CN103221999A - Alloy for seed layer of magnetic recording medium, and sputtering target material - Google Patents
Alloy for seed layer of magnetic recording medium, and sputtering target material Download PDFInfo
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- CN103221999A CN103221999A CN2011800557768A CN201180055776A CN103221999A CN 103221999 A CN103221999 A CN 103221999A CN 2011800557768 A CN2011800557768 A CN 2011800557768A CN 201180055776 A CN201180055776 A CN 201180055776A CN 103221999 A CN103221999 A CN 103221999A
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
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- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
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- C22C38/008—Ferrous alloys, e.g. steel alloys containing tin
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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Abstract
Provided is an alloy for a seed layer of a magnetic recording medium, wherein an Ni-based intermediate layer on a soft magnetic underlayer (SUL) has magnetism, and the magnetic permeability can be increased. This alloy contains: one or more kinds of M1 elements selected from the group consisting of W, Mo, Ta, Cr, V and Nb, in 2 to 20 at% of the alloy; one or more kinds of M2 elements selected from the group consisting of Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and Ru, in 0 to 10 at% of the alloy; and at least two kinds of Ni, Fe and Co as the balance. The amount of Ni, Fe and Co satisfies (i) the ratio of Ni:Fe:Co = 98 to 20:0 to 50:0 to 60, and Fe+Co>=1.5, or (ii) the ratio of Ni:Fe:Co = 98 to 20:2 to 50:0 to 60, when expressed by at% relative to the total amount of Ni+Fe+Co.
Description
The cross-reference of association request
The application advocates Japanese patent application 2010-259713 number and Japanese patent application 2011-94594 number right of priority of application on April 21st, 2011 based on application on November 22nd, 2010, and their whole disclosure is introduced in this instructions with the form of reference.
Technical field
The present invention relates to as the Ni-Fe-Co that the inculating crystal layer in the perpendicular magnetic recording medium uses is that the inculating crystal layer of magnetic recording media is with alloy and sputtering target material.
Background technology
In recent years, the perpendicular magnetic recording marked improvement in order to realize the high capacity of driver, and advances the high record densityization of magnetic recording media.For example, compare with magnetic recording media in the face of having popularized at present, the perpendicular magnetic recording that can realize higher recording density is practicability.At this, perpendicular magnetic recording is meant that easy magnetizing axis forms in the mode that vertically is orientated with respect to the medium face in the magnetic film of perpendicular magnetic recording medium, is the method that is suitable for high record density.
In perpendicular magnetic recording, develop the recording medium that has improved recording density with magnetic recording rete and soft magnetism rete, with regard to this dielectric structure, developed the recording medium that between soft ferromagnetic layer and magnetic recording layer film forming has inculating crystal layer, basement membrane layer.With regard to the inculating crystal layer that perpendicular magnetic recording is used, for example, as disclosed in the TOHKEMY 2009-155722 communique (patent documentation 1), the alloy of Ni-W system has been proposed.
The Ni-W that this patent documentation 1 is put down in writing is that alloy does not add the VIII family with magnetic, and having added IVa family (Ti, Zr, Hf), Va family (V, Nb, Ta), VIa family (Cr, Mo, W), VIIa family (Mn, Tc, Re), IIIb family (B, Al, Ga, In, Tl), the IVb family (C, Si, Ge, Sn, Pb) of nonmagnetic elements, it is non magnetic that the result is.At this, one of desired characteristic of inculating crystal layer is as follows: shown in its title, for to form on the inculating crystal layer the layer orientation control, and the easy magnetizing axis of the magnetic film of record magnetic information vertically is orientated with respect to the medium face, thereby inculating crystal layer itself has independent fcc structure, and the face parallel with the medium face is orientated along (111) face.In addition, need make the grain size number of magnetic film as far as possible little, for this reason, expect littler than the grain size number of inculating crystal layer in order to improve recording density.
Summary of the invention
On the other hand, in recent years, as a kind of method of the magnetic recording characteristic that improves hard disk drive, having begun one's study makes inculating crystal layer have the method for magnetic.But as mentioned above, the inculating crystal layer alloy that patent documentation 1 is put down in writing is non magnetic, the not talkative inculating crystal layer alloy with magnetic that is suitable as.Therefore, require exploitation to possess as mentioned above as the inculating crystal layer desired characteristic of alloy, and the inculating crystal layer alloy with magnetic.In addition, as between soft ferromagnetic layer and the inculating crystal layer than big-difference, with regard to soft ferromagnetic layer, it requires in order to reduce noise is amorphous, with regard to inculating crystal layer, it requires the effect of the orientation of the layer that forms on control inculating crystal layer, and requires to have high crystalline on the contrary as amorphous amorphous phase.
