CN103247548B - A kind of wafer defect checkout gear and method - Google Patents
A kind of wafer defect checkout gear and method Download PDFInfo
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- CN103247548B CN103247548B CN201210028685.1A CN201210028685A CN103247548B CN 103247548 B CN103247548 B CN 103247548B CN 201210028685 A CN201210028685 A CN 201210028685A CN 103247548 B CN103247548 B CN 103247548B
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Abstract
A kind of wafer defect checkout gear, comprise light source, sensing cell, control unit and objective table, described control unit comprises graphic process unit, judging unit, computing unit and defect analysis unit.The crystallite dimension judged in wafer when judging unit is too small, when exceeding the sensing function of sensing cell, computing unit can change the atom of sensing cell automatically, make the graphical pixel of crystal grain that the surfacial pattern of crystal grain can be allowed to be correctly validated, thus improve the accuracy of wafer defect detection.The invention allows for the detection method using this wafer defect checkout gear simultaneously.
Description
Technical field
The present invention relates to field in semi-conductor industry, particularly relate to a kind of checkout gear and method of wafer surface defects.
Background technology
In IC manufacturing field, need to adopt the method for photoetching to form figure on the surface of wafer, to obtain the structure of design.In a photolithographic process, due to the impact of reticle, photoresist and other various aspects factor, likely cause the figure existing defects that crystal column surface is formed by photoetching.Therefore whether existing defects judges to the figure of crystal column surface to need to adopt a kind of method.
Judging crystal column surface whether in the defective process of tool, the surface topography of each crystal grain in wafer first to be obtained.Refer to Fig. 1, Fig. 1 is a kind of existing wafer surface defects checkout gear, the light that this device utilizes light source 1 to send, and after wafer 2 surface reflection, sensed device 3 is caught, thus obtains the image information of each grain surface pattern in wafer 2.
After the surface topography obtaining each crystal grain, need the data according to surface topography, adopt the determination methods preset to whether defectiveness judges.In a kind of prior art, judge that defect is the method adopting intercrystalline to compare (dietodiecomparison), with each crystal grain for elementary cell, pass through PaintShop, through the pattern of crystal grain i compared with adjacent two crystal grain, if there is the pattern in somewhere all different from adjacent two crystal grain above crystal grain i, judging to occur defect at this place.
But along with the development of semiconductor fabrication process, also can get more and more at the produced crystal grain of crystal column surface, this detectivity just causing the size of crystal grain likely to exceed sensor 3 reaching.In this case, the crystal grain image captured by sensor 3 just there will be distortion, the problem such as smudgy, makes in defect dipoles process, occurs the situation of a lot of erroneous judgement, causes a large amount of Artifacts to produce.
Therefore be necessary to improve existing detection method, to overcome the problem of Artifact.
Summary of the invention
In view of this, one object of the present invention is the checkout gear proposing a kind of wafer defect, this checkout gear can crystallite dimension in wafer too small, when exceeding the sensing function of sensing cell, automatically can change the atom of sensing cell, make the graphical pixel of crystal grain that the surfacial pattern of crystal grain can be allowed to be correctly validated.The invention allows for the detection method using this wafer defect checkout gear simultaneously.
The checkout gear of a kind of wafer defect that object according to the present invention proposes, comprises light source, sensing cell, control unit and objective table, and described control unit comprises graphic process unit, judging unit, computing unit and defect analysis unit,
Described graphic process unit connects described sensing cell, and the crystal column surface information processing transmitted by this sensing cell becomes to have the figure of identifying information;
Described judging unit judges that, in the figure of described graphic process unit process, whether the image of single crystal grain is clear;
Computing unit is then according to above-mentioned judged result, and calculate the atom of X, Y-axis in the described figure of setting, the crystal grain number that this atom comprises makes the size of this atom mate with the sensing function of described sensing cell;
Described defect analysis unit carries out a defect analysis operation to the image of described single crystal grain.
Preferably, described light source is mercury lamp.
Preferably, described sensing cell is charge coupled cell.
Preferably, described objective table is provided with fixture, and the below of objective table is also provided with the drive unit of X, Y-direction and Z axis rotation.
