CN103219371B - 一种带有双面扩散残留层的沟槽栅型igbt及其制造方法 - Google Patents
一种带有双面扩散残留层的沟槽栅型igbt及其制造方法 Download PDFInfo
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- CN103219371B CN103219371B CN201310096965.0A CN201310096965A CN103219371B CN 103219371 B CN103219371 B CN 103219371B CN 201310096965 A CN201310096965 A CN 201310096965A CN 103219371 B CN103219371 B CN 103219371B
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CN201310096965.0A CN103219371B (zh) | 2013-03-25 | 2013-03-25 | 一种带有双面扩散残留层的沟槽栅型igbt及其制造方法 |
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CN201310096965.0A CN103219371B (zh) | 2013-03-25 | 2013-03-25 | 一种带有双面扩散残留层的沟槽栅型igbt及其制造方法 |
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CN103219371A CN103219371A (zh) | 2013-07-24 |
CN103219371B true CN103219371B (zh) | 2016-04-13 |
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CN112951907A (zh) * | 2021-01-26 | 2021-06-11 | 陕西半导体先导技术中心有限公司 | 一种降低导通电阻的功率半导体器件结构及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0746040A1 (en) * | 1995-05-31 | 1996-12-04 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Improved IGBT device |
US6221721B1 (en) * | 1996-02-12 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an insulated trench gate semiconductor device |
CN101976683A (zh) * | 2010-09-25 | 2011-02-16 | 浙江大学 | 一种绝缘栅双极型晶体管及其制造方法 |
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2013
- 2013-03-25 CN CN201310096965.0A patent/CN103219371B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0746040A1 (en) * | 1995-05-31 | 1996-12-04 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Improved IGBT device |
US6221721B1 (en) * | 1996-02-12 | 2001-04-24 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an insulated trench gate semiconductor device |
CN101976683A (zh) * | 2010-09-25 | 2011-02-16 | 浙江大学 | 一种绝缘栅双极型晶体管及其制造方法 |
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Owner name: HUA YUE MICROELECTRONICS CO., LTD. Effective date: 20140221 |
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Effective date of registration: 20140221 Address after: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant after: Zhejiang University Applicant after: Huayue Microelectronics Co., Ltd. Address before: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant before: Zhejiang University |
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Inventor after: Zhang Bin Inventor after: Han Yan Inventor after: Yu Qing Inventor after: Zhang Shifeng Inventor after: Zhu Dazhong Inventor before: Zhang Bin Inventor before: Han Yan Inventor before: Zhang Shifeng Inventor before: Zhu Dazhong |
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Free format text: CORRECT: INVENTOR; FROM: ZHANG BIN HAN YAN ZHANG SHIFENG ZHU DAZHONG TO: ZHANG BIN HAN YAN YU QING ZHANG SHIFENG ZHU DAZHONG |
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