TW201437386A - Cofe system alloy for soft magnetic film layers in perpendicular magnetic recording media, and sputtering target material - Google Patents
Cofe system alloy for soft magnetic film layers in perpendicular magnetic recording media, and sputtering target material Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 28
- 239000000956 alloy Substances 0.000 title claims abstract description 28
- 238000005477 sputtering target Methods 0.000 title claims abstract description 9
- 239000013077 target material Substances 0.000 title claims abstract 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 13
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 11
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 11
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 11
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 9
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910003321 CoFe Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 1
- 229910052747 lanthanoid Inorganic materials 0.000 abstract 1
- 150000002602 lanthanoids Chemical class 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 35
- 230000007797 corrosion Effects 0.000 description 35
- 238000002474 experimental method Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 238000010828 elution Methods 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 230000000996 additive effect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910001004 magnetic alloy Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/003—Making ferrous alloys making amorphous alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/04—Amorphous alloys with nickel or cobalt as the major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Abstract
Description
本申請案係基於2013年2月18日所申請之日本專利申請2013-28726號而主張優先權，其全部揭示內容係藉由參考而納入本說明書中。 The present application claims priority based on Japanese Patent Application No. 2013-28726, filed on Jan.
本發明係關於一種垂直磁性記錄媒體軟磁性薄膜層用CoFe系合金及濺鍍靶材。 The present invention relates to a CoFe-based alloy for a soft magnetic film layer for a perpendicular magnetic recording medium and a sputtering target.
近年來，磁性記錄技術的進步顯著，為了磁碟裝置之大容量化，而發展磁性記錄媒體的高記錄密度化，因此可實現比以往普及的面內磁性記錄媒體更高記錄密度之垂直磁性記錄方式逐漸實用化。 In recent years, advances in magnetic recording technology have been remarkable, and in order to increase the capacity of magnetic disk devices, high recording density of magnetic recording media has been developed, so that vertical magnetic recording with higher recording density than conventional in-plane magnetic recording media can be realized. The way is gradually becoming practical.
垂直磁性記錄方式，係指以相對於垂直磁性記錄媒體的磁性膜中之媒體面易磁化軸配向於垂直方向的方式形成者，且適於高記錄密度的方法。接著，於垂直磁性記錄方式中，係開發有一種具有將記錄感度提高之磁性 記錄膜層與軟磁性膜層之2層記錄媒體。此磁性記錄膜層，一般係使用有CoCrPt-SiO2系合金。此外，亦研究出可實現更高的記錄密度之熱輔助或微波輔助方式的垂直磁性記錄媒體。 The perpendicular magnetic recording method is a method of forming a pattern in which the medium surface easy magnetization axis in the magnetic film of the perpendicular magnetic recording medium is aligned in the vertical direction, and is suitable for a high recording density. Next, in the perpendicular magnetic recording method, a two-layer recording medium having a magnetic recording film layer and a soft magnetic film layer which improve recording sensitivity is developed. As the magnetic recording film layer, a CoCrPt-SiO 2 -based alloy is generally used. In addition, a perpendicular magnetic recording medium capable of achieving a higher recording density in a heat assisted or microwave assisted manner has also been developed.
另一方面，對於以往之軟磁性膜層，係需要高飽和磁束密度(以下，記載為Bs)與非晶質性，進而依據垂直磁性記錄媒體的用途或使用環境，而附加要求高耐蝕性、高硬度等各種特性。例如，如同日本特開2008-299905號公報(專利文獻1)所提案般，藉由添加Fe而得到高Bs，且藉由添加B而得到高硬度。此外，如同日本特開2011-68985號公報(專利文獻2)所提案般，藉由添加Y或Ti而改善耐蝕性(耐候性)。 On the other hand, the conventional soft magnetic film layer requires a high saturation magnetic flux density (hereinafter referred to as Bs) and amorphous properties, and further requires high corrosion resistance depending on the use or use environment of the perpendicular magnetic recording medium. Various properties such as high hardness. For example, as proposed in JP-A-2008-299905 (Patent Document 1), high Bs is obtained by adding Fe, and high hardness is obtained by adding B. In addition, as proposed in JP-A-2011-68985 (Patent Document 2), corrosion resistance (weather resistance) is improved by adding Y or Ti.
此外，近年來，藉由改良磁碟裝置中之讀寫頭、或調整軟磁性合金的磁束密度使軟磁性膜與Ru膜之交換耦合磁場最適化，而使以比以往更低的磁束之寫入成為可能。因而，配置於記錄層的下方之軟磁性層，係使用比較低Bs之非晶質合金，而非以往之高Bs者。 Further, in recent years, by modifying the magnetic head density in the magnetic disk device or adjusting the magnetic flux density of the soft magnetic alloy, the exchange coupling magnetic field between the soft magnetic film and the Ru film is optimized, and the magnetic flux writing is performed lower than ever. Entry is possible. Therefore, the soft magnetic layer disposed under the recording layer is made of an amorphous alloy having a relatively low Bs, instead of the conventional high Bs.
如此一來，若使用低Bs合金作為垂直磁性記錄媒體的軟磁性層，則軟磁性膜中之記錄磁化不會過度地對周圍造成磁性的影響，結果能夠記錄於小的空間。此現象，係被認為因「超出寫入範圍」的減低而改善外觀上之記錄密度。然而，仍然需要確保最低限的Bs。因此，較理想為具有約0.95~1.35T程度之飽和磁束密度者。 As a result, when a low-Bs alloy is used as the soft magnetic layer of the perpendicular magnetic recording medium, the recording magnetization in the soft magnetic film does not excessively affect the magnetic properties of the surroundings, and as a result, it can be recorded in a small space. This phenomenon is considered to improve the apparent recording density due to the reduction of "exceeding the writing range". However, there is still a need to ensure a minimum Bs. Therefore, it is preferable to have a saturation magnetic flux density of about 0.95 to 1.35 T.