According to another object of the present invention, this detection method uses above-mentioned wafer detecting apparatus, comprises step:
Obtain the integral surface figure of wafer, using the length and width size of single crystal grain as the first coordinate system of the atom of X, Y-axis on this integral surface figure;
The figure of single crystal grain is identified, judges that whether the figure of single crystal grain is clear;
According to above-mentioned judged result, this integral surface figure calculates setting is of a size of X, Y-axis atom the second coordinate system with the length and width of an integer crystal grain;
With described second coordinate system, this crystal column surface is taken, and a defect analysis operation is performed to the figure of shooting gained.
Preferably, during the integral surface figure of described acquisition wafer, comprise process wafer being fixed to objective table and wafer is positioned.
Preferably, after described first coordinate system is formed, a trimming program is performed to crystal round fringes scope.
Preferably, the process setting up described second coordinate system comprises: respectively in X-direction and Y direction, increase atom in the mode increasing crystal grain quantity, this crystal grain quantity makes the size of this atom and the sensing function of sensing cell match.
When using above-mentioned checkout gear to carry out defects detection to wafer, the problem that the pixel that causes because crystal grain is too small is inadequate can be avoided, improve the accuracy of defects detection.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of existing wafer surface defects checkout gear.
Fig. 2 is the structural representation of wafer defect checkout gear of the present invention.
Fig. 3 is a kind of surface texture of wafer.
Fig. 4 is wafer defect detection method schematic flow sheet of the present invention.
Embodiment
Refer to Fig. 2, Fig. 2 is the structural representation of wafer defect checkout gear of the present invention, and as shown in the figure, this wafer defect checkout gear comprises light source 11, sensing cell 13, control unit 10 and objective table 12.One wafer 20 to be detected is positioned on described objective table 12.
Light source 11 can be mercury lamp in a kind of embody rule, and this light source 11 is arranged at the top of described wafer 20, and throws light on to wafer 20 surface.Optionally, can arrange some optical elements between light source 11 and wafer 20, these optical elements are for example the concave-convex lenss changing light beam focal length, or change the level crossing of optical path direction.By these optical elements, the image information of crystal column surface sensed unit 13 clearly can be made to catch.
Sensing cell 13 is a kind of filming image devices, such as charge coupled cell (Charge-coupledDevice, CCD), this sensing cell 13 is by accepting wafer 20 surface reflection light out, capture the surface image information of wafer 20, and these surface image convert information are become the signal of telecommunication.Preferably, sensing cell 13 can choose the CCD that one has time delay integration (TimeDelayandIntegration, TDI) function, so just can carry out image capturing to the object in fast moving.
Objective table 12 is in order to place wafer 20 to be measured.This objective table 12 is provided with fixture, such as vacuum cup or jump ring etc., and wafer 20 can be made to be fixed on all the time on objective table 12 in testing process.In one application, be provided with the drive unit (not shown) that X, Y-direction and Z axis rotate below this objective table 12, this drive unit can do mobile and rotates around Z axis by driving objective table 12 in the x, y direction.
Control unit 10 comprises graphic process unit 101, judging unit 102, computing unit 103 and defect analysis unit 104.
Described graphic process unit 101 connects described sensing cell 13, and the surface information of the wafer 20 transmitted by this sensing cell 13 is processed into the figure with identifying information.This graphic process unit 101 is such as the personal computer PC with graphics capability, the signal of telecommunication sent by sensing cell 13, after the process of this graphic process unit 101, generates the surfacial pattern of wafer 20, and carries out identifying operation to this surfacial pattern.Described identifying operation is such as according to the comparison of light and shade in figure, identifies shape and the surface texture of single crystal grain, and then resolves this figure, sets up the coordinate system being of a size of X, Y-axis atom with the length and width of single crystal grain in this figure.
Described judging unit 102 judges that in the figure that described graphic process unit 101 processes, whether the image of single crystal grain is clear.This is clear refers to: for the image of single crystal grain, whether comprise abundant pixel, CONSTRUCTED SPECIFICATION all in this image is showed.If in whole figure, the image ratio of single crystal grain is fuzzyyer, then judging unit 102 assert the undersized of crystal grain in wafer 20, exceed the sensing function of described sensing cell 13, now judging unit 102 can notify that computing unit 103 adjusts the size of atom, this adjustment is using the length and width size of the multiple crystal grain of integer in X-axis, Y-axis as atom, do crystal column surface and again take, concrete crystal grain quantity is as the criterion can match with the pixel of the figure captured by sensing cell.And if judging unit 102 judges that the image of described single crystal grain is enough clear, then notify that computing unit 103 directly carries out the detection of defect to single crystal grain.