This time, the inventor finds that the element of Fe and the Co that have the VIII family of magnetic by interpolation can make inculating crystal layer have magnetic, and by making coercive force reduction raising magnetic permeability of (111) face direction.
Therefore, the objective of the invention is to, it is that the middle layer inculating crystal layer of magnetic recording media that has magnetic and can improve magnetic permeability is with alloy and the sputtering target material that used this alloy that the Ni that can make on the soft magnetism basilar memebrane (SUL) is provided.
According to a kind of scheme of the present invention, a kind of inculating crystal layer alloy of magnetic recording media is provided, described alloy contains:
Be selected from one or more the M1 element among W, Mo, Ta, Cr, V and the Nb, described M1 element is 2～20at% of described alloy;
Be selected from one or more the M2 element among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru, described M2 element is 0～10at% of described alloy;
As Ni, Fe and the Co of remainder, described Ni, Fe and Co are the ratio of Ni: Fe: Co=98～20: 0～50: 0～60 and Fe+Co 〉=1.5 in the at% with respect to the total amount of Ni+Fe+Co.
According to other schemes of the present invention, a kind of inculating crystal layer alloy of magnetic recording media is provided, described alloy contains:
Be selected from one or more the M1 element among W, Mo, Ta, Cr, V and the Nb, described M1 element is 2～20at% of described alloy;
Be selected from one or more the M2 element among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru, described M2 element is 0～10at% of described alloy;
As Ni, Fe and the Co of remainder, described Ni, Fe and Co are the ratio of Ni: Fe: Co=98～20: 2～50: 0～60 in the at% with respect to the total amount of Ni+Fe+Co.
According to other schemes of the present invention, provide a kind of sputtering target material that comprises above-mentioned alloy.
According to other schemes of the present invention, provide a kind of magnetic recording media that possesses the inculating crystal layer that comprises above-mentioned alloy.
Embodiment
Below, the present invention is specifically described." % " represents at% unless otherwise specified, in this manual.
The inculating crystal layer of the magnetic recording media that is obtained by the present invention contains (comprising) with alloy: be selected from W, Mo, Ta, Cr, the M1 element of one or more among V and the Nb, described M1 element is 2～20at% of alloy, be selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, the M2 element of one or more among C and the Ru, described M2 element is 0～10at% of alloy, Ni as remainder, among Fe and the Co at least two kinds, preferably constitute (consisting essentially of) by these elements and unavoidable impurities in fact, more preferably only constitute (consisting of) by these elements and unavoidable impurities.Wherein, each amount of Ni, Fe and Co is in the at% with respect to the total amount of Ni+Fe+Co, is made as the ratio of (i) Ni: Fe: Co=98～20: 0～50: 0～60 and Fe+Co 〉=1.5 or is made as the ratio of (ii) Ni: Fe: Co=98～20: 2～50: 0～60.
In the alloy that is obtained by the present invention, be shown Ni at the schedule of proportion with Ni, Fe and Co: Fe: under the situation of Co=α: β: γ, making the at of Ni is 98 (being 98.5 more strictly speaking)～20 than α, is preferably 98 (being 98.5 more strictly speaking)～60.If α surpasses 98.5, then β+γ becomes less than 1.5, and coercive force uprises, even α is also identical with above-mentioned situation less than 20, coercive force uprises.
Fe is the element that reduces coercive force, and, still improve the element of the orientation of film, be expressed as Ni: Fe: under the situation of Co=α: β: γ, making the at of Fe is 0～50 than β, is preferably 2～50%, more preferably 10～40.If β surpasses 50, then coercive force uprises.
Co is the element that reduces the coercive force of (111) direction, and be made as Ni: Fe: under the situation of Co=α: β: γ, making the at of Co is 0～60 than γ, is preferably below 40.If γ surpasses 60, then coercive force uprises.