進而，近年來，以極度縮小磁碟內之記錄層 與頭的距離，且在來自更低的頭之磁場能夠著磁的方式進行改良。在此，以為了縮短記錄層與頭之距離，而極力減薄配置於記錄層上的碳保護膜者較為理想。然而，若使此碳保護膜變薄，則有因大氣中的氧透過，而導致下部的層氧化之問題發生的可能性。 Furthermore, in recent years, the recording layer in the disk has been extremely reduced. The distance from the head is improved in such a way that the magnetic field from the lower head can be magnetized. Here, in order to shorten the distance between the recording layer and the head, it is preferable to reduce the thickness of the carbon protective film disposed on the recording layer as much as possible. However, if this carbon protective film is made thin, there is a possibility that the problem of oxidation of the lower layer occurs due to the permeation of oxygen in the atmosphere.
此外，於磁碟內之多層結構中，由於較多情況中，軟磁性膜之耐蝕性最低，因此保護此層一事乃成為控制速度的要因，而決定必要的碳保護膜之厚度。因而，若能夠使軟磁性膜之耐蝕性較以往更高，則可將碳保護膜減薄，結果，可縮短記錄層與頭之距離，並可連帶提昇記錄容量。 Further, in the multilayer structure in the magnetic disk, since the soft magnetic film has the lowest corrosion resistance in many cases, the protection of the layer becomes a factor of controlling the speed, and the thickness of the necessary carbon protective film is determined. Therefore, if the corrosion resistance of the soft magnetic film can be made higher than in the past, the carbon protective film can be thinned, and as a result, the distance between the recording layer and the head can be shortened, and the recording capacity can be increased.
如此一來，並非考慮如以往一般具有在通常的環境不會生鏽之最低限的耐蝕性，近年來，於軟磁性層具有即使在更嚴苛的環境亦不生鏽之顯著且優異的耐蝕性乃逐漸變得重要。因而，為了得到如此顯著且高耐蝕性，若使用以往所探討過的耐蝕性改善元素則添加量會變得過多，結果，變得難以確保最低限的Bs。基於如此之背景，發明者探討出使Bs之降低幅度縮小，且可得到大的耐蝕性改善效果之新穎的添加元素。 In this way, it is not considered that there is a minimum corrosion resistance which does not rust in a normal environment as in the past, and in recent years, the soft magnetic layer has remarkable and excellent corrosion resistance without rust even in a more severe environment. Sex is gradually becoming important. Therefore, in order to obtain such remarkable and high corrosion resistance, if the corrosion resistance improving element which has been conventionally studied is used, the amount of addition is excessive, and as a result, it is difficult to secure the minimum Bs. Based on such a background, the inventors have explored novel additive elements that reduce the reduction in Bs and that have a large effect of improving corrosion resistance.
[專利文獻1]日本特開2008-299905號公報 [Patent Document 1] JP-A-2008-299905
[專利文獻2]日本特開2011-68985號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-68985
於上述之專利文獻1中，係就藉由於合金中添加Fe而得到高Bs，且藉由添加B而得到高硬度的觀點而言為優異。但，此等方法，就得到即使於更嚴苛的環境亦不生鏽之耐蝕性優異的垂直磁性記錄媒體用軟磁性合金方面並不充分。此外，於專利文獻2中，藉由添加Y或Ti而改善合金之耐蝕性(耐候性)。但，此等添加元素，係就得到Bs之降低幅度大，且大的耐蝕性改善效果方面並不充分。 In the above-mentioned Patent Document 1, it is excellent in that high Bs is obtained by adding Fe to the alloy, and high hardness is obtained by adding B. However, these methods are not sufficient for obtaining a soft magnetic alloy for a perpendicular magnetic recording medium which is excellent in corrosion resistance even in a more severe environment. Further, in Patent Document 2, the corrosion resistance (weather resistance) of the alloy is improved by adding Y or Ti. However, such an additive element has a large reduction in Bs and a large improvement in corrosion resistance.
為了解決如此之問題，發明者們係針對各種添加元素對於軟磁性用非晶質合金之耐蝕性與其他特性所造成的影響進行努力探討。其結果，發現藉由少量添加從Ge、Ru、Rh、Pd、Re、Os、Ir及Pt所選出的1種以上，而不會使Bs明顯地降低，且可大幅改善耐蝕性，因而完成本發明。 In order to solve such a problem, the inventors have made an effort to investigate the influence of various additive elements on the corrosion resistance and other characteristics of the amorphous alloy for soft magnetic properties. As a result, it was found that one or more selected from Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt were added in a small amount, and Bs was not significantly lowered, and corrosion resistance was greatly improved, thereby completing the present invention. invention.
