CN103187498B - 一种半导体结构及其形成方法 - Google Patents
一种半导体结构及其形成方法 Download PDFInfo
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- CN103187498B CN103187498B CN201110453891.2A CN201110453891A CN103187498B CN 103187498 B CN103187498 B CN 103187498B CN 201110453891 A CN201110453891 A CN 201110453891A CN 103187498 B CN103187498 B CN 103187498B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 48
- 150000004767 nitrides Chemical class 0.000 claims abstract description 165
- 239000002096 quantum dot Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229910052950 sphalerite Inorganic materials 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims description 34
- 230000007704 transition Effects 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 17
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 17
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 160
- 229910002601 GaN Inorganic materials 0.000 description 47
- 239000000463 material Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 15
- 230000010287 polarization Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 9
- 229910052984 zinc sulfide Inorganic materials 0.000 description 9
- 229910000238 buergerite Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- VYMDGNCVAMGZFE-UHFFFAOYSA-N phenylbutazonum Chemical compound O=C1C(CCCC)C(=O)N(C=2C=CC=CC=2)N1C1=CC=CC=C1 VYMDGNCVAMGZFE-UHFFFAOYSA-N 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
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CN201110453891.2A CN103187498B (zh) | 2011-12-29 | 2011-12-29 | 一种半导体结构及其形成方法 |
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CN201110453891.2A CN103187498B (zh) | 2011-12-29 | 2011-12-29 | 一种半导体结构及其形成方法 |
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CN103187498A CN103187498A (zh) | 2013-07-03 |
CN103187498B true CN103187498B (zh) | 2016-08-03 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2529594B (en) | 2013-06-05 | 2018-09-05 | Nitto Optical Co Ltd | Light emittng device including an active region containing nanodots in a zinc-blende type crystal |
CN111384214B (zh) * | 2018-12-28 | 2021-07-23 | Tcl科技集团股份有限公司 | 一种量子阱结构的制备方法和量子阱结构 |
CN109768132B (zh) * | 2019-01-07 | 2020-08-14 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其制备方法 |
FR3107051B1 (fr) * | 2020-02-12 | 2022-10-14 | Centre Nat Rech Scient | Procédé de fabrication de nanostructures de nitrure d’aluminium et de gallium (AlGaN) |
CN117712249B (zh) * | 2024-02-05 | 2024-05-28 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571177A (zh) * | 2003-07-24 | 2005-01-26 | 璨圆光电股份有限公司 | 发光二极管结构及其制造方法 |
CN102088050A (zh) * | 2009-12-08 | 2011-06-08 | Lg伊诺特有限公司 | 发光器件、发光器件封装和照明*** |
CN102142491A (zh) * | 2010-02-01 | 2011-08-03 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明*** |
CN102254800A (zh) * | 2011-06-21 | 2011-11-23 | 清华大学 | 一种GaN基量子点的外延生长方法 |
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JP2000077783A (ja) * | 1998-08-27 | 2000-03-14 | Nec Corp | インジウムを含む窒化物半導体結晶の成長方法 |
KR100631980B1 (ko) * | 2005-04-06 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 소자 |
CN100547819C (zh) * | 2006-08-15 | 2009-10-07 | 中国科学院物理研究所 | 低极化效应的氮化镓基发光二极管芯片用外延材料及制法 |
KR20090047034A (ko) * | 2007-11-07 | 2009-05-12 | 주식회사 실트론 | 질화물계 반도체 소자 |
CN101728472A (zh) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | 一种多层led芯片结构及其制备方法 |
CN102034912B (zh) * | 2009-12-29 | 2015-03-25 | 比亚迪股份有限公司 | 发光二极管外延片、其制作方法及芯片的制作方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571177A (zh) * | 2003-07-24 | 2005-01-26 | 璨圆光电股份有限公司 | 发光二极管结构及其制造方法 |
CN102088050A (zh) * | 2009-12-08 | 2011-06-08 | Lg伊诺特有限公司 | 发光器件、发光器件封装和照明*** |
CN102142491A (zh) * | 2010-02-01 | 2011-08-03 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明*** |
CN102254800A (zh) * | 2011-06-21 | 2011-11-23 | 清华大学 | 一种GaN基量子点的外延生长方法 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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Granted publication date: 20160803 |