The alloy that is obtained by the present invention contains one or more the M1 element that is selected among W, Mo, Ta, Cr, V and the Nb, and described M1 element is 2～20at% of whole alloys, is preferably 5～15%.This M1 element is that to have dystectic bcc be metal, though its mechanism it be unclear that, but this M1 element is by being added in composition range given to this invention in the fcc alloy system, thereby improve the desired orientation of inculating crystal layer, and make the element of crystal grain miniaturization at (111) face.But, if the M1 amount of element less than 2%, then its effect is insufficient, in addition, if the M1 amount of element surpasses 20%, then compound is separated out, and amorphization perhaps takes place.As the inculating crystal layer alloy, because requirement is single-phase for fcc, so the scope of its M1 amount of element as mentioned above.
In the above-mentioned element,, therefore preferably add among W and the Mo one or both to the orientation of (111) face effectively W and Mo, can also add among Cr, Ta, V and the Nb any one or two or more.Its reason is that in the combination of Ni and high-melting-point bcc metal, it is therefore more favourable that the fusing point of Mo and W is higher than Cr.In addition, compare with W and Mo, the raising amorphism aspect that is added on of Ta, V or Nb also plays a role, and is unfavorable for that the desired fcc of inculating crystal layer forms mutually.Cr preferably adds above 5%, and is in this case, favourable aspect orientation.
The alloy that is obtained by the present invention contains one or more the M2 element that is selected among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru as arbitrary element, described M2 element is 0～10at% of alloy, be preferably 1～10%, more preferably 5%.This M2 element is the element that makes (111) planar orientation, in addition, is the element that makes the crystal grain miniaturization.But, if the M2 amount of element surpasses 10%, then generate compound, amorphization perhaps takes place.In addition, the total amount of M1+M2 is preferably below the 25at%, more preferably below the 20at%.
Embodiment
Below, by embodiment the present invention is specifically described.
Usually, the inculating crystal layer in the perpendicular magnetic recording medium is the sputtering target material by sputter and its composition identical component, and film forming obtains on glass substrate etc.At this, the film of the film forming by sputter is carried out chilling.Try material as supplying among the present invention, use the chilling strip that utilizes the quenching apparatus of mono-roller type and make.This can utilize the liquid quench strip simply, in the reality because of sputter by the film of chilling and film forming, estimate by the influence that becomes branch to bring each characteristic
The making of chilling strip
Utilize the water-cooled copper mold about diameter 10mm, length 40mm that the raw material 30g of the weighing according to the composition of table 1 is reduced pressure, in Ar, carry out arc-melting, make the fusion mother metal of chilling strip.The manufacturing conditions of chilling strip is as follows: with single roller mode, in quartzy jar of diameter 15mm, place this fusion mother metal, the tapping nozzle diameter is made as 1mm, is that the gap of 3000rpm, copper roller and tapping nozzle is to carry out tapping under the condition of 0.3mm at the rotating speed of atmosphere pressures 61kPa, spraying pressure reduction 69kPa, copper roller (diameter 300mm).The tapping temperature is made as respectively dissolves after mother metal just melted.The chilling strip of making is by this way tried material as supplying, following project is estimated.
The evaluation of coercive force
In the coercimeter of vibration sample type, on sample bench, attach the chilling strip with double faced adhesive tape, utilize the coercive force of the initial externally-applied magnetic field mensuration chilling strip of 144kA/m.With coercive force is that average evaluation below the 300A/m is zero, will be △ above 300A/m and the following average evaluation of 500A/m, will be above the average evaluation of 500A/m *.
The evaluation of saturation magnetic flux density
In VSM device (vibration sample type magnetometer), utilize the saturation magnetic flux density of the externally-applied magnetic field mensuration chilling strip of 1200kA/m.Weight for the examination material is about 15mg, is zero with the average evaluation more than the 0.2T, will be less than the average evaluation of 0.2T *.
(111) planar orientation evaluation
The inculating crystal layer of film forming is the fcc structure by sputter.By the inculating crystal layer chilling, and (200) are orientated.Usually, if random orientation takes place, then with regard to the X-ray diffraction intensity of (111) face and (200) face, I (200) will be higher than I (111).Therefore, by following method the orientation of (111) face of chilling strip is estimated.