進而，發明者們，嶄新發現雖於垂直磁性記錄媒體所使用的軟磁性非晶質薄膜中，Ti、Zr、Hf、V、Nb、Ta、Cr、Mo及W等自以往即被認為是耐蝕性改善元素，但從Ge、Ru、Rh、Pd、Re、Os、Ir及Pt所選出的1種以上之少量添加，相對於以往所使用的元素，對於Bs之下降的幅度之耐蝕性改善效果顯著，因而完成本發明。因而，本發明之目的係提供一種耐蝕性優異的垂直磁性記錄媒體用軟磁性合金，及提供用以製作此合金之薄膜的濺 鍍靶材。 Further, the inventors have found that Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W have been considered to be corrosion resistant from the past in soft magnetic amorphous films used in perpendicular magnetic recording media. The improvement element, but a small amount of one or more selected from Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt, and the improvement of the corrosion resistance of the range of the decrease of Bs with respect to the element used conventionally Significantly, the present invention has thus been completed. Accordingly, it is an object of the present invention to provide a soft magnetic alloy for a perpendicular magnetic recording medium excellent in corrosion resistance, and a splash for providing a film for forming the alloy Plating target.
依據本發明之一樣態，可提供一種合金，其係垂直磁性記錄媒體軟磁性膜層用合金，該合金係由從Ge、Ru、Rh、Pd、Re、Os、Ir及Pt中所選出的1種以上、從Sc、Y、鑭(原子編號57~71)、Ti、Zr、Hf、V、Nb、Ta、Mo、W及B中所選出的1種以上、剩餘部分Co及Fe以及不可避免的雜質所構成，且以原子%計，完全滿足下述式(a)~(d)：(a)0.1%≦TCR≦10% According to the state of the present invention, an alloy which is an alloy for a soft magnetic film layer of a perpendicular magnetic recording medium selected from Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt can be provided. One or more selected from the group consisting of Sc, Y, yttrium (atomic number 57 to 71), Ti, Zr, Hf, V, Nb, Ta, Mo, W, and B, and the remainder Co and Fe are inevitable The impurities are composed, and in terms of atomic %, fully satisfy the following formulas (a) to (d): (a) 0.1% ≦ TCR ≦ 10%
(b)5%≦TAM≦25% (b) 5% ≦ TAM ≦ 25%
(c)13%≦TCR/2+TAM+TNM≦25% (c) 13% ≦ TCR / 2 + TAM + TNM ≦ 25%
(d)0≦Fe%/(Fe%+Co%)≦0.80 (d) 0≦Fe%/(Fe%+Co%)≦0.80
[式中、TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os%+Ir%+Pt% [wherein, TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os%+Ir%+Pt%
TAM=Sc%+Y%+鑭之合計%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2、及TNM=C%+Al%+Si%+P%+Cr%+Mn%+Ni%/3+Cu%/3+Zn%+Ga%+Sn%]。 TAM=Sc%+Y%+镧%%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2, and TNM=C%+Al% +Si%+P%+Cr%+Mn%+Ni%/3+Cu%/3+Zn%+Ga%+Sn%].
依據本發明之另一樣態，可提供一種垂直磁性記錄媒體軟磁性膜層用合金，其特徵為，以原子%計，由Ge、Ru、Rh、Pd、Re、Os、Ir、Pt為1種以上、 Sc、Y、鑭(原子編號57~71)、Ti、Zr、Hf、V、Nb、Ta、Mo、W、B為1種以上、剩餘部分Co、Fe以及不可避免的雜質所構成，且完全滿足下述式(1)~(4)。 According to another aspect of the present invention, there is provided an alloy for a soft magnetic film layer for a perpendicular magnetic recording medium, which is characterized by having one of Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt in atomic %. the above, Sc, Y, yttrium (atomic number 57 to 71), Ti, Zr, Hf, V, Nb, Ta, Mo, W, and B are one or more types, and the remaining portions of Co, Fe, and unavoidable impurities are formed, and are completely The following formulas (1) to (4) are satisfied.
(1)0.1%≦TCR≦10% (1) 0.1% ≦ TCR ≦ 10%
(2)5%≦TAM≦25% (2)5% ≦TAM≦25%
(3)13%≦TCR/2+TAM+TNM≦25% (3) 13% ≦ TCR / 2 + TAM + TNM ≦ 25%
(4)0≦Fe%/(Fe%+Co%)≦0.80 (4) 0≦Fe%/(Fe%+Co%)≦0.80
但，TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os%+Ir%+Pt% However, TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os%+Ir%+Pt%
TAM=Sc%+Y%+鑭之合計%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2 TAM=Sc%+Y%+镧%%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2
B係非晶質促進效果為其他元素的約2倍，故使用1/2。 Since the B-type amorphous promoting effect is about twice as large as other elements, 1/2 is used.
TNM=C%+Al%+Si%+P%+Cr%+Mn%+Ni%/3+Cu%/3+Zn%+Ga%+Sn% TNM=C%+Al%+Si%+P%+Cr%+Mn%+Ni%/3+Cu%/3+Zn%+Ga%+Sn%
Ni、Cu係飽和磁束密度的降低為其他元素的約1/3，故使用1/3。 The decrease in the saturation magnetic flux density of Ni and Cu is about 1/3 of that of other elements, so 1/3 is used.
依據本發明之較佳的樣態，可提供進一步含有從C、Al、Si、P、Cr、Mn、Ni、Cu、Zn、Ga及Sn所選出的1種以上之上述合金。 According to a preferred embodiment of the present invention, one or more of the above alloys selected from C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, and Sn may be further provided.
依據本發明之其他較佳的樣態，可提供由上述合金所構成的濺鍍靶材。 According to other preferred aspects of the present invention, a sputtering target composed of the above alloy can be provided.