Computing unit 103 is according to above-mentioned judged result, and calculate the atom of X, Y-axis in the described figure of setting, the crystal grain number that this atom comprises makes the size of this atom mate with the sensing function of described sensing cell.Particularly, when judged result is for identifying, namely when the crystallite dimension of single is within the sensing function scope of sensing cell 13, then direct defects detection is carried out to single crystal grain, and when the crystallite dimension of single is too little, when exceeding the sensing function of sensing cell 13, just need to reset X, the atom of Y-axis, the size of this atom and the sensing function of sensing cell 13 match, the crystal grain quantity of the size meeting above-mentioned atom is calculated by computing unit 103, then according to this crystal grain quantity, crystal column surface is divided, order sensing cell 13 is focused simultaneously, the wafer area in rear corresponding scope is amplified in picked-up, make in the figure of this time picked-up, the surfacial pattern of single crystal grain comprises abundant pixel identifying clearly, because the wafer area now taken must not be whole wafer, so need the movement by objective table, carry out shooting continuously with the graphical information obtaining all crystal grains in this wafer.
Described defect analysis unit 104 carries out a defect analysis operation to the figure of described single crystal grain.Particularly, can according to the crystal grain image after taking with described atom, generate and analyze pattern, then same reference pattern is compared, this reference pattern can, for the standard pattern preset, also can be the pattern of two the minimum crystal grain in left and right adjoined mutually with current grain, as long as judge whether current grain has difference with reference to pattern, if there is no difference, then judge that this crystal grain is as qualified; If there is difference, then judge that difference place is as defective locations.Until all crystal grain is all analyzed complete, generate the defect map of whole crystal column surface, and be reflected in an output device, such as display, with the further operation facilitating personnel according to this defect map, wafer to be carried out to defect.
Below, be described in detail in the method using above-mentioned wafer detecting apparatus to carry out wafer defect detection to the present invention.
Please first see the surface texture that Fig. 3, Fig. 3 are a kind of wafers.As shown in the figure, this wafer 20 surface comprises multiple crystal grain 21.Crystal grain 21 constitutes the minimum not recurring unit of wafer 20.On crystal grain 21, define the semiconductor integrated circuit structure with various Electricity Functional.Also be provided with groove (not shown) between usual crystal grain and crystal grain, use for follow-up cutting.
As shown in Figure 4, wafer defect detection method of the present invention comprises the steps:
S11: the integral surface figure obtaining wafer, using the length and width size of single crystal grain as the first coordinate system of the atom of X, Y-axis on this integral surface figure;
S12: identify the figure of single crystal grain, judges that whether the figure of single crystal grain is clear;
S13: according to above-mentioned judgement structure, this integral surface figure calculates setting is of a size of X, Y-axis atom the second coordinate system with the length and width of an integer crystal grain;
S14: this crystal column surface is taken with described second coordinate system, and a defect analysis operation is performed to the figure of shooting gained.
With reference to described step S11, specifically comprise step:
First by the suitable device instrument such as mechanical arm, wafer was moved to the objective table of crystal column surface checkout gear of the present invention from last board.Wafer is fixed by means such as vacuum suction by objective table.Also comprise the process of wafer being carried out to contraposition during fixing wafer, this contraposition process, by identifying the alignment mark of crystal column surface, makes this alignment mark reach the position preset and is as the criterion.This alignment mark can be the ad hoc alignment mark of wafer itself, in such as preceding working procedure in order in the alignment mark of photoetching contraposition or later process in order to cut the alignment mark of contraposition, also can be obvious circuit devcie in wafer on certain crystal grain as alignment mark, conveniently identify as long as meet this alignment mark.The necessity of this contraposition process is, wafer is when repeatedly taking or when carrying out follow shot to wafer, and before and after can making as a location criteria, the wafer figure of shooting has consistency.
There is the one side of function element upwards with wafer, with light source, this wafer is irradiated, by suitable light path element, the utilizing emitted light allowing sensing cell capture crystal column surface to send, thus the image information obtaining crystal column surface.
The crystal column surface information processing that this sensing cell transmits by graphic process unit becomes to have the figure of identifying information.According to the comparison of light and shade in this figure, identify shape and the surface texture of single crystal grain, and then this figure is resolved, in this figure, set up the first coordinate system being of a size of X, Y-axis atom with the length and width of single crystal grain.