On glass plate, attach for the examination material, utilize the X-ray diffraction device to obtain diffracting spectrum with double faced adhesive tape.At this moment, so that becoming the mode of the copper roller surface of contact of chilling strip, the mensuration face attaches confession examination material.X-ray source is the Cu-alpha ray, measures with the sweep velocity of 4 °/min.Will strength ratio I (the 111)/I (200) between the intensity I (111) of the X ray of (111) of this diffracting spectrum face generation diffraction and the intensity I (200) at the X ray of (200) face generation diffraction less than 0.7 average evaluation be *, be zero with the average evaluation more than 0.7.In addition, with generating the situation of compound, average evaluation that amorphization takes place be *.
The evaluation of crystallization particle diameter
On the roller direction of the cross section of chilling strip microstructure image, measure the crystallization particle diameter of chilling strip according to JIS G0551 " the micrographic test method of steel grain size number ".With P/Lt is that average evaluation more than 1.0 is zero, with 0.5 with and be △ less than 1.0 average evaluation, will be less than 0.5 average evaluation *.
[table 1]
[table 2]
[table 3]
[table 4]
[table 5]
Notes) underscore is illustrated in outside the condition of the present invention
[table 6]
[table 7]
[table 8]
Notes) underscore is illustrated in outside the condition of the present invention
Shown in table 1～8, No.1～95,125～188 are example of the present invention, and No.96～124 and 189～193 are comparative example.No.194 is a reference example.
Need to prove that with regard to for example No.1 of record in becoming shown in table 1～8 to be grouped into, W is 2at%, therefore (Ni2Fe) is 100%-2%, i.e. 98at%, and when with this 98% when being made as 1, Ni is the ratio of (100-2), Fe is 2 ratio.In addition, owing to do not contain Co, so its ratio is equivalent to 0.Similarly, with regard to No.50, W and In add up to 7at%, and therefore (Ni50Fe) is 100%-7%, i.e. 93at%, when this 93at% is made as 1, Ni is the ratio of 100-50, and Fe is 50 ratio, this means Ni and Fe with at than counting identical ratio, being respectively half of 93at%, promptly respectively is 46.5at%.
Comparative example No.96 only contains Ni, the coercive force height, and orientation and crystallization particle diameter are all poor.Comparative example No.97 does not contain the M element, and orientation and crystallization particle diameter are all poor.The Fe content height of comparative example No.98, so coercive force uprises.Low and the Al content height of the content of the W of comparative example No.99, so coercive force uprises and poor orientation slightly.Therefore the W content height of comparative example No.100 is difficult to measure coercive force, in addition, and saturation magnetic flux density and poor orientation.
The content of comparative example No.101,102 W is low, and the content height of Zr and B, so poor orientation.The content of the Ni of comparative example No.103 is low, the content height of Fe, so coercive force uprises.The content of the Ni of comparative example No.104 is low, the content height of Fe, so coercive force uprises.The content of the Cr of comparative example No.105 is low, so the coercive force height, and orientation and crystallization particle diameter are all poor.The content height of the Cr of comparative example No.106, therefore whole characteristics is all poor.The content of the Mo of comparative example No.107 is low, so the coercive force height, and orientation and crystallization particle diameter are all poor.
The content height of the Mo of comparative example No.108, therefore whole characteristics is poor.The content of the Ta of comparative example No.109 is low, so the coercive force height, and orientation and crystallization particle diameter are poor.The content height of the Ta of comparative example No.110, therefore whole characteristics is poor.The content of the V of comparative example No.111 is low, so the coercive force height, and orientation and crystallization particle diameter are all poor.The content height of the V of comparative example No.112, therefore whole characteristics is poor.The content of the Nb of comparative example No.113 is low, so the coercive force height, and orientation and crystallization particle diameter are all poor.
The content height of the Nb of comparative example No.114, therefore whole characteristics is poor.The content height of the Ca of comparative example No.115, therefore orientation formation and crystallization particle diameter are poor.The content height of the In of comparative example No.116, therefore orientation formation and crystallization particle diameter are poor.The content height of the Si of comparative example No.117, therefore orientation formation and crystallization particle diameter are poor.The content height of the Ge of comparative example No.118, therefore orientation formation and crystallization particle diameter are poor.The content height of the Ti of comparative example No.119, therefore orientation formation and crystallization particle diameter are poor.