如以上陳述般，本發明係可提供特別是耐熱性優異的垂直磁性記錄媒體用軟磁性合金、及用以製作此 合金的薄膜的濺鍍靶材之發揮極為優異的效果者。 As described above, the present invention provides a soft magnetic alloy for a perpendicular magnetic recording medium which is excellent in heat resistance, and is used for producing the same. The sputtering target of the alloy film exhibits an extremely excellent effect.
[第1圖]係顯示針對添加元素的種類對於Bs與溶出量所造成的影響之圖。 [Fig. 1] A graph showing the influence of the type of the added element on the amount of Bs and the amount of elution.
[第2圖]係顯示針對添加元素量的種類對於溶出量所造成的影響之圖。 [Fig. 2] A graph showing the influence of the type of the added element amount on the elution amount.
[第3圖]係顯示添加量與溶出量與Bs的關係之圖。 [Fig. 3] is a graph showing the relationship between the amount of addition and the amount of elution and Bs.
以下，具體地說明本發明。只要無特別的說明，則於本說明書中「%」係意味著原子%。 Hereinafter, the present invention will be specifically described. Unless otherwise stated, "%" in this specification means atomic %.
本發明之垂直磁性記錄媒體軟磁性膜層用合金，係由從Ge、Ru、Rh、Pd、Re、Os、Ir及Pt中所選出的1種以上、從Sc、Y、鑭(原子編號57~71)、Ti、Zr、Hf、V、Nb、Ta、Mo、W及B中所選出的1種以上、剩餘部分Co及Fe以及不可避免的雜質所構成(comprising)，較佳為由此等元素及不可避免的雜質所實質構成(consisting essentially of)，更佳為僅由此等元素及不可避免的雜質所構成(consisting of)。 The alloy for a soft magnetic film layer of a perpendicular magnetic recording medium of the present invention is one or more selected from the group consisting of Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt, and is derived from Sc, Y, and 镧 (Atom No. 57 ~71), one or more selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mo, W, and B, and the remainder Co and Fe and the unavoidable impurities are preferably included. The istingting essentially of the elements and the unavoidable impurities, and more preferably consisting of only such elements and unavoidable impurities.
上述式中，TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os% +Ir%+Pt%。於本發明之從Ge、Ru、Rh、Pd、Re、Os、Ir及Pt所選出的1種以上，係不會使Bs明顯降低，且使耐蝕性大幅增加的必須元素，其添加量的合計低於0.1%時並無法看見耐蝕性改善的效果，若超過10%則導致Bs降低為必要以上。此外，會導致高成本。此等元素的添加量，較佳為0.5~7%，更佳為1~5%。此外，元素的種類，較佳為Ge以外者，更佳為Ru、Rh及Pt。 In the above formula, TCR=Ge%+Ru%+Rh%+Pd%+Re%+Os% +Ir%+Pt%. One or more selected from Ge, Ru, Rh, Pd, Re, Os, Ir, and Pt of the present invention are essential elements which do not significantly lower Bs and which greatly increase the corrosion resistance, and the total amount of addition thereof When the amount is less than 0.1%, the effect of improving the corrosion resistance is not observed, and if it exceeds 10%, the Bs is lowered more than necessary. In addition, it leads to high costs. The amount of these elements added is preferably from 0.5 to 7%, more preferably from 1 to 5%. Further, the type of the element is preferably other than Ge, and more preferably Ru, Rh and Pt.
上述式中，TAM=Sc%+Y%+鑭之合計%+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2。在此，B係非晶質促進效果為其他元素的約2倍，故使用1/2。於本發明之從Sc、Y、鑭(原子編號57~71)、Ti、Zr、Hf、V、Nb、Ta、Mo、W及B中所選出的1種以上，係用以提高非晶質性之必須的元素，其添加量的合計低於5%時係無法得到充分的非晶質性，若超過25%則導致Bs降低為必要以上。此等元素的添加量，較佳為10~23%，更佳為15~20%。 In the above formula, TAM=Sc%+Y%+镧% of total+Ti%+Zr%+Hf%+V%+Nb%+Ta%+Mo%+W%+B%/2. Here, since the B-based amorphous promoting effect is about twice as large as other elements, 1/2 is used. One or more selected from Sc, Y, yttrium (atomic number 57 to 71), Ti, Zr, Hf, V, Nb, Ta, Mo, W, and B in the present invention are used to improve amorphous When the total amount of the elements to be added is less than 5%, sufficient amorphous properties are not obtained, and if it exceeds 25%, Bs is required to be lowered or more. The amount of these elements added is preferably from 10 to 23%, more preferably from 15 to 20%.
上述式中，TNM=C%+Al%+Si%+P%+Cr%+Mn%+Ni%/3+Cu%/3+Zn%+Ga%+Sn%。在此，Ni、Cu係飽和磁束密度的降低為其他元素的約1/3，故使用1/3。TCR、TAM及TNM所屬的元素中任一者皆為使Bs降低的元 素。因而，有規定該合計量的必要。TCR/2+TAM+TNM低於13%，則Bs會過高，而導致近年來磁碟所需之軟磁性膜的Bs變得更大，若超過25%則無法得到充分的Bs。此等元素的添加量，較佳為15~23%，更佳為17~20%。 In the above formula, TNM = C% + Al% + Si% + P% + Cr% + Mn% + Ni% / 3 + Cu% / 3 + Zn% + Ga% + Sn%. Here, the decrease in the saturation magnetic flux density of Ni and Cu is about 1/3 of that of other elements, so 1/3 is used. Any one of the elements to which TCR, TAM, and TNM belong is a element that lowers Bs. Prime. Therefore, there is a need to stipulate the total amount. When the TCR/2+TAM+TNM is less than 13%, the Bs is too high, and the Bs of the soft magnetic film required for the magnetic disk becomes larger in recent years, and if it exceeds 25%, sufficient Bs cannot be obtained. The amount of these elements added is preferably 15 to 23%, more preferably 17 to 20%.
