CN103219463A - 有机电子发光器件及其制造方法 - Google Patents
有机电子发光器件及其制造方法 Download PDFInfo
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- CN103219463A CN103219463A CN2013101197578A CN201310119757A CN103219463A CN 103219463 A CN103219463 A CN 103219463A CN 2013101197578 A CN2013101197578 A CN 2013101197578A CN 201310119757 A CN201310119757 A CN 201310119757A CN 103219463 A CN103219463 A CN 103219463A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
- H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (30)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310119757.8A CN103219463B (zh) | 2013-04-08 | 2013-04-08 | 有机电子发光器件及其制造方法 |
TW102114857A TWI509855B (zh) | 2013-04-08 | 2013-04-25 | 有機電子發光器件及其製造方法 |
US14/141,188 US9105592B2 (en) | 2013-04-08 | 2013-12-26 | Organic electronic light emitting device and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310119757.8A CN103219463B (zh) | 2013-04-08 | 2013-04-08 | 有机电子发光器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103219463A true CN103219463A (zh) | 2013-07-24 |
CN103219463B CN103219463B (zh) | 2015-09-02 |
Family
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CN201310119757.8A Active CN103219463B (zh) | 2013-04-08 | 2013-04-08 | 有机电子发光器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9105592B2 (zh) |
CN (1) | CN103219463B (zh) |
TW (1) | TWI509855B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105304719A (zh) * | 2014-07-18 | 2016-02-03 | 上海和辉光电有限公司 | 柔性薄膜晶体管及其制造方法 |
CN107112347A (zh) * | 2014-11-14 | 2017-08-29 | E.T.C.有限责任公司 | 含有改良像素架构的显示器 |
CN109524564A (zh) * | 2018-11-23 | 2019-03-26 | 合肥鑫晟光电科技有限公司 | 一种有机发光晶体管、温感装置及其温度测试方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10026911B2 (en) * | 2016-01-15 | 2018-07-17 | Corning Incorporated | Structure for transistor switching speed improvement utilizing polar elastomers |
CN108493229A (zh) * | 2018-05-31 | 2018-09-04 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079784A1 (en) * | 2009-10-06 | 2011-04-07 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having thin film transistor |
CN102655118A (zh) * | 2012-01-10 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种amoled器件及制作方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6229259B1 (en) * | 1998-12-22 | 2001-05-08 | Alton O. Christensen, Sr. | Woven polymer fiber video displays with improved efficiency and economy of manufacture |
US20120007064A1 (en) * | 1999-12-31 | 2012-01-12 | Lg Chem, Ltd. | Organic electroluminescent device and method for preparing the same |
JP5028723B2 (ja) * | 2001-08-16 | 2012-09-19 | 奇美電子股▲ふん▼有限公司 | 薄膜トランジスタ、該薄膜トランジスタの製造方法、該薄膜トランジスタを含むアレイ基板、表示装置および該表示装置の駆動方式 |
EP1367659B1 (en) * | 2002-05-21 | 2012-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
US6950454B2 (en) | 2003-03-24 | 2005-09-27 | Eastman Kodak Company | Electronic imaging system using organic laser array illuminating an area light valve |
US7655961B2 (en) * | 2003-10-02 | 2010-02-02 | Maxdem Incorporated | Organic diodes and materials |
JP4349307B2 (ja) * | 2005-03-16 | 2009-10-21 | セイコーエプソン株式会社 | 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器 |
JP5299807B2 (ja) * | 2007-08-31 | 2013-09-25 | 出光興産株式会社 | ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
KR101680768B1 (ko) * | 2010-12-10 | 2016-11-29 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자장치 |
CN102611558B (zh) | 2012-04-27 | 2014-12-17 | 西安电子科技大学 | 基于幻方的多人共管电子账户密钥分配和身份认证方法 |
-
2013
- 2013-04-08 CN CN201310119757.8A patent/CN103219463B/zh active Active
- 2013-04-25 TW TW102114857A patent/TWI509855B/zh active
- 2013-12-26 US US14/141,188 patent/US9105592B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079784A1 (en) * | 2009-10-06 | 2011-04-07 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having thin film transistor |
CN102655118A (zh) * | 2012-01-10 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种amoled器件及制作方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105304719A (zh) * | 2014-07-18 | 2016-02-03 | 上海和辉光电有限公司 | 柔性薄膜晶体管及其制造方法 |
CN105304719B (zh) * | 2014-07-18 | 2020-04-14 | 上海和辉光电有限公司 | 柔性薄膜晶体管及其制造方法 |
CN107112347A (zh) * | 2014-11-14 | 2017-08-29 | E.T.C.有限责任公司 | 含有改良像素架构的显示器 |
CN107112347B (zh) * | 2014-11-14 | 2020-01-17 | 飞利斯有限公司 | 含有改良像素架构的显示器 |
US10615233B2 (en) | 2014-11-14 | 2020-04-07 | Flexterra, Inc. | Display containing improved pixel architectures |
CN109524564A (zh) * | 2018-11-23 | 2019-03-26 | 合肥鑫晟光电科技有限公司 | 一种有机发光晶体管、温感装置及其温度测试方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140299852A1 (en) | 2014-10-09 |
TWI509855B (zh) | 2015-11-21 |
US9105592B2 (en) | 2015-08-11 |
CN103219463B (zh) | 2015-09-02 |
TW201440275A (zh) | 2014-10-16 |
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C06 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: Shanghai Hehui optoelectronic Co., Ltd |