The content height of the Hf of comparative example No.120, therefore orientation formation and crystallization particle diameter are poor.The content height of the Cu of comparative example No.121, therefore orientation formation and crystallization particle diameter are poor.The content height of the P of comparative example No.122, therefore orientation formation and crystallization particle diameter are poor.The content height of the C of comparative example No.123, therefore orientation formation and crystallization particle diameter are poor.The content height of the Ru of comparative example No.124, therefore orientation formation and crystallization particle diameter are poor.
The content of the Fe+Co of the comparative example No.189 of table 8 is low, so coercive force is poor.The content of the Fe+Co of comparative example No.190 is low, so coercive force is poor.The content of the Fe+Co of No.191 is low, so coercive force is poor.The content of the Fe+Co of No.192 is low, so coercive force is poor.The content of the Fe+Co of No.193 is low, so coercive force is poor.No.194 is in condition of the present invention, but the Cr addition is 4.9 not have to surpass 5, so characteristic is poor slightly.Therefore, with it as a reference example.
As previously discussed, discovery is in the Ni-Fe-Co-M alloy, by being limited in certain content, and by being limited in this zone, thereby has magnetic, and the magnetic permeability of (111) direction is uprised, by being that inculating crystal layer is given magnetic to Ni, thereby play the such excellent effect of distance that can shorten between magnetic head and the soft magnetism basilar memebrane.
The manufacturing of sputtering target material and evaluation
Next, the example of the manufacture method of sputtering target material is shown.The present invention's example No.2 according to table 1, No.10, No.14, No.18, the No.35 of No.25 and table 2, No.38, No.43, the No.51 of table 3, No.70, the No.79 of table 4, No.85, No.89, No.95, the No.102 of table 5, No.117, No.118, No122, the No.128 of table 6, No.135, No.144, the No.159 of table 7, No.170, No176, the No.188 of table 8, comparative example No.190, one-tenth shown in the comparative example No.193 is grouped into the weighing molten fuel, in the refractory crucible of gas atmosphere decompression Ar with after the fusing of molten fuel induction heating, nozzle tapping from the diameter 8mm of crucible bottom utilizes Ar gas to atomize.As the material powder of this gas atomization powder, fill it in the airtight container of diameter 250mm, length 100mm of carbon steel system, carry out the vacuum exhaust sealing.
No.2 for table 1, No.10, No.14, No.18, No.25, the No.51 of table 3, No.70,1000 ℃ of forming temperatures, forming pressure 147MPa, under 1 hour the condition of molding time above-mentioned powder is filled steel billet and carry out the HIP moulding, No.35 for table 2, No.38, No.43, the No.79 of table 4, No.85, No.89, No.95,1100 ℃ of forming temperatures, forming pressure 147MPa, under 3 hours the condition of molding time above-mentioned powder is filled steel billet and carry out the HIP moulding, No.102 for table 5, No.117, No.118, No.122, the No.128 of table 6, No.135, No.144, the No.159 of table 7, No.170, No176, the No.188 of table 8, comparative example No.190, comparative example No.193 is 950 ℃ of forming temperatures, forming pressure 147MPa, under 5 hours the condition of molding time above-mentioned powder is filled steel billet and carry out the HIP moulding.By line cutting, machined into, plane lapping etc. this HIP body is processed into the discoid of diameter 180mm, thickness 7mm, as sputtering target material.
Be grouped into the use sputtering target material for above-mentioned 27 kinds of one-tenth, on glass substrate, make the sputtered film film forming.X ray diffracting spectrum, the present invention's example No.2, No.10, No.14, No.18, No.25, No.35, No.38, No.43, No.51, No.70, No.79, No.85, No.89, No.95, No.128, No.135, No.144, No.159, No.170, No.176, No.186 all observe good orientation, and comparative example No.102, No.117, No.118, No.122 do not observe good orientation.
In addition, similarly carried out the mensuration of magnetic characteristic, the present invention as a result example No.2, No.10, No.14, No.18, No.25, No.35, No.38, No.43, No.51, No.70, No.79, No.85, No.89, No.95, No.128, No.135, No.144, No.159, No.170, No.176 with the chilling strip, No.186 all observes good magnetic characteristic, comparative example No.189, comparative example No.190, comparative example No.193 then do not observe good magnetic characteristic.For X ray diffracting spectrum, similarly measure with the chilling strip, its result with utilize coming to the same thing that the chilling strip estimates, be zero, △, *.Summarize to above, confirm that the result who utilizes the chilling strip to estimate has identical tendency with the evaluation of using sputtering target material to carry out the sputtered film of film forming.