本發明之Co及Fe雖為用以具有強磁性的必須元素，但若Fe%/(Fe%+Co%)超過0.80，則居禮點(Curie point)會明顯降低，而在室溫無法得到充分的Bs。此比率，較佳為0.30~0.70，更佳為0.40~0.65。 Although Co and Fe of the present invention are essential elements for having strong magnetism, if Fe%/(Fe%+Co%) exceeds 0.80, the Curie point is remarkably lowered, and it is not obtained at room temperature. Full Bs. This ratio is preferably from 0.30 to 0.70, more preferably from 0.40 to 0.65.
以下，針對本發明藉由實施例進行具體地說明。 Hereinafter, the present invention will be specifically described by way of examples.
通常，垂直磁性記錄媒體軟磁性膜層，係將與其成分相同成分的濺鍍靶材進行濺鍍，於玻璃基板等之上成膜而得到。在此，藉由濺鍍所成膜的薄膜係進行急冷。基於此觀點，於以下所示之實驗A及B中，供試材，係使用以單輥式之液體急冷裝置所製作出的急冷薄帶。此乃將實際藉由濺鍍急冷而成膜的薄膜之對成分之各特性的影響，藉由簡易的液體急冷薄帶進行評估者。 In general, a perpendicular magnetic recording medium soft magnetic film layer is obtained by sputtering a sputtering target having the same composition as that of a component, and forming a film on a glass substrate or the like. Here, the film formed by sputtering is rapidly cooled. Based on this point of view, in the experiments A and B shown below, the test material was a quenched ribbon produced by a single-roller liquid quenching apparatus. This is an evaluation of the characteristics of the components of the film which is actually formed by sputtering and quenching, and is evaluated by a simple liquid quenched ribbon.
接著，實驗C方面，係針對實際製作濺鍍靶材，並將此進行濺鍍所製作出的薄膜進行評估。 Next, in the case of Experiment C, the film produced by sputtering the target was actually evaluated, and the film produced by this sputtering was evaluated.
利用直徑10mm×長度40mm左右之水冷銅鑄模，在減壓Ar中電弧溶解對於特定成分秤量出30g之原料，製成用以製作急冷薄帶的溶解母材。急冷薄帶之製作條件，係以單輥方式，於直徑15mm之石英管中，設置此溶解母材，將熔出噴嘴徑設為1mm，環境氣壓61kPa，以噴霧差壓69kPa，銅輥(直徑300mm)之旋轉數3000rpm，銅輥與熔出噴嘴之間隙0.3mm進行熔出。熔出溫度係各溶解母材剛溶解後。將如此方式所製作出的急冷薄帶設為供試材，評估飽和磁束密度(以下記載為Bs)與非晶質性。另外，計算Bs時之試料的體積，係依據由以電子天秤所測量出的重量與組成比所計算出的平均比重來計算。平均比重，係將作為構成試料的元素之純物質的比重以組成比率平均者。 A water-cooled copper mold having a diameter of 10 mm and a length of about 40 mm was used, and 30 g of a raw material was weighed and dissolved in a decompressing Ar for a specific component to prepare a dissolved base material for producing a quenched ribbon. The production conditions of the quenched ribbon are set in a single-roller method in a quartz tube having a diameter of 15 mm, and the molten base material is set to have a melting nozzle diameter of 1 mm, an ambient air pressure of 61 kPa, a spray differential pressure of 69 kPa, and a copper roller (diameter). The rotation number of 300 mm) was 3000 rpm, and the gap between the copper roll and the melt nozzle was 0.3 mm. The melting temperature is after each dissolved base material is dissolved. The quenched ribbon produced in this manner was used as a test material, and the saturation magnetic flux density (hereinafter referred to as Bs) and amorphous property were evaluated. In addition, the volume of the sample at the time of calculating Bs was calculated based on the average specific gravity calculated from the weight and composition ratio measured by the electronic balance. The average specific gravity is the average of the composition ratios of the pure substances which are the elements constituting the sample.
以VSM裝置(振動試料型磁力計)，以施加磁場1200kA/m測量室溫的Bs。 The room temperature Bs was measured with a VSM apparatus (vibration sample type magnetometer) with an applied magnetic field of 1200 kA/m.
通常，若測量非晶質材料的X射線繞射圖型，則並未觀察到繞射峰值，而成為非晶質特有之光暈圖型。此外，非完全的非晶質時，雖觀察到繞射峰值，但與結晶材料相比較，峰值高度會變低，且亦觀察到光暈圖型。因此，利 用下述的方法來評估非晶質性。 In general, when an X-ray diffraction pattern of an amorphous material is measured, no diffraction peak is observed, and an amorphous specific halo pattern is obtained. Further, in the case of incomplete amorphous, although a diffraction peak was observed, the peak height was lowered as compared with the crystalline material, and a halo pattern was also observed. Therefore, profit The amorphousness was evaluated by the following method.
