity one other end is connected the junction of signal input circuit and negative circuit.
4. realization according to claim 3 is converted to the charge pump of twice negative voltage by positive voltage, and it is characterized in that: described switching circuit is connected to form by N-type MOS transistor and P type MOS transistor; The grid of the grid of described N-type MOS transistor and P type MOS transistor all is connected with the output of negative circuit; The drain electrode of described N-type MOS transistor all is connected with voltage conversion circuit with the drain electrode of P type MOS transistor; The substrate of described N-type MOS transistor is connected with power supply with source electrode; The substrate of described P type MOS transistor is connected with voltage conversion circuit with source electrode.
5. realization according to claim 4 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: the drain electrode of the drain electrode of described N-type MOS transistor and P type MOS transistor all is connected the drain electrode that refers to the N-type MOS transistor and P type MOS transistor with voltage conversion circuit drain electrode all is connected with an end of the electric capacity two of voltage conversion circuit; The substrate of described P type MOS transistor and source electrode are connected with voltage conversion circuit between the electric capacity one and PIN diode two that the substrate that refers to P type MOS transistor and source electrode be connected voltage conversion circuit.
6. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described negative circuit is connected to form by inverter and the peripheral circuit that logic chip constitutes, and perhaps negative circuit is connected to form by PNP triode and peripheral circuit.
7. the realization of stating according to claim 6 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: described negative circuit is connected to form the base stage that refers to the positive-negative-positive triode and is connected with the parallel connected end of resistance three with resistance four by positive-negative-positive triode and peripheral circuit, emitter is connected with power supply, and collector electrode is by series resistance five ground connection.
8. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, it is characterized in that: serve as reasons this schmitt trigger of described signal input circuit produces the circuit of square-wave signal, and perhaps signal input circuit be the circuit by microcontroller generation pwm signal.
9. realization according to claim 1 is converted to the charge pump of twice negative voltage by positive voltage, and it is characterized in that: the described output circuit that is connected with voltage conversion circuit is output rectification circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310169322.4A CN103248220B (en) | 2013-05-09 | 2013-05-09 | A kind ofly realize the charge pump being converted to twice negative voltage by positive voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310169322.4A CN103248220B (en) | 2013-05-09 | 2013-05-09 | A kind ofly realize the charge pump being converted to twice negative voltage by positive voltage |
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|---|---|
| CN103248220A true CN103248220A (en) | 2013-08-14 |
| CN103248220B CN103248220B (en) | 2016-01-20 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0467769A (en) * | 1990-07-06 | 1992-03-03 | New Japan Radio Co Ltd | Step-up circuit |
| US6222351B1 (en) * | 1999-01-20 | 2001-04-24 | Stmicroelectronics S.R.L. | Dual supply device with a single direct-current/direct-current converter and capacitive translator |
| CN101051787A (en) * | 2006-03-07 | 2007-10-10 | 罗姆股份有限公司 | Charge pump type switching power apparatus |
| CN201237887Y (en) * | 2008-07-01 | 2009-05-13 | 深圳秋田微电子有限公司 | Negative pressure generation circuit of LCD module |
| CN101860188A (en) * | 2010-06-07 | 2010-10-13 | 鸿富锦精密工业（深圳）有限公司 | Switch power supply circuit |
| CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
| CN203278644U (en) * | 2013-05-09 | 2013-11-06 | 广东宽普科技股份有限公司 | A charge pump capable of converting positive voltage into negative voltage with a value twice the value of the positive voltage |
-
2013
- 2013-05-09 CN CN201310169322.4A patent/CN103248220B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0467769A (en) * | 1990-07-06 | 1992-03-03 | New Japan Radio Co Ltd | Step-up circuit |
| US6222351B1 (en) * | 1999-01-20 | 2001-04-24 | Stmicroelectronics S.R.L. | Dual supply device with a single direct-current/direct-current converter and capacitive translator |
| CN101051787A (en) * | 2006-03-07 | 2007-10-10 | 罗姆股份有限公司 | Charge pump type switching power apparatus |
| CN201237887Y (en) * | 2008-07-01 | 2009-05-13 | 深圳秋田微电子有限公司 | Negative pressure generation circuit of LCD module |
| CN101860188A (en) * | 2010-06-07 | 2010-10-13 | 鸿富锦精密工业（深圳）有限公司 | Switch power supply circuit |
| CN102769379A (en) * | 2012-07-23 | 2012-11-07 | 孙坚 | Positive and negative voltage generation circuit applicable to silicon-on-insulator (SOI) process |
| CN203278644U (en) * | 2013-05-09 | 2013-11-06 | 广东宽普科技股份有限公司 | A charge pump capable of converting positive voltage into negative voltage with a value twice the value of the positive voltage |
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| Publication number | Publication date |
|---|---|
| CN103248220B (en) | 2016-01-20 |
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Address after: 528000, No. five building, No. 4 industrial village, hi tech Industrial Development Zone, Port Road, Chancheng District, Guangdong, Foshan Patentee after: Guangdong quanpu Technology Co., Ltd Address before: 528000, No. five building, No. 4 industrial village, hi tech Industrial Development Zone, Port Road, Chancheng District, Guangdong, Foshan Patentee before: Guangdong Kuanpu Technology Co., Ltd. |
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