Further, in the first coordinate system, a trimming program can be performed to crystal round fringes scope.Usually when wafer does photoetching, because the round-shaped of wafer is not mate completely with the rectangular shape of crystal grain, so there will be a lot of incomplete crystal grain in the scope near crystal round fringes.The object of trimming is these inherently incomplete crystal grain removals, erroneous judgement behavior when judging to avoid subsequent defective.The scope of trimming roughly about 2500um to 3500um, depending on the size of wafer and the size of crystal grain.
With reference to described step S12, specifically comprise step:
Single grain pattern in first coordinate system is first amplified, then to choose in single grain pattern two contiguous circuit lines or two electronic devices as analytic target, judge that whether the figure of single crystal grain is clear.If the pixel comprised in the figure of this single crystal grain is abundant, then after pattern visual evoked potentials, some CONSTRUCTED SPECIFICATION comprised in figure are according to being resolved, if and pixel is insufficient, then amplification after there will be distortion, fuzzy, mix unclear phenomenon, cause the CONSTRUCTED SPECIFICATION in figure to be difficult to be distinguished.Whether judging unit identifies single grain pattern according to above-mentioned principle, clear to judge the figure of single crystal grain in this first coordinate system, and namely whether the size of single crystal grain can match with the sensing function of sensing cell.
With reference to described step S13, specifically comprise step:
When judged result be single crystal grain figure can clear identification time, namely when the crystallite dimension of single is within the sensing function scope of sensing cell 13, then the direct recognition unit using single crystal grain as next step defects detection; And when the crystallite dimension of single is too little, when exceeding the sensing function of sensing cell 13, just need the atom resetting X, Y-axis, the size of this atom and the sensing function of sensing cell 13 match.The crystal grain quantity of the size meeting above-mentioned atom is calculated by computing unit 103.Such as, for X-direction, if the pixel of single crystal grain is inadequate in the direction in which, then increase atom in the mode increasing crystal grain quantity in the direction in which, like this equally for Y direction.The mode of this increase crystal grain can be that single direction increases, and also can all increase in the two directions.Then with the length and width size of the multiple crystal grain of this integer, as the atom of new X, Y-axis, the second coordinate system is set up.
With reference to described step S14, specifically comprise step:
Size according to this second coordinate system is taken again to wafer, order sensing cell 13 is focused, the wafer area in rear corresponding scope is amplified in picked-up, make in the figure of this time picked-up, the length and width size of single grain pattern is mated with the atom in above-mentioned second coordinate system, makes the graphics package of single crystal grain containing abundant pixel identifying clearly with this.
Further, because the wafer area now taken must not be whole wafer, so need the movement by objective table, carry out shooting continuously with the graphical information obtaining all crystal grains in this wafer.
After the surfacial pattern of all crystal grains is all identified, every crystal grain is carried out to the step of defects detection.Particularly, can according to the image of current single crystal grain, generate and analyze pattern, then same reference pattern is compared, this reference pattern can, for the standard pattern preset, also can be the pattern of two the minimum crystal grain in left and right adjoined mutually with current grain, as long as judge whether current grain has difference with reference to pattern, if there is no difference, then judge that this crystal grain is as qualified; If there is difference, then judge that difference place is as defective locations.Until all crystal grain is all analyzed complete, generate the defect map of whole crystal column surface, and be reflected in an output device, such as display, with the further operation facilitating personnel according to this defect map, wafer to be carried out to defect.
In sum, the present invention proposes a kind of checkout gear and detection method of wafer defect, this checkout gear includes in order to when in wafer, the size of single crystal grain is less than the sensing function of sensing cell, automatic analysis calculates the atom regulating sensing cell, the dimension of picture of single crystal grain is mated with this atom, make the graphics package of crystal grain containing abundant pixel with this, thus the fine structure of grain surface can be identified accurately when carrying out defect analysis, improve the accuracy that wafer defect is analyzed.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a wafer defect checkout gear, comprises light source, sensing cell, control unit and objective table, it is characterized in that: described control unit comprises graphic process unit, judging unit, computing unit and defect analysis unit,
Described graphic process unit connects described sensing cell, and the crystal column surface information processing transmitted by this sensing cell becomes to have the figure of identifying information;
Described judging unit judges that, in the figure of described graphic process unit process, whether the image of single crystal grain is clear;
Computing unit is then according to above-mentioned judged result, and calculate the atom of X, Y-axis in the described figure of setting, the crystal grain number that this atom comprises makes the size of this atom mate with the sensing function of described sensing cell;
Described defect analysis unit carries out a defect analysis operation to the image of described single crystal grain.