於玻璃板以雙面膠帶貼附供試材，以X射線繞射裝置得到繞射圖型。此時，測量面係以成為急冷薄帶之銅輥接觸面的方式將供試材貼附於玻璃板。X繞射源係以Cu-K α線，且掃描速率4°/min進行測量。將於此繞射圖型可確認光暈圖型者作為○，並將完全未觀察到光暈圖型者作為×，而製成非晶質性的評估。 The test piece was attached to the glass plate with a double-sided tape, and a diffraction pattern was obtained by an X-ray diffraction device. At this time, the measurement surface was attached to the glass plate so that the contact surface of the copper roll of the quenched ribbon was attached. The X-diffraction source was measured with a Cu-K? line and a scan rate of 4[deg.]/min. In this diffraction pattern, it was confirmed that the halo pattern was ○, and the halo pattern was not observed at all, and the amorphous property was evaluated.
秤量50mg急冷薄帶，浸漬於3質量%之硝酸溶液10ml 60min。其後，藉由ICP法測量Fe及Co離子之溶出量。另外，於溶出量的評估中，使用將Fe與Co之溶出離子的合計量除以經試驗的急冷薄帶之重量，並換算為ppm的值。 A 50 mg quenched ribbon was weighed and immersed in a 3 mass% nitric acid solution 10 ml for 60 min. Thereafter, the elution amounts of Fe and Co ions were measured by the ICP method. Further, in the evaluation of the elution amount, the total amount of the eluted ions of Fe and Co was divided by the weight of the tested quenched ribbon, and converted into a value of ppm.
在耐火物坩堝中，在減壓Ar下誘導溶解對於特定成分秤量出5kg之母材後，使其凝固。坩堝的尺寸為直徑120mm、高度150mm。由此鑄塊的下部，以車床加工、線切割加工、平面研磨加工，製作出直徑95mm、厚度2mm之濺渡靶材。 In the refractory crucible, a base material of 5 kg was weighed and dissolved for a specific component under a reduced pressure Ar, and then solidified. The size of the crucible is 120 mm in diameter and 150 mm in height. From the lower part of the ingot, a sputter target having a diameter of 95 mm and a thickness of 2 mm was produced by lathe machining, wire cutting processing, and surface grinding processing.
以1×10-4Pa以下將腔內進行真空排氣，0.6Pa投入純 度99.99%之Ar氣體，進行濺鍍。薄膜，以500nm厚度於厚度1mm的玻璃基板上生成。針對此薄膜試料，與急冷薄帶相同地評估Bs及非晶質性。另外，計算Bs時之試料的體積，係依據由以薄膜試料的面積與TEM裝置所觀察出的薄膜厚度來計算。 The inside of the chamber was evacuated at 1 × 10 -4 Pa or less, and Ar gas having a purity of 99.99% was introduced at 0.6 Pa to perform sputtering. The film was formed on a glass substrate having a thickness of 500 nm and a thickness of 1 mm. For this film sample, Bs and amorphous properties were evaluated in the same manner as the quenched ribbon. Further, the volume of the sample at the time of calculating Bs was calculated based on the thickness of the film observed from the area of the film sample and the TEM device.
將製作出的濺鍍膜裁切成各玻璃板10×25mm，浸漬於10質量%之硝酸溶液10ml 60min。其後，藉由ICP法測量Fe及Co離子之溶出量。另外，於溶出量的評估中，使用將Fe與Co之溶出離子的合計量除以試驗所使用的水溶液之容積，並換算為mg/l的值。 The produced sputter film was cut into 10 x 25 mm of each glass plate, and immersed in 10 ml of a 10 mass% nitric acid solution for 60 min. Thereafter, the elution amounts of Fe and Co ions were measured by the ICP method. Further, in the evaluation of the elution amount, the total amount of the eluted ions of Fe and Co was divided by the volume of the aqueous solution used for the test, and converted into a value of mg/l.
首先，最初，為了探討添加元素的種類對於Bs及耐蝕性的影響，將(Co50Fe50)78-Zr8-B6-M8(M=添加元素)設為基本組成，評估出添加了各種添加元素的急冷帶(實驗A)。接著，選擇Ge、Ru及Pt作為TCR所屬之元素的代表，選擇Ti、Hf及W作為比較，藉由改變添加量的急冷帶，針對此等元素的添加量對於Bs及耐蝕性所造成的影響進行評估(實驗B)。最後，為了評估各種元素的影響，藉由濺鍍膜評估Bs、耐蝕性及非晶質性(實驗C)。 First, at the beginning, in order to investigate the influence of the type of the added element on Bs and corrosion resistance, (Co 50 Fe 50 ) 78 -Zr 8 -B 6 -M 8 (M=addition element) was set as the basic composition, and it was evaluated that it was added. Quenching zone with various added elements (Experiment A). Next, Ge, Ru, and Pt are selected as representatives of the elements to which the TCR belongs, and Ti, Hf, and W are selected as comparisons, and the influence of the addition amount of these elements on Bs and corrosion resistance is changed by changing the amount of quenching band added. Conduct an evaluation (Experiment B). Finally, in order to evaluate the influence of various elements, Bs, corrosion resistance, and amorphousness were evaluated by a sputtering film (Experiment C).
於實驗A中，表1顯示將(Co50Fe50)78-Zr8-B6-M8(M=添加元素)設為基本組成的添加元素種類之影響(添加量為一定的評估)。亦即，表1係顯示關於添加了各種元素的急冷薄帶之各特性。另外，無添加者之組成為(Co50Fe50)86-Zr8-B6，表1的成分之Fe%/(Fe%+Co%)皆為0.50。 In Experiment A, Table 1 shows the influence of the addition type of (Co 50 Fe 50 ) 78 -Zr 8 -B 6 -M 8 (M = added element) as a basic composition (the amount of addition is a certain evaluation). That is, Table 1 shows the characteristics of the quenched ribbon with the addition of various elements. Further, the composition without addition was (Co 50 Fe 50 ) 86 -Zr 8 -B 6 , and the Fe%/(Fe%+Co%) of the components of Table 1 was 0.50.