Claims (12)
1. the inculating crystal layer alloy of a magnetic recording media, it contains:
Be selected from one or more the M1 element among W, Mo, Ta, Cr, V and the Nb, described M1 element is 2～20at% of described alloy;
Be selected from one or more the M2 element among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru, described M2 element is 0～10at% of described alloy;
As Ni, Fe and the Co of remainder, described Ni, Fe and Co are the ratio of Ni: Fe: Co=98～20: 0～50: 0～60 and Fe+Co 〉=1.5 in the at% with respect to the total amount of Ni+Fe+Co.
2. alloy according to claim 1 wherein, only is made of the M2 element of 0～10at% of the M1 element of 2～20at% of described alloy, described alloy, Ni, Fe as remainder and Co and unavoidable impurities.
3. the inculating crystal layer alloy of a magnetic recording media, it contains:
Be selected from one or more the M1 element among W, Mo, Ta, Cr, V and the Nb, described M1 element is 2～20at% of described alloy;
Be selected from one or more the M2 element among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru, described M2 element is 0～10at% of described alloy;
As Ni, Fe and the Co of remainder, described Ni, Fe and Co are the ratio of Ni: Fe: Co=98～20: 2～50: 0～60 in the at% with respect to the total amount of Ni+Fe+Co.
4. alloy according to claim 3 wherein, only is made of the M2 element of 0～10at% of the M1 element of 2～20at% of described alloy, described alloy, Ni, Fe as remainder and Co and unavoidable impurities.
5. alloy according to claim 1 and 2 wherein, contains and is selected among W and the Mo one or both.
6. according to claim 3 or 4 described alloys, wherein, contain and be selected among W and the Mo one or both.
7. alloy according to claim 1 and 2 wherein, contains and surpasses 5% Cr.
8. according to claim 3 or 4 described alloys, wherein, contain and surpass 5% Cr.
9. alloy according to claim 1 and 2, wherein, contain surpass 0% and 10at% following be selected among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru one or more.
10. according to claim 3 or 4 described alloys, wherein, contain surpass 0% and 10at% following be selected among Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C and the Ru one or more.
11. a sputtering target material, it comprises any described alloy in the claim 1～10.
12. a magnetic recording media, it possesses the inculating crystal layer that comprises any described alloy in the claim 1～10.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-259713 | 2010-11-22 | ||
| JP2010259713 | 2010-11-22 | ||
| JP2011094594A JP5726615B2 (en) | 2010-11-22 | 2011-04-21 | Alloy for seed layer of magnetic recording medium and sputtering target material |
| JP2011-094594 | 2011-04-21 | ||
| PCT/JP2011/076529 WO2012070464A1 (en) | 2010-11-22 | 2011-11-17 | Alloy for seed layer of magnetic recording medium, and sputtering target material |
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| CN103221999A true CN103221999A (en) | 2013-07-24 |
| CN103221999B CN103221999B (en) | 2016-10-19 |
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| CN201180055776.8A Active CN103221999B (en) | 2010-11-22 | 2011-11-17 | The inculating crystal layer alloy of magnetic recording media and sputtering target material |
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| Country | Link |
|---|---|
| JP (1) | JP5726615B2 (en) |
| CN (1) | CN103221999B (en) |
| MY (1) | MY159936A (en) |
| SG (1) | SG190358A1 (en) |
| TW (1) | TWI512113B (en) |
| WO (1) | WO2012070464A1 (en) |
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| CN103938030A (en) * | 2014-04-29 | 2014-07-23 | 王杨 | Method for preparing nickel-based soft magnetic material |
| CN104508167A (en) * | 2012-08-14 | 2015-04-08 | 山阳特殊制钢株式会社 | Fe-Co alloy sputtering target material and method for producing same, and soft magnetic thin film layer and perpendicular magnetic recording medium using same |
| CN104651788A (en) * | 2013-11-21 | 2015-05-27 | 安泰科技股份有限公司 | Ni-Fe-W alloy target and manufacturing method thereof |