2. wafer defect checkout gear as claimed in claim 1, is characterized in that: described light source is mercury lamp.
3. wafer defect checkout gear as claimed in claim 1, is characterized in that: described sensing cell is charge coupled cell.
4. wafer defect checkout gear as claimed in claim 1, is characterized in that: described objective table is provided with fixture, and the below of objective table is also provided with makees drive unit that is mobile and that rotate around Z axis in X, Y-direction.
5. a wafer defect detection method, this detection method uses wafer detecting apparatus as claimed in claim 1, it is characterized in that comprising step:
Obtain the integral surface figure of wafer, using the length and width size of single crystal grain as the first coordinate system of the atom of X, Y-axis on this integral surface figure;
The figure of single crystal grain is identified, judges that whether the figure of single crystal grain is clear;
According to above-mentioned judged result, this integral surface figure calculates setting is of a size of X, Y-axis atom the second coordinate system with the length and width of an integer crystal grain;
With described second coordinate system, this crystal column surface is taken, and a defect analysis operation is performed to the figure of shooting gained.
6. wafer defect detection method as claimed in claim 5, is characterized in that: when the integral surface figure of described acquisition wafer, comprises process wafer being fixed to objective table and positioning wafer.
7. wafer defect detection method as claimed in claim 5, is characterized in that: after described first coordinate system is formed, performs a trimming program to crystal round fringes scope.
8. wafer defect detection method as claimed in claim 5, it is characterized in that: the process setting up described second coordinate system comprises: respectively in X-direction and Y direction, increase atom in the mode increasing crystal grain quantity, this crystal grain quantity makes the size of this atom and the sensing function of sensing cell match.
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| CN107356601A (en) * | 2017-07-25 | 2017-11-17 | 上海华力微电子有限公司 | A kind of automatic defect of defect checking machine platform is presorted method for reporting |
| CN111855662B (en) * | 2019-04-30 | 2023-07-25 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection device and method |
| CN111426701B (en) * | 2019-06-25 | 2024-01-30 | 合肥晶合集成电路股份有限公司 | Wafer defect detection method and device |
| CN112461838B (en) * | 2019-09-09 | 2023-03-10 | 芯恩（青岛）集成电路有限公司 | Wafer defect detection device and method |
| CN111916366B (en) * | 2020-07-29 | 2024-04-12 | 上海果纳半导体技术有限公司 | Wafer inspection apparatus |
| CN113358662A (en) * | 2021-06-10 | 2021-09-07 | 广东奥普特科技股份有限公司 | Wafer surface defect detection device and wafer surface defect detection method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101334414A (en) * | 2007-06-29 | 2008-12-31 | 中芯国际集成电路制造(上海)有限公司 | Defect checking machine platform matching method |
| CN101738400A (en) * | 2008-11-14 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method and device for judging repeated defects on surface of wafer |
| CN102023168A (en) * | 2010-11-08 | 2011-04-20 | 北京大学深圳研究生院 | Method and system for detecting chips on semiconductor wafer surface |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4032036B2 (en) * | 2004-03-23 | 2008-01-16 | 株式会社東芝 | Defect inspection equipment |
| TWI365504B (en) * | 2008-12-31 | 2012-06-01 | Die defect inspecting system for inspecting the defect of a back surface of a die and method for using the same | |
| US8692878B2 (en) * | 2009-06-19 | 2014-04-08 | Kla-Tencor Corporation | Methods and apparatus for simultaneously inspecting multiple array regions having different pitches |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101334414A (en) * | 2007-06-29 | 2008-12-31 | 中芯国际集成电路制造(上海)有限公司 | Defect checking machine platform matching method |
| CN101738400A (en) * | 2008-11-14 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method and device for judging repeated defects on surface of wafer |
| CN102023168A (en) * | 2010-11-08 | 2011-04-20 | 北京大学深圳研究生院 | Method and system for detecting chips on semiconductor wafer surface |
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