此外，第1圖顯示將表1之Bs與溶出量製圖而成的圖。第1圖係顯示添加元素種類對於Bs與溶出量所造成的影響(實驗A)。依據第1圖，溶出量低且具有高耐蝕性的添加元素當中，Ru、Rh、Pd、Re、Os、Ir及Pt係可確保較高的Bs。此外，Ge亦顯示出與Ti及Hf相同程度的效果。另一方面，V、Nb、Ta、Cr、Mo及W雖 溶出量少，但Bs降低幅度大。進而，其他的添加元素係耐蝕性改善的效果小。另外，於使添加元素之添加量為一定的實驗A中，雖添加有Ti者及添加有Hf者與添加有Ge者顯示出同等的效果，但於改變後述之添加量的實驗B中，無法得到添加有Ge者程度的效果，因此，Ti及Hf係從TCR所屬之元素排除。 In addition, Fig. 1 shows a graph in which Bs and the amount of elution in Table 1 are plotted. Fig. 1 shows the effect of the added element type on Bs and the amount of dissolution (Experiment A). According to Fig. 1, among the additive elements having a low elution amount and high corrosion resistance, Ru, Rh, Pd, Re, Os, Ir, and Pt ensure high Bs. In addition, Ge also exhibits the same effect as Ti and Hf. On the other hand, although V, Nb, Ta, Cr, Mo, and W The amount of dissolution is small, but the decrease in Bs is large. Further, other additive elements have a small effect of improving corrosion resistance. In addition, in Experiment A in which the amount of addition of the additive element was constant, the addition of Ti and the addition of Hf showed the same effect as the addition of Ge, but in Experiment B in which the amount of addition described later could not be changed, The effect of adding Ge is obtained, and therefore Ti and Hf are excluded from the elements to which the TCR belongs.
接著，表2顯示將實驗B(Co35Fe65)(76-x)-Ta8-B8-Mn8-Mx(M=添加元素)設為基本組成的添加元素量之影響。此表2係顯示出改變添加元素的添加量之急冷薄帶的各特性。另外，無添加者的組成係(Co35Fe65)76-Ta8-B8-Mn8。 Next, Table 2 shows the influence of the amount of the additive element in which the experiment B (Co 35 Fe 65 ) (76-x) -Ta 8 -B 8 -Mn 8 -M x (M = additive element) was made into a basic composition. This Table 2 shows the characteristics of the quenched ribbon which changed the addition amount of the additive element. Further, the composition of the additive-free system (Co 35 Fe 65 ) 76 -Ta 8 -B 8 -Mn 8 .
第2圖顯示表2之各種元素的添加量與溶出量之關係。TCR所屬的Ge、Ru及Pt係即使些許的添加量耐蝕性改善的效果亦高。另一方面，可知不屬於此的Ti、Hf及W雖隨著添加量而改善耐蝕性，但需要較多量的添加。進而，第3圖顯示表2之結果的Bs與溶出量之繪圖。如同第3圖般，添加有Ge、Ru及Pt的組成，與其他的添加元素相比較，可得到高Bs與低溶出量。 Fig. 2 is a graph showing the relationship between the amount of addition of various elements of Table 2 and the amount of elution. The Ge, Ru, and Pt systems to which the TCR belongs are also highly effective in improving the corrosion resistance even with a slight addition amount. On the other hand, it is understood that Ti, Hf, and W which do not belong to this have improved corrosion resistance with the addition amount, but a large amount of addition is required. Further, Fig. 3 shows a plot of Bs and elution amount as a result of Table 2. As in the third drawing, the composition of Ge, Ru, and Pt is added, and compared with other added elements, high Bs and low elution amount can be obtained.
依據以上的實驗A及B可知，於添加有TCR所屬之元素的情況，與添加有其他之元素的情況相比較，可將Bs的降低幅度抑制得較小，同時可得到高耐蝕性。接著，於各種的組成中，以添加有TCR所屬之元素的組成，與未添加的組成，製作濺鍍靶材，實施使用有此的濺鍍薄膜之評估(實驗C)。 According to the above experiments A and B, in the case where the element to which the TCR belongs is added, the reduction in the Bs can be suppressed to be small and the high corrosion resistance can be obtained as compared with the case where the other element is added. Next, in various compositions, a sputtering target was prepared by adding the composition of the element to which the TCR belongs, and the composition which was not added, and evaluation of the sputtering film using the above was carried out (Experiment C).
實驗C，為了評估各種元素的影響，藉由濺鍍膜評估Bs、耐蝕性及非晶質性。如表3所示般，顯示各種組成之濺鍍膜的各特性。No.1~8為本發明例，No.9~14為比較例。比較例No.9係由於TAM及TCR/2+TAM+TNM之值低，因此Bs過高，而非晶質性不佳，且耐蝕性亦差。比較例No.10係由於TAM、TCR/2+TAM+TNM之值高，因此Bs低。 In Experiment C, in order to evaluate the influence of various elements, Bs, corrosion resistance, and amorphousness were evaluated by a sputtering film. As shown in Table 3, each characteristic of the sputter film of various compositions was shown. No. 1 to 8 are examples of the invention, and Nos. 9 to 14 are comparative examples. In Comparative Example No. 9, since the values of TAM and TCR/2+TAM+TNM were low, Bs was too high, the amorphousness was poor, and the corrosion resistance was also poor. In Comparative Example No. 10, since the values of TAM and TCR/2+TAM+TNM were high, Bs was low.
比較例No.11係由於TCR/2+TAM+TNM之值低，因此Bs過高。比較例No.12及13係由於Fe含量高，因此Bs低。可知比較例No.14係由於不含有TCR，因此，耐蝕性不佳。可知相對於此，本發明例No.1~8滿足任一條件，Bs及耐蝕性優異。 In Comparative Example No. 11, since the value of TCR/2+TAM+TNM was low, Bs was too high. In Comparative Examples No. 12 and 13, since the Fe content was high, Bs was low. It can be seen that Comparative Example No. 14 does not contain TCR, and therefore has poor corrosion resistance. In contrast, in the present invention examples Nos. 1 to 8 satisfy any of the conditions, and Bs and corrosion resistance are excellent.
如上所陳述般，依據本發明，可提供低成本並且縮小Bs的降低，尤其能夠大幅提升耐蝕性之極為優異的垂直磁性記錄媒體軟磁性膜層用合金、及用以製作此合金的薄膜之濺鍍靶材。 As described above, according to the present invention, it is possible to provide a low-cost and reduced Bs reduction, and in particular, an alloy for a soft magnetic film layer of a perpendicular magnetic recording medium which is excellent in corrosion resistance and which is excellent in corrosion resistance, and a film for forming a film of the alloy Plating target.
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| CN105200298A (en) * | 2015-09-08 | 2015-12-30 | 杨雯雯 | Nanocrystalline soft magnetic alloy material and preparation method thereof |
| JP6442460B2 (en) * | 2016-10-27 | 2018-12-19 | 山陽特殊製鋼株式会社 | CoFe-based alloy and sputtering target material for soft magnetic film layer in perpendicular magnetic recording medium |
| TWI652356B (en) * | 2017-07-31 | 2019-03-01 | 台耀科技股份有限公司 | Soft magnetic alloy |
| CN107675079A (en) * | 2017-09-30 | 2018-02-09 | 邓宏运 | Colliery disintegrating machine hammer body multicomponent microalloying high toughness wear resistant steel formula and technique |
| JP2020135907A (en) * | 2019-02-18 | 2020-08-31 | 山陽特殊製鋼株式会社 | Spattering target for forming soft magnetic layer of perpendicular magnetic recording medium, and perpendicular magnetic recording medium, and soft magnetic layer thereof |
| CN111139404A (en) * | 2020-01-17 | 2020-05-12 | 陕西新精特钢研精密合金有限公司 | High-strength soft magnetic alloy and manufacturing method thereof |
| JP2021127490A (en) | 2020-02-13 | 2021-09-02 | 山陽特殊製鋼株式会社 | Sputtering target material and method for manufacturing the same |
| CN112080709A (en) * | 2020-09-27 | 2020-12-15 | 浙江大学台州研究院 | Amorphous alloy razor blade and method of making same |
| CN114134472A (en) * | 2020-12-24 | 2022-03-04 | 佛山市中研非晶科技股份有限公司 | Cobalt-based amorphous alloy thin film, preparation method thereof, electromagnetic shielding film and equipment applying cobalt-based amorphous alloy thin film |
| CN115125428B (en) * | 2022-08-09 | 2023-03-10 | 杭州电子科技大学 | Wide-temperature-zone trans-room-temperature Magnetitum material and preparation method and application thereof |
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| US4439253A (en) * | 1982-03-04 | 1984-03-27 | Allied Corporation | Cobalt rich manganese containing near-zero magnetostrictive metallic glasses having high saturation induction |
| JPS5990219A (en) * | 1982-11-12 | 1984-05-24 | Tdk Corp | Magnetic head |
| JPS59182938A (en) * | 1983-04-01 | 1984-10-17 | Sumitomo Special Metals Co Ltd | Amorphous alloy having high magnetic permeability |
| JPH01118244A (en) * | 1987-04-17 | 1989-05-10 | Mitsui Petrochem Ind Ltd | Magneto-optical recording film |
| CA1298704C (en) * | 1987-09-28 | 1992-04-14 | Kunihiko Mizumoto | Magnetooptical recording medium |
| JPH0877544A (en) * | 1994-06-30 | 1996-03-22 | Fuji Electric Co Ltd | Magnetic recording medium and its production |
| JP2001049425A (en) * | 1999-08-05 | 2001-02-20 | Sumitomo Metal Mining Co Ltd | Rare earth element-transition metal series sintered body for sputtering target and its production |
| JP2001312815A (en) * | 2000-04-27 | 2001-11-09 | Showa Denko Kk | Magnetic recording medium, method of manufacturing the same, sputtering target and magnetic recording and reproducing device |
| US20080090106A1 (en) * | 2006-10-13 | 2008-04-17 | David Braunstein | Soft underlayer for perpendicular media with mechanical stability and corrosion resistance |
| JP5031443B2 (en) * | 2007-05-29 | 2012-09-19 | 山陽特殊製鋼株式会社 | Alloy for soft magnetic film layer in perpendicular magnetic recording media |
| JP2010150591A (en) * | 2008-12-25 | 2010-07-08 | Hitachi Metals Ltd | Cobalt-iron based alloy for soft-magnetic film |
| JP5698023B2 (en) * | 2011-02-16 | 2015-04-08 | 山陽特殊製鋼株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
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