| CN105420678A (en) * | 2014-09-15 | 2016-03-23 | 安泰科技股份有限公司 | Ni-W-added Al alloy target material and manufacturing method thereof |
| CN107251139A (en) * | 2015-01-09 | 2017-10-13 | 山阳特殊制钢株式会社 | The inculating crystal layer alloy and sputtering target material and magnetic recording media of Ni-Cu systems magnetic recording media |
| CN107250424A (en) * | 2015-02-09 | 2017-10-13 | 山阳特殊制钢株式会社 | The excellent Ni series target materials of sputtering |
| CN109790600A (en) * | 2016-09-27 | 2019-05-21 | 山阳特殊制钢株式会社 | NiTa system alloy, target and magnetic recording media |
| CN109074824B (en) * | 2016-04-13 | 2020-10-09 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium, sputtering target material, and magnetic recording medium |
| CN113811628A (en) * | 2019-06-19 | 2021-12-17 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium |
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| US9685184B1 (en) * | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
| SG11201707351RA (en) * | 2015-03-12 | 2017-10-30 | Sanyo Special Steel Co Ltd | Ni-BASED SPUTTERING TARGET MATERIAL AND MAGNETIC RECORDING MEDIUM |
| JP7157573B2 (en) * | 2018-07-04 | 2022-10-20 | 山陽特殊製鋼株式会社 | Ni-based alloy for seed layer of magnetic recording media |
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- 2011-11-17 WO PCT/JP2011/076529 patent/WO2012070464A1/en active Application Filing
- 2011-11-17 MY MYPI2013700827A patent/MY159936A/en unknown
- 2011-11-17 CN CN201180055776.8A patent/CN103221999B/en active Active
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| TW200741670A (en) * | 2006-04-27 | 2007-11-01 | Heraeus Inc | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
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| CN104508167A (en) * | 2012-08-14 | 2015-04-08 | 山阳特殊制钢株式会社 | Fe-Co alloy sputtering target material and method for producing same, and soft magnetic thin film layer and perpendicular magnetic recording medium using same |
| CN104651788A (en) * | 2013-11-21 | 2015-05-27 | 安泰科技股份有限公司 | Ni-Fe-W alloy target and manufacturing method thereof |
| CN104651788B (en) * | 2013-11-21 | 2017-03-15 | 安泰科技股份有限公司 | Ni Fe W alloys targets and its manufacture method |
| CN103938030B (en) * | 2014-04-29 | 2015-12-09 | 深圳市天瑞科技有限公司 | A kind of preparation method of Ni-based soft magnetic materials |
| CN103938030A (en) * | 2014-04-29 | 2014-07-23 | 王杨 | Method for preparing nickel-based soft magnetic material |
| CN105420678B (en) * | 2014-09-15 | 2018-03-09 | 安泰科技股份有限公司 | A kind of Al addition Ni W alloys targets and its manufacture method |
| CN105420678A (en) * | 2014-09-15 | 2016-03-23 | 安泰科技股份有限公司 | Ni-W-added Al alloy target material and manufacturing method thereof |
| CN107251139A (en) * | 2015-01-09 | 2017-10-13 | 山阳特殊制钢株式会社 | The inculating crystal layer alloy and sputtering target material and magnetic recording media of Ni-Cu systems magnetic recording media |
| CN107251139B (en) * | 2015-01-09 | 2020-04-14 | 山阳特殊制钢株式会社 | Alloy for seed layer of Ni-Cu magnetic recording medium, sputtering target material, and magnetic recording medium |
| CN107250424A (en) * | 2015-02-09 | 2017-10-13 | 山阳特殊制钢株式会社 | The excellent Ni series target materials of sputtering |
| CN109074824B (en) * | 2016-04-13 | 2020-10-09 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium, sputtering target material, and magnetic recording medium |
| CN109790600A (en) * | 2016-09-27 | 2019-05-21 | 山阳特殊制钢株式会社 | NiTa system alloy, target and magnetic recording media |
| CN113811628A (en) * | 2019-06-19 | 2021-12-17 | 山阳特殊制钢株式会社 | Alloy for seed layer of magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| MY159936A (en) | 2017-02-15 |
| TWI512113B (en) | 2015-12-11 |
| WO2012070464A1 (en) | 2012-05-31 |
| SG190358A1 (en) | 2013-06-28 |
| CN103221999B (en) | 2016-10-19 |
| TW201233814A (en) | 2012-08-16 |
| JP5726615B2 (en) | 2015-06-03 |
| JP2012128933A (en) | 2012-07-